KR101243284B1 - low temperature thin film deposition mathod using plasma - Google Patents
low temperature thin film deposition mathod using plasma Download PDFInfo
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- KR101243284B1 KR101243284B1 KR1020090091735A KR20090091735A KR101243284B1 KR 101243284 B1 KR101243284 B1 KR 101243284B1 KR 1020090091735 A KR1020090091735 A KR 1020090091735A KR 20090091735 A KR20090091735 A KR 20090091735A KR 101243284 B1 KR101243284 B1 KR 101243284B1
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- 238000000427 thin-film deposition Methods 0.000 title claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 73
- 239000002184 metal Substances 0.000 claims abstract description 67
- 229910052751 metal Inorganic materials 0.000 claims abstract description 67
- 238000000151 deposition Methods 0.000 claims abstract description 33
- 230000008021 deposition Effects 0.000 claims abstract description 27
- 239000010409 thin film Substances 0.000 claims abstract description 26
- 238000007736 thin film deposition technique Methods 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 10
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 15
- 229910000856 hastalloy Inorganic materials 0.000 claims description 8
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 239000004809 Teflon Substances 0.000 claims description 3
- 229920006362 Teflon® Polymers 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/206—Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
Abstract
본 발명은 박막 증착 방법에 관한 것으로서, 금속기판 상면에 박막 물질을 증착하기 위한 박막 증착 방법에 있어서, 박막 증착챔버 내부에 플라즈마를 생성시키고, 상기 금속기판에 (+)의 전압을 가하여 플라즈마 내의 전자가 금속기판을 향하도록 하여, 가속된 전자들이 금속기판 표면에 충돌하면서, 상기 금속기판의 온도를 가열시키는 것을 특징으로 하는 플라즈마를 이용한 저온 박막 증착 방법을 기술적 요지로 한다. 이에 의해 박막 고유의 성장조건은 기판 표면에서 유지하면서, 동시에 증착시스템의 온도는 상대적으로 낮추어, 일반적으로 고온 증착시스템에서 증착되는 박막의 물성과 동일한 결과를 가지게 되며, 경제적이면서 효율적인 박막 증착이 가능한 이점이 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film deposition method, wherein the thin film deposition method for depositing a thin film material on an upper surface of a metal substrate comprises generating a plasma inside the thin film deposition chamber and applying a positive voltage to the metal substrate to form electrons in the plasma. A low temperature thin film deposition method using a plasma is characterized by heating the temperature of the metal substrate while the accelerated electrons collide with the surface of the metal substrate so that the metal substrate faces the metal substrate. As a result, the intrinsic growth conditions of the thin film are maintained on the surface of the substrate, and at the same time, the temperature of the deposition system is relatively lowered, which has the same result as that of the thin film deposited in the high temperature deposition system. There is this.
박막 증착 저온 플라즈마 릴투릴 ＬＭＯ Thin Film Deposition Low Temperature Plasma Reel-to-Reel LMO
Description
본 발명은 박막 증착 방법에 관한 것으로서, 특히 박막 고유의 성장조건은 기판 표면에서 유지함과 동시에 증착시스템의 온도는 상대적으로 낮추기 위한 플라즈마를 이용한 저온 박막 증착 방법에 관한 것이다.The present invention relates to a thin film deposition method, and more particularly, to a low temperature thin film deposition method using plasma for maintaining the growth conditions inherent at the surface of a substrate and at the same time lowering the temperature of the deposition system.
일반적으로 초전도 선재는 영구전류모드를 위한 초전도 시스템에 있어서 길이 방향으로 긴 테이프 형상이 요구되는 실정이며, 이러한 길이 방향으로 긴 테이프 형상의 초전도 선재의 제조는 테이프 형상의 기판에 초전도 물질의 물리적, 화학적 증착방법에 의해 실현되고 있다.In general, a superconducting wire is required to have a long tape shape in the longitudinal direction in the superconducting system for the permanent current mode, the manufacture of a tape-shaped superconducting wire in the longitudinal direction is a physical and chemical It is realized by the vapor deposition method.
이러한 장선의 테이프 형상의 기판 상에 특정 물질을 증착하기 위한 것으로, 릴투릴(reel-to-reel)에 의한 방법이 있다. 이 방법은 한개의 릴은 테이프를 공급할 수 있도록 하고(이하에서는 "공급릴"이라 한다), 나머지 릴은 특정 물질이 증착된 테이프를 감을 수 있도록(이하에서는 "수거릴"이라 한다) 형성되어 특정 물질의 증착과 테이프의 공급 및 수거가 단일의 진공챔버 내부에서 지속적으로 이루어질 수 있으므로 특정 물질이 증착된 장선의 초전도 선재를 얻을 수 있게 되는 것이다.For depositing a specific material on such a long tape-like substrate, there is a method by reel-to-reel. This method allows one reel to feed the tape (hereinafter referred to as the "feed reel"), and the other reel is formed to wind the tape on which a particular material is deposited (hereinafter referred to as "collect"). The deposition of material and the supply and collection of tape can be carried out continuously within a single vacuum chamber, thereby obtaining a superconducting wire of a joist on which a specific material is deposited.
한편, 상기 장선의 초전도 선재의 제조를 위한 테이프 형상의 기판은 금속기판이 널리 사용되며, 초전도 선재는 크게 금속기판층, 산화물 완충층, 초전도층, 안정화층으로 4개의 층으로 이루어져 있다. 그리고, 초전도층을 형성하는 방법으로는 펄스레이저증착법(PLD), 금속유기체증착법(MOD), 금속유기체화학증착법(MOCVD), 그리고 동시증발법(co-evaporation), 일괄증착법(EDDC), 스파터링(sputtering)법 등의 다양한 방법이 있다.Meanwhile, a metal substrate is widely used for the tape-shaped substrate for manufacturing the long superconducting wire, and the superconducting wire is composed of four layers: a metal substrate layer, an oxide buffer layer, a superconducting layer, and a stabilization layer. In addition, as a method of forming a superconducting layer, pulsed laser deposition (PLD), metal organic vapor deposition (MOD), metal organic chemical vapor deposition (MOCVD), co-evaporation, batch deposition (EDDC), and sputtering There are various methods, such as the sputtering method.
그 중에서 상기 스파터링(sputtering)법은 물리적증기증착법(physical vapor deposition, PVD)의 일종으로 세계적으로 널리 이용되고 있는 박막 증착 공정으로, 증착된 박막의 밀도가 높고 금속 타겟을 사용할 경우 높은 증착률을 얻을 수 있으며 시스템 제작비 및 유지비가 저렴하다는 장점이 있다.Among them, the sputtering method is a thin film deposition process that is widely used worldwide as a kind of physical vapor deposition (PVD), and has a high deposition rate when the deposited thin film has a high density and a metal target. It can be obtained and the system manufacturing cost and maintenance cost is low.
이러한 스파터링법과 릴투릴 증착법의 결합에 의해 단일 챔버 내에서 연속적으로 장선의 초전도 선재의 증착이 가능하여, 경제적이면서도 박막의 품질이 우수한 장선의 초전도 선재를 얻을 수 있다.By combining the sputtering method and the reel-to-reel deposition method, it is possible to continuously deposit superconducting wires of long wires in a single chamber, thereby obtaining a superconducting wire of long wires which is economical and has excellent film quality.
그러나, 이러한 박막 증착법은 완충층의 증착을 위한 공정온도가 750℃ 이상의 고온으로, 이에 따라 내열부품이 요구되어 증착시스템 제작비용이 높아지고 있으며 고온으로의 셋팅 과정에서 시스템의 원활한 작동이 어려우며, 금속기판의 경우 기계적 강도가 급격히 떨어져 손상되기 쉽다.However, the thin film deposition method has a high process temperature for the deposition of the buffer layer of 750 ° C. or higher, thus requiring heat-resistant components and increasing the manufacturing cost of the deposition system, and it is difficult to operate the system smoothly in the process of setting the high temperature. If the mechanical strength drops sharply, it is easy to be damaged.
본 발명은 상기 문제점을 해결하기 위한 것으로, 박막 고유의 성장조건은 기판 표면에서 유지함과 동시에 증착시스템의 온도는 상대적으로 낮추기 위한 플라즈마를 이용한 저온 박막 증착 방법의 제공을 그 목적으로 한다.The present invention has been made to solve the above problems, and the object of the present invention is to provide a low temperature thin film deposition method using plasma for maintaining the growth conditions inherent on the substrate surface and at the same time lowering the temperature of the deposition system.
상기 목적을 달성하기 위하여 본 발명은, 금속기판 상면에 박막 물질을 증착하기 위한 박막 증착 방법에 있어서, 박막 증착챔버 내부에 플라즈마를 생성시키고, 상기 금속기판에 (+)의 전압을 가하여 플라즈마 내의 전자가 금속기판을 향하도록 하여, 가속된 전자들이 금속기판 표면에 충돌하면서, 상기 금속기판의 온도를 가열시키는 것을 특징으로 하는 플라즈마를 이용한 저온 박막 증착 방법을 기술적 요지로 한다.In order to achieve the above object, the present invention provides a thin film deposition method for depositing a thin film material on the upper surface of the metal substrate, the plasma is generated inside the thin film deposition chamber, the positive voltage is applied to the metal substrate to the electron in the plasma A low temperature thin film deposition method using a plasma is characterized by heating the temperature of the metal substrate while the accelerated electrons collide with the surface of the metal substrate so that the metal substrate faces the metal substrate.
또한, 상기 금속기판은 상기 증착챔버 내부로 릴투릴(reel-to-reel) 방법으로 이송되어 장선의 선재의 제조가 가능하도록 한다.In addition, the metal substrate is transferred to the inside of the deposition chamber by a reel-to-reel method to enable the production of a long wire.
여기에서, 상기 릴투릴의 공급릴 또는 수거릴에 구리 (+) 전극선을 전기적으로 접촉시켜 전압을 가하되, 금속기판과 접촉되는 테두리 부분에만 전압이 가해지도록 하고 공급릴 또는 수거릴과 다른 장치와의 연결부분은 전기적으로 절연되도록 테프론으로 형성되는 것이 바람직하다.Here, a voltage is applied by electrically contacting a copper (+) electrode wire to the supply reel or collecting reel of the reel to reel, so that the voltage is applied only to the edge portion in contact with the metal substrate, and is different from the supply reel or collecting reel. The connection portion of is preferably formed of Teflon to be electrically insulated.
또한, 상기 금속기판은, 장선의 테이프 형상으로 하스텔로이(Hastelloy) 상 층에 순차적으로 Al2O3, Y2O3, MgO로 이루어지며, 상기 하스텔로이에 (+)의 전압이 인가되는 것이 바람직하며, 여기에 증착되는 물질은 초전도체인 LMO인 것이 바람직하다.In addition, the metal substrate is made of Al 2 O 3 , Y 2 O 3 , MgO sequentially on the Hastelloy upper layer in the form of a long tape, the voltage of (+) is applied to the Hastelloy Preferably, the material deposited therein is preferably LMO, which is a superconductor.
상기 구성에 의해 본 발명은, 박막 고유의 성장조건은 기판 표면에서 유지하면서, 동시에 증착시스템의 온도는 상대적으로 낮추어, 일반적으로 고온 증착시스템에서 증착되는 박막의 물성과 동일한 결과를 가지게 되며, 이에 의해 경제적이면서 효율적인 박막 증착이 가능한 효과가 있다.According to the above configuration, the present invention maintains the intrinsic growth conditions on the surface of the substrate while at the same time relatively lowering the temperature of the deposition system, which generally has the same result as that of the thin film deposited in the high temperature deposition system. Economical and efficient thin film deposition is possible.
본 발명은 플라즈마를 이용한 저온 박막 증착방법에 관한 것으로, 금속기판 상면에 박막 물질을 증착하기 위하여 박막이 증착되는 증착챔버 내부에 플라즈마를 생성시키고, 상기 금속기판에 (+)의 전압을 가하여 플라즈마 내의 전자가 금속기판을 향하도록 하여, 가속된 전자들이 금속기판 표면에 충돌하면서, 상기 금속기판의 온도를 가열시키는 것이다.The present invention relates to a low temperature thin film deposition method using a plasma, in order to deposit a thin film material on the upper surface of the metal substrate to generate a plasma inside the deposition chamber in which the thin film is deposited, and to apply a positive voltage to the metal substrate in the plasma The electrons are directed toward the metal substrate, so that the accelerated electrons collide with the metal substrate surface, thereby heating the temperature of the metal substrate.
이에 의해 박막 고유의 성장조건은 가속된 전자들의 금속기판 표면에의 충돌에 의하여 금속기판 표면에서 유지하면서, 동시에 증착시스템의 온도는 상대적으로 낮추어, 일반적으로 고온 증착시스템에서 금속기판 상에 증착되는 박막의 물성과 동일한 결과를 가지게 된다.As a result, the intrinsic growth conditions of the thin film are maintained on the surface of the metal substrate by the impact of the accelerated electrons on the surface of the metal substrate, and at the same time, the temperature of the deposition system is relatively low, so that the thin film is generally deposited on the metal substrate in a high temperature deposition system. Has the same result as.
이하에서는 본 발명의 바람직한 실시예를 첨부된 도면을 참조하여 상세히 설 명하고자 한다. Hereinafter, with reference to the accompanying drawings, preferred embodiments of the present invention will be described in detail.
박막 증착을 위한 금속기판은 장선의 테이프 형상으로 하스텔로이(Hastelloy) 상층에 Al2O3, Y2O3, MgO로 이루어진 것으로, 그 상층에 LaMnO3(이하 LMO)박막을 증착하고자 한다. 여기에서 금속기판은 그 자체로 금속으로 이루어질 수도 있으며 상기와 같이 최하층에 전압이 인가되는 부분만 금속이어도 무방하며, 상기 하스텔로이에 (+)극을 전기적으로 접촉시켜 금속기판에 (+)전압을 인가하고자 한다.The metal substrate for thin film deposition is made of Al 2 O 3 , Y 2 O 3 , MgO on the Hastelloy upper layer in the form of a long tape, and a LaMnO 3 (hereinafter LMO) thin film is to be deposited on the upper layer. Herein, the metal substrate may be made of metal by itself, and the metal substrate may be only a portion where voltage is applied to the lowermost layer as described above, and a positive voltage is applied to the metal substrate by electrically contacting the positive electrode to Hastelloy. I want to authorize.
또한, 도 1에 도시된 바와 같이 상기 금속기판은 증착챔버 내부로 릴투릴(reel-to-reel) 방법으로 이송되도록 하여 장선의 박막 선재의 제조가 가능하도록 하며, 증착챔버와 동일한 진공상태를 유지하는 2개의 보조챔버 내부에, 금속기판을 테이프 형상으로 공급하는 공급릴과 증착된 박막의 수거를 위한 수거릴이 각각 형성되도록 하여, 증착소스 또는 히터로부터 차폐되도록 하여 테이프 상에 불필요한 증착 요소가 가해지지 않도록 형성된다.In addition, as shown in FIG. 1, the metal substrate is transferred to the inside of the deposition chamber by a reel-to-reel method to manufacture a thin film wire rod of a long wire, and maintains the same vacuum state as the deposition chamber. Inside the two auxiliary chambers, a supply reel for supplying a metal substrate in the form of a tape and a collection reel for collecting the deposited thin film are formed, respectively, to be shielded from the deposition source or the heater so that unnecessary deposition elements are applied on the tape. It is formed so as not to be supported.
먼저, 증착챔버의 진공도가 10-6Torr 이하가 될 때까지 배기하여, 기판온도가 650℃가 될 때까지 온도를 높인다. 그리고 10mTorr가 되도록 아르곤을 흘려준 후, 산소를 2.5sccm 흘려 준다. 이 때 코로나방전, 마이크로웨이브에 의한 방전, 아크방전 등에 의한 일반적인 플라즈마 생성 방법에 의해 증착챔버 내부에 플라즈마를 생성시킨다. 스퍼터링 증착시 스퍼터링 건 타겟 근처에서 생성된 플라즈마를 이용할 수도 있다.First, the evacuation chamber is evacuated until the vacuum degree is 10 -6 Torr or less, and the temperature is increased until the substrate temperature becomes 650 占 폚. And argon flows to 10mTorr, oxygen flows 2.5sccm. At this time, plasma is generated inside the deposition chamber by a general plasma generation method using corona discharge, microwave discharge, arc discharge, or the like. Plasma generated near the sputtering gun target during sputter deposition may be used.
그 다음 LMO 증착률이 0.4A/sec가 되도록 스파터링 건의 파워를 조절한다. 여기에서 스파터링법 뿐만 아니라 물리적, 화학적 모든 박막 증착 방법에 의해 구현될 수 있다. 다만, 금속기판의 사용시 증착율이 보다 높은 스파터링법을 사용하는 것이 바람직하다.The power of the spattering gun is then adjusted so that the LMO deposition rate is 0.4 A / sec. Herein, the thin film deposition method may be implemented by all thin film deposition methods as well as physical and chemical spattering methods. However, it is preferable to use a sputtering method having a higher deposition rate when using a metal substrate.
그리고, 상기 금속기판인 하스텔로이에 전압을 가한다. 상기 공급릴 또는 수거릴에 구리 (+) 전극선을 전기적으로 접촉시켜 전압을 가하게 된다. 여기에서 릴 전체에 전압이 가해지는 것이 아니라 금속기판과 접촉되는 테두리 부분에만 전압이 가해지도록 하고 릴과 다른 장치와의 연결부분은 전기적으로 절연되도록 테프론 등으로 형성되도록 한다.Then, a voltage is applied to Hastelloy, which is the metal substrate. A voltage is applied by electrically contacting a copper (+) electrode wire to the supply or collection reel. Here, instead of applying voltage to the entire reel, the voltage is applied only to the edge portion in contact with the metal substrate, and the connection portion between the reel and other devices is formed of Teflon or the like so as to be electrically insulated.
증착조건이 안정화되었을 때 공급릴 또는 수거릴을 작동시켜 금속기판 테이프를 이동시키면서 LMO를 금속기판 상면에 증착시킨다. 금속기판에 전압을 가한 경우와 가하지 않은 경우 두 종류의 샘플을 비교 분석하여 본 발명의 효과를 입증하고자 한다.When the deposition conditions are stabilized, the LMO is deposited on the upper surface of the metal substrate while moving the metal substrate tape by operating the supply or collection reel. When the voltage is applied to the metal substrate and when not applied to the two types of samples to analyze the effect of the present invention.
이와 같이, 증착챔버 내부에 플라즈마를 생성시키고 금속기판에 (+)의 전압을 가하면 플라즈마 내의 전자가 금속기판을 향하여 가속되고, 금속기판에만 전기장이 가해지므로 전자들이 주위시스템을 향하지 않고 금속기판에만 모이게 된다. 그리고 금속기판 표면에서 가속된 전자들이 금속기판 표면에 충돌하면서 에너지가 전달되고 표면온도가 가열되어 결과적으로는 다른 증착시스템은 온도는 상대적으로 낮추게 되고, 박막 고유의 성장조건은 기판 표면에서 유지가 되어 고온에서 박막을 증착하는 경우와 동일한 결과를 가지게 된다. 또한, 이온들은 같은 전하를 가지므 로 이온에 의한 박막 손상은 없다.As such, when a plasma is generated inside the deposition chamber and a positive voltage is applied to the metal substrate, electrons in the plasma are accelerated toward the metal substrate, and an electric field is applied only to the metal substrate so that the electrons do not face the surrounding system but collect only on the metal substrate. do. The accelerated electrons impinge on the surface of the metal substrate and energy is transferred and the surface temperature is heated. As a result, other deposition systems lower the temperature and the growth conditions inherent in the thin film are maintained at the substrate surface. The same result as in the case of depositing a thin film at a high temperature. In addition, since the ions have the same charge, there is no thin film damage by the ions.
도 2는 (+)전압을 가하지 않은 상태에서의 일반적인 LMO 박막의 온도 의존성을 알 수 있는 XRD 데이타를 나타낸 것으로서, 온도가 높을수록 LMO(001) 성장이 우세한 것을 알 수 있다. 또한 LMO(00l)피크는 750℃ 이상의 고온에서 성장이 주로 이루어지는 것으로 알려져 있다.Figure 2 shows the XRD data showing the temperature dependence of a typical LMO thin film in the absence of a (+) voltage, it can be seen that the higher the temperature, LMO (001) growth is superior. In addition, LMO (00l) peak is known to grow mainly at high temperatures of 750 ℃ or more.
도 3은 본 발명에 따라 (+)전압을 가한 상태에서의 LMO 박막의 XRD 데이타를 나타낸 것으로서, 750℃ 이상의 고온에서 관찰되는 LMO(00l) 피크가 금속기판에 (+)전압을 가한 경우에는 650℃의 낮은 온도에서도 성장함을 알 수 있다.Figure 3 shows the XRD data of the LMO thin film in the state of applying a positive voltage according to the present invention, when the LMO (00l) peak observed at a high temperature of 750 ℃ or more is applied to the metal substrate 650 It can be seen that it grows even at a low temperature of ℃.
도 4(a)는 금속기판에 (+)전압을 가하지 않은 경우의 LMO 박막의 회절무늬를 나타낸 것이고, 도4(b)는 본 발명에 따라 금속기판에 (+)전압을 가한 경우의 LMO 박막의 회절무늬를 나타낸 것이다. 도시된 바와 같이 금속기판에 전압을 인가하지 않은 경우에는 LMO(002) 피크가 없으며, 금속기판에 (+)전압을 인가한 경우에는 LMO(002) 피크가 나타남을 알 수 있다.Figure 4 (a) shows the diffraction pattern of the LMO thin film when the (+) voltage is not applied to the metal substrate, Figure 4 (b) shows the LMO thin film when the (+) voltage is applied to the metal substrate according to the present invention The diffraction pattern of is shown. As shown in the figure, there is no LMO (002) peak when no voltage is applied to the metal substrate, and LMO (002) peak appears when (+) voltage is applied to the metal substrate.
이와 같이, 증착챔버 내부에 플라즈마를 생성시키고 금속기판에 (+)의 전압을 가하면 플라즈마 내의 전자가 금속기판을 향하여 가속되어 금속기판 표면에 충돌하면서 기판의 표면온도를 상승시키게 되므로, 고온에서 박막을 증착하는 경우와 동일한 물성을 가지는 박막을 얻을 수 있었다.As such, when a plasma is generated inside the deposition chamber and a positive voltage is applied to the metal substrate, electrons in the plasma are accelerated toward the metal substrate and collide with the surface of the metal substrate to raise the surface temperature of the substrate. A thin film having the same physical properties as in the case of vapor deposition was obtained.
도 1 - 본 발명의 일실시예에 따른 플라즈마를 이용한 저온 박막 증착 방법에 대한 모식도.1-Schematic diagram of a low temperature thin film deposition method using a plasma according to an embodiment of the present invention.
도 2 - (+)전압을 가하지 않은 상태에서의 LMO 박막의 XRD 데이타를 나타낸 도(기판의 온도-(a)700℃, (b)750℃, (c)800℃, (d)850℃).2-XRD data of LMO thin film without (+) voltage (substrate temperature-(a) 700 ℃, (b) 750 ℃, (c) 800 ℃, (d) 850 ℃) .
도 3 - 본 발명에 따라 금속기판에 (+)전압을 가한 상태에서의 LMO 박막의 XRD 데이타를 나타낸 도.3 shows XRD data of an LMO thin film in a state in which a positive voltage is applied to a metal substrate according to the present invention.
도 4 - (a)본 발명에 따라 금속기판에 (+)전압을 가한 경우의 LMO 박막의 회절무늬를 나타낸 도, (b)금속기판에 (+)전압을 가하지 않은 경우의 LMO 박막의 회절무늬를 나타낸 도.Fig. 4-(a) Diffraction pattern of the LMO thin film when the (+) voltage is applied to the metal substrate according to the present invention, (b) Diffraction pattern of the LMO thin film when the (+) voltage is not applied to the metal substrate Shows.
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