KR101199030B1 - 디칼코게나이드 잉크 함유 셀레늄 잉크 및 그 제조방법과 용도 - Google Patents

디칼코게나이드 잉크 함유 셀레늄 잉크 및 그 제조방법과 용도 Download PDF

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Publication number
KR101199030B1
KR101199030B1 KR1020100068577A KR20100068577A KR101199030B1 KR 101199030 B1 KR101199030 B1 KR 101199030B1 KR 1020100068577 A KR1020100068577 A KR 1020100068577A KR 20100068577 A KR20100068577 A KR 20100068577A KR 101199030 B1 KR101199030 B1 KR 101199030B1
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South Korea
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selenium
substrate
source
providing
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KR20110034536A (ko
Inventor
데이비드 모슬리
케빈 칼지아
찰스 스즈만다
데이비드 엘. 토센
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롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨.
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/52—Electrically conductive inks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
KR1020100068577A 2009-09-28 2010-07-15 디칼코게나이드 잉크 함유 셀레늄 잉크 및 그 제조방법과 용도 Active KR101199030B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/568,189 US20110076798A1 (en) 2009-09-28 2009-09-28 Dichalcogenide ink containing selenium and methods of making and using same
US12/568,189 2009-09-28

Publications (2)

Publication Number Publication Date
KR20110034536A KR20110034536A (ko) 2011-04-05
KR101199030B1 true KR101199030B1 (ko) 2012-11-08

Family

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KR1020100068577A Active KR101199030B1 (ko) 2009-09-28 2010-07-15 디칼코게나이드 잉크 함유 셀레늄 잉크 및 그 제조방법과 용도

Country Status (6)

Country Link
US (1) US20110076798A1 (enExample)
EP (1) EP2305599B1 (enExample)
JP (1) JP5627938B2 (enExample)
KR (1) KR101199030B1 (enExample)
CN (1) CN102031521B (enExample)
TW (1) TWI432534B (enExample)

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US8308973B2 (en) * 2009-07-27 2012-11-13 Rohm And Haas Electronic Materials Llc Dichalcogenide selenium ink and methods of making and using same
US8309179B2 (en) * 2009-09-28 2012-11-13 Rohm And Haas Electronics Materials Llc Selenium/group 1b ink and methods of making and using same
US20110215281A1 (en) * 2010-03-03 2011-09-08 Jenn Feng New Energy Co., Ltd Method for preparing cigs inks without surfactant
US8119506B2 (en) * 2010-05-18 2012-02-21 Rohm And Haas Electronic Materials Llc Group 6a/group 3a ink and methods of making and using same
WO2011146115A1 (en) 2010-05-21 2011-11-24 Heliovolt Corporation Liquid precursor for deposition of copper selenide and method of preparing the same
WO2012023973A2 (en) 2010-08-16 2012-02-23 Heliovolt Corporation Liquid precursor for deposition of indium selenide and method of preparing the same
WO2012037389A2 (en) * 2010-09-15 2012-03-22 Precursor Energetics, Inc. Inks with alkali metals for thin film solar cell processes
US8282995B2 (en) * 2010-09-30 2012-10-09 Rohm And Haas Electronic Materials Llc Selenium/group 1b/group 3a ink and methods of making and using same
US9105797B2 (en) 2012-05-31 2015-08-11 Alliance For Sustainable Energy, Llc Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se
KR101922115B1 (ko) 2012-12-27 2018-11-26 삼성전자주식회사 이중 전이금속 다이칼코지나이드 채널을 가진 전계효과 트랜지스터
KR101621743B1 (ko) * 2013-07-19 2016-05-17 주식회사 엘지화학 광흡수층 제조용 ci(g)s 나노 입자의 제조 방법 및 이 방법에 의해 제조된 ci(g)s 나노 입자
US8999746B2 (en) 2013-08-08 2015-04-07 Tokyo Ohka Kogyo Co., Ltd. Method of forming metal chalcogenide dispersion, metal chalcogenide dispersion, method of producing light absorbing layer of solar cell, method of producing solar cell

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US4520010A (en) * 1983-06-02 1985-05-28 Xerox Corporation Process for modifying the electrical properties of selenium, and selenium alloys
AUPP004497A0 (en) * 1997-10-28 1997-11-20 University Of Melbourne, The Stabilized particles
WO2001037324A1 (en) * 1999-11-16 2001-05-25 Midwest Research Institute A NOVEL PROCESSING APPROACH TOWARDS THE FORMATION OF THIN-FILM Cu(In,Ga)Se¿2?
JP2004190089A (ja) * 2002-12-11 2004-07-08 Kyoritsu Kagaku Sangyo Kk 無機ナノ粒子融合又は融着構造体の製造方法及びその融合又は融着構造体
CN100490205C (zh) * 2003-07-10 2009-05-20 国际商业机器公司 淀积金属硫族化物膜的方法和制备场效应晶体管的方法
US7163835B2 (en) * 2003-09-26 2007-01-16 E. I. Du Pont De Nemours And Company Method for producing thin semiconductor films by deposition from solution
US20080124831A1 (en) * 2004-02-19 2008-05-29 Robinson Matthew R High-throughput printing of semiconductor precursor layer from chalcogenide particles
US20070166453A1 (en) * 2004-02-19 2007-07-19 Nanosolar, Inc. High-throughput printing of chalcogen layer
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EP2212916B1 (en) * 2007-11-30 2018-06-06 Nanoco Technologies Limited Preparation of nanoparticle material
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Also Published As

Publication number Publication date
TW201114854A (en) 2011-05-01
JP2011068547A (ja) 2011-04-07
US20110076798A1 (en) 2011-03-31
TWI432534B (zh) 2014-04-01
CN102031521A (zh) 2011-04-27
EP2305599B1 (en) 2013-09-04
KR20110034536A (ko) 2011-04-05
EP2305599A1 (en) 2011-04-06
CN102031521B (zh) 2013-11-06
JP5627938B2 (ja) 2014-11-19

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