KR101281342B1 - 발광용품 어레이 및 이의 제조 방법 - Google Patents
발광용품 어레이 및 이의 제조 방법 Download PDFInfo
- Publication number
- KR101281342B1 KR101281342B1 KR1020087014289A KR20087014289A KR101281342B1 KR 101281342 B1 KR101281342 B1 KR 101281342B1 KR 1020087014289 A KR1020087014289 A KR 1020087014289A KR 20087014289 A KR20087014289 A KR 20087014289A KR 101281342 B1 KR101281342 B1 KR 101281342B1
- Authority
- KR
- South Korea
- Prior art keywords
- array
- optical element
- optical
- led die
- optical elements
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title description 21
- 238000003491 array Methods 0.000 title description 4
- 230000003287 optical effect Effects 0.000 claims abstract description 203
- 238000000034 method Methods 0.000 abstract description 53
- 239000000463 material Substances 0.000 description 64
- 230000001681 protective effect Effects 0.000 description 26
- 239000011521 glass Substances 0.000 description 23
- 238000005498 polishing Methods 0.000 description 21
- 230000008569 process Effects 0.000 description 18
- 238000000227 grinding Methods 0.000 description 13
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- 229910003460 diamond Inorganic materials 0.000 description 9
- 239000010432 diamond Substances 0.000 description 9
- 239000003082 abrasive agent Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
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- 229910052594 sapphire Inorganic materials 0.000 description 6
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- 229910010293 ceramic material Inorganic materials 0.000 description 5
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 239000000499 gel Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000012876 carrier material Substances 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
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- 229920002635 polyurethane Polymers 0.000 description 3
- 239000004814 polyurethane Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- 229910021532 Calcite Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
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- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
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- OSGAYBCDTDRGGQ-UHFFFAOYSA-L calcium sulfate Inorganic materials [Ca+2].[O-]S([O-])(=O)=O OSGAYBCDTDRGGQ-UHFFFAOYSA-L 0.000 description 1
- ZOMBKNNSYQHRCA-UHFFFAOYSA-J calcium sulfate hemihydrate Chemical compound O.[Ca+2].[Ca+2].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O ZOMBKNNSYQHRCA-UHFFFAOYSA-J 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
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- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
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- 229920000647 polyepoxide Polymers 0.000 description 1
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- 229920000573 polyethylene Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
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- 239000002243 precursor Substances 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- 239000011318 synthetic pitch Substances 0.000 description 1
- ISXSCDLOGDJUNJ-UHFFFAOYSA-N tert-butyl prop-2-enoate Chemical compound CC(C)(C)OC(=O)C=C ISXSCDLOGDJUNJ-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
- G02B19/0004—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
- G02B19/0028—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed refractive and reflective surfaces, e.g. non-imaging catadioptric systems
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
- G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
- G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
- G02B19/0061—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a LED
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
- G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
- G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
- G02B19/0061—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a LED
- G02B19/0066—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a LED in the form of an LED array
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US73889605P | 2005-11-22 | 2005-11-22 | |
US60/738,896 | 2005-11-22 | ||
PCT/US2006/044777 WO2007061895A1 (fr) | 2005-11-22 | 2006-11-17 | Reseaux d'articles luminescents et procede de fabrication de ceux-ci |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20080069244A KR20080069244A (ko) | 2008-07-25 |
KR101281342B1 true KR101281342B1 (ko) | 2013-07-02 |
Family
ID=38067536
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020087014289A KR101281342B1 (ko) | 2005-11-22 | 2006-11-17 | 발광용품 어레이 및 이의 제조 방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7573073B2 (fr) |
EP (1) | EP1952450A1 (fr) |
KR (1) | KR101281342B1 (fr) |
CN (1) | CN101313417B (fr) |
TW (1) | TW200729560A (fr) |
WO (1) | WO2007061895A1 (fr) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7594845B2 (en) * | 2005-10-20 | 2009-09-29 | 3M Innovative Properties Company | Abrasive article and method of modifying the surface of a workpiece |
WO2008064068A2 (fr) * | 2006-11-17 | 2008-05-29 | 3M Innovative Properties Company | Diode led rendue plane avec extracteur optique |
EP2092576A1 (fr) * | 2006-11-17 | 2009-08-26 | 3M Innovative Properties Company | Composition de liaison optique pour source lumineuse à diodes électroluminescentes |
JP4561732B2 (ja) * | 2006-11-20 | 2010-10-13 | トヨタ自動車株式会社 | 移動体位置測位装置 |
WO2008063884A1 (fr) * | 2006-11-20 | 2008-05-29 | 3M Innovative Properties Company | Composition de liaison optique pour source de lumière del |
US20090050921A1 (en) * | 2007-08-23 | 2009-02-26 | Philips Lumileds Lighting Company Llc | Light Emitting Diode Array |
US20090154137A1 (en) * | 2007-12-14 | 2009-06-18 | Philips Lumileds Lighting Company, Llc | Illumination Device Including Collimating Optics |
US20090166654A1 (en) * | 2007-12-31 | 2009-07-02 | Zhiyin Gan | Light-emitting diode with increased light efficiency |
DE102008035255B4 (de) | 2008-07-29 | 2021-10-07 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements |
US8803967B2 (en) | 2009-07-31 | 2014-08-12 | Mesa Imaging Ag | Time of flight camera with rectangular field of illumination |
TW201137960A (en) * | 2010-04-20 | 2011-11-01 | Raydium Semiconductor Corp | Integrated circuit wafer dicing method |
US8269235B2 (en) * | 2010-04-26 | 2012-09-18 | Koninklijke Philips Electronics N.V. | Lighting system including collimators aligned with light emitting segments |
JP5216113B2 (ja) * | 2011-02-24 | 2013-06-19 | フェニックス電機株式会社 | 発光装置 |
DE102011080179A1 (de) * | 2011-08-01 | 2013-02-07 | Osram Ag | Wellenlängenkonversionskörper und Verfahren zu dessen Herstellung |
WO2013085874A1 (fr) | 2011-12-05 | 2013-06-13 | Cooledge Lighting Inc. | Commande de distribution d'intensité lumineuse à partir d'un réseau de sources de lumière ponctuelles |
US9053952B2 (en) * | 2012-09-28 | 2015-06-09 | Apple Inc. | Silicon shaping |
ITTO20120988A1 (it) | 2012-11-14 | 2014-05-15 | Light In Light S R L | Sistema di illuminazione artificiale per simulare un'illuminazione naturale |
JP6568062B2 (ja) * | 2013-07-18 | 2019-08-28 | ルミレッズ ホールディング ベーフェー | 発光デバイスのウェファのダイシング |
US9451247B2 (en) | 2013-11-25 | 2016-09-20 | Ul Llc | Camera test apparatus |
EP3092522B1 (fr) | 2014-01-08 | 2019-08-14 | Signify Holding B.V. | Sortie de mélange de couleurs pour sources à led à forte luminosité |
CN107342354B (zh) * | 2017-06-28 | 2019-08-20 | 深圳市环基实业有限公司 | 一种ic封装工艺 |
WO2024018291A1 (fr) | 2022-07-22 | 2024-01-25 | Centitvc - Centro De Nanotecnologia E Materiais Técnicos Funcionais E Inteligentes | Panneau en pierre naturelle ayant des propriétés d'éclairage de surface et procédé de fabrication respectif |
EP4310392A1 (fr) | 2022-07-22 | 2024-01-24 | CENTITVC - Centro de Nanotecnologia e Materiais Tecnicos, Funcionais e Inteligentes | Panneau en pierre naturelle ayant des propriétés d'éclairage de surface et procédé de fabrication respectif |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020035819A (ko) * | 2002-04-25 | 2002-05-15 | 주식회사 포스기술 | 방수, 방진 구조를 가진 방열판 겸용 반사면을 구비한발광소자 매트릭스 모듈 및 그 형성방법 |
KR20050061909A (ko) * | 2003-12-19 | 2005-06-23 | 주식회사 코스텍시스 | 전자기기용 발광다이오드 모듈 |
US6942360B2 (en) * | 2003-10-01 | 2005-09-13 | Enertron, Inc. | Methods and apparatus for an LED light engine |
KR20050090928A (ko) * | 2004-03-10 | 2005-09-14 | 서울반도체 주식회사 | 색 필름 및 이를 이용한 발광 다이오드 모듈 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7118438B2 (en) | 2003-01-27 | 2006-10-10 | 3M Innovative Properties Company | Methods of making phosphor based light sources having an interference reflector |
US7070300B2 (en) * | 2004-06-04 | 2006-07-04 | Philips Lumileds Lighting Company, Llc | Remote wavelength conversion in an illumination device |
US20060091412A1 (en) | 2004-10-29 | 2006-05-04 | Wheatley John A | Polarized LED |
US7329982B2 (en) | 2004-10-29 | 2008-02-12 | 3M Innovative Properties Company | LED package with non-bonded optical element |
US7330319B2 (en) | 2004-10-29 | 2008-02-12 | 3M Innovative Properties Company | High brightness LED package with multiple optical elements |
US7404756B2 (en) | 2004-10-29 | 2008-07-29 | 3M Innovative Properties Company | Process for manufacturing optical and semiconductor elements |
US7304425B2 (en) | 2004-10-29 | 2007-12-04 | 3M Innovative Properties Company | High brightness LED package with compound optical element(s) |
US20060091411A1 (en) | 2004-10-29 | 2006-05-04 | Ouderkirk Andrew J | High brightness LED package |
US7169031B1 (en) | 2005-07-28 | 2007-01-30 | 3M Innovative Properties Company | Self-contained conditioning abrasive article |
US7494519B2 (en) | 2005-07-28 | 2009-02-24 | 3M Innovative Properties Company | Abrasive agglomerate polishing method |
US7594845B2 (en) | 2005-10-20 | 2009-09-29 | 3M Innovative Properties Company | Abrasive article and method of modifying the surface of a workpiece |
-
2006
- 2006-11-17 EP EP06837976A patent/EP1952450A1/fr not_active Withdrawn
- 2006-11-17 CN CN2006800436194A patent/CN101313417B/zh not_active Expired - Fee Related
- 2006-11-17 WO PCT/US2006/044777 patent/WO2007061895A1/fr active Application Filing
- 2006-11-17 KR KR1020087014289A patent/KR101281342B1/ko not_active IP Right Cessation
- 2006-11-17 US US11/561,154 patent/US7573073B2/en not_active Expired - Fee Related
- 2006-11-21 TW TW095143046A patent/TW200729560A/zh unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020035819A (ko) * | 2002-04-25 | 2002-05-15 | 주식회사 포스기술 | 방수, 방진 구조를 가진 방열판 겸용 반사면을 구비한발광소자 매트릭스 모듈 및 그 형성방법 |
US6942360B2 (en) * | 2003-10-01 | 2005-09-13 | Enertron, Inc. | Methods and apparatus for an LED light engine |
KR20050061909A (ko) * | 2003-12-19 | 2005-06-23 | 주식회사 코스텍시스 | 전자기기용 발광다이오드 모듈 |
KR20050090928A (ko) * | 2004-03-10 | 2005-09-14 | 서울반도체 주식회사 | 색 필름 및 이를 이용한 발광 다이오드 모듈 |
Also Published As
Publication number | Publication date |
---|---|
US20070176192A1 (en) | 2007-08-02 |
CN101313417B (zh) | 2011-04-20 |
CN101313417A (zh) | 2008-11-26 |
TW200729560A (en) | 2007-08-01 |
WO2007061895A1 (fr) | 2007-05-31 |
EP1952450A1 (fr) | 2008-08-06 |
KR20080069244A (ko) | 2008-07-25 |
US7573073B2 (en) | 2009-08-11 |
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