KR101207043B1 - Coating treatment apparatus, coating treatment method and computer readable storage medium - Google Patents

Abstract

An object of the present invention is to provide a coating treatment apparatus capable of adjusting the viscosity of a resist liquid inline without limiting the consumption of unnecessary resist liquid as much as possible and reducing the throughput.

The resist coating device (CT) 23a mixes a high concentration coating liquid and a solvent to form a dilution coating liquid diluted to a predetermined concentration, and a coating liquid discharge which forms a coating film on a substrate by discharging the diluted coating liquid. To the mechanism 14, the monitor coating mechanism 79 which blows in a dilution coating liquid, and performs monitor application, the film thickness measuring apparatus 85 which measures the film thickness of the coating film which monitor applied, and the monitor application mechanism 79 Control whether or not the mixing ratio of the high concentration coating liquid and the solvent is within a predetermined range based on the monitored parameters, and when determining that the mixing ratio is not within the predetermined range, controlling to adjust the mixing ratio of the high concentration coating liquid and the solvent. Mechanisms 90 and 92 are provided.

Resist coating apparatus, coating liquid discharge mechanism, monitor coating mechanism, control mechanism, film thickness measuring mechanism

Description

COATING TREATMENT APPARATUS, COATING TREATMENT METHOD AND COMPUTER READABLE STORAGE MEDIUM

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic plan view showing a resist coating and developing processing system including a resist coating apparatus according to an embodiment of the present invention.

2 is a schematic plan view showing a resist coating apparatus according to an embodiment of the present invention.

3 is a cross-sectional view showing a schematic configuration of a substrate transfer mechanism of a resist coating apparatus according to an embodiment of the present invention.

4 is a schematic perspective view showing a resist supply nozzle of a resist coating device according to an embodiment of the present invention.

Fig. 5 is a schematic configuration diagram showing a resist liquid supply system in a resist coating apparatus according to an embodiment of the present invention together with a control system.

6 is a flowchart for explaining a procedure of a resist liquid coating process.

7 (a) to 7 (c) show a procedure of measuring a film thickness of a monitor coating film in a dry state by applying a diluted resist solution to a roller.

8 (a) to 8 (c) show a procedure of measuring a film thickness of a monitor coating film in a dry state by monitoring and applying a diluted resist liquid to a glass substrate.

Fig. 9 is a diagram showing an example of an apparatus for measuring a film thickness of a monitor coating film in a dry state by applying a dilution resist on a moving belt.

Fig. 10 is a diagram showing another example of an apparatus for measuring a film thickness of a monitor coating film in a dry state by applying a dilution resist on a moving belt.

11 (a) to 11 (c) show a procedure for obtaining a film thickness of the monitor coating film from the time-dependent change in the film thickness of the monitor coating film in the wet state by applying the diluting resist liquid to the roller.

12 (a) to 12 (c) show a procedure for obtaining a film thickness of a monitor coating film from a time-dependent change in the film thickness of the monitor coating film in a wet state by applying a diluted resist liquid onto a glass substrate.

Fig. 13 shows an example of an apparatus for measuring a film thickness of a monitor coating film in a wet state by monitoring and applying a diluting resist on a moving belt.

14 is a graph showing an example of changes over time in the wet film thickness.

<Explanation of symbols for the main parts of the drawings>

12: stage

13: substrate transfer mechanism

14: resist liquid discharge nozzle

23a: resist coating apparatus (CT)

61: high concentration resist liquid tank

62, 65: piping

63: high concentration resist liquid pump

64: solvent tank

66: solvent pump

67: confluence block

68: static mixer

69: diluted resist supply pipe

69c: circulation pipe

70: mixing part

71a, 71b: buffer tank

74: resist liquid supply pump

75a, 75b, 75c: Valve (switching mechanism)

76: 3-way valve

77: buffer tank for monitor

78: piping for the monitor

79: discharge nozzle for coating the monitor

80: monitor application pump

82: return piping

82c: circulation pipe

84: circulation pump

85: film thickness measuring device

90 controller

92: process controller

94: memory

100: resist coating and developing processing system

101: belt

102, 103: Roller

106: reduced pressure drying device

110: heater

G: glass substrate for LCD

[Document 1] Japanese Unexamined Patent Publication No. 10-242045

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a coating processing apparatus and a coating processing method for applying a coating liquid such as a resist liquid to a substrate such as a glass substrate for a liquid crystal display device, and a computer readable storage medium.

For example, in the manufacturing process of a liquid crystal display device (LCD) and a semiconductor device, the predetermined circuit pattern is formed in a glass substrate or a semiconductor wafer using photolithography technique. In this photolithography technique, after the coating process which supplies a resist liquid to a glass substrate and forms a coating film, it is dried, and then exposure processing and image development are performed in order.

Among them, in the resist coating process, a rotary coating is formed by rotating a glass substrate or the like, dropping the resist liquid from the top of the rotation center to the substrate surface, and spreading the resist liquid on the entire surface of the substrate by centrifugal force, and the resist liquid from the slit nozzle. Slit coating is used to form a resist film having a predetermined film thickness by linearly moving the substrate and the nozzle while discharging the film.

In any application method, the film thickness and the like change depending on the viscosity of the resist liquid, and the viscosity of the resist liquid is determined by the mixing ratio of the resist and a solvent such as thinner applied thereto. It is aimed at changing the compounding ratio of thinner and performing an appropriate application | coating process.

However, in the case of using a resist liquid having a different blending ratio, it is necessary to replace the tank for each tank, and a tank of multiple resist liquids having different viscosities must be prepared in advance in order to serve a request for changing the resist film thickness. Moreover, even if the resist liquid of the same viscosity is used, the resist film of the same film thickness may not necessarily be obtained by the difference of daily environmental conditions. In such a case, it is required to cope by exchanging with a resist liquid having a slightly different viscosity, but such fine adjustment was difficult.

As a technique corresponding to such a problem, Patent Literature 1 discloses a technique in which a resist and a solvent are mixed in-line at a predetermined ratio, and thus the mixed resist liquid is supplied to a target substrate such as a semiconductor wafer through a nozzle. Proposed.

However, Patent Document 1 does not disclose a means for verifying whether or not the formulation is actually correct, and if the formulation deviates from a predetermined one, and the film thickness of the first substrate to be processed deviates from a predetermined range. In addition, the resist used for the substrate to be processed is wasted, and the resist liquid present in the pipe 88 shown in FIG. 4 needs to be discarded and the compounding is executed again. In particular, glass substrates for LCDs have become increasingly large in recent years, and large ones of 2 m per side have appeared, and such a waste of resist liquid cannot be ignored. In addition, when such a retry is performed, that much time is wasted and the throughput decreases.

[Patent Document 1] Japanese Patent Application Laid-Open No. 10-242045

This invention is made | formed in view of such a situation, and the coating processing apparatus and coating processing method which can adjust the viscosity of a resist liquid in-line without actively suppressing consumption of an unnecessary resist liquid and reducing a throughput, and such An object of the present invention is to provide a computer-readable storage medium for carrying out the coating treatment method.

In order to solve the said subject, in the 1st viewpoint of this invention, the high concentration coating liquid sending part which sends a high concentration coating liquid, the solvent sending part which sends a solvent, and the said coating liquid sending part, and the solvent sending part are connected by piping. A mixing portion for mixing the high concentration coating liquid and the solvent to form a diluted coating liquid diluted to a predetermined concentration, a coating liquid discharge mechanism for discharging the diluted coating liquid to form a coating film on a substrate, and discharging the coating liquid from the mixing portion. A dilution coating liquid supply mechanism for supplying the dilution coating liquid to the mechanism, a monitor portion for taking in the dilution coating liquid formed in the mixing section and monitoring a parameter that is an index of the mixing ratio of the high concentration coating liquid and the solvent, and the mixing A switching mechanism for switching the dilution coating liquid formed in the part on the coating liquid discharge mechanism side and the monitor side, and the monitor unit It is judged whether or not the mixing ratio of the high concentration coating liquid and the solvent is within a predetermined range on the basis of the parameters, and when it is determined that the mixing ratio is not within the predetermined range, the high concentration coating liquid sent out from the high concentration coating liquid sending part and A control mechanism for adjusting the mixing ratio of the solvent sent out from the solvent sending part, and controlling the delivery of the diluted coating liquid to the coating liquid discharge mechanism side by operating the switching mechanism when the mixing ratio is within a predetermined range. It is provided with a coating treatment apparatus comprising a.

In this case, the thickness of the coating film of the said diluted coating liquid can be employ | adopted as said parameter.

In the second aspect of the present invention, the high concentration coating liquid sending part for sending the high concentration coating liquid, the solvent sending part for sending the solvent, and the coating liquid sending part and the solvent sending part are connected to each other in a pipe to mix the high concentration coating liquid and the solvent. And supplying a mixing portion made of a diluted coating liquid diluted to a predetermined concentration, a coating liquid discharging mechanism for discharging the diluting coating liquid to form a coating film on the substrate, and a diluted coating liquid from the mixing portion toward the coating liquid discharging mechanism. A dilution coating liquid supplying pipe, a dilution coating liquid supplying mechanism for supplying a dilution coating liquid to the coating liquid discharging mechanism via the supply pipe, and a dilution coating liquid are blown in from the middle of the supply pipe, and the dilution coating liquid is supplied. The dilution coating liquid circulation part which returns and circulates to piping, and the destination of the said dilution coating liquid to the said coating liquid discharge mechanism side, and the said coating liquid circulation part. A switching mechanism for switching over the monitor; a monitor coating mechanism for taking out the diluted coating liquid from the diluted coating liquid circulating part and performing the monitor application while the switching mechanism is configured so that the destination of the diluted coating liquid is the diluted coating liquid circulating part; It is judged whether the mixing ratio of the said high concentration coating liquid and a solvent is a predetermined range from the film thickness measuring apparatus which measures the thickness of the coating film apply | coated by the said monitor coating mechanism, and the film thickness measurement by the said film thickness measuring apparatus. When it is determined that the mixing ratio is not within a predetermined range, the high concentration coating liquid and the solvent sending unit are sent out from the high concentration coating liquid sending unit while leaving the dilution coating liquid circulation unit as it is. When the mixing ratio with the solvent is adjusted and the mixing ratio is within a predetermined range And a control mechanism for operating the switching mechanism to control delivery of the diluted coating liquid to the coating liquid discharge mechanism side.

In the second aspect of the present invention, the mixing section can be configured to have a confluence block for converging the high concentration coating liquid and the solvent in a turbulent state, and a static mixer provided downstream of the confluence block. As the coating liquid discharging mechanism, one having a slit corresponding to the width of the substrate and discharging the diluted coating liquid can be used while maintaining a relatively linear motion with the substrate at a constant interval. The switching mechanism further includes a first open / close valve for supplying and blocking a dilution coating liquid from the dilution coating liquid supply pipe to the dilution coating liquid circulation section, and from the dilution coating liquid supply pipe to the dilution coating liquid supply mechanism. It can be set as what has a 2nd opening / closing valve which supplies and cut | disconnects a dilution coating liquid.

The dilution coating liquid supply mechanism can be configured to have a buffer tank for temporarily storing the dilution coating liquid, and a supply pump for supplying the dilution coating liquid from the buffer tank to the coating liquid discharge mechanism. In this case, it is preferable that the said buffer tank stores the diluted coating liquid equivalent to one board | substrate, The said diluted coating liquid supply mechanism has two said buffer tanks, and one of these two buffer tanks is said coating liquid. It is preferable to comprise so that it may be connected by the discharge mechanism.

The monitor coating mechanism is provided with a monitor pipe for taking out the dilution coating liquid from the dilution coating liquid circulation section, a discharge nozzle for coating application provided at a distal end of the monitor piping, and the dilution coating liquid provided on the monitor piping. It can be set as the structure which has a monitor coating pump which supplies a diluted coating liquid from a circulation part to the said discharge coating nozzle for coating, and a to-be-coated object to which the said diluted coating liquid is apply | coated.

Further, the coating liquid circulation unit is provided with a monitor buffer tank for temporarily storing a dilution coating liquid for carrying out monitor application, a return pipe from the monitor buffer tank to the supply pipe, and a dilution coating provided in the return pipe. It can be set as the structure which has a circulation pump which circulates a liquid. In this case, the monitor application mechanism is provided in the monitor pipe for taking out the diluted coating liquid from the monitor buffer tank, the discharge nozzle for coating the monitor provided at the tip of the monitor pipe, and the monitor pipe. It can be set as the structure which has a monitor coating pump which supplies a diluted coating liquid from the dilution coating liquid circulation part to the said discharge coating nozzle for coating application.

A roller can be used as the to-be-coated object of the monitor application mechanism, and the monitor can be applied while rotating the roller. Further, a monitor substrate can be used as the object to be coated of the monitor application mechanism, and monitor application can be applied to the monitor substrate while causing relative movement between the monitor application discharge nozzle and the monitor substrate. have. Moreover, the belt wound by several conveyance roller can be used as said to-be-coated object of the said monitor application mechanism, and monitor application | coating can be performed, moving a belt. In this case, it is preferable to perform the discharge of the dilution coating liquid from the discharge nozzle for monitor application directly above any one of the conveyance rollers. Moreover, it is preferable to arrange | position so that a film thickness measurement may be performed directly on any one said said conveyance roller.

In a third aspect of the present invention, a step of mixing a high concentration coating liquid and a solvent to form a dilution coating liquid diluted to a predetermined concentration, and a dilution coating liquid formed in the mixing section is blown to determine the mixing ratio of the high concentration coating liquid and the solvent. A step of monitoring a parameter serving as an index, a step of determining whether a mixing ratio of the high concentration coating liquid and a solvent is within a predetermined range based on the monitored parameter, and determining that the mixing ratio is not within a predetermined range And adjusting the mixing ratio of the high concentration coating liquid and the solvent to the coating liquid discharge mechanism, and supplying the diluted coating liquid to the coating liquid discharge mechanism when the mixing ratio is within a predetermined range. And diluting coating liquid is applied onto the substrate by discharging the diluted coating liquid. During the next substrate, determining whether the mixing ratio of the high concentration coating liquid and the solvent is within a predetermined range, and when the mixing ratio is not within the predetermined range, mixing the mixing ratio of the high concentration coating liquid and the solvent A coating treatment method is provided, characterized by performing a step of adjusting.

In this case, the thickness of the coating film of the said diluted coating liquid can be used as said parameter.

In a fourth aspect of the present invention, a process of mixing a high concentration coating liquid and a solvent to form a diluted coating liquid diluted to a predetermined concentration, taking a diluted coating liquid formed in the mixing section, and performing a monitor coating, and a monitor application A step of measuring the film thickness of the coating film performed, a step of determining whether or not the mixing ratio of the high concentration coating liquid and the solvent is in a predetermined range from the result of the film thickness measurement, and in the case of determining that the mixing ratio is not in the predetermined range. And adjusting the mixing ratio of the high concentration coating liquid and the solvent to the coating liquid discharge mechanism, and supplying the diluted coating liquid to the coating liquid discharge mechanism when the mixing ratio is within a predetermined range. A process of applying the dilution coating liquid onto the substrate by discharging the same, and applying the dilution coating liquid to the substrate. Taking a dilution coating liquid formed in the mixing section and performing a monitor coating for the next substrate, a step of measuring the film thickness of the coating film subjected to the monitor coating, and the high concentration coating liquid from the result of the film thickness measurement. Performing a step of judging whether or not the mixing ratio of the solvent is within a predetermined range, and adjusting the mixing ratio of the high concentration coating liquid and the solvent when determining that the mixing ratio is not within the predetermined range. Provide a treatment method.

In the fourth aspect, the monitor application can be performed by discharging the diluting coating liquid from the discharge nozzle for application of the monitor to the roller while rotating the monitor roller. Further, the monitor application can be performed by discharging the diluted coating liquid from the monitor application discharge nozzle to the monitor substrate while causing relative movement between the monitor application discharge nozzle and the monitor substrate. In addition, the said monitor application | coating can be performed by discharging a diluting coating liquid from the discharge nozzle for monitor application | coating to the said belt, moving the belt wound by the some conveyance roller. In this case, it is preferable that the discharge of the diluting coating liquid from the monitor application discharge nozzle in the application of the monitor is performed directly above any one of the conveyance rollers. Moreover, as for the process of measuring the film thickness of a coating film, it is preferable to perform a film thickness measurement directly on any one said conveyance roller.

In the fourth aspect, the film thickness measurement can be performed after drying the coating film formed by the monitor coating. In the film thickness measurement, the film thickness may be calculated based on the aging change in the film thickness of the coating film formed by the monitor application.

In a fifth aspect of the present invention, a computer readable storage medium storing software for executing a control program on a computer is provided. A computer readable storage medium is provided.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic plan view of a resist coating and developing processing system applied to resist coating and development after exposure of a glass substrate for an LCD equipped with a coating apparatus according to an embodiment of the present invention.

The resist coating and developing processing system 100 includes a cassette station 1 for loading a cassette C for accommodating a plurality of LCD glass substrates (hereinafter simply referred to as substrates) G and a substrate G. Interface station 3 for transferring substrate G between a processing station 2 having a plurality of processing units for carrying out a series of processes including resist application and development and an exposure apparatus 4 The cassette station 1 and the interface station 3 are disposed at both ends of the processing station 2, respectively. In Fig. 1, the longitudinal direction of the resist coating and developing processing system 100 is referred to as the Y direction in the X direction and the direction orthogonal to the X direction on the plane.

The cassette station 1 is provided with the conveying apparatus 11 for carrying in / out of the board | substrate G between the loading stand 9 and the processing station 2 which can load the cassette C side by side in the Y direction. The cassette C is conveyed between the mounting table 9 and the outside. The conveying apparatus 11 has the conveying arm 11a, and can move on the conveyance path 10 provided along the Y direction which is the arrangement direction of the cassette C, The conveyance arm 11a and the cassette C and Loading and unloading of the substrate G is performed between the processing stations 2.

The processing station 2 basically has two parallel rows of conveying lines A and B for conveying the substrate G, which are drawn in the X direction, and interfaces from the cassette station 1 side along the conveying line A. The scrub cleaning processing unit (SCR) 21, the first thermal processing unit section 26, the resist processing unit 23, and the second thermal processing unit section 27 are arranged toward the station 3. .

Further, along the conveying line B, the second thermal processing unit section 27, the developing processing unit (DEV) 24, and the i-ray UV irradiation unit (i-) are directed from the interface station 3 side toward the cassette station from the side. UV) 25 and third thermal treatment unit section 28 are arranged. A part of the scrub cleaning processing unit (SCR) 21 is provided with an excimer UV irradiation unit (e-UV) 22. In addition, the excimer UV irradiation unit (e-UV) 22 is installed to remove organic matter of the substrate G prior to the scrubber cleaning, and the i-ray UV irradiation unit (i-UV) 25 is subjected to decolorization of development. Installed to do

In the scrub cleaning processing unit (SCR) 21, the cleaning process and the drying process are performed while the substrate G is conveyed in a substantially horizontal posture. In the development processing unit (DEV) 24, the developer G is applied, rinsed, and dried in order while the substrate G is conveyed in a substantially horizontal posture. In these scrub cleaning processing units (SCR) 21 and the developing processing unit (DEV) 24, the conveyance of the board | substrate G is performed by pulley conveyance or belt conveyance, for example, and the carry-in port of the board | substrate G is carried out. And the exit port is provided on the short sides facing each other. In addition, the conveyance of the board | substrate G to the i line | wire UV irradiation unit (i-UV) 25 is performed continuously by the same mechanism as the conveyance mechanism of the image development processing unit (DEV) 24. FIG.

The resist processing unit 23 supplies the resist liquid and forms the coating film while conveying the substrate G in a substantially horizontal attitude, and the substrate G in a reduced pressure atmosphere in a resist coating apparatus (CT) 23a. It exposes the pressure reduction drying apparatus (VD) 23b which evaporates the volatile component contained in the coating film formed on the board | substrate G, and dries the coating film by exposing this. The resist coating apparatus (CT) 23a is explained in full detail later.

The first thermal processing unit section 26 has two thermal processing unit blocks (TB) 31, 32 formed by stacking thermal processing units for performing thermal processing on the substrate G, and the thermal processing unit block ( TB) 31 is provided on the scrub cleaning processing unit (SCR) 21 side, and the thermal processing unit block (TB) 32 is provided on the resist processing unit 23 side. The 1st conveyance apparatus 33 is provided between these two thermal processing unit blocks (TB) 31 and 32. FIG.

The thermal processing unit block (TB) 31 includes a pass unit for transferring the substrate G in order from below, two dewatering bake units for dehydrating the baking process for the substrate G, and the substrate G. It has the structure in which the adhire treatment unit which performs a hydrophobization process is laminated | stacked in four steps. In addition, the thermal processing unit block (TB) 32 includes a pass unit for sequentially transferring the substrate G from below, two cooling units for cooling the substrate G, and a hydrophobization treatment for the substrate G. The adhesion processing unit to be implemented has a configuration in which it is stacked in four stages.

The 1st conveying apparatus 33 receives the board | substrate G from the scrub cleaning processing unit (SCR) 21 via the pass unit, carrying in / out of the board | substrate G between the said thermal processing units, and the pass unit. The transfer of the substrate G to the resist processing unit 23 is performed.

The 1st conveying apparatus 33 is movable up and down, back and forth, and swiveling movement, and is able to access any unit among the thermal processing unit blocks TB (31, 32).

The second thermal processing unit section 27 has two thermal processing unit blocks (TB) 34, 35 formed by stacking thermal processing units for performing thermal processing on the substrate G, and the thermal processing unit block ( TB) 34 is provided on the resist processing unit 23 side, and a thermal processing unit block (TB) 35 is provided on the developing processing unit (DEV) 24 side. And the 2nd conveying apparatus 36 is provided between these two thermal processing unit blocks (TB) 34 and 35. As shown in FIG.

The thermal processing unit block (TB) 34 has a configuration in which a pass unit for transferring the substrate G in order from the bottom and three pre-baking units for pre-baking the substrate G are stacked in four stages. have. In addition, the thermal processing unit block (TB) 35 performs a pre-baking process for the pass unit which transfers the board | substrate G in order from below, the cooling unit which cools the board | substrate G, and the board | substrate G. Two prebaking units are laminated in four stages.

The 2nd conveying apparatus 36 receives the board | substrate G from the resist processing unit 23 via the pass unit, carrying in / out of the board | substrate G between the said thermal processing units, and the developing processing unit via a pass unit ( The transfer of the substrate G to the DEV 24 and the transfer of the substrate G to the extension cooling stage (EXT COL) 44 which is a substrate transfer portion of the interface station 3 described later are performed. Moreover, the 2nd conveyance apparatus 36 has the same structure as the 1st conveyance apparatus 33, and can access any unit among the thermal processing unit blocks (TB) 34 and 35. FIG.

The third thermal processing unit section 28 has two thermal processing unit blocks (TB) 37, 38 formed by stacking thermal processing units for thermal processing on a substrate G, and the thermal processing unit blocks ( TB) 37 is provided on the developing processing unit (DEV) 24 side, and the thermal processing unit block (TB) 38 is provided on the cassette station 1 side. And the 3rd conveying apparatus 39 is provided between these two thermal processing unit blocks (TB) 37 and 38. As shown in FIG.

The thermal processing unit block (TB) 37 has a configuration in which a pass unit for transferring the substrate G in order from the bottom and a three post bake unit for performing the post bake process on the substrate G are stacked in four stages. Have In addition, the thermal processing unit block (TB) 38 includes a post bake unit, a pass cooling unit that transfers and cools the substrate G in order from the bottom, and two posts that perform the post bake process on the substrate G. The baking unit has the structure laminated | stacked in four steps.

The 3rd conveying apparatus 39 receives the board | substrate G from the i line | wire UV irradiation unit (i-UV) 25 via a pass unit, carrying in / out of the board | substrate G between the said thermal processing units, and pass cooling. The substrate G is transferred to the cassette station 1 via the unit. In addition, the third conveying apparatus 39 also has the same structure as the first conveying apparatus 33 and is accessible to any unit of the thermal processing unit blocks (TB) 37, 38.

In the processing station 2, each processing unit and a conveying apparatus are arrange | positioned so that 2 rows of conveying lines A and B may be comprised as mentioned above, and it may become the order of a process basically, and between these conveying lines A and B. The space 40 is provided. And a shuttle (substrate mounting member) 41 is provided so that this space 40 can be reciprocated. This shuttle 41 is comprised so that holding of board | substrate G is possible, and transfer of board | substrate G is carried out between conveyance lines A and B via shuttle 41. The transfer of the substrate G to the shuttle 41 is performed by the first to third transfer devices 33, 36, 39.

The interface station 3 includes a transfer device 42 for carrying in and out of the substrate G between the processing station 2 and the exposure apparatus 4, a buffer stage (BUF) 43 for arranging a buffer cassette, and cooling The external device block 45 which has an extension cooling stage (EXT / COL) 44 which is a board | substrate transfer part with a function, and the titler TITLER and the peripheral exposure apparatus EE is laminated | stacked up and down is conveying apparatus 42. It is installed adjacent to). The conveying apparatus 42 is equipped with the conveying arm 42a, and carrying in / out of the board | substrate G is performed between the processing station 2 and the exposure apparatus 4 by this conveying arm 42a.

Next, the outline of the processing operation in the resist coating and developing processing system 100 configured as described above will be described. First, the substrate G in the cassette C disposed on the mounting table 9 of the cassette station 1 is moved by the conveying device 11 to the excimer UV irradiation unit (e-UV) 22 of the processing station 2. The scrub pretreatment is carried out directly to the side. Subsequently, the conveyance apparatus 11 carries in the board | substrate G to the scrub cleaning process unit (SCR) 21, and scrubs it. After the scrub cleaning process, the substrate G is carried out to the pass unit of the thermal processing unit block (TB) 31 belonging to the first thermal processing unit section 26 by, for example, pulley conveyance.

The substrate G disposed in the pass unit of the thermal processing unit block (TB) 31 is first conveyed to the dehydration bake unit of the thermal processing unit block (TB) 31 and heat treated, followed by the thermal processing unit block. After being conveyed to and cooled by the (TB) 32 cooling unit, the adsorbent processing unit of the thermal processing unit block (TB) 31 and the thermal processing unit block (TB) 32 to increase the fixability of the resist. It is conveyed to any one of the adhering processing units, and is subjected to an adhering process (hydrophobic treatment) by the HMDS there. Subsequently, the substrate G is conveyed to the cooling unit, cooled, and further conveyed to the pass unit of the thermal processing unit block (TB) 32. The conveyance process of the board | substrate G at the time of performing such a series of processes is performed by the 1st conveyance apparatus 33 all.

The board | substrate G arrange | positioned at the pass unit of the thermal processing unit block (TB) 32 is carried in into the resist processing unit 23 by the board | substrate conveyance mechanism, such as a pulley conveyance mechanism, provided in the pass unit, for example. In the resist coating apparatus (CT) 23a, a resist liquid is supplied by conveying the board | substrate G in a horizontal position, and a coating film is formed, and a pressure reduction drying process is applied to a coating film by the pressure reduction drying apparatus (VD) 23b after that. Is carried out. Subsequently, the substrate G is subjected to the thermal processing unit block TB belonging to the second thermal processing unit section 27 from the resist processing unit 23 by the substrate transfer arm provided in the reduced pressure drying device (VD) 23b ( 34) is passed to the pass unit.

The substrate G disposed in the pass unit of the thermal processing unit block (TB) 34 is prebaked and thermal processing unit block of the thermal processing unit block TB 34 by the second transfer device 36. It is conveyed to any one of the prebaking units of TB) 35, and it is prebaked, and it is conveyed to the cooling unit of the thermal processing unit block (TB) 35, and is cooled to predetermined temperature. And the 2nd conveyance apparatus 36 is also conveyed by the pass unit of the thermal processing unit block (TB) 35.

Then, the board | substrate G is conveyed to the extension cooling stage (EXT * COL) 44 of the interface station 3 by the 2nd conveyance apparatus 36, and the conveyance apparatus of the interface station 3 (if needed). 42, it is conveyed to the peripheral exposure apparatus EE of the external device block 45, and exposure for removing the outer peripheral part (unnecessary part) of a resist film is performed there. Then, the board | substrate G is conveyed to the exposure apparatus 4 by the conveying apparatus 42, and the exposure process is given to the resist film on the board | substrate G in a predetermined pattern there. Moreover, the board | substrate G is once accommodated in the buffer cassette on the buffer stage (BUF) 43, and may be conveyed to the exposure apparatus 4 after that.

After the end of the exposure, the substrate G was carried by the transfer device 42 of the interface station 3 to the titler TITLER at the upper end of the external device block 45 so that predetermined information was recorded on the substrate G. Then, it is mounted in the extension cooling stage (EXT / COL) 44. The substrate G is a pass unit of the thermal processing unit block (TB) 35 belonging to the second thermal processing unit section 27 from the extension cooling stage (EXT COL) 44 by the second conveying device 36. Is returned.

The substrate G is operated by, for example, a pulley conveyance mechanism that extends from the pass unit of the thermal processing unit block (TB) 35 to the development processing unit (DEV) 24. It carries in to the developing processing unit (DEV) 24 from the pass unit of (35). In the development processing unit (DEV) 24, for example, while the substrate is transported in a horizontal posture, the developer is puddleed onto the substrate G, after which the conveyance of the substrate G is once stopped and the substrate ( By inclining G) at a predetermined angle, the developer on the substrate G is dropped, and in this state, the rinse solution is supplied to the substrate G to wash the developer. Subsequently, the substrate G is returned to the horizontal posture, and conveyance is started again, and the substrate G is dried by blowing out nitrogen gas or air for drying onto the substrate G.

After completion of the developing treatment, the substrate G is conveyed to the i-ray UV irradiation unit (i-UV) 25 by a conveying mechanism, for example, pulley conveyance, which is continuous from the developing treatment unit (DEV) 24, and then the substrate ( A decoloring treatment is performed for G). Subsequently, the substrate G passes through the thermal processing unit block (TB) 37 belonging to the third thermal processing unit section 28 by the pulley conveyance mechanism in the i-ray UV irradiation unit (i-UV) 25. It is taken out to the unit.

The substrate G disposed in the pass unit of the thermal processing unit block (TB) 37 is subjected to the post-baking unit and the thermal processing unit block of the thermal processing unit block TB TB 37 by the third conveying device 39. After being conveyed to one of the post-baking units of TB) 38 and post-baking, after being conveyed to the pass cooling unit of the thermal processing unit block (TB) 38 and cooled to a predetermined temperature, the cassette station 1 It is accommodated in the predetermined cassette C arrange | positioned at the cassette station 1 by the conveying apparatus 11 of ().

Next, the resist coating apparatus (CT) 23a is demonstrated in detail.

2 is a schematic plan view of a resist coating device (CT) 23a. The resist coating device (CT) 23a includes a stage 12 provided with a plurality of gas injection holes 16 for injecting a predetermined gas at a predetermined position on a surface thereof, and the substrate G on the stage 12 in the X direction. For cleaning the substrate supply mechanism 13 to be conveyed, the resist supply nozzle 14 supplying the resist liquid to the surface of the substrate G moving on the stage 12, and the resist supply nozzle 14. The nozzle cleaning unit 15 is provided.

The stage 12 is divided roughly into the introduction stage part 12a, the application | coating stage part 12b, and the carrying out stage part 12c toward the downstream from the upstream of the conveyance direction of the board | substrate G. As shown in FIG. The introduction stage portion 12a is an area for transferring the substrate G from the pass unit of the thermal processing unit block (TB) 32 to the coating stage portion 12b. The resist supply nozzle 14 is arrange | positioned at the application | coating stage part 12b, and discharges the resist liquid from the resist supply nozzle 14, making linear relative movement between the board | substrate G and the resist supply nozzle 14, and The resist liquid is scanned and coated on the substrate G. The carrying out stage part 12c is an area for carrying out the board | substrate G in which the coating film was formed to the pressure reduction drying apparatus VD 23b.

The board | substrate G is hold | maintained in the state which floated from the stage 12 in the horizontal position by the gas injected from the gas injection port 16, and is conveyed by the board | substrate conveyance mechanism 13 in this state.

In order to transfer the board | substrate G conveyed to the carrying out stage part 12c in addition to the gas injection port 16 to the carrying out stage part 12c of the stage 12 to the board | substrate conveyance arm 19, the board | substrate G is carried out. A lift pin 47 for lifting the lift is provided.

3 is a sectional view showing a schematic configuration of the substrate transfer mechanism 13. The board | substrate conveyance mechanism 13 is the board | substrate holding member 51a, 51b which hold | maintains a part of Y direction edge part of the board | substrate G, and the linear guide arrange | positioned so that it may extend to a Y direction side surface of the stage 12 in the X direction. X which holds 52a, 52b, the board | substrate holding member 51a, 51b, and the connection member 50 fitted with the linear guides 52a, 52b, and the connection member 50 reciprocally move in the X direction. The shaft drive mechanism 53 is provided.

The board | substrate holding member 51a, 51b has the structure in which one or more suction pads 48 for suction-holding the board | substrate G are attached to the large sheet part 49, respectively, and the suction pad 48 ) Is capable of adsorbing and holding the substrate G by operating a vacuum pump or the like not shown. The adsorption pad 48 holds the substrate G on the rear surface side of the portion of the substrate G to which the resist liquid is not applied, that is, near the end portion in the Y direction of the rear surface of the substrate G. As shown in FIG. As the X-axis drive mechanism 53, a belt drive mechanism, a ball screw, an air slider, an electric slider, a linear motor, etc. are mentioned, for example.

4 is a perspective view showing the schematic structure of the resist supply nozzle 14. The resist supply nozzle 14 has a structure in which a slit-type resist discharge port 14b for discharging the resist liquid in a substantially band shape is provided in the box body 14a elongated in one direction. The resist supply nozzle 14 is provided with a sensor (not shown) for measuring the distance between the resist discharge port 14b and the substrate G. The resist liquid can be supplied to the substrate G based on the measured value of the sensor. The position of the resist supply nozzle 14 at the time is controlled.

Next, a resist liquid supply system will be described.

Fig. 5 is a diagram showing a resist liquid supply system in the resist coating apparatus CT 23a together with a control system. The resist liquid supply system of this embodiment is a high concentration resist liquid tank 61 in which a high concentration resist liquid is stored, a solvent for diluting the resist liquid, for example, a solvent tank 64 in which thinner is stored, a high concentration resist liquid, It has the mixing part 70 which mixes a solvent. The mixing unit 70 is a confluence block 67 that increases the Reynolds number by joining the high concentration resist liquid and the solvent in a turbulent state, and a plurality of baffles are provided therein to more reliably mix the high concentration resist liquid and the solvent. It has the static mixer 68. In this way, the high concentration resist liquid and the solvent are mixed by the mixing unit 70 to form a dilute resist liquid.

The high concentration resist liquid tank 61 and the confluence block 67 are connected by a pipe 62. The high concentration resist liquid pump 63 is provided in the pipe 62, and the high concentration resist liquid in the high concentration resist liquid tank 61 is connected. The liquid is supplied to the confluence block 67 by the high concentration resist liquid pump 63. On the other hand, the solvent tank 64 and the confluence block are connected by the piping 65, the solvent pump 66 is provided in the piping 65, and the solvent in the solvent tank 64, for example, the thinner, is a solvent pump. Supplied to the confluence block 67 by means of (66). In addition, the pipe 62 and the pipe 65 have a narrow pipe diameter, which facilitates turbulence of the liquid.

Dilution resist liquid supply piping 69 is provided so that it may extend from the joining block 67 to the resist liquid discharge nozzle 14, and the said static mixer 68 is provided in this diluted resist liquid supply piping 69. As shown in FIG. The dilution resist liquid supply piping 69 is connected to two buffer tanks 71a and 71b via piping 69a and 69b, and the dilution resist liquid adjusted to the predetermined | prescribed compounding in the mixing part 70 is these buffers. It is supplied to the tanks 71a and 71b. The buffer tanks 71a and 71b are connected to a pipe 73 that leads to a resist liquid discharge nozzle 14 via pipes 72a and 72b respectively provided at the bottom thereof, and the resist liquid is supplied to the pipe 73. A pump 74 is provided, and the diluting resist liquid is supplied to the resist liquid discharge nozzle 14 from any one of the buffer tanks 71a and 71b by operating the pump 74. On the other hand, on-off valves 75a and 75b are provided in piping 69a and 69b, respectively, and on-off valves 76a and 76b are provided in piping 72a and 72b. Then, the resist liquid is selectively supplied to any one of the buffer tanks 71a and 71b by the opening / closing operation of these valves, and the resist liquid is selectively discharged from any one of the buffer tanks 71a and 71b. In addition, the buffer tanks 71a and 71b, the resist liquid supply pump 74, the piping 69a, 69b, 72a, 72b, 73, and the valves 76a and 76b constitute a resist liquid supply mechanism.

On the other hand, the monitor buffer tank 77 is connected via the circulation piping 69c on the way to the buffer tanks 71a and 71b of the piping 69. The circulation pipe 82c is connected to the bottom of the monitor buffer tank 77, and the return pipe 82 is connected to the circulation pipe 82c. The return pipe 82 is connected to the portion between the confluence block 67 and the static mixer 68 of the pipe 69 via the three-way valve 76. The return pipe 82 is provided with a circulation pump 84, and the pipe 69, the monitor buffer tank 77, the circulation pipe 82c, the return pipe 82, and the three-way valve 76 are provided. The circulation line which leads to the piping 69 via is comprised. A valve 75c is provided in the pipe 69c leading to the monitor buffer tank 77, and the valves 75a and 75b provided in the pipes 69a and 69b leading to the buffer tanks 71a and 71b described above. By operating the valve 75c, it is possible to switch the dilute resist liquid on the resist supply mechanism side and the circulation line side. In other words, the valves 75a, 75b, 75c function as these switching mechanisms.

Buffer tanks 71a and 71b are also connected to the return piping 82 via pipes 82a and 82b, respectively, and the resist liquid can be returned from the buffer tanks 71a and 71b by the circulation pump 84. Do. In addition, on-off valves 83a, 83b, and 83c are provided in the pipes 82a, 82b, and 82c.

In addition to the pipe 82c, a monitor pipe 78 is also connected to the bottom of the monitor buffer tank 77, and a discharge nozzle 79 for coating the monitor is connected to the other end of the pipe 78. The pipe 78 is provided with a monitor coating pump 80, and by operating the pump 80, the monitor buffer tank 77 passes through the monitor piping 78 to the discharge nozzle 79 for coating coating. The diluted resist liquid diluted at a predetermined compounding ratio is supplied. In addition, the opening and closing valve 81 is provided in the pipe 78.

The resist liquid discharged from the discharge nozzle 79 for monitor application is monitor-coated to a suitable to-be-coated object, for example, a roller or a glass substrate. And the film thickness measuring apparatus 85 is provided in the vicinity of the discharge nozzle 79 for monitor application | coating, and the film thickness of the coating film formed by monitor application | coating is measured.

As the pumps 63, 66, 74, 80, 84, a bellows pump, a diaphragm pump, a syringe pump, or the like, which are generally used in this field, can be used.

The control of the resist coating apparatus (CT) 23a including the control of the resist liquid supply system is performed by the controller 90. The controller 90 performs control of the pumps 63, 66, 74, 80, 84 and all the valves, and controls other components such as various drive mechanisms. As for the resist liquid supply system, the pumps 63 and 66 are controlled based on the result of the film thickness measuring device 85 measuring the film thickness of the film formed by the coating for the monitor, and the high concentration in the resist liquid tank 61 is obtained. The mixing ratio of the resist liquid and the solvent such as thinner in the solvent tank 64 is finely adjusted, and the supply destination and the like of the diluted and diluted resist liquid are controlled.

The controller 90 is intended to be controlled by an upper process controller 92 that controls the entire resist application and development processing system 100. The controller 90 and the process controller 92 are configured by a computer.

The process controller 92 controls each component of the resist application and development processing system 100 in addition to the control of the pump and the valve via the controller 90 as described above. The process controller 92 includes a keyboard for process managers to input commands for managing the resist coating and developing system 100, a display for visualizing and displaying the operation status of the resist coating and developing system 100. The user interface 93 which is made up is connected.

In addition, the process controller 92 includes a control program for realizing various processes executed in the resist coating and developing system 100 under the control of the process controller 92, or processing the respective components of the plasma etching apparatus according to the processing conditions. A program for executing the program, i.e., a storage unit 94 in which a recipe is stored, is connected. The stored recipe also includes control of the pump and the valve by the controller 90.

The recipe may be stored in a hard disk or a semiconductor memory, or may be set in a predetermined position of the storage unit 94 in a state accommodated in a portable storage medium such as a CD ROM or a DVD. In addition, the recipe may be appropriately transmitted from, for example, a dedicated line.

In the resist coating and developing system under the control of the process controller 92, if necessary, any recipe is called from the storage unit 94 and executed by the process controller 92 by an instruction from the user interface 93 or the like. The desired process of is performed.

Next, the processing operation in the resist coating apparatus (CT) 23a comprised as mentioned above is demonstrated.

First, in each part of the stage 12, the board | substrate G can be raised to a predetermined height, and the board | substrate G is pulled out by the pulley conveyance mechanism from the pass unit of the heat processing unit block TB. Enters the introduction stage portion 12a, and holds the Y-direction end portions of the substrate G in the substrate holding members 51a and 51b in a state where a part of the substrate G is still supported by the rollers. The substrate G in the suspended state is carried into the introduction stage portion 12a of the stage 12.

When the substrate G passes under the resist supply nozzle 14 disposed at a predetermined position, the resist liquid is supplied from the resist supply nozzle 14 to the surface of the substrate G to form a coating film.

Hereinafter, the procedure of resist liquid application | coating process is demonstrated, referring the flowchart of FIG.

First, a high concentration resist liquid tank 61 in which a high concentration resist liquid is stored, and a solvent for diluting the resist liquid, for example, a mixture portion of a high concentration resist liquid and a solvent in a predetermined ratio from a solvent tank 64 in which thinner is stored. It is supplied to 70 (step 1). The ratio of the high concentration resist liquid and the solvent at this time is prescribed in the recipe, and a command is given to the high concentration resist liquid pump 63 and the solvent pump 66 via the process controller 92 and the controller 90 based on the information. Is output.

The high concentration resist liquid and the solvent supplied to the mixing portion 70 are mixed by the joining block 67 and the static mixer 68 to form a diluted resist liquid in a sufficiently mixed state (step 2). Then, the valve 75c is opened, the valves 75a and 75b are closed, the valve 83c is opened, the valve 81 is closed to drive the circulation pump 84, the pipe 69, A circulating line which leads back to the pipe 69 via the monitor resist liquid tank 77, the pipe 82c, the return pipe 82, and the three-way valve 76 is constituted, and as described above, a high concentration resist and a solvent Is mixed to circulate the formed dilute resist solution (step 3).

Subsequently, the valve 81 is opened and the monitor coating pump 80 is driven to take out the dilute resist liquid from the monitor buffer tank 77 constituting the circulation line, and supply it to the monitor coating discharge nozzle 79. Then, the mixed liquid (resist liquid) is discharged from the discharge nozzle 79 for monitor application and the monitor is applied to measure the film thickness of the monitor coating film (step 4). The film thickness of this monitor coating film is used as a parameter used as an index of the compounding ratio of a high concentration resist liquid and a solvent.

This step can be performed in the order shown in Figs. In the example of Figs. 7A to 7C, the diluting resist liquid is supplied onto the roller 95 from the discharge nozzle 79 for coating the monitor to form a coating film on the roller 95, followed by heat treatment. [Fig. 7 (a)] and then, the film thickness of the coating film for monitor formed on the roller 95 by the film thickness measuring apparatus 85 is measured (Fig. 7 (b)), and then the roller (95) is washed (Fig. 7 (c)). In the example of Figs. 8A to 8C, after the diluting resist liquid is supplied onto the small glass substrate 96 from the discharge nozzle 79 for coating the monitor, a coating film is formed on the glass substrate 96. It heat-processes [FIG. 8 (a)], and then measures the film thickness of the coating film for monitors formed on the glass substrate 96 with the film thickness measuring apparatus 85 (FIG. 8 (b)), Thereafter, the glass substrate 96 is washed (FIG. 8C). At the time of application of these monitors, since the film thickness is not stabilized immediately after the start of coating, the film thickness of the latter half (100 mm or more from the coating start point) is measured in any of the roller 95 and the glass substrate 96.

In addition, monitor application | coating and film thickness measurement can also be performed by the apparatus using the belt shown in FIG. 9 or FIG.

In the apparatus of Fig. 9, for example, a forced belt 101 is wound around the upper rollers 102 and 103 and the lower rollers 104 and 105, and the discharge nozzle for coating the monitor directly on one upper roller 102. (79) is arrange | positioned, the film thickness measuring apparatus 85 is arrange | positioned immediately above the other upper roller 103, and the small pressure reduction drying apparatus 106 is arrange | positioned so that the belt 101 may pass between them. Moreover, between the lower rollers 104 and 105 of the belt 101, the washing tank 107 in which the washing liquid which consists of solvents, such as a thinner, was stored is arrange | positioned, and the belt 101 is immersed in the washing liquid in the washing tank 107. It is supposed to be. A spray rinse nozzle 108 and a gas blow nozzle 109 are disposed between the lower roller 105 and the upper roller 102.

In such an apparatus, the coating film is formed by discharging the diluted resist liquid onto the belt 101 from the discharge nozzle 79 for monitor application while moving the belt 101 in the direction of the arrow by a belt driving device (not shown). The coating film is dried by a small vacuum drying device 106 and the film thickness of the coating film after drying is measured by the film thickness measuring apparatus 85. Thereafter, the coating film on the belt 101 is rinsed and removed by the cleaning tank 107 and rinsed by the spray rinse nozzle 108, dried by gas blowing from the gas blow nozzle 109, and subsequently, Monitor application is performed.

By such an apparatus, the film thickness measurement which becomes an index of the compounding ratio of a high concentration resist liquid and a solvent can be performed more densely. Moreover, since application | coating by the discharge nozzle 79 for monitor application | coating is performed on a roller, gap control is easy. Moreover, since the film thickness measuring apparatus 85 is also provided directly on the roller, the film thickness measurement can be performed stably at a high density without being affected by the warping of the belt 101 or the like. Moreover, the pressure reduction of the small pressure reduction drying apparatus 106 can be performed by branching piping from the pressure reduction pump with which the pressure reduction drying unit (VD) 23b is equipped, and it is not necessary to add a pressure reduction pump newly.

In the apparatus of FIG. 10, the heater 110 is installed in place of the vacuum drying apparatus 106 to dry more completely. Thereby, since it becomes substantially actual film thickness, precision can be raised more. Moreover, since the belt 101 becomes high temperature by the heater 110, the cooling blow nozzle 111 is provided in the downstream of the upper roller 103. As shown in FIG. An oven may be disposed in place of the heater 110.

As mentioned above, although the example which measured the coating film in the state in which the resist liquid was dried was demonstrated, you may measure the time-dependent change of the film thickness of a wet state in the order shown to FIG. 11-13. In the example of Figs. 11A to 11C, the dilute resist liquid is supplied onto the roller 95 from the discharge nozzle 79 for coating the monitor to form a coating film on the roller 95 (Fig. 11A). )] Thereafter, the change over time (two or more points) of the coating film formed on the roller 95 by the film thickness measuring apparatus 85 in the wet state (Fig. 11 (b)), and then the roller. (95) is washed (Fig. 11 (c)). In the example of Figs. 12A to 12C, the diluting resist liquid is supplied onto the small glass substrate 96 from the discharge nozzle 79 for applying the monitor to form a coating film on the glass substrate 96 (Fig. 12). (A)] Then, the change over time (two or more points) of the coating film formed on the glass substrate 96 by the film thickness measuring apparatus 85 in the wet state is measured (FIG. 12 (b)), and After that, the glass substrate 96 is washed (Fig. 12 (c)).

The apparatus of FIG. 13 removes the reduced pressure drying apparatus 106 from the apparatus of FIG. 9, forms a coating film by supplying the diluted resist liquid onto the belt 101 from the discharge nozzle 79 for applying the monitor, and then, The change over time of the film thickness in the wet state is measured.

The change of the wet film thickness with time is as shown in the graph of FIG. 14, for example, and the dry film thickness after solvent volatilization is computed from such a graph using a suitable algorithm. If the accurate optical constant and the film thickness of the film to be measured can be grasped, it is possible to simultaneously display the predicted calculated film thickness before and after baking.

In addition, although the apparatus of FIG. 9 can shorten the tact time in a series of operations of monitor application and film thickness measurement, there is a fear that the solvent in the dilute resist liquid cannot be completely evaporated. In that case, the dry film thickness may be calculated using an algorithm from the graph of Fig. 14 by measuring the change in film thickness over time as described above.

The film thickness measurement data by the film thickness measuring apparatus 85 thus measured is transferred to the controller 90 and further transferred to the process controller 92, and it is determined whether or not it is within a predetermined film thickness range (step). 5).

When it is determined that the predetermined range is determined, the dilution resist is supplied to the resist liquid supply mechanism by closing the valve 75c and opening the valve 75a, and the diluting resist liquid is discharged from the resist liquid discharge nozzle 14, thereby providing a substrate ( The resist liquid is applied onto G) (step 6). In this step 6, first, for example, the dilute resist liquid is supplied to one of the buffer tanks 71a and 71b into the buffer tank 71a. The buffer tank 71a is configured to store an amount of dilute resist liquid required for application of one substrate (for example, 80 mL), and the pump 74 is driven by opening the valve 76a. The dilute resist liquid is supplied to the resist liquid discharge nozzle 14 via the pipes 72a and 73 and is applied to the application of the resist liquid to the actual substrate G. In addition, since the dilution resist liquid is stored in the buffer tank 71b in the application of the next substrate, the application can be carried out using the dilution resist liquid in the buffer tank 71b for application of the next substrate. I can keep it high.

On the other hand, when it is determined in step 5 that it is out of the predetermined film thickness range, a command is outputted from the process controller 92 to the high concentration resist liquid pump 63 and the solvent pump 66 via the controller 90 and the high concentration resist is generated. The ratio of liquid and solvent is changed (step 7).

The high concentration resist liquid and the solvent are supplied to the mixing unit 70 at a changed ratio, mixed in the confluence block 67 and the static mixer 68 of the mixing unit 70, and the above steps are performed for the diluted resist liquid whose ratio is readjusted. Circulation to the circulation line of 3 and the monitor application and the film thickness measurement of step 4 are performed again, and determination of step 5 is made again. Usually, it adjusts to predetermined | prescribed density in one retry.

In the above-described concentration adjustment, the film thickness can be measured in a short period of about 5 seconds, and even in the case of retrying, the film thickness is terminated in a short period of time. Therefore, assuming that the coating treatment on one substrate is about 1 minute, Concentration adjustment can be performed between application | coating processes. Therefore, density adjustment can be performed for every board | substrate. Of course, concentration adjustment may be performed for each lot.

In this way, the concentration of the resist liquid is adjusted inline, and a circulation line is installed in a pipe for supplying the resist liquid to the resist liquid discharge nozzle to monitor application, and the film thickness is measured to determine the blending ratio of the diluted resist liquid. It is possible to appropriately control the blending ratio on the basis of the result, thereby eliminating the waste of the resist liquid. In addition, since the density adjustment of the resist liquid used for the next application can be performed between the application of the resist liquid, the throughput is not lowered.

In addition, when the resist liquid of the buffer tank 71a or 71b does not become a predetermined density | concentration, valve | bulb 76a or 76b is closed, valve 83a or 83b is opened, and return piping by the circulation pump 84 is carried out. It can be made to cycle through (82).

Next, the example of conditions for performing density | concentration adjustment of the resist liquid and measurement of the film thickness for monitoring in such an inline are shown next. The capacity of the monitor coating pump 80 is 6 mL, the capacity of the circulation pump 84 is 10 mL, the inner diameter of the pipe is 4.35 mm, and one substrate is considered in consideration of the retry of the film thickness measurement. It is assumed that it is measured twice during 1 minute, which is the application time of, and that it can be measured in 5 seconds in the film thickness measurement apparatus. When the capacity between the monitor buffer tank 77 and the discharge nozzle for monitor application is 19.5 mL, the replacement amount is about three times, so the capacity of the monitor buffer tank 77 is 60 mL. If the volume of the static mixer 68 is 7.5 mL and the piping volume of the circulation line is 7.4 mL, the amount that must be circulated by the circulation pump 84 is 10 mL of the circulation pump 84, and the buffer for monitoring. Considering 60 mL of the capacity of the tank 77, it becomes 7.5 + 60 + 10 + 7.4 = 84.9 mL. If the film thickness measurement is performed twice in one minute as described above, and the correction amount supply time from the pump 63 or 66 is 3 seconds, the time that can actually be circulated to the circulation pump 84 is 1 minute-(5 Seconds + 3 seconds) x 2 = 44 seconds. When reload time and discharge time are judged to be the same thing, it is necessary to circulate twice in 44 second. Therefore, 44 seconds ÷ 2 ÷ 2 = 11 seconds and 84.9 mL calculated above should be discharged. Therefore, the discharge rate of the circulation pump 84 is 84.9 ÷ 11 = 7.7 mL / sec, which is 519 mm / sec in terms of flow rate. Since the above assumption assumes a realistic condition and the resulting flow rate of the circulation pump 84 of 519 mm / sec is also a realistic value, it was confirmed that the concentration adjustment of the resist liquid in the inline as described above can be sufficiently realized.

In addition, this invention is not limited to the said embodiment, A various deformation | transformation is possible. For example, although the said embodiment showed the example of the scan coating which supplies a resist liquid from an elongate resist supply nozzle, moving a board | substrate to one direction, it is not limited to this, For example, it carries out a scan coating by moving a nozzle, for example. Even in a case of course, it is a matter of course that it can be applied even in the case of rotary coating.

In addition, although the film thickness of the coating film was used as a parameter used as an index of the mixing ratio of the high concentration resist liquid and the solvent, other parameters may be used. Moreover, although it showed about the case where a resist liquid was used as a coating liquid, it is applicable also in the case of other coating liquids, such as the coating liquid used for a polyimide and a dielectric film. In addition, although the example which used the glass substrate for LCD as a board | substrate was shown, of course, it is applicable also to the case of other board | substrates, such as a semiconductor wafer.

According to the present invention, the concentration of the coating liquid and the solvent is mixed in-line to adjust the concentration, and the mixing ratio is monitored in-line, and the adjustment is performed when the mixing ratio is out of order. Therefore, waste of the coating liquid can be prevented as much as possible. Can be. In addition, since the density | concentration adjustment of the coating liquid for the next board | substrate is performed while apply | coating a coating liquid to a board | substrate, it does not cause the fall of a throughput.

Claims (29)

High concentration coating liquid sending part for sending a high concentration coating liquid, Solvent sending part for sending a solvent, A mixing part connected to the coating liquid sending part and the solvent sending part and mixed with the high concentration coating liquid and the solvent to make a diluted coating liquid diluted to a predetermined concentration; A coating liquid discharge mechanism for discharging the diluted coating liquid to form a coating film on the substrate; A dilution coating liquid supply mechanism for supplying the dilution coating liquid from the mixing portion to the coating liquid discharge mechanism; A monitor unit which takes in the dilution coating liquid formed in the mixing unit and monitors a parameter which is an index of the mixing ratio of the high concentration coating liquid and the solvent; A switching mechanism for switching the diluted coating liquid formed at the mixing section on the coating liquid discharge mechanism side and the monitor portion side; On the basis of the parameters monitored by the monitor unit, it is determined whether the mixing ratio of the high concentration coating liquid and the solvent is within a predetermined range, and when it is determined that the mixing ratio is not within the predetermined range, it is sent out from the high concentration coating liquid sending unit. Adjust the mixing ratio of the high concentration coating liquid and the solvent discharged from the solvent sending portion, and when the mixing ratio is within a predetermined range, by operating the switching mechanism to feed the dilution coating liquid to the coating liquid discharge mechanism side A control mechanism for controlling to And said parameter is a thickness of a coating film of said dilution coating liquid. delete High concentration coating liquid sending part for sending a high concentration coating liquid, Solvent sending part for sending a solvent, A mixing part connected to the coating liquid sending part and the solvent sending part and mixed with the high concentration coating liquid and the solvent to make a diluted coating liquid diluted to a predetermined concentration; A coating liquid discharge mechanism for discharging the diluted coating liquid to form a coating film on the substrate; A dilution coating liquid supply pipe for feeding a dilution coating liquid from the mixing portion toward the coating liquid discharge mechanism; A dilution coating liquid supply mechanism for supplying a dilution coating liquid to the coating liquid discharge mechanism via the supply pipe; A dilution coating liquid circulation unit which takes in the dilution coating liquid from the middle of the said supply pipe, returns to the said dilution coating liquid supply piping, and circulates; A switching mechanism for switching the supply destination of the diluted coating liquid at the coating liquid discharge mechanism side and the coating liquid circulation section; A monitor coating mechanism for taking out a dilution coating liquid from the dilution coating liquid circulation in a state in which the switching mechanism is configured to supply the dilution coating liquid to the dilution coating liquid circulating portion, and performs a monitor application; A film thickness measuring device for measuring the thickness of the coating film coated by the monitor coating device; From the result of the film thickness measurement by the film thickness measuring apparatus, it is determined whether the mixing ratio of the high concentration coating liquid and the solvent is within a predetermined range, and when it is determined that the mixing ratio is not within the predetermined range, the transfer of the diluted coating liquid is carried out. If the supply destination is the said dilution process liquid circulation part as it is, the mixing ratio of the high concentration coating liquid sent out from the said high concentration coating liquid sending part and the solvent sent out from the said solvent sending part is adjusted, and when the said mixing ratio is in the predetermined range, the said And a control mechanism for operating the switching mechanism to control the feeding of the diluted coating liquid to the coating liquid discharge mechanism side. 4. The coating apparatus according to claim 3, wherein the mixing portion has a confluence block for converging the high concentration coating liquid and the solvent in a turbulent state, and a static mixer provided downstream of the confluence block. The said coating liquid discharge mechanism has a slit corresponding to the width of a board | substrate, and discharges the said diluted coating liquid, making the linear motion relatively, maintaining it with the board | substrate at a fixed interval. Coating processing apparatus. The said switching mechanism is a 1st opening / closing valve which performs supply and interruption of the diluted coating liquid from the said diluted coating liquid supply piping to the said diluted coating liquid circulation part, and the said diluted coating liquid from the said diluted coating liquid supply piping. And a second opening / closing valve for supplying and interrupting the dilution coating liquid to the supply mechanism. The dilution coating liquid supply mechanism has a buffer tank for temporarily storing a dilution coating liquid, and a supply pump for supplying the dilution coating liquid from the buffer tank to the coating liquid discharge mechanism. Coating processing apparatus. 8. The coating treatment apparatus according to claim 7, wherein the buffer tank stores a diluted coating liquid corresponding to one substrate. 8. The coating treatment apparatus according to claim 7, wherein the dilution coating liquid supply mechanism has two buffer tanks, and one of these two buffer tanks is connected to the coating liquid discharge mechanism side. 10. The monitor coating apparatus according to any one of claims 3 to 9, wherein the monitor coating mechanism is provided with a monitor pipe for taking out the dilution coating liquid from the dilution coating liquid circulation section and a monitor coating discharge provided at the tip of the monitor piping. And a monitor for applying a dilution coating liquid from the dilution coating liquid circulation to the discharge nozzle for coating the monitor from the dilution coating liquid circulation section, and a coating body to which the dilution coating liquid is applied. Coating processing apparatus made into. 10. The monitor buffer tank according to any one of claims 3 to 9, wherein the coating liquid circulation unit temporarily stores a dilution coating liquid for carrying out monitor application, and the monitor buffer tank extends from the monitor buffer tank to the supply pipe. And a circulation pump provided in the return pipe and circulating the dilution coating liquid. 12. The monitor application mechanism according to claim 11, wherein the monitor application mechanism is provided in a monitor pipe for taking out the dilution coating liquid from the monitor buffer tank, a monitor coating discharge nozzle provided at a tip end of the monitor pipe, and the monitor pipe. And a monitor coating pump for supplying a diluting coating liquid from the dilution coating liquid circulation section to the discharge nozzle for coating coating, and a coated object to which the dilution coating liquid is applied. The coating apparatus according to claim 10, wherein the coated object of the monitor application mechanism is a roller, and the monitor is applied while rotating the roller. The said coating body of the said monitor application | coating mechanism is a monitor board | substrate, and monitor application | coating is performed to the said board | substrate for monitors, making the relative movement between the said monitor application discharge nozzle and the said monitor board | substrate. Coating processing apparatus made into. The coating device according to claim 10, wherein the coated object of the monitor application mechanism is a belt wound around a plurality of conveying rollers, and the monitor is applied while the belt is moved. The coating processing apparatus according to claim 15, wherein the discharge of the diluted coating liquid from the discharge nozzle for coating the monitor is performed directly above any one of the conveying rollers. 16. The coating apparatus according to claim 15, wherein the film thickness measuring device is arranged to perform film thickness measurement directly on any one of the conveying rollers. Mixing a high concentration coating liquid and a solvent in a mixing section to form a diluted coating liquid diluted to a predetermined concentration; Injecting the diluted coating liquid formed in the mixing section and monitoring a parameter that is an index of the mixing ratio of the high concentration coating liquid and the solvent; Determining whether the mixing ratio of the high concentration coating liquid and the solvent is within a predetermined range based on the monitored parameters; Adjusting the mixing ratio of the high concentration coating liquid and the solvent when determining that the mixing ratio is not within a predetermined range; When the mixing ratio is within a predetermined range, the dilution coating liquid is supplied to a coating liquid discharging mechanism, and the dilution coating liquid is applied onto the substrate by discharging the dilution coating liquid from the coating liquid discharging mechanism. Determining whether the mixing ratio of the high concentration coating liquid and the solvent is in a predetermined range for the next substrate while applying the dilution coating liquid to the substrate; and when determining that the mixing ratio is not in the predetermined range, Performing a step of adjusting the mixing ratio of the high concentration coating liquid and the solvent; The parameter is a coating treatment method, characterized in that the thickness of the coating film of the diluted coating liquid. delete Mixing a high concentration coating liquid and a solvent in a mixing section to form a diluted coating liquid diluted to a predetermined concentration; Injecting the diluted coating liquid formed in the mixing section to apply the monitor; Measuring the film thickness of the coating film subjected to the monitor coating; Judging whether the mixing ratio of the high concentration coating liquid and the solvent is within a predetermined range from the result of the film thickness measurement; Adjusting the mixing ratio of the high concentration coating liquid and the solvent when determining that the mixing ratio is not within a predetermined range; When the mixing ratio is within a predetermined range, the dilution coating liquid is supplied to a coating liquid discharging mechanism, and the dilution coating liquid is applied onto the substrate by discharging the dilution coating liquid from the coating liquid discharging mechanism. While applying the dilution coating liquid to the substrate, taking in the dilution coating liquid formed in the mixing section for the next substrate and applying the monitor; measuring the film thickness of the coating film subjected to the monitor coating; A step of judging whether or not the mixing ratio of the high concentration coating liquid and the solvent is in a predetermined range from the result of the thickness measurement, and adjusting the mixing ratio of the high concentration coating liquid and the solvent when determining that the mixing ratio is not in the predetermined range. The coating treatment method characterized by performing the process of doing. 21. The coating treatment method according to claim 20, wherein the monitor application is performed by discharging a diluting coating liquid from the discharge nozzle for application of the monitor to the roller while rotating the monitor roller. 21. The method of claim 20, wherein the application of the monitor is performed by discharging a diluted coating liquid from the monitor application discharge nozzle to the monitor substrate while causing relative movement between the monitor application discharge nozzle and the monitor substrate. Coating treatment method to be used. 21. The coating treatment method according to claim 20, wherein the monitor application is performed by discharging the diluting coating liquid from the monitor application discharge nozzle to the belt while moving the belt wound around the plurality of conveying rollers. 24. The coating treatment method according to claim 23, wherein in the monitor application, the discharge of the diluting coating liquid from the discharge nozzle for coating the monitor is performed directly above any one of the conveyance rollers. 24. The coating treatment method according to claim 23, wherein the step of measuring the film thickness of the coating film is performed by measuring the film thickness directly on any one of the conveying rollers. The coating treatment method according to any one of claims 21 to 25, wherein the film thickness measurement is performed after drying the coating film formed by the monitor application. 26. The coating treatment method according to any one of claims 21 to 25, wherein in the film thickness measurement, the film thickness is calculated based on the change over time of the film thickness of the coating film formed by the monitor application. . A computer readable storage medium having stored thereon software for executing a control program in a computer, wherein the control program includes a coating processing apparatus for the computer such that any one of the methods of claim 18 or 20 to 25 is executed. A computer readable storage medium, characterized in that for controlling. High concentration coating liquid sending part for sending a high concentration coating liquid, Solvent sending part for sending a solvent, A mixing part connected to the high concentration coating liquid sending part and the solvent sending part and mixed with the high concentration coating liquid and the solvent to make a diluted coating liquid diluted to a predetermined concentration; A coating liquid discharge mechanism for discharging the diluted coating liquid to form a coating film on a substrate; A dilution coating liquid supply pipe for feeding the dilution coating liquid from the mixing portion toward the coating liquid discharge mechanism; A buffer tank for temporarily storing the dilution coating liquid from the dilution coating liquid supply pipe; A dilution coating liquid supply mechanism having a supply pump for supplying the dilution coating liquid from the buffer tank to the coating liquid discharge mechanism; A dilution coating liquid circulation unit connected to each of the buffer tank and the dilution coating liquid supply pipe, for taking the dilution coating liquid from one of the buffer tank and the dilution coating liquid supply pipe, and returning and circulating to the mixing unit; , And a first switching mechanism for switching the supply destination of the diluted coating liquid on the coating liquid discharge mechanism side and the diluted coating liquid circulation part side.

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