KR101182312B1 - Liquid Crystal Display Device and Method for Manufacturing the Same - Google Patents

Abstract

The present invention provides a liquid crystal display device having a display gap by preventing a display-related defect by providing a first column spacer for maintaining a cell gap and a second column spacer for dispersing a pressing pressure to prevent plastic deformation of the column spacer against pressing. The liquid crystal display device of the present invention includes a first substrate and a second substrate facing each other, a protrusion formed at a first height at a predetermined portion on the first substrate, and formed to correspond to the protrusion. The corresponding surface with respect to the protrusion has a corresponding surface larger than the protrusion and is formed corresponding to the first column spacer formed on the second substrate and a predetermined portion where the protrusion is not formed, and is formed at a central portion thereof than the first height. A compensation pattern that has a lowest peak of a second height and is gradually lowered relative to the second height toward the edge, and corresponds to the compensation pattern And a liquid crystal layer formed between the formed second column spacer and the first and second substrates.

Bumps, column spacers, crush tests, bad touch, halftone mask, compensation pattern, diffraction exposure mask, circular slit, uniformity, gradient slit

Description

Liquid crystal display device and method for manufacturing the same

1 is a cross-sectional view of an LCD including a column spacer.

2A and 2B are plan and cross-sectional views illustrating a touch failure of a liquid crystal display including a column spacer.

3 is a cross-sectional view of a liquid crystal display device in which gravity failure occurs.

4 is a cross-sectional view schematically showing the protrusion structure of the liquid crystal display of the present invention.

5 is a plan view showing a liquid crystal display of the present invention.

FIG. 6 is a cross-sectional view taken along lines II ′ and II ′ II ′ of FIG. 5 according to an example; FIG.

7 is a plan view showing a portion of a mask for forming the compensation pattern of FIG.

8A is a cross-sectional view taken along line IV-IV 'of the mask of FIG.

8B is a cross-sectional view illustrating the shape of a compensation pattern formed using the mask of FIG. 8A.

9A is a cross-sectional view of a mask for forming a compensation pattern of the liquid crystal display of the present invention.

9B is a cross-sectional view illustrating a compensation pattern of the liquid crystal display of the present invention formed using the mask of FIG. 9A.

10 is a plan view of a mask for forming a compensation pattern of the liquid crystal display of the present invention.

FIG. 11 is a cross-sectional view of column spacers of the liquid crystal display according to the present invention and protrusions and compensation patterns corresponding to the lines I to I 'and II to II' of FIG. 5.

12A to 12E are cross-sectional views illustrating a process of forming thin film transistors, protrusions, and compensation patterns on cross sections taken along lines II through II 'and III through III' of FIG. 5.

* Description of the Signs of the Major Parts of the Drawings *

100: first substrate 101: gate line

101a: gate electrode 102: data line

102a: source electrode 102b: drain electrode

103: pixel electrode 103a: first storage electrode

104: common electrode 104a: common line

104b: second storage electrode 105: gate insulating film

106: protective film 106a: contact hole

120: protrusion 120a: semiconductor layer pattern

120b: source / drain metal layers 130, 140: compensation pattern

200: second substrate 210: first column spacer

220: second column spacer 400: mask

405: Shading part 410: Slit

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and in particular, having a first column spacer for holding a cell gap and a second column spacer for dispersing the pressing pressure to prevent plastic deformation of the column spacer with respect to the pressing. The present invention relates to a liquid crystal display and a manufacturing method thereof.

(PDP), Electro Luminescent Display (ELD), Vacuum Fluorescent (VFD), and the like have been developed in recent years in response to the demand for display devices. Display) have been studied, and some of them have already been used as display devices in various devices.

Among them, LCD is the most widely used as the substitute for CRT (Cathode Ray Tube) for mobile image display device because of its excellent image quality, light weight, thinness, and low power consumption. In addition to the use of the present invention has been developed in various ways such as a television and a computer monitor for receiving and displaying broadcast signals.

In order to use such a liquid crystal display as a general screen display device in various parts, it is a matter of how high quality images such as high definition, high brightness and large area can be realized while maintaining the characteristics of light weight, thinness and low power consumption. Can be.

The general liquid crystal display device is comprised from the 1st board | substrate and the 2nd board | substrate bonded by the fixed space, and the liquid crystal layer injected between the said 1st board | substrate and the 2nd board | substrate.

In more detail, the first substrate has a plurality of gate lines in one direction and a plurality of data lines at regular intervals in a direction perpendicular to the gate line to define a pixel area. A pixel electrode is formed in each of the pixel regions, and a thin film transistor is formed at a portion where the gate line and the data line cross each other, and the data signal of the data line is applied to each pixel electrode according to a signal applied to the gate line. To apply.

In addition, a black matrix layer is formed on the second substrate to block light in portions other than the pixel region, and R, G, and B color filter layers are formed on portions corresponding to the pixel regions. The common electrode is formed on the color filter layer to implement an image.

In the liquid crystal display as described above, the liquid crystal of the liquid crystal layer formed between the first and second substrates is aligned by an electric field between the pixel electrode and the common electrode, and the light passes through the liquid crystal layer according to the degree of alignment of the liquid crystal layer. You can express the image by adjusting the amount of.

Such a liquid crystal display is called a twisted nematic (TN) mode liquid crystal display, and the TN mode liquid crystal display has a disadvantage of having a narrow viewing angle, and thus an in-plane (IPS: In-Plane) for overcoming the disadvantages of the TN mode. Switching mode liquid crystal display device has been developed.

In the transverse electric field (IPS) mode liquid crystal display, a pixel electrode and a common electrode are formed parallel to each other at a predetermined distance in a pixel area of the first substrate so that a transverse electric field (horizontal electric field) is generated between the pixel electrode and the common electrode. The liquid crystal layer is aligned by the lateral electric field.

Meanwhile, spacers are formed between the first and second substrates of the liquid crystal display device formed as described above to maintain a constant gap between the liquid crystal layers.

Such spacers are divided into ball spacers or column spacers according to their shape.

The ball spacer has a spherical shape, is distributed and manufactured on the first and second substrates, the movement is relatively free even after the bonding of the first and second substrates, and the contact area with the first and second substrates is small.

On the other hand, the column spacer is formed in an array process on the first substrate or the second substrate, and is fixed in a pillar shape having a predetermined height on the predetermined substrate. Therefore, the contact area with the 1st, 2nd board | substrate is relatively large compared with a ball spacer.

Hereinafter, a liquid crystal display having a conventional column spacer will be described with reference to the accompanying drawings.

1 is a cross-sectional view illustrating a liquid crystal display including a column spacer.

As shown in FIG. 1, the liquid crystal display device 10 including the column spacer includes a first substrate 30 and a second substrate 40 facing each other, and between the first and second substrates 30 and 40. And a liquid crystal layer (not shown) filled between the formed column spacer 20 and the first and second substrates 30 and 40.

On the first substrate 30, the gate lines 31 and the data lines (not shown) are arranged perpendicularly to each other to define pixel regions, and the gate lines 31 and the data lines cross each other. A thin film transistor TFT is formed, and a pixel electrode (not shown) is formed in each pixel area.

The black matrix layer 41 is formed on the second substrate 40 to correspond to an area except the pixel area, and the color filter layer 42 on the stripe corresponding to the pixel areas on the vertical line parallel to the data line is formed. The common electrode or overcoat layer 43 is formed on the front surface.

Here, the column spacer 20 is formed corresponding to a predetermined position on the gate line 31.

In addition, a gate insulating layer 36 is formed on the entire surface of the substrate including the gate line 31 on the first substrate 30, and a passivation layer 37 is formed on the gate insulating layer 36.

2A and 2B are plan and cross-sectional views illustrating a touch failure of a liquid crystal display including a column spacer.

As shown in FIGS. 2A and 2B, when the liquid crystal display device including the above-described conventional column spacer touches the surface of the liquid crystal panel 10 in a predetermined direction using a hand or other object, the touched portion Stain occurs at Such spots are referred to as spot spots generated at the time of touch, and are referred to as touch spots, and are also referred to as touch defects because spots are observed on the screen.

Such a touch failure is considered to be large because the contact area between the column spacer 20 and the first substrate 1 facing the column spacer 20 is larger than the structure of the previous ball spacer. That is, since the column spacer 20 formed in a cylindrical shape compared to the ball spacer has a large contact area with the first substrate 1 as shown in FIG. 2B, the first and second substrates 1 and 2 are touched. After the liver is shifted, it takes a long time to restore to the original state, so the stain remains until the original state is restored.

3 is a cross-sectional view illustrating a liquid crystal display device in which gravity failure occurs.

As shown in FIG. 3, the liquid crystal 3 is filled between the first and second substrates 1 and 2 facing each other, and the liquid crystal in which the column spacer 20 is formed at a predetermined portion between the first and second substrates. When the display device is in an upright state and is in a high temperature environment, when the liquid crystal is thermally expanded and the cell gap increases according to the height of the column spacer 20, the liquid crystal 3 flows down the lower end to bulge the lower end. Visible gravity failures are observed.

The conventional liquid crystal display including the column spacer has the following problems.

First, since the contact area between the column spacer and the opposing substrate is large, when the substrate is shifted during the touch due to the large frictional force, it takes a long time to recover to the original state, and touch failure is observed during the restoration time.

Second, when the liquid crystal panel including the column spacer is upright, when it is placed in a high temperature environment, thermal expansion of the liquid crystal occurs. The phenomenon of visual opacity is observed.

The present invention has been made to solve the above problems by having a first column spacer for maintaining the cell gap, and a second column spacer for dispersing the pressing pressure to prevent plastic deformation of the column spacer against the pressing, SUMMARY OF THE INVENTION An object of the present invention is to provide a liquid crystal display and a method of manufacturing the same.

In order to achieve the above object, the liquid crystal display device of the present invention includes a first substrate and a second substrate facing each other, a protrusion formed at a first height at a predetermined portion on the first substrate, and formed to correspond to the protrusion. And a first column spacer formed on the second substrate having a corresponding surface larger than the protrusion and having a corresponding surface larger than the protrusion, and corresponding to a predetermined portion where the protrusion is not formed. A liquid crystal formed between the second column spacer and the first and second substrates having a compensation pattern that has a peak of a second height lower than a height and gradually decreases with respect to the second height toward the edge, and the second column spacer formed corresponding to the compensation pattern It is characterized by including a layer.

The semiconductor device may further include a gate line and a data line defining a pixel area on the first substrate.

The protrusion and the compensation pattern are formed on the gate line.

And a common line formed on the first substrate in the same direction as the gate line on the same layer as the gate line.

The protrusion and the compensation pattern are formed on the gate line or the common line.

A thin film transistor is further formed at an intersection of the gate line and the data line.

The thin film transistor may include a gate electrode protruding from the gate line, a source electrode protruding from the data line, a drain electrode spaced apart from the source electrode by a predetermined distance, and an upper portion of the gate electrode and a lower portion of the source / drain electrode. And a semiconductor layer contacting the source electrode and the drain electrode to form a channel between the source electrode and the drain electrode.

The protrusion is formed by sequentially stacking a semiconductor layer pattern of the same layer as the semiconductor layer and a source / drain metal layer of the same layer as the source / drain electrode.

The compensation pattern is formed of a semiconductor layer pattern on the same layer as the semiconductor layer.

The compensation pattern may include a semiconductor layer pattern having the same layer as the semiconductor layer and a source / drain metal pattern partially etched with the same layer as the source / drain metal layer.

In addition, the liquid crystal display device of the present invention for achieving the same object includes a first substrate and a second substrate facing each other, a gate line and a data line formed to cross each other on the first substrate to define a pixel region, A common line formed parallel to the gate line, a common electrode and a pixel electrode alternately formed in the pixel region, a thin film transistor formed at an intersection of the gate line and the data line, and a protrusion formed at a predetermined portion of the gate line; And a first column spacer formed on a second substrate having a corresponding surface corresponding to the protrusion and having a corresponding surface larger than the protrusion, and corresponding to a gate line predetermined portion of the portion where the protrusion is not formed. It is formed to have a peak of a lower height than the projection at the center portion and toward the edge the maximum In yirueojim to a liquid crystal layer formed between the compensation pattern that is gradually lowered as compared with the point, and a second column spacer and the first and second substrates are formed corresponding to the compensation pattern it has a further feature.

The thin film transistor may include a gate electrode protruding from the gate line, a source electrode protruding from the data line, a drain electrode spaced apart from the source electrode by a predetermined distance, and an upper portion of the gate electrode and a lower portion of the source / drain electrode. And a semiconductor layer contacting the source electrode and the drain electrode to form a channel between the source electrode and the drain electrode.

The protrusion is formed by sequentially stacking a semiconductor layer pattern of the same layer as the semiconductor layer and a source / drain metal layer of the same layer as the source / drain electrode.

The compensation pattern is formed of a semiconductor layer pattern on the same layer as the semiconductor layer.

The compensation pattern may include a semiconductor layer pattern having the same layer as the semiconductor layer and a source / drain metal pattern partially etched with the same layer as the source / drain metal layer.

In addition, the manufacturing method of the liquid crystal display device of the present invention for achieving the same object comprises the steps of preparing a first substrate and a second substrate, forming a gate line on the first substrate, and including the gate line Sequentially depositing a gate insulating film, a semiconductor layer material layer, and a source / drain metal material layer on the first substrate, applying a photoresist film to a first thickness on the source / drain metal material layer, and selectively selecting the photoresist film. And a first photoresist pattern having a first thickness remaining corresponding to a predetermined portion of the gate line, and a second photoresist pattern gradually lowered toward the edge with a lower peak than that of the first thickness at a central portion thereof. And forming the source / drain metal material layer using the first photoresist pattern and the second photoresist pattern as masks; Selectively etching the conductor layer material layer to form protrusions on portions corresponding to the first photoresist pattern, and forming compensation patterns on portions corresponding to the second photoresist pattern; and Forming a first column spacer on the second substrate and forming a second column spacer on the second substrate at a portion corresponding to the compensation pattern; any one of the first substrate and the second substrate; It is another feature that comprises the step of dropping the liquid crystal on the phase and the step of inverting and bonding the remaining substrate of the first and second substrate, the liquid crystal is not dropped.

The first photoresist pattern and the second photoresist pattern are formed using a diffraction exposure mask.

A portion corresponding to the first photoresist pattern of the mask is formed as a light shielding portion, and a portion corresponding to the second photoresist pattern is a semi-transmissive portion including a plurality of circular slits formed to gradually increase in slit width from the center to the edge. It is made of.

The photosensitive film is made of a positive photosensitive material.

A portion corresponding to the first photoresist pattern of the mask is formed as a transmissive portion, and a portion corresponding to the second photoresist pattern includes a plurality of circular slits that are formed at the edge of the mask and gradually decrease in slit width.

The photosensitive film is made of a negative photosensitive material.

In the step of selectively patterning the photoresist layer, at the same time as forming the first and second photoresist pattern, protruding from the third photoresist pattern and the third photoresist pattern in which the first thickness remains in the direction crossing the gate line. Forming a fourth photoresist pattern and a fifth photoresist pattern spaced apart from the fourth photoresist pattern by a predetermined interval, and a second lower than the first thickness in a predetermined portion of the gate electrode between the fourth and fifth photoresist patterns The method may further include forming a sixth photoresist pattern that is flat in thickness.

The source / drain metal material layer and the semiconductor layer material layer are selectively etched using the third to sixth photoresist pattern as a mask to form a data line at a portion corresponding to the third photoresist pattern, and the fourth The method may further include forming a source / drain electrode corresponding to the photoresist pattern and the fifth photoresist pattern, and defining a channel region between the source / drain electrodes corresponding to the sixth photoresist pattern.

In addition, the manufacturing method of the liquid crystal display device of the present invention for achieving the same object comprises the steps of preparing a first substrate and a second substrate, and forming a gate line and a common line parallel to and spaced apart on the first substrate Depositing a gate insulating film, a semiconductor layer material layer, and a source / drain metal material layer on a first substrate including the gate line and the common line, and then depositing a photoresist film on the source / drain metal material layer. Applying a thickness, and selectively patterning the photoresist to form a first photoresist pattern in which all of the first thickness remains corresponding to a predetermined portion of the gate line or the common line, and at the center portion thereof, Forming a second photoresist pattern having a low peak and gradually lowering toward an edge; and wherein the first photoresist pattern and the second photoresist are formed. By using a pattern as a mask, the source / drain metal material layer and the semiconductor layer material layer are selectively etched to form protrusions on a portion corresponding to the first photoresist pattern, and a compensation pattern on a portion corresponding to the second photoresist pattern Respectively forming a first column spacer on the second substrate of the portion corresponding to the protrusion and forming a second column spacer on the second substrate of the portion corresponding to the compensation pattern; And dropping a liquid crystal onto any one of the first substrate and the second substrate, and inverting and bonding the remaining substrates of the first and second substrates on which the liquid crystal is not dropped. There is a characteristic.

Hereinafter, a liquid crystal display and a manufacturing method thereof according to the present invention will be described in detail with reference to the accompanying drawings.

4 is a cross-sectional view schematically illustrating the protrusion structure of the liquid crystal display of the present invention.

As shown in FIG. 4, the liquid crystal display of the present invention including the protrusion structure includes a first substrate 60 and a second substrate 70 facing each other, and a column spacer 80 formed at a predetermined portion on the first substrate 60. ), Protrusions 85 formed on the second substrate 70 and the first and second substrates to have a relatively smaller volume than the column spacers 80 and to partially contact the column spacers 80. It includes a liquid crystal layer (not shown) filled between (60, 70).

As such, when the protrusions 85 are included, the first substrate 60 or the second substrate 60 may be touched when the surface of the first substrate 60 or the second substrate 70 is touched (or rubbed in one direction). When the substrate 70 is shifted relative to the counter substrate, the contact area between the column spacer 80 and the protrusion 85 is formed on the upper surface of the column spacer 80 (the first substrate 60 on which the column spacer is formed). In this case, the surface corresponding to the column spacer on the surface of the first substrate 60 is reduced to the upper area of the relatively small protrusions 85 as compared to the lower surface. The friction force between the column spacer 80 and the second substrate 70 that is the opposite substrate is reduced. Therefore, when the first substrate 60 or the second substrate 70 is pushed in one direction by the touch, restoration to the original state is easy.

In the structure including the protrusions 85, when the first and second substrates 60 and 70 are bonded to each other, the change of the shape of the column spacer 80 corresponding to the protrusions 85 will be described. The force of 80 is concentrated only on the portion corresponding to the protrusion 85 so that a color filter layer (not shown) and a black matrix layer (not shown), which are lower layers including the column spacer 80, are pressed together. As such, when a single or a plurality of layers are pressed, when the cell gap is increased by thermal expansion of the liquid crystal when the liquid crystal panel is placed in a high temperature environment, the column spacer 80 and the following layers are pressed again to the extent that the layers are pressed. It can be restored to the original state and can support between the first and second substrates 60 and 70, so that the gravity failure caused by the liquid crystal sag downward can be improved as compared to the structure without the projections.

However, in the case of using a projection having a small volume and surface area corresponding to the center of the column spacer having such a shape, when the column spacer and the lower layers are pressed by the projection, the projection 85 corresponds to the column spacer 80. If the part of the intensive force is applied, and the contact pressure between the first and second substrates 60 and 70 becomes excessive at the time of contact (when the pressing force on the rear surface of one of the first and second substrates is excessive) ), The column spacer 80 is pressed by the protrusions 85 and deforms, which does not return to its original state.

The pressing operation may be performed in a separate pressing test before the release of the liquid crystal display, or may be performed in an assembly process of assembling the liquid crystal display module.

FIG. 5 is a plan view illustrating a liquid crystal display of the present invention, and FIG. 6 is a cross-sectional view of a structure taken along line II ′ and line II ′ of FIG. 5 according to an example.

5 and 6, the liquid crystal display of the present invention is largely filled between the first substrate 100 and the second substrate 200 facing each other, and the first and second substrates 100 and 200. And a liquid crystal layer (not shown).

On the first substrate 100, a thin film transistor TFT formed at an intersection of the gate line 101 and the data line 102 and the gate line 101 and the data line 102 that cross each other to define a pixel area. ), A first storage electrode 103a electrically connected to the drain electrode 102b of the thin film transistor TFT, a pixel electrode 103 branched from the first storage electrode 103a, and the pixel electrode. A branched common electrode 104 alternated with 103, and a common line formed in the pixel area in parallel with and adjacent to the inlet gate line 101 and the front gate line (not shown), respectively; And a second storage electrode 104b connected to the common line 104a and the common electrode 104 and overlapping the first storage electrode 103a.

In this case, the thin film transistor TFT is defined in a region between a source electrode 102a and a drain electrode 102b having a 'U' shape, and the channel is formed along the inside of the shape of the source electrode 102a. It is defined as U '. The thin film transistor TFT may include a gate electrode 101a protruding from the gate line 101, a 'U' source electrode 102a protruding from the data line 102, and the 'U'. The drain electrode 102b is formed to be spaced apart from the female source electrode 102a by a predetermined interval and enters into the 'U'-shaped source electrode 102a. A semiconductor layer (not shown) is further formed below the data line 102, the source electrode 102a, the drain electrode 102b, and the channel region between the source electrode 102a and the drain electrode 102b. . Here, the semiconductor layer is formed of a laminate of an amorphous silicon layer (not shown) and an n + layer (impurity layer) (not shown) from below, and corresponds to a region between the source electrode 102a and the drain electrode 102b. In the channel region, the n + layer (impurity layer) is removed. The semiconductor layer may be selectively formed only under the source / drain electrodes 102a and 102b and the region therebetween, or the data line 102, the source electrode 102a and the region except for the channel region. It may be formed under the drain electrode 102b. Meanwhile, as illustrated, the shape of the source electrode 102a is 'U', and the liquid crystal display having the 'U' channel has been described. However, the liquid crystal display of the present invention is the source electrode 102a. May be formed to protrude from the data line 102 in a '-' shape, or may be formed in other shapes.

Here, the gate line 101, the common line 104a and the common electrode 104 are formed of the same metal on the same layer.

A gate insulating film 105 is interposed between the gate line 101 and the semiconductor layer, and a protective film 106 is interposed between the data line 102 and the pixel electrode 103.

Meanwhile, the second storage electrode 104b connected to the common line 104a passing through the pixel region, the first storage electrode 103a formed thereon, and the gate insulating layer 105 and the passivation layer interposed between the two electrodes. 106 constitutes a storage capacitor.

Here, the drain electrode 102b and the first storage electrode 103a formed between the different layers may be contact holes 106a formed by removing the passivation layer 106 on an upper portion of the drain electrode 102b. Contact via).

In addition, a predetermined portion on the gate line 101 or the common line 104a may be formed on the same layer as the semiconductor layer pattern 120a and the source / drain electrodes 102a and 102b. A protrusion 120 in which the source / drain metal layer 120b is stacked is formed.

Here, the thickness of the semiconductor layer pattern 120a is about 0.2 to 0.3 μm, and the thickness of the source / drain metal layer 120b is about 0.2 to 0.4 μm, and the remaining gate lines 101 on which the protrusion 120 is not formed are formed. The step where the protrusion 120 is formed as compared to the site on the step) is formed about 0.4 ~ 0.7㎛. The liquid crystal display including the protrusions 120 may include a first column spacer formed on the protrusions 120 and the second substrate 200 when the first and second substrates 100 and 200 are bonded to each other to form a cell gap. 210 corresponds. At this time, the upper surface of the protrusion 120 is relatively the upper surface of the first column spacer 210 (in this case, the first column spacer 210 formed on the second substrate 200) 2, the surface corresponding to the substrate 200 is assumed to be a lower surface. In this case, when the first column spacer 210 is in contact with the protrusion 120, the surface of the protrusion 120 corresponds to the upper surface of the protrusion 120. 1 The column spacer 210 and the protrusion 120 are in contact with each other.

Here, a passivation layer 106 formed in the remaining region except for the contact hole 106a is further disposed on the protrusion 120 to contact the first column spacer 210 formed on the second substrate 200. The portion to be corresponds to the protective layer 106 on the protrusion 120.

In addition, a compensation pattern 130 is formed on a predetermined portion of the remaining gate line 101 where the protrusion 120 is not formed. The compensation pattern 130 is formed on the same layer as the semiconductor layer pattern 120a and is formed at a relatively lower height than the protrusion 120.

Although the protrusion 120 and the compensation pattern 130 are illustrated as being formed in the gate line 101 in the drawing, the protrusion 120 and the compensation pattern 130 may be formed in the common line 104a.

On the other hand, on the second substrate 200 facing the first substrate 100, a black matrix layer (not shown) formed corresponding to a region (gate line and data line region) except for the pixel region, and the second An overcoat layer (not shown) for planarization is formed on the color filter layer (not shown) formed on the substrate 200 and the second substrate 200 including the black matrix layer and the color filter layer.

In addition, a first column spacer 210 is formed on the overcoat layer corresponding to the protrusion 120, and the compensation pattern 130 on the gate line 101 of the predetermined portion where the protrusion 120 is not formed. The second column spacer 220 is formed on the overcoat layer of the portion corresponding to the second coat spacer 220.

Here, the first column spacer 210 and the second column spacer 220 are formed at the same height on the overcoat layer. When the first column spacer 210 and the protrusion 120 are in contact with each other to form a cell gap, a state in which the first column spacer is spaced apart from the first substrate 100 by a predetermined distance is maintained so that the entire column spacer and the first substrate ( Lower the contact area ratio with 100). Therefore, the touch is in a state where the protrusion 120 and the first column spacer 210 are in contact with each other, even if a touch occurs between the first and second substrates 100 and 200 when the touch is pushed or swung in one direction. Since the contact area is small, the restoration to the original state is easy, and the luminance non-uniformity caused by the touch is prevented.

In addition, in the pressing test by applying a predetermined pressure or more, the first column spacer 210 is in contact with the corresponding portion of the protrusion 120, and as the pressure increases, the second column spacer 220 is connected to the first substrate 100. In addition to contacting the corresponding site on the), the contact site can be increased to disperse the pressure at the time of pressing. At this time, the compensation pattern 130 reduces the step with the protrusion 120 to some extent, so that the second column spacer 220 is the first substrate while the first column spacer 210 is deformed during the pressing test. An upper portion of the substrate 100 may be in contact with each other, and when the second column spacer 220 corresponds to the first substrate 100, the column spacers may be in contact with the first substrate in a larger area. Therefore, the pressure is concentrated on the first column spacer 210 due to the protrusion 120 while contacting the first column spacer 210 and the protrusion 120. Even if a deformation occurs, the second column spacer 220 may correspond to the first substrate 100 before the deformation becomes severe (before it cannot be restored to the original state), so that even after the pressing test, the column spacers ( 210, 220 may be restored to its original state.

Meanwhile, the first and second column spacers 210 and 220 may be formed in various shapes such as a polygonal shape such as a circular cross section or a square. In consideration of the alignment margin in the process, it may be advantageous to form a circular or regular polygon.

7 is a plan view illustrating a portion of a mask for forming the compensation pattern of FIG. 6, FIG. 8A is a cross-sectional view of the mask of FIG. 7, and FIG. 8B is a cross-sectional view showing the shape of the compensation pattern formed using the mask of FIG. 8A. to be.

The compensation pattern 130 is formed at the same time as the source / drain electrodes 102a / 102b of the thin film transistor and the semiconductor layer (see 107a of FIG. 12E) under the source / drain electrodes. That is, the source / drain electrodes 102a / 102b and the semiconductor layer 107a are formed using the same mask, wherein the exposure using the mask is performed on the source / drain electrode material layer (see 112 in FIG. 12A). It is made by exposing to the photosensitive film pattern (refer 113A of FIG. 12C) apply | coated on the upper part. During this exposure, the photosensitive film pattern (the portion having the low step of 113a in FIG. 12C) on the compensation pattern corresponds to the portion of the plurality of circular slits 310a to 310e of the mask 300 on the upper portion of the mask. During diffraction exposure above the channel portions 102a and 102b of the transistor, they are exposed to the same thickness and patterned.

The exposure process may be performed by using a diffraction exposure mask 300 including the circular slits 310a to 310e shown in FIGS. 7 and 8A or by applying a halftone material to the circular slits 310a to 310e. By using a halftone mask (not shown) that can be exposed by adjusting the exposure amount of light passing through the halftone material correspondingly.

In this case, the mask 300 may be defined by dividing the area into a light blocking part 305, a semi-transmissive part (circular slit corresponding part), and a transmissive part (not shown). A portion of the mask 300 illustrated in FIGS. 7 and 8A is a portion of the compensation pattern 130 formed in a plurality of circular slits 310a to 310e having concentric circles, having the same spacing, and having different radii. Is defined. The portion corresponding to the transmissive portion is a portion corresponding to the data line 102, the source / drain electrodes 102a / 102b and the protrusion 120, and the portion corresponding to the transflective portion is between the channel portion 102a / 102b and A portion corresponding to the compensation pattern 130 and the light blocking portion 305 is a portion corresponding to the remaining portion.

Here, the mask 300 is formed on the assumption that the corresponding photoresist film is a negative photosensitive material, and in the case where the photoresist is a positive photosensitive material, the mask 300 will be defined as a reversed phase. That is, when the photoresist film is a particle photosensitive material, a portion except for the circular slits 310a to 310e may be defined as a transmissive portion.

When exposing and developing the photoresist layer on the source / drain electrode material layer by using the mask 300 (negative photosensitive photoresist film), portions corresponding to the light blocking portion 305 may be the source / drain electrode material layer 112 and All of the semiconductor layer material layers (see 107 of FIG. 12A) are etched, and portions corresponding to the transflective portions may be selectively etched only on the source / drain electrode material layers, and portions corresponding to the remaining transmissive portions (not shown) may be applied. The remaining photoresist film thickness remains, so that both the source / drain electrode material layer and the semiconductor layer material below it remain to form the data line 102, the source / drain electrodes 102a / 102b, the protrusion 120, and the like.

 The portions corresponding to the circular slits 310a to 310e will remain after the development of the photosensitive film having a predetermined thickness, and the portions corresponding to the light blocking portions 305 will be formed in a pattern in which the photosensitive film is removed. When the source / drain electrode material layer 112 and the semiconductor layer material layer 107 are etched using the photosensitive film pattern exposed and developed in such a shape, the source / drain electrode material layer and the semiconductor may be formed at portions corresponding to the light blocking portions. All of the layer material will be removed, and an n + layer (not shown) of the source / drain electrode material layer and the semiconductor layer material is selectively removed at a portion corresponding to the transflective portion, thereby providing a semiconductor region between the channel portions (the source / drain electrodes). The exposed portion of the layer) and the compensation pattern 130 will be formed, and the data line 102, the source / drain electrodes 102a / 102b and the protrusion 120 will remain in the portion corresponding to the transmission part.

The circular slits 310a to 310e are all formed with the same width, so that the portions of the circular slits will be irradiated with the same exposure amount.

However, in the actual patterning of the source / drain electrode material layer 112 and the semiconductor layer 107 using the mask 300, the shape of the channel portion in the thin film transistor TFT, that is, the channel portion Since whether the semiconductor layer is exposed or not is important, focusing on the formation of such a channel, the formation of the compensation pattern 130 is difficult to maintain uniformity, and the size of the horizontal cross section varies considerably from region to region, In addition, the height difference between the formed compensation patterns will be large.

In this case, as shown in FIG. 8B, even if the upper surface has a flat surface, one compensation pattern 130 may have a tolerance during processing for each region, and the deviation of the value may be large. At this time, when the cell gap is formed, the compensation pattern 130 in which the second column spacer 220 is formed is compared with the point where the first column spacer (gap column spacer) 210 and the protrusion 120 are in contact with each other. The higher the separation height H and the larger the separation height, the greater the probability that plastic deformation of the first column spacer 210 occurs. In the pressing test, until the second column spacer 220 contacts the compensation pattern 130, only the first column spacer 210 comes into contact with the protrusion 120 so that pressure is concentrated. This is because, if the first column spacer 210 causes plastic deformation before the second column spacer 220 contacts the compensation pattern 130, it is difficult to recover to the original state. In this case, pressing stains (paint stains) generated by the first column spacers 210 being collapsed or pressed by the protrusions 120 at the site of the first column spacers 210 may be observed.

As shown in FIG. 8B, the compensation pattern 130 is formed to have a flat top surface by circular slits 310a to 310e of the same width of the mask 300. In this case, the shape of the horizontal cross section of the compensation pattern 130 may have a circular shape corresponding to the circular slit 103a.

Hereinafter, when the interval between the second column spacer (anti-press column spacer) formed to prevent the pressing and the upper surface of the passivation layer on the compensation pattern is H, the interval may vary for each region according to the process deviation. In view of this, the shape of the mask used to minimize the influence of the gap between the region-specific compensation pattern and the second column spacer and a manufacturing method of the liquid crystal display using the same will be described.

9A is a cross-sectional view of a mask for forming a compensation pattern of the liquid crystal display of the present invention, and FIG. 9B is a cross-sectional view showing a compensation pattern of the liquid crystal display of the present invention formed using the mask of FIG. 9A. 10 is a plan view of a mask for forming a compensation pattern of the liquid crystal display of the present invention.

9A and 10, the mask 400 exposing the photoresist patterning the compensation pattern 140 to form a compensation pattern (140 of FIG. 9B) formed in the liquid crystal display of the present invention is centered from an edge. As a result, the interval between the slits 410a to 410e is made to have a structure including a circular slit gradually smaller.

When the photosensitive film (not shown) is exposed and developed using the mask 400, for example, when the photosensitive film for etching the source / drain metal layer and the semiconductor layer has positive photosensitive property, the portion of the circular slit having a small width is small. The portion corresponding to the portion where the exposure amount is small and the portion corresponding to the edge where the circular slit is large will have a large exposure amount. In this way, the plurality of circular slits are referred to as a gradient slit, focusing on the fact that the slit becomes gradually smaller or gradually larger from the center to the edge.

In the area corresponding to the gradual slit, the edge and the center part will have a slight difference in the exposure dose, and accordingly, a compensation pattern formed by etching the source / drain metal layer and the semiconductor layer using the photosensitive film ( As shown in FIG. 9B, the shape of the center 140 may have a convex shape with respect to the edge.

Although not shown, the remaining portion of the mask 400, that is, the portion corresponding to the protrusion or the data line and the portion between the circular slits 410a to 410e, the light blocking portion 403 will be defined, except these The site will be defined as permeate 405.

When the photoresist formed on the source / drain metal layer has negative photosensitive property (see FIG. 12B), the slits corresponding to the compensation pattern will be reversed. That is, the slit gap of the portion corresponding to the center portion is large, and the slit gap will gradually decrease from the center to the outside. This is in consideration of the characteristic that the exposed portion of the photosensitive film made of the negative photosensitive material remains. In this case, the transmissive portion may be defined in the remaining region except for the compensation pattern, that is, the corresponding region of the mask corresponding to the data line or the protrusion forming portion. For the channel region, the slits are uniformly arranged to be defined as transflective portions, and light shielding portions may be defined in the remaining regions except for these (data lines, protrusions, channels, and compensation patterns).

In the gradient slit in such a mask, the circular slits 410e to 410a are formed by gradually increasing 0.2 µm from 1 µm in width to 2 µm in width. In this case, the width of the light blocking portion 403 is maintained between the circular slits 410a to 410e, and the width of the light blocking portion 403 is set to a value between 1 and 2 μm.

The compensation pattern 140 formed by using the gradient slit may be formed in various shapes such as a polygonal shape including a circular cross section and a square, and the area corresponding to the column spacer is gradually reduced in the pressing test. In view of increasing contact area, it is observed that it is advantageous to form a circle.

In the pressing test, as shown in FIG. 9B, when the compensation pattern 140 is formed in a shape in which the central portion is convex and gradually descends to the edge, the first column is maintained in the initial cell gap maintenance state during the pressing test. Only the spacer 210 and the protrusion 120 are in contact with each other. As the applied pressure increases, the second column spacer 220 contacts the highest point of the compensation pattern 140, and then gradually increases the contact area and makes contact. . Accordingly, the contact area of the column spacers 210 and 220 by the protrusion 120 and the compensation pattern 140 does not suddenly increase at a specific time point, but has an effect of gradually increasing as the pressure is applied. Therefore, in the pressing test, the pressure of the portion received by the first column spacer 210 corresponding to the protrusion 120 is dispersed to the portion of the second column spacer 220 in contact with the rest, and the dispersion of the pressure It is not made suddenly but is made smoothly so that the plastic strain burden of the column spacer is reduced.

In addition, even if the distance H between the compensation pattern and the second column spacer in forming the cell gap is changed due to a region-specific tolerance generated in the process for forming a compensation pattern, protrusions, data lines, etc. By providing a compensation pattern of a shape in which the contact area gradually increases from the highest point of the compensation pattern 140 for each area, the degree of separation (H) for each area between the compensation pattern 140 and the second column spacer 220 due to the tolerance is reduced. As a result, the uniformity of the degree of separation between the second column spacer 220 and the compensation pattern 140 may be improved.

The first column spacer 210 and the second column spacer 220 may be formed to correspond to non-display areas such as the gate line 101 or the common line 104a, and the protrusions 120 and the compensation corresponding to the respective column spacers 210 may be formed. The pattern 140 is also formed on the gate line 101 or the common line 104a.

In this case, the protrusion 120 and the compensation pattern 140 may include the semiconductor layer material layer 107 and the source / drain electrode material layer 112 formed on the gate line 101 via the gate insulating layer 105. As defined by etching selectively, the protrusion 120 is formed in a shape in which the semiconductor layer pattern 120a and the source / drain metal layer 120b are sequentially stacked from the bottom. In addition, the compensation pattern 140 may be formed as a single layer of the semiconductor layer pattern (the same layer as 107 of FIG. 12C) by giving a gentle step from the center to the edge, or the same as the source / drain metal layer 112. Layer) may be formed by leaving a fine thickness on the semiconductor layer pattern 107 and giving a step between the center portion and the edge portion.

FIG. 11 is a cross-sectional view of column spacers of the liquid crystal display according to the present invention and projections and compensation patterns corresponding thereto on the lines II ′ and II ′ II ′ of FIG. 5.

FIG. 11 is a liquid crystal display of the present invention as shown in FIGS. 9A and 10.

As illustrated in FIG. 11, the protrusion 120 and the compensation pattern 130 are formed on the gate line 101 or the common line 104a. Here, the compensation pattern 130 has a peak at a relatively lower height than the protrusion 120 at its central portion, and is formed in a shape that gradually decreases toward the edge. That is, the compensation pattern 130 has a smooth rounded top surface.

In addition, the protrusion 120 is a laminate having a lower portion of the semiconductor layer pattern 120a having the same layer as the semiconductor layer, and a source / drain electrode layer 102b having the same layer as the source / drain electrodes 102a / 102b. The compensation pattern 140 may be formed as a single layer of the semiconductor layer pattern 120a, or may be etched by giving a step for each region of the source / drain electrodes 102a / 102b to etch the source / drain on the semiconductor layer pattern. The electrode may be formed in a shape in which some thickness is formed.

The protrusions 120 and the compensation patterns 140 are formed on the gate line 101 or the common line 104a through the gate insulating layer 105, and the protrusions 120 and the compensation patterns 140. The protective film 106 is further interposed thereon.

In addition, the protrusion 120 corresponds to the center of the first column spacer 210 and the compensation pattern 140 corresponds to the center of the second column spacer 220.

The size of the horizontal cross section of the protrusion 120 and the compensation pattern 140 is larger than that of the protrusion 120, and the compensation pattern 140 is formed to be larger than the protrusion 120. The cross section is formed to have a smaller area than the horizontal cross section (compensation surface corresponding surface) of the second column spacer 220.

The horizontal cross-sectional shape of the first and second column spacers 210 and 220 is a polygonal shape including a circle or a quadrangle.

Hereinafter, a process of forming the thin film transistor region, the protrusion region, and the compensation pattern will be described with reference to the drawings.

12A to 12E are cross-sectional views illustrating a process of forming thin film transistors, protrusions, and compensation patterns on cross sections taken along lines II through II 'and III through III' of FIG. 5 (where, the plane is shown in FIG. See 5).

As shown in FIG. 12A, a metal material is entirely deposited on the first substrate 100 and selectively removed to form a gate line 101 in one direction, spaced apart from the gate line 101 by a predetermined distance. The common line 104a and the common electrode 104 branched one or more from the common line 104a in a parallel direction are formed. Here, a predetermined portion of the gate line 101 protrudes a predetermined portion and is formed as the gate electrode 101a.

Subsequently, a gate insulating layer 105 is formed on the entire surface of the first substrate 100 including the gate electrode 101a, the gate line 101, the common line 104a, and the common electrode 104.

Subsequently, the semiconductor layer 107 and the metal layer 112 are sequentially deposited on the entire surface of the first substrate 100 including the gate insulating layer 105. Although not shown, the semiconductor layer 107 is formed in a shape in which an amorphous silicon layer is stacked below and an impurity layer is stacked above.

As shown in FIG. 12B, the mask 400 including the light blocking portion 415, the first transflective portion 430 of the channel corresponding portion, the second transflective portion 410 of the compensation pattern corresponding portion, and the transmissive portion 420 are defined. Prepare. In this case, the corresponding portions of the transmissive portion 420 (only the source / drain electrode formation corresponding portions shown in the drawing) are the data line forming portion, the source / drain electrode forming portion, and the protrusion forming portion.

In addition, after the negative photosensitive film 113 is completely coated on the metal layer 112, the mask 400 is aligned on the first substrate 100 coated with the photosensitive film 113.

Here, a portion corresponding to the light blocking portion 415 of the mask 400 corresponds to a portion where both the metal layer 112 and the semiconductor layer 107 are to be removed after patterning, and the transmission portion 420 is the metal layer. Both the 112 and the semiconductor layer 107 correspond to a portion where remaining, the portion corresponding to the first transflective portion 430 corresponds to a portion where only the semiconductor layer 107 remains, and the second half The portion corresponding to the transmission portion 410 is formed corresponding to the portion where the compensation pattern 140 is formed.

As shown in FIG. 12C, the photoresist layer 113 is first exposed and developed using the mask 400 to form a first photoresist layer pattern 113a.

After such exposure and development, the first photoresist layer pattern 130a remains at portions corresponding to the transmission part 420, the first transflective part 430, and the second transflective part 410. At this time, the portion corresponding to the first semi-transmissive portion 430 is further removed relatively flat, and the portion corresponding to the second semi-transmissive portion 410 is removed from the transmissive portion 420. Compared to the transmission portion 430, the edge is removed lower and is formed to have a step. In this case, all of the portions corresponding to the transmission part 420 remain as the coating thickness of the photosensitive film.

Subsequently, the metal layer 112 is patterned through an etchant or an etching gas capable of selectively etching the metal layer using the first photoresist pattern 113a to form the metal layer pattern 112a (see FIG. 12C). Form).

Next, as shown in FIG. 12D, the semiconductor layer 107 is etched using an etching solution or an etching gas capable of selectively etching the semiconductor layer 107 using the first photoresist layer pattern 113a to form a thin film transistor. The semiconductor layer pattern 107b constituting the semiconductor layer 107a of the TFT and the lower layer of the protrusion 120 and a compensation pattern 140 having a highest point from the center portion thereof and gradually lowering toward the edge are formed.

Subsequently, the second photoresist layer pattern 113b is formed through a process such as ashing to completely remove a portion having a low level of the first photoresist layer pattern 113a. When the photoresist material remains on the upper side of the compensation pattern 140, the edge of the compensation pattern 140 may be more etched than the center portion in a process such as ashing.

Subsequently, a source / drain metal layer serving as an upper layer of the source / drain electrodes 102a and 102b and the protrusion 120 using an etchant or an etching gas capable of selectively etching the metal layer using the second photoresist pattern 113b. 120b is formed.

Subsequently, when the semiconductor layer 107 of FIG. 12A has an amorphous silicon layer / n + layer (impurity layer) stacked in order from the bottom, the source / drain electrodes 102a / 102b are formed, and then the source / Using the drain metal layers 102a / 102b as a mask, an etching gas or an etching solution for selectively removing the impurity layer is then applied to remove the impurity layer in the channel region.

In the process of patterning the semiconductor layer material layer 107 and the source / drain electrode material layer 112 described with reference to FIGS. 12C and 12D, the data lines 102 are patterned together in a direction perpendicular to the gate line 101. In this case, the source electrode 102a is formed to protrude from the data line 102, and a drain electrode 102b spaced apart from the source electrode 102a by a predetermined interval is formed.

Next, the second photoresist layer pattern 113b is removed.

As shown in FIG. 12E, the passivation layer 106 is formed on the entire surface of the first substrate 100 including the semiconductor layer 107a and the source / drain electrodes 102a and 102b, the compensation pattern 140, and the protrusion 120. .

Here, the shape of the transmissive part and the light blocking part of the mask 400 is determined according to whether the photosensitive property of the photosensitive film is negative or positive, and as shown, the photosensitive film 113 is negative photosensitive. In this case, the photosensitive film has positive photosensitivity, and thus the same patterning effect may be obtained by reversing the shapes of the transmissive part and the light blocking part.

Next, although not shown, a contact hole 106a is formed by selectively removing the passivation layer 106 corresponding to the upper portion of the drain electrode 102b.

Subsequently, the transparent electrode material including the contact hole 106a is entirely deposited on the passivation layer 106 and selectively removed to form the pixel electrode 103 in an alternating shape with the common electrode 104. .

Subsequently, a black matrix layer (not shown) is formed on the second substrate 200 to correspond to an area except the pixel area, and a color filter layer (not shown) is formed on the area including the pixel area. An overcoat layer (not shown) is formed on the entire surface including the black matrix layer (not shown) and the color filter layer (not shown).

Subsequently, a liquid crystal (not shown) is dropped on the first substrate 100 or the second substrate 200, the substrate 100 or 200 on which the liquid crystal is not dropped is inverted, and the first and second substrates are then inverted. (100, 200) is bonded.

The embodiments described above have been described with respect to the in-plane switching (IPS) mode, and may be applicable to the twisted nematic (TN) mode. In the case of the twisted nematic mode, the pixel electrodes are formed in one pattern on the pixel area of the first substrate, and the common electric field is formed on the front surface of the second substrate. Is formed. In the twisted nematic mode, since the common line is not formed inside the pixel region, the first and second column spacers and the protrusions are all formed on the gate line.

The liquid crystal display of the present invention as described above and a method of manufacturing the same have the following effects.

First, when the cell gap is formed, the projections correspond to the first column spacers having a larger area of the corresponding surface than the upper surface of the projections, so that the contact area between the entire column spacer and the opposing substrate (the first substrate) is considerably increased even when touched. Since it is small and the frictional force is small, it is easy to restore | restore to the original state after sliding by touch.

Second, when forming the data line and the projection, etc., the compensation pattern is formed at a lower height than the projection, so that when the projection for bonding the cell gap is made in contact with the first column spacer and after applying a constant pressure in the pressing test, The two column spacers are brought into contact with the contact area gradually increasing from the highest point of the compensation pattern. Therefore, even if the separation height H between the highest point of the compensation pattern and the second column spacer differs from area to area, the change in contact area is not large for each area, and since the change in the pressure depends on the pressing pressure. The pressure is not concentrated at the site, and the dispersion effect is obtained. Therefore, the patterns such as column spacers are not collapsed by the pressing, and coating stains (pressed stains) and the like are prevented.

Third, the projections and the first column spacers correspond to each other in a high temperature environment, so that the liquid crystal expands as much as a predetermined thickness of the first column spacers is maintained, so that the first column spacers are in contact with the projections. The degree of liquid crystal flowing down to the lower end near the ground can be prevented. Thereby, gravity failure can be alleviated.

Claims (24)

A first substrate and a second substrate facing each other; A protrusion formed at a first height on a predetermined portion on the first substrate; A first column spacer formed corresponding to the protrusions and having a corresponding surface corresponding to the protrusions having a larger counter surface than the protrusions and formed on the second substrate; A compensation pattern formed corresponding to a predetermined portion where the protrusion is not formed, the compensation pattern having a peak at a second height lower than the first height at a central portion thereof and gradually lowering relative to the second height toward the edge; A second column spacer formed corresponding to the compensation pattern; And And a liquid crystal layer formed between the first and second substrates. The method of claim 1, And a gate line and a data line defining a pixel area on the first substrate. 3. The method of claim 2, And the protrusion and the compensation pattern are formed on the gate line. 3. The method of claim 2, And a common line formed on the first substrate in the same direction as the gate line on the same layer as the gate line. 5. The method of claim 4, And the protrusion and the compensation pattern are formed on the gate line or the common line. 3. The method of claim 2, And a thin film transistor further formed at an intersection of the gate line and the data line. The method according to claim 6, The thin film transistor is A gate electrode protruding from the gate line; A source electrode protruding from the data line; A drain electrode spaced apart from the source electrode at a predetermined interval; And And a semiconductor layer formed over the gate electrode and under the source / drain electrode, the semiconductor layer being in contact with the source electrode and the drain electrode to form a channel between the source electrode and the drain electrode. 8. The method of claim 7, And the protrusion is formed by sequentially stacking a semiconductor layer pattern of the same layer as the semiconductor layer and a source / drain metal layer of the same layer as the source / drain electrode. 8. The method of claim 7, The compensation pattern is a liquid crystal display device comprising a semiconductor layer pattern of the same layer as the semiconductor layer. 8. The method of claim 7, The compensation pattern may include a semiconductor layer pattern having the same layer as the semiconductor layer and a source / drain metal pattern partially etched with the same layer as the source / drain metal layer. A first substrate and a second substrate facing each other; A gate line and a data line intersecting each other on the first substrate to define a pixel area; A common line formed parallel to the gate line; A common electrode and a pixel electrode which are alternately formed in the pixel region; A thin film transistor formed at an intersection of the gate line and the data line; A protrusion formed at a predetermined portion of the gate line; A first column spacer formed corresponding to the protrusions and having a corresponding surface corresponding to the protrusions having a larger corresponding surface than the protrusions on the second substrate; A compensation pattern formed corresponding to a predetermined portion of the gate line of the portion where the protrusion is not formed, the compensation pattern having a peak at a lower height than the protrusion at a central portion thereof and gradually lowering from the peak toward the edge; A second column spacer formed corresponding to the compensation pattern; And And a liquid crystal layer formed between the first and second substrates. 12. The method of claim 11, The thin film transistor is A gate electrode protruding from the gate line; A source electrode protruding from the data line; A drain electrode spaced apart from the source electrode at a predetermined interval; And And a semiconductor layer formed over the gate electrode and under the source / drain electrode, the semiconductor layer being in contact with the source electrode and the drain electrode to form a channel between the source electrode and the drain electrode. 13. The method of claim 12, And the protrusion is formed by sequentially stacking a semiconductor layer pattern of the same layer as the semiconductor layer and a source / drain metal layer of the same layer as the source / drain electrode. 13. The method of claim 12, The compensation pattern is a liquid crystal display device comprising a semiconductor layer pattern of the same layer as the semiconductor layer. 13. The method of claim 12, The compensation pattern may include a semiconductor layer pattern having the same layer as the semiconductor layer and a source / drain metal pattern partially etched with the same layer as the source / drain metal layer. Preparing a first substrate and a second substrate; Forming a gate line on the first substrate; Sequentially depositing a gate insulating film, a semiconductor layer material layer, and a source / drain metal material layer on the first substrate including the gate line; Applying a photoresist film on the source / drain metal material layer to a first thickness; By selectively patterning the photoresist layer, a first photoresist pattern having a first thickness remaining corresponding to a predetermined portion of the gate line, and a lower peak at a central portion thereof than the first thickness and gradually decreasing toward an edge Forming a second photoresist pattern; By selectively etching the source / drain metal material layer and the semiconductor layer material layer by using the first photoresist pattern and the second photoresist pattern as masks, protrusions are formed on a portion corresponding to the first photoresist pattern, and the second Forming compensation patterns on portions corresponding to the photoresist pattern; Forming a first column spacer on the second substrate at the portion corresponding to the protrusion and forming a second column spacer on the second substrate at the portion corresponding to the compensation pattern; Dropping liquid crystal onto any one of the first substrate and the second substrate; And And inverting and bonding the remaining substrates on which the liquid crystal is not dropped among the first and second substrates. 17. The method of claim 16, The first photoresist pattern and the second photoresist pattern are formed using a diffraction exposure mask. The method of claim 17, A portion corresponding to the first photoresist pattern of the diffraction exposure mask may be formed as a light shielding portion, and a portion corresponding to the second photoresist pattern may be formed in a plurality of circular slits that are formed at the center and gradually increase in slit width. Method for manufacturing a liquid crystal display device, characterized in that formed by a semi-transmissive portion included. 19. The method of claim 18, And the photosensitive film is made of a positive photosensitive material. The method of claim 17, A portion corresponding to the first photoresist pattern of the diffraction exposure mask is formed as a transmissive portion, and a portion corresponding to the second photoresist pattern includes a plurality of circular slits that are formed at the edge of the center and gradually decrease in slit width. The manufacturing method of the liquid crystal display device characterized by the above-mentioned. The method of claim 20, And the photosensitive film is made of a negative photosensitive material. 17. The method of claim 16, In the step of selectively patterning the photoresist layer, at the same time as forming the first and second photoresist pattern, protruding from the third photoresist pattern and the third photoresist pattern in which the first thickness remains in the direction crossing the gate line. And forming a fourth photoresist pattern and a fifth photoresist pattern spaced apart from the fourth photoresist pattern by a predetermined interval, and the sixth photoresist pattern which is flat to a second thickness lower than the first thickness between the fourth and fifth photoresist patterns. Method of manufacturing a liquid crystal display device further comprising the step of forming a. 23. The method of claim 22, By selectively etching the source / drain metal material layer and the semiconductor layer material layer by using the third to sixth photoresist pattern as a mask, A data line is formed at a portion corresponding to the third photoresist pattern, a source / drain electrode is formed corresponding to the fourth photoresist pattern and the fifth photoresist pattern, and the source / drain electrode corresponds to the sixth photoresist pattern. A method of manufacturing a liquid crystal display device further comprising the step of defining a channel region therebetween. Preparing a first substrate and a second substrate; Forming a gate line and a common line parallel to and spaced apart from the first substrate; Sequentially depositing a gate insulating film, a semiconductor layer material layer, and a source / drain metal material layer on the first substrate including the gate line and the common line; Applying a photoresist film on the source / drain metal material layer to a first thickness; By selectively patterning the photoresist layer, a first photoresist pattern having a first thickness remaining corresponding to a predetermined portion of the gate line or the common line, and having a highest peak at the center portion thereof, which is lower than the first thickness, goes toward the edge Forming a second photoresist pattern that is gradually lowered; By selectively etching the source / drain metal material layer and the semiconductor layer material layer by using the first photoresist pattern and the second photoresist pattern as masks, protrusions are formed on a portion corresponding to the first photoresist pattern, and the second Forming compensation patterns on portions corresponding to the photoresist pattern; Forming a first column spacer on the second substrate at the portion corresponding to the protrusion and forming a second column spacer on the second substrate at the portion corresponding to the compensation pattern; Dropping liquid crystal onto any one of the first substrate and the second substrate; And And inverting and bonding the remaining substrates on which the liquid crystal is not dropped among the first and second substrates.

Images