KR101289771B1 - 마이크로파 플라즈마원 및 플라즈마 처리 장치 - Google Patents
마이크로파 플라즈마원 및 플라즈마 처리 장치 Download PDFInfo
- Publication number
- KR101289771B1 KR101289771B1 KR1020110106826A KR20110106826A KR101289771B1 KR 101289771 B1 KR101289771 B1 KR 101289771B1 KR 1020110106826 A KR1020110106826 A KR 1020110106826A KR 20110106826 A KR20110106826 A KR 20110106826A KR 101289771 B1 KR101289771 B1 KR 101289771B1
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- South Korea
- Prior art keywords
- microwave
- plasma
- microwaves
- introduction mechanisms
- microwave introduction
- Prior art date
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- 239000003989 dielectric material Substances 0.000 description 3
- RDYMFSUJUZBWLH-UHFFFAOYSA-N endosulfan Chemical compound C12COS(=O)OCC2C2(Cl)C(Cl)=C(Cl)C1(Cl)C2(Cl)Cl RDYMFSUJUZBWLH-UHFFFAOYSA-N 0.000 description 3
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Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32293—Microwave generated discharge using particular waveforms, e.g. polarised waves
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/461—Microwave discharges
- H05H1/463—Microwave discharges using antennas or applicators
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010234688A JP2012089334A (ja) | 2010-10-19 | 2010-10-19 | マイクロ波プラズマ源およびプラズマ処理装置 |
JPJP-P-2010-234688 | 2010-10-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20120040677A KR20120040677A (ko) | 2012-04-27 |
KR101289771B1 true KR101289771B1 (ko) | 2013-07-26 |
Family
ID=45933068
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020110106826A KR101289771B1 (ko) | 2010-10-19 | 2011-10-19 | 마이크로파 플라즈마원 및 플라즈마 처리 장치 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20120090782A1 (zh) |
JP (1) | JP2012089334A (zh) |
KR (1) | KR101289771B1 (zh) |
CN (1) | CN102458032A (zh) |
TW (1) | TW201247035A (zh) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5893865B2 (ja) * | 2011-03-31 | 2016-03-23 | 東京エレクトロン株式会社 | プラズマ処理装置およびマイクロ波導入装置 |
JP5601348B2 (ja) * | 2012-05-17 | 2014-10-08 | 株式会社島津製作所 | プラズマ発生ユニット及び表面波励起プラズマ処理装置 |
JP6037688B2 (ja) | 2012-07-09 | 2016-12-07 | 東京エレクトロン株式会社 | マイクロ波導入モジュールにおける異常検知方法 |
WO2015029090A1 (ja) * | 2013-08-30 | 2015-03-05 | 国立大学法人東北大学 | プラズマ処理装置およびプラズマ処理方法 |
JP6356415B2 (ja) * | 2013-12-16 | 2018-07-11 | 東京エレクトロン株式会社 | マイクロ波プラズマ源およびプラズマ処理装置 |
JP6478748B2 (ja) * | 2015-03-24 | 2019-03-06 | 東京エレクトロン株式会社 | マイクロ波プラズマ源およびプラズマ処理装置 |
JP6509049B2 (ja) * | 2015-06-05 | 2019-05-08 | 東京エレクトロン株式会社 | マイクロ波プラズマ源およびプラズマ処理装置 |
JP6694736B2 (ja) | 2016-03-14 | 2020-05-20 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP6671230B2 (ja) * | 2016-04-26 | 2020-03-25 | 東京エレクトロン株式会社 | プラズマ処理装置およびガス導入機構 |
JP2018006718A (ja) * | 2016-07-08 | 2018-01-11 | 東京エレクトロン株式会社 | マイクロ波プラズマ処理装置 |
CN106987827B (zh) * | 2017-04-14 | 2019-03-29 | 太原理工大学 | 等离子体化学气相沉积微波谐振腔及装置 |
JP6353963B2 (ja) * | 2017-07-13 | 2018-07-04 | 東京エレクトロン株式会社 | マイクロ波プラズマ処理装置及びマイクロ波供給方法 |
JP6960813B2 (ja) * | 2017-09-20 | 2021-11-05 | 東京エレクトロン株式会社 | グラフェン構造体の形成方法および形成装置 |
JP7026498B2 (ja) * | 2017-12-12 | 2022-02-28 | 東京エレクトロン株式会社 | アンテナ及びプラズマ成膜装置 |
JP2019106358A (ja) * | 2017-12-14 | 2019-06-27 | 東京エレクトロン株式会社 | マイクロ波プラズマ処理装置 |
TWI826925B (zh) | 2018-03-01 | 2023-12-21 | 美商應用材料股份有限公司 | 電漿源組件和氣體分配組件 |
US11862432B2 (en) * | 2018-07-02 | 2024-01-02 | Mitsubishi Electric Corporation | Microwave heating device |
CN111372343A (zh) * | 2018-12-26 | 2020-07-03 | 财团法人工业技术研究院 | 分布式微波相位控制方法 |
US11631583B2 (en) | 2019-10-25 | 2023-04-18 | Applied Materials, Inc. | RF power source operation in plasma enhanced processes |
WO2021131097A1 (ja) * | 2019-12-25 | 2021-07-01 | 三菱電機株式会社 | マイクロ波プラズマ処理装置 |
US11623197B2 (en) * | 2020-01-23 | 2023-04-11 | Lyten, Inc. | Complex modality reactor for materials production and synthesis |
AT523626B1 (de) * | 2020-05-22 | 2021-10-15 | Anton Paar Gmbh | Hohlleiter-Einkoppeleinheit |
CN112689376B (zh) * | 2021-03-15 | 2021-06-18 | 四川大学 | 一种采用压电材料的微波等离子体射流激发装置 |
FR3120861B1 (fr) * | 2021-03-22 | 2023-11-24 | Sakowin | Unité de production décarbonée de dihydrogène |
WO2024111102A1 (ja) * | 2022-11-25 | 2024-05-30 | 三菱電機株式会社 | 半導体加工装置、制御回路、及び半導体加工方法 |
Citations (3)
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JP2004538367A (ja) | 2001-08-07 | 2004-12-24 | カール−ツアイス−シュティフツンク | 物品をコーティングする装置 |
JP2006310794A (ja) | 2005-03-30 | 2006-11-09 | Tokyo Electron Ltd | プラズマ処理装置と方法 |
WO2008153053A1 (ja) | 2007-06-11 | 2008-12-18 | Tokyo Electron Limited | プラズマ処理装置、給電装置およびプラズマ処理装置の使用方法 |
Family Cites Families (16)
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US5230740A (en) * | 1991-12-17 | 1993-07-27 | Crystallume | Apparatus for controlling plasma size and position in plasma-activated chemical vapor deposition processes comprising rotating dielectric |
US5573595A (en) * | 1995-09-29 | 1996-11-12 | Lam Research Corporation | Methods and apparatus for generating plasma |
JP4017274B2 (ja) * | 1999-01-07 | 2007-12-05 | 松下電器産業株式会社 | プラズマ処理方法及び装置 |
JP4523118B2 (ja) * | 2000-06-14 | 2010-08-11 | 東京エレクトロン株式会社 | プラズマ処理装置 |
KR20020091430A (ko) * | 2001-05-30 | 2002-12-06 | 사단법인 고등기술연구원 연구조합 | 원편광 공진 모드를 이용한 플라즈마 방전 시스템 |
JP3969081B2 (ja) * | 2001-12-14 | 2007-08-29 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP3935401B2 (ja) * | 2002-07-22 | 2007-06-20 | 東京エレクトロン株式会社 | 誘導結合プラズマ処理装置 |
US7806077B2 (en) * | 2004-07-30 | 2010-10-05 | Amarante Technologies, Inc. | Plasma nozzle array for providing uniform scalable microwave plasma generation |
CN101385129B (zh) * | 2006-07-28 | 2011-12-28 | 东京毅力科创株式会社 | 微波等离子体源和等离子体处理装置 |
US20100183827A1 (en) * | 2007-06-11 | 2010-07-22 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
US8710354B2 (en) * | 2007-12-19 | 2014-04-29 | Honeywell International Inc. | Solar cell with hyperpolarizable absorber |
EP2245912A2 (en) * | 2008-01-31 | 2010-11-03 | Applied Materials, Inc. | Multiple phase rf power for electrode of plasma chamber |
JP2010170974A (ja) * | 2008-12-22 | 2010-08-05 | Tokyo Electron Ltd | プラズマ源およびプラズマ処理装置 |
US8312839B2 (en) * | 2009-03-24 | 2012-11-20 | Applied Materials, Inc. | Mixing frequency at multiple feeding points |
WO2010110256A1 (ja) * | 2009-03-27 | 2010-09-30 | 東京エレクトロン株式会社 | チューナおよびマイクロ波プラズマ源 |
EP2446704B2 (en) * | 2010-05-03 | 2018-10-10 | Goji Limited | Spatially controlled energy delivery |
-
2010
- 2010-10-19 JP JP2010234688A patent/JP2012089334A/ja active Pending
-
2011
- 2011-10-18 CN CN201110316506XA patent/CN102458032A/zh active Pending
- 2011-10-18 TW TW100137616A patent/TW201247035A/zh unknown
- 2011-10-19 US US13/276,642 patent/US20120090782A1/en not_active Abandoned
- 2011-10-19 KR KR1020110106826A patent/KR101289771B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004538367A (ja) | 2001-08-07 | 2004-12-24 | カール−ツアイス−シュティフツンク | 物品をコーティングする装置 |
JP2006310794A (ja) | 2005-03-30 | 2006-11-09 | Tokyo Electron Ltd | プラズマ処理装置と方法 |
WO2008153053A1 (ja) | 2007-06-11 | 2008-12-18 | Tokyo Electron Limited | プラズマ処理装置、給電装置およびプラズマ処理装置の使用方法 |
Also Published As
Publication number | Publication date |
---|---|
CN102458032A (zh) | 2012-05-16 |
KR20120040677A (ko) | 2012-04-27 |
US20120090782A1 (en) | 2012-04-19 |
TW201247035A (en) | 2012-11-16 |
JP2012089334A (ja) | 2012-05-10 |
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