KR101315756B1 - Semiconductor Light Emitting Diode and Method for Manufacturing thereof - Google Patents

Semiconductor Light Emitting Diode and Method for Manufacturing thereof Download PDF

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KR101315756B1
KR101315756B1 KR1020120015197A KR20120015197A KR101315756B1 KR 101315756 B1 KR101315756 B1 KR 101315756B1 KR 1020120015197 A KR1020120015197 A KR 1020120015197A KR 20120015197 A KR20120015197 A KR 20120015197A KR 101315756 B1 KR101315756 B1 KR 101315756B1
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pillar
type
type cladding
semiconductor material
surrounding
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KR20130093938A (en
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권세훈
민재식
조병구
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주식회사 칩테크놀러지
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    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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    • H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/385—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body

Abstract

본 발명은 금속 전극, 상기 금속 전극 상에 n형 반도체 물질로 형성된 기둥지지부와, 상기 기둥지지부 상에 n형 반도체 물질로 다수의 기둥 모양으로 형성된 기둥부를 포함하는 n형 클래딩, 상기 기둥부를 둘러싸며 컨포멀하게 형성되고, 상기 기둥부 사이의 기둥지지부 상에 컨포멀하게 형성되며, 양자우물층과 장벽층이 교대로 적층된 활성부, 상기 활성부를 둘러싸며 p형 반도체 물질로 컨포멀하게 형성된 p형 클래딩 및 상기 p형 클래딩을 둘러싸며 투명 도전 물질로 컨포멀하게 형성된 투명 전극을 포함하는 반도체 발광 다이오드를 제공한다.The present invention includes an n-type cladding comprising a metal electrode, a pillar support formed of an n-type semiconductor material on the metal electrode, and a pillar portion formed of a plurality of pillars of n-type semiconductor material on the pillar support, and surrounding the pillar. Conformally formed, conformally formed on the column support between the pillar portion, the active portion of the quantum well layer and the barrier layer alternately laminated, p conformally formed with a p-type semiconductor material surrounding the active portion A semiconductor light emitting diode including a cladding and a transparent electrode conformally formed of a transparent conductive material surrounding the p-type cladding are provided.

Description

반도체 발광 다이오드 및 그의 제조 방법{Semiconductor Light Emitting Diode and Method for Manufacturing thereof}Semiconductor light emitting diode and method for manufacturing thereof

본 발명은 가시광선이나 자외선 파장의 빛을 발광하는 반도체 발광 다이오드 및 그의 제조 방법에 관한 것으로서, 보다 상세하게는 기둥부와 기둥지지부를 포함하는 클래딩을 형성하고, 기둥부와 기둥지지부를 따라서 활성층을 컨포멀(conformal)하며, 활성층을 따라서 투명 전극이나 금속 전극을 컨포멀하게 형성함으로써 유효 발광 면적을 효과적으로 증가시킬 수 있는 반도체 발광 다이오드 및 그의 제조 방법에 관한 것이다.
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting diode that emits light of visible or ultraviolet wavelengths, and to a method of manufacturing the same. More specifically, a cladding including a pillar and a pillar support is formed, and an active layer is formed along the pillar and the pillar. The present invention relates to a semiconductor light emitting diode that is conformal and can effectively increase an effective light emitting area by conformally forming a transparent electrode or a metal electrode along an active layer, and a method of manufacturing the same.

최근 GaN에 Al 또는 In을 첨가한 반도체 발광 다이오드(LED : light emitting diode)는 에너지 절약을 극대화시킬 수 있는 차세대 발광소자로 각광받고 있으며, 그 영역이 가시광선 및 자외선 스펙트럼까지 응용이 확대되고 있다.Recently, light emitting diodes (LEDs) in which Al or In are added to GaN have been spotlighted as next-generation light emitting devices capable of maximizing energy saving, and their applications are expanding to the visible and ultraviolet spectrums.

상술한 반도체 발광 다이오드의 발광 효율을 향상시키기 위하여 빛을 방출하는 활성층을 다중 양자 우물(multi quantum well) 구조로 형성시키는 방법이 한국특허 공개 제 10-2010-0006547호에 제안되었다. 그런데 상술한 문헌에 기재된 반도체 발광 다이오드는 발광 면적 손실을 감소시키기 위한 것으로서, 유효 발광 면적을 충분히 확보하기가 어려웠고, 후속 연구에서 유효 발광 면적을 효과적으로 증가시킬 수 있는 다양한 반도체 발광 다이오드 구조가 제안되었으나, 활성층에 크랙(crack)이 발생하거나, 장시간 사용시 반도체 발광 다이오드의 열발생으로 인하여 에어 갭(air gap)내의 산소와 반응을 통해 산화됨으로써, 발광효율이 감소될 수 있는 문제점이 있었다.
In order to improve the light emitting efficiency of the semiconductor light emitting diode described above, a method of forming an active layer that emits light into a multi quantum well structure has been proposed in Korean Patent Publication No. 10-2010-0006547. However, the semiconductor light emitting diodes described in the above-mentioned documents are for reducing the light emitting area loss, and it is difficult to secure an effective light emitting area sufficiently, and in subsequent studies, various semiconductor light emitting diode structures capable of effectively increasing the effective light emitting area have been proposed. Cracks occur in the active layer or are oxidized through reaction with oxygen in an air gap due to heat generation of the semiconductor light emitting diode when used for a long time, thereby reducing the luminous efficiency.

따라서 본 발명은 종래 기술의 문제점을 해결하기 위하여 안출된 것으로, 본 발명이 이루고자 하는 기술적 과제는, 기둥부와 기둥지지부를 포함하는 클래딩을 형성하고, 기둥부와 기둥지지부를 따라서 활성층을 컨포멀(conformal)하게 형성하며, 활성층을 따라서 투명 전극이나 금속 전극을 컨포멀하게 형성함으로써 유효 발광 면적을 효과적으로 증가시킬 수 있으면서도, 활성층과 투명 전극이나 금속 전극 사이에 에어 갭(air gap)이 존재하지 않아 활성층에 크랙(crack)이 발생할 위험이 낮고, 에어 갭 내부의 산소에 의한 산화될 위험을 예방할 수 있는 반도체 발광 다이오드를 제공하는 것이다.Accordingly, the present invention has been made to solve the problems of the prior art, the technical problem to be achieved by the present invention is to form a cladding comprising a pillar portion and a pillar support, and conformal to the active layer along the pillar and pillar support ( and the effective light emitting area can be effectively increased by conformally forming a transparent electrode or a metal electrode along the active layer, but there is no air gap between the active layer and the transparent electrode or the metal electrode. It is to provide a semiconductor light emitting diode which has a low risk of cracking and can prevent the risk of oxidation by oxygen in the air gap.

또한 본 발명이 이루고자 하는 다른 기술적 과제는, 상술한 반도체 발광 다이오드를 용이하게 제조할 수 있는 반도체 발광 다이오드의 제조 방법을 제공하는 것이다.Another object of the present invention is to provide a method of manufacturing a semiconductor light emitting diode which can easily manufacture the above-described semiconductor light emitting diode.

본 발명이 이루고자 하는 기술적 과제들은 이상에서 언급한 기술적 과제들로 제한되지 않으며, 언급되지 않은 또 다른 기술적 과제들은 아래의 기재로부터 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 명확하게 이해될 수 있을 것이다.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are not intended to limit the invention to the precise forms disclosed. Other objects, which will be apparent to those skilled in the art, It will be possible.

상기와 같은 목적을 달성하기 위하여 본 발명의 제 1 실시예에 따른 반도체 발광 다이오드는 금속 전극, 상기 금속 전극 상에 n형 반도체 물질로 형성된 기둥지지부와, 상기 기둥지지부 상에 n형 반도체 물질로 다수의 기둥 모양으로 형성된 기둥부를 포함하는 n형 클래딩, 상기 기둥부의 상면과 측면을 둘러싸며 컨포멀하게 형성되고, 상기 기둥부 사이의 기둥지지부 상에 컨포멀하게 형성되며, 양자우물층과 장벽층이 교대로 적층된 활성부, 상기 활성부를 둘러싸며 p형 반도체 물질로 컨포멀하게 형성된 p형 클래딩 및 상기 p형 클래딩을 둘러싸며 투명 도전 물질로 컨포멀하게 형성된 투명 전극을 포함하며, 상기 기둥부와 상기 기둥지지부는 일체로 형성된다.In order to achieve the above object, the semiconductor light emitting diode according to the first embodiment of the present invention includes a metal electrode, a pillar support formed of an n-type semiconductor material on the metal electrode, and a plurality of n-type semiconductor materials on the pillar support. An n-type cladding comprising a pillar portion formed in the shape of a pillar, is conformally formed surrounding the top and side surfaces of the pillar portion, and conformally formed on the pillar support portion between the pillar portions, the quantum well layer and the barrier layer are An alternatingly stacked active portion, a p-type cladding conformally formed of a p-type semiconductor material surrounding the active portion, and a transparent electrode conformally formed of a transparent conductive material surrounding the p-type cladding; The pillar support is integrally formed.

상기와 같은 목적을 달성하기 위하여 본 발명의 제 2 실시예에 따른 반도체 발광 다이오드는 투명 전극, 상기 투명 전극 상에 n형 반도체 물질로 형성된 기둥지지부와, 상기 기둥지지부 상에 n형 반도체 물질로 다수의 기둥 모양으로 형성된 기둥부를 포함하는 n형 클래딩, 상기 기둥부의 상면과 측면을 둘러싸며 컨포멀하게 형성되고, 상기 기둥부 사이의 기둥지지부 상에 컨포멀하게 형성되며, 양자우물층과 장벽층이 교대로 적층된 활성부, 상기 활성부를 둘러싸며 p형 반도체 물질로 컨포멀하게 형성된 p형 클래딩 및 상기 p형 클래딩을 둘러싸며 반사 도전 물질로 컨포멀하게 형성된 금속 전극을 포함하며, 상기 기둥부와 상기 기둥지지부는 일체로 형성된다.In order to achieve the above object, a semiconductor light emitting diode according to a second embodiment of the present invention includes a transparent electrode, a pillar support formed of an n-type semiconductor material on the transparent electrode, and an n-type semiconductor material on the pillar support. An n-type cladding comprising a pillar portion formed in the shape of a pillar, is conformally formed surrounding the top and side surfaces of the pillar portion, and conformally formed on the pillar support portion between the pillar portions, the quantum well layer and the barrier layer are An alternatingly stacked active portion, a p-type cladding conformally formed of a p-type semiconductor material surrounding the active portion, and a metal electrode conformally formed of a reflective conductive material surrounding the p-type cladding; The pillar support is integrally formed.

상기와 같은 목적을 달성하기 위하여 본 발명의 제 3 실시예에 따른 반도체 발광 다이오드는 금속 전극, 상기 금속 전극 상에 p형 반도체 물질로 형성된 기둥지지부와, 상기 기둥지지부 상에 p형 반도체 물질로 다수의 기둥 모양으로 형성된 기둥부를 포함하는 p형 클래딩, 상기 기둥부의 상면과 측면을 둘러싸며 컨포멀하게 형성되고, 상기 기둥부 사이의 기둥지지부 상에 컨포멀하게 형성되며, 양자우물층과 장벽층이 교대로 적층된 활성부, 상기 활성부를 둘러싸며 n형 반도체 물질로 컨포멀하게 형성된 n형 클래딩 및 상기 n형 클래딩을 둘러싸며 투명 도전 물질로 컨포멀하게 형성된 투명 전극을 포함하며, 상기 기둥부와 상기 기둥지지부는 일체로 형성된다.In order to achieve the above object, a semiconductor light emitting diode according to a third embodiment of the present invention includes a metal electrode, a pillar support formed of a p-type semiconductor material on the metal electrode, and a plurality of p-type semiconductor materials on the pillar support. A p-type cladding comprising a pillar portion formed in the shape of a pillar, is formed conformally surrounding the upper surface and the side of the pillar portion, is conformally formed on the pillar support between the pillar portion, the quantum well layer and the barrier layer is An alternatingly stacked active portion, an n-type cladding conformally formed of an n-type semiconductor material surrounding the active portion, and a transparent electrode conformally formed of a transparent conductive material surrounding the n-type cladding; The pillar support is integrally formed.

상기와 같은 목적을 달성하기 위하여 본 발명의 제 4 실시예에 따른 반도체 발광 다이오드는 투명 전극, 상기 투명 전극 상에 p형 반도체 물질로 형성된 기둥지지부와, 상기 기둥지지부 상에 p형 반도체 물질로 다수의 기둥 모양으로 형성된 기둥부를 포함하는 p형 클래딩, 상기 기둥부의 상면과 측면을 둘러싸며 컨포멀하게 형성되고, 상기 기둥부 사이의 기둥지지부 상에 컨포멀하게 형성되며, 양자우물층과 장벽층이 교대로 적층된 활성부, 상기 활성부를 둘러싸며 n형 반도체 물질로 컨포멀하게 형성된 n형 클래딩 및 상기 n형 클래딩을 둘러싸며 반사 도전 물질로 컨포멀하게 형성된 금속 전극을 포함하며, 상기 기둥부와 상기 기둥지지부는 일체로 형성된다.In order to achieve the above object, a semiconductor light emitting diode according to a fourth embodiment of the present invention includes a transparent electrode, a pillar support formed of a p-type semiconductor material on the transparent electrode, and a plurality of p-type semiconductor materials on the pillar support. A p-type cladding comprising a pillar portion formed in the shape of a pillar, is formed conformally surrounding the upper surface and the side of the pillar portion, is conformally formed on the pillar support between the pillar portion, the quantum well layer and the barrier layer is An alternatingly stacked active portion, an n-type cladding conformally formed of an n-type semiconductor material surrounding the active portion, and a metal electrode conformally formed of a reflective conductive material surrounding the n-type cladding; The pillar support is integrally formed.

상기와 같은 다른 목적을 달성하기 위하여 본 발명의 일 실시예에 따른 반도체 발광 다이오드의 제조 방법은 반도체 기판 상에 n형 반도체 물질로 형성된 기둥지지부와, 상기 기둥지지부 상에 n형 반도체 물질로 다수의 기둥 모양으로 형성된 기둥부를 포함하는 n형 클래딩을 형성하는 단계, 상기 기둥부의 상면과 측면을 둘러싸며 컨포멀하게 양자우물층과 장벽층을 교대로 적층하고, 상기 기둥부 사이의 기둥지지부 상에 컨포멀하게 양자우물층과 장벽층을 교대로 적층하여 활성부를 형성하는 단계, 상기 활성부를 둘러싸며 p형 반도체 물질로 컨포멀하게 p형 클래딩을 형성하는 단계, 상기 p형 클래딩을 둘러싸며 투명 도전 물질로 컨포멀하게 투명 전극을 형성하는 단계 및 상기 기둥부가 형성되지 않은 기둥지지부의 저면에 금속 전극을 형성하는 단계를 포함하며, 상기 기둥부와 상기 기둥지지부는 일체로 형성된다.
In order to achieve the above object, a method of manufacturing a semiconductor light emitting diode according to an embodiment of the present invention includes a pillar support portion formed of an n-type semiconductor material on a semiconductor substrate, and a plurality of n-type semiconductor materials on the pillar support portion. Forming an n-type cladding including a pillar portion formed in a pillar shape, and alternately stacking a quantum well layer and a barrier layer around the top and side surfaces of the pillar portion, and forming a conduit on the pillar support portion between the pillar portions. Alternately stacking a quantum well layer and a barrier layer to form an active part, forming a p-type cladding conformally to a p-type semiconductor material surrounding the active part, and surrounding the p-type cladding to form a transparent conductive material And forming a metal electrode on the bottom surface of the pillar support portion in which the pillar portion is not formed. And including, the pole portion and the columnar support portion are integrally formed.

본 발명의 실시예들에 따른 반도체 발광 다이오드는 기둥부와 기둥지지부를 포함하는 클래딩을 형성하고, 기둥부와 기둥지지부를 따라서 활성층을 컨포멀(conformal)하게 형성하며, 활성층을 따라서 투명 전극이나 금속 전극을 컨포멀하게 형성함으로써 유효 발광 면적을 효과적으로 증가시킬 수 있으면서도, 활성층과 투명 전극이나 금속 전극 사이에 에어 갭(air gap)이 존재하지 않아 활성층에 크랙(crack)이 발생할 위험이 낮고, 에어 갭 내부의 산소에 의한 산화될 위험을 예방할 수 있다.The semiconductor light emitting diode according to the embodiments of the present invention forms a cladding including a pillar portion and a pillar support portion, forms an active layer conformally along the pillar portion and the pillar support portion, and forms a transparent electrode or a metal along the active layer. While the effective emission area can be effectively increased by forming the electrode conformally, there is no air gap between the active layer and the transparent electrode or the metal electrode, so there is a low risk of cracking in the active layer. The risk of oxidation by internal oxygen can be prevented.

또한, 본 발명의 실시예들에 따른 반도체 발광 다이오드의 제조 방법은 상술한 반도체 발광 다이오드를 용이하게 제조할 수 있다.
In addition, the method of manufacturing a semiconductor light emitting diode according to embodiments of the present invention can easily manufacture the above-described semiconductor light emitting diode.

도 1은 본 발명의 제 1 실시예에 따른 반도체 발광 다이오드의 사시도.
도 2는 본 발명의 제 1 실시예에 따른 반도체 발광 다이오드의 단면도.
도 3a 내지 도 3f는 본 발명의 제 1 실시예에 따른 반도체 발광 다이오드의 제조 공정을 도시한 단면도들.
도 4는 본 발명의 제 2 실시예에 따른 반도체 발광 다이오드의 사시도.
도 5는 본 발명의 제 2 실시예에 따른 반도체 발광 다이오드의 단면도.
도 6은 본 발명의 제 3 실시예에 따른 반도체 발광 다이오드의 사시도.
도 7은 본 발명의 제 3 실시예에 따른 반도체 발광 다이오드의 단면도.
도 8은 본 발명의 제 4 실시예에 따른 반도체 발광 다이오드의 사시도.
도 9는 본 발명의 제 4 실시예에 따른 반도체 발광 다이오드의 단면도.1 is a perspective view of a semiconductor light emitting diode according to a first embodiment of the present invention.
2 is a cross-sectional view of a semiconductor light emitting diode according to a first embodiment of the present invention.
3A to 3F are cross-sectional views illustrating a process of manufacturing a semiconductor light emitting diode according to a first embodiment of the present invention.
4 is a perspective view of a semiconductor light emitting diode according to a second embodiment of the present invention;
5 is a cross-sectional view of a semiconductor light emitting diode according to a second embodiment of the present invention.
6 is a perspective view of a semiconductor light emitting diode according to a third embodiment of the present invention.
7 is a cross-sectional view of a semiconductor light emitting diode according to a third embodiment of the present invention.
8 is a perspective view of a semiconductor light emitting diode according to a fourth embodiment of the present invention.
9 is a cross-sectional view of a semiconductor light emitting diode according to a fourth embodiment of the present invention.

이하, 본 발명의 바람직한 실시예를 첨부한 도면을 참조하여 설명하기로 한다. Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

본 발명의 제 1 실시예에 따른 반도체 발광 다이오드는 도 1 및 도 2에 도시된 것처럼, 금속 전극(31100), n형 클래딩(31210, 31221, 31222, 31223, 31224, 31225, 31226), 활성부(31300), p형 클래딩(31400) 및 투명 전극(31500)을 포함하여 구성될 수 있다.1 and 2, the semiconductor light emitting diode according to the first embodiment of the present invention, the metal electrode 31100, n-type cladding (31210, 31221, 31222, 31223, 31224, 31225, 31226), active portion 31300, a p-type cladding 31400, and a transparent electrode 31500.

n형 클래딩(31210, 31221, 31222, 31223, 31224, 31225, 31226)은 금속 전극(31100) 상에 n형 반도체 물질로 형성된 기둥지지부(31210)와, 기둥지지부(31210) 상에 n형 반도체 물질로 다수의 기둥 모양으로 형성된 기둥부(31221, 31222, 31223, 31224, 31225, 31226)를 포함하며, 이러한 n형 클래딩(31210, 31221, 31222, 31223, 31224, 31225, 31226)은 n형 GaN로 형성될 수 있다.The n-type cladding 331210, 31221, 31222, 31223, 31224, 31225, 31226 may be formed of a pillar support portion 3210 formed of an n-type semiconductor material on the metal electrode 31100 and an n-type semiconductor material on the pillar support portion 3310. Column portion 312 213, 31222, 31223, 31224, 31225, 31226 formed into a plurality of pillar shapes, and the n-type cladding 331210, 31221, 31222, 31223, 31224, 31225, 31226 Can be formed.

한편, 활성부(31300)는 기둥부(31221, 31222, 31223, 31224, 31225, 31226)의 상면과 측면을 둘러싸며 컨포멀하게 형성되고, 기둥부(31221, 31222, 31223, 31224, 31225, 31226) 사이의 기둥지지부(31210) 상에 컨포멀하게 형성되며, 양자우물층과 장벽층이 교대로 적층된다.On the other hand, the active part 31300 is formed conformally surrounding the upper and side surfaces of the pillars 312, 21, 31222, 31223, 31224, 31225, 31226, and pillars 312, 21, 31222, 31223, 31224, 31225, 31226. Conformally formed on the pillar support portion 3310 between, the quantum well layer and the barrier layer are alternately stacked.

구체적으로, 활성부(31300)는 AlGaN 양자우물층과 AlGaN 장벽층이 교대로 적층되며, 필요에 따라서는 AlGaN 양자우물층과 AlGaN 장벽층이 교대로 다수 적층될 수 있다.In detail, in the active part 31300, AlGaN quantum well layers and AlGaN barrier layers may be alternately stacked. If necessary, a plurality of AlGaN quantum well layers and AlGaN barrier layers may be alternately stacked.

또한, p형 클래딩(31400)은 활성부(31300)의 상면과 측면을 둘러싸며 p형 반도체 물질로 컨포멀하게 형성되며, 이러한 p형 클래딩(31400)은 p형 GaN로 형성될 수 있다.In addition, the p-type cladding 31400 may be conformally formed of a p-type semiconductor material surrounding the top and side surfaces of the active part 31300, and the p-type cladding 31400 may be formed of p-type GaN.

한편, 투명 전극(31500)은 ITO나 FTO 등의 투명 도전 물질로 p형 클래딩(31400)의 상면과 측면을 둘러싸며 컨포멀하게 형성된다.On the other hand, the transparent electrode 31500 is conformally formed by surrounding the top and side surfaces of the p-type cladding 31400 with a transparent conductive material such as ITO or FTO.

이하에서는 도 3a 내지 도 3f를 참조하여 본 발명의 제 1 실시예에 따른 반도체 발광 다이오드의 제조 방법에 대해서 설명한다.Hereinafter, a method of manufacturing a semiconductor light emitting diode according to a first embodiment of the present invention will be described with reference to FIGS. 3A to 3F.

먼저, 도 3a에 도시된 것처럼, 사파이어같은 반도체 기판(31600) 상에 n형 반도체 물질로 원자층 증착법(Atomic Layer Deposition; ALD) 등을 이용하여 n형 클래딩(31210, 31221, 31222, 31223, 31224, 31225, 31226)의 기둥지지부(31210)를 형성한다. 여기에서, n형 클래딩(31210, 31221, 31222, 31223, 31224, 31225, 31226)의 기둥지지부(31210)는 n형 GaN으로 형성될 수 있다.First, as shown in FIG. 3A, an n-type cladding 331210, 31221, 31222, 31223, 31224, and the like, are formed on the semiconductor substrate 31600 such as sapphire using an atomic layer deposition (ALD) method. , Pillar supports 331210 of 31225, 31226. Here, the pillar support 3312 of the n-type cladding (31210, 31221, 31222, 31223, 31224, 31225, 31226) may be formed of n-type GaN.

다음으로, 기둥지지부(31210) 상에 n형 반도체 물질로 다수의 기둥 모양으로 n형 클래딩(31210, 31221, 31222, 31223, 31224, 31225, 31226)의 기둥부(31221, 31222, 31223, 31224, 31225, 31226)를 형성한다. 여기에서, n형 클래딩(31210, 31221, 31222, 31223, 31224, 31225, 31226)의 기둥부(31221, 31222, 31223, 31224, 31225, 31226)는 n형 GaN으로 형성될 수 있다.Next, the pillar portions 331221, 31222, 31223, 31224, of the n-type claddings 331210, 31221, 31222, 31223, 31224, 31225, and 31226 in the form of a plurality of pillars on the pillar support 31210 with an n-type semiconductor material. 31225, 31226). In this case, the pillar portions 331221, 31222, 31223, 31224, 31225, and 31226 of the n-type cladding 3310, 31221, 31222, 31223, 31224, 31225, and 31226 may be formed of n-type GaN.

구체적으로 원자층 증착법(Atomic Layer Deposition; ALD) 등을 이용하여 벌크를 형성하고 식각법 등을 이용하여 다수의 기둥 모양을 형성한다.Specifically, the bulk is formed using atomic layer deposition (ALD), and the like, and a plurality of pillar shapes are formed by etching.

다른 방법으로는 기둥지지부(31210) 상에 PR(Photo Resist) pattern 등을 이용하여 n형 반도체 물질의 일부만 상부에 드러나도록 하고, 원자층 증착법(Atomic Layer Deposition; ALD) 등을 이용하여 상부에 드러난 n형 반도체 물질 상에 다시 n형 반도체 물질을 선택적으로 성장시킴으로써 n형 클래딩(31210, 31221, 31222, 31223, 31224, 31225, 31226)의 기둥부(31221, 31222, 31223, 31224, 31225, 31226)를 형성할 수도 있다.Alternatively, a portion of the n-type semiconductor material may be exposed on the pillar support 331210 using a PR (Photo Resist) pattern or the like and exposed on the pillar support 31210 using Atomic Layer Deposition (ALD). By selectively growing the n-type semiconductor material again on the n-type semiconductor material, the pillar portions 331221, 31222, 31223, 31224, 31225, 31226 of the n-type cladding 331210, 31221, 31222, 31223, 31224, 31225, 31226 May be formed.

다음으로, 기둥부(31221, 31222, 31223, 31224, 31225, 31226)의 상면과 측면을 둘러싸며 컨포멀하게 양자우물층과 장벽층을 교대로 적층하고, 기둥부(31221, 31222, 31223, 31224, 31225, 31226) 사이의 기둥지지부(31210) 상에 컨포멀하게 양자우물층과 장벽층을 교대로 적층하여 활성부(31300)를 형성한다.Next, the quantum well layer and the barrier layer are alternately stacked to surround the top and side surfaces of the pillar portions 331221, 31222, 31223, 31224, 31225, 31226, and the pillar portions 331221, 31222, 31223, 31224. And alternately stack the quantum well layer and the barrier layer on the pillar support portion 3210 between the first and second portions 31225 and 31226 to form the active portion 31300.

구체적으로, AlGaN 양자우물층과 AlGaN 장벽층을 원자층 증착법(Atomic Layer Deposition; ALD) 등을 이용하여 기둥부(31221, 31222, 31223, 31224, 31225, 31226)의 상면과 측면을 둘러싸며 컨포멀하게 적층하며, AlGaN 양자우물층과 AlGaN 장벽층을 원자층 증착법(Atomic Layer Deposition; ALD) 등을 이용하여 기둥부(31221, 31222, 31223, 31224, 31225, 31226) 사이의 기둥지지부(31210) 상에 컨포멀하게 적층한다.Specifically, the AlGaN quantum well layer and the AlGaN barrier layer are conformal by surrounding the top and side surfaces of the pillars 312, 21, 31222, 31223, 31224, 31225, and 31226 using atomic layer deposition (ALD). The AlGaN quantum well layer and the AlGaN barrier layer on the pillar support portion 3310 between the pillar portions 331221, 31222, 31223, 31224, 31225, and 31226 by using atomic layer deposition (ALD). Conformally to be laminated to.

여기에서, 활성부(31300)는 필요에 따라서는 AlGaN 양자우물층과 AlGaN 장벽층이 교대로 다수 적층될 수 있다.In this case, the active part 31300 may be alternately stacked with a plurality of AlGaN quantum well layers and AlGaN barrier layers as necessary.

다음으로, 활성부(31300)의 상면과 측면을 둘러싸며 p형 반도체 물질로 원자층 증착법(Atomic Layer Deposition; ALD) 등을 이용하여 컨포멀하게 p형 클래딩(31400)을 형성한다. 여기에서, p형 클래딩(31400)은 p형 GaN으로 형성될 수 있다.Next, the p-type cladding 31400 is conformally formed using an atomic layer deposition (ALD) method and the like by surrounding the top and side surfaces of the active part 31300. Here, the p-type cladding 31400 may be formed of p-type GaN.

다음으로, 사파이어 기판(31600)을 제거하고, 기둥부(12231, 31222, 31223, 31224, 31225, 31226)가 형성되지 않은 기둥지지부(31210)의 저면에 Titanium, Silver, Copper alloy 등의 반사 도전 물질로 스퍼터링법이나 전기도금법 등을 이용하여 금속 전극(31100)을 형성한다.Next, the reflective sapphire substrate 31600 is removed, and a reflective conductive material such as Titanium, Silver, or Copper alloy is formed on the bottom surface of the pillar support part 3210 on which the pillar parts 12231, 31222, 31223, 31224, 31225, and 31226 are not formed. The metal electrode 31100 is formed using a furnace sputtering method, an electroplating method, or the like.

다음으로, p형 클래딩(31400)의 상면과 측면을 둘러싸며 ITO나 FTO 등의 투명 도전 물질로 원자층 증착법(Atomic Layer Deposition; ALD) 등을 이용하여 컨포멀하게 투명 전극(31500)을 형성한다.Next, the transparent electrode 31500 is conformally formed by surrounding an upper surface and a side surface of the p-type cladding 31400 using an atomic layer deposition (ALD) method using a transparent conductive material such as ITO or FTO. .

여기에서, 반드시 금속 전극(31100)을 형성한 후에 투명 전극(31500)을 형성할 필요는 없으며, 투명 전극(31500)을 형성한 후에 금속 전극(31100)을 형성해도 무방하다.Here, it is not necessary to form the transparent electrode 31500 after the metal electrode 31100 is formed, and the metal electrode 31100 may be formed after the transparent electrode 31500 is formed.

도 4 및 도 5를 참조하여, 본 발명의 제 2 실시예에 따른 반도체 발광 다이오드에 대해서 설명한다. 이하에서는 본 발명의 제 1 실시예에 따른 반도체 발광 다이오드와의 차이점에 대해서만 설명하기로 한다.4 and 5, a semiconductor light emitting diode according to a second embodiment of the present invention will be described. Hereinafter, only differences from the semiconductor light emitting diode according to the first embodiment of the present invention will be described.

본 발명의 제 2 실시예에 따른 반도체 발광 다이오드는 투명 전극(32100) 상에 n형 반도체 물질로 형성된 기둥지지부(32210)와, 기둥지지부(32210) 상에 n형 반도체 물질로 다수의 기둥 모양으로 형성된 기둥부(32221, 32222, 32223, 32224, 32225, 32226)를 포함하는 n형 클래딩(32210, 32221, 32222, 32223, 32224, 32225, 32226)이 형성되고, p형 클래딩(32400)의 상면과 측면을 둘러싸며 반사 도전 물질로 컨포멀하게 금속 전극(32500)이 형성된다.The semiconductor light emitting diode according to the second embodiment of the present invention has a pillar support portion 3210 formed of an n-type semiconductor material on the transparent electrode 32100 and an n-type semiconductor material on the pillar support portion 32210 in a plurality of pillar shapes. N-type cladding (32210, 32221, 32222, 32223, 32224, 32225, 32226) including the formed pillars (32221, 32222, 32223, 32224, 32225, 32226) is formed, and the upper surface of the p-type cladding (32400) A metal electrode 32500 is formed conformally with a reflective conductive material surrounding the side surface.

도 6 및 도 7을 참조하여, 본 발명의 제 3 실시예에 따른 반도체 발광 다이오드에 대해서 설명한다. 이하에서는 본 발명의 제 1 실시예에 따른 반도체 발광 다이오드와의 차이점에 대해서만 설명하기로 한다.6 and 7, a semiconductor light emitting diode according to a third embodiment of the present invention will be described. Hereinafter, only differences from the semiconductor light emitting diode according to the first embodiment of the present invention will be described.

본 발명의 제 3 실시예에 따른 반도체 발광 다이오드는 금속 전극(33100) 상에 p형 반도체 물질로 형성된 기둥지지부(33210)와, 기둥지지부(33210) 상에 p형 반도체 물질로 다수의 기둥 모양으로 형성된 기둥부(33221, 33222, 33223, 33224, 33225, 33226)를 포함하는 p형 클래딩(33210, 33221, 33222, 33223, 33224, 33225, 33226)이 형성되고, 활성부(33300)의 상면과 측면을 둘러싸며 n형 반도체 물질로 컨포멀하게 n형 클래딩(33400)이 형성되며, n형 클래딩(33400)의 상면과 측면을 둘러싸며 투명 도전 물질로 컨포멀하게 투명 전극(33500)이 형성된다.The semiconductor light emitting diode according to the third embodiment of the present invention has a pillar support portion 3310 formed of a p-type semiconductor material on the metal electrode 33100 and a p-type semiconductor material formed on the pillar support portion 3332 in a plurality of pillar shapes. P-type cladding (33210, 33221, 33222, 33223, 33224, 33225, 33226) including the formed pillars (33221, 33222, 33223, 33224, 33225, 33226) is formed, the top and side surfaces of the active portion (33300) The n-type cladding 33400 is formed conformally to an n-type semiconductor material, and surrounds the top and side surfaces of the n-type cladding 33400 to form a transparent electrode 33500 conformally to a transparent conductive material.

도 8 및 도 9를 참조하여, 본 발명의 제 4 실시예에 따른 반도체 발광 다이오드에 대해서 설명한다. 이하에서는 본 발명의 제 3 실시예에 따른 반도체 발광 다이오드와의 차이점에 대해서만 설명하기로 한다.8 and 9, a semiconductor light emitting diode according to a fourth embodiment of the present invention will be described. Hereinafter, only differences from the semiconductor light emitting diode according to the third embodiment of the present invention will be described.

본 발명의 제 4 실시예에 따른 반도체 발광 다이오드는 투명 전극(34100) 상에 p형 반도체 물질로 형성된 기둥지지부(34210)와, 기둥지지부(34210) 상에 p형 반도체 물질로 다수의 기둥 모양으로 형성된 기둥부(34221, 34222, 34223, 34224, 34225, 34226)를 포함하는 p형 클래딩(34210, 34221, 34222, 34223, 34224, 34225, 34226)이 형성되고, n형 클래딩(34400)의 상면과 측면을 둘러싸며 반사 도전 물질로 컨포멀하게 금속 전극(34500)이 형성된다.The semiconductor light emitting diode according to the fourth embodiment of the present invention has a pillar support part 3410 formed of a p-type semiconductor material on the transparent electrode 34100 and a p-type semiconductor material on the pillar support part 3410 in a plurality of pillar shapes. P-type cladding 3410, 34221, 34222, 34223, 34224, 34225, 34226, including the formed pillar portions 34221, 34222, 34223, 34224, 34225, 34226, are formed, and an upper surface of the n-type cladding 34400. A metal electrode 34500 is formed conformally with a reflective conductive material surrounding the side surface.

이상, 본 발명을 본 발명의 원리를 예시하기 위한 바람직한 실시예와 관련하여 설명하고 도시하였지만, 본 발명은 그와 같이 도시되고 설명된 그대로의 구성 및 작용으로 한정되는 것이 아니다.While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments.

오히려, 첨부된 청구범위의 사상 및 범주를 일탈함이 없이 본 발명에 대한 다수의 변경 및 수정이 가능함을 당업자들은 잘 이해할 수 있을 것이다.Rather, those skilled in the art will appreciate that many modifications and variations of the present invention are possible without departing from the spirit and scope of the appended claims.

따라서, 그러한 모든 적절한 변경 및 수정과 균등물들도 본 발명의 범위에 속하는 것으로 간주되어야 할 것이다.
Accordingly, all such appropriate modifications and changes, and equivalents thereof, should be regarded as within the scope of the present invention.

Claims (20)

금속 전극;
상기 금속 전극 상에 n형 반도체 물질로 형성된 기둥지지부와, 상기 기둥지지부 상에 n형 반도체 물질로 다수의 기둥 모양으로 형성된 기둥부를 포함하는 n형 클래딩;
상기 기둥부의 상면과 측면을 둘러싸며 컨포멀하게 형성되고, 상기 기둥부 사이의 기둥지지부 상에 컨포멀하게 형성되며, 양자우물층과 장벽층이 교대로 적층된 활성부;
상기 활성부를 둘러싸며 p형 반도체 물질로 컨포멀하게 형성된 p형 클래딩; 및
상기 p형 클래딩을 둘러싸며 투명 도전 물질로 컨포멀하게 형성된 투명 전극을 포함하며,
상기 기둥부와 상기 기둥지지부는 일체로 형성되는 반도체 발광 다이오드.
Metal electrodes;
An n-type cladding including a pillar support portion formed of an n-type semiconductor material on the metal electrode and a pillar portion formed in a plurality of pillar shapes of the n-type semiconductor material on the pillar support portion;
An active part surrounding the top and side surfaces of the pillar part and being conformally formed on the pillar support part between the pillar parts, wherein an quantum well layer and a barrier layer are alternately stacked;
A p-type cladding surrounding the active portion and conformally formed of a p-type semiconductor material; And
A transparent electrode surrounding the p-type cladding and conformally formed of a transparent conductive material,
And the pillar portion and the pillar support portion are integrally formed.
제1항에 있어서,
상기 n형 클래딩은 n형 GaN로 형성되고, 상기 p형 클래딩은 p형 GaN로 형성된 반도체 발광 다이오드.
The method of claim 1,
And the n-type cladding is formed of n-type GaN, and the p-type cladding is formed of p-type GaN.
삭제delete 삭제delete 투명 전극;
상기 투명 전극 상에 n형 반도체 물질로 형성된 기둥지지부와, 상기 기둥지지부 상에 n형 반도체 물질로 다수의 기둥 모양으로 형성된 기둥부를 포함하는 n형 클래딩;
상기 기둥부의 상면과 측면을 둘러싸며 컨포멀하게 형성되고, 상기 기둥부 사이의 기둥지지부 상에 컨포멀하게 형성되며, 양자우물층과 장벽층이 교대로 적층된 활성부;
상기 활성부를 둘러싸며 p형 반도체 물질로 컨포멀하게 형성된 p형 클래딩; 및
상기 p형 클래딩을 둘러싸며 반사 도전 물질로 컨포멀하게 형성된 금속 전극을 포함하며,
상기 기둥부와 상기 기둥지지부는 일체로 형성되는 반도체 발광 다이오드.
Transparent electrode;
An n-type cladding including a pillar support portion formed of an n-type semiconductor material on the transparent electrode and a pillar portion formed in a plurality of pillar shapes of the n-type semiconductor material on the pillar support portion;
An active part surrounding the top and side surfaces of the pillar part and being conformally formed on the pillar support part between the pillar parts, wherein an quantum well layer and a barrier layer are alternately stacked;
A p-type cladding surrounding the active portion and conformally formed of a p-type semiconductor material; And
A metal electrode surrounding the p-type cladding and conformally formed of a reflective conductive material,
And the pillar portion and the pillar support portion are integrally formed.
제5항에 있어서,
상기 n형 클래딩은 n형 GaN로 형성되고, 상기 p형 클래딩은 p형 GaN로 형성된 반도체 발광 다이오드.
The method of claim 5,
And the n-type cladding is formed of n-type GaN, and the p-type cladding is formed of p-type GaN.
삭제delete 삭제delete 금속 전극;
상기 금속 전극 상에 p형 반도체 물질로 형성된 기둥지지부와, 상기 기둥지지부 상에 p형 반도체 물질로 다수의 기둥 모양으로 형성된 기둥부를 포함하는 p형 클래딩;
상기 기둥부의 상면과 측면을 둘러싸며 컨포멀하게 형성되고, 상기 기둥부 사이의 기둥지지부 상에 컨포멀하게 형성되며, 양자우물층과 장벽층이 교대로 적층된 활성부;
상기 활성부를 둘러싸며 n형 반도체 물질로 컨포멀하게 형성된 n형 클래딩; 및
상기 n형 클래딩을 둘러싸며 투명 도전 물질로 컨포멀하게 형성된 투명 전극을 포함하며,
상기 기둥부와 상기 기둥지지부는 일체로 형성되는 반도체 발광 다이오드.
Metal electrodes;
A p-type cladding including a pillar support portion formed of a p-type semiconductor material on the metal electrode and a pillar portion formed of a plurality of pillar shapes of a p-type semiconductor material on the pillar support portion;
An active part surrounding the top and side surfaces of the pillar part and being conformally formed on the pillar support part between the pillar parts, wherein an quantum well layer and a barrier layer are alternately stacked;
An n-type cladding surrounding the active portion and conformally formed of an n-type semiconductor material; And
A transparent electrode surrounding the n-type cladding and conformally formed of a transparent conductive material,
And the pillar portion and the pillar support portion are integrally formed.
제9항에 있어서,
상기 n형 클래딩은 n형 GaN로 형성되고, 상기 p형 클래딩은 p형 GaN로 형성된 반도체 발광 다이오드.
10. The method of claim 9,
And the n-type cladding is formed of n-type GaN, and the p-type cladding is formed of p-type GaN.
삭제delete 삭제delete 투명 전극;
상기 투명 전극 상에 p형 반도체 물질로 형성된 기둥지지부와, 상기 기둥지지부 상에 p형 반도체 물질로 다수의 기둥 모양으로 형성된 기둥부를 포함하는 p형 클래딩;
상기 기둥부의 상면과 측면을 둘러싸며 컨포멀하게 형성되고, 상기 기둥부 사이의 기둥지지부 상에 컨포멀하게 형성되며, 양자우물층과 장벽층이 교대로 적층된 활성부;
상기 활성부를 둘러싸며 n형 반도체 물질로 컨포멀하게 형성된 n형 클래딩; 및
상기 n형 클래딩을 둘러싸며 반사 도전 물질로 컨포멀하게 형성된 금속 전극을 포함하며,
상기 기둥부와 상기 기둥지지부는 일체로 형성되는 반도체 발광 다이오드.
Transparent electrode;
A p-type cladding including a pillar support formed of a p-type semiconductor material on the transparent electrode and a pillar portion formed of a plurality of pillars of p-type semiconductor material on the pillar support;
An active part surrounding the top and side surfaces of the pillar part and being conformally formed on the pillar support part between the pillar parts, wherein an quantum well layer and a barrier layer are alternately stacked;
An n-type cladding surrounding the active portion and conformally formed of an n-type semiconductor material; And
A metal electrode surrounding the n-type cladding and conformally formed of a reflective conductive material;
And the pillar portion and the pillar support portion are integrally formed.
제13항에 있어서,
상기 n형 클래딩은 n형 GaN로 형성되고, 상기 p형 클래딩은 p형 GaN로 형성된 반도체 발광 다이오드.
The method of claim 13,
And the n-type cladding is formed of n-type GaN, and the p-type cladding is formed of p-type GaN.
삭제delete 삭제delete 반도체 기판 상에 n형 반도체 물질로 형성된 기둥지지부와, 상기 기둥지지부 상에 n형 반도체 물질로 다수의 기둥 모양으로 형성된 기둥부를 포함하는 n형 클래딩을 형성하는 단계;
상기 기둥부의 상면과 측면을 둘러싸며 컨포멀하게 양자우물층과 장벽층을 교대로 적층하고, 상기 기둥부 사이의 기둥지지부 상에 컨포멀하게 양자우물층과 장벽층을 교대로 적층하여 활성부를 형성하는 단계;
상기 활성부를 둘러싸며 p형 반도체 물질로 컨포멀하게 p형 클래딩을 형성하는 단계;
상기 p형 클래딩을 둘러싸며 투명 도전 물질로 컨포멀하게 투명 전극을 형성하는 단계; 및
상기 기둥부가 형성되지 않은 기둥지지부의 저면에 금속 전극을 형성하는 단계를 포함하며,
상기 기둥부와 상기 기둥지지부는 일체로 형성되는 반도체 발광 다이오드의 제조 방법.
Forming an n-type cladding comprising a pillar support portion formed of an n-type semiconductor material on the semiconductor substrate and a pillar portion formed in a plurality of pillar shapes of the n-type semiconductor material on the pillar support portion;
The quantum well layer and the barrier layer are conformally stacked alternately surrounding the top and side surfaces of the pillar portion, and the quantum well layer and the barrier layer are alternately stacked on the pillar support portion between the pillar portions to form an active portion. Doing;
Surrounding the active portion to form a p-type cladding conformally with a p-type semiconductor material;
Forming a transparent electrode conformally to a transparent conductive material surrounding the p-type cladding; And
Forming a metal electrode on a bottom surface of the pillar support portion in which the pillar portion is not formed;
The pillar part and the pillar support part are integrally formed.
제17항에 있어서,
상기 n형 클래딩은 n형 GaN로 형성되고, 상기 p형 클래딩은 p형 GaN로 형성된 반도체 발광 다이오드의 제조 방법.
18. The method of claim 17,
And the n-type cladding is formed of n-type GaN, and the p-type cladding is formed of p-type GaN.
삭제delete 삭제delete
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