KR101255524B1 - Sputtering equipment for thin film deposition and composition investigation - Google Patents

Abstract

The present invention relates to a sputtering apparatus. The present invention is the main chamber; A substrate holder installed in the main chamber and having a substrate fixed thereto; A plurality of sputter guns installed in the main chamber and mounted with a target; A shutter assembly installed inside the main chamber and including a shutter to prevent contamination of a target during pre-sputtering; Distance adjusting means for moving the sputter gun so that the distance between the sputter gun and the substrate can be adjusted; And a pollution prevention shield chamber installed at the front end of the sputter gun to embed the front end of the sputter gun and the shutter of the shutter assembly, and the entrance / exit of which the shutter enters and exits is provided. The sputtering apparatus according to the present invention not only functions as a thin film forming apparatus but also can be used as an apparatus capable of searching for a composition in a short time. In addition, cross contamination between targets can be minimized during pre-sputtering.

Description

Sputtering equipment for thin film deposition and composition exploration {SPUTTERING EQUIPMENT FOR THIN FILM DEPOSITION AND COMPOSITION INVESTIGATION}

The present invention relates to a sputtering apparatus, and more particularly, to a sputtering apparatus capable of searching for a composition in a short time and minimizing mutual contamination between targets.

As the electrode material or dielectric material such as various electric / electronic devices and optical devices, a metal oxide thin film such as a multicomponent system, for example, a two component system or a three component system is used. For example, thin films such as indium-tin oxide (ITO) or aluminum-zinc oxide (AZO) are mainly used as electrode materials (transparent electrodes), and Pb (Zr _x Ti _{1 -x} ) O ₃ or (Ba _x Sr Thin films such as _{1- x} ) TiO ₃ are mainly used as dielectric materials. In this case, the metal oxide thin film may vary in characteristics depending on the composition (stoichiometric ratio) of the metal elements constituting the same, and may have excellent properties when optimally formed.

In general, in developing a new composition thin film having excellent characteristics, the optimum bulk composition is searched through a powder-bulk process, and then the bulk composition is used as a target. A thin film is deposited by using a vacuum device such as sputtering or pulsed laser deposition (PLD). At this time, the powder-bulk process for the optimum composition search proceeds as follows.

For example, in order to search for an optimal composition of a compound consisting of metal A and metal B, first, each compound of A and B is separated by 20 mole%, that is, in the composition formula of A _(1-x) B _x , x = 0, 0.2, Six batches of 0.4, 0.6, 0.8 and 1.0 are obtained. Or by further subdividing 11 batches at 10 mole% intervals for stoichiometric measurements. Each batch is pulverized and mixed with a solvent and zirconia balls in a ball jar, dried in an oven and pulverized in a mortar to be atomized. Then, the fine powder is calcined in a high temperature furnace (furnace), and then dried and pulverized again through a regrinding and milling process, and then molded to a certain shape and then sintered at a high temperature. Next, the sintered specimen is mirror-hardened using a polishing pad such as silicon carbide (SiC) using a hand or a lapping machine, and then an electrode such as silver is printed and After sintering in the furnace, the electrical properties are measured to find the optimum composition with good properties.

However, the above composition search method takes at least about 10 days to go through each process. In addition, considering process variables such as the time required for calcination and sintering, it usually takes about three months to explore a composition. In addition, the number of the composition to be searched is limited to 6 to up to 11 compositions, although not only the required time but also excellent characteristics, overlooking and passing compositions may occur. That is, for example, in the case of x = 0.45 in the A _(1-x) B _x , there is a problem that is overlooked despite having excellent characteristics.

On the other hand, after obtaining the optimum target through the powder-bulk process (powder-bulk process) as described above, using a sputtering apparatus or the like as described above, the target is sputtered on the substrate to form a thin film. .

Generally, a sputtering apparatus comprises a vacuum chamber; A substrate holder installed in the chamber and having a substrate fixed thereto; It is installed inside the chamber, and includes a sputter gun (sputter gun) on which the target is mounted. At this time, a plurality of targets are formed so that two or more metal oxides are deposited. That is, a plurality of sputter guns are installed in the chamber in a direction perpendicular to the substrate, and targets having different compositions are mounted and sputtered on the respective sputter guns. For example, Korean Patent Publication No. 10-2001-0098215 discloses a target facing sputtering apparatus including two sputter guns.

In addition, when the sputtering apparatus is equipped with a plurality of targets as described above, a shutter assembly for preventing contamination of the relative target is installed at the front end of the sputter gun. That is, when depositing a bicomponent or tricomponent thin film, pre-sputtering (pre-sputtering) to remove the relative target material deposited on the surface of each target prior to the main sputtering for the actual thin film deposition. -sputtering), in which the material of the target is deposited and contamination of the target occurs. To prevent this, the shutter is blocked with pre-sputtering so that the relative target material is not deposited.

1 shows a cross-sectional configuration diagram of a sputtering apparatus according to the prior art, in which a rotary shutter 30 is provided. As shown in FIG. 1, the shutter 30 includes disc-shaped shutter plates 32 and 34 having openings 32a and 34a, and a rotating shaft 36 for rotating the shutter plates 32 and 34. Have

At this time, the target (first target) to be pre-sputtered coincides with the openings 32a and 34a, and the relative targets (such as the second and third targets) are formed at portions where the openings 32a and 34a are not formed. In accordance with this, it is possible to prevent contamination of the relative target (the second, the third target, and the like) during the pre-sputtering of the first target. And alternately through rotation to pre-sputter the second and third targets and the like. In Fig. 1, reference numeral 11 denotes a vacuum chamber, 22 a substrate, 40 a sputter gun, and 43 a target. Although not shown in FIG. 1, a plurality of sputter guns 40 on which the target 43 is mounted are installed in the vacuum chamber 11.

Japanese Unexamined Patent Application Publication No. 2005-256112 and Korean Unexamined Patent Publication No. 10-2010-0093495 disclose a sputtering apparatus including a shutter 30 having a rotary structure as described above.

However, the conventional sputtering apparatus as described above can deposit only a specific composition determined according to the composition of the target. That is, the conventional sputtering apparatus only functions as a thin film forming apparatus, and is difficult to be used as a means for composition search.

In addition, as described above, when pre-sputtering, the shutter 30 is blocked to prevent contamination of the relative target, but there is a problem that contamination still occurs due to the inevitable gap between the target and the shutter 30. Specifically, to generate a plasma to maintain a certain distance between the target and the shutter 30, the plasma generated from the target target penetrates into the gap formed by the gap to cause contamination.

In addition, the shutter 30 constituting the conventional sputtering apparatus has a rotary structure as described above, which has a problem of occupying a lot of space in the chamber.

[Previous Patent Document 1] Republic of Korea Patent Publication No. 10-2001-0098215

[Patent Document 2] Japanese Unexamined Patent Publication No. 2005-256112

[Previous Patent Document 3] Republic of Korea Patent Publication No. 10-2010-0093495

Accordingly, an object of the present invention is to provide a sputtering apparatus capable of searching almost all compositions in a short time without a composition that is overlooked in the search for a composition, and minimizing mutual contamination between targets during pre-sputtering.

In addition, an object of the present invention is to provide a sputtering device that increases the space utilization in the chamber through the structural improvement of the shutter.

The present invention to achieve the above object,

Main chamber;

A substrate holder installed in the main chamber and having a substrate fixed thereto;

A plurality of sputter guns installed in the main chamber and mounted with a target;

A shutter assembly installed inside the main chamber and including a shutter to prevent contamination of a target during pre-sputtering;

Distance adjusting means for moving the sputter gun so that the distance between the sputter gun and the substrate can be adjusted; And

The sputtering device is installed at the front end of the sputter gun to embed the front end of the sputter gun and the shutter of the shutter assembly, and provides a sputtering apparatus including an anti-fouling shield chamber in which the shutter enters and exits.

At this time, the shutter assembly, the shutter through the inside and outside of the pollution prevention shield chamber; And linear moving means for moving the shutter in a straight line, and the shutter is preferably moved in a straight line.

In addition, the sputtering apparatus according to the present invention may further include a gas injection line for injecting gas into the pollution prevention shield chamber.

The sputtering apparatus according to the present invention not only functions as a thin film forming apparatus but also can be used as an apparatus for composition search. Specifically, the present invention can be used as a composition search device capable of searching almost all compositions in a short time without a composition that is overlooked by the distance adjusting means for moving each sputter gun. In addition, the anti-contamination shield chamber installed at the front end of each sputter gun can minimize cross contamination between targets during pre-sputtering. In addition, the shutter moves in a straight line to minimize the volume, thereby increasing space utilization in the chamber.

1 is a cross-sectional configuration diagram of a sputtering apparatus according to the prior art.
2 is a side configuration diagram of a sputtering apparatus according to an embodiment of the present invention.
3 is a plan view illustrating a sputtering apparatus according to an embodiment of the present invention.
4 is a sectional view of principal parts of a sputtering apparatus according to an embodiment of the present invention.
5 is an essential part perspective view of a sputtering apparatus according to an embodiment of the present invention.

Hereinafter, with reference to the accompanying drawings will be described in detail the present invention. The accompanying drawings show exemplary embodiments of the present invention, which are provided merely to assist in understanding the present invention, and thus the technical scope of the present invention is not limited thereto.

2 is a side configuration diagram of a sputtering apparatus according to an embodiment of the present invention, Figure 3 is a plan view of a sputtering apparatus according to an embodiment of the present invention. 4 is a cross-sectional view of main parts of a sputtering apparatus according to an exemplary embodiment of the present invention, and FIG. 5 is a perspective view of main parts of the sputtering apparatus according to an exemplary embodiment of the present invention.

First, referring to FIGS. 2 to 4, the sputtering apparatus according to the present invention includes a main chamber 100, a substrate holder 200, a sputter gun 300, and a sputter gun Shield chamber 600 to minimize contamination of target T during distance adjustment means 400, shutter assembly 500, and pre-sputtering for moving 300. ).

The structure and shape of the main chamber 100 is not limited. The main chamber 100 has a structure as usual, which maintains a vacuum during sputtering. The main chamber 100 may have a shape such as a cylindrical shape or a polygonal shape (for example, a square shape). In the accompanying drawings, a cylindrical main chamber 100 is illustrated.

In addition, a gas inlet 120 and a gas outlet 140 may be optionally formed in the main chamber 100. The gas inlet 120 and the gas outlet 140 may be formed in the wall 110 of the main chamber 100. At this time, the gas flowing into the gas inlet 120 is not limited. The gas introduced through the gas inlet 120 may include at least a plasma gas used for sputtering. At least one selected from, for example, nitrogen, oxygen, and argon may be introduced into the main chamber 100. And these gases are discharged to the outside through the gas outlet 140 after being used for deposition. In addition, the main chamber 100 may be connected to a vacuum pump (not shown) for maintaining a vacuum. The vacuum pump may be connected to the gas outlet 140 or may be connected to an inlet (not shown) formed separately in the main chamber 100 to maintain the inside of the main chamber 100 in a vacuum.

The substrate holder 200 is not limited as long as it can fix one or more substrates (S). The substrate holder 200 may have a structure as usual. In addition, the installation position of the substrate holder 200 is not limited. The substrate holder 200 may be installed inside the main chamber 100, and may be installed above or below the main chamber 100. In the figure illustrates a state installed in the lower portion of the main chamber 100.

The substrate holder 200 may include a fixing plate 220 to which the substrate S is fixed, and a support member 240 supporting the fixing plate 220. In this case, the support member 240 may have a structure capable of rotating the fixing plate 220 as usual. The support member 240 may be rotated by, for example, a power transmission means such as a motor. In addition, the support member 240 may have a structure that can adjust the height by moving the fixing plate 220 up and down as usual.

The sputter gun 300 is equipped with a target (T). The sputter gun 300 is not limited as long as the target T is mounted and can be sputtered. The sputter gun 300 may have a structure as usual. Sputter gun 300 may include, for example, a cathode 320. In this case, the cathode 320 includes a support plate (not shown) to which the target T is fixed as usual, and a magnetron electrode installed at the rear of the support plate and including a magnet to generate plasma. It may have a structure capable of sputtering the target (T) through.

According to a preferred embodiment, the sputter gun 300 may include a cathode 320 on which the target T is mounted, and a cathode shield 340 formed around the cathode 320. The cathode shield 340 protects the cathode 320. The cathode shield 340 may have a structure in which the cathode 320 may be embedded, and may have, for example, a hollow shape such as a cylindrical shape or a polygonal shape.

The sputter gun 300 is a plurality. Specifically, the sputtering apparatus according to the present invention includes a plurality of sputter guns 300. At least two sputter guns 300 are installed. Although not particularly limited, in the sputtering apparatus according to the present invention, for example, two to five sputter guns 300 may be installed. As shown in FIG. 3, three sputter guns 300 may be installed in the main chamber 100 at predetermined intervals. At this time, each sputter gun 300 is mounted with a target (T) of a different material.

In addition, the sputter gun 300 may be installed to face each other by maintaining the substrate S and 180 degrees, in this case, since it may damage the substrate S during sputtering, preferably shown in FIG. As described above, the substrate S and the off-axis array structure may be provided. That is, the sputter gun 300 is not opposed to face the substrate S, but is preferably provided in an off-axis array structure at an angle of 90 degrees.

The distance adjusting means 400 moves the sputter gun 300. Specifically, the distance adjusting means 400 moves the sputter gun 300 so that the distance between the sputter gun 300 and the substrate S can be adjusted. The distance adjusting means 400 preferably moves the sputter gun 300 in the horizontal direction, that is, in the left and right directions in the drawing. The distance adjusting means 400 corresponds to the number of the sputter gun 300 as a plurality. For example, when three sputter guns 300 are installed in the sputtering apparatus according to the present invention, three distance adjusting means 400 are also installed. That is, the distance adjusting means 400 is connected to each sputter gun 300, and each sputter gun 300 is independently moved through the distance adjusting means 400.

The distance adjusting means 400 may move the sputter gun 300 in the horizontal direction (left and right directions) to adjust the distance between the sputter gun 300 and the substrate S, that is, the target T and the substrate S. FIG. If present, it is not limited.

The distance adjusting means 400 is preferably a connecting bar 410 connected to the sputter gun 300 and a moving member 420 for moving the connecting bar 410 in a horizontal direction (left and right directions). moving member). At this time, one side of the connection bar 410 is connected to the cathode 320 of the sputter gun 300, the other side is connected to the moving member 420, the sputter gun 300 by the driving of the moving member 420 Move left and right Accordingly, the distance between the sputter gun 300 and the substrate S, that is, the target T and the substrate S is adjusted.

The moving member 420 is not limited as long as the connecting bar 410 moves in the horizontal direction (left and right directions). Although not specifically illustrated in the drawings, the moving member 420 may use a conventional actuator used to move any member in a horizontal or vertical direction in a general mechanical apparatus. The moving member 420 is an electric, hydraulic or pneumatically actuated actuator. The moving member 420 may be an electric, hydraulic, or pneumatic cylinder operated by a hydraulic or pneumatic actuator. Can be selected. And the operation of this actuator, that is, the moving member 420 can be controlled by the controller.

In addition, as shown in the figure, the distance adjusting means 400 may further include a support 430 for supporting the connection bar 410. At this time, as shown in the figure, one end of the cathode shield 340 may be coupled to the support 430 to be configured to enable the vacuum of the main chamber 100. In addition, the moving member 420 is installed outside the main chamber 100, the support 430 is in close contact with the wall 110 of the main chamber 100 or spaced apart from the wall 110 by a predetermined interval Can be.

Therefore, each sputter gun 300 is moved independently by the distance adjusting means 400 as described above to adjust the distance to the substrate (S). Accordingly, the sputtering apparatus according to the present invention may not only be used as a device for thin film formation (deposition), but also as a device for composition search by adjusting a distance to the substrate S through the distance adjusting means 400. Can be used.

Specifically, the sputtering apparatus according to the present invention can implement a continuous composition diffusion method. In the present invention, the "continuous composition diffusion method" means a method of searching for a composition within a short time by depositing a thin film having a different composition continuously according to the position of the substrate S on one substrate (S). According to the present invention, by controlling the distance between each sputter gun 300 and the substrate (S), it is possible to simultaneously search for the optimum composition within a short time by depositing thin films having various compositions on one substrate (S) at the same time. Continuous composition diffusion can be implemented.

For example, a process of searching for an optimal composition of an ITO (indium-tin oxide) thin film as a two-component metal oxide thin film will be described below.

Two sputter guns 300 are used, the first sputter gun 300 is equipped with a target T of In ₂ O ₃ material, and the second sputter gun 300 is a target of Sn ₂ O ₃ material T ) Is sputtered on one substrate S at the same time. At this time, the indium (In) and tin (Sn) according to the position of the substrate (S) by sputtering while moving the first sputter gun 300 and the second sputter gun 300 independently through each distance adjusting means 400 The mole fraction of can vary. As the distance from the substrate S increases, the mole fraction of the target T material increases. That is, the closer the first sputter gun 300 is to the sputter gun 300 than the second sputter gun 300 at the distance between the sputter gun 300 and the substrate S, the greater the mole fraction of indium (In) on the substrate S at the position.

As described above, by depositing continuously while moving each sputter gun 300 through the distance adjusting means 400, a thin film having almost any composition can be deposited within a short time without being overlooked on one substrate (S). . In addition, by forming an electrode (eg, an Ag electrode) at each position of the substrate S and evaluating characteristics, an optimal composition having excellent characteristics can be searched for in a short time. In addition, the thickness of the thin film deposited by controlling the distance to the substrate (S) can be adjusted.

Meanwhile, the shutter assembly 500 prevents mutual contamination between targets T during pre-sputtering. The shutter assembly 500 is installed inside the main chamber 100. In this case, the shutter assembly 500 includes a shutter 520 positioned at the front end of the sputter gun 300, that is, at the front end of the target T during pre-sputtering. The shutter 520 blocks the contaminants generated during the pre-sputtering of the relative target T to prevent contamination of the target T.

The plurality of shutter assemblies 500 correspond to the number of sputter guns 300. For example, when three sputter guns 300 are installed in the sputtering apparatus according to the present invention, three shutter assemblies 500 are also installed. That is, the shutter 520 is installed for each sputter gun 300 to prevent contamination between the targets T during pre-sputtering. The preferred configuration of this shutter assembly 500 is described below.

The pollution prevention shield chamber 600 is installed at the front end of the sputter gun 300. The anti-fouling shield chamber 600 may correspond to the number of sputter guns 300 as a plurality. For example, when three sputter guns 300 are installed in the sputtering apparatus according to the present invention, three anti-contamination shield chambers 600 are also installed. That is, the pollution prevention shield chamber 600 is installed independently for each sputter gun 300.

As described above, the contamination between the targets T may be prevented by blocking the shutter 520 during pre-sputtering. However, only blocking the shutter 520 does not completely prevent contamination between the targets T. Specifically, a gap D (see FIGS. 2 and 4) is inevitably formed between the target T and the shutter 520, and the deposition material of the relative target T is introduced into the gap D so that the target ( Contaminate T). In this case, the anti-contamination shield chamber 600 prevents the deposition material from flowing through the gap D during pre-sputtering to minimize contamination of the target T.

As shown in the figure, the anti-fouling shield chamber 600 is installed at the front end of each sputter gun 300, the front end of each sputter gun 300 and the shutter 520 of the shutter assembly 500 Built in. That is, the pollution prevention shield chamber 600 shields the periphery between the target T and the shutter 520, that is, shields around the gap D, so that the deposition material flows through the gap D during pre-sputtering. Prevent it. Accordingly, contamination of the relative target T can be minimized.

The anti-fouling shield chamber 600 includes a front end of each sputter gun 300 and a shutter 520 to shield the periphery between the target T and the shutter 520 (that is, around the gap D). Any structure that can be used is not limited. The anti-fouling shield chamber 600 may be composed of, for example, a hollow member 620, for example, a hollow member 620, such as a cylindrical or polygonal cylinder, as shown in the figure. The front end of each sputter gun 300 and the shutter 520 is embedded in the hollow member 620 as described above. 5, an exemplary embodiment of an antifouling shield chamber 600 is shown.

In addition, as described below, the shutter 520 is preferably moved in a straight line, in this case, the pollution prevention shield chamber 600 has a structure in which the entrance portion 640 is formed to allow the shutter 520 to enter and exit. Has Specifically, the anti-fouling shield chamber 600 includes a hollow member 620 such as a cylindrical or polygonal cylindrical shape, and an entrance portion 640 formed in the hollow member 620 and into which the shutter 520 enters and exits. In this case, the access part 640 may be formed by partially cutting the hollow member 620. The size of the entrance and exit portion 640 is not particularly limited, and the shutter 520 may be freely moved in and out.

In addition, the anti-fouling shield chamber 600 may be coupled to the wall 110 of the main chamber 100. That is, one side of the hollow member 620 may be coupled to and supported by the wall 110 of the main chamber 100. In addition, the anti-fouling shield chamber 600 may be formed integrally extending from the cathode shield 340. In addition, as illustrated in FIG. 5, the antifouling shield chamber 600 may have a double layer structure.

For example, in the case of depositing a three-component metal oxide thin film, three targets (first target, second target, and third target) made of different materials are mounted on each sputter gun 300 to pre-sputter. The process is as follows.

First, during pre-sputtering of the first target, the relative targets (the second target and the third target) are blocked by the shutters 520. In this case, the relative targets (the second target and the third target) are blocked by the shutters 520 and the pollution prevention shield chamber 600, so that the deposition material (pollutant) of the first target does not flow. Next, during pre-sputtering of the second target, the shutter 520 corresponding to the second target is opened, and the shutters 520 corresponding to the relative targets (the first target and the third target) are closed to close each pollution prevention shield chamber. The shielding structure is formed with the 600 and sputtered. The same applies to the pre-sputtering of the third target. Therefore, during pre-sputtering of the target T, the relative target T is shielded by the antifouling shield chamber 600 to minimize contamination.

Meanwhile, as described above, the shutter assembly 500 includes at least a shutter 520 positioned at the front end portion of the target T during pre-sputtering, wherein the shutter 520 is a preferred embodiment of the present invention. It is good to move in a straight line according to. 5, an exemplary embodiment of a shutter assembly 500 is shown.

Specifically, the shutter assembly 500 preferably includes a shutter 520 and linear moving means 540 for moving the shutter 520 in a straight line. At this time, the shutter 520 is moved by the linear moving means 540 to enter and exit the inside of the pollution prevention shield chamber 600. That is, the shutter 520 moves in a straight line to travel in and out of the entrance 640 of the pollution prevention shield chamber 600.

The shape of the shutter 520 is not limited. The shutter 520 may have, for example, a disk shape or a polygonal plate shape. The shutter 520 preferably corresponds to the cross-sectional shape of the antifouling shield chamber 600. For example, when the antifouling shield chamber 600, that is, the hollow member 620 is cylindrical, the shutter 520 has a disk shape corresponding to the hollow member 620. In addition, the shutter 520 may have an outer diameter that is approximately equal to or slightly smaller than the inner diameter of the hollow member 620.

The linear moving means 540 is not limited as long as the linear movement of the shutter 520 is performed. The shutter 520 may move in the vertical direction (up and down direction) or the horizontal direction (left and right direction) through the linear moving means 540, and as shown in FIGS. 2 and 4, preferably in the vertical direction (up and down direction). Move to). The linear movement means 540 has a reciprocating rod 542 coupled to the shutter 520, a support member 544 supporting the reciprocating rod 542, and the reciprocating rod 542 is straight according to a specific embodiment. It may include a linear moving member 546 to move to.

In this case, although the linear moving member 546 is not specifically illustrated in the drawings, the linear moving member 546 is used in a general mechanical apparatus, and may use an actuator as described above. Specifically, the linear moving member 546 is an electric, hydraulic or pneumatically actuated actuator, which may be selected from an electric motor electrically operated or a hydraulic / pneumatic cylinder operated by hydraulic or pneumatically. Can be. The operation of this actuator, ie linear moving member 546, can be controlled by a controller. 5 illustrates an electric motor as the linear moving member 546.

In addition, the support member 544 may support the reciprocating rod 542 so that the reciprocating rod 542 can be stably moved under the power of the linear moving member 546. The support member 544 may include, for example, two support plates 544a and 544b and one or more coupling bars 544c for coupling the two support plates 544a and 544b. The support plates 544a and 544b may have a structure in which a through hole through which the reciprocating rod 542 enters and exits is formed.

According to the present invention, since the shutter 520 has a structure moving in a straight line as described above, the volume of the shutter assembly 500 is minimized. Specifically, as shown in FIG. 1, the conventional rotary structure occupies a lot of space in the chamber 11. However, as shown in FIG. 2, when the shutter 520 moves in a straight line (up and down direction) as described above, the volume occupied by the shutter assembly 500 is minimized. Accordingly, space utilization in the main chamber 100 may be increased.

In addition, the substrate S may be contaminated during pre-sputtering, and a blocking film (not shown) may be installed to prevent this. That is, another sputtering apparatus according to the present invention may further include a blocking film. The blocking film is positioned on the substrate S during pre-sputtering to prevent deposition on the substrate S (pollution prevention), and at the top of the substrate S during main sputtering for depositing a substantial thin film. Removed. The blocking film may be installed or removed on the substrate S by the rotary structure. The blocking film is preferably configured to move in a straight line like the shutter assembly 500, to block the upper portion of the substrate S during pre-sputtering, and to block the upper portion of the substrate S during the main sputtering. Can be removed.

In addition, according to a preferred embodiment, the sputtering apparatus according to the present invention may further include a gas inlet line 700 for injecting gas into the pollution prevention shield chamber 600. A plurality of gas injection lines 700 correspond to the number of anti-contamination shield chambers 600. That is, the gas injection line 700 injects gas into each pollution prevention shield chamber 600.

When the gas injection line 700 is supplied with gas from the outside, the gas injection line 700 may inject gas into each of the pollution prevention shield chambers 600. The gas injection line 700 may be composed of, for example, a metal pipe. As illustrated in FIG. 4, the end of the gas injection line 700 is positioned in front of the target T through the entrance 640 to inject gas into the pollution prevention shield chamber 600. have. The gas injected through the gas injection line 700 is a gas used for sputtering, and may be, for example, one or more selected from nitrogen, oxygen, and argon.

As described above, when gas is injected into each pollution prevention shield chamber 600 through the gas injection line 700, stable plasma may be induced to increase sputtering efficiency. That is, the gas is also supplied through the inlet 120 of the main chamber 100, but the gas is supplied at a distance close to each sputter gun 300 through the gas injection line 700 to induce stable plasma.

As described above, the sputtering apparatus according to the present invention may be used as a deposition apparatus for forming a substantially thin film, and the distance between the sputter gun 300 and the substrate S is adjusted through the distance adjusting means 400. Since a thin film having various compositions can be formed on one substrate S, it can be used as a composition search device. And almost any composition can be explored quickly without overlooking the composition.

In addition, as described above, a shielding structure is formed by the anti-contamination shield chamber 600 during pre-sputtering, thereby minimizing mutual contamination between the targets T. In addition, since the shutter assembly 500 has a structure moving in a straight line, the volume is minimized. A volume of about 70% can be reduced compared to conventional rotary structures. Accordingly, the space utilization in the main chamber 100 is increased, and there is an advantage that the angle of the shutter 520 does not change easily when repeated opening and closing. In addition, according to the present invention, when a gas is injected into each pollution prevention shield chamber 600 through the gas injection line 700, a stable plasma is induced to increase the sputtering efficiency.

100: main chamber 200: substrate holder
300: sputter gun 320: cathode
400: distance control means 410: connection bar
420: moving member 430: support
500: shutter assembly 520: shutter
540: linear movement means 542: reciprocating rod
544: support member 546: linear moving member
600: pollution prevention shield chamber 640: entrance
700: gas injection line
T: Target S: Substrate

Claims (4)

Main chamber 100;
A substrate holder 200 installed in the main chamber 100 and having a substrate S fixed thereto;
A plurality of sputter guns 300 installed inside the main chamber 100 and mounted with a target T;
A shutter assembly (500) installed in the main chamber (100) and including a shutter (520) for preventing contamination of the target (T) during pre-sputtering;
Distance adjusting means (400) for moving the sputter gun (300) to enable distance adjustment of the sputter gun (300) and the substrate (S); And
Including a pollution prevention shield chamber 600 installed at the front end of the sputter gun 300,
The sputter gun 300 includes a cathode 320 on which the target T is mounted; A cathode shield 340 formed around the cathode 320,
The pollution prevention shield chamber 600 is installed at the front end of the sputter gun 300, the hollow member 620 to accommodate the front end of the sputter gun 300 and the shutter 520 of the shutter assembly 500. )Wow; Is formed in the hollow member 620, and includes an entrance portion 640, the shutter 520 is entered and exited,
The shutter assembly 500 includes: a shutter 520 for entering and exiting the inside of the anti-fouling shield chamber 600 through the entrance 640; And a linear moving means (540) for moving the shutter (520) in a straight line.
delete The method of claim 1,
The linear movement means 540,
A reciprocating rod 542 coupled to the shutter 520;
A support member 544 for supporting the reciprocating rod 542; And
And a linear moving member (546) to cause the reciprocating rod (542) to move in a straight line.
The method of claim 1,
The sputtering apparatus, the sputtering apparatus further comprises a gas injection line (700) for injecting gas into the pollution prevention shield chamber (600).

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