KR101192183B1 - LED pakage, metal submount for LED package and fabricating method thereof - Google Patents

Abstract

The present invention relates to an LED package, a submount for an LED package, and a method of manufacturing the same, and more particularly, a metal substrate having a side surface coupled through an insulating layer, and a plating layer and a metal substrate formed on upper and lower portions of the metal substrate. The present invention relates to an LED package composed of an LED chip mounted on the package, and a submount for the LED package. The present invention also relates to a method for manufacturing an LED package, in which a substrate of a metal material is laminated one by one with an insulating layer formed thereon, and then vertically sliced to form a metal submount substrate, and then a plating layer is formed to form an LED chip. The present invention relates to a method of manufacturing an LED multi-chip package by array and mounting, or to manufacture a single LED package through a singulation process.

Description

Metal submount for LED package and LED package and its manufacturing method {LED pakage, metal submount for LED package and fabricating method

The present invention relates to an LED package, a submount for an LED package, and a method of manufacturing the same, and more particularly, a metal substrate having a side surface coupled through an insulating layer, and a plating layer and a metal substrate formed on upper and lower portions of the metal substrate. The present invention relates to an LED package composed of an LED chip mounted on the package, and a submount for the LED package.

The present invention also relates to a method for manufacturing an LED package, wherein a substrate of a metal material is laminated one by one while forming an insulating layer thereon, and then vertically sliced to form a metal submount substrate, and then a plating layer is formed on the cut surface of the metal substrate. The present invention relates to a method of manufacturing an LED multichip package by forming and arraying and mounting an LED chip, or manufacturing a single LED package through a singulation process.

 LEDs have a long life and low power consumption. Therefore, applications such as back light units, indoor / outdoor lighting, and billboards of liquid crystal displays (LCDs) are expanding.

As the application range of LEDs is expanded, technical problems to be solved are also highlighted, and heat dissipation is an important problem. LED used for lighting or backlight unit generates a lot of heat during driving, and LED's performance is rapidly exponentially falling with increasing temperature. Furthermore, if the heat dissipation performance of the LED package is not good, the life of the LED may be shortened, and the high temperature generated by the LED may deteriorate and thermally deform the surrounding components, which may cause fatal damage to the entire system. Therefore, interest in LED packages having excellent heat dissipation performance is increasing.

Conventional methods for packaging LED devices include plastic packages, ceramic packages, packages using ceramic submounts, and chip-on-board packages that directly package on printed circuit boards (PCBs). have. Among the above methods, the plastic package does not effectively dissipate the heat generated by the LED element, and is mainly used for low power LEDs of about 0.2 W. The LEDs that output more than the above include ceramic packages, packages using ceramic submounts, or COB packages. It is used. In particular, high-power LEDs of 1 W or more mainly use ceramic submounts using expensive ceramic substrates having high thermal conductivity such as aluminum nitride.

Typically, substrates used in ceramic submounts for LED packages are aluminum oxide (Al ₂ O ₃ ) and aluminum nitride (AlN). Aluminum oxide substrates are inexpensive, but their thermal conductivity is about 27 W / m? K, which is one eighth of aluminum and one-fifth of copper. On the other hand, the thermal conductivity of the aluminum nitride substrate is 170 to 220 W / m? K is higher than aluminum and the thermal conductivity is about one half of the thermal conductivity of copper, but has the disadvantage of being very expensive.

FIG. 1A is a schematic cross-sectional view of an LED package mounted with an LED chip using a conventional ceramic submount, and FIG. 1B is a schematic cross-sectional view of an LED package mounted with a vertical type LED chip using a conventional ceramic submount. . As can be seen in the structure of the conventional ceramic submount shown in FIGS. 1A and 1B, the ceramic submount has an LED on the bonding pad 3 and a bonding pad for bonding an LED chip or bonding a wire 2 thereon. A circuit (not shown) for electrical connection of the chip should be formed, and an electrode 5 for electrical connection to the outside of the package should be formed under the ceramic submount. In addition, a via hole 4 or a filled via hole should be formed for electrical connection between the upper circuit and the lower electrode. The circuit on the upper portion of the ceramic submount is generally formed by a photolithography process, and since a separate processing process such as laser processing is required to form via holes, the manufacturing process is complicated and the manufacturing cost is very high.

As such, the ceramic submount made of aluminum nitride has a heat dissipation performance. However, the material used is expensive, a complicated manufacturing process, a long manufacturing time, and a high manufacturing cost.

The present invention has been made to solve the problems of the conventional ceramic submount as described above, to provide an economical and excellent heat dissipation and LED package using a low cost and excellent thermal conductivity metal substrate instead of an expensive ceramic substrate. The purpose is.

The present invention also simplifies the complex manufacturing process including the laser processing of the conventional ceramic submount, to form an electrical circuit for driving the LED without a separate circuit formation process and to directly mount the LED chip on the metal substrate to the heat dissipation effect It is an object of the present invention to provide an LED package that can be maximized and a method of manufacturing the same.

The present invention also provides a method for easily and accurately manufacturing a single LED package by a simple process.

The present invention is to provide a LED multi-chip package mounting a plurality of LED chips by a simple process using a metal substrate having a low cost and excellent heat dissipation performance. The present invention also provides an LED multi-chip package that can form a circuit for driving a plurality of LEDs without a separate circuit forming process, LED multi-chip package and a method of manufacturing the LED chip can be mounted accurately and easily To provide.

LED mounting submount according to a preferred embodiment of the present invention to solve the above problems are two metal substrates bonded to each other in the side; An insulating layer formed at a junction between the two metal substrates and electrically insulating the two metal substrates; Plating layers respectively formed on upper surfaces of the two metal substrates; And electrode layers formed on the bottom surfaces of the two metal substrates, respectively. In this case, the LED chip may be mounted on one of the two metal substrates.

According to a preferred embodiment of the present invention, the plating layer is formed by gold or silver plating. The two metal substrates are aluminum (Al), aluminum alloy, copper (Cu), copper alloy, iron (Fe), iron alloy, molybdenum (Mo), molybdenum alloy, tungsten (W), and tungsten alloy, It may be formed of any one of Kovar, Silvar, Invar.

The insulating layer may be formed of a thermosetting resin, preferably epoxy, polyimide, polyamideimide, or PVDF (Polyvinylidene Fluoride).

A diffusion barrier layer of nickel, nichrome (NiCr), or palladium (Pd), or an adhesive layer of nickel, nichrome (NiCr), or tungsten titanium (TiW) may be formed between the metal substrate and the plating layer.

According to another embodiment of the present invention, the plating layer may be photo-etched to leave a portion on which the LED chip is to be mounted and a portion for connecting the bonding wire to form a bonding pad, or a solder mask pattern may be formed on the plating layer. .

LED package according to an embodiment of the present invention is a metal substrate; A second substrate formed of a side surface of the first substrate and coupled to the first substrate; And an insulating layer formed at a junction between the first substrate and the second substrate and electrically insulating the first substrate and the second substrate. A first plating layer formed on the first substrate; A second plating layer formed on the second substrate; And

An LED chip coupled to the first plating layer; .

One of the electrodes of the LED chip is electrically connected to the first plating layer, and the other electrode of the LED chip is connected to the second plating layer by a bonding wire.

According to a preferred embodiment of the present invention, a first electrode and a second electrode are formed on the lower surface of the first substrate and the second substrate, respectively.

According to still another embodiment of the present invention, it is preferable that a solder mask pattern is formed on the first plating layer and the second plating layer.

In the LED package according to another embodiment of the present invention, the first plating layer and the second plating layer are photo-etched leaving a portion where the LED chip is mounted and a portion where the bonding wire is connected to form a bonding pad.

Submount for LED multi-chip package according to an embodiment of the present invention comprises a plurality of metal material substrate sequentially coupled in the side; An insulating layer formed on a bonding surface between the substrates and electrically insulating the substrates; Plating layers formed on upper surfaces of the substrate; And electrode leads respectively formed on an outermost substrate of the plurality of substrates.

It is preferable that the said insulating layer is formed of a thermosetting resin.

According to another embodiment of the present invention, a solder mask pattern is formed on the plating layer. According to an embodiment of the present invention, the plating layer is photo-etched leaving a portion where the LED chip is to be mounted and a bonding wire is connected to form a bonding pad.

LED multi-chip package according to an embodiment of the present invention sequentially comprises a plurality of metal material substrate that is coupled in mutual side; An insulating layer formed on a bonding surface between the substrates and electrically insulating the substrates; Plating layers formed on upper surfaces of the substrate; Electrode leads formed on outermost substrates of the plurality of substrates, respectively; And an LED chip mounted on the substrate. .

The substrate may be aluminum (Al), aluminum alloy, copper (Cu), copper alloy, iron (Fe), iron alloy, molybdenum (Mo), molybdenum alloy, tungsten (W), tungsten alloy, Korvar, Silvar , Invar, and the insulating layer is preferably formed of a thermosetting resin.

In the LED multichip package according to another embodiment of the present invention, a solder mask pattern is formed on the plating layer.

According to a preferred embodiment of the present invention, the plating layer is photo-etched leaving a portion on which the LED chip is to be mounted and a bonding wire is connected to form a bonding pad.

LED package manufacturing method according to an embodiment of the present invention comprises the steps of preparing a plurality of metal substrate; A metal substrate laminate, wherein the insulation layer is interposed between the metal substrates to form an insulation layer between the metal substrates while sequentially stacking the plurality of metal substrates so that the metal substrates are bonded and electrically insulated. Forming a; Slicing the metal substrate stack in a direction perpendicular to a stacking direction to form a metal submount substrate; And forming an upper plating layer on the sliced end surface of the metal submount substrate; .

It is preferable that the said insulating layer is formed of a thermosetting resin.

The forming of the plating layer may be performed by simultaneously plating both surfaces of the sliced end surface of the metal submount substrate to form an upper and a lower plating layer.

The LED package manufacturing method according to an embodiment of the present invention comprises a singulation step of dividing the metal submount substrate formed with the plating layer into individual LED mounting submounts; and mounting the LED chip on the individual LED mounting submounts. ; It is preferable to further include.

LED package manufacturing method according to another embodiment of the present invention comprises the steps of mounting the LED chip on the metal submount substrate; And a singulation step of dividing the LED-mounted metal submount substrate into individual LED packages.

Preferred LED package manufacturing method of the present invention comprises the steps of forming a solder mask pattern on top of the upper plating layer; Arraying and mounting an LED chip on an upper plating layer of the metal submount substrate on which the solder mask pattern is formed; And a singulation step of dividing the LED-mounted metal submount substrate into individual LED packages.

LED package manufacturing method according to another embodiment of the present invention comprises the steps of forming a bonding pad to the upper plating layer using a photolithography process; Arranging and mounting an LED chip on the bonding pad; And a singulation step of dividing the LED-mounted metal submount substrate into individual LED packages.

LED multi-chip package manufacturing method according to an embodiment of the present invention comprises the steps of preparing a plurality of metal substrate; A metal substrate laminate, wherein the insulation layer is interposed between the metal substrates to form an insulation layer between the metal substrates while sequentially stacking the plurality of metal substrates so that the metal substrates are bonded and electrically insulated. Forming a; Slicing the metal substrate stack in a direction perpendicular to a stacking direction to form a metal submount substrate; Forming an upper plating layer on the sliced end surface of the metal submount substrate; And forming electrode leads on substrates disposed at both ends of the metal submount substrate, respectively.

The forming of the plating layer may be performed by simultaneously plating both sliced surfaces of the metal submount substrate to form an upper plating layer and a lower plating layer.

It is preferable that the said insulating layer is formed of a thermosetting resin.

LED multi-chip package manufacturing method according to a preferred embodiment of the present invention further comprises the step of mounting by mounting the LED chip on the upper plating layer.

The LED multichip package manufacturing method includes forming a solder mask pattern on the upper plating layer; And arranging and mounting an LED chip on the upper plating layer.

According to still another embodiment of the present invention, forming a bonding pad using the photolithography process on the upper plating layer; And arranging and mounting an LED chip on the bonding pads.

An electronic device package according to an embodiment of the present invention includes a first substrate made of a metal material; A second substrate formed of a side surface of the first substrate and coupled to the first substrate; An insulating layer formed at a junction between the first substrate and the second substrate and electrically insulating the first substrate and the second substrate; A first plating layer formed on the first substrate; A second plating layer formed on the second substrate; First and second electrodes formed on the bottom surface of the first substrate and the second substrate, respectively; And an electronic device coupled to the first plating layer. It includes.

Electronic device multi-chip package according to an embodiment of the present invention comprises a plurality of metal material substrate that is sequentially coupled in mutual side; An insulating layer formed on a bonding surface between the substrates and electrically insulating the substrates; Plating layers formed on upper surfaces of the substrate; Electrode leads formed on outermost substrates of the plurality of substrates, respectively; An electronic device mounted on the substrate; It includes.

Method of manufacturing a heat dissipation board for package type LED mounting according to an embodiment of the present invention comprises the steps of preparing a plurality of metal substrate; A metal substrate laminate, wherein the insulation layer is interposed between the metal substrates to form an insulation layer between the metal substrates while sequentially stacking the plurality of metal substrates so that the metal substrates are bonded and electrically insulated. Forming a; And slicing the metal substrate stack in a direction perpendicular to the stacking direction. Should include.

The metal may be copper, and may include forming plating layers on both surfaces of the metal substrate after the slicing step.

A heat dissipation board for package type LED mounting for mounting a package type LED according to a preferred embodiment of the present invention comprises: a plurality of metal material substrates which are sequentially bonded to each other; An insulating layer formed on a bonding surface between the substrates and electrically insulating the substrates; And plating layers formed on upper surfaces of the substrate, respectively. It includes, and the package-type LED is mounted on the plating layer.

By the means as described above, the submount and LED package of the present invention uses an inexpensive metal material, forms an electrical circuit for driving the LED without a separate circuit formation process, and heats the LED chip by mounting the LED chip on the metal material board. The effect can be maximized.

The LED package manufacturing method of the present invention also has the effect of easily and accurately producing a single LED package by a simple process.

The multichip package of the present invention and its manufacturing method are LED multichip packages in which a plurality of LED chips are mounted by a simple process using a metal substrate which is inexpensive and has excellent heat dissipation performance. There is an effect to form a circuit for.

The heat dissipation board for package type LED mounting of the present invention has an excellent heat dissipation effect compared to a conventional metal printed circuit board.

1A is a schematic cross-sectional view of an LED package in which an LED chip is mounted using a conventional ceramic submount.
1B is a schematic cross-sectional view of an LED package in which a vertical type LED chip is mounted using a conventional ceramic submount.
2 is a cross-sectional view of the LED package according to an embodiment of the present invention.
3 is a cross-sectional view of an LED package mounted with a vertical type LED chip according to an embodiment of the present invention.
4 is a cross-sectional view of an LED single package in which an LED chip is mounted on a submount in which a solder mask pattern is formed according to an embodiment of the present invention.
5 is a cross-sectional view of an LED single package in which an LED chip is mounted on a submount in which a solder mask pattern is formed according to an embodiment of the present invention.
6 is a cross-sectional view of an LED single package in which an LED chip is mounted on a submount where a bonding pad is formed according to an embodiment of the present invention.
7 is a cross-sectional view of an LED single package in which a vertical type LED chip is mounted on a submount where a bonding pad is formed according to an embodiment of the present invention.
8 is a perspective view of an LED multichip package mounted with LED chips in a submount for a multichip package according to an exemplary embodiment of the present invention.
9 is a perspective view of an LED multichip package mounted with vertical type LED chips in a submount for a multichip package according to an embodiment of the present invention.
10A is a cross-sectional view of an LED multichip package according to an embodiment of the present invention.
10B is a cross-sectional view of a vertical type LED multichip package according to an embodiment of the present invention.
10C is a cross-sectional view of an LED multichip package in which an LED chip is arrayed and mounted on a submount in which a solder masking pattern is formed according to another embodiment of the present invention.
FIG. 10D is a cross-sectional view of an LED multichip package in which a vertical type LED chip is arrayed and mounted on a submount in which a solder masking pattern is formed, according to another exemplary embodiment.
10E is a cross-sectional view of an LED multichip package in which LED chips are arrayed and mounted after forming bonding pads on a submount substrate according to an embodiment of the present invention.
FIG. 10F is a cross-sectional view of an LED multichip package in which vertical type LED chips are arrayed and mounted after bonding pads are formed on a submount substrate according to an embodiment of the present invention. FIG.
It is a perspective view of the metal substrate laminated body which laminated | stacked the metal substrate in the state through the insulating layer.
Fig. 11B is a perspective view showing a state in which the metal substrate laminate is made into a metal submount substrate by slicing thinly in a direction perpendicular to the lamination direction.
11C is a cross-sectional view of a metal submount substrate made through a slicing process in the LED package manufacturing method of the present invention.
11D is a cross-sectional view of a plating layer formed on a metal submount substrate in the LED package manufacturing method of the present invention.
12 is a cross-sectional view of a state in which a plurality of package type LEDs are mounted using a metal substrate according to an embodiment of the present invention.

Hereinafter, with reference to the accompanying drawings will be described in detail the LED package submount and LED package and its manufacturing method according to an embodiment of the present invention.

One embodiment of the LED package of the present invention is formed on the junction of the two metal substrates bonded to each other, the two metal substrates, an insulating layer for electrically insulating the two metal substrates, respectively formed on the upper surface of the two metal substrates A plating layer, an electrode layer respectively formed on the bottom surfaces of the two metal substrates, and an LED chip mounted on one of the two metal substrates. For convenience of description, hereinafter, two metal substrates will be arbitrarily referred to as a first substrate, a second substrate, and a plating layer respectively formed on the two substrates in the first plating layer, the second plating layer, and the like. In the first and second meanings, there is no special significance, and it is usually the same material, but it is a reference for convenience of explanation, and if there is a special meaning, it will be explicitly indicated.

2 is a cross-sectional view of the LED package according to an embodiment of the present invention, the LED package according to an embodiment of the present invention is a metal substrate bonded to the first substrate 10 and the side of the first substrate of the metal material An insulating layer 20 formed on a bonding surface to which the second substrate 11, the first substrate 10, and the second substrate 11 are coupled, and electrically insulate the first substrate from the second substrate; Include. The first plating layer 40 is formed on the first substrate, and the second plating layer 41 is formed on the second substrate.

The LED chip 30 is bonded to the upper portion of the first plating layer 40, and a p (+) electrode of the LED chip 30 is connected to the bonding wire 50. In FIG. 2, the p (+) electrode is connected to the first plating layer by a bonding wire, but the n (−) electrode may be connected to the first plating layer. The other electrode, which is not electrically connected to the first plating layer of the LED chip, is electrically connected to the second plating layer 41 through the bonding wire 50. In FIG. 2, an n (−) electrode is connected to the second plating layer by a bonding wire 50 to the second plating layer.

The plating layers 40 and 41 are formed because there is a problem that wire bonding is not performed on metals such as copper and aluminum. Therefore, a metal that can be wire bonded, such as gold (Au) or silver (Ag), must be plated on the surface of the metal substrate to enable wire bonding. However, depending on the type of metal substrate, gold or silver plating may be difficult on the surface of the metal substrate, so nickel (Ni) plating should be performed under the gold or silver plating layer. For example, in the case of a copper (Cu) substrate, when gold or silver plating is directly on the copper substrate, copper ions diffuse and move to the gold plating layer, thereby causing wire bonding or inferior bonding reliability and oxidizing copper. . Therefore, in order to prevent diffusion of copper ions, it is preferable to form a nickel plating layer as a diffusion barrier between the copper substrate and the gold or silver plating layer . When ions are diffused into the gold plating layer, such as a copper substrate, nickel chromium (NiCr), palladium (Pd) may be used as a diffusion barrier, and another diffusion barrier may be used.

In addition, when gold or silver plating directly on the aluminum substrate, the adhesion between the aluminum substrate and the gold or silver plating layer is low, the plating layer may fall, thereby causing problems in product reliability. Also in this case, it is preferable to form a nickel adhesive layer between a gold or silver plating layer and an aluminum substrate. When adhesion with gold and silver plating layers is a problem, such as an aluminum substrate, nichrome (NiCr), tungsten titanium (TiW), or the like may be used as an adhesive layer, and other adhesive layers may be used.

In addition, a first electrode 47 is formed below the first substrate 10 to electrically connect with an external circuit, and a second portion below the second substrate is electrically connected to a printed circuit board. The electrode 48 is formed. The first electrode layer and the second electrode layer do not necessarily have the same structure as the plating layer, but may have the same structure. In some cases, tin (Sn) or tin plating on nickel may be used. According to another embodiment of the present invention, when copper is used as the metal material substrate, the flux may be coated to facilitate oxidation prevention and soldering without plating on the copper substrate.

3 is a cross-sectional view of an LED package according to another embodiment of the present invention, which is a cross-sectional view of an LED single package 60 in which a vertical type LED chip is mounted. The vertical type LED single package 60 of FIG. 3 is substantially identical in configuration to the LED package of FIG. 2. However, in the vertical type LED chip 31, since the p (+) and n (-) terminals are not formed in the same direction and one of the two terminals is formed under the LED chip 31, the LED chip is bonded to the first substrate. At the same time, the p (+) electrode of the LED chip 30 is directly connected to the first plating layer 40 without passing through the bonding wire. The remaining non-connected electrode, n (−), is electrically connected to the second plating layer 41 through the bonding wire 50. Here, the positions of the p and n terminals may be interchanged.

When the LED chip 30 is assembled as shown in FIG. 2 or FIG. 3, since the two metal substrates 10 and 11 are electrically insulated by the insulating layer 20, the first electrode 42 and the lower first electrode 42 and the first electrode 42 are formed. The two electrodes 43 are electrically insulated from each other, and electricity for driving the LED chip is applied to the LED chip 30 through the first substrate 10 and the second substrate 11, respectively, to drive the LED chip. do. At the same time, since the LED chip is mounted on the first substrate 10 made of metal such as copper or aluminum having high thermal conductivity, heat generated from the LED chip is very quickly and effectively released to the outside through the lower part of the metal submount. . The metal submount according to an embodiment of the present invention is more economically inexpensive while having better or similar thermal conductivity than ceramic submounts made of expensive aluminum nitride material having excellent heat dissipation performance. For example, when a copper substrate is used, heat dissipation performance is improved by at least two times, and can be produced much more economically. Aluminum is similar in heat dissipation performance compared to conventional ceramic submounts, but is much cheaper in terms of cost. In addition, since the electrical circuit for driving the LED is formed using the bonding wire, the plating layer, and the metal substrate without forming a separate circuit, manufacturing cost is reduced.

The LED mounting submount for the LED package of Figure 2 or 3 is formed on the first substrate 10, the side of the first substrate of a metal material for mounting the LED on the top, and is coupled to the first substrate, An insulating layer 20 and the first substrate which are formed on a joining portion of the second substrate 11, the first substrate, and the second substrate of metal material to electrically insulate the first substrate from the second substrate; The first plating layer 40 and the second plating layer 41 are formed on the second substrate, respectively. A first electrode 47 and a second electrode 48 for electrically connecting to the printed circuit board PCB are formed under the first substrate 10 and the second substrate 11, respectively.

The metal substrates 10 and 11 of the submount for LED mounting according to the preferred embodiment of the present invention include aluminum (Al) and aluminum alloys, copper (Cu) and copper alloys, iron (Fe) and iron alloys, molybdenum Various metals and metal alloys such as (Mo) and molybdenum alloys, tungsten (W) and tungsten alloys, Kovar, Silvar, Invar and the like can be used.

CuMo, CuW, Silvar, Kovar, Invar, etc. can be used to minimize the negative consequences of thermal expansion coefficient differences with LED chips. In more detail, substrates generally used for manufacturing LED chips include sapphire, SiC, ZnO, and GaN. The thermal expansion coefficients of these LED substrates are very low, such as 2 ppm / ° C to 8 ppm / ° C, while the thermal expansion coefficients of general metals such as copper and aluminum are very high, such as 18 ppm / ° C to 24 ppm / ° C. When the manufactured LED chip is bonded to a general metal having a high coefficient of thermal expansion, a crack occurs in the LED chip due to a difference in the coefficient of thermal expansion, or a bonding material that bonds the LED chip and a lower metal, such as eutectic solder such as AuSn. Cracks may occur and even damage the LED chip or bonding material. Therefore, the use of CuMo, CuW, Silvar, Kovar, Invar, etc., similar to those of LED substrates, can minimize the above negative result due to the difference in thermal expansion coefficient.

As the insulating layer 20 of the LED mounting submount according to the preferred embodiment of the present invention, various electrical insulators may be used. Preferably, epoxy, polyimide, polyamideimide, PVDF (Polyvinylidene Fluoride), etc. Thermosetting resins can be used.

According to a preferred embodiment of the present invention, the insulating layer 20 preferably has a function of bonding the first substrate 10 and the second substrate 11 as well as the function of the electrical insulating layer. Formation of the insulating layer 20 and bonding of the two metal substrates 10 and 11 may be simultaneously performed. As the insulating layer, a liquid thermosetting resin is cured between the first substrate 10 and the second substrate 11. Bonding or thermocompression bonding the first substrate 10 and the second substrate 11 using a thermosetting resin in a semi-cured state in the form of a sheet, such as a thermosetting adhesive film or prepreg. . The thickness of the insulating layer 20 thus formed is preferably about 1 to 500 micrometers.

In addition, when aluminum, magnesium or titanium is used as the material of the first substrate and the second substrate, the side surfaces of the substrates may be anodized or treated by plasma electrolytic oxidation to obtain an adhesive material such as a thermosetting resin or an adhesive film and an aluminum, magnesium or titanium substrate. It can increase the adhesive force between and improve the insulation.

According to a preferred embodiment of the present invention, the first substrate 10 and the second substrate 11 to increase the adhesion between the first substrate 10 and the second substrate 11 and the insulating layer 20. It is preferable to roughen the adhesive surface of

Sanding, sand blasting, bead blasting, shot blasting, brushing and the like may be used as a method of roughening the adhesive surface of the substrate (10, 11). In general, when the adhesive surface of the metal substrate is roughened by brushing, the surface roughness of the metal substrate is preferably about 1 to 5 micrometers.

According to another embodiment of the present invention shown in Figure 4, it is preferable that the solder mask pattern 43 is formed on the first and second plating layers 40, 41 on the substrate of the LED mounting submount. . The solder mask pattern 43 may be formed on the insulating layer 20 as well as the plating layers 40 and 41.

The solder mask pattern 43 is formed through a printing or developing process, and the remaining portions except for the portion where the LED chip 30 is to be mounted and the portion to be wire bonded are covered by the solder mask. When the solder mask pattern is formed, the plating layer is exposed only at the portion where the LED chip is to be mounted and the portion where the wire bonding is to be performed, so that the LED chip can be mounted at the desired position and wire bonded accurately and easily.

FIG. 5 is a cross-sectional view of a single LED package in which a vertical type LED chip is mounted on an LED mounting submount having a solder mask pattern according to an embodiment of the present invention. Even when mounting a vertical type LED chip, most of the configuration is the same as the LED mounting submount of FIG. 4, and one of the electrodes of the LED chip (here, p (+)) is formed at the bottom of the LED chip coupled with the plating layer. Since the substrate is bonded to the substrate, the upper portion of the first plating layer is covered by the solder mask except for the portion where the LED chip 30 is to be mounted. In the case of the second plating layer, the remaining portion of the LED chip except for the portion to be wire bonded with the n (-) electrode of the LED chip is covered by the solder mask. The effect due to the formation of the solder mask pattern is the same as that of the LED chip can be mounted and wire bonded to the desired position accurately and easily as in the case of FIG.

FIG. 6 is a cross-sectional view of an LED single package in which an LED chip is mounted on a LED mounting submount in which a bonding pad is formed, according to another embodiment of the present invention.

Referring to FIG. 6, the LED mounting submount according to the exemplary embodiment of the present invention is formed on a first substrate 10 made of a metal material and a side surface of the first substrate to mount the LED chip thereon. An insulating layer 20 and a first layer formed on a junction of the second substrate 11, the first substrate, and the second substrate to be electrically coupled with each other to electrically insulate the first substrate from the second substrate. And a bonding pad 44 formed on the substrate and the second substrate. The first electrode 47 and the second electrode 48 are formed under the first substrate and the second substrate, respectively.

A method of forming a bonding pad on the LED mounting submount is to pattern the plating layer on the metal submount using a general photolithography process. If only the part where the LED chip is to be mounted and the part to be wire bonded are left on the metal submount and the remaining part is etched and removed, only the part where the LED chip is to be mounted and the part to be wire bonded are left as the bonding pads. The LED chip can be mounted and wire bonded exactly where you want it.

FIG. 7 is a cross-sectional view of an LED single package according to another embodiment of the present invention, in which a single vertical type LED chip is mounted on an LED mounting submount in which a bonding pad is formed. The embodiment of FIG. 7 differs in that only one electrode is directly bonded to the plating layer, and the other configuration is the same as that of FIG. 6.

On the other hand, there is often a case where a so-called LED multi chip package, which is a method of mounting several LED chips in one package, such as when a high output LED module needs to be made small. By using the LED mounting submount according to the embodiment of the present invention, it is possible to easily and inexpensively make an LED multichip package.

8 and 9 are perspective views schematically showing embodiments of an LED multichip package fabricated using a metal submount for a multichip package.

In the submount for the LED multichip package of FIG. 8, a plurality of metal substrates 100, 101, 102, 103, 104, 105, and 106 are sequentially side-by-side. Insulation layers 200, 201, 202, 203, 204, and 205 that electrically insulate between the substrates are formed on bonding surfaces between the sequentially bonded substrates. In FIG. 8, six metal substrates are sequentially coupled, but in the submount for LED multichip package of the present invention, a plurality of substrates of six or more or six or less can be combined, and thus It may be different. Plating layers are formed on the upper surfaces of the substrates 100, 101, 102, 103, 104, 105, and 106, respectively, and are spaced apart from each other, and the outermost substrates 100, 106 of the plurality of substrates are electrically connected to the outside of the LED package. An electrode lead 70 for the connection is formed.

Examples of the metal for the substrates 100, 101, 102, 103, 104, 105, and 106 include aluminum (Al) and aluminum alloys, copper (Cu) and copper alloys, iron (Fe) and iron alloys, and molybdenum (Mo). ) And molybdenum alloys, tungsten (W) and tungsten alloys, various metals and metal alloys such as Korvar, Silvar, Invar, and the like can be used. CuMo, CuW, Silvar, Kovar, Invar, etc. can be used to minimize the negative consequences of thermal expansion coefficient differences with LED chips.

Various insulating materials may be used as the insulating layers 200, 201, 202, 203, 204, and 205. Preferably, thermosetting resins such as epoxy, polyimide, polyamideimide, and polyvinylidene fluoride (PVDF) may be used. Can be used.

According to a preferred embodiment of the present invention, it is preferable that the insulating layers 200, 201, 202, 203, 204, and 205 simultaneously have the function of bonding the substrates as well as the functions of the electrical insulating layers. Formation of the insulating layer and bonding of adjacent metal substrates may be performed at the same time. As an insulating layer, a liquid thermosetting resin is cured and bonded between the substrates, or a sheet such as a thermosetting adhesive film or prepreg. The substrate is thermocompression-bonded and bonded using a thermosetting resin in a semi-cured state. The thickness of the insulating layers 200, 201, 202, 203, 204, and 205 thus formed is preferably about 1 to 500 micrometers.

In addition, when aluminum, magnesium or titanium is used as the material of the substrate, the surface of these substrates may be anodized or treated by plasma electrolytic oxidation to increase adhesion between an adhesive material such as a thermosetting resin or an adhesive film and an aluminum, magnesium or titanium substrate, and to maintain insulation properties. Can be improved.

According to a preferred embodiment of the present invention, in order to increase adhesion between the substrate and the insulating layer, it is preferable to roughen the adhesive surface by a method such as sanding, sand blasting, bead blasting, shot blasting, and brushing. At this time, the surface roughness of the substrate is preferably about 1 to 5 micrometers.

In the LED multichip package according to an embodiment of the present invention illustrated in FIG. 8, a plurality of LED chips are mounted on each of the metal substrates 100, 101, 102, 103, 104, 105, and 106. In such a multichip package, at least one LED chip may be mounted on each substrate.

10A is a cross-sectional view of an LED multichip package having a plating layer according to an embodiment of the present invention. Referring to FIG. 10A, an LED multichip package according to an exemplary embodiment of the present invention will be described. An LED chip 30 mounted on a metal substrate 100 is bonded to the plating layer 140, and p ( An electrode is connected to the plating layer 140 by a bonding wire. The other electrode, the n (−) electrode, which is not electrically connected to the plating layer 140 to which the LED chip is bonded, is electrically connected to the plating layer 141 on the substrate 101 adjacent to the substrate 100 through a bonding wire. Connected. In this manner, another LED chip 31 is bonded to the plating layer 141 on the substrate 101, and a p (+) electrode is connected to the plating layer 141 by a bonding wire. The n (−) electrode, which is the other electrode that is not electrically connected to the plating layer 141 to which the LED chip 31 is bonded, is electrically connected to the substrate 102 adjacent to the substrate 101 through a bonding wire. . In this way, an LED chip is bonded for each substrate and is connected to an LED chip circuit on an electrically adjacent substrate in series.

The LED chip is not mounted on the rightmost substrate of FIG. 10A, only the bonding wires of the LED chips mounted on the adjacent substrate are electrically connected, and an electrode lead 171 for connecting the LED multichip package and an external power source is provided. Is formed. The opposite electrode lead 170 for connecting the LED multichip package and an external power source is also formed on the leftmost substrate 100.

Such an LED multichip package having a plating layer according to an embodiment of the present invention has an electric circuit for driving an LED as a metal substrate submount itself without a separate circuit formation process, and directly mounts an LED chip on an inexpensive metal substrate. By maximizing the heat dissipation effect.

 As described above, the electrical circuit configuration and operating principle of the LED multichip package of the present invention are basically the same in the LED multichip package of various methods of FIGS. 10B to 10F below, and thus, repeated descriptions are omitted.

FIG. 10B (original 4D) is a cross-sectional view of an LED multichip package to which a vertical type LED chip according to an embodiment of the present invention is applied. The vertical type LED chip is electrically connected to the general LED multichip package of FIG. 10A except that the bonding of the chip and the electrical connection of one electrode to the metal substrate are performed at the same time. The connection and configuration are the same.

To summarize the electrical connection of the LED chips mounted in the LED multichip package, one of the electrodes of the LED chip is connected to the plating layer on which the LED chip is mounted by a bonding wire and the other electrode is connected by the bonding wire to the LED chip. The method is connected to the plating layer of the substrate adjacent to the plating layer to be mounted. In the case of the vertical type LED chip, the only difference is that it is directly connected to the plating layer to be mounted.

FIG. 10C is a cross-sectional view of an LED multichip package in which an LED chip is arrayed and mounted on a submount in which a solder masking pattern is formed on a plating layer according to a preferred embodiment of the present invention, and FIG. 10D is a plating layer according to another embodiment of the present invention. A cross-sectional view of an LED multichip package in which vertical type LED chips are arrayed in a submount on which a solder masking pattern is formed.

The solder mask pattern is formed through a printing or developing process, and since the remaining portions except for the portion where the LED chip is to be mounted and the portion to be wire-bonded are covered by the solder mask, the LED chip is accurately and easily mounted in the desired position and wired. Bonding is possible. The LED multichip package in which the LED chip is arrayed and mounted on a submount in which the solder masking pattern of the present invention is mounted has the same electrical circuit for driving LEDs as the LED multichip package of FIG. 10A. Is formed by. Therefore, by directly mounting the LED chip on an inexpensive metal substrate, it is possible to manufacture the LED multichip package with excellent heat dissipation effect.

 FIG. 10E is a cross-sectional view of an LED multichip package in which an LED chip is arrayed and mounted after a bonding pad is formed on a submount substrate according to an embodiment of the present invention, and FIG. 10F is a bond pad formed on the submount substrate. After the vertical type LED is a cross-sectional view of the LED multi-chip package according to an embodiment of the present invention. The bonding pad is formed by patterning the plating layer on the submount using a general photolithography process. If only the part where the LED chip will be mounted and the part to be wire bonded are left on the submount and the remaining part is etched and removed, only the part where the LED chip will be mounted and the part to be wire bonded will remain as bonding pads. And you can easily mount the LED chip in the desired position and wire bond.

10A to 10F, an electrode layer is formed below the metal substrate. In the LED multichip package according to the preferred embodiment of the present invention, it is preferable that an electrode layer is formed. However, since the electrical connection circuit between the LED chips is formed by the bonding wire and the plating layer on the top of the metal substrate and the connection with the external circuit is possible by the electrode leads 170 and 171, the lower electrode layer may not be formed. In view of manufacturing cost reduction, it is preferable that the electrode layer under the metal substrate is not formed. However, in order to prevent oxidation of the metal substrate, the lower electrode layer is preferably formed.

Hereinafter, a method of manufacturing a metal submount and an LED package according to a preferred embodiment of the present invention will be described with reference to FIGS. 11 to 12.

As shown in FIG. 11A, the metal submount manufacturing method according to the embodiment of the present invention first prepares a plurality of metal substrates, and then forms an insulating layer on one of the plurality of metal substrates and then again forms a metal substrate on the insulating layer. The metal substrate laminate 300 is formed by alternately stacking the metal substrate and the insulating layer in a stacked manner. That is, the metal substrate stack 300 having an insulating layer interposed between the metal substrates to form an insulating layer between the metal substrates while sequentially stacking the plurality of metal substrates to electrically insulate the metal substrates. To form. The insulating layer is to bond the metal substrates to each other and to be electrically insulated from each other.

In addition, when aluminum, magnesium or titanium is used as the material of the first substrate and the second substrate, the surface of these substrates may be anodized or treated by plasma electrolytic oxidation to obtain an adhesive material such as a thermosetting resin or an adhesive film and an aluminum, magnesium or titanium material. It is possible to increase the adhesion between the metal substrates and improve the insulation.

It is preferable to roughen the adhesive surface of the metal substrate in order to increase the adhesion between the metal substrate and the insulating layer.

Sanding, sand blasting, bead blasting, shot blasting, brushing, etc. may be used as a method of roughening the adhesive surface. In general, when the adhesive surface of the metal substrate is roughened by brushing, the surface roughness of the metal substrate is preferably about 1 to 5 micrometers.

According to an embodiment of the present invention, the insulating layer is preferably formed using a thermosetting resin. As the thermosetting resin, epoxy, polyimide, polyamideimide, PVDF (Polyvinylidene Fluoride) and the like are preferable.

As the insulating layer, a liquid thermosetting resin is cured and bonded between metal substrates, or a thermosetting resin in a semi-cured state in the form of a sheet, such as a thermosetting adhesive film or prepreg, is interposed between the metal substrates, and then Press to join. The thickness of the insulating layer 20 thus formed is preferably about 1 to 500 micrometers.

When using a liquid thermosetting resin when laminating a metal substrate, a spacer may be used as an insulating layer to make the thickness of the thermosetting resin to a desired thickness.

Next, the metal substrate stack is sliced in a direction perpendicular to the stacking direction to form a metal submount substrate. As a method of slicing, a slicing method of rotating and cutting a circular blade at high speed and a wire cutting method using a wire are preferable.

FIG. 11B is a perspective view illustrating a state in which the metal substrate laminate is made of a metal submount substrate 400 by slicing thinly in a direction perpendicular to the stacking direction of the metal substrate stack.

FIG. 11C is a cross-sectional view of the metal submount substrate 400 made through the slicing process, and FIG. 11D is a cross-sectional view of a plating layer formed on the upper and lower portions of the metal submount substrate. As shown in FIG. 11D, the next step is to form a plating layer on the sliced cross section of the sliced metal submount substrate. At this time, of course, the plating layer is not formed on the insulating adhesive layer.

In more detail, the plating layer forming step may be described in detail. The plating layer may be immediately formed by washing the metal submount substrate 400 made through the slicing process, or in some cases lapping and polishing processes to improve flatness. The plating layer may be formed by improving the surface roughness and improving the surface roughness. The plating layer may directly form a gold or silver plating layer, and if gold or silver plating is difficult on the surface according to the type of metal substrate, a nickel plating layer is first formed, and then a gold or silver plating layer is formed on the nickel plating layer.

At this time, if the production of the individual metal submount and LED single package in mind, it is preferable to form the electrode layer by plating in the same manner on the lower portion of the metal submount substrate in the same manner as the plating layer forming process. Preferably, the plating layer and the electrode layer may be formed at the same time.

On the other hand, if you want to produce a metal sub-mount and LED multi-chip package for the LED multi-chip package, it is not necessary to form a lower plating layer corresponding to the electrode layer to form an electrode lead for connecting to an external power source on the substrate located at both ends. desirable. However, even in this case, a lower plating layer may be formed on the lower surface of the metal substrate to prevent oxidation of the metal substrate.

When using a copper substrate, it is preferable to form a nickel chromium (NiCr), palladium (Pd) nickel plating layer as a diffusion barrier between the copper substrate and the gold or silver plating layer prior to forming the gold or silver plating layer .

In the case where gold or silver plating is directly applied to the aluminum substrate, it is preferable to form a nickel adhesive layer between the aluminum substrates before the gold or silver plating layer forming step. When adhesion with gold and silver plating layers is a problem, such as an aluminum substrate, nichrome (NiCr), tungsten titanium (TiW), or the like may be used as an adhesive layer, and other adhesive layers may be used.

The metal submount substrate on which the plating layer is formed is made into individual metal submounts through a singulation process such as dicing saw and then mounted on the LED chip, or on the metal submount substrate on which the plating layer is formed. The LED chips are arrayed, mounted, and singulated to make individual LED packages. The latter case is preferred for simplicity of the LED mounting process.

According to another embodiment of the present invention, the metal submount manufacturing method is to form a solder mask pattern on the plating layer formed on the metal submount substrate through a printing or developing process prior to the singulation step or the LED mounting step. It is preferred to further comprise a step.

According to another embodiment of the present invention, the metal submount manufacturing method includes forming a bonding pad by etching the plating layer formed on the metal submount substrate prior to the singulation step or the LED mounting step. The method of forming a bonding pad on the metal submount substrate according to an embodiment of the present invention is to pattern the plating layer on the metal submount substrate using a general photolithography process.

In the above description, the LED mounting submount, the LED package, and a method of manufacturing the same have been described. However, the submount of the present invention is not limited to the use of LED, and any type of electronic device having various two electrodes may be mounted regardless of the type. It is clear that economical and excellent heat dissipation effect can be obtained, and the same effect as that of the LED package of the present invention can be obtained.

As described above, the metal submount of the present invention is basically designed for mounting a LED bare chip, but as shown in FIG. 12, a package type LED 500 is mounted in place of a metal printed circuit board (PCB). It can also be used for. The heat dissipation board for package type LED mounting according to an embodiment of the present invention may be a plurality of metal material substrates 510, 520, 530, 540, 550, 560, 570, 580, 590, 600, 610 that are sequentially coupled to the side surfaces. And insulating layers 511, 521, 531, 541, 551, 561, 571, 581, 591, and 601, which are formed on the bonding surfaces between the substrates and electrically insulate between the substrates. Plating layers 512 may be formed on upper portions of the plurality of metal substrates of the heat dissipation board, and plating layers 513 may be formed on lower portions thereof. In this case, when the material of the metal substrate is copper, the upper and lower plating layers may be omitted, and the upper and lower portions of the metal substrate may be fluxed, and the electrodes 501 and 503 and the heat slug 502 of the package type LED 500 may be fluxed. By soldering to the package type LED is coupled to the heat radiation board is mounted.

The heat dissipation board for package type LED mounting according to the embodiment of the present invention as described above provides an excellent heat dissipation characteristic compared to the conventional metal printed circuit board.

The heat dissipation board according to the preferred embodiment of the present invention is manufactured by the same method as the metal submount for the LED multichip package. However, in order to reduce manufacturing costs, the formation of the upper plating layer and the lower plating layer may be omitted, but it is preferable to form both the upper and lower plating layers to prevent oxidation.

1: LED chip 2: wire
3: bonding pad 4: via hole
5: electrode 6: ceramic substrate
10: first substrate 11: second substrate
20: insulation layer 30: LED chip
31: Vertical Type LED Chip 40: First Plating Layer
41: second plating layer 42: bonding pads
43: solder mask 47: first electrode
48: second electrode 50: bonding wire
60: Vertical Type LED Single Package
100, 101, 102, 103, 104, 105, 106: metal substrate
200, 201, 202, 203, 204, 205: insulation layer
170 and 171: electrode lead 180: plating layer
300: metal substrate laminate 400: metal submount substrate
500: Package Type LED
501, 503 electrode 502 heat slug
510, 520, 530, 540, 550, 560, 570, 580, 590, 600, 610: metal substrate
511, 521,531, 541, 551, 561, 571, 581, 591, 601: insulating layer
512: upper plating layer 513: lower plating layer

Claims (40)

Two metal substrates bonded to each other at a side;
An insulating layer formed at a junction between the two metal substrates and electrically insulating the two metal substrates;
Plating layers respectively formed on upper surfaces of the two metal substrates; And
Electrode layers respectively formed on the lower surfaces of the two metal substrates;
≪ / RTI &
An LED mounting submount, wherein the LED chip is mounted on top of one of the two metal substrates. The method of claim 1,
The plating layer is a submount for LED mounting, characterized in that formed by gold or silver plating. The method according to claim 1 or 2,
The two metal substrates are aluminum (Al), aluminum alloy, copper (Cu), copper alloy, iron (Fe), iron alloy, molybdenum (Mo), molybdenum alloy, tungsten (W), and tungsten alloy, Submount for LED mounting, characterized in that formed by any one of Kovar, Silvar, Invar. The method of claim 1,
The insulating layer is a submount for the LED mounting, characterized in that formed of a thermosetting resin. The method of claim 4, wherein
The thermosetting resin is epoxy, polyimide, polyamideimide, or PVDF (Polyvinylidene Fluoride) characterized in that the LED mounting submount. The method of claim 3, wherein
And a diffusion preventing layer of nickel, nichrome (NiCr), or palladium (Pd) is formed between the metal substrate and the plating layer. The method of claim 3, wherein
An LED mounting submount, characterized in that an adhesive layer of nickel, nichrome (NiCr), or titanium tungsten (TiW) is formed between the metal substrate and the plating layer. 3. The method according to claim 1 or 2,
The plating layer is photo-etched leaving a portion to be bonded to the LED chip and the bonding wire is formed, the bonding pad is formed, or a solder mask pattern is formed on the plating layer, characterized in that formed. A first substrate of metal material;
A second substrate formed of a side surface of the first substrate and coupled to the first substrate; And
An insulating layer formed at a junction between the first substrate and the second substrate and electrically insulating the first substrate and the second substrate;
A first plating layer formed on the first substrate;
A second plating layer formed on the second substrate; And
An LED chip coupled to the first plating layer; / RTI >
One of the electrodes of the LED chip is electrically connected to the first plating layer, and the other electrode of the LED chip is connected to the second plating layer by a bonding wire. The method of claim 9,
LED package, characterized in that the first electrode and the second electrode is formed on the lower surface of the first substrate and the second substrate, respectively. 11. The method according to claim 9 or 10,
The LED package, characterized in that a solder mask pattern is formed on the first plating layer and the second plating layer. 11. The method according to claim 9 or 10,
The first plating layer and the second plating layer is an LED package, characterized in that the bonding pad is formed by photo-etching leaving the portion where the LED chip is mounted and the bonding wire is connected. A plurality of metal material substrates sequentially coupled to the side;
An insulating layer formed on a bonding surface between the substrates and electrically insulating the substrates;
Plating layers formed on upper surfaces of the substrate; And
Electrode leads respectively formed on an outermost substrate of the plurality of substrates;
Submount for LED multichip package, characterized in that it comprises a The method of claim 13,
The insulating layer is a sub-mount for the LED multi-chip package, characterized in that formed of a thermosetting resin. The method according to claim 13 or 14,
The submount for the LED multi-chip package, characterized in that the solder mask pattern is formed on the plating layer.
The method according to claim 13 or 14,
The plating layer is a sub-mount for the LED multi-chip package, characterized in that the bonding pad is formed by photo-etching leaving a portion for the LED chip is mounted and the bonding wire is connected. A plurality of metal material substrates sequentially coupled from each other;
An insulating layer formed on a bonding surface between the substrates and electrically insulating the substrates;
Plating layers formed on upper surfaces of the substrate;
Electrode leads formed on outermost substrates of the plurality of substrates, respectively; And
An LED chip mounted on the substrate;
LED multi-chip package comprising a. 18. The method of claim 17,
The substrate may be aluminum (Al), aluminum alloy, copper (Cu), copper alloy, iron (Fe), iron alloy, molybdenum (Mo), molybdenum alloy, tungsten (W), and tungsten alloy, Korvar, At least one of Silvar and Invar, wherein the insulating layer is formed of a thermosetting resin LED multi-chip package. 18. The method of claim 17,
The LED multi-chip package, characterized in that the solder mask pattern is formed on the plating layer. 18. The method of claim 17,
The plating layer is an LED multi-chip package, characterized in that the bonding pad is formed by photo-etching leaving a portion for the LED chip is mounted and the bonding wire is connected. Preparing a plurality of metal substrates;
A metal substrate laminate, wherein the insulation layer is interposed between the metal substrates to form an insulation layer between the metal substrates while sequentially stacking the plurality of metal substrates so that the metal substrates are bonded and electrically insulated. Forming a;
Slicing the metal substrate stack in a direction perpendicular to a stacking direction to form a metal submount substrate; And
Forming an upper plating layer on the sliced end surface of the metal submount substrate; To
LED package manufacturing method comprising the The method of claim 21,
LED insulation manufacturing method characterized in that the insulating layer is formed of a thermosetting resin The method of claim 21,
The forming of the plating layer is a method of manufacturing an LED package, characterized in that to form the upper and lower plating layer by simultaneously plating both sides of the sliced cross-section of the metal submount substrate. The method according to any one of claims 21 to 23, wherein
A singulation step of dividing the metal submount substrate on which the plating layer is formed into individual LED mounting submounts;
Mounting an LED chip on said individual LED mounting submount; LED package manufacturing method comprising a. The method according to any one of claims 21 to 23, wherein
Arranging and mounting an LED chip on the metal submount substrate; And
A singulation step of dividing the LED-mounted metal submount substrate into individual LED packages;
LED package manufacturing method comprising a The method according to any one of claims 21 to 23, wherein
The method of claim 1, further comprising the step of forming a solder mask pattern on the upper plating layer. 27. The method of claim 26,
Arraying and mounting an LED chip on an upper plating layer of the metal submount substrate on which the solder mask pattern is formed; And
A singulation step of dividing the LED-mounted metal submount substrate into individual LED packages;
LED package manufacturing method comprising a The method according to any one of claims 21 to 23, wherein
Forming a bonding pad on the upper plating layer using a photolithography process;
Arranging and mounting an LED chip on the bonding pad; And
A singulation step of dividing the LED-mounted metal submount substrate into individual LED packages;
LED package manufacturing method comprising a Preparing a plurality of metal substrates;
A metal substrate laminate, wherein the insulation layer is interposed between the metal substrates to form an insulation layer between the metal substrates while sequentially stacking the plurality of metal substrates so that the metal substrates are bonded and electrically insulated. Forming a;
Slicing the metal substrate stack in a direction perpendicular to a stacking direction to form a metal submount substrate;
Forming an upper plating layer on the sliced end surface of the metal submount substrate; And
And forming electrode leads on substrates disposed at both ends of the metal submount substrate, respectively. 30. The method of claim 29,
The forming of the plating layer is a method of manufacturing an LED multi-chip package, characterized in that to form a top plating layer and a bottom plating layer by simultaneously plating the sliced both sides of the metal submount substrate. 30. The method of claim 29,
The insulating layer is a LED multi-chip package manufacturing method, characterized in that formed of a thermosetting resin. The method according to any one of claims 29 to 31,
The LED multi-chip package manufacturing method comprising the step of mounting by mounting the LED chip on the upper plating layer. The method according to any one of claims 29 to 31,
Forming a solder mask pattern on the upper plating layer; And
And arraying and mounting an LED chip on the upper plating layer. The method according to any one of claims 29 to 31,
Forming a bonding pad on the upper plating layer using a photolithography process; And
And arranging and mounting the LED chips on the bonding pads. A first substrate of metal material;
A second substrate formed of a side surface of the first substrate and coupled to the first substrate; And
An insulating layer formed at a junction between the first substrate and the second substrate and electrically insulating the first substrate and the second substrate;
A first plating layer formed on the first substrate;
A second plating layer formed on the second substrate;
First and second electrodes formed on the bottom surface of the first substrate and the second substrate, respectively; And
An electronic device coupled to the first plating layer; Electronic device package comprising a. A plurality of metal material substrates sequentially coupled from each other;
An insulating layer formed on a bonding surface between the substrates and electrically insulating the substrates;
Plating layers formed on upper surfaces of the substrate;
Electrode leads formed on outermost substrates of the plurality of substrates, respectively; And
An electronic device mounted on the substrate;
Electronic device multi-chip package comprising a. Preparing a plurality of metal substrates;
A metal substrate laminate, wherein the insulation layer is interposed between the metal substrates to form an insulation layer between the metal substrates while sequentially stacking the plurality of metal substrates so that the metal substrates are bonded and electrically insulated. Forming a; And
Slicing the metal substrate stack in a direction perpendicular to a stacking direction; Method of manufacturing a heat dissipation board for package type LED mounting for mounting a package type LED comprising a. The method of claim 37, wherein
The metal is a manufacturing method of a heat dissipation board for package type LED mounting, characterized in that the copper. The method of claim 37, wherein
And forming a plating layer on both surfaces of the metal substrate after the slicing step. A plurality of metal material substrates which are sequentially bonded to each other;
An insulating layer formed on a bonding surface between the substrates and electrically insulating the substrates; And
Plating layers formed on upper surfaces of the substrate; / RTI >
A heat dissipation board for package type LED mounting for mounting a package type LED on the plating layer.

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