KR101368601B1 - Optical imaging device with determination of imaging errors - Google Patents

Abstract

An optical imaging device for use in optical imaging devices, in particular microlithography, comprising: a mask device 104 for receiving a mask 104.1 comprising a projection pattern 104.3, an optical element group 105.2, A substrate device 106 for receiving the substrate 106.1 and a measurement device 113; The optical element group (105.2) comprises a plurality of optical elements (107, 108, 109, 110, 111, 112) and is configured to image a projection pattern (104.3) on the substrate (106.1); The measuring device 113 is configured to determine at least one imaging error that occurs when imaging the projection pattern 104.3 onto the substrate 106.1; The measuring device (113) comprises a detection unit (113.1); The detection unit 113. 1 is a measurement image of at least one measurement element 113. 2 arranged in an area of the mask device 104, and the optical elements 107, 108, 109, 110 of the optical element group 105.2. Detect a measurement image generated by at least a majority of the numbers 111, 112; And the measuring device (113) is configured to determine an imaging error using the measured image.

Microlithography, imaging, error, mask, projection, pattern

Description

OPTICAL IMAGING DEVICE WITH DETERMINATION OF IMAGING ERRORS}

Cross reference of related application

This patent application claims the benefit of US Provisional Application No. 60 / 753,718, filed December 23, 2005, under US 35 USC 119 (e) (1), the disclosures of which are incorporated herein in their entirety. It is incorporated by reference into the specification.

Field of invention

The present invention relates to an optical imaging device. The invention can be used in connection with microlithography used in microelectronic circuit fabrication. Thus, the present invention also relates to a mask used in this type of optical imaging device. Finally, the present invention relates to a method of determining an imaging error and to image processing using the method.

In the field of microlithography, in particular, in order to obtain a high quality image, in addition to using parts made with as high precision as possible, parts of the imaging apparatus, for example optical elements such as lenses or mirrors, must be positioned as precisely as possible. In order to advance the miniaturization of the microelectronic circuits produced, the demand for precise quality, which falls within the microscopic range of several nanometers or less, increases the resolution of most optical systems used to fabricate microelectronic circuits. This is due to the constant need to do so.

As the light used is shifted towards shorter wavelengths, the increased resolution typically involved requires not only higher precision in the positioning of the optical elements used, but also the need to minimize imaging errors throughout the optical system. Is also increasing.

In order to meet the strict specifications imposed on the positioning of individual components, short wavelengths in the ultraviolet (UV) range used in microlithography, for example extreme ultraviolet light having an operating wavelength near 193 nm, in particular with an operating wavelength of 13 nm Regarding the short wavelength, also called the extreme UV range (EUV), the position of the individual components such as the mask table, optical element and substrate table (e.g. wafer table) is also referred to as the so-called metrology frame. For example, it should be determined relative to the reference point, the reference structure, and these parts should be positioned relatively dynamically relative to each other.

This solution, on the one hand, typically cannot measure in real time the position of the projection pattern of the mask on the substrate (in most cases the wafer), and the position of the part and the image from the position data of each part relative to the reference point. The disadvantage is that the relative position of is derived indirectly. Each measurement error continues to accumulate so that the final total measurement error is relatively high. In addition, there are too many elements for which a precise position must be set, and all of these elements must be set and controlled at each position in the nanoradian (nrad) region and the translational precision in the picometer (pm) region. This also entails particularly stringent specifications for the thermal stability of the support structure and reference point for the optical element. Typically only a few dozen nanometers (nm / K) per Kelvin can be tolerated by thermal expansion.

On the other hand, many solutions are known in which the position of the image of the projection pattern of the mask on the substrate is measured in real time. Here the position of the image of the projection pattern of the mask on the substrate can be corrected with considerably fewer dynamic elements, possibly only one dynamic element. This not only simplifies the dynamic control of the remaining parts, but also significantly mitigates the specifications imposed on the thermal stability of the reference point and the supporting structure.

Real-time measurement of the position of the image of the projection pattern of the mask on the substrate is performed according to the so-called laser pointer principle. The method comprises directing a collimated laser beam along a path starting from a light source disposed in a mask region, and advancing near the image-generating light path through optical elements involved in image generation within a substrate region range. And capturing the laser beam with the detector at that location. However small the degree to which the optical elements deviate from its calibration position, deviating from that position causes the laser beam to be registered through the detector and deflected from the target position used for calibration. Methods of this type are disclosed, for example, in US Patent Publication No. 2003/0234993 A1 (Hazelton et al.).

By the fact that the laser beam is directed through the optical elements involved in the image generation, using such an apparatus, it is possible not only to measure the possible deviation from the calibration position of the image of the projection pattern of the mask on the substrate, but also the image Other errors (e.g., distortion, etc.) within can also be determined. In this specification, all of these position errors and other errors are collectively referred to as imaging errors.

The above-mentioned solution has the disadvantage that the positioning of the light source and the detector must comply with strict specifications that not only in terms of thermal stability, but also that each precision is in nanoradians (nrad), and that the translational precision must be within the picometer (pm) region. have. In most cases, the light source is supported by a sophisticated thermally stable support structure that is typically spaced from a reference point (eg, so-called metrology reference). In addition, expensive measurements are required to determine the location of these components relative to the reference point, and the results are then incorporated into the calibration calculations.

Accordingly, it is an object of the present invention that there is no or at least a minimum degree of the above-mentioned disadvantages, in particular that imaging errors can be corrected and, if applicable, in real time, in a simple manner, if possible, in the most direct manner. It is to provide an optical imaging device, a mask for an imaging device, an imaging error measuring method, and an imaging method that can be determined.

A further object of the present invention is to provide an optical imaging device, a mask for the imaging device, an imaging error measuring method, and, if applicable, an imaging error can be determined in the most direct manner, and if applicable, correctable with a small number of elements, and It is to provide an image forming method.

The present invention relates to such a direct crystal and, where applicable, to the at least one large first optical element or functionally first optical element in which the positioning of the mask is involved in the projection of the image of the projection pattern of the mask on the substrate. It is based on the observation that the correction of the imaging error can be carried out in a simple manner if it is made at a position near the substrate via the second optical element being connected. In order to achieve this in accordance with the invention, at least a major part of the large first optical element involved in the image formation of the projection pattern of the mask on the mask area or substrate, or second optically connected functionally to the first optical element A measurement image of a measurement element located in the projection pattern area by the projection of the measurement element through the element is generated, and the measurement image is evaluated to determine an imaging error.

The use of a measuring element allows for the mask or its projection pattern in a simple manner that requires little effort and a small cost, unlike conventional laser pointer methods, to ensure that the active light source is properly formed and in a stable position. The advantage is that it can be placed in a stable and properly defined position. According to the novel technical concept, it is possible, in a simple manner, in particular to install the passive measuring element directly on the mask or just near the projection pattern. However, additionally or alternatively, using such a measuring element makes it possible to use at least part of the projection pattern for the measured image.

The possibility of capturing such a measured image and, among other things, having a mask immediately near the substrate has many advantages. For example, any errors (positional errors, dynamic errors, thermal errors, etc.) originating from optical elements, mask devices, substrate devices or reference points are eliminated. The measured image captured in this way, in most cases, represents a good approximation to the actual image of the projection pattern on the substrate, so that appropriate correction can be made based on this. If necessary, the difference between the captured position of the measured image and the substrate position can be determined and considered in a simple manner through a reference measurement of the measured image captured position in relation to the substrate position. In addition to this, it is also possible to automatically correct in one step any expansion errors of the group of optical elements, as well as the scale error of the additional reference measuring system.

Correction of the imaging error thus determined may be simply made through at least one of the components involved in the projection. Thus, by using only one of the actively controllable components involved in the projection of the image, the correction can be made effectively. Preferably, the component is a component that can be controlled within a wide bandwidth. Here, the actively controllable component can also be constituted by the substrate device itself. However, one of the optical elements can act as an actively controllable component. In some cases, it is also possible to consider appropriate automatic adjustment of the calibration process to adapt the correction of imaging errors to changing boundary conditions.

Accordingly, the present invention provides, as one of the subject matter of the invention, an optical device comprising a mask device serving to receive a mask comprising a projection pattern, a group of optical elements, a substrate device serving to receive a substrate, and a measuring device. Imaging devices, in particular optical imaging devices used in microlithography. The optical element group includes a plurality of optical elements and is designed to project an image of a projection pattern onto a substrate. The measuring device is designed to determine at least one imaging error that occurs within the projection of the projection pattern onto the substrate. The measuring device further comprises a detecting device which serves to capture or detect a measuring image of at least a portion of the projection pattern and / or at least one measuring element located within the area of the mask device, the measuring image being optical in the group of optical elements. Created through at least a major part of the elements, the measuring device is designed to determine the imaging error by the use of a measuring image.

Another subject matter of the invention is a mask for an optical imaging device according to the invention, the mask comprising a projection pattern and a measuring element.

Another subject matter covered in the present invention is an imaging method, in particular an imaging method for microlithography, wherein a projection pattern is projected onto a substrate by optical elements of a group of optical elements, and the imaging method produces an image of the projection pattern on the substrate. Determining at least one imaging error that occurs in generating. Through at least a majority of the optical elements of the optical element group, at least one measuring element and / or at least a portion of the projection pattern disposed in the area of the projection pattern is projected, whereby a measurement image is generated and recorded. The imaging error is then determined through the use of the measurement image.

Finally, another subject covered by the present invention is a method for determining an imaging error that occurs in the projection of an image of a projection pattern onto a substrate by optical elements of a group of optical elements, in particular used in microlithography. It is a way. Through at least a majority of the optical elements of the optical element group, at least one measuring element and / or at least a portion of the projection pattern disposed in the area of the projection pattern is projected, whereby a measurement image is generated and captured. The imaging error is again determined through the use of the measurement image.

Further preferred embodiments of the invention are presented in the dependent claims of the claims and in the illustrative description of the following preferred embodiments with reference to the drawings.

1 shows a schematic illustration of a preferred embodiment of an optical imaging device according to the present invention with a preferred embodiment of a mask in the present invention.

2 shows a schematic of the mask of FIG. 1.

3 shows a flow chart of a preferred embodiment of the imaging method according to the invention using the imaging device of FIG. 1, wherein a preferred embodiment of the method according to the invention is used for the detection of imaging errors.

4 shows a flow chart of another preferred embodiment of the imaging method according to the invention, another preferred embodiment of the method according to the invention is used for the detection of imaging errors.

1 to 3, a preferred embodiment of an optical imaging apparatus for microlithography use will be described.

1 shows a schematic illustration of a preferred embodiment of an optical imaging device according to the invention in the form of a microlithographic apparatus 101 which operates with light of a first wavelength in the extreme ultraviolet (EUV) range. The microlithographic apparatus 101 comprises an optical device in the form of an optical projection system 102 with an illumination system 103, a mask 104, and an objective lens 105 with an optical axis 105.1. The illumination system 103 illuminates the reflective mask 104.1 of the mask device 104 with a projection light bundle (not shown) through a suitable light-conducting system (not shown). In the mask 104.1 disposed on the mask table 104.2 there is a projection pattern 104.3, which is projected by the projection light beam via the optical elements in the objective lens 105, for example the substrate device 106. Is projected onto a substrate 106.1, such as a wafer on.

The objective lens 105 includes an optical element group 105.2 constituted by a plurality of first optical elements 107, 108, 109, 110, 111, 112 supported in the housing 105.3 of the objective lens 105. Include. If the operating wavelength is in the EUV range (approximately 13 nm), the optical elements 107, 108, 109, 110, 11, 112 are reflective optical elements, ie reflectors or the like.

A detection unit in the form of an encoder 113. 1 attached to the housing 105.3 of the objective lens 105, various measuring elements 113. 2 arranged in the area of the mask device 104, and a housing 105.3 of the objective lens 105. There is also a measuring device 113 comprising a guide device 113.3 attached to. The encoder 1113. 1 shows all the optical elements 107, 108, 109, 110, 111, 112 and guide device 113.3, as shown by the ray path 113.4 of the measuring light beam in FIG. 1. The measurement image of the measuring element 113. 2 directed to the encoder 1113 is registered through the register. Detection occurs for a second wavelength of the measurement luminous flux that is different from the first wavelength of the projection luminous flux, which serves to project the projection pattern 104.3 onto the wafer, the second wavelength being optimized for maximum sensitivity of the encoder 1131. do. However, it should be understood that in another embodiment of the present invention, the detection of the measured image may be performed at the wavelength used to project the projection pattern onto the wafer. In particular, in this case the measurement luminous flux can be spectroscopy from the projection luminous flux by suitable means.

In this embodiment, the guide device 113.3 is a direction-changing reflector attached to the housing 105.3 of the objective lens 105 near the wafer 106.1. Such a configuration enables, within the housing 105.3 of the objective lens 105, the encoder 113. 1 to be placed in a desired position with respect to the installation freedom, accessibility and / or design freedom of the other components. However, it is to be understood that other alternative embodiments of the present invention may also have a guide device configured differently. In particular, the substrate may serve at least as part of the guiding device, as shown by the dotted light path 113.5 in FIG. 1, when the required reflectivity is imparted. In this case, it may be possible to omit the guiding device which also generates obscuration for the projection of the projection pattern on the wafer.

The measuring device 113 also comprises a positioning device in the form of a reference-measuring device 113.6 disposed adjacent to the encoder 113. 1 on the housing 105.3 of the objective lens 105. This reference-measuring device 113.6 generally serves to determine the relative position of the wafer 106.1 with respect to the encoder 113.

In other words, the housing 105.3 of the objective lens 105 represents a reference element in relation to whether the above-described measurements are made. However, it should be understood that in other alternative embodiments of the invention, other components of the imaging device may act as reference elements. For example, a support structure 114 for the housing 105.3 of the objective lens 105, commonly referred to as a metrology frame, can serve as a reference element. Similarly, one of the optical elements 107, 108, 109, 110, 111, 112 may constitute the reference element. Especially for this purpose, heavy reflectors or similar elements disposed in the vicinity of the substrate are suitable. Finally, the substrate device itself, for example a substrate table, may constitute a reference element, for example by placing an encoder on the substrate table.

In another variant embodiment of the invention, it is noted that the measurement image of the measuring element may pass through only most of the optical elements of the group of elements, thus bypassing some of the optical elements at the end of the optical path, for example. It should also be understood. This configuration is particularly possible when the bypassed optical element is sufficiently stable with respect to position and thermal properties and / or the optical element itself constitutes a reference element.

From the measurement image and from the position of the wafer 106.1 with respect to the encoder 113.1 measured with the reference measuring device 113.6, in real time to determine one or more imaging errors within the projection of the projection pattern 104.3 onto the wafer 106.1. It is possible. Thus, based on the observed deviation from the target condition of the measured image in the encoder 113. 1, a conclusion can be drawn regarding the image deviation of the projection pattern 104.3 on the wafer 106.1 from the target position and / or the target shape.

Therefore, based on the positional deviation identified through the measured image, it is possible to draw a conclusion regarding the position of the components involved in the projection of the projection pattern 104.3 onto the wafer 106.1, and the shape identified through the measured image. The deviation makes it possible to draw a conclusion regarding another imaging error in the projection of the projection pattern 104.3 onto the wafer 106.1.

As shown in FIG. 2, in this embodiment the measuring element 113. 2 is arranged next to the projection pattern 104.3 on the mask 104.1 and extends along the scanning direction 104.4 of the mask device 104. Two measurement patterns in the form of a two-dimensional grid. The two-dimensional grid 113.2 may be formed in the mask 104.1 through, for example, a suitable and simple photographic exposure process. This can be done in the same process and / or at the same time as the process in which the projection pattern 104.3 is generated.

With such a two-dimensional grid 113.2 it is possible to record the above-described positional deviations very simply because, according to the known grid shape, the encoder 113.1 (after appropriate correction if possible) to establish the positional deviations. This is because only the pulse generated from the displacement of the measured image of the grid 113.2 needs to be recorded and calculated.

In addition, the encoder 113. 1 may record a deviation in the form of a measured image of the grid 113. 2, for example, a distortion of the grid 113. 2, and from this deviation, the projection pattern 104.3 is transferred to the wafer 106.1. In projecting, results may be obtained regarding additional imaging errors.

In this regard, it is also understood that in a modified form of the invention it is possible to use at least two one-dimensional grids in different directions instead of two-dimensional grids. Not only this, but also in the modified form of the present invention, any other measurement element instead of the grid 113.2 and / or any image formation error based on position deviation and / or measurement image instead of the encoder 113.1 can be detected. It is also possible to use other detection units.

It will also be appreciated that in other variations of the invention, one or more measurement elements need not be arranged directly on the mask. Rather, for example, if a limited spatial relationship to the mask or projection pattern is ensured, it is also possible to arrange one or more measurement elements separately from the mask device in the vicinity of the mask or projection pattern.

The use of manual measurement elements 113.2 arranged directly in the mask 104.1 has the advantage that the measurement elements have a defined and stable position with respect to the mask 104.1 and the projection pattern 104.3 of the mask without special means. Unlike the laser pointer method known in the art, in which the active light source must be suitably defined and maintained in a stable position, the means required for this purpose under the inventive concept are only of minor scope.

The concept of capturing the measurement image and thus first of all placing the mask 104.1 directly at a position very close to the wafer 106.1 has several advantages. For example, any measurement error (position) that occurs from the optical elements 107, 108, 109, 110, 111, 112, from the mask device 104, from the substrate device 106, and from the support structure 114. Errors, dynamic errors, thermal errors, etc.) are eliminated. In most cases the measured image recorded in this way represents a very close picture of the actual image of the projection pattern 104.3 of the wafer 106.1, so that appropriate correction can be made based on this, as described in detail below. have. The deviation of the measurement image which detects the position of the substrate, i.e., the position of the wafer 106.1, i.e., the position of the encoder 113.1, is determined and considered through the reference measurement performed by the reference measuring device 113.5. In addition, it is also possible by such a device to automatically correct all the enlargement errors of the group of optical elements as well as all the scale errors of the additional reference measurement system automatically by a single process.

The correction of the imaging error determined by the encoder 113. 1 is performed by a calibration device in the form of a control device 115 connected to the measurement device 113. The control device 115 as the central control device has an active configuration that contributes to projecting the projection pattern 104.3 onto the wafer 106.1 as shown in FIG. 1 by the control line 115.1 only partially symbolically indicated. It is connected to an active component. Of course, the connection to the active component does not necessarily have to be a hard-wired connection. Rather, such communication may also be a wireless connection that exists, at least in part, only tentatively.

The control device 115 processes the imaging error determined by the encoder 1131 based on the imaging error and the actuator element of one of the active components which contributes to projecting the projection pattern 104.3 onto the wafer 106.1. Compute a command for an actuator element. This active component is the last optical element 112 in the light path that projects the projection pattern 104.3 onto the wafer 106.1 in this example.

However, in other variations of the invention, one or more other components that contribute to projecting the projection pattern 104.3 onto the wafer 106.1 may be configured as active components and may be used to correct the determined imaging error. It is obvious. Preferably such components are controllable within large bandwidths. It is also possible for a controllable component to be comprised by the board | substrate apparatus itself.

It is natural that control commands for the actuator element of the active component that contribute to projecting the projection pattern 104.3 onto the wafer 106.1 may also be determined in other ways. For example, these instructions may be obtained directly from the relevant index table and / or other models stored in memory.

3 consists of a microlithography method performed with the microlithography device 101 of FIGS. 1 and 2 operating according to the so-called scanner principle, and the preferred practice of the method for determining the imaging error A flowchart diagram of a preferred embodiment of the imaging method according to the invention in which an example is used is shown.

First, the process sequence of the microlithography method starts at step 116.1. Next, the microlithography apparatus 101 of FIG. 1 is made available for the process of step 116.2.

In the imaging step 116.3, the determination of the imaging error is performed in step 116.4 simultaneously with the exposure of the wafer 106.1. As described above with reference to FIGS. 1 and 2, the measured image of the two-dimensional grid 113. 2 is measured by the encoder 113. 1, the reference measurement is performed by the reference measuring device 113.6, and the result is shown in the example. For example, it is processed by the processing unit of the measuring apparatus 113 integrated with the encoder 113.

According to the imaging error in projecting the projection pattern 104.3 determined in the previous step 116.4 to the wafer 106.1, the correction of the imaging error as described above with respect to FIGS. 1 and 2 is performed by the optical element 112. Is carried out in step 116.5 by the control device 115 by sending a suitable command to the operating elements of.

As described above, determination and correction of the imaging error are performed simultaneously with the exposure of the wafer 106.1. Unless at least an imaging error is found necessary to stop the exposure of the wafer 106.1, eventually the exposure is performed simultaneously with and independently of the determination and correction of the imaging error.

Additional step 116.6 consists of a test as to whether additional calibration cycles need to be performed. If this is not the case, the process sequence ends at step 116.7. If not, the process cycles back to step 116.4.

FIG. 4 consists of a microlithography process performed with the microlithography device of FIGS. 1 and 2 operating in accordance with the so-called stepper principle in this case, and the preferred method of the method for determining the imaging error. A flowchart diagram of another preferred embodiment of the imaging method according to the invention in which the embodiment is used is shown.

First, the process sequence of the microlithography method begins at step 216.1. Next, the microlithography apparatus 101 of FIG. 1 is made available for the process of step 216.2.

In the imaging step 216.3, determination of the imaging error is made in step 216.4. As described above with reference to FIGS. 1 and 2, the measured image of the two-dimensional grid 113. 2 is measured by the encoder 113. 1, the reference measurement is performed by the reference measuring device 113.6, and the result is shown in the example. For example, it is processed by the processing unit of the measuring apparatus 113 integrated with the encoder 113.

Depending on the imaging error in projecting the projection pattern 104.3 determined in the previous step 216.4 onto the wafer 106.1, the correction of the imaging error as described above with respect to FIGS. 1 and 2 is performed by the optical element 112. Is carried out in step 216.5 by the control device 115 by sending a suitable command to the operating elements of.

In a further step 216.6 the wafer 106.1 is exposed. The following step 216.7 consists of a test as to whether additional exposure cycles need to be performed. If not the case, the process sequence ends at step 216.8. If not, the process cycles back to step 216.3.

In another variant of the invention, the measurement image is not produced (or limited to only the optical elements) by the first optical elements 107, 108, 109, 110, 111, 112, and at least It is produced in part through a group of second optical elements, wherein one or more of the second optical elements are operatively connected to the first optical elements 107, 108, 109, 110, 111, 112. For this purpose this second optical element can for example be rigidly connected to each of the first optical elements 107, 108, 109, 110, 111, 112, so that the calibration is, respectively, the first optical element 107, 108. , 109, 110, 111, 112 can be known or sufficiently well determined or estimated between state changes (eg, position changes) of the second optical element connected thereto.

The second optical elements may be constituted by refractive, reflective or diffractive optical elements used alone or in any combination and, if possible, according to the wavelength of the measuring light flux.

It is believed that the concept of the measured image is not limited to the projection of separate measuring elements. Rather, it is conceivable that the measured image is composed, in whole or in part, of an image generated by the measuring luminous flux of at least a portion of the projection pattern 104.3. Also, since the projection pattern 104.3 usually has a sufficiently known and measurable structure, an imaging error can be determined sufficiently accurately from the image projected by the measuring light beam.

The invention has been described above by way of example in which the optical element group consists solely of reflective optical elements. In this respect, however, the invention also finds application for a group of optical elements comprising singly or a combination of refractive, reflective or diffractive optical elements, especially when projecting at different first wavelengths. Should be noted.

It should also be noted that the present invention has been described above by way of examples selected in the microlithography art. However, it is obvious that the present invention can likewise be used for any other application or image processing process.

Claims (48)

As an optical imaging device, A mask device 104 which serves to hold the mask 104.1 including the projection pattern 104.3, Optical element group 105.2, A substrate device 106 serving to hold the substrate 106.1, and Including a measuring device 113, The optical element group 105.2 includes a plurality of optical elements 107, 108, 109, 110, 111, 112, and is configured to project a projection pattern 104.3 image onto the substrate 106.1, In the optical imaging device, the measuring device 113 is configured to determine at least one imaging error generated when projecting the projection pattern 104.3 onto the substrate 106.1. The measuring device 113 includes a detection unit 113. The detection unit 113. 1 records one or both of the measurement image of at least a portion of the projection pattern 104.3 and the measurement image of at least one measurement element 113. 2 arranged in the area of the mask device 104 ( and the measured image is generated through at least a majority of the optical elements 107, 108, 109, 110, 111, 112 of the optical element group 105.2, An optical guide device is provided, which is not part of the optical element group 105.2, guides the measurement light for generating the measurement image to the detection unit 1131, The optical guide device is located in the path of the measurement light prior to the substrate 106.1, the surface of the substrate forms at least part of the optical guide device, And the measuring device (113) is configured to determine an imaging error using the measured image. The method of claim 1, And the measuring device (113) is configured to determine the deviation of the position of the image of the projection pattern (104.3) on the substrate (106.1) from the target position. The method according to claim 1 or 2, And the measurement image is generated by all of the optical elements (107, 108, 109, 110, 111, 112). The method according to claim 1 or 2, And the detection unit is configured to record a measurement image of the measurement element (113.2) arranged in the mask device (104). The method according to claim 1 or 2, And the detection unit is configured to record a measurement image of the measuring element (113.2) arranged near the projection pattern (113.2). The method according to claim 1 or 2, The mask device 104 includes a mask 104.1 having a projection pattern 104.3, And the measuring element (113.2) is arranged in the mask (104.1). The method according to claim 6, And the measuring element (113.2) is arranged directly adjacent to the projection pattern (104.3). The method according to claim 1 or 2, And the measuring element (113.2) comprises at least one measuring pattern. 9. The method of claim 8, And the measurement pattern is a two-dimensional grid or two two-dimensional grids. The method according to claim 1 or 2, The detection unit 113. 1 is arranged in an area of the substrate device 106, or And an optical guide device configured to guide the measured image to the detection unit (113.1) in an area of the substrate device (106). The method according to claim 1 or 2, The detection unit 113. 1 is arranged in the reference element 105.3, And an positioning device (113.6) for determining the position of the substrate (106.1) with respect to the detection unit (113.1). 12. The method of claim 11, And the reference element is a support structure (105.3) for the group of optical elements (105.2) or an optical element of the group of optical elements. The method of claim 10, The substrate device 106 includes a substrate 106.1, And the guide device is formed by a surface of the substrate. The method according to claim 1 or 2, Light of a first wavelength is provided such that the image of the projection pattern 104.3 is projected onto the substrate 106.1, Light of a second wavelength is provided so that the measurement image is generated, And said first wavelength is different from said second wavelength. The method of claim 14, And the second wavelength is adapted to the detection unit (113.1) in order to be able to utilize the optimum sensitivity of the detection unit (113.1). The method of claim 14, And the first wavelength is in the EUV range, preferably in the range of 13 nm. The method according to claim 1 or 2, A calibration unit 115 connected to the detection unit 113. At least one of the components 104, 106, 107, 108, 109, 110, 111, 112 of the imaging device 101 involved in projecting an image of the projection pattern onto the substrate is actively controllable. controllable component) 112, The active controllable component 112 is connectable to the calibration device 115, The calibration device 115 is configured to have an ability to control the active controllable component 112 according to the imaging error so as to be able to perform at least partial calibration of the imaging error. . 18. The method of claim 17, Wherein said at least one active controllable component is a component of a mask device (104), an optical element (112) of an optical element group (105.2), or a component of a substrate device (104). The method according to claim 1 or 2, The optical imaging device, characterized in that the mask comprises a projection pattern (104.3) and a measuring element (113.2). 20. The method of claim 19, And the measuring element (113.2) is arranged directly adjacent to the projection pattern (104.3). 20. The method of claim 19, And the measuring element (113.2) comprises at least one measuring pattern. 22. The method of claim 21, And the measurement pattern is a two-dimensional grid pattern (113.2). Projecting the image of the projection pattern 104.3 onto the substrate 106.1 by the optical elements 107, 108, 109, 110, 111, 112 of the optical element group 105.2, An imaging method comprising the steps of determining whether an imaging error occurs when projecting an image of the projection pattern 104.3 onto a substrate, Any one or both of the measurement image of at least part of the projection pattern 104.3 and the measurement image of at least one measurement element 113. 2 arranged in the area of the projection pattern 104.3 is detected, and the measurement image is Generated by at least most of the optical elements 107, 108, 109, 110, 111, 112 of the optical element group 105.2, The measurement light for forming the measurement image is guided to the detection unit 113. 1 using an optical guide device that is not part of the optical element group 105.2, The optical guide device is located in the path of the measurement light prior to the substrate 106.1, the surface of the substrate forms at least part of the optical guide device, The determination of the imaging error is performed using the measurement image. 24. The method of claim 23, An imaging method, characterized in that the deviation of the position of the image of the projection pattern (104.3) on the substrate (106.1) deviates from the target position as an imaging error. 25. The method according to claim 23 or 24, And the measurement image is generated by all of the optical elements (107, 108, 109, 110, 111, 112) of the optical element group (105.2). 25. The method according to claim 23 or 24, And the measuring element (113.2) is arranged in a mask device (104) comprising the projection pattern (113.2). 25. The method according to claim 23 or 24, And the measuring element (113.2) is arranged in close proximity to the projection pattern. 25. The method according to claim 23 or 24, And the measuring element (113.2) is arranged in a mask (104.1) comprising the projection pattern (113.2). 29. The method of claim 28, And the measuring element (113.2) is arranged directly adjacent to the projection pattern (104.3). 25. The method according to claim 23 or 24, And the measuring element (113.2) comprises at least one projection pattern. 31. The method of claim 30, And the measurement pattern is a two-dimensional grid (113.2) or comprises two one-dimensional grids. 25. The method according to claim 23 or 24, The measurement image, Captured in the area of the substrate 106.1, or An imaging method, characterized in that it is captured using a guide device (113.2) arranged in the region of the substrate (106.1). 25. The method according to claim 23 or 24, The measured image is captured through a detection unit 113. 1 arranged on the reference element 105.3, An imaging method, characterized in that the position of the substrate (106.1) with respect to the detection unit (113.1) is determined. 34. The method of claim 33, And the reference element is a support structure (105.3) for the optical element group (105.2) or an optical element of the optical element group (105.2). 33. The method of claim 32, And the guide device is formed by the surface of the substrate (106.1). 25. The method according to claim 23 or 24, The image of the projection pattern 104.3 is projected onto the substrate 106.1 by light of a first wavelength, The measured image is generated by light of a second wavelength, And the first wavelength is different from the second wavelength. 37. The method of claim 36, And the second wavelength is set to have an optimal sensitivity for recording the measured image. 25. The method according to claim 23 or 24, At least one of the aforementioned components 104, 106, 107, 108, 109, 110, 111, 112 involved in projecting an image of the projection pattern onto the substrate is an active controllable component 112, And the active controllable component (112) is controlled according to the imaging error in order to at least partially correct the imaging error. 39. The method of claim 38, The at least one active controllable component 112 comprises a component of a mask device 104 comprising a projection pattern 104.3, an optical element 112 of an optical element group 105.2, or a substrate 106.1. An imaging method, comprising: a component part of a substrate device (106). To determine an imaging error in an image of the projection pattern 104.3 projected onto the substrate 106.1 by the optical elements 107, 108, 109, 110, 111, 112 of the optical element group 105.2. In the imaging error determination method, Any or both of the measurement image of at least part of the projection pattern 104.3 and the measurement image of at least one measurement element 113. 2 arranged in the region of the projection pattern 104.3 is recorded, the measurement image being an optical element Generated through at least most of the optical elements 107, 108, 109, 110, 111, 112 of the group 105.2, The measurement light for forming the measurement image is guided to the detection unit 113. 1 using an optical guide device that is not part of the optical element group 105.2, The optical guide device is located in the path of the measurement light before the substrate 106.1, the surface of the substrate forms at least a part of the optical guide device, An imaging error determination method, characterized in that the imaging error is determined using the measured image. As an optical imaging device, A mask 104.1 comprising a projection pattern 104.3, Optical element group 105.2, The substrate 106.1, Including a measuring device 113, The optical element group 105.2 includes a plurality of optical elements 107, 108, 109, 110, 111, 112 and projects the projection pattern 104.3 image onto the substrate 106.1 by means of a projection light beam. , In the optical imaging device, the measuring device 113 determines at least one imaging error generated when the projection pattern 104.3 is projected onto the substrate 106.1. The measuring device 113 includes a detection unit 113. 1 which registers a measurement image generated by the measurement light beam, The measurement image is any one or both of the measurement image of at least part of the projection pattern 104.3 and the measurement image of at least one measurement element 113. 2 arranged in the region of the mask device 104, and the first optical element. At least one generated through at least a majority of 107, 108, 109, 110, 111, 112, or having a functional connection to one of the optical elements 107, 108, 109, 110, 111, 112 Generated through the second optical element, An optical guide device is provided, which is not one of the first optical elements 107, 108, 109, 110, 111, 112 and the at least one second optical element and generates the measured image. To guide the measurement light to the detection unit (113.1), The optical guide device is located in the path of the measurement light prior to the substrate 106.1, the surface of the substrate forms at least part of the optical guide device, The measuring device (113) is an optical imaging device, characterized in that for determining the imaging error using the measurement image. As an optical imaging device, A mask 104.1 comprising a projection pattern 104.3, Optical element group 105.2, The substrate 106.1, Including a measuring device 113, The optical element group 105.2 includes a plurality of first optical elements 107, 108, 109, 110, 111, 112, and projects the projection pattern 104.3 image onto the substrate 106.1 by a projection light beam. To do it, In the optical imaging device, the measuring device 113 determines at least one imaging error generated when the projection pattern 104.3 is projected onto the substrate 106.1. The measuring device 113 comprises a plurality of second optical elements each functionally connected to one of the first optical elements 107, 108, 109, 110, 111, 112, The measuring device 113 includes a detection unit 113. 1 which registers a measurement image generated through the measurement light beam, The measured image is generated through the second optical elements and is one of the measured image of at least a portion of the projection pattern 104.3 and the measured image of at least one measured element 113. 2 arranged in the region of the mask device 104. Or both, An optical guide device is provided, which is not part of the optical element group 105.2, guides the measurement luminous flux for generating the measurement image to the detection unit 1131. The optical guide device is located in the path of the measurement light beam prior to the substrate 106.1, the surface of the substrate forms at least part of the optical guide device, The measuring device (113) is an optical imaging device, characterized in that for determining the imaging error using the measurement image. 43. The method of claim 41 or 42, A calibration unit 115 connected to the detection unit 113. At least one of the components 104, 106, 107, 108, 109, 110, 111, 112 of the imaging device 101 involved in projecting an image of the projection pattern onto the substrate is an active controllable component 112. )ego, The active controllable component 112 is connectable to the calibration device 115, And the active controllable component (112) can be controlled according to the imaging error by the calibration device (115) in order to be able to perform at least partial correction of the imaging error. Project the image of the projection pattern 104.3 onto the substrate 106.1 by means of the first optical elements 107, 108, 109, 110, 111, 112 of the optical element group 105.2 and the projection light beam, An imaging method, comprising determining whether at least one imaging error occurs when projecting an image of the projection pattern 104.3 onto a substrate, wherein: The measurement image generated by the measurement luminous flux is any one or both of the measurement image of at least part of the projection pattern 104.3 and the measurement image of at least one measurement element 113. 2 arranged in the region of the projection pattern 104.3. Recorded as all; The measured image is generated through at least a majority of the first optical elements 107, 108, 109, 110, 111, 112, or the first optical elements 107, 108, 109, 110, 111, 112. Generated through at least one second optical element having a functional connection to one of the The measuring luminous flux is guided to the detection unit 113. 1 using an optical guide device which is not one of the first optical elements 107, 108, 109, 110, 111, 112 and the at least one second optical element. , The optical guide device is located in the path of the measurement light beam prior to the substrate 106.1, the surface of the substrate forms at least part of the optical guide device, The determination of the imaging error is performed using the measurement image. Project the image of the projection pattern 104.3 onto the substrate 106.1 by means of the first optical elements 107, 108, 109, 110, 111, 112 of the optical element group 105.2 and the projection light beam, An imaging method, comprising determining whether at least one imaging error occurs when projecting an image of the projection pattern 104.3 onto a substrate, wherein: The measurement image is generated from any one or both of the measurement image of at least part of the projection pattern 104.3 and the measurement image of at least one measurement element 113. 2 arranged in the region of the projection pattern 104.3, and the optical Generated by a plurality of second optical elements and measurement light beams, each of which is functionally connected to one of the optical elements 107, 108, 109, 110, 111, 112 of the element group 105.2, The measuring light flux is guided to the detection unit 113. 1 using an optical guiding device that is not one of the optical elements, The optical guide device is located in the path of the measurement light beam prior to the substrate 106.1, the surface of the substrate forms at least part of the optical guide device, Record the measurement image, The determination of the imaging error is performed using the measurement image. 46. The method of claim 44 or 45, At least one of the aforementioned components 104, 106, 107, 108, 109, 110, 111, 112 involved in projecting an image of the projection pattern onto the substrate is an active controllable component 112, And the active controllable component (112) is controlled according to the imaging error in order to at least partially correct the imaging error. An imaging error that occurs when the image of the projection pattern 104.3 is projected onto the substrate 106.1 by the first optical elements 107, 108, 109, 110, 111, 112 of the optical element group 105.2 and the projection luminous flux ( In the imaging error determination method for determining the imaging error), The measurement image is recorded as either or both of the measurement image of at least a portion of the projection pattern 104.3 and the measurement image of at least one measurement element 113. 2 arranged in the region of the projection pattern 104.3, and at the measurement luminous flux. And the measured image is generated through at least a majority of the first optical elements 107, 108, 109, 110, 111, 112, or the first optical elements 107, 108, 109, 110, Generated through at least one second optical element having a functional connection to one of 111, 112, The measuring luminous flux is guided to the detection unit 113. 1 using an optical guide device which is not one of the first optical elements 107, 108, 109, 110, 111, 112 and the at least one second optical element. , The optical guide device is located in the path of the measurement light beam prior to the substrate 106.1, the surface of the substrate forms at least part of the optical guide device, An imaging error determination method, characterized in that the imaging error is determined using the measured image. An imaging error that occurs when the image of the projection pattern 104.3 is projected onto the substrate 106.1 by the first optical elements 107, 108, 109, 110, 111, 112 of the optical element group 105.2 and the projection luminous flux ( In the imaging error determination method for determining the imaging error), The measurement image is generated from any one or both of the measurement image of at least part of the projection pattern 104.3 and the measurement image of at least one measurement element 113. 2 arranged in the region of the projection pattern 104.3, Generated by a plurality of second optical elements and a measurement light beam, each of which is functionally connected to one of the first optical elements 107, 108, 109, 110, 111, 112, The measuring light flux is guided using an optical guiding device that is not one of the optical elements, The optical guide device is located in the path of the measurement light beam prior to the substrate 106.1, the surface of the substrate forms at least part of the optical guide device, Record the measurement image, The determination of the imaging error is performed using the measurement image.

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