KR101210646B1 - LED having vertical structure and method of making the same - Google Patents

Abstract

The present invention relates to a vertical light emitting device, and more particularly, to a vertical light emitting device having a high quality semiconductor thin film having high conductivity and a method of manufacturing the same. The present invention, the first electrode; A first conductive layer on the first electrode; An active layer positioned on the first conductive layer; A second conductive layer on the active layer, the second conductive layer comprising at least one semiconductor layer and at least one conductive semiconductor layer; It is preferably configured to include a second electrode located on the second conductive layer.

Conductive, LED, dopant, GaN, semiconductor.

Description

Vertical light emitting device and its manufacturing method {LED having vertical structure and method of making the same}

1 is a cross-sectional view showing an embodiment of a second conductive layer of the present invention.

2 is an enlarged view of FIG. 1.

3 is a graph showing the source gas injection when forming the mixed layer of the present invention.

Figure 4 is a graph showing the source gas injection when forming the conductive semiconductor layer of the present invention.

Figure 5 is a cross-sectional view showing an embodiment of the manufacturing step of the light emitting device of the present invention.

6 is a cross-sectional view showing an embodiment of a light emitting device of the present invention.

<Brief description of the main parts of the drawing>

100 substrate 200 second conductive layer

210: nucleation layer 220: mixed layer

230: conductive semiconductor layer 300: active layer

400: first conductive layer 500: p-type electrode

510: ohmic electrode 520: reflective electrode

600: support layer 710: n-type electrode

720: electrode pad

The present invention relates to a vertical light emitting device, and more particularly, to a vertical light emitting device having a semiconductor thin film with improved conductivity and quality, and a method of manufacturing the same.

Light Emitting Diodes (LEDs) are well-known semiconductor light emitting devices that convert current into light.In 1962, red LEDs using GaAsP compound semiconductors were commercialized, along with GaP: N series green LEDs. It has been used as a light source for display images of electronic devices, including.

The wavelength of light emitted by such LEDs depends on the semiconductor material used to make the LEDs. This is because the wavelength of the emitted light depends on the band-gap of the semiconductor material, which represents the energy difference between the valence band electrons and the conduction band electrons.

Gallium nitride compound semiconductors (Gallium Nitride (GaN)) have high thermal stability and wide bandgap (0.8 to 6.2 eV), which has attracted much attention in the development of high-power electronic components including LEDs.

One reason for this is that GaN can be combined with other elements (indium (In), aluminum (Al), etc.) to produce semiconductor layers that emit green, blue and white light.

This adjustable emission wavelength allows the material to be tailored to specific device characteristics. For example, GaN can be used to create a white LED that can replace the blue LEDs and incandescent lamps that are beneficial for optical recording.

Due to the advantages of these GaN-based materials, the GaN-based LED market is growing rapidly. Therefore, since commercial introduction in 1994, GaN-based optoelectronic device technology has rapidly developed.

The basic structure of the above-mentioned nitride semiconductor LED thin film layer is composed of a gallium nitride layer, an n-type gallium nitride layer, a light emitting layer, and a p-type gallium nitride layer in order on a heterogeneous substrate.

The n-type gallium nitride layer and the p-type gallium nitride layer are electrically conductive thin films, and a conventional method for manufacturing a nitride semiconductor thin film having such conductivity is a source of elements constituting the thin film during thin film growth. source gases and dopant gases are injected together into the growth equipment.

In this case, the dopant is incorporated into the thin film during the growth of the thin film, and the electrons or holes are supplied into the thin film according to the properties of the dopant to have the electrical conductivity of the p-type or n-type thin film.

At this time, the dopants for supplying electrons or holes in the thin film are placed in a substitutional position in the lattice position of the main elements constituting the thin film in the thin film and are evenly distributed throughout.

As described above, when the conductive thin film is manufactured, the dopants occupy the positions of the lattice sites of the main elements in the thin film during the thin film growth, thereby changing the surface characteristics and the growth mode of the growing thin film.

In particular, when a high electrical conductivity is required, the amount of dopant to be injected increases, in which case a significant change occurs in the surface characteristics and the growth mode of the growing thin film.

In the case of a nitride semiconductor thin film, when a large amount of dopant is injected, the surface mobility of atoms deposited on the growing thin film surface is greatly reduced, and thus, the crystallinity of the nitride semiconductor thin film is greatly reduced.

SUMMARY OF THE INVENTION The present invention has been made in an effort to provide a vertical light emitting device having a high quality nitride semiconductor thin film having high conductivity without deterioration of thin film crystallinity and a method of manufacturing the same.

As a first aspect for achieving the above technical problem, the present invention, the first electrode; A first conductive layer on the first electrode; An active layer positioned on the first conductive layer; A second conductive layer on the active layer, the second conductive layer comprising at least one semiconductor layer and at least one conductive semiconductor layer; It is preferably configured to include a second electrode located on the second conductive layer.

At least a portion of the second conductive layer may be alternately positioned between the semiconductor layer and the conductive semiconductor layer.

Preferably, the first conductive layer is a p-type semiconductor layer, and the second conductive layer is an n-type semiconductor layer, wherein the conductive semiconductor layer of the second conductive layer is a semiconductor layer containing a silicon dopant. desirable.

The second conductive layer may include: a mixed layer in which at least one semiconductor layer and at least one first conductive semiconductor layer are alternately positioned; It may be configured to include a second conductive semiconductor layer in contact with the mixed layer, in some cases, may further include a nucleation layer.

The first electrode may include an ohmic electrode; It may be configured to include a reflective electrode, the lower side of the first electrode, may further include a support layer made of a metal or a semiconductor.

As a second aspect for achieving the above technical problem, the present invention, forming a second conductive layer including at least one semiconductor layer and at least one conductive semiconductor layer on the substrate; Forming an active layer on the second conductive layer; Forming a first conductive layer on the active layer; Forming a first electrode on the first conductive layer; Separating the substrate; And forming a second electrode on the surface of the second conductive layer from which the substrate is separated.

The forming of the second conductive layer may be performed by repeatedly injecting or blocking a dopant on at least a portion of the semiconductor source on the substrate.

More specifically, the forming of the second conductive layer includes: forming a nucleation layer using a semiconductor source; Repeatedly injecting or blocking a dopant on the nucleation layer in a semiconductor source to form a mixed layer; It is preferably configured to form a conductive semiconductor layer comprising a semiconductor source and a dopant on the mixed layer.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

As shown in FIG. 1, first, a second conductive layer 200 is formed on a substrate 100. The second conductive layer 200 is a semiconductor thin film including a dopant, and may be an n-type semiconductor layer, or in some cases, a p-type semiconductor layer.

Hereinafter, the second conductive layer 200 will be described as an n-type semiconductor layer.

FIG. 2 is an enlarged view illustrating a state in which the second conductive layer 200 is formed on the substrate 100 of FIG. 1. As shown, first, a gallium nitride semiconductor thin film is grown on the substrate 100. Acts as a nucleation layer 210 to allow the gallium nitride semiconductor to grow on the heterogeneous substrate 100.

In the case of a nitride semiconductor (GaN) thin film, since the same substrate is not commercially available yet, the nitride semiconductor thin film is grown on a heterogeneous substrate 100 such as sapphire or silicon carbide (SiC).

As such, when the nitride semiconductor thin film is grown on the heterogeneous substrate 100, crystal defects due to the mismatch of crystal lattice between the heterogeneous substrate 100 and the nitride semiconductor thin film are formed near the interface.

Among these crystal defects, threading dislocations in particular penetrate into the thin film and propagate through the light emitting layer of the device to the surface. Therefore, in order to manufacture a high performance device, it is required to grow a high quality nitride thin film having a low crystal defect density.

The nucleation layer 210 formed on the substrate 100 as described above is formed to a thin thickness of about 100 nm using a gallium nitride semiconductor at low temperature.

Then, the growth temperature is raised to a high temperature of 1000 ° C. or more to grow a high temperature nitride thin film layer on the island-shaped nucleation layer 210.

At this time, in order to grow a high-definition thin film of low crystal defects, the thin film growth starts on the island-shaped initial nuclei and the degree of lateral growth is important at the same time as the vertical growth.

As thin-film growth continues, the early islands meet and mix with each other by lateral growth.

At this time, the pinholes are deeply formed in the portions where the islands meet laterally. These pinholes fill gradually as the thin film growth continues vertically and simultaneously with the vertical growth, and the thin film surface eventually becomes flat.

As described above, the nitride semiconductor grown on the heterogeneous substrate 100 starts to grow from an initial seed (nucleus) in an island form, crosses each other laterally, and undergoes an evolution process.

At this time, the evolution from flat to thin film is highly dependent on the lateral growth rate of the film.

However, when silicon (Si) is implanted with an n-type dopant during nitride thin film growth, the silicon dopant changes the surface characteristics at the thin film growth surface, thereby decreasing the mobility of major elements on the surface, thereby increasing the lateral growth rate of the thin film. Lowers.

In general, conventional light emitting devices implement a high performance device having high quality crystallinity by continuously growing an active layer and a p-type thin film layer on the n-type nitride thin film.

However, in the case of the vertical light emitting device, since the n-type electrode metal layer should be formed on the exposed surface after removing the heterogeneous substrate, the exposed thin film should be an n-type nitride thin film having excellent electrical conductivity.

The present invention can form a high quality conductive n-type nitride semiconductor layer by repeating injection and blocking of dopants periodically.

That is, the mixed layer 220 includes at least one nitride semiconductor layer 221 and an n-type conductive semiconductor layer 222, and as shown in FIG. 2, the semiconductor layer 221 and the n-type. The semiconductor layers 222 may be formed alternately and repeatedly.

As shown in FIG. 3, the mixed layer 220 is a high-quality conductive n-type nitride semiconductor layer by periodically injecting and blocking a silene (SiH ₄ ) gas, which is a dopant source gas of an n-type gallium nitride semiconductor, during thin film growth. The formation of is possible.

The thickness of the conductive semiconductor layer 222 into which the dopant is injected is preferably about 0.5 to 500 nanometers (nm), and the thickness of the semiconductor layer 221 through which dopant injection is blocked is about 0.5 to 700 nanometers (nm) desirable.

As described above, the dopant is periodically implanted and grown thin film is maintained at a high temperature for a certain time, or in the subsequent process step, the dopant is dispersed by thermal diffusion process, and eventually the entire mixed layer 220 thin film becomes conductive. .

As such, while the dopant is injected during the growth of the thin film, the surface properties of the thin film are changed and the growth behavior is changed, resulting in crystalline degeneration.

However, while dopant implantation is blocked, the surface properties of the growing thin film are restored and eventually the crystallinity of the thin film is restored. Therefore, the repetition of implantation and blocking of the dopant minimizes the deterioration of thin film crystallinity by the dopant.

In particular, when the n-type nitride thin film is grown on a heterogeneous substrate, the dopant effect on the growth behavior of the thin film is very large.

As such, when the second conductive layer 200 is grown on the substrate 100 on which the nucleation layer 210 is formed, the dopant is periodically injected in the initial stage to form the mixed layer 220, and the mixed layer 220 is fixed. After the thickness is grown and the surface is planarized, as shown in FIG. 4, the dopant is continuously implanted to form the n-type conductive semiconductor layer 230.

In the continuous dopant implantation to form the conductive semiconductor layer 230, the dopants in the mixed layer 220 in which the dopant previously formed is periodically injected may be effectively thermally diffused.

In this process, the second conductive layer 200 may provide a high-quality nitride thin film with high conductivity while minimizing crystalline degradation due to dopant injection.

As described above, the active layer 300 is formed on the second conductive layer 200 formed on the substrate 100 as shown in FIG. 5.

The active layer 300 may have an InGaN / GaN quantum well (QW) structure. In addition, materials such as AlGaN and AlInGaN may also be used as the active layer 300.

In the active layer 300, when an electric field is applied in a later structure, light is generated by coupling of an electron-hole pair.

In addition, the active layer 300 may have a plurality of quantum well structures (QW) described above to form a multi quantum well (MQW) structure to improve luminance.

The first conductive layer 400 is formed on the active layer 300. In this case, the first conductive layer 400 may be a p-type gallium nitride semiconductor layer, and the dopant may be magnesium (Mg).

A thin n-type semiconductor layer 240 is formed on the first conductive layer 400, thereby improving characteristics of an ohmic electrode.

Thereafter, the p-type electrode 500 is formed. The p-type electrode 500 may include a transparent ohmic electrode 510 such as indium tin oxide (ITO), and a reflective electrode 520 for reflecting light emitted from the active layer 300 to be emitted to the outside. .

The support layer 600 may be formed on the p-type electrode 500 to support a structure formed on the substrate 100 in a process of separating the substrate 100 later.

The support layer 600 may be formed by bonding a semiconductor substrate such as silicon (Si), gallium arsenide (GaAs), germanium (Ge), or a metal substrate such as CuW onto the reflective electrode 520. In addition, the metal may be formed by plating a metal such as nickel (Ni) or copper (Cu) on the reflective electrode 520.

When the support layer 600 is made of metal, the support layer 600 may be formed using a seed metal to improve adhesion to the reflective electrode 520.

Thereafter, the process of removing the substrate 100 is performed.

The substrate 10 may be removed by a laser using a so-called laser lift off method, or may be removed by a chemical method using an etching method.

In the process of removing the substrate 100, the support layer 600 may support a structure formed on the substrate 100.

As described above, the second conductive layer 200 is exposed on the surface from which the substrate 100 is removed.

In this case, the outer surface of the second conductive layer 200 may be washed or subjected to a surface treatment process such as etching. In this process, the nucleation layer 210 may be removed.

As described above, an n-type electrode 710 is formed on the second conductive layer 200 made of an n-type gallium nitride semiconductor, and an electrode pad 720 is formed on the support layer 600 to form an LED structure.

<Examples>

Hereinafter, specific embodiments of the present invention will be described with reference to FIGS. 1 to 6.

In this embodiment, metal-organic chemical vapor deposition (MOCVD) is used to grow the nitride semiconductor thin film.

Sapphire is used as the substrate 100, ammonia (NH ₃ ) is used as the nitrogen source, and hydrogen (H ₂ ) and nitrogen (N ₂ ) are used as the carrier gas.

Organometallic gallium (TMGa), organometallic indium, and organometallic aluminum were used as gallium, indium and aluminum sources, respectively. The n-type dopant was made of silicon (Si), and the p-type dopant was made of magnesium (Mg). Siylene (SiH ₄ ) is used as the silicon source gas.

The second conductive layer 200 made of an n-type nitride semiconductor having a thickness of 7 μm was grown on the sapphire substrate 100 at 1030 ° C., and a growth pressure of 250 Torr was applied thereto. Specific methods applied to the growth of the second conductive layer 200 are as follows.

First, the sapphire substrate 100 is inserted into the thin film growth equipment, and the nucleation layer 210 of the thin nitride semiconductor having a thickness of 70 nm is grown at 550 ° C.

Next, after increasing the growth temperature to 1030 ℃ large amount of silicon source gas is injected with gallium source gas and ammonia.

At this time, the injection of the silicon source gas has a predetermined period during the growth of the thin film to grow the mixed layer 220 by repeating the injection and blocking.

The injection and blocking of the silicon source gas is controlled so that the thickness of the thin film having the dopant is 50 nm and the thickness of the thin film having no dopant is 50 nm. At this time, the repetition cycle is repeated 20 times.

Then, the growth of the conductive semiconductor layer 230 of the 5 nm thick n-type nitride semiconductor is continuously implanted without blocking the dopant.

After the growth of the second conductive layer 200, a light emitting layer (active layer: 300) having seven pairs of indium gallium nitride / gallium nitride (InGaN / GaN) multi-quantum well structure is formed thereon.

The first conductive layer 400 is grown on the active layer 300 using a 0.1 μm p-type gallium nitride semiconductor, and a thin n-type semiconductor layer 240 is formed on the top thereof to improve ohmic characteristics.

In order to facilitate the injection of holes, the ohmic electrode 510 is deposited by 0.2 μm using indium tin oxide (ITO), and then the copper is bonded to the reflective electrode 520 and the support layer 600.

Next, after the sapphire substrate 100 is removed using a laser, the exposed n-type nitride semiconductor thin film surface is subjected to physicochemical surface treatment to form an n-type electrode 710.

The above embodiment is an example for explaining the technical idea of the present invention in detail, and the present invention is not limited to the above embodiment, various modifications are possible, and various embodiments of the technical idea are all of the present invention. Naturally, it belongs to the scope of protection.

The present invention as described above has the following effects.

First, in the growth of the conductive layer, a high quality nitride semiconductor thin film having high conductivity can be produced by repeating the injection and blocking of dopants at regular cycles without deterioration of thin film crystallinity.

Second, the conductive layer according to the present invention has a high conductivity, and at the same time the nitride semiconductor thin film having high quality crystallinity will greatly improve the device performance of the nitride semiconductor optical device and optoelectronic device.

Moreover, the vertical optical device grown on the dissimilar substrate will greatly improve its productivity.

Claims (14)

A first electrode; A first conductive layer formed on the first electrode; An active layer formed on the first conductive layer; A second conductive layer formed on the active layer; A second electrode formed on the second conductive layer, The second conductive layer, A mixed layer in which at least one nitride semiconductor layer and at least one conductive semiconductor layer are alternately formed repeatedly; Vertical light emitting device comprising a conductive semiconductor layer formed on the mixed layer. delete The vertical light emitting device of claim 1, wherein the first conductive layer is a p-type semiconductor layer, and the second conductive layer is an n-type semiconductor layer. The vertical light emitting device of claim 1, wherein the conductive semiconductor layer of the second conductive layer is a semiconductor layer containing a silicon dopant. delete The vertical type light emitting device of claim 1, wherein the thickness of the nitride semiconductor layer of the mixed layer is 0.5 to 700 nm. The vertical type light emitting device of claim 1, wherein a thickness of the conductive semiconductor layer of the mixed layer is 0.5 to 500 nm. The vertical light emitting device of claim 1, wherein the second conductive layer further comprises a nucleation layer. The method of claim 1, wherein the first electrode, An ohmic electrode; Vertical light emitting device comprising a reflective electrode. The vertical light emitting device of claim 1, further comprising a support layer formed of a metal or a semiconductor under the first electrode. Forming a second conductive layer on the substrate; Forming an active layer on the second conductive layer; Forming a first conductive layer on the active layer; Forming a first electrode on the first conductive layer; Separating the substrate; Forming a second electrode on a surface of the second conductive layer on which the substrate is separated; Forming the second conductive layer, Repeatedly injecting or blocking a silicon dopant into a gallium nitride semiconductor source to form a mixed layer in which at least one nitride semiconductor layer and at least one conductive semiconductor layer are alternately repeated; And continuously injecting a silicon dopant into the gallium nitride semiconductor source on the mixed layer to form a conductive semiconductor layer. 12. The method of claim 11, further comprising, after forming the first electrode on the first conductive layer, forming a support layer made of a metal or a semiconductor. delete The method of claim 11, wherein forming the second conductive layer comprises: Prior to forming the mixed layer, further comprising the step of forming a nucleation layer using a gallium nitride semiconductor source, Forming the mixed layer, And a silicon dopant is repeatedly injected or blocked into the gallium nitride semiconductor source on the nucleation layer to form a mixed layer.

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