KR101288841B1 - Thin film transistor array substrate and method for fabricating the same - Google Patents

Abstract

The present invention relates to a thin film transistor array substrate having an active layer and a method of manufacturing the same. The disclosed method comprises an insulating substrate having a bottom gate electrode; A gate insulating film formed on the insulating substrate; An active layer formed on the substrate having the gate insulating film so as to cover a portion corresponding to the bottom gate electrode, and formed of an organic-inorganic semiconductor film; A source electrode and a drain electrode formed on the substrate having the active layer; And a pixel electrode electrically connected to the drain electrode.

Description

Thin film transistor array substrate with active layer and manufacturing method therefor {THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD FOR FABRICATING THE SAME}

1 is a plan view showing a typical thin film transistor array substrate.

2 is a cross-sectional view of a thin film transistor array substrate having a bottom gate electrode structure according to a first embodiment of the present invention.

FIG. 3 is a cross-sectional view for each process of fabricating a thin film transistor array substrate having a bottom gate electrode structure according to a first embodiment of the present invention. FIG.

4 is a cross-sectional view of a thin film transistor array substrate having a top gate electrode structure according to a second embodiment of the present invention.

FIG. 5 is a cross-sectional view illustrating a process of fabricating a thin film transistor array substrate having a top gate electrode structure according to a second embodiment of the present invention. FIG.

The present invention relates to a method for manufacturing a liquid crystal display device, and more particularly, to a method for manufacturing a thin film transistor array substrate having an active pattern.

Recently, with the rapid development of the information society, there is a need for a flat panel display having excellent characteristics such as thinning, light weight, and low power consumption, among which a liquid crystal display has a resolution, It is excellent in color display and image quality, and is actively applied to notebooks and desktop monitors.

The liquid crystal display device includes a color filter substrate on which a common electrode is formed, an array substrate on which pixel electrodes are formed, and a liquid crystal layer interposed between the color filter substrate and the array substrate. The liquid crystal display having such a configuration displays an image by driving a liquid crystal layer having optical anisotropy by an electric field generated by applying a voltage to the common electrode and the pixel electrode.

1 is a plan view illustrating a general thin film transistor array substrate.

As shown in FIG. 1, a gate wiring 120 and a data wiring 130 are arranged to be orthogonal to each other in the array substrate 100 for a liquid crystal display device, and a pixel is formed between the gate wiring 120 and the data wiring 130. The area P is defined. The thin film transistor T is positioned at the intersection of the gate line 120 and the data line 130. At one end of each of the gate and data lines 120 and 130, a gate pad G and a data pad D for transmitting an electrical signal to the gate and data lines 120 and 130 are positioned. The gate pad G transmits a scan signal to the gate line 120, and the data pad G transmits an image signal to the data line 130.

The thin film transistor T is connected to the gate line 120 to receive a scanning signal and receives a scanning signal, and a source electrode connected to the data line 130 to receive a video signal. 132 and the drain electrode 134 spaced apart from the source electrode 132 by a predetermined interval. An active pattern 127 is positioned between the gate electrode 122 and the source and drain electrodes 132 and 134.

The pixel electrode 136 is connected to the drain electrode 134 through the contact hole 147 in the pixel region P, and the pixel electrode 136 is formed by a neighboring gate line through which a previous scan signal is transmitted. Extending toward 120).

A plurality of thin film deposition and patterning processes are performed on the array substrate 100 for a liquid crystal display device as described above. For example, the active pattern 127 is formed by depositing a silicon layer by a plasma enhanced chemical vapor deposition (PECVD) method and then patterning the silicon layer using a predetermined mask.

However, in the related art, as a plurality of thin film deposition and patterning processes are performed in forming an active pattern, the process becomes complicated.

In order to solve the above problems, the present invention is to provide a liquid crystal display device and a method of manufacturing the same by using an organic-inorganic semiconductor film as an active pattern to easily form the active pattern without a separate deposition and photo process.

In order to achieve the above object, a liquid crystal display device having an active layer according to the present invention, the insulating substrate having a bottom gate electrode; A gate insulating film formed on the insulating substrate; An active layer formed on the substrate having the gate insulating film and selectively coated to cover a portion corresponding to the bottom gate electrode, the active layer comprising an organic-inorganic semiconductor film; A source electrode and a drain electrode formed on the substrate having the active layer; A passivation layer formed on the substrate having the source electrode and the drain electrode and having a contact hole exposing the drain electrode; A pixel electrode covering the contact hole and electrically connected to the drain electrode.

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In order to achieve the above object, the liquid crystal display device according to the present invention includes an active layer composed of an organic-inorganic semiconductor film. At this time, the active layer composed of the organic-inorganic semiconductor film is applicable to both the bottom gate electrode structure or the top gate electrode structure.

In addition, the manufacturing method of the liquid crystal display device having the above configuration is to prepare an organic-inorganic hybrid semiconductor solution by dispersing a uniform inorganic powder in a liquid organic material, and selectively coating the organic-inorganic hybrid semiconductor solution on a substrate Forming an active layer composed of an organic-inorganic hybrid semiconductor film.

In the method of manufacturing a liquid crystal display device according to the present invention, an organic-inorganic hybrid semiconductor solution in which an inorganic material is dispersed in an organic solution is prepared, a gate insulating film is formed on an entire surface of an insulating substrate having a bottom gate electrode, and the gate insulating film is formed on the gate insulating film. The organic-inorganic hybrid semiconductor solution is selectively coated to cover a portion corresponding to the bottom gate electrode to form an active layer composed of an organic-inorganic hybrid semiconductor film, and source and drain electrodes are formed on the substrate having the active layer. And forming a passivation layer having a contact hole exposing the drain electrode on the source electrode and the drain electrode, and covering the contact hole to form a pixel electrode electrically connected to the drain electrode.

(Example)

Hereinafter, a liquid crystal display having an active layer and a manufacturing method thereof according to the present invention will be described in detail with reference to the accompanying drawings.

2 is a cross-sectional view of a thin film transistor array substrate having a bottom gate electrode structure according to a first embodiment of the present invention.

As shown in FIG. 2, the liquid crystal display device having the bottom gate electrode structure according to the first embodiment of the present invention includes an active layer including an array substrate 200, a bottom gate electrode 202, and an organic-inorganic semiconductor film. 206, a source electrode 208S, a drain electrode 208D, and a pixel electrode 212.

The array substrate 200 may be a glass substrate.

The source electrode 208S and the drain electrode 208D are disposed to be spaced apart by a predetermined interval on the array substrate 200 having the bottom gate electrode 202.

The active layer 206 is composed of an organic-inorganic semiconductor film and is interposed between the source electrode 208S, the drain electrode 208D, and the bottom gate electrode 202. In this case, a gate insulating film 204 is interposed between the active layer 206 and the bottom gate electrode 202 to isolate the active layer 206 from the bottom gate electrode 202.

The pixel electrode 212 is disposed to be electrically connected to the drain electrode 208D. In this case, a passivation layer 210 is interposed between the source electrode 208S, the drain electrode 208D, and the pixel electrode 212. In the passivation layer 210, a contact hole 210H exposing the drain electrode 208D is patterned. Therefore, the drain electrode 208D and the pixel electrode 212 are electrically connected through the contact hole 210H.

3A to 3D are cross-sectional views illustrating processes of fabricating a thin film transistor array substrate having a bottom gate electrode structure according to a first embodiment of the present invention.

A method of manufacturing a thin film transistor array substrate having a bottom gate electrode structure according to a first embodiment of the present invention having the above configuration will be described with reference to FIGS. 3A to 3D.

As shown in FIG. 3A, a substrate 200 having a bottom gate electrode 202 is provided. The bottom gate electrode 202 may be formed by depositing a metal film on the substrate 200 and selectively patterning the metal film.

As shown in FIG. 3B, a gate insulating layer 204 is formed on the substrate 200. Subsequently, the organic-inorganic hybrid semiconductor solution is selectively coated on the substrate having the gate insulating layer 204 to form an active layer 206 composed of an organic-inorganic hybrid semiconductor film. In this case, the organic-inorganic hybrid semiconductor solution means that the inorganic material is dispersed in the organic solution, and not only has the advantages of the organic material but also has the characteristics of taking advantage of the inorganic material having high durability such as light, moisture, and heat. have. Herein, the inorganic material preferably has the form of any one of rod, powder and wire. Thus, the organic-inorganic hybrid semiconductor solution is an inorganic material dispersed in the form of rod, powder or wire in the organic solution.

In addition, the process of coating the organic-inorganic hybrid semiconductor solution is to selectively remain only in the desired area using any one of the slit coating and inkjet coating. That is, the active layer 206 is formed to cover a portion corresponding to the bottom gate electrode selectively without the deposition and photo process by applying the slit coating or inkjet coating method.

Meanwhile, a sintering process (not shown) may be further performed on the substrate having the active layer 206 composed of the organic-inorganic hybrid semiconductor film. Through the sintering process, an organic-inorganic hybrid semiconductor film having a high density of the thin film and a low impurity concentration can be obtained. In this case, the sintering process may use both heat treatment and light treatment, or may use any one of them. Among these, the light treatment uses any one of ultraviolet rays and lasers.

As shown in FIG. 3C, a second metal film is formed on a substrate having the active layer 206, and the second metal film is patterned to form a source electrode 209S and a drain electrode 208D.

As shown in FIG. 3D, the passivation layer 210 is formed on the entire surface of the substrate including the source electrode 208S and the drain electrode 208D. Next, the protective layer 210 is etched to form a contact hole 210H exposing the drain electrode 208D. Then, a transparent conductive film is formed on the entire surface of the substrate having the contact stream 210H. Subsequently, the transparent conductive film is patterned to form a pixel electrode 212 electrically connected to the drain electrode 208D through the contact hole 210H, thereby completing manufacturing of the thin film transistor array substrate.

4 is a cross-sectional view of a liquid crystal display device having a top gate electrode structure according to a second embodiment of the present invention.

As shown in FIG. 4, the liquid crystal display device having the top gate electrode structure according to the second embodiment of the present invention includes an active layer 302 formed on a substrate and composed of an organic-inorganic semiconductor film, and the active layer ( A gate insulating film 304 formed on a substrate having a 302, a top gate electrode 306 formed on the gate insulating film 304, and a gate insulating film formed on a substrate having the top gate electrode 306. A first insulating layer 308 having a first contact hole 308H1 and a second contact hole 308H2 penetrating through the 304 and exposing the active layer 302, respectively, and formed on the first insulating layer 312. And a source electrode covering the first contact hole and the second contact hole, and having a source electrode 310S and a drain electrode 310D connected to the active layer 302, and the source electrode 310S and a drain electrode 310D. A second insulating film 312 having a third contact hole 312H exposing the drain electrode 310D thereon; And a pixel electrode 314 covering the third contact hole 312H and connected to the drain electrode 310D. In this case, the organic-inorganic semiconductor film constituting the active layer 302 is composed of an organic-inorganic hybrid semiconductor solution in which an inorganic material is dispersed in an organic solution. Herein, the inorganic material may have any one of rods, powders, and wires.

5A through 5D are cross-sectional views illustrating processes of manufacturing a liquid crystal display device having a top gate electrode structure according to a second embodiment of the present invention.

As shown in FIG. 5A, an organic-inorganic hybrid semiconductor solution is selectively coated on the substrate 300 to form an active layer 302 composed of an organic-inorganic hybrid semiconductor film. In this case, the organic-inorganic hybrid semiconductor solution is formed by dispersing an inorganic material in an organic solution. In addition, coating the organic-inorganic hybrid semiconductor solution may use any one of a slit coating and an inkjet coating. On the other hand, the active layer 302 may be further subjected to a sintering process on the substrate coated with the organic-inorganic hybrid semiconductor solution. The sintering process uses any one of heat treatment and light treatment, and the light treatment uses any one of ultraviolet and laser.

Next, a gate insulating film 304 is formed on the substrate having the active layer 302.

As shown in FIG. 5B, after forming a first metal film on the gate insulating film 304, the first metal film is patterned to form a top gate electrode 306.

As shown in FIG. 5C, after forming the first insulating layer 308 on the substrate having the top gate electrode 306, the first insulating layer 308 is patterned to expose the active layer 302. Each of the first contact hole 308H1 and the second contact hole 308H2 is formed. Next, a second metal film is formed on the substrate having the first contact hole 308H1 and the second contact hole 308H2. Next, the second metal layer is patterned to cover the first contact hole 308H1 and the second contact hole 308H2 to form a source electrode 310S and a drain electrode 310D connected to the actiation layer 302. .

As shown in FIG. 5D, a second insulating layer 312 is formed on the substrate having the source electrode 310S and the drain electrode 310D. Next, the second insulating layer 312 is patterned to form a third contact hole 312H exposing the drain electrode 310D. Next, after the transparent conductive film is formed on the second insulating film 312, the transparent conductive film is patterned to cover the third contact hole 312H, and the drain electrode 310D forms the pixel electrode 314.

According to the present invention, by using the organic-inorganic semiconductor film as an active pattern, the active pattern can be easily formed without a separate deposition and photo process. That is, since the separate deposition and photo processes can be omitted, not only the process is simplified but also the cost of purchasing expensive PECVD equipment is reduced.

On the other hand, the organic-inorganic semiconductor according to the present invention can be used as a replacement thin film transistor element as well as solar cells and LEDs because the production cost is lower than the conventional amorphous silicon thin film transistor and obtain excellent electrical characteristics. .

Claims (21)

An insulating substrate having a bottom gate electrode; A gate insulating film formed on the insulating substrate; An organic-inorganic hybrid semiconductor solution formed by dispersing an inorganic material in an organic solution is selectively coated on a substrate having the gate insulating layer, wherein the coating area is formed to cover a portion corresponding to the bottom gate electrode. An active layer composed of a semiconductor film; A source electrode and a drain electrode formed on the substrate having the active layer; A passivation layer formed on the substrate having the source electrode and the drain electrode and having a contact hole exposing the drain electrode; And a pixel electrode covering the contact hole and electrically connected to the drain electrode. delete The liquid crystal display device of claim 1, wherein the inorganic material is in the form of any one of a rod, a powder, and a wire. An active layer comprising an organic-inorganic semiconductor film formed by selectively coating an organic-inorganic hybrid semiconductor solution formed by dispersing an inorganic material in an organic solution on a substrate; A gate insulating film formed on the substrate having the active layer; A top gate electrode formed on the gate insulating layer so as to correspond to the active layer; A first insulating layer formed on the substrate having the top gate electrode and having a first contact hole and a second contact hole penetrating the gate insulating film to expose the active layer, respectively; A source electrode and a drain electrode formed on the first insulating layer and covering the first contact hole and the second contact hole and connected to the active layer; A second insulating film having a third contact hole exposing the drain electrode on a substrate having the source electrode and the drain electrode; And a pixel electrode covering the third contact hole and connected to the drain electrode. delete The liquid crystal display device of claim 4, wherein the inorganic material is in the form of any one of a rod, a powder, and a wire. Preparing an organic-inorganic hybrid semiconductor solution formed by dispersing an inorganic material in an organic solution, Forming a gate insulating film on the entire surface of the insulating substrate having a bottom gate electrode, Selectively coating the organic-inorganic hybrid solution on the gate insulating layer, and forming an active layer formed of an organic-inorganic semiconductor layer such that a coating region covers a portion corresponding to the bottom gate electrode, Forming a source electrode and a drain electrode on the substrate having the active layer, Forming a passivation layer having a contact hole exposing the drain electrode on the source electrode and the drain electrode; And forming a pixel electrode covering the contact hole and electrically connected to the drain electrode. delete delete The method of claim 7, wherein the coating of the organic-inorganic hybrid semiconductor solution comprises any one of a slit coating and an inkjet coating. The method of claim 7, wherein the forming of the active layer further comprises sintering the substrate coated with the organic-inorganic hybrid semiconductor solution. 12. The method of claim 11, wherein the sintering step uses any one of heat treatment and light treatment. The method of claim 12, wherein the light treatment uses any one of an ultraviolet ray and a laser. Selectively coating an organic-inorganic hybrid semiconductor solution formed by dispersing an inorganic material in an organic solution on a substrate to form an active layer composed of an organic-inorganic semiconductor film, Interposing a gate insulating film on the substrate having the active layer, and forming a top gate electrode on the gate insulating film to correspond to the active layer; Forming a first insulating layer having a first contact hole and a second contact hole exposing the active layer on a substrate having the top gate electrode, Covering the first contact hole and the second contact hole to form a source electrode and a drain electrode electrically connected to the active layer, Forming a second insulating film having a third contact hole exposing the drain electrode on a substrate having the source electrode and the drain electrode; And forming a pixel electrode electrically covering the third contact hole to electrically connect the drain electrode. delete delete delete 15. The method of claim 14, wherein the coating of the organic-inorganic hybrid semiconductor solution uses any one of a slit coating and an inkjet coating. The method of claim 14, wherein the forming of the active layer further comprises sintering the substrate coated with the organic-inorganic hybrid semiconductor solution. 20. The method of claim 19, wherein the sintering step uses any one of heat treatment and light treatment. 21. The method of claim 20, wherein the light treatment uses any one of an ultraviolet ray and a laser.

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