KR101310916B1 - Apparatus for evaporation and Method for evaporation by the same - Google Patents

Abstract

The present invention is located in the chamber, the lower portion of the chamber, a source for receiving the deposition material and discharge the deposition material at a certain concentration, a plurality of inclined at an inclination of 30 to 90 degrees with respect to one side of the chamber in which the source is located to face the source A deposition apparatus comprising a fixing means for placing a substrate is provided.

Shadow Mask, Deposition Device

Description

Evaporation apparatus and evaporation method using the same {Apparatus for evaporation and Method for evaporation by the same}

1 is a schematic diagram showing the structure of a deposition apparatus according to the prior art.

FIG. 2A is a schematic diagram showing an arrangement structure of a substrate in a deposition apparatus according to a first embodiment of the present invention. FIG.

FIG. 2B is a schematic diagram showing the structure of the fixing means applied to the deposition apparatus on FIG. 2A. FIG.

2C to 2D are schematic diagrams showing an operating state of a substrate inside the deposition apparatus on FIG. 2A during the deposition process.

3A is a schematic diagram showing an arrangement structure of a substrate in a deposition apparatus according to a second embodiment of the present invention.

3B is a schematic diagram showing the structure of the fixing means applied to the deposition apparatus on FIG. 3A.

Description of the Related Art [0002]

200: deposition apparatus 210: chamber

220: source 230: substrate

280: fixing means 280a: rotation axis

280b: base substrate 280c: chuck

The present invention relates to a deposition apparatus and a deposition method using the same.

Recently, various flat panel display devices that can reduce weight and volume, which are disadvantages of cathode ray tubes, have emerged. Such flat panel displays include liquid crystal displays, field emission displays, plasma display panels, and light emitting devices. Among them, the electroluminescent device has a high response time with a response speed of 1 ms or less, and has been studied as a next-generation display due to characteristics such as low power consumption, wide viewing angle, and high contrast.

In general, an electroluminescent device includes a substrate, an anode located on the substrate, an emission layer (EML) located on the anode, and a cathode located on the emission layer. In such an electroluminescent device, when a voltage is applied between the anode and the cathode, holes and electrons are injected into the light emitting layer, and holes and electrons injected into the light emitting layer recombine in the light emitting layer to generate excitons, and the excitons are excited. The light emits as it transitions from the ground to the ground state.

Such an electroluminescent device includes subpixel regions that implement red, green, and blue (R, G, B) or red, green, and blue (R, G, B) to implement a full color display. It could include pixel regions that selectively include a light emitting layer to implement. Such sub-pixel regions or pixel regions could be formed by depositing respective light emitting layers using a shadow mask.

The deposition method as described above may be applied to various cases of forming a thin film on one side of a target to be deposited as well as the light emitting layer of the flat panel display device including the electroluminescent device.

1 is a schematic diagram showing the structure of a deposition apparatus according to the prior art.

Referring to FIG. 1, the source 120 accommodates the deposition material and discharges the deposition material at a predetermined concentration inside the chamber 110.

Substrate 130 is positioned so that the deposition region faces source 120. Although not shown, the substrate 130 may be fixedly disposed in the chamber 110 by the fixing means of the chuck structure.

The shadow mask 140 may be located between the source 120 and the substrate 130. The shadow mask 140 selectively exposed the deposition region on the substrate 130 by including an opening of a pattern. The shadow mask 140 may be applied to the magnet 150 while the opening pattern is aligned to correspond to the deposition region on the substrate 130.

When the deposition process is performed through the conventional deposition apparatus 100 having the above structure, the amount of the deposition material discharged from the source 120 is deposited on the substrate 130 is limited to a certain ratio, the discharged deposition Most of the material was discarded, resulting in increased process costs.

In addition, in performing the deposition process on a plurality of substrates, time was required to control the vacuum atmosphere in the chamber 110. This increased the overall process time (Tact time), resulting in a decrease in output per unit time.

Accordingly, an object of the present invention is to provide a deposition apparatus and a deposition method capable of increasing the use efficiency of the deposition material to reduce the process cost, and reduce the process time to increase the yield per unit time.

In order to achieve the above object, the present invention is located in the chamber, the lower portion of the chamber, the source for receiving the deposition material and discharge the deposition material at a constant concentration, inclined at an inclination of 30 to 90 degrees relative to one side of the chamber in which the source is located Provided is a deposition apparatus comprising securing means for placing a plurality of substrates to face the source of the loser.

The securing means may rotate about the waterline leading from the center of the substrate to the chamber.

The chamber can rotate so that the substrate rotates about the source.

The fixing means may have a chuck structure.

The source may include a deposition material outlet in the form of a dome.

In another aspect, the invention provides a deposition apparatus comprising a chamber, a source for receiving deposition material at the bottom of the chamber and discharging the deposition material at a constant concentration, and a securing means for securing placement of the substrate inside the chamber, wherein Supplying a substrate, the substrate being inclined at an inclination of 30 to 90 degrees with respect to one side of the chamber in which the source is located, and arranged in a fixing means to face the source.

The securing means may rotate about the waterline leading from the center of the substrate to the chamber.

The chamber can rotate so that the substrate rotates about the source.

The fixing means may have a chuck structure.

The source may include a deposition material outlet in the form of a dome.

Hereinafter, a deposition apparatus and a deposition method using the same according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

≪ Embodiment 1 >

FIG. 2A is a schematic diagram showing an arrangement structure of a substrate in a deposition apparatus according to a first embodiment of the present invention. FIG. FIG. 2B is a schematic diagram showing the structure of the fixing means applied to the deposition apparatus on FIG. 2A.

2A and 2B, a source 220 is disposed in the chamber 210 to receive the deposition material and discharge the deposition material at a predetermined concentration. The plurality of substrates 230 are disposed such that the deposition region faces the source 220. The substrates 230 may be fixedly arranged in various patterns within the chamber 210 by the fixing means 280. The fixing means 280 may include a rotation shaft 280a connected to the external driver and a base substrate 280b and a chuck 280c for fixing the substrate 230. The chuck 280c is in perspective control with the base substrate 280b, and the substrate 230 in the chamber 210 may be fixedly disposed by bringing the substrate 230 into close contact with the base substrate 280b. In addition, since the rotating shaft 280a is connected to an external driving unit, for example, a vibration motor to rotate the base substrate 280b and the chuck 280c, the substrate 230 fixed to the fixing means 280 may rotate. In this way, when the substrate 230 is rotated by the fixing means 280, the uniformity of the deposition is improved.

As described above, in the deposition apparatus 200 according to the first embodiment of the present invention, since a plurality of substrates 230 are disposed to surround the source 220 in one chamber 210, the deposition apparatus 200 is discharged from the source 220. It is possible to reduce the waste amount of the deposition material. In addition, since the deposition process is simultaneously performed on the plurality of substrates 230, the production rate per unit time may be greatly improved.

On the other hand, the substrates 230 may be disposed to have an inclination of 30 to 90 degrees with respect to one side of the chamber 210 in which the source 220 is located. That is, when the source 220 is located on the lower side of the chamber 210, the substrate 230 may be inclined in an angle range of 30 to 90 degrees based on the lower side of the chamber 210. As such, the inclined arrangement of the substrates 230 is such that when the deposition surface of the substrate 230 is disposed downward (A = 0 ° or A = 180 °), As a result, a phenomenon in which a portion of the substrate 230 is struck can be prevented. Therefore, the deposition apparatus 200 according to the first embodiment of the present invention can ensure the precision of the deposition process and the uniformity of the film formation, thereby improving the process yield.

2C to 2D are schematic diagrams showing an operating state of a substrate inside the deposition apparatus on FIG. 2A during the deposition process. Hereinafter, a deposition method using a deposition apparatus according to a first embodiment of the present invention will be described with reference to FIGS. 2A to 2D.

A plurality of substrates 230 to be deposited are supplied into the chamber 210 in which the source 220 is disposed at one side. The supplied substrates 230 may be fixedly arranged by fixing means 280 having a structure as shown in FIG. 2B. In this case, each of the substrates 230 may be disposed to have an inclination of 30 to 90 degrees based on one side of the chamber 210 in which the source 220 is located toward the source 220. That is, when the source 220 is located on the lower side of the chamber 210, the substrate 230 may be inclined in an angle range of 30 to 90 degrees based on the lower side of the chamber 210. As such, the inclined arrangement of the substrates 230 is such that when the deposition surface of the substrate 230 is disposed downward (A = 0 ° or A = 180 °), As a result, a phenomenon in which a portion of the substrate 230 is struck can be prevented.

Next, as shown in FIG. 2C, the source 220 is fixedly disposed at one side of the chamber (210 of FIG. 2A), and one axis connecting the substrate 230 and the opposite side of the chamber 210 is fixed. The substrate 230 may be rotated as a reference. In this case, the rotation axis of the substrate 230 may be a repair line directed toward the chamber 210 based on the center of the substrate 230. This is because the substrate 230 can be rotated stably.

In another aspect, as shown in FIG. 2D, the fixing means (280 of FIG. 2B) or the chamber (FIG. 2A) such that the plurality of substrates 230 rotate about the source 220 in an arrangement surrounding the source 220. 210 can be rotated.

When the substrate 230 is rotated by any of the above two methods, the drooping of the substrate 230 may be more effectively prevented than when the substrate 230 is simply inclined. This is because when the substrates 230 are arranged to be inclined around the source 220, the substrates 230 are not affected by their own weight, as well as the chamber (210 in FIG. 2A) or the fixing means (280 in FIG. 2B). This is because the centrifugal force acts on the substrate 230 by the rotation of, thereby increasing the effect of preventing the drooping of the substrate 230.

Accordingly, the deposition method according to the first embodiment of the present invention can sufficiently secure the precision and uniformity of the deposition process on the substrate 230. In addition, since the plurality of substrates 230 are simultaneously applied to the deposition process, the amount of wasted deposition material can be reduced, and the production rate per unit time is increased.

In the first exemplary embodiment of the present invention, the substrate 230 is rotated through the selective rotation of the fixing means 280 or the chamber 210. For example, the deposition apparatus and the deposition method using the same according to the present invention are described. The substrate may rotate about itself and rotate about its source.

≪ Embodiment 2 >

3A is a schematic diagram showing an arrangement structure of a substrate in a deposition apparatus according to a second embodiment of the present invention. FIG. 3B is a schematic diagram showing the structure of the fixing means applied to the deposition apparatus on FIG. 3A.

Referring to FIG. 3A, a source 320 is located inside the chamber 310. In this case, the source 320 may include a deposition material discharge part 320a having a dome shape. The dome-shaped deposition material discharge part 320a is an efficient structure for dispersing and depositing the deposition material evenly on the substrates 330 disposed surrounding the source 320. Such a source 320 may rotate in a predetermined radius in the deposition chamber 310. For example, the source 320 may be positioned to be biased toward one side in the chamber 310 at a predetermined distance from the center of the lower surface of the chamber 310. In addition, the repair of the center of the lower surface of the chamber 310 can be rotated about the reference axis.

Referring to FIG. 3B, the structure of the fixing means 380 applied to the deposition apparatus 300 according to the second embodiment of the present invention will be described below.

The fixing means 380 may include a rotation shaft 380a connected to the external driver and first and second base substrates 381b and 382b and chucks 380c for fixing the substrate 330. The chuck 380c is perspectively adjusted with the first base substrate 381b, and the substrate 330 in the chamber 310 may be fixedly disposed by bringing the substrate 330 into close contact with the first base substrate 381b. In addition, a shadow mask 340 may be disposed between the substrate 330 and the source 320. The shadow mask 340 includes an opening of a predetermined pattern, thereby selectively depositing a portion of the area on the substrate 330. The magnet 380d may be located between the first base substrate 381b and the second base substrate 382b of the fixing means 380 to align the shadow mask 340 and the substrate 330.

In the deposition apparatus of the second embodiment of the present invention having the above structure, the substrates 330 or the source 320 may be selectively or simultaneously rotated on the same principle as mentioned in the first embodiment of the present invention. Therefore, the deposition apparatus of the second embodiment of the present invention and the deposition method using the same can sufficiently secure the precision and uniformity of the deposition process on the substrate 330. In addition, since the plurality of substrates 330 are simultaneously applied to the deposition process, the amount of wasted deposition material can be reduced, and the production rate per unit time is increased.

In the first and second embodiments of the present invention, the substrate or the source is selectively rotated. However, the present invention is not limited thereto, and the deposition process may be performed while the substrate and the source are rotated at the same time. .

In addition, the scope of the present invention is not limited to the number of substrates disposed in the chamber.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood that the invention may be practiced. Therefore, the embodiments described above are to be understood as illustrative and not restrictive in all aspects. In addition, the scope of the present invention is indicated by the following claims rather than the detailed description. Also, all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included within the scope of the present invention.

The present invention can provide a deposition apparatus and a deposition method capable of increasing the use efficiency of the deposition material to reduce the process cost, reduce the processing time to increase the yield per unit time.

Claims (12)

chamber; A source positioned below the chamber, the source receiving deposition material and discharging the deposition material at a constant concentration; Fixing means for arranging a plurality of substrates to be inclined at an inclination of 30 to 90 degrees with respect to one side of the chamber in which the source is located to face the source, And the source rotates at a predetermined radius in the chamber. The method of claim 1, And said fixing means rotates an axis of water extending from the center of said substrate disposed in said fixing means to said chamber. The method according to claim 1 or 2, And the chamber rotates to rotate the substrate about the source. The method according to claim 1 or 2, And the source rotates about a centerline of the lower surface of the chamber with a reference axis. The method of claim 1, And the fixing means has a chuck structure. The method of claim 1, The source includes a deposition material outlet in the form of a dome. A deposition apparatus comprising a chamber, a source for receiving deposition material under the chamber and discharging the deposition material at a predetermined concentration, and fixing means for fixedly placing a substrate inside the chamber, Supplying a plurality of substrates into the chamber; Disposing the substrate to the fixing means such that the substrate is inclined at an inclination of 30 to 90 degrees with respect to one side of the chamber in which the source is located to face the source; And Rotating the source to a predetermined radius in the chamber. 8. The method of claim 7, And said fixing means rotates about an axis of water extending from the center of said substrate disposed in said fixing means to said chamber. 9. The method according to claim 7 or 8, And the chamber rotates to rotate the substrate about the source. 9. The method according to claim 7 or 8, And the source is rotated about a center of the bottom surface of the chamber with a reference axis. 8. The method of claim 7, And said fixing means has a chuck structure. 8. The method of claim 7, And the source comprises a dome shaped deposition material outlet.

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