KR101261908B1 - Dielectric resonator support and method for manufacturing dielectric resonator thereby - Google Patents

Abstract

PURPOSE: A dielectric supporter of a dielectric resonator and a method for manufacturing the dielectric resonator using the same are provided to reduce manufacturing costs by removing a thermosetting dielectric bonding process. CONSTITUTION: A dielectric resonator(200) is composed of a dielectric(210) and a dielectric supporter(220). The dielectric includes a cylindrical structure. The dielectric supporter is combined with the lower side of the dielectric. One end of the dielectric supporter includes a hollow structure. The other end of the dielectric supporter includes a combination hole.

Description

Dielectric support of dielectric resonator and method of manufacturing resonator using same {DIELECTRIC RESONATOR SUPPORT AND METHOD FOR MANUFACTURING DIELECTRIC RESONATOR THEREBY}

The present invention relates to a support for a dielectric resonator, and more particularly, to a dielectric support of a dielectric resonator capable of sintering integrally with a dielectric resonator in a GHz band applied to a satellite relay system or a wireless communication base station relay system, and a method of manufacturing the resonator using the same. It is about.

In general, a band pass filter (BPF) is a passive device that passes only frequency signals of a specific band and attenuates the remaining frequency signals. It is essential to have excellent attenuation characteristics in upper and lower stop bands. to be. For example, the BPF can be implemented as a circuit in which the series circuit and the parallel circuit of the inductor L and the capacitor C are connected in multiple stages. In the case of the most common frequency band, the BPF uses a lumped element type using a common element. do.

However, dielectric resonator type BPF products have been proposed in which a concentrated element type device cannot be used at a high frequency, particularly in a microwave band, and a dielectric is floated in a metal cavity. On the other hand, bandpass filters (BPFs) used after antennas in base stations and repeaters of various mobile communication and wireless communication systems require very low insertion loss characteristics and rapid attenuation in stopbands. BPFs using dielectric resonators have been used to satisfy the BPF specification for base stations and repeaters.

The attached patent documents present a dielectric resonator and its support structure, which will be described in detail with reference to FIG. 1.

As shown, a dielectric resonator type band pass filter (BPF) employing a dielectric support structure is a six-pole BPF, and six cube first to sixth cavities 34a to 34f inside Al or duralumin metal of a cuboid. Each of the cavities 34a to 34f has six high-load nominal quality factors having the first to sixth dielectrics 26a to 26f floated by the support for dielectric support so that the six dielectrics are provided. Form a resonator.

Each dielectric resonator uses a metal support bolt 25 made of Al, duralumin, or the like on the bottom of the body 21 so that both nuts are made of a dielectric having a low loss of dielectric constant such as Teflon, PE, or rexolator. Secure (23). After the dielectrics 26a to 26f are positioned on the upper ends of both nuts 23, the dielectrics 26a to 26f are made by using the dielectric fixing bolts 24a to 24f made of a low loss material having a low dielectric constant similarly to the nuts. The dielectrics 26a to 26f are floated in the center of the cavities 34a to 34f by penetrating and fastening to both nuts 23. In this case, windows (w1 to w5) for transmitting signals are formed between adjacent cavities and cavities.

In addition, the cover 22 coupled to the upper portion of the body 21 is made of brass or invar at a position opposite to the dielectrics 26a to 26f, and a tuning screw 27 having a disc shape at the distal end thereof has a nut 28. It is fixed by. In addition, input and output connectors 30 and 31 are disposed on one side of the body 21, and each is connected to the ground shaft 29a fixed to the side wall through the ground coupling shaft 29.

Both nuts 23 are secured by fixing both nuts 23 of the low dielectric constant for floating the dielectric using the metal support bolts 25 to the bottom surface 21a of the metal body 21 such as Al. It may be structurally stable and firmly fixed to the body 21. That is, since both the support bolt 25 and the body 21 are made of metal, it is possible to continuously maintain a stable coupling relationship with each other. The support bolt 25 is used as a male thread and the cylindrical both nuts 23 having a constant thickness are female threads. Since the fastening is made by using as a solid coupling between the lower surface of both nuts 23 and the body 21.

As a result, as described above, the conventional dielectric resonator floats the dielectric in the center of the cavity by penetrating the dielectric and fastening to both nuts using a dielectric fixing bolt, and the dielectric having a high no-load quality factor in the cavity is supported by the dielectric. It provides a structure floating in the center by the support. The reason why it can be presented as such a structure is that since the method of manufacturing the dielectric and the support for the dielectric is different, the dielectric and the support for the dielectric support are separately produced and then bonded or fastened. That is, since the sintering temperature of the dielectric (resonator frequency: 10 GHz to 13 GHz) is 1300 ° C, but the sintering temperature of the support of the dielectric resonator is 1600 ° C, the assembly process for mutual coupling after production by different processes between the dielectric and the support This is inevitable. Therefore, as in the prior literature, the support for the dielectric and the dielectric support has a problem that the manufacturing cost is very high because the fastening process is added. Moreover, the above-described conventional structure may cause a problem that the characteristics of the resonator due to the fastening structure are deteriorated.

1. Utility Model Registration No. 20-0229889, Republic of Korea, date of registration April 27, 2001, the designation of the dielectric structure of the dielectric resonator

SUMMARY OF THE INVENTION The present invention has been made to solve such a problem, and an object of the present invention is to propose a composition of a dielectric support to form the same sintering temperature of the dielectric ceramic and the dielectric support, whereby the dielectric ceramic and the dielectric support are co-fired at low temperature. LTCC) is possible, in addition to the post-processing of the dielectric support, the dielectric support of the dielectric resonator to reduce the manufacturing cost of the dielectric support by eliminating the thermosetting dielectric bonding process for bonding it to the lower portion of the dielectric ceramic and a method of manufacturing the resonator using the same In providing.

Another object of the present invention is to add the composition of the dielectric support to the FORSTERITE composition by adding a CT-MT composition consisting of barium carbonate (BaCO3), calcium titanium oxide (CaTiO3) and magnesium titanium oxide (MgTiO3) After forming the dielectric support and sintering at 1310 ° C, the dielectric of dielectric resonator can maintain dielectric constant (εr) 10 or less, quality factor (Q * fO) 15000 or more, resonance frequency temperature coefficient (τf) +8 ppm / ° C or less. It is to provide a support and a resonator manufacturing method using the same.

The dielectric support according to the first aspect of the present invention for achieving the above object, in the dielectric support for floating the dielectric of the TE mode dielectric resonator, 30wt% ~ 50wt% forsterite (Mg2SiO4) and 9wt% ~ 11wt 40 wt% to 60 wt% CT-MT composition consisting of% barium carbonate (BaCO 3), calcium titanium oxide (CaTiO 3) and magnesium titanium oxide (MgTiO 3); The CT-MT composition is present in a crystalline phase consisting of 0.915CT (CaTiO3) + 0.085MT (MgTiO3); The dielectric constant (εr) is 10 or less, the quality factor (Q * fO) is 15,000 or more, and the resonance frequency temperature coefficient (τf) is characterized in that it is maintained below +8 ppm / ° C.

In addition, according to a preferred embodiment of the present invention, the forsterite (FORSTERITE: Mg2SiO4) is 50wt%, the barium carbonate (BaCO3) is 10wt%, calcium titanium oxide (CaTiO3) and magnesium titanium oxide (MgTiO3) CT-MT) is 50wt%; The dielectric support is sintered by maintaining for 3 to 4 hours at 1310 ℃ in the electric furnace.

On the other hand, the resonator manufacturing method using a dielectric support according to a second aspect of the present invention for achieving the above object, a) a step of forming a dielectric; b) forming the dielectric support; And c) the dielectric support is seated on the upper surface of the dielectric, and then maintained in an electric furnace for 13 hours to 3 hours to 4 hours for sintering.

Dielectric resonator according to a preferred embodiment of the present invention, is applied to any one of the frequency resonator (Duplexer, DMB / DAB, satellite LNB, oscillator, repeater, bandpass filter (BPF), the resonance frequency is It is characterized in that 4GHz ~ 15GHz.

The dielectric support and the method of manufacturing the resonator using the same according to the present invention, including the post-processing according to the cutting and polishing process of the dielectric support by presenting the composition of the dielectric support to form the same sintering temperature of the dielectric ceramic and the dielectric support, Since the thermosetting dielectric bonding process for bonding the dielectric support to the lower portion of the dielectric ceramic is omitted, the manufacturing cost of the dielectric support can be reduced.

In addition, the composition of the dielectric support according to the present invention is added to the FORSTERITE composition by adding a CT-MT composition composed of barium carbonate (BaCO 3), calcium titanium oxide (CaTiO 3) and magnesium titanium oxide (MgTiO 3). By forming the dielectric support and sintering at 1310 ° C., the electrical properties of the dielectric support are maintained at a dielectric constant (εr) of 10 or less, a quality factor (Q * fO) of 15000 or more, and a resonance frequency temperature coefficient (τf) of +8 ppm / ° C or less. Present the possible effects.

1 is a view for explaining a conventional dielectric resonator.
2 is a perspective view showing a dielectric resonator according to the present invention.
3 is experimental data obtained by measuring the resonance frequency temperature coefficient of the dielectric support according to the present invention.
4 and 5 are experimental data measured electrical properties according to the composition ratio of the CT-MT according to the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

First, the resonator proposed in the present invention is an element for making a high frequency component in an oscillation circuit and using it as a wireless carrier signal. The TE mode (Transverse electric mode), that is, maintaining the magnetic field component (H) of electromagnetic waves and It is used to form electric shear waves by eliminating component (E), and is used in duplexers, DMB / DABs, satellite LNBs, oscillators, repeaters, and bandpass filters.

The resonator is a dielectric resonator, and as shown in FIGS. 2A and 2B, the dielectric resonator 200 includes a dielectric 210 having a cylindrical structure and a dielectric support 220 bonded to a lower portion of the dielectric 210. The dielectric support 220 has a hollow structure, one end of which is open, and is formed to include a coupling hole 221 at the other end. When the dielectric cavity is installed in the housing (not shown), the coupling hole 221 is used to achieve the coupling between the housing and the dielectric resonator using the coupling hole 221.

The dielectric support 220 is fired at the same time during the post-molding firing of the dielectric 210 to have an integrated structure. That is, after the dielectric 210 and the dielectric support 220 are formed in each, the dielectric support 220 is seated on the dielectric 210 and sintered.

In the sintering process as described above, the dielectric support 220 and the dielectric 210 are fused to each other to bond by sintering temperature. Here, the sintering temperature is 1310 ℃, which is fired for 3 to 4 hours in the electric furnace, the dielectric material (210: 4GHz ~ 15GHz) is fired at 1200 ℃ to 1400 ℃, preferably approximately 1300 ℃, the dielectric Support 220 is sintered for 3 to 4 hours in an electric furnace of 1310 ℃. Therefore, through the present invention, it is possible to simultaneously sinter the dielectric 210 and the dielectric support 220.

In the manufacturing process of the dielectric 210, ZnO, Nb 2 O 5, and TiO 2 raw material powder are weighed in a molar ratio of 1: 1: 2, and then ball milled to obtain milled powder. Then, the milled powder is calcined to obtain a primary calcined powder, and then the SnO2 powder is weighed into a molar of 0.003 to 0.03, added to the primary calcined powder, and calcined again to obtain a secondary calcined powder.

Thereafter, a low temperature sintering agent is added to the secondary calcined powder and ball milled to obtain a mixed powder, followed by molding the mixed powder to prepare a molded body. In addition, the molded body is fired at 1200 ° C to 1400 ° C, preferably at about 1300 ° C to prepare the dielectric 210.

Since the dielectric material 210 has densification and dielectric constant and resonant frequency temperature coefficient according to the type and amount of the low temperature sintering agent, the selection of the low temperature sintering agent added is important, and ZnO, Nb2O5, TiO2 and SnO2 raw materials are important. 2 wt% B 2 O 3-2 wt% CuO mixture or 2 wt% B 2 O 3-2 wt% ZnO mixture is added to the powder as a low temperature sintering agent, leading to excellent dielectric constant, quality coefficient and resonance frequency temperature coefficient.

In the process of forming the dielectric 210 as described above, the dielectric support 220 according to the present invention is molded and seated on the upper surface of the dielectric 210. The dielectric is pre-molded before firing the dielectric 210 at 1300 ° C. The support 220 is seated on the upper side of the dielectric 210 and sintered at 1310 ° C. close to the sintering temperature of the dielectric 210. That is, after forming the dielectric 210 and the dielectric support 220, respectively, the dielectric support 220 is seated on the dielectric 210, and then sintered for 3 to 4 hours at 1310 ℃.

As described above, in the sintering process, the dielectric support 220 is fused by the high temperature onto the dielectric 210 so that the dielectric 210 and the dielectric support 220 are integrally sintered.

The dielectric support 220 presented in the present invention is 9wt% ~ 11wt% barium carbonate (BaCO3), calcium titanium oxide (CaTiO3) and magnesium titanium oxide in 30wt% ~ 50wt% forsterite (FORSTERITE: Mg2SiO4) It consists of a 40wt% ~ 60wt% CT-MT composition consisting of (MgTiO3), the CT-MT composition is present in the crystal phase consisting of 0.915CT (CaTiO3) + 0.085MT (MgTiO3). The dielectric support 220 formed as described above maintains a dielectric constant (εr) of 10 or less, a quality factor (Q * fO) of 15000 or more, and a resonance frequency temperature coefficient (τf) of less than +8 ppm / ° C.

3 is experimental data showing the resonant frequency temperature coefficient (τf) according to the composition ratio between barium carbonate (BaCO3) and CT-MT mixed composition in FORSTERITE (Mg2SiO4). In this experiment, forsterite (FORSTERITE: Mg2SiO4) was maintained at 7wt% ~ 63wt%, barium carbonate (BaCO3) was varied from 7wt% to 13wt%, the CT-MT was varied from 30wt% to 80wt%.

Here, the FORSTERITE Mg 2 SiO 4 has excellent sintering characteristics and corrosion resistance, and has a high adhesion strength to an object, and thus does not substantially affect the resonance frequency temperature coefficient τf. Therefore, the purpose of the experiment is to find a good range of the resonant frequency temperature coefficient (τf) within the range of configurable barium carbonate (BaCO3) and CT-MT. That is, the experiment is to find the barium carbonate (BaCO3) and CT-MT composition ratio of the appropriate range by experimenting regardless of the composition ratio of FORSTERITE (Mg2SiO4).

The experiment used 10 specimens for each composition, and the experimental results described only the first digit after the decimal point as an average value. The temperature rising range of the electric furnace was 120 ° C./h and maintained at 1310 ° C. for 3 hours 40 minutes. As described above, the composition of CT-MT is 0.915 CT (CaTiO 3) + 0.085 MT (MgTiO 3). Resonant frequency temperature coefficient (τf) measured after the sintering of the dielectric support 220 as shown in the attached barium carbonate (BaCO3) at 7wt% and 13wt% exceeded 8ppm / ℃ regardless of the composition ratio of the CT-MT, CT When the composition ratio of -MT is 50wt% or more and the barium carbonate (BaCO3) is 8wt% and 12wt%, the resonance frequency temperature coefficient exceeds 8ppm / ℃.

In addition, as can be seen from the experimental results, when the CT-MT is 80wt%, the resonance frequency temperature coefficient (τf) exceeds 8ppm / ° C regardless of the composition ratio of barium carbonate (BaCO3), and the carbonic acid is 70wt% at the CT-MT. Resonant frequency temperature coefficient (τf) exceeded 8 ppm / ° C in all specimens except 10 wt% of barium (BaCO3). At 30 wt% of the CT-MT, many specimens exceeding 8 ppm / ° C. of the resonant frequency temperature coefficient (τf) were found.

The dielectric support 220 proposed in the present invention is a material for floating the dielectric material 210, and since the influence on the dielectric constant and the resonance frequency of the dielectric material 210 should be minimized, the resonance frequency temperature coefficient of the dielectric support material 220 may be reduced. (τf) is preferably minimized. Therefore, as in this experiment, the resonance frequency temperature coefficient τf is minimized, and the composition ratio of the barium carbonate (BaCO 3) is 9wt% to 11wt%, and the composition ratio of the CT-MT is 40wt% to 60wt%. It was recognized. In addition, the composition ratio of the FORSTERITE (FORSTERITE: Mg 2 SiO 4) was found to be 30wt% to 50wt% is appropriate based on this.

On the other hand, the dielectric support 220 according to the present invention, as can be seen as the resonance frequency temperature coefficient (τf) is measured the lowest in the composition ratio of the barium carbonate (BaCO3) 10wt%, the composition ratio of the CT-MT, 50wt%, Preferred embodiments may be envisioned.

In addition, the dielectric support 220 has a change in electrical and physical properties according to the CT-MT composition ratio and the sintering temperature, the dielectric constant and quality factor of the dielectric support 220 serves as an important parameter. This is because the dielectric support 220 is a support for floating the dielectric 210 in the most electrically isolated state, the dielectric constant of the dielectric support 220 is preferably 10 or less. In addition, the quality factor of the dielectric support 220 must be at least 15000 to maintain physical stability.

Therefore, the sintering temperature for improving the electrical and physical properties of the dielectric support 220 should be defined, and the present inventors could recognize the desirable sintering temperature based on the experimental data of FIGS. 4 and 5.

The attached experimental data were tested with four kinds of CT-MT compositions and averaged using 10 specimens in each experiment. The composition ratio of the CT-MT was defined as 'F1B45', 'F1B50', 'F1B55', and 'F1B60', and the 'F1B45' has a composition content of CT-MT of 45wt%, wherein barium carbonate (BaCO3) is 10wt%. . In addition, 'F1B50' is 50wt% of CT-MT, 'F1B55' is 55wt% of CT-MT, and 'F1B60' is 60wt% of CT-MT. Barium carbonate (BaCO 3) is 10 wt%.

The sintering temperature in this experiment was classified into 1300 ℃, 1310 ℃, 1325 ℃, 1335 ℃, 1350 ℃ and 1360 ℃, and sintered for 3 hours 20 minutes from when the temperature of the electric furnace reaches the temperature. The dielectric constant, quality factor and resonance frequency temperature coefficient of each sintering temperature were measured. The dielectric support 220 used in the experiment has a diameter Φ of 1.3 cm to 1.4 cm and a height of 0.8 cm to 0.9 cm.

As can be seen from the experimental data, the dielectric constant (εr) is 10.2, the quality factor (Q * fo) is 21510, and the resonant frequency temperature coefficient (τf) is 7.4 ppm / ℃ when the sintering temperature is 1300 ℃ in F1B45 specimen. Was measured. In the same specimen, when the sintering temperature was 1310 ℃, the dielectric constant (εr) decreased to 10, the quality factor (Q * fo) increased to 27360, and the resonance frequency temperature coefficient (τf) was maintained at 7.4 ppm / ℃. .

In the same specimen, when the sintering temperature was 1325 ° C, the dielectric constant (εr) was 10.7, the quality factor (Q * fo) was increased to 34820, and the resonance frequency temperature coefficient (τf) was maintained at 7.4 ppm / ° C. In the same specimen, when the sintering temperature is 1335 ° C, the dielectric constant (εr) is 10.6, the quality factor (Q * fo) is 36000, and the resonance frequency temperature coefficient (τf) is 7.4 ppm / ° C. On the same specimen, when the sintering temperature was 1350 ℃, the dielectric constant (εr) increased to 10.8, the quality factor (Q * fo) decreased to 32650, and the resonance frequency temperature coefficient (τf) increased to 7.6ppm / ℃. It was. When the sintering temperature was 1360 ° C, the dielectric constant (εr) was the same as 10.8, the quality factor (Q * fo) was reduced to 31270, and the resonance frequency temperature coefficient (τf) was maintained at 7.6 ppm / ° C.

On the other hand, when the composition ratio of F1B50 specimen, that is, CT-MT is 50wt%, the dielectric constant (εr) is 9.5, the quality factor (Q * fo) is 18150, and the resonance frequency temperature coefficient (τf) is 7.3ppm at the sintering temperature of 1300 ° C. It was measured at / ° C. At the sintering temperature of 1310 ° C., the dielectric constant ε r was 9.6, the quality factor Q * fo was 17370, and the resonance frequency temperature coefficient τ f was measured to be 7.3 ppm / ° C. At sintering temperature 1325 ℃, dielectric constant (εr) was 10.7, quality factor (Q * fo) was 28520, resonant frequency temperature coefficient (τf) was maintained at 7.3ppm / ℃, and dielectric constant (εr) was 10.8 at sintering temperature of 1335 ℃. The quality factor (Q * fo) is 27180, and the resonant frequency temperature coefficient (τf) was measured at 7.3 ppm / ° C.

In addition, when the composition ratio of CT-MT is 50wt%, F1B50 specimen has a sintering temperature of 1350 ° C, the dielectric constant (εr) is 11.7, the quality factor (Q * fo) is 31360, and the resonance frequency temperature coefficient (τf) is 7.3 ppm / The dielectric constant (εr) is 11.4, the quality factor (Q * fo) 28490 at the sintering temperature of 1360 ° C, and the resonant frequency temperature coefficient (τf) is 7.3 ppm / ° C.

Based on the same experimental conditions, in the F1B55 specimen, when the sintering temperature is 1300 ℃, the dielectric constant (εr) was measured as 9.1, the quality factor (Q * fo) was 20370, and the resonance frequency temperature coefficient (τf) was measured as 7ppm / ℃. It became. At the sintering temperature of 1310 ° C., the dielectric constant epsilon r was 9.2, the quality factor Q * fo was 17470, and the resonance frequency temperature coefficient f was maintained at 7 ppm / ° C. At the sintering temperature of 1325 ° C, the dielectric constant (εr) is 10.6, the quality factor (Q * fo) is 24637, and the resonance frequency temperature coefficient (τf) is 7 ppm / ° C. At the sintering temperature of 1335 ° C, the dielectric constant (εr) was 10.8, the quality factor (Q * fo) was 25590, and the resonance frequency temperature coefficient (τf) was measured to be 7 ppm / ° C. In the F1B55 specimen, when the sintering temperature is 1350 ° C, the dielectric constant (εr) is 11.4, wherein the quality factor (Q * fo) is 28180, and the resonance frequency temperature coefficient (τf) is 7.1 ppm / ° C. At the sintering temperature of 1360 ° C., the dielectric constant (εr) was measured as 11.8, quality factor (Q * fo) 21670, and resonance frequency temperature coefficient (τf) of 7.1 ppm / ° C.

Finally, in the F1B55 specimen, when the sintering temperature is 1300 ℃, the dielectric constant (εr) is very low to 7.6. At this time, the quality factor (Q * fo) is reduced to 16590, and the resonance frequency temperature coefficient (τf) is 6.9ppm / ℃. It can be seen that the results of all parameters are deteriorated.

At a sintering temperature of 1310 ° C., the dielectric constant ε r is 7.7, the quality factor Q * fo is 15370, and the resonant frequency temperature coefficient τ f is 6.9 ppm / ° C. At the sintering temperature of 1325 ° C, the dielectric constant (εr) is 9.2, the quality factor (Q * fo) is 21210, and the resonance frequency temperature coefficient (τf) is 6.9 ppm / ° C. At the sintering temperature of 1335 ° C, the dielectric constant (εr) was 9.1, the quality factor (Q * fo) was 21810, and the resonance frequency temperature coefficient (τf) was measured at 6.9 ppm / ° C. In the F1B60 specimen, the dielectric constant (εr) increased to 11.7 when the sintering temperature was 1350 ° C, and the quality factor (Q * fo) increased to 23450, and the resonance frequency temperature coefficient (τf) was also 7.1 ppm / ° C. Increased. At the sintering temperature of 1360 ° C., the dielectric constant (εr) was measured as 11.6, quality factor (Q * fo) 35000, and resonance frequency temperature coefficient (τf) of 7.1 ppm / ° C.

Based on the above experimental data, it was found that the sintering temperature satisfying the condition of permittivity (εr) of 10 or less, quality factor (Q * fo) of 15000 or more and resonance frequency temperature coefficient (τf) of 8ppm / ℃ or less was 1310 ° C. At the sintering temperature, all specimens satisfied the electrical properties. Therefore, the dielectric support 220 of the present invention has a composition content of CT-MT of 40wt% to 60wt%, barium carbonate (BaCO3) is 9wt% to 11wt%, the sintering temperature is 1310 ℃ is appropriate Could know.

200: dielectric resonator 210: dielectric
220: dielectric support 221: coupling hole

Claims (7)

A dielectric support for floating a dielectric of a TE mode dielectric resonator,
40wt% ~ 60wt% CT consisting of 30wt% ~ 50wt% forsterite (Mg2SiO4), 9wt% ~ 11wt% barium carbonate (BaCO3), calcium titanium oxide (CaTiO3) and magnesium titanium oxide (MgTiO3) -MT composition;
The CT-MT composition is present in a crystalline phase consisting of 0.915CT (CaTiO3) + 0.085MT (MgTiO3);
Dielectric constant (εr) of 10 or less, quality factor (Q * fO) of 15000 or more, resonant frequency temperature coefficient (τf) of less than +8 ppm / ° C;
The FORSTERITE (Mg2SiO4) is 50wt%, the barium carbonate (BaCO3) is 10wt%, CT-MT consisting of calcium titanium oxide (CaTiO3) and magnesium titanium oxide (MgTiO3) is 50wt% A dielectric support for a dielectric resonator.
delete The method of claim 1,
The dielectric support is a dielectric support of a dielectric resonator, characterized in that the sintered by holding for 3 to 4 hours at 1310 ℃ in the electric furnace. The method of claim 1,
The dielectric is a dielectric support of a dielectric resonator, characterized in that applied to any one of the frequency resonator (Duplexer, DMB / DAB, satellite LNB, oscillator, repeater, bandpass filter (BPF). The method of claim 4, wherein
The frequency support is a dielectric support of the dielectric resonator, characterized in that 4GHz ~ 15GHz. In the method of manufacturing a dielectric resonator using the dielectric support according to claim 1,
a) forming a dielectric;
b) forming the dielectric support; And
c) a method of manufacturing a resonator using a dielectric support of a dielectric resonator, characterized in that the dielectric support is seated on the upper surface of the dielectric, and then maintained in an electric furnace for 3 to 4 hours at 1310 ° C. The method according to claim 6,
The dielectric resonator is applied to any one of a frequency resonator among a duplexer, a DMB / DAB, a satellite LNB, an oscillator, a repeater, and a band pass filter (BPF), and the resonant frequency is 4 GHz to 15 GHz. Resonator manufacturing method using dielectric support of dielectric resonator.

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