KR101205545B1 - Solar cell - Google Patents

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KR101205545B1
KR101205545B1 KR1020060083750A KR20060083750A KR101205545B1 KR 101205545 B1 KR101205545 B1 KR 101205545B1 KR 1020060083750 A KR1020060083750 A KR 1020060083750A KR 20060083750 A KR20060083750 A KR 20060083750A KR 101205545 B1 KR101205545 B1 KR 101205545B1
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solar cell
protective layer
semiconductor substrate
reflection
sunlight
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KR1020060083750A
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Korean (ko)
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KR20080020351A (en
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김기영
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김기영
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

본 발명은 태양광 입사효율이 개선된 보호층을 갖는 태양전지에 관한 것으로서, 태양광의 일정 각도를 이루며 입사시 표면 반사에 따른 광손실을 최소화 하고, 이로 인한 태양광의 투과율을 극대화 하여 태양전지의 효율을 향상시킬 수 있도록 하기 위한 것이다.The present invention relates to a solar cell having a protective layer with improved solar incidence efficiency, which achieves a certain angle of sunlight and minimizes light loss due to surface reflection upon incidence, thereby maximizing the transmittance of solar light, thereby increasing the efficiency of the solar cell. It is to help improve.

이를 실현하기 위한 본 발명의 태양전지는, 제1도전형의 반도체 기판, 상기 반도체 기판과 반대 도전형을 가지며 전면측에 형성되는 제2도전형의 반도체층, 상기 반도체층의 전면에 형성되는 반사 방지막, 상기 반도체층 및 반도체 기판의 전면과 후면에 각각 구성되는 전면전극 및 후면전극, 상기 반사 방지막의 전면에 형성되되, 외표면에는 연속되는 요철부를 형성하고 있는 보호층으로 이루어짐을 특징으로 한다.The solar cell of the present invention for achieving this, the semiconductor substrate of the first conductive type, the second conductive semiconductor layer formed on the front side having the opposite conductivity type to the semiconductor substrate, the reflection formed on the front surface of the semiconductor layer The anti-reflection film, the front electrode and the rear electrode formed on the front and rear surfaces of the semiconductor layer and the semiconductor substrate, respectively, is formed on the front surface of the anti-reflection film, characterized in that the outer surface is formed of a protective layer forming a continuous uneven portion.

태양전지, 태양광, 입사각, 경사, 투과, 광손실, 반사 Solar cell, sunlight, incident angle, tilt, transmission, light loss, reflection

Description

태양광 입사효율이 개선된 보호층을 갖는 태양전지{SOLAR CELL}Solar cell with protective layer with improved solar incident efficiency {SOLAR CELL}

도 1은 종래 태양전지의 단면 구조도.1 is a cross-sectional structural view of a conventional solar cell.

도 2는 일반적인 평판 유리면에서의 태양광 입사각도 변화에 따른 광투과율 그래프.Figure 2 is a light transmittance graph according to the change in the incident angle of sunlight on the general flat glass surface.

도 3은 본 발명 태양전지의 단면 구조도.Figure 3 is a cross-sectional structural view of the solar cell of the present invention.

도 4는 도 3의 A부 상세 확대도.4 is a detailed enlarged view of a portion A of FIG.

도 5는 본 발명 태양전지에서의 태양광 입사각도 변화에 따른 광투과율 그래프.5 is a light transmittance graph according to the change in the incident angle of sunlight in the solar cell of the present invention.

<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for the main parts of the drawings>

10 : p형 반도체기판 20 : n형 반도체층10: p-type semiconductor substrate 20: n-type semiconductor layer

30 : 전면전극 40 : 후면전극30: front electrode 40: rear electrode

50 : 반사방지막 60 : 보호층50: antireflection film 60: protective layer

61 : 요철부 θt: 경사각61: uneven portion θt: inclination angle

θi: 태양광 입사각θi: solar incident angle

본 발명은 태양전지에 관한 것으로서, 더욱 상세하게는 외부로부터 입사되는 태양광의 입사효율을 개선시켜 에너지 이용 효율을 극대화 하기 위한 태양전지 구조에 관한 것이다.The present invention relates to a solar cell, and more particularly, to a solar cell structure for maximizing energy efficiency by improving the incident efficiency of sunlight incident from the outside.

일반적으로 태양전지는 반도체의 광 기전력 효과를 이용한 것으로서, P형 반도체와 N형 반도체를 조합하여 만든다.In general, a solar cell uses the photovoltaic effect of a semiconductor and is made by combining a P-type semiconductor and an N-type semiconductor.

즉, 태양광발전의 원리를 살펴보면, p형 반도체와 n형 반도체가 접한부분(pn접합부)에 빛이 들어오면, 빛 에너지에 의하여 반도체 내부에서 마이너스 전하(전자)와 플러스의 전하(정공)이 발생한다.In other words, the principle of photovoltaic power generation shows that when light enters a portion where a p-type semiconductor and an n-type semiconductor are in contact (pn junction), negative charges (electrons) and positive charges (holes) are generated inside the semiconductor by light energy. Occurs.

그리고, 빛에너지에 의해 발생된 전자와 정공은 내부의 전계에 의하여 각각 n형 반도체측과 p형 반도체측으로 이동하여 양쪽의 전극부에 모아진다. 이러한 두 개의 전극을 도선으로 연결하면 전류가 흐르고 외부에서 전력으로 이용할 수 있게 되는 것이다.The electrons and holes generated by the light energy move to the n-type semiconductor side and the p-type semiconductor side by the internal electric field, and are collected at both electrode portions. Connecting these two electrodes with wires allows the current to flow and can be used as power from outside.

한편, 태양전지는 전극의 형태에 따라 스크린 프린팅형 태양전지(Screen Printing Solar Cell;SPSC)와 함몰전극형 태양전지(Buried Contact Solar Cell;BCSC)로 구분할 수 있다.Meanwhile, the solar cell may be classified into a screen printing solar cell (SPSC) and a buried electrode solar cell (BCSC) according to the shape of the electrode.

전극 형성시 스크린 프린팅법을 사용하는 SPSC는 일반적으로 제조하기가 용이하지만 변환효율이 낮은 편이다. 한편, BCSC는 SPSC와 거의 동일한 제조원가로 제조할 수 있는 동시에 변환효율이 보다 높은 편이기 때문에 최근에는 BCSC전지가 주류를 이루고 있다.SPSC, which uses screen printing for forming electrodes, is generally easy to manufacture but has low conversion efficiency. On the other hand, since BCSC can be manufactured at almost the same manufacturing cost as SPSC and has a higher conversion efficiency, BCSC batteries have become mainstream in recent years.

도 1은 종래 BCSC의 구조를 나타낸 것으로서, 도시된 바와 같이 제1도전형 p 형 실리콘 기판(1)의 전면에 제2도전형 불순물이 도핑되어 있는 n층(2)이 형성되어 상호간의 사이에 pn접합이 형성되어 있고, 전면과 후면에는 각각 전면전극(3)과 후면전극(4)이 구성되어져 있으며, n층(2) 전면에는 전면 산화규소막인 반사방지막(5)이 형성되어 있다.1 shows a structure of a conventional BCSC, and as shown, an n layer 2 doped with a second conductive impurity is formed on the entire surface of the first conductive p-type silicon substrate 1 so as to be interposed therebetween. A pn junction is formed, and a front electrode 3 and a rear electrode 4 are formed on the front and rear surfaces, respectively, and an antireflection film 5, which is a front silicon oxide film, is formed on the front of the n layer 2.

그리고, 반사방지막(5)을 보호하기 위하여 전면에는 유리재질로서 보호층(6)이 형성되어져 있다.In order to protect the antireflection film 5, a protective layer 6 is formed on the front surface of the glass material.

그러나, 종래 태양전지 구조에서는 보호층(6)의 표면이 평면형태를 이루고 있기 때문에 광 입사효율이 저하되는 문제점이 있었다.However, in the conventional solar cell structure, since the surface of the protective layer 6 has a planar shape, there is a problem that the light incident efficiency is lowered.

즉, 도 2는 태양광의 입사각도에 따른 평판 유리면에서의 투과율 변화를 나타낸 그래프로서, 태양광의 입사각도가 점차 증가함에 따라 평판 유리면에서 태양광의 반사로 인한 손실량이 점차 증가하게 되는데, 특히 그래프를 통해 확인할 수 있는 바와 같이 입사각이 60도를 넘어서면서 투과율이 급격하게 저하되는 것을 확인할 수 있다.That is, FIG. 2 is a graph showing the change in transmittance on the flat glass surface according to the incident angle of sunlight. As the incident angle of the sunlight gradually increases, the amount of loss due to the reflection of sunlight on the flat glass surface gradually increases. As can be seen, it can be seen that the transmittance rapidly decreases as the incident angle exceeds 60 degrees.

본 발명은 상기한 종래 기술에서의 문제점을 개선하기 위해 제안된 것으로서, 외부로 부터 유입되는 빛에너지의 반사를 효율적으로 감소시켜 광투과율을 향상시킬 수 있는 보호층 구조를 제공함으로서 태양전지의 광효율을 향상시킬 수 있도록 하는데 목적이 있다.The present invention has been proposed to improve the above problems in the prior art, by providing a protective layer structure that can effectively reduce the reflection of light energy flowing from the outside to improve the light transmittance to improve the light efficiency of the solar cell The goal is to improve it.

상기 목적은, 제1도전형의 반도체 기판, 상기 반도체 기판과 반대 도전형을 가지며 전면측에 형성되는 제2도전형의 반도체층, 상기 반도체층의 전면에 형성되는 반사 방지막, 상기 반도체층 및 반도체 기판의 전면과 후면에 각각 구성되는 전면전극 및 후면전극, 상기 반사 방지막의 전면에 형성되되, 외표면이 연속되는 요철형상을 이루는 보호층으로 이루어짐을 특징으로 하는 태양광 입사효율이 개선된 보호층을 갖는 태양전지 구조를 통해 이룰 수 있게 된다.The object is a semiconductor substrate of a first conductive type, a semiconductor layer of a second conductive type having a conductivity type opposite to that of the semiconductor substrate, formed on the front side, an antireflection film formed on the entire surface of the semiconductor layer, the semiconductor layer and the semiconductor. Protective layer having improved solar incidence efficiency, comprising a front electrode and a rear electrode respectively formed on the front and rear surfaces of the substrate, and a protective layer formed on the front surface of the anti-reflection film, the outer surface of which forms a concave-convex shape. It can be achieved through a solar cell structure having a.

이하, 본 발명의 구체적인 실시예를 첨부된 도 3 내지 도 5를 참조하여 상세히 살펴보기로 한다.Hereinafter, specific embodiments of the present invention will be described in detail with reference to FIGS. 3 to 5.

먼저, 본 실시예에 따른 태양전지의 개략적인 구성을 살펴보면, 제1도전형의 p형 반도체기판(10)을 기준으로 전면측에는 제2도전형의 n형 반도체층(20)과 반사방지막(50) 그리고 전면전극(30)이 형성되었으며, 후면측에는 후면전극(40)이 통상의 구조를 이루며 형성되었다.First, referring to the schematic configuration of the solar cell according to the present embodiment, the n-type semiconductor layer 20 and the anti-reflection film 50 of the second conductive type are formed on the front side of the p-type semiconductor substrate 10 of the first conductive type. And the front electrode 30 was formed, the rear electrode 40 was formed to form a conventional structure on the back side.

특히, 본 발명의 태양전지는 반사방지막(50)의 전면측에 위치하는 보호층(60) 표면에 연속된 삼각형 형태의 요철부(61)를 형성함으로서 태양광의 반사로 인한 광손실을 감소시킬 수 있도록 하였다.In particular, the solar cell of the present invention can reduce the light loss due to the reflection of sunlight by forming a continuous triangular-shaped uneven portion 61 on the surface of the protective layer 60 located on the front side of the anti-reflection film (50). It was made.

즉, 상기 요철부(61)는 대칭형태를 이루는 양측경사면이 일정 경사각(θt)을 이루게 되는데, 요철부(1)의 경사각과 태양광 입사각 변화에 따른 광 투과율을 조애 평판형과 비교하여 실험해 보았으며, 그 실험결과는 하기 [표 1]에 나타난 바와 같다That is, the uneven portion 61 is a symmetrical form of both inclined surfaces to form a predetermined inclination angle (θt), the light transmittance according to the change in the inclination angle of the uneven portion 1 and the incident angle of sunlight compared to the roughness flat type experiment And the experimental results are shown in the following [Table 1].

태양광
입사각
(θi)sunlight
angle of incidence
(θi) 광 투과율(%)% Light transmittance 평판형(종래)Flat type (conventional) 요철형(본 발명)Uneven type (this invention) θt=0°θt = 0 ° θt=30°θt = 30 ° θt=40°θt = 40 ° θt=50°θt = 50 ° θt=60°θt = 60 ° θt=70°θt = 70 ° θt=80°θt = 80 ° 0°0 ° 8888 8686 93.293.2 97.997.9 97.597.5 99.599.5 99.799.7 10°10 ° 8888 86.686.6 93.493.4 97.897.8 98.698.6 99.599.5 99.799.7 20°20 ° 8888 86.786.7 91.791.7 95.495.4 98.398.3 98.198.1 99.499.4 30°30 ° 8787 87.287.2 9090 93.593.5 98.398.3 98.498.4 98.598.5 40°40 ° 8686 88.488.4 88.788.7 90.890.8 9696 98.398.3 98.398.3 50°50 ° 8484 88.688.6 8888 8888 92.792.7 98.198.1 98.298.2 60°60 ° 7979 8787 8888 8888 8888 8888 9898 70°70 ° 6767 8686 8787 8888 8888 8888 9797 80°80 ° 4141 8484 8686 8787 8888 8888 8989

상기 실험결과를 통해 보호층(60) 표면이 종래 평판형인 경우와 본 발명의 요철형인 경우를 비교해 보면, 전체적으로는 본 발명의 요철형이 종래 평판형에 비해 광 투과율이 개선된 결과로 나타났으나, 경사각(θt)을 30°이하로 형성시켰을 때에는 태양광 입사각(θi)이 수직방향(0°) 또는 10°와 같이 작은 경우 오히려 종래 평판형에 비해 광 투과율이 낮게 나타남을 확인할 수 있었다.Comparing the case where the surface of the protective layer 60 is a conventional flat type and the uneven type of the present invention through the experimental results, the overall uneven type of the present invention was shown to have improved light transmittance as compared to the conventional flat type. When the inclination angle θt was formed to be 30 ° or less, when the solar light incident angle θi was as small as the vertical direction (0 °) or 10 °, the light transmittance was lower than that of the conventional flat plate type.

따라서, 요철부(61)의 경사각(θt)은 40°≤θt＜ 90°의 범위를 만족하도록 형성시켜야 태양광의 입사각(θi) 전체에 대하여 투과율면에서 균형적인 향상이 이루어지게 됨을 알 수 있다.Therefore, it can be seen that the inclination angle θt of the uneven portion 61 is formed to satisfy the range of 40 ° ≦ θt <90 ° to achieve a balanced improvement in transmittance with respect to the entire incident angle θi of sunlight.

한편, 상기 보호층(60)은 기존 유리재료로 요철면을 형성하고자 할 때에는 가공성이 저하되어 원하는 경사각을 고르게 형성시키기 어렵기 때문에, 투과율에 영향을 미치지 않는 재료중에서 산화마그네슘(MgO)을 사용함이 바람직하며, 산화마그네슘을 스트라이프 형태로 도포폭을 조절하면서 수회 도포함으로 원하는 요철면을 형성시킬 수 있게 된다.On the other hand, since the protective layer 60 is difficult to form the desired inclination angle because the workability is reduced when forming the uneven surface of the existing glass material, it is necessary to use magnesium oxide (MgO) in the material does not affect the transmittance Preferably, it is possible to form the desired concave-convex surface by applying magnesium oxide several times while adjusting the coating width in the form of a stripe.

이와 같은 구성을 이루는 본 발명 태양전지의 사용에 따른 작용효과를 살펴보기로 한다.The effect of using the solar cell of the present invention constituting such a configuration will be described.

보호층(60) 표면에 요철부(61)를 형성하고 있는 본 발명 구조의 태양전지가 설치되어지면, 보호층(60) 표면에서 태양광의 반사율을 감소시킬 수 있게 됨으로 광효율을 개선시킬 수 있게 된다.When the solar cell of the present invention structure in which the uneven portion 61 is formed on the surface of the protective layer 60 is installed, it is possible to reduce the reflectance of sunlight on the surface of the protective layer 60, thereby improving the light efficiency. .

즉, 도 4의 확대도 에서와 같이 태양광이 일정각도의 입사각(θi)으로 입사되는 경우 보호층 표면이 일정 경사각(θt)을 이루고 있기 때문에 표면반사가 이루어진 일부 태양광은 인접한 요철부(61)로 재 입사되어지게 됨을 알 수 있다.That is, when the sunlight is incident at a predetermined angle of incidence angle θ i as shown in the enlarged view of FIG. 4, some of the sunlight that has undergone surface reflection is adjacent to the uneven portion 61 because the surface of the protective layer forms a constant inclination angle θ t. It can be seen that it is to be re-incident to).

따라서, 발명의 구조에 의하면 보호층(60)에서 표면 반사로 인한 태양광의 손실을 최소화할 수 있게 되며, 이에 따라 도 5에 도시된 바와 같이 점선으로 표시된 종래 평판형(0°)에 비해 본 발명의 경사각 요철형상을 이루는 경우의 보호층 투광율이 크게 개선되어질 수 있게 되는 것이다.Therefore, according to the structure of the invention it is possible to minimize the loss of sunlight due to the surface reflection in the protective layer 60, according to the present invention compared to the conventional flat type (0 °) indicated by the dotted line as shown in FIG. The light transmittance of the protective layer in the case of forming the inclination angle of the concave-convex shape can be greatly improved.

그리고, 상기에서 본 발명의 특정한 실시 예가 설명 및 도시되었지만 본 발명의 태양전지 구조가 당업자에 의해 다양하게 변형되어 실시될 가능성이 있는 것은 자명한 일이다.In addition, although specific embodiments of the present invention have been described and illustrated above, it is obvious that the solar cell structure of the present invention may be variously modified and implemented by those skilled in the art.

예를 들면, 상기 실시예에서는 보호층 표면이 연속된 삼각형 형태로 요철면을 형성하였으나, 요철부 사이에 적은 폭으로 평탄면을 형성시켜 요철부와 교번하는 위치해 형성시킬 수도 있게 된다.For example, in the above embodiment, the surface of the protective layer has a concave-convex surface in a continuous triangular form, but a flat surface is formed in a small width between the concave-convex portions so that the concave-convex portions can be alternately formed.

따라서, 이와 같은 변형된 실시예들은 본 발명의 기술적 사상이나 전망으로부터 개별적으로 이해되어져서는 안되며, 이와 같은 변형된 실시예들은 본 발명의 첨부된 특허청구범위 안에 속한다 해야 할 것이다.Therefore, such modified embodiments should not be understood individually from the technical spirit or the prospect of the present invention, and such modified embodiments should fall within the appended claims of the present invention.

이상에서 살펴본 바와 같은 본 발명은, 태양전지의 전극 보호를 위해 외측에 구성되는 보호층 표면을 요철형태로 형성시킴으로서 태양광의 일정 각도를 이루며 입사시 표면 반사에 따른 광손실을 최소화 하고, 이로 인한 태양광의 투과율을 극대화 하여 태양전지의 효율을 향상시킬 수 있게 된다.The present invention as described above, by forming the surface of the protective layer formed on the outside for protecting the electrode of the solar cell in the form of irregularities to form a certain angle of sunlight and minimize the light loss due to the surface reflection upon incident, thereby The light transmittance can be maximized to improve the efficiency of the solar cell.

특히, 요철부를 좌우 대칭형태의 경사면을 형성하는 연속된 삼각형상으로 형성시킴으로서 태양광의 입사각에 변화에 따른 투과율을 높여줄 수 있게 된다.In particular, by forming the concave-convex portion into a continuous triangular shape forming a symmetrical inclined surface it is possible to increase the transmittance according to the change in the incident angle of sunlight.

Claims (3)

제1도전형의 반도체 기판;A first conductive semiconductor substrate; 상기 반도체 기판과 반대 도전형을 가지며 전면측에 형성되는 제2도전형의 반도체층;A second conductive semiconductor layer having a conductivity type opposite to that of the semiconductor substrate and formed on a front surface thereof; 상기 반도체층의 전면에 형성되는 반사 방지막;An anti-reflection film formed on the entire surface of the semiconductor layer; 상기 반도체층의 전면 및 반도체 기판의 후면에 각각 구성되는 전면전극 및 후면전극;A front electrode and a back electrode respectively formed on the front surface of the semiconductor layer and the rear surface of the semiconductor substrate; 상기 반사 방지막의 전면에 형성되되, 외표면에는 연속되는 요철부를 형성하고 있는 보호층;으로 이루어짐을 특징으로 하는 태양광 입사효율이 개선된 보호층을 갖는 태양전지.Is formed on the front surface of the anti-reflection film, the outer surface of the solar cell having a protective layer with improved solar incident efficiency, characterized in that consisting of; 청구항 1에 있어서,The method according to claim 1, 상기 보호층의 각 요철부는 좌우 대칭형태의 삼각형상을 이루는 단면구조로 이루어지되, 양측 경사면의 경사각도(θt)는 "40°≤θt＜ 90°"의 범위를 만족하도록 형성시킴을 특징으로 하는 태양광 입사효율이 개선된 보호층을 갖는 태양전지.Each uneven part of the protective layer has a cross-sectional structure forming a triangular symmetrical shape, the inclination angle (θt) of both inclined surfaces is formed to satisfy the range of "40 ° ≤θ t <90 °" Solar cell having a protective layer with improved solar incident efficiency. 청구항 1 또는 청구항 2에 있어서,The method according to claim 1 or 2, 상기 보호층은 요철형태로의 형성이 용이한 산화마그네슘 재질로 이루어진 것을 특징으로 하는 태양광 입사효율이 개선된 보호층을 갖는 태양전지.The protective layer is a solar cell having a protective layer with improved solar incidence efficiency, characterized in that the magnesium oxide material is easily formed in the uneven form.
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