KR101158773B1 - Patch type nerval element using nano-wire - Google Patents

Abstract

The present invention relates to a patch-type neural device using nanowires, the patch-type neural device can be attached to the nanowire tip on a flexible substrate to detect or stimulate a nerve signal on a large area of the nervous system such as the cerebral cortex As an example, a plurality of processing modules are electrically connected to each other to provide a neural device capable of transmitting and receiving an electrical signal or an electrical stimulus to each other even when a nerve is broken.

Description

Patch type nerval element using nano-wire}

The present invention relates to a patch type neural device using a nano wire that attaches a nanowire tip on a flexible substrate to detect or stimulate neural signals on a large area of neural organs such as the cerebral cortex. In particular, the present invention relates to a neural device capable of transmitting and receiving an electrical signal or an electrical stimulus with each other even when there is an area where nerves are disconnected by a plurality of processing modules electrically connected to each other.

Muscles of the human body generally operate in response to electrical stimulation provided by nerves. Therefore, when abnormalities occur in facial muscles or the like, it may be necessary to treat the nerves connected to the muscles.

Conventionally, when an abnormality occurs in the facial nerve or the laryngeal nerve, therapeutic actions such as drugs and surgery have been performed. In this case, a local massage or the like was performed for the patients, in order to prevent the degeneration of the muscles by stimulating the damaged muscles by stimulating the peripheral nerves while the damaged nerves are restored.

In other words, if the stimulation is blocked by muscles, such as surgery for facial nerves or laryngeal nerve palsy patients, because the muscles are damaged and permanent muscle damage or paralysis may occur, The method of massaging muscles or providing electrical stimulation from outside has been proposed.

Meanwhile, in the related art, an element inserted into a human body to provide a physical stimulus or obtaining information about a specific value in the human body has been proposed. Hereinafter, an apparatus including an electrode for providing an electrical stimulation to a nerve or detecting the electrical stimulation will be described. .

First, a device for detecting an electrical signal of a nerve has been proposed based on a metal-oxide-semiconductor field effect transistor (MOSFET). The conventional technology is a technology for monitoring changes in membrane capacitance of nerves according to external stimuli using gating of MOSFET devices, and simultaneously monitoring a plurality of neural responses. Such a conventional technique has been applied to a method of detecting nerve signals by fixing a position of neurons of a snail and cultivating by limiting mobility of a pillar-shaped pillar made of polyimide around a P-MOSFET (Zeck et. al., Noninvasive neuroelectric interfacing with synaptically connected snail neurons immobilized on a semiconductor chip, Proc Nat Acad Sci 2001; 98). FIG. 1 is a diagram showing intercellular signals and extracellular signals detected according to this first conventional technique.

Secondly, a technique for detecting electrical stimulation of brainstem or neuron fiber has been proposed. Normann Group and Cyberkinetics of the University of Utah in the United States have been working on measuring electrical signals and stimulating nerves by inserting multi-electrodes directly into the nerves and brain since 2000 (Normann et. Al., Long-Term Stimulation and Recording With a Penetrating Microelectrode Array in Cat Sciatic Nerve, IEEE Transactions on Biomedical Engineering, VOL. 51, NO. 1, JANUARY 2004). Figure 2 shows a second electrode according to the prior art and the electrode is inserted into the sciatic nerve of the cat.

Third, a technique of inserting a sieve-shaped electrode into a neuron fiber has been proposed. Through joint research by Fraunhofer-IBMT, IMTEK, etc. in Germany, research is conducted on nerve regeneration by inserting a sieve-shaped electrode into a neuron fiber and applying electrical stimulation. (Anup et. Al., Design, in vitro and in vivo assessment of a multi-channel sieve electrode with integrated multiplexer, J. Neural Eng. 3 (2006) 114-24). 3 is a sieve-shaped electrode based on the third prior art described above. The diameter of the entire sieve is 1.5 mm, the same as that of the rat sciatic nerve, and 571 holes having a diameter of 40 μm are arranged at intervals of 70 μm. In addition, a ring-shaped electrode surrounds 27 holes and has an area of 2200 μm ² .

In the above-described prior art of FIG. 1, the noise of the MOSFET device is high, so that only the tendency of the electrical signal can be confirmed. In the prior art of FIG. 2, the brain stem or nerve cell dies when the electrode is inserted. When inserting three sieve-shaped electrodes, there is a problem in that cross-talk occurs between the electrodes, so that electrical signals cannot be detected accurately.

The present invention has been proposed to solve the problems of the prior art, an object of the present invention is to provide an electrical stimulation continuously to the nervous system without killing the nerve fibers and to obtain an electrical signal nerves that can solve the problem of muscle damage It is to provide an element.

Another object of the present invention is to provide a neural device capable of transmitting and receiving an electrical signal or an electrical stimulus with each other even if there are disconnected parts by electrically connecting a plurality of processing modules to each other.

Still another object of the present invention is to provide a patch-type neural device using nanowires by attaching nanowire tips on a flexible substrate to detect or stimulate neural signals on a large area of neural organs such as the cerebral cortex.

Still another object of the present invention is to provide a neural device that does not interfere with the insertion of the nanowires by setting the direction of the nanowire forming direction and the direction of the processing module differently.

The present invention, in order to achieve the above object, one end is fixed to the substrate extending in the vertical direction, inserted into the nerve to obtain an electrical signal from the nerve fibers, or at least one nanowire for applying an electrical signal to the nerve fibers A plurality of nanowire modules comprising; And a processing module electrically connected to the plurality of nanowire modules, the processing module capable of mutually transmitting and receiving an electrical signal or electrical stimulation between any of the selected nanowire modules.

In the present invention, the processing module may process an electrical signal obtained from any nanowire module selected from the plurality of nanowire modules and apply it as an electrical stimulus to any other nanowire module.

In the present invention, the substrate is preferably a patch-type flexible substrate so that it can be attached to a large area of the nerve organ. Flexible substrates are particularly advantageous when attached to neural organs including curved surfaces. As the flexible substrate, polyimide (PI, polyimide), polydimethylsiloxane (PDMS, polydimethylsiloxane), polyethylene (PE, polyethylene) polyethylene terephthalate (PET, polyethylene terephthalate), and expanded polytetrafluoroethylene may be used. Polyimides are preferred because of their ease of manufacture for implementing circuits and the like.

In the present invention, a plurality of nanowires are collected to form a plurality of nanowire modules, and the plurality of nanowire modules may be arranged in a lattice form. The arrangement of the nanowire module is not limited to the lattice arrangement, but the process of preparing the seed layer for the nanowire growth, the circuit implementation, the mask fabrication, and the actual process may be considered as advantages of the lattice arrangement.

In the present invention, a perforation may be formed in the substrate, and the perforation provides another additional function, for example, a passage through which damaged nerves may grow, in which case the electrical stimulation and nerve signals may be detected while the nerve is growing. The inner face of the perforation can be used. Perforations can be formed in a variety of forms, for example, can be arranged in the form of a lattice like nanowire modules.

In the present invention, the nanowires may be made of one or two or more alloys selected from silicon, gold, silver, iridium, iridium oxide, platinum, tin, nickel, chromium, rhenium, and copper.

In addition, the present invention is a plurality of nanowires including at least one nanowire is fixed to one end of the substrate extending in the vertical direction, inserted into the nerve to obtain an electrical signal from the nerve fibers, or apply an electrical signal to the nerve fibers Wire module; And a processing module electrically connected to the plurality of nanowire modules and capable of mutually transmitting and receiving an electrical signal or an electrical stimulus between any of the nanowire modules selected from the plurality of nanowire modules. And a processing module formed on a second surface different from the first surface of the substrate.

In the present invention, the angle formed by the normal vector of the second surface and the normal vector of the first surface is 170 degrees to 180 degrees, and the nanowire module and the processing module may be connected through a through via hole connection. .

In the present invention, the through via hole may be located in a region different from the complementary metal oxide semiconductor (CMOS) region of the substrate.

In the neural device of the present invention, a plurality of processing modules are electrically connected to each other, so that even if there is an area where nerves are disconnected, the neural device may transmit and receive an electrical signal or an electrical stimulus.

In addition, conventional neural signal measuring equipment can be necrotic neural cells because the tip size is large, the nerve element of the present invention can be stimulated and detected without damaging the nerve cells because the size of the tip nano-level.

In addition, in the past, there was a burden to cut the nerve bundle, but the nerve element of the present invention can be used in the form of simply covering the surface in the form of a patch does not damage the nerve organs.

In addition, since the neural element of the present invention does not have a structure such as a cuff, it can be used for organs such as the brain in which nerve cells are distributed in a large area.

In addition, since the neural device of the present invention can be used without any damage on the body even in the body organs that are difficult to measure and detect by the conventional method, it is possible to open a new market and replace the existing market.

In addition, the neural device of the present invention may be set so that the direction of forming the nanowires and the direction of the processing module are different so that the nanowires are not disturbed to be inserted into the nerves.

1 is a diagram showing intracellular signals and extracellular signals detected according to the first prior art.
Figure 2 shows a second electrode according to the prior art and the electrode is inserted into the sciatic nerve of the cat.
3 is a sieve shaped electrode based on a third prior art.
4 is a perspective view of a patch-type neural device having a lattice-shaped nanowire module according to a first embodiment of the present invention.
5 is a perspective view of a neural device in which perforations are formed in a substrate for another function according to the second embodiment of the present invention.
6 is a perspective view of a neural device with nanowire placement for intramuscular insertion in accordance with a third embodiment of the present invention.
7 is a perspective view of a neural device in which a processing module is coupled to a lower surface of a substrate according to the present invention.
8-10 is a figure explaining an example of the method of manufacturing the neural element of this invention.
11 is a schematic diagram illustrating a matrix of processing modules in accordance with the present invention.
12 is a schematic diagram showing an example in which a processing module transmits and receives at a site where nerves are disconnected according to the present invention.
Fig. 13 is a diagram showing a neural device according to a fourth embodiment of the present invention.
14 is a diagram showing a nerve device according to the fifth embodiment of the present invention.
Fig. 15 is a diagram showing a nerve device according to the sixth embodiment of the present invention.
Fig. 16 is a diagram showing a nerve device according to the seventh embodiment of the present invention.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

The neural device according to the present invention comprises a nano-sized material. Nano-sized materials can be used in a variety of sensors because their small size increases the surface area / volume ratio, which predominates the electrochemical reactions occurring on the surface.

In particular, one-dimensional nanomaterials, such as nanotubes, nanowires, and nanorods, have a large aspect ratio and are easily manipulated, and thus have been implemented as nano devices first.

The present invention proposes a neural device based on nanowires to obtain electrical signals from nerves.

4 is a perspective view of a patch-type neural device having a lattice-shaped nanowire module according to a first embodiment of the present invention, wherein the neural device according to this embodiment includes a substrate 10 having a large area and the substrate 10. It is composed of a plurality of nanowire module 20 formed in.

The substrate 10 is in the form of a patch attached to the organ surface of the organism, it is preferable that the substrate is a flexible substrate so that it can be attached to a large area of the nerve organ.

In the present invention, ductility means soft and soft and soft properties. Thus, applying a constant external force can cause the flexible substrate to bend or deform easily. The flexible substrate is particularly suitable as the substrate 10 of the neural device according to the present invention, because it is advantageous when attached to neural organs including curved surfaces.

As the flexible substrate, PI, PDMS, PE, PET, Gore-Tex, etc. may be used, and polyimide is particularly preferable because of the manufacturability for implementing a circuit.

Nanowire module 20 is composed of a plurality of nanowires 21, as shown in a partial enlarged view of FIG. That is, a plurality of nanowires 21 gather to form the nanowire module 20.

As shown in FIG. 4, the nano wire module 20 may be disposed in a lattice form, but is not limited thereto. In the case of gap arrangements, the seed layer preparation for nanowire growth, the process for circuit implementation, the mask fabrication, and the ease of the actual process may be considered as advantages.

In the present invention, the lattice refers to a structure or an object or a form woven in a substantially right angle at regular intervals such as a checkerboard.

As shown in a partially enlarged view of FIG. 4, one end of the nanowire 21 is fixed to one surface of the substrate 10 and extends in the vertical direction.

In the present invention, the vertical refers to a straight line and a straight line, a straight line and a plane, and an angle formed by the plane and the plane is approximately right angles, and may be viewed at approximately right angles in the range of 80 to 100 degrees. Even when losing, it can be seen as a straight line.

Nanowire 21 according to the present invention is characterized by obtaining an electrical signal from the nerve fibers, or providing electrical stimulation to the nerve fibers. Anatomically, nerves are elongated structures that can be seen with the naked eye, and histologically, many nerve bundles are collected. On the other hand, the nerve bundle is a collection of a number of nerve fibers (nerve fibers). Nerve fiber refers to the axon portion of nerve cells, and is called a nerve fiber because the axon is a thin and long shape like a fiber. Nerve fibers are called by various names, such as axons or axons.

Each of the nerve fibers is wrapped by a soft connective tissue, the endoneurium, and the nerve bundle is wrapped by a perineurium, and the bundle of nerves is wrapped by an epineurium. These membranes are all there to protect the nerves, and only the outer nerve membranes are identified with the naked eye.

Nanowire 21 according to the present invention is inserted into the nerve fiber to obtain an electrical signal, or provide an electrical stimulation. That is, the nanowires 21 according to the present invention are inserted into nerve fibers in the nerve bundles to obtain electrical signals generated along the surface of nerve cells in the nerve fibers, or provide electrical stimulation to nerve cells in the nerve fibers.

Conventionally, electrodes prepared in a macro unit size were arranged and inserted into nerve fibers. In this case, the nerve fibers to which the electrodes are inserted are damaged and the nerve fibers die. However, in the case of the present invention, since the nanowires 21 are used for obtaining an electrical signal and / or providing electrical stimulation, damage to nerve fibers can be minimized.

In general, the diameter of the nerve fiber is more than a few micrometers, whereas the nanowire 21 is only a few tens to hundreds of nanometers (nm) in diameter and is inserted into any portion of the nerve fiber to electrical stimulation to nerve cells in the nerve fiber. By providing or acquiring an electrical signal, even when the nanowire 21 is inserted, it does not significantly damage the nerve fiber.

The direction in which the nanowires 21 are inserted into the nerve fibers is not limited. For example, the nanowires 21 may be inserted in the longitudinal direction or the vertical direction of the nerve fibers. When the nanowires 21 are inserted in the longitudinal direction, there is an advantage that the contact area between the nanowires 21 and the outer portion of the nerve fibers is easily maximized. Preferably, the longitudinal direction of the nanowires and the longitudinal direction of the nerve fibers are parallel.

The nanowires 21 may acquire electrical signals from the nerve fibers contained in the nerves and at the same time apply electrical stimuli to the nerve fibers. Alternatively, the nanowires 21 may be configured to perform only one function of the acquisition of the electrical signals or the application of the electrical stimuli. Can be.

Some of the plurality of nanowires 21 may apply electrical stimulation to nerve fibers, and others may acquire electrical signals from the nerve fibers. For example, the neural device may include only a plurality of nanowires for obtaining an electrical signal from the nerve fiber, or may include only a plurality of nanowires for applying electrical stimulation to the nerve fibers.

In addition, the neural device includes a plurality of nanowires for obtaining an electrical signal from nerve fibers, a plurality of nanowires for applying electrical stimulation to the nerve fibers, and nanowires for obtaining an electrical signal from the nerve fibers or applying electrical stimulation to the nerve fibers. It may include all.

FIG. 5 is a perspective view of a neural device in which perforations are formed in a substrate for another function according to the second embodiment of the present invention. Unlike the neural device of FIG. 4, the neural device according to this embodiment may be provided with a plurality of perforations 30. It includes the substrate 10 having.

Perforation 30 provides another additional function, for example, a passage through which damaged nerves can grow, in which case the inner surface of the perforation can be used as a location for electrical stimulation and nerve signal detection during the growth of the nerve. .

As shown in FIG. 5, the perforation 30 may be disposed in a lattice form, but is not limited thereto and may be disposed in various forms. However, the perforation 30 is preferably disposed between the nanowire module 20 avoiding the arrangement of the nanowire module 20 so as not to overlap or too close to the arrangement of the nanowire module 20.

FIG. 6 is a perspective view of a neural device having a nanowire arrangement for intramuscular insertion according to a third embodiment of the present invention, wherein the neural device according to this embodiment is arranged in a lattice form like the neural device of FIG. Consists of the nano wire module 20 and the perforation 30, but unlike the neural device of FIG. 5, the nano wire module 20 is more closely disposed to completely surround the perforation 30.

In the case of the structure of FIG. 6, compared to the structure of FIG. 5, the density of the nanowires can be increased to expand the neurostimulation to a larger portion, and as the size of the detected signal increases, the signal-to-noise ratio can be increased. have.

7 is a perspective view of a neural device in which a processing module is coupled to a lower surface of a substrate according to the present invention.

The processing module 40 serves to control neural signals or electrical stimuli transmitted and received through the nanowires 21.

The processing module 40 is electrically connected to each of the nanowire modules 20, and the plurality of processing modules 40 are electrically connected to each other, so that even if there is an area where nerves are disconnected, an electrical signal or an electrical stimulus may be transmitted and received to each other. .

The processing module 40 may comprise a CMOS, or CMOS may be coupled to the processing module 40.

The neural device of the present invention can be manufactured by various methods, hereinafter, a growth method of the nanowires 21 and a method of manufacturing the neural device having the nanowires 21 will be described.

8-10 is a figure explaining an example of the method of manufacturing the neural element of this invention.

8 is a conceptual diagram illustrating a method of synthesizing nanowires using a catalyst. As shown, when reactants are added to the nanoclusters, nucleation and growth occurs to synthesize the nanowires. The synthesized nanowires may have a shape as shown in FIG. 9. In addition, the nanowires used in the present invention may be formed by a method described in the prior art (Si Nanowire Bridge in Trenaces: "Integration of Growth into Device Fabrication" Adv. Mater. 17, 2098, 2005). According to the above description, Nao wire having various three-dimensional structures as shown in FIG. 10 can be manufactured.

An example of a method of fabricating a neural device including perforations and nanowires is as follows.

The substrate 10 including the perforation 30 may be implemented by applying a photo mask and an etching process on a wafer of various materials such as silicon.

When the substrate 10 including the perforations 30 is formed, the catalyst is applied to the position of the substrate 10 where the nanowires 21 will be grown. The catalyst may be located in any portion of the substrate 10 via a lithography process or the like. The catalyst is preferably selected according to the material of the nanowires 21 to be grown. For example, when growing the silicon nanowires, Au catalysts may be used. After the catalyst is applied onto the substrate 10 and supplied with a reactant through a CVD process or the like, crystal nucleation and growth may be performed as described above to form the nanowires 21.

The nanowires 21 may be made of various materials. For example, it may be made of one of silicon, gold, silver, iridium, iridium oxide, platinum, tin, nickel, chromium, rhenium (rhenium) and copper, or an alloy of various combinations of two or more thereof. In addition, any semiconductor device or metal that can be implemented as a nano device by a nano process can be used.

11 is a schematic diagram showing a matrix of a processing module according to the present invention, the substrate 10 is provided with a plurality of processing modules 40, for example, a ₁₁ to line up to a _1m and a ₁₁ to heat up to a _n1 Is fulfilling.

12 is a schematic diagram showing an example in which a processing module transmits and receives at a site where a nerve is disconnected according to the present invention, even if there is a site 51 at the nerve 50, for example, a signal of a _{22 in} the processing module 40 is shown. The signal can be continuously processed by sending the signal to a ₁₄ beyond the cut portion 51 of the nerve 50.

FIG. 13 is a view showing another neural device according to a fourth embodiment of the present invention, wherein the neural device according to this embodiment is connected to a substrate 710, nanowires 721 and 722, electrodes 731 and 732, and through-via hole connections. 741 and 742, electrode pads 751 and 752, and touch balls 761 and 762.

Electrodes 731 and 732 of each of nanowires 721 and 722 are connected to electrode pads 751 and 752 on opposite sides of the substrate through through via hole connections 741 and 742. That is, the electrode 731 of the nanowire 721 is connected to the electrode pad 751 through the through via hole connection 741, and the electrode 732 of the nanowire 722 is connected to the electrode through the through via hole connection 742. It is connected to the pad 752.

The electrode pad 751 outputs an electrical signal obtained from the nerve fiber through the nanowire 721 or applies a signal for electrical stimulation to the nanowire 721. The electrode pad 752 outputs an electrical signal obtained from the nerve fiber through the nanowire 722 or applies a signal for electrical stimulation to the nanowire 722.

The electrode pad 751 is connected to the processing module 770 through the touch ball 761, and the electrode pad 752 is connected to the processing module 770 through the touch ball 762.

As such, the nanowire and electrode pads located on the opposite side of the substrate are electrically connected to the processing module using a through via hole connection technique. Since the surface on the substrate where the nanowires are installed and the surface on the substrate where the electrode pads and the processing module are installed are opposite to each other, the angle formed by each normal vector is about 180 degrees.

Although not shown in FIG. 13, the substrate may be provided with a CMOS region. The CMOS area is the area on the substrate used to implement CMOS. The through via hole connections 741 and 742 are preferably disposed away from the CMOS region.

In addition, although not shown in FIG. 13, a base for positioning nanowires may be provided in each of the electrodes 731 and 732.

The base may be provided with at least one through hole. The through hole may have various cross sections, such as a circle, an ellipse, a polygon, and the like, and may have a shape corresponding to a cross section of a neural bundle or a circular shape which is easy to manufacture. In this case, the through hole may have a diameter of several tens of micrometers to several tens of nanometers.

In particular, the through hole provided in the base may be connected to the through via hole provided in the substrate. In this case, the nerve fibers may be restored through the through holes or via holes.

In addition, the base may be provided with a nano wire support for supporting the nano wire. In this case, the nanowire support may be provided on the inner circumferential surface of the through hole. The nanowire supporter supports the nanowires to be fixed in one direction. That is, the nanowires are fixed by the nanowire supports.

The nanowire support may be formed to divide the through hole into a plurality of regions. The nanowire support may have a straight shape or may be formed in a curve having various curvatures. In addition, the nanowire support may be formed to extend from the inner circumferential surface of the through hole, or may extend from one surface of the base.

FIG. 14 is a view showing a neural device according to a fifth embodiment of the present invention, similar to FIG. 13, but highlighting that a nanowire probe is connected to a gate or a drain of a CMOS.

Referring to FIG. 14, the neural device according to this embodiment includes nanowires 811 and 812, electrodes 821 and 822, through-via connections 851 and 852, CMOS 881 and 882, and electrode pads 830. And a touch ball 840.

In the example illustrated in FIG. 14, only one electrode pad 830 and one touch ball 840 are illustrated, but two or more electrode pads and touch balls may be provided according to the number of nanowires 811 and 812.

The electrodes 821 and 822 of each of the nanowires 811 and 812 are connected to the opposite side of the substrate through the through via hole connections 851 and 852. In this case, each of the nanowires 811 and 812 is connected to a drain or a gate of each of the CMOS 881 and 882.

The electrode pad 830 outputs an electrical signal obtained from nerve fibers through the nanowires 811 and 812, or applies a signal for electrical stimulation to the nanowires 811 and 812.

The electrode pad 830 is connected to the processing module 870 through the touch ball 840.

As such, the nanowire and electrode pads located on the opposite side of the substrate are electrically connected to the processing module using a through via hole connection technique. Since the surface on the substrate where the nanowires are installed and the surface on the substrate where the electrode pads and the processing module are installed are opposite to each other, the angle formed by each normal vector is about 180 degrees.

FIG. 15 is a diagram illustrating a neural device according to a sixth embodiment of the present invention, wherein the nanowire probe device according to this embodiment includes a nanowire 910, an electrode 920, an electrode pad 930, and a touch ball 940. ).

The touch ball 940 is electrically connected to a processing module connected to the device. The nanowires 910 are formed on the base formed on the opposite side of the touch ball 940, and provide an electrical signal measured from nerve fibers to the device through the touch ball 940, or provide the touch ball 940 from the device. Electrical stimulation is applied to the nerve fibers based on the signal applied through.

The nano wire 910 is connected to the touch ball 940 through the electrode 920 and the electrode pad 930.

The embodiment shown in FIG. 15 corresponds to a case where only the nanowire probe device contacting the substrate through the touch ball 940 is separated. That is, the embodiment shown in FIG. 15 is a method of connecting a nanowire probe terminal made using a through via hole connection to a device with a touch ball independently of the device. According to the present invention, a probe device in which a nanowire and a contact pad are connected to a substrate using a through-via hole connection (when included in a device), or a nanowire and a contact pad connected to a touch ball are disposed on opposite surfaces. It covers both the case where it is in electrical contact with the substrate (when configured independently of the device).

FIG. 16 is a diagram illustrating a neural device according to a seventh embodiment of the present invention, and illustrates another example of connection through a through via hole connection of an electrode and a pad located on opposite surfaces of the substrate.

Referring to FIG. 16, the electrodes 1121 and 1122 on which the nanowires 1111 and 1112 are generated are connected to the electrode pads 1141 and 1142 through the through via hole connections 1130, respectively. That is, the electrode 1121 is connected to the electrode pad 1141, and the electrode 1122 is connected to the electrode pad 1142.

The touch ball 1151 is formed on the electrode pad 1141, and the touch ball 1152 is formed on the electrode pad 1142.

In the example shown in FIG. 16, the connection between the electrodes 1121 and 1122 and the electrode pads 1141 and 1142 is made by a portion of the through via hole connection 1130, and the remaining portion of the through via hole connection 1130 is left as it is. Will be placed. That is, the through via hole connection 1130 does not need to be filled with all metal, and only a part of the spaces allows electrodes on both sides of the substrate to be connected through the metal, and the remaining part may be left as a space. At this time, the outer surface of the remaining hole portion may be coated. In addition, nerve fibers or nerve tissues may grow through the holes.

Furthermore, the through hole provided in the base may be connected to the through via hole provided in the substrate. In this case, the nerve fiber may be restored through the through hole or the through via hole, and the more space is provided in the through via hole connection, the more effectively the nerve fiber or the nerve tissue may be used for restoration.

The neural device of the present invention is characterized in that a plurality of processing modules are electrically connected to each other, so that an electric signal or an electrical stimulus can be transmitted and received to each other even if there is an area where the nerve is broken.

The neural device of the present invention is nano-sized in tip size, and can be used in a form of simply covering the surface of the neural organs in a patch form, so that stimulation and detection can be performed without damaging nerve cells, and the burden of cutting nerve bundles as before There is no

In particular, since the neural device of the present invention is not a cuff-like structure, it can be used without any damage to body organs, such as the brain where nerve cells are distributed in a large area, which are difficult to measure and detect by conventional methods. Can be.

In addition, the neural device of the present invention may be set so that the direction of formation of the nanowires and the direction of the processing module are different so that the nanowires are not disturbed to be inserted into the nerves.

It is apparent to those skilled in the art that the present invention can be embodied in other specific forms without departing from the spirit and essential features of the present invention. Accordingly, the above detailed description should not be construed as limiting in all aspects, but should be considered as illustrative. The scope of the present invention should be determined by reasonable interpretation of the appended claims, and all changes within the equivalent scope of the present invention are included in the scope of the present invention.

10, 710: substrate
20: nano wire module
21, 721, 722, 811, 812, 910, 1111, 1112: nanowires
30: perforated
40, 770, 870, 970: Processing Module
50: nerves
51: broken nerve
731, 732, 821, 822, 920, 1121, 1122: electrode
741, 742, 851, 852, 1130: Through via hole connection
751, 752, 830, 930, 1141, 1142: electrode pad
761, 762, 840, 940, 1151, 1152: touch ball
881, 882: CMOS

Claims (16)

A plurality of nanowire modules including at least one nanowire fixed to one end of the substrate and extending in a vertical direction and inserted into a nerve to obtain an electrical signal from the nerve fiber or to apply an electrical signal to the nerve fiber; And
And a processing module electrically connected to the plurality of nanowire modules, the processing module capable of mutually transmitting and receiving electrical signals or electrical stimuli between any of the selected nanowire modules.
The method of claim 1,
The processing module may process an electrical signal obtained from any of the nanowire modules selected from the plurality of nanowire modules and apply the electrical signal to any other nanowire module as an electrical stimulus.
The method of claim 1,
The substrate is a neural device, characterized in that the flexible substrate in the form of a patch.
The method of claim 1,
Neural device, characterized in that the nano-wire module is disposed in the form of a lattice.
The method of claim 1,
Perforations are formed in the substrate, characterized in that the nerve element.
The method of claim 5,
Perforations are nerve elements, characterized in that arranged in the form of a grid.
The method of claim 1,
Nanowire is a nerve device, characterized in that made of one or two or more alloys selected from silicon, gold, silver, iridium, iridium oxide, platinum, tin, nickel, chromium, rhenium, copper.
A plurality of nanowire modules including at least one nanowire fixed to one end of the substrate and extending in a vertical direction and inserted into a nerve to obtain an electrical signal from the nerve fiber or to apply an electrical signal to the nerve fiber; And
A processing module electrically connected to the plurality of nanowire modules, the processing module capable of mutually transmitting and receiving an electrical signal or an electrical stimulus between any of the nanowire modules selected from the plurality of nanowire modules;
And the nanowire module is formed on a base located on a first side of the substrate, and the processing module is formed on a second side different from the first side of the substrate.
The method of claim 8,
The angle between the normal vector of the second surface and the normal vector of the first surface is 170 degrees to 180 degrees, and the nanowire module and the processing module are connected through a through via hole connection. Nerve element.
10. The method of claim 9,
And the through via hole is located in a region different from the CMOS region of the substrate.
The method of claim 8,
The processing module may process an electrical signal obtained from any of the nanowire modules selected from the plurality of nanowire modules and apply the electrical signal to any other nanowire module as an electrical stimulus.
The method of claim 8,
The substrate is a neural device, characterized in that the flexible substrate in the form of a patch.
The method of claim 8,
Neural device, characterized in that the nano-wire module is disposed in the form of a lattice.
The method of claim 8,
Perforations are formed in the substrate, characterized in that the nerve element.
The method of claim 14,
Perforations are nerve elements, characterized in that arranged in the form of a grid.
The method of claim 8,
Nanowire is a nerve device, characterized in that made of one or two or more alloys selected from silicon, gold, silver, iridium, iridium oxide, platinum, tin, nickel, chromium, rhenium, copper.

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