KR101207384B1 - Method and apparatus for cleaning of semiconductor wafer using micro nano-bubble - Google Patents

Abstract

The semiconductor cleaning method using the micro nanobubble of the present invention; A functional water generation process of mixing ozone (O ₃ ) and nitrogen (N ₂ ) in deionized water (DIW) without mixing the washing liquid into a mixing pump to obtain a functional water; A nanobubble generating process of passing the functional water through a micronanobubble generator to make micronanobubbles of 5 nm or less; The micro nanobubbles are sprayed on or under the surface of the semiconductor substrate or sprinkled to flow naturally, thereby cleaning the organic material on the surface of the semiconductor substrate.
In addition, the semiconductor cleaning device using a micro nanobubble of the present invention; A microbubble of 5 nm or less is made by passing a nanobubble generator through a nanobubble generator by mixing functional water mixed with ozone and nitrogen in a deionized water (DIW) without using a cleaning solution. A nanobubble generator; The organics portion on one side has an overflow tank which is to have the organic matter in multiples which flows processed multiples depending on the water flow connected to the organic material in multiples consists of water played in the oil separation through the filter supplying water to the mixing pump of ozone (O ₃₎ And a first washing tank having a port for exhausting nitrogen (N ₂ ) and having nanobubbles sprayed by the injection pump of the micro nanobubble generator to perform bubble spray cleaning. The organics portion on one side has an overflow tank which is to have the organic matter in multiples which flows processed multiples depending on the water flow connected to the organic material in multiples consists of water played in the oil separation through the filter supplying water to the mixing pump of ozone (O ₃₎ And a _second port having a port for exhausting nitrogen (N ₂ ), the nanobubble being injected into the injection pump of the micro-nanobubble generator, and the clean dry air (CDA) being injected, thereby performing two-fluid jet cleaning. Car wash tank; A first air curtain positioned between the first cleaning tank and the second cleaning tank and forming a curtain wall with clean dry air (CDA) so that the water cleaned in the next cleaning section does not pass over; A second air curtain forming a curtain wall with clean dry air (CDA) so that the water cleaned in the next cleaning section does not fall; A rinse bath for cleaning the semiconductor substrate by spraying DI water; A third air curtain forming a curtain wall with clean dry air (CDA) so that the water cleaned in the next cleaning section does not fall; A drying bath for drying the semiconductor substrate with a clean dry air (CDA); The first cleaning tank, the second cleaning tank and the rinsing tank are each provided with an object sensing proximity sensor capable of sensing the entry of the substrate, and the transfer speed of the semiconductor substrate is received by the object sensing proximity sensor for each cleaning section. Conveyor motor for adjusting the speed of the conveyor so as to operate separately.
In the present invention, the functional water added with ozone and nitrogen to deionized water (DIW, Deionized water) is made into a micro nanobubble (less than 5um) in the cleaning step and sprayed directly on the object to be cleaned. As the flowing micro nanobubbles float and apply oil, the waste washing liquid containing particles and oil sinks or drains to one side, so that no contaminants are attached to the object to be cleaned. The cleaning time can be easily adjusted according to the contamination level of the object to be cleaned. An air curtain is formed between each cleaning section to prevent the pollutants or water from being washed into the next cleaning section. Irrespective of the size, the width of the conveyor can be easily adjusted to clean the object to be cleaned.

Description

TECHNICAL AND APPARATUS FOR CLEANING OF SEMICONDUCTOR WAFER USING MICRO NANO-BUBBLE}

The present invention relates to a method for cleaning a semiconductor using micro nanobubbles and a device thereof, and more particularly, to a functional water in which ozone and nitrogen are added to deionized water (DIW) without using a cleaning liquid in a washing step. The micro nanobubble flowing down from the cleansing object by floating it into the cleansing object by making it into a bubble (less than 5 μm) is applied by floating oil, and the waste washing liquid containing particles and oils sinks or drains to one side. Excellent cleaning effect due to no contaminants attached to the product, and the cleaning time can be easily adjusted according to the contamination level of the cleansing object according to the speed setting of each proximity sensor and conveyor motor, and an air curtain is formed between each cleaning section. Prevents contaminants or water from entering the next cleaning section and ensures that the conveyor How to easily adjust the width of the blood cleaning semiconductor cleaning using micro-nano bubble cleaning water is made and to the device.

In general, in the semiconductor field, various kinds of process gases or liquids are used, and reactants generated in various chambers are formed and adhered to components according to the use time. In such a case, it is necessary to clean the parts according to a certain period. In particular, when parts of the used equipment are reused after re-assembling the parts, cleaning of the entire parts is inevitable.

The cleaning method disclosed in the conventional semiconductor field varies depending on the type of gas or liquid used, and can be broadly divided into a dry method and a wet method. Dual dry methods include vapor phase cleaning, UV cleaning, sputtering cleaning, and purely thermally enhanced cleaning.

Figure 3 is a step showing a conventional wet cleaning method commonly used, the double wet method is a step of immersing the object to be treated in a specific chemical solution, and then subjected to ultrasonic treatment and rinsing process again, followed by baking and drying Going through.

When cleaning, it is very important to completely remove impurities, oil (oil), stains, etc. from the object to be cleaned in advance, so make sure that the cleaning is done completely so that no defect occurs in the next process after cleaning. do.

The process of immersing the semiconductor substrate to be cleaned in a bubble tank with a robot arm by immersing the semiconductor substrate as a robot arm in a tank for a few minutes for a few minutes to bubble the oil and rising to the water surface. There was a bubble washing method for washing by repeating a few times.

However, such a conventional bubble cleaning method has a structural problem that is too difficult to clean the large sized object to be cleaned because the object to be cleaned with the robot arm to repeat the process of putting into the bubble tank.

In addition, since the semiconductor substrate is immersed in a bubble tank and then taken out, the organic substrate (oil) floating on the water surface is attached to the semiconductor substrate again in the process of removing the semiconductor substrate again, thereby reducing the cleaning effect.

The present invention is to solve the above problems, in the cleaning step without using the cleaning solution in the deionized water (DIW, Deionized water) to make the functional water added with ozone and nitrogen into the micro nanobubble (less than 5um) to be washed By spraying directly on the water, the micro nanobubble flowing down from the object is floated by applying oil, and the waste washing liquid containing particles and oil sinks or drains to one side, so the contaminants do not adhere to the object to be cleaned. The cleaning time can be easily adjusted according to the contamination level of the cleaned object according to the speed setting of each proximity sensor and the conveyor motor, and an air curtain is formed between each cleaning section to clean the pollutants or water to the next cleaning section. It prevents the inflow, and the width of the conveyor makes it easy to clean the object regardless of the size of the object. Eojineun it is an object to provide a semiconductor device and a cleaning method using a micro-nano bubbles.

In order to achieve the above object, the semiconductor cleaning method using a micro nanobubble of the present invention;

A functional water generation process of mixing ozone (O ₃ ) and nitrogen (N ₂ ) in deionized water (DIW) without mixing the washing liquid into a mixing pump to obtain a functional water;

A nanobubble generating process of passing the functional water through a micronanobubble generator to make micronanobubbles of 5 nm or less;

The micro nanobubbles are sprayed on or under the surface of the semiconductor substrate or sprinkled to flow naturally, thereby cleaning the organic material on the surface of the semiconductor substrate.

In addition, the semiconductor cleaning device using a micro nanobubble of the present invention;

A microbubble of 5 nm or less is made by passing a nanobubble generator through a nanobubble generator by mixing functional water mixed with ozone and nitrogen in a deionized water (DIW) without a cleaning solution through a mixing pump. A nanobubble generator;

The organics portion on one side has an overflow tank which is to have the organic matter in multiples which flows processed multiples depending on the water flow connected to the organic material in multiples consists of water played in the oil separation through the filter supplying water to the mixing pump of ozone (O ₃₎ And a first washing tank having a port for exhausting nitrogen (N ₂ ) and having nanobubbles sprayed by the injection pump of the micro nanobubble generator to perform bubble spray cleaning.

The organics portion on one side has an overflow tank which is to have the organic matter in multiples which flows processed multiples depending on the water flow connected to the organic material in multiples consists of water played in the oil separation through the filter supplying water to the mixing pump of ozone (O ₃₎ And a _second port having a port for exhausting nitrogen (N ₂ ), the nanobubble being injected into the injection pump of the micro-nanobubble generator, and the clean dry air (CDA) being injected, thereby performing two-fluid jet cleaning. Car wash tank;

A first air curtain positioned between the first cleaning tank and the second cleaning tank and forming a curtain wall with clean dry air (CDA) so that the water cleaned in the next cleaning section does not pass over;

A second air curtain forming a curtain wall with clean dry air (CDA) so that the water cleaned in the next cleaning section does not fall;

A rinse bath for cleaning the semiconductor substrate by spraying DI water;

A third air curtain forming a curtain wall with clean dry air (CDA) so that the water cleaned in the next cleaning section does not fall;

A drying bath for drying the semiconductor substrate with a clean dry air (CDA);

The first cleaning tank, the second cleaning tank and the rinsing tank are each provided with an object sensing proximity sensor capable of sensing the entry of the substrate, and the transfer speed of the semiconductor substrate is received by the object sensing proximity sensor for each cleaning section. It is characterized by having a conveyor motor for controlling the conveyor speed so as to operate separately.

As such, the present invention does not use the cleaning solution in the washing step, by making the functional water added ozone and nitrogen to deionized water (DIW, Deionized water) to make a micro nanobubble (less than 5um) to be sprayed directly to the object to be cleaned As the micro nanobubbles flowing out of the water apply oil to the surface, and the waste washing liquid containing particles and oil sinks or drains to one side, it has excellent cleaning effect because no contaminants adhere to the object to be cleaned. According to the speed setting of the conveyor motor, the cleaning time according to the contamination level of the cleansed object can be easily adjusted, and an air curtain is formed between each cleaning section to prevent the inflow of the cleaned contaminants or water into the next cleaning section. Irrespective of the size of the cleaning material, the width of the conveyor can be easily cleaned by washing the object.

The present invention is not limited to the above-described specific preferred embodiments, and various modifications can be made by those skilled in the art without departing from the gist of the present invention as claimed in the claims. Of course, such changes will fall within the scope of the claims.

1 is an explanatory diagram illustrating a configuration of a semiconductor cleaning device using micro nanobubbles according to an embodiment of the present invention;
2 is a side cross-sectional view illustrating a concept of a semiconductor cleaning device using micro nanobubbles according to an embodiment of the present invention;
Figure 3 is a step showing a conventional wet cleaning method commonly used.

Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings.

For reference, in describing the present invention, when it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the gist of the present invention, the detailed description thereof is omitted.

In addition, terms to be described below are terms defined in consideration of functions in the present invention, which may vary according to the intention or convention of a user or an operator.

Therefore, the definition should be made based on the contents throughout the specification.

In the semiconductor cleaning method using the micro nanobubbles of the present invention, ozone (O ₃ ) and nitrogen (N ₂ ) are added to a mixing pump in a deionized water (DIW) without using a cleaning solution. A functional number generation process of obtaining a functional number; A nanobubble generating process of passing the functional water through a micronanobubble generator to make micronanobubbles of 5 nm or less; The micro nanobubbles are sprayed on or under the surface of the semiconductor substrate or sprinkled to flow naturally, thereby cleaning the organic material on the surface of the semiconductor substrate.

As an environmentally friendly semiconductor cleaning technology, electrolytic ion water cleaning, functional water cleaning, ultrasonic cleaning, and the like have been developed and are already in practical use.

The semiconductor cleaning method using the micro nanobubbles of the present invention also uses a micro nanobubble having a diameter of 0.1 μm or less as a new environmentally friendly cleaning technology.

Table 1 summarizes the characteristics and control factors of the cleaning technique using the gas-liquid interface control technique. Functional water is a state in which a liquid gas is completely dissolved, and ozone water washing in which ozone is dissolved is typical. In addition, a cleaning method in which mist and steam are present in the air is called mist cleaning or vapor cleaning. Supplying water to the object to be cleaned at high speed and washing with the impact force is called jet cleaning.

On the other hand, the semiconductor cleaning method using the micro nanobubbles of the present invention is to wash by the presence of a micro nanobubble (bubble) having a diameter of 0.1um or less in water, different from the other methods described above.

Interface control technology using gas in cleaning



system

용해/용존 기포 Mist?Vapor 안개,증기

Dissolved / Dissolved Bubbles Mist Vapor Mist, Vapor Cleaning method Function Micro bubble HF Vapor
Ozon Vapor Two-fluid Jet
Aerosol mainly
Physical factor Henry's integer
(Solubility, ppm) Void rate
(Surface Area) (%) Vapor pressure
(Surface Area) (Pa,%) Fog, vaporization mainly
Control factor Oxidation restoration (ozone,
Hydrogen, pH)
Megasonic Bubble Diameter,
density Ozone, organic solvent, temperature and pressure Flow velocity, surface tension mainly
Object to be removed Organic matter
particle
metal Organic matter
(particle) Organic matter
(particle) particle Practical
assignment Even if hired
(高 溶解度) Bubble
Densification Gas
High concentration Large Area Treatment

The semiconductor cleaning method using the micro nanobubbles of the present invention is due to the following characteristics. The characteristics described below are expected to remove the fine particles by the electrostatic interaction with the bubble surface and the organic matter by the hydrophobic interaction with the bubble surface.

1) The surface area per unit volume is large.

2) Bubble surface is hydrophobic (not friendly to water)

3) The surface of the bubble is charged positively or negatively

4) It collapses when an appropriate physical force is applied to the bubble.

5) Due to the long residence time in water, the working efficiency on the solid surface is improved.

6) Because of its fine shape, it can cope with complicated shapes.

The semiconductor cleaning method using the micro nanobubbles of the present invention realizes high-density micro nanobubbles by developing an environmentally friendly and safe antifoaming agent in order to adapt a large amount of components to a short time treatment, and based on its enormous surface area. It is a cleaning method characterized by high cleaning ability and separation ability. The degreasing cleaning technique mainly by microbubbles will be described, and the outline of the technology and the effect of the process application will be described in outline.

[Figure 1] Comparison of the principle of cleaning with detergent and cleaning with bubble

[Figure 1] shows the principle of the cleaning method using a cleaning agent and air bubbles. In general, the basic cleaning principle of the cleaning agent is the solvent's dissolving power or physical peeling force. The fundamental challenge is that the contaminants cannot be separated from the cleaner because of their high affinity for the cleaner and the remover. For this reason, as the throughput increases, the removal object accumulates in the cleaning agent, making it difficult to secure stable cleaning power. It is also calculated that in Japan, about 50 billion yen is spent annually for the cost of cleaning agents.

In order to solve these problems fundamentally, we focused on the characteristics of bubbles, that is, the bubble surface is hydrophobic, and that bubbles have buoyancy. In other words, if bubbles are present in the water, fats and oils are adsorbed on the surface of the hydrophobic bubbles. In addition, since bubbles have buoyancy, it is assumed that the oils and fats attached can be lifted to the surface and separated. In the plant cleaning process, it is necessary to collectively clean hundreds of objects to be cleaned in various sizes and complex shapes. The requirements are mainly three points.

First, achieve high cleanliness levels of detergent within minutes

Second, ensure uniformity of treatment

Third, long-term maintenance of cleaning performance should be possible.

In order to realize the cleanliness level of the cleaning agent, a large amount of fats and oils must be removed in a short time, so the surface area of the bubbles needs to be increased.

, 기포의 표면적 S는

로, 단위체적 당의 표면적은 S/V=6/d가 된다. 이 식으로부터 단위체적 당의 표면적은 기포직경에 반비례한다는 것을 알 수 있다. 따라서, 기포직경의 축소와 기포의 고밀도화가 생산성의 확보의 관점에서는 중요하게 된다.The volume V of bubbles of diameter d is

, The surface area of the bubble S

The surface area per unit volume is S / V = 6 / d. It can be seen from this equation that the surface area per unit volume is inversely proportional to the bubble diameter. Therefore, reduction of bubble diameter and increase of bubble density become important from the viewpoint of securing productivity.

The reduction of the bubble diameter is also necessary in order to apply bubbles to every corner of the solid surface to ensure uniformity of treatment. For long-term maintenance of the cleaning performance, effective flotation of contaminants using buoyancy of bubbles is required.

On the other hand, contaminated particle removal utilizes the charging of the bubble surface in water and the charging of the fine particle surface. As a result of examining the adsorption phenomenon on the surface of the micro nanobubbles using the fine particles of iron oxide, adsorption occurs in the pH range where the surface potential of the micro nanobubbles is negative and the surface potential of the iron oxide is positive, and the adsorption efficiency Has been found to be strongly influenced by both surface potentials.

As such, in the case of fine particle cleaning, it is important to control the electrostatic interaction between the bubbles and the fine particles.

The production of the micro nanobubbles in the semiconductor cleaning method using the micro nanobubbles of the present invention can be produced by smashing the gas and the sieve with physical force or by ejecting them from a small hole. The problem of increasing the density of the micro nanobubbles is that if bubbles are frequently contacted in pure water, even if any production means is used, coalescence occurs and the bubbles become large.

[Figure 2] below shows the instant of bubble bubble shot using high speed camera. When micro nanobubbles collide with each other like this, bubbles repeatedly become coalesced and become larger.

  Room temperature (28 degrees), 500uS increments, shutter speed 10uS

[Figure 2] Observation of bubble fusion phenomenon by high speed microscope video camera

For this reason, the density of the micro nanobubbles realized in pure water is limited, and it is difficult for the micro nanobubbles produced by water only to obtain the bubble density required for degreasing cleaning. It has been reported that certain chemical substances have the effect of preventing the unification of bubbles. As an additive suitable for cleaning, the following five conditions are considered in terms of chemical and cleaning in consideration of environmental load, cost, safety and practicality. In this regard, many studies were conducted on various factors such as molecular weight and polarity of chemical substances.

First, additives in terms of chemical properties

1) Randomly soluble in water

2) Must be a safe chemical (toxic, outside of PRTR)

3) To exert effect at low concentration

Second, additives in terms of cleaning

4) Low foaming (bubble by reaction with water)

5) Maintain the effect in hot water (over 50 degree)

Accordingly, the high density micro nanobubbles produced by adding a very small amount of the additive developed in [Figure 3] below, and the picture without the additive are shown. In the container with the additive, it can be seen that the inside of the container is clouded white like milk due to the presence of high density micro nanobubbles.

[Figure 3] Close-up photo of high density microbubble and container using anti-foam additives (left: with additives, right: without additives)

As such, the effect of additives having an inhibitory effect on bubble synthesis is absolute.

One of the important roles of the micro nanobubbles in the semiconductor cleaning method using the micro nanobubbles of the present invention is to adsorb oil components such as processing oil and cutting oil on the surface of the bubbles.

[Figure 4] Observation of oil removal process by high speed microscope video camera

[Figure 4] shows a representative image of visualization using a high-speed camera. The oil is applied to the slide glass thinly, and the bubbles are continuously supplied (①) from the needle placed below, and the state is rapidly changed. Filmed with a microscopic video camera, the bubble that emerges from the syringe and floats from the bottom stays on the oil surface for a while, and the oil develops on the entire bubble surface (2). After that, the bubble is separated from the oil surface (③). At this time, the surface of the bubble loses its original luster and can be seen that a thin oil film is attached. After the bubble escapes, the adhered oil is certainly less than the initial state, so that the oil on the substrate is almost completely removed within a few seconds.

As shown in the right side of [Figure 4], hydrophobic oils exist in an unstable state in water. When a hydrophobic field is provided therein in the form of bubbles, oil molecules adhere to the surface of the hydrophobic group toward the bubble side due to its affinity. At this time, the amount of oil that one bubble can adsorb is very small, but it is possible to remove the oil on the substrate by repetition. This is the principle of oil removal by the micro nanobubbles in the semiconductor cleaning method using the micro nanobubbles of the present invention.

At this time, the fat or oil that can be adsorbed by one bubble is very small, but since it is frequently repeated, it is possible to remove the oil in the solid state. Therefore, in order to remove a large amount of fat and oil in a practical time range, the surface area should be increased as much as possible. In other words, the density of the micro nanobubbles becomes important. In addition, in general, the target parts requiring cleaning have complicated shapes such as curved surfaces and irregularities, and it is also proved through this experiment that the refinement of bubbles is important for achieving uniformity of treatment.

[ Fig. 5] Microcirculation principle of cleaning

[Fig. 5] shows the principle of degreasing cleaning by micro nanobubbles in the semiconductor cleaning method using the micro nanobubbles of the present invention. The oil and fat in the washing water can be separated by supplying the high density micro nanobubbles produced by the micro nanobubble generating unit to the component group and flowing the retained fat to the overflow tank side.

Thus, the micro-nanosphere of the present invention is implemented, in which a semiconductor cleaning method using the micro-nanobule of the present invention utilizing these characteristics by using the generation of high density micro nanobubbles using a very small amount of additives and the removal principle of oils and fats by the micro nanobubbles is implemented. A semiconductor cleaning device using bubbles has been developed. Figure 6 shows the schematic of this micro-nanobubble cleaning system.

[Figure 6] Schematic diagram of micro nano bubble cleaning device

The main function of the semiconductor cleaning device using the micro nanobubble of the present invention is to effectively operate the object to be cleaned inside the microbubble generated by the micronanobubble generator. In addition, in the case of micro nanobubble cleaning, since an oil film is formed on the water surface by the oil-separation action, the removal mechanism and the overflow tank which floated as a washing tank are provided. This feature of the invention,

First, it is low cost. That is, low operating costs due to water-based washing water are consumed.

Second, low environmental load. That is, the sewage can be sent to the water-based washing water without any treatment.

Third is safety. That is, it is safe to add trace amounts of non-toxic chemicals.

[Figure 7] shows images before and after micro nanobubble cleaning (10 seconds) of hydrophobic cutting oil which is difficult to clean attached to mechanical parts. The oil sticking to the surface before washing is completely removed by the micro nanobubble washing of the present invention, and the wetness of the water droplets attached after rinsing removes the oil and makes the surface of the part hydrophilic. Able to know.

[ Figure 7] Photos before and after cleaning attached parts with micro bubble

[Figure 8] shows the cleaning effect of the present invention micro nanobubbles. Hard-washing hydrophobic oil is applied to the entire surface of the cylindrical part, micro-nanobubble washing (2 min) is performed, rinsing in pure water, spray drying of nitrogen gas, and residual oil before and after washing. The oil content density (μg / cm 2) is calculated. The residual oil density, which was 1280 µg / cm 2 before washing, was about half that in washing without bubbles (washing only with running water), and 180 µg / cm 2 with bubbles of a few mm order without additives. On the other hand, in the micro nanobubble cleaning, the residual oil is 4.8 µg / cm 2, which is about 100 times higher than no bubbles and about 30 times higher than normal bubbles.

This figure is comparable to a commercial alkali cleaner. By increasing the surface area due to the miniaturization of bubbles and spreading uniformly on a solid surface of a complex shape, it has been proved that high cleanliness level can be achieved with only micro nanobubbles.

[ Fig. 8] Cleaning result of maintaining poor rinsability by micro bubble

In particular, the most important thing in the micro nanobubble cleaning of the semiconductor cleaning device using the micro nanobubble of the present invention is to enable repeated use of the washing water. Although it contains only a very small amount of additives, it is because the practical use is poor if the washing water is changed frequently.

[ Figure 9] Repeated cleaning result by micro bubble

[Figure 9] shows the result of repeatedly cleaning hundreds of components using the semiconductor cleaning device using the micro nanobubble of the present invention. Regardless of the number of treatments, the degree of cleaning remains almost constant. On the other hand, when washing | cleaning using an alkaline detergent with the same apparatus, the cleanliness deteriorates with the batch water.

Thus, the micro nanobubble cleaning of the semiconductor cleaning device using the micro nanobubble of the present invention has a high cleaning effect and a function of oil separation, and it is confirmed that good repeatability can be obtained based on the function.

[Figure 10] shows the trend of the cleanliness when the micro-nanobubble is applied by modifying the existing cleaning device of the factory together with the cleanliness range when using the conventional alkali cleaner.

In the micro nanobubble cleaning of the present invention, the cleanliness is 10 ug / cm 2 or less, and the cleanliness is stable for over 1 month without showing any change.

The right side of [Figure 10] shows the oil and water separated from the washed water after 6 months of continuous use.

It can be seen that the washing water maintains complete transparency even after cleaning tens of thousands of parts due to the complete separation performance by the micro nanobubbles of the present invention.

배출량환산은 약1000분의 1, 알칼리세정제와 비교해서는

배출량은 약 12분의 1이다. 국내의 세척제세정에 본 발명의 마이크로 나노버블 세정을 적용했다고 가정하면, 약40만톤의

배출량의 삭감이 가능하게 된다. 이처럼 막대한 환경부하 저감효과와 더불어, 세척제 세정과 비교해서 운용비용은 10분의 1이하라는 실적이 보고되어 있다. 게다가, 안정적인 세정공정의 구축에 의한 제품품질의 향상도 실현되어 있다.
When the semiconductor cleaning method using the micro nanobubble of the present invention is applied to the cleaning process of the organic solvent (solvent),

Emission conversion is about 1/1000, alkali cleaner

Emissions are about one twelve. Assuming that the micro nanobubble cleaning of the present invention is applied to domestic detergent cleaning, about 400,000 tons of

Reduction of discharge becomes possible. In addition to the enormous environmental load reduction effect, it is reported that the operating cost is less than one tenth as compared to cleaning the detergent. In addition, improvement of product quality is also realized by establishing a stable cleaning process.

[ Figure 10] Cleaning Results and Condition of Cleaning Water in Factory

The 21st century is called the century of the environment, and the handling of environmental load reduction in the manufacturing process of the electronics field is becoming more and more important.

In particular, the cleaning process consumes a large amount of detergent to remove a large amount of organic pollution. The semiconductor cleaning method using the micro nanobubbles of the present invention is characterized by high cleaning ability and high oil-separating ability based on a large surface area, and is expected to greatly reduce environmental load and cost.

As described above, the semiconductor cleaning method using the micro nanobubbles of the present invention is a new interface control type cleaning method which is completely different from the conventional method. Since then, the research and development is increasingly active, it is expected to be widely used not only for degreasing cleaning but also for fields requiring high cleanliness with high environmental load such as semiconductors and liquid crystals. We are convinced that it will contribute to the protection of the global environment as a standard cleaning method for low environmental load in the future.

In addition, the semiconductor cleaning apparatus using the micro nanobubble of the present invention, micro nanobubble generator (10) which is installed in the first and second cleaning tanks (20, 20), respectively, to create a micro nanobubble of 5nm or less to spray to the object to be cleaned And, by spraying the micro nanobubble made of functional water on the surface of the semiconductor substrate, the first cleaning tank 20, which is a cleaning section for cleaning the oil first, and simultaneously spraying bubbles and AIR on the cleaned semiconductor substrate (2 Air jet cleaning) Located between the secondary washing tank 30, which is a washing section for removing particles and washing the oil secondaryly, and the primary washing tank 20 and the secondary washing tank 30, cold and cold air ( 60) (CDA: Cool Dry Air) to form and separate an air curtain wall to prevent the movement of water, and the primary air curtain 61, and a rinse bath 40 to spray and rinse deionized water onto the cleaned semiconductor substrate. And, the second washing tank 30 and the rinse tank 40 The secondary air curtain 62 which prevents the movement of water by forming and separating the air curtain wall between them, the drying tank 50 which air-rinses the rinsed semiconductor substrate, the rinse tank 40 and the drying furnace ( It is composed of a third air curtain 63 to prevent the movement of water by forming and separating the air curtain wall between the 50).

The micro nanobubble generator 10 is a functional water obtained by mixing ozone (O ₃ ) and nitrogen (N ₂ ) with a mixing pump 11 in deionized water (DIW) without using a cleaning solution. After passing through the nanobubble generator 12 to make a micro-nanobube of 5nm or less and stored in the micro-nanobubble tank 13 and sprayed to the object to be cleaned by the injection pump (14).

The first washing tank 20 has an organic material drainage passage 21 in which organic matter floats on one side and flows along with water flow, and has a partition 22a through which a lower portion passes, and is connected to an organic water drainage passage 21 to provide oil. Regeneration of the water by separation and having an overflow tank 22 for supplying the regenerated water to the mixing pump 11 through the filter (22b), a port for exhausting ozone (O ₃ ) and nitrogen (N ₂ ) (23) and the nanobubble is injected into the injection pump 14 of the micro nanobubble generator (10) to the cleaning space is bubble cleaning of the semiconductor substrate to be cleaned, the front end to enter the semiconductor substrate to be cleaned An object detecting proximity sensor S1 is installed, and the speed adjusting conveyor motor C1 can individually operate the conveying speed of the semiconductor substrate to be cleaned by receiving the signal of the object detecting proximity sensor S1. Speed controlled A conveyor (V1) is provided.

The second washing tank 30 has an organic material drainage channel 31 in which organic matter floats on one side and flows in accordance with the water flow, and is drained, and is connected to the organic water drainage path 31 so that water is regenerated by oil separation. The micro nanobubble generator having an overflow tank (32) for supplying water to the mixing pump (11) through the (), and has a port (33) for exhausting ozone (O ₃ ) and nitrogen (N ₂ ) The nanobubble is injected into the injection pump 14 of FIG. 10, and clean dry air (CDA) is injected into the object to be cleaned (two-fluid jet cleaning) to clean the organic substance of the semiconductor substrate to be cleaned. The cleaning space for removing particles, the front end portion is provided with an object sensing proximity sensor (S2) for detecting the entry of the semiconductor substrate to be cleaned, and receives the signal of the object sensing proximity sensor (S2) of the semiconductor substrate to be cleaned Speed that can operate feed speed separately Speed is controlled by the motor jeolyong conveyor (C2) is provided with a conveyor (V2) is operated.

The primary air curtain 61 is positioned between the primary cleaning tank 20 and the secondary cleaning tank 30 to be cleaned in a next cleaning section so that contaminated water does not pass over the clean air (CDA). Clean air (60) to form an air curtain wall to separate the space.

The rinse bath 40 is a washing space in which deionized water (DIW) is sprayed to wash the semiconductor substrate to be cleaned, and an object sensing proximity sensor capable of detecting an entry of the semiconductor substrate to be cleaned at the front end thereof. Conveyor (V3) is installed, the speed is controlled by a speed adjusting conveyor motor (C3) that can be operated separately by the object sensing proximity sensor (S3) signal to the transfer speed of the semiconductor substrate to be cleaned. ) Is provided.

The secondary air curtain 62 is positioned between the secondary cleaning tank 30 and the rinse tank 40 to be cleaned in the next cleaning section so that contaminated water does not pass over the clean dry air (CDA). Air curtain wall to form a space (60).

The drying tank 50 is a drying space for drying the semiconductor substrate to be cleaned with a clean dry air (CDA) 60, and a rear end portion of the drying tank 50 may detect entry of the semiconductor substrate to be cleaned. The object detecting proximity sensor S4 is installed. At this time, a conveyor (V4) is operated by the speed control by a speed adjusting conveyor motor (not shown) that can operate the transfer speed of the semiconductor substrate to be cleaned separately in response to the signal of the object detecting proximity sensor (S4). .

The third air curtain (63) is located between the rinse tank (40) and the drying tank (50) and is cleaned in the next cleaning section so that contaminated water does not pass over the clean dry air (CDA; Clean Dry Air) ( 60) form an air curtain wall to separate the space.

In the semiconductor cleaning apparatus using the micro nanobubbles of the present invention, the deionized water (DIW), ozone (O ₃ ), and nitrogen (N ₂ ) are mixed in the micro nanobubble generator 10 (Mixing). When it is put into a pump), bubbles of 0.1 mm to 5 mm are generated, and when they pass through the bubble generator 12 that generates micro nano bubbles, the nano bubble tank 13 continues to circulate while the nano nano bubbles are circulated. Is made. The micro nanobubble tank 13 filled with the micro nanobubbles has four sensors (eg, HH, H, L, and LL) sensed according to water height. The HH sensor detects the overflow of the tank, the LL sensor indicates that there is no water in the tank, the L sensor indicates the replenishment of water, and the H sensor indicates that the water in the tank is adequate and maintains a stable level. It is possible to start the bubble cleaning through the injection pump (14).

When the semiconductor substrate enters the conveyor belt V1 through the first cleaning tank 20, which is the first cleaning section, the object detecting proximity sensor S1 detects this and operates the injection pump 14 to the semiconductor substrate to be cleaned. By spraying the micro nanobubbles, the oil (organic matter) of the substrate is cleaned with the nanobubbles. The speed of the conveyor belt (V1) is appropriately controlled by the speed adjusting conveyor motor (C1) according to the situation at that time fast or slow.

The first air curtain 61 is installed between the first cleaning tank 20 and the second cleaning tank 30 so that contaminated water or oil (organic matter) used for cleaning in the first cleaning tank 20 is removed. It is blocked to be delivered to the second washing tank (30).

When the semiconductor substrate enters the conveyor belt V2 of the second cleaning section 30 which is the second cleaning section, the object detecting proximity sensor S2 detects this, and in this case, the injection pump 14 and the air (CDA) 60 ) Is simultaneously supplied and operated to clean particles (PARTICLE) while removing oil (organic matter) from the substrate in a secondary form using nanobubbles and air 60 to the semiconductor substrate to be cleaned.

A second air curtain 62 is installed between the second cleaning tank 30 and the rinse tank 40 to rinse the contaminated water or oil (organic substance) and particles used for cleaning in the second cleaning tank 30. It is blocked from being delivered to the tank 40.

When the semiconductor substrate enters the conveyor belt V3 of the rinse bath 40, which is the third cleaning section, the object detecting proximity sensor S3 detects this, and at this time, the bubble spray pump is stopped and rinsed using deionized water (DIW). Will be

The third air curtain 63 is installed between the rinse tank 40 and the drying tank 50 to block the contaminated water used to rinse from the rinse tank 40 to the drying tank 50.

Then, when the semiconductor substrate cleaned with water enters the conveyor belt V4 of the drying tank 50, which is the fourth section, it is dried by an air knife, and the substrate is gradually moved to the conveyor belt V4. When the object sensing proximity sensor S4 installed at the rear side is sensed, all processes are stopped and thus the cleaning process of the object to be cleaned including drying is completed.

In the semiconductor cleaning process, unlike the semiconductor cleaning method in which a large amount of cleaning agent is consumed to remove a large amount of organic pollution, the present invention is environmentally friendly and does not use a cleaning agent that is regulated, and thus can realize sufficient cleaning effect. In addition, the cost savings due to the non-use of the cleaner and the post-cleaning waste water treatment cost may also be reduced.

Thus, the semiconductor cleaning method of the present invention using the micro nanobubbles is a new interface-controlled cleaning method that is completely different from the conventional method. It is expected to be widely used in the field where high environmental load and high cleanliness are required. In the future, we are confident that it will contribute to the global environmental protection as a standard semiconductor cleaning method with low environmental load.

10: micro nano bubble generator 11: mixing pump
12: Bubble Generator 13: Micro Nano Bubble Tank
14: injection pump
20: first washing tank 21: organic wastewater
22: overflow 22a: bulkhead
22b: filter 23: port
30: second washing tank 31: organic wastewater
32: overflow 32a: bulkhead
32b: filter 33: port
40: rinse tank
50: drying tank
60: cool dry air (CDA) 61: primary air curtain
62: 2nd air curtain 63: 3rd air curtain
C1, C2, C3: Conveyor Motor for Speed Control
S1, S2, S3, S4: Object Detection Proximity Sensor
V1, V2, V3, V4: Conveyor Belt

Claims (9)

A functional water generation process of obtaining a functional water obtained by mixing ozone (O ₃ ) and nitrogen (N ₂ ) in deionized water (DIW) without using a cleaning solution; The deionized water (DIW), ozone (O ₃ ), and nitrogen (N ₂ ), which are functional water, were put into a mixing pump and operated to obtain bubbles having a size of 0.1 mm to 5 mm, which were passed through a micro nanobubble generator to 5 nm. A nanobubble generation process for making the following micro nanobubbles; A method of cleaning a semiconductor using micro nanobubbles for spraying or spraying the micro nanobubbles on or below the surface of a semiconductor substrate to clean organic substances on the surface of the semiconductor substrate;
When the surface of the semiconductor substrate is cleaned inside the cleaning tank by the micro nanobubbles, after cleaning, particles are collected under water, and organic matter floats upwards of the water to be discharged to one side by a flow and drained. A method of cleaning a semiconductor using micro nanobubbles, characterized in that the organic material is prevented from reattaching to the semiconductor substrate contained in the top of the tank and pulled upward. delete delete A microbubble of 5 nm or less is made by passing a nanobubble generator through a nanobubble generator by mixing functional water mixed with ozone and nitrogen in a deionized water (DIW) without using a cleaning solution. A nanobubble generator; A nano-bubble discharge port of the micro nanobubble generator is installed on at least one of the bottom, side or top of the microbubble generator to spray or sprinkle to flow naturally or below the surface of the semiconductor substrate to clean particles and organic matter on the surface of the semiconductor substrate A semiconductor cleaning apparatus using micro nanobubbles provided;
When the surface of the semiconductor substrate is cleaned inside the cleaning tank by the micro nanobubbles, particles are collected downward in the water, and organic matter floats upward and flows downward to the bottom by the water flow. An organic water drainage path for preventing reattachment of organic matter is formed on one side of the cleaning tank, and the organic water drainage path is separated into multiple stages by a partition wall and supplied to an overflow tank where water is regenerated by oil separation. A semiconductor cleaning device using micro nanobubbles, characterized in that water is recycled through a filter and supplied to a mixing pump of a micro nanobubble generator. delete 5. The method of claim 4,
The cleaning tank;
The organic nano-floor generator has an organic tank in which one side floats and flows according to the water flow, and is connected to the organic drainage channel. A first cleaning tank in which the nanobubbles are sprayed by the injection pump to perform bubble spray cleaning;
The organic nano-floor generator has an organic tank in which one side floats and flows according to the water flow, and is connected to the organic drainage channel. A second washing tank in which a nanobubble is injected into the injection pump and sprays clean dry air (CDA) to perform two-fluid jet cleaning;
And a first air curtain positioned between the first cleaning tank and the second cleaning tank and forming a curtain wall with clean dry air (CDA) so that the water cleaned in the next cleaning section does not fall over. A semiconductor cleaning device using micro nanobubbles. The method of claim 4 or 6;
After the cleaning bath;
A second air curtain forming a curtain wall with clean dry air (CDA) so that the water cleaned in the next cleaning section does not fall;
A rinse bath for cleaning the semiconductor substrate by spraying DI water;
A third air curtain forming a curtain wall with clean dry air (CDA) so that the water cleaned in the next cleaning section does not fall;
A semiconductor cleaning device using micro nanobubbles further comprising a drying bath for drying a semiconductor substrate with clean dry air (CDA). The method of claim 7;
The first cleaning tank, the second cleaning tank and the rinsing tank are each provided with an object sensing proximity sensor capable of sensing the entry of the substrate, and the transfer speed of the semiconductor substrate is received by the object sensing proximity sensor for each cleaning section. A semiconductor cleaning device using micro nanobubbles each provided with a conveyor motor for controlling a conveyor speed so as to operate separately. delete

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