KR101145001B1 - Method of fabricating oxide nano-structure using sol-gel process and porous nano template - Google Patents

Abstract

The present invention relates to a method for producing an oxide nanostructure using a sol-gel process and a porous nanostructure, comprising preparing a substrate having a porous nanostructure and performing surface treatment, and injecting an oxide compound sol into the porous nanostructure. And drying and heating the oxidized compound sol through an annealing process to form an oxide compound gel to form an oxide nanostructure inside the porous nanostructure, and separating the porous nanostructure and the oxide nanostructure. By including, mass production is possible, by controlling the size of the porous nanostructures can easily control the size of the oxide nanostructures, there is an effect that can easily change the type and composition of the solution to be injected.

Sol-gel process, porous framework, porous nano structure, oxide nano structure, surface treatment

Description

METHODS OF FABRICATING OXIDE NANO-STRUCTURE USING SOL-GEL PROCESS AND POROUS NANO TEMPLATE}

The present invention relates to a method for producing an oxide nanostructure using a sol-gel process and a porous nanostructure, and more particularly, based on a sol-gel process of an oxide material and using the same in a porous nanostructure. By obtaining the oxide nanostructure by injection, it is possible to produce a multi-metal oxide more effectively than the conventional manufacturing method, using a sol-gel process and a porous nanostructure to obtain the desired size and composition of the material, and even the phase of the material It relates to a method for producing an oxide nanostructure.

In general, nano-structures of various materials are manufactured through mechanisms such as VLS (Vapor-Liquid-Solid), VS (Vapor-Solid), SLS (Solution-Liquid-Solid), and the like.

In order to fabricate the nanostructures using the VLS mechanism, a metal catalyst is required, and as the metal catalyst, metals (eg, Au, Ni, Fe, etc.) capable of lowering the melting point of the material are used. In this VLS mechanism, the position and size of the nanostructure can be controlled by the position and size of the catalyst and a nanostructure having high crystallinity can be synthesized.

For example, as a representative prior art for obtaining Si nanostructures using the VLS mechanism, prior art 1 {Lincoln J. Lauhon et al. As suggested in "Epitaxial core-shell and core-multishell nanowire heterostructures" Nature 420, 57, (2002)}, first, gaseous reactants combine with gold on the surface of the gold nanocloud as a catalyst to form nuclei. After the structures begin to be produced, Si nanostructures with multiple shells are fabricated.

At this time, gold serves as a catalyst for the growth of Si nanostructures, and gold plays a role of significantly lowering the melting point of Si such that liquid phase alloying can be achieved like Si. This can be seen from the phase equilibrium of Si and Fe. In other words, the use of a catalyst leaves a metal catalyst at the end of the nanostructure. This is how Si nanostructures are formed using the VLS mechanism.

Such a VLS mechanism is a representative method for obtaining not only Si but also one-dimensional nanostructures such as Ge, ZnO, ZnSe, GaAs, GaP, GaN, InP, CdS, CdSe, etc. (prior document 2; Younan Xia et al. See "One Dimensional Nanostructures: Synthesis, Characaterization, and Application" Advanced Materials 15, 353, (2003)}.

On the other hand, a liquid precursor (Liquid Precursor) is required in order to fabricate the nanostructure by the SLS mechanism. This SLS mechanism also requires a catalyst such as gold, which allows the yield of nanostructures to be increased, or to control the diameter and location. In other words, the nanostructures fabricated through the SLS mechanism have a lower growth temperature than the nanostructures fabricated by the VLS mechanism, resulting in poor crystallinity.

For example, as a representative prior art for obtaining a Si nanostructure by the SLS mechanism, the prior art document 3 {Xianmao Lu et al. As suggested in "Growth of Single Crystal Silicon Nanowires in Supercritical Sliution from Tethered Gold Particles on a Silicon Substrate" Nano letters 3, 93, (2003)}, Au nanoparticles were used as metal catalysts. (C ₆ H ₅ ) ₂ SiH ₂ and hexane were used as a solvent. Si nanostructures are synthesized in such a way that (C ₆ H ₅ ) ₂ SiH ₂ is decomposed into Si atoms and Si and Au form liquid phase alloys to precipitate Si. Metal catalysts can determine the diameter of the nanostructures and control their position.

Meanwhile, in the prior art, when describing a zinc oxide nanostructure using a sol-gel process and precipitation rather than a metal catalyst and a vapor, first, zinc nitrate salt and ammonium carbide are respectively DI. After dissolving in water, the zinc nitride solution is slowly dropped into the ammonium carbide solution and then precipitated by stirring. The precipitate is filtered and rinsed in DI water to remove the residue. Then put it back in DI water and stir for 5 minutes. The suspension is transferred to a Teflon-lined 100 mL capacity autoclave and subjected to hydrothermal synthesis from about 130 ° C to 200 ° C. After this process, the mixture is washed with alcohol and dried at about 90 ° C for 12 hours to obtain zinc oxide nanostructures.

On the other hand, in the prior art, a method for manufacturing an aligned zinc oxide nanostructure using Anodic Aluminum Oxide (AAO) will be described. First, an AAO porous nanostructure is manufactured, and then impurities and barrier layers are formed. Remove with HgCl ₂ solution and phosphoric acid. Gold is then deposited onto AAO using a sputtering process. Growth of the nanostructures takes place in a tube furnace. AAO porous nanostructures are covered with zinc. After that, the heat treatment is performed in the temperature range of about 800 ℃ to 900 ℃ and argon atmosphere, the zinc is completely evaporated. Finally, stopping the heat treatment and argon gas injection and injecting oxygen completes the zinc oxide nanostructures.

However, the above-described conventional techniques are based on expensive vacuum equipment and catalysts and manufacture nanostructures using a deposition method, thereby making the manufacturing process complicated and increasing costs.

The present invention has been made to solve the above-mentioned problems, an object of the present invention is based on the sol-gel process of the oxide material and by using it to inject into the porous nanostructures to obtain the oxide nanostructures In addition, the present invention provides a method for producing an oxide nanostructure using a sol-gel process and a porous nanostructure, which can produce a multi-element metal oxide more effectively than conventional manufacturing methods, and obtain a desired size, composition, and phase of a material. It is.

In order to achieve the above object, an aspect of the present invention, (a) preparing a surface having a porous nanostructure and surface treatment; (b) injecting an oxide compound sol into the porous nanostructure; (c) drying and heating the oxidized compound sol to a oxidized compound gel through a heat treatment process to form an oxide nanostructure inside the porous nanostructure; And (d) to provide a sol-gel process comprising the step of separating the porous nanostructure and the oxide nanostructures and a method for producing the oxide nanostructures using the porous nanostructures.

Here, the substrate having the porous nanostructures may include anodized alumina (Anodic Aluminum Oxide, AAO) or acrylamide (AAM) material.

Preferably, in step (b), the injection of the oxide compound sol may be performed using spin coating or dip coating.

Preferably, in the step (b), the injection of the oxide compound sol may be injected in a temperature range of 80 ℃ to 100 ℃ and a vacuum atmosphere of 10 ^-1 to 10 ^-7 torr range.

Preferably, in the step (b), the oxide compound sol is at least two or more from the group consisting of zinc compounds, indium compounds, gallium compounds, tin compounds, hafnium compounds, zirconium compounds, magnesium compounds, yttrium compounds and thallium compounds And forming a dispersion system by mixing a dispersion medium corresponding to the dispersion with a selected dispersion, and stirring and aging the dispersion system, respectively, wherein the zinc compound versus the indium compound and the gallium compound are formed. And the molar ratio of the tin compound and thallium compound is 1 to 0.1 to 1 to 2.

Preferably, the dispersion medium is isopropanol (isopropanol), 2-methoxyethanol (2-methoxyethanol), dimethylformamide (dimethylformamide), ethanol (ethanol), deionized water (methanol), acetylacetone ( At least one selected from the group consisting of acetylacetone, dimethylamine borane and acetonitrile may be selected according to the dispersoid.

Preferably, the zinc compound, zinc citrate dihydrate, zinc acetate, zinc acetate dihydrate, zinc acetylacetonate hydrate, zinc acetylacetonate hydrate, zinc acrylate (Zinc acrylate), Zinc chloride, Zinc diethyldithiocarbamate, Zinc dimethyldithiocarbamate, Zinc fluoride, Zinc fluoride hydrate Zinc fluoride hydrate, Zinc hexafluoroacetylacetonate dihydrate, Zinc methacrylate, Zinc nitrate hexahydrate, Zinc nitrate hydrate, Zinc triflumethanesulfonate (Zinc trifluo romethanesulfonate, zinc undecylenate, zinc trifluoroacetate hydrate, zinc tetrafluoroborate hydrate, or zinc perchlorate hexahydrate can do.

Preferably, the indium compound, Indium chloride, Indium chloride tetrahydrate, Indium fluoride, Indium fluoride trihydrate, Indium hydroxide hydroxide), indium nitrate hydrate, indium acetate hydrate, indium acetylacetonate, or indium acetate.

Preferably, the gallium compound may include at least one of gallium acetylacetonate, gallium chloride, gallium fluoride, or gallium nitrate hydrate. have.

Preferably, the tin compound may include tin acetate, tin chloride, tin chloride dihydrate, tin chloride pentahydrate, or tin fluoride. It may include at least one of.

Preferably, the thallium compound is thallium acetate, thallium acetylacetonate, thallium chloride, thallium chloride tetrahydrate, thallium cyclopentadienide , Thallium fluoride, thallium formate, thallium hexafluorofluoroacetonate, thallium nitrate, thallium nitrate trihydrate, thallium It may include at least one of trifluoroacetate (Thallium trifluoroacetate) or thallium perchlorate hydrate (Thallium perchlorate hydrate).

Preferably, the molar concentration of the zinc compound, indium compound, gallium compound, tin compound or thallium compound is 0.1M to 10M, respectively.

Preferably, the sol stabilizer may be mixed in the same molar ratio as the zinc compound in the dispersion system.

Preferably, the sol stabilizer may include one or more from the group consisting of mono-ethanolamine, di-ethanolamine and tri-ethanolamine.

Preferably, an acid or a base may be added to the dispersion system to adjust the pH of the dispersion system.

Preferably, the pH is lowered by adding acetic acid (CH ₃ COOH), which is an acid, to the dispersion, or by adding ammonium hydroxide (NH ₃ OH), potassium hydroxide (KOH), or sodium hydroxide (NaOH), which is a base, to the dispersion. It can raise so that the pH range of the said dispersion system may be 1-10.

Preferably, the pH range of the dispersion system is 3.8 to 4.2.

Preferably, in step (c), the temperature range of the heat treatment process is 300 ℃ to 1000 ℃.

Preferably, in step (d), the separation of the porous nanostructures and the oxide nanostructures is performed by etching the porous nanostructures using a sodium hydroxide (NaOH) aqueous solution, and then obtaining the oxide nanostructures by centrifugation. You can do that.

Preferably, in step (d), the shape of the oxide nanostructure is determined by the shape of the porous nanostructure, and has a cylindrical shape in the dot (Dot), the size of several nano to several micro It may include.

According to the sol-gel process of the present invention and the method for producing an oxide nanostructure using the porous nanostructure as described above, based on the sol-gel process of the oxide material and using the same By obtaining the oxide nanostructure by injection, it is possible to produce a multi-metal oxide more effectively than the conventional manufacturing method, it is possible to obtain the desired size and composition of the material, and even the phase of the material has a very efficient advantage.

In addition, according to the present invention, since it can be easily injected into the porous nanostructure using a sol-gel process, unlike the conventional method of manufacturing a nanostructure using the deposition method, mass production is possible, and an oxide solution, that is, a liquid phase By controlling the size of the porous nanostructures to be injected with the oxide compound sol, the size of the oxide nanostructures can be easily controlled, and the type and composition of the injected solution can be easily changed. In addition, there is an advantage that can control the phase of the material in the sintering process.

In addition, according to the present invention, by using a well-aligned porous anodized alumina (Anodic Aluminum Oxide, AAO) and In-Ga-ZnO (IGZO) solution to obtain the oxide nanostructures in an ordered form to obtain a large amount of fast time Unlike conventional vacuum equipment and using high heat, gas, powder, and catalyst are not required, which is advantageous in terms of price.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the following embodiments of the present invention may be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. The embodiments of the present invention are provided to enable those skilled in the art to more fully understand the present invention. In addition, in describing the present invention, when it is determined that a detailed description of a related known component or function of the component may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted.

First, the present invention is to fabricate a nano-structure (Multi-Component Metal-Oxide Semiconductor Nano Structure) of binary or more metal oxide materials by a sol-gel process and a porous template.

In the present invention, a process of manufacturing a sol, a process of manufacturing a porous framework, a surface treatment of the porous framework, and an oxide material solution (Solution) in the surface-treated porous framework, that is, liquid sol (sol) ) Is injected. Thereafter, the oxide nanostructure may be manufactured by removing the sintering process and the porous mold.

Here, the composition of the nanostructure is determined by the sol composition, the size of the oxide nanostructures can be freely adjusted according to the shape and size of the porous frame. In addition, the shape of the oxide nanostructure is determined by the surface treatment of the porous mold. The phase of the nanostructure is determined by the sintering temperature. According to the present invention, it is possible to produce a binary or more oxide nanostructure by a simple method, it is possible to easily adjust the size, shape, phase.

That is, a feature of the present invention is to inject a solution of an oxide material based on a sol-gel process into the porous nanostructure based on the porous nanostructure, based on the existing vacuum equipment and catalyst. It can be said that it is different from manufacturing a nanostructure using a deposition method.

1 to 4 are conceptual views illustrating a method of manufacturing an oxide nanostructure using a sol-gel process and a porous nanostructure according to an embodiment of the present invention.

Referring to FIG. 1, first, a substrate 100 having a porous template, that is, a porous nanostructure P is prepared to perform surface treatment using a physical or chemical method. Herein, the substrate 100 having the porous nanostructure P may include, for example, an anodized aluminum oxide (AAO) or acrylamide (AAM) material.

Chemical methods of the surface treatment include, for example, forming a viscosity of a plana solution, a chemical solution such as DI water, acetone, toluene, and OTS-SAMs (octadecyltetrachlorosilane-self-assembled-monolayers) and a polymetallic metal oxide solution. There is a method of injecting by using, and as a physical method, there is a method using sterling or ultra sonic of the chemical solution.

For example, before injecting a metal oxide solution, that is, a liquid oxide sol 200 (see FIG. 2), into a porous nanostructure P including the prepared anodized alumina (AAO), Surface treatment is performed for good injection. In this case, when the surface treatment is not performed, the oxide compound sol 200 may not be injected into a desired form into the anodic alumina (AAO) porous nanostructure (P). It is preferable to surface-treat the anodized alumina (AAO) porous nanostructure (P) using an appropriate reaction, time and chemical reaction.

Referring to FIG. 2, an oxide compound sol 200 is injected into the surface-treated porous nanostructure P. For example, an In—Ga—ZnO (IGZO) solution, which is an oxide compound sol 200, may be injected into the surface-treated anodized alumina (AAO) porous nanostructure. In this case, it is preferable to use a dip coating method when injecting the IGZO solution, but the present invention is not limited thereto, and a conventional spin coating method may be used.

If the IGZO solution is injected by spin coating after the surface treatment, it is caused by the process RPM and is deposited only on the surface of the anodic alumina (AAO) porous nanostructure by the action of centrifugal force and is not injected into the porous nanostructure. . The same tendency occurs for the low spin coating process RPM.

However, when the RPM is very low, it is less affected by the centrifugal force, so the IGZO solution is injected better than the previous process. However, the method proposed in the present invention is to inject the IGZO solution by dip coating the surface-treated anodized alumina (AAO) porous nanostructures in a container having a sufficient IGZO solution.

In addition, when the surface treatment of the anodic oxidation alumina (AAO) porous nanostructures and the dip coating process on the IGZO solution, it is very important to make a temperature and a vacuum of about 100 ℃. Preferably, the injection of the oxide compound sol 200 may be performed in a vacuum range of about 80 ° C to 100 ° C and about 10 ⁻¹ to 10 ⁻⁷ torr.

At this time, the composition of the temperature of about 100 ℃ is the reason for increasing the viscosity to the temperature before the destruction of the properties of the IGZO solution, and the vacuum at atmospheric pressure is the inside of the anodized alumina (AAO) porous nanostructure By removing the air, the viscous IGZO solution is injected without holes. In other words, it is injected using the capillary effect. The oxide nanostructures implanted in this way have a uniform size and composition.

On the other hand, the oxide compound sol 200 is, for example, at least two or more selected from the group consisting of zinc compounds, indium compounds, gallium compounds, tin compounds, hafnium compounds, zirconium compounds, magnesium compounds, yttrium compounds and thallium compounds. And forming a dispersion system by mixing a dispersion medium corresponding to each of the dispersants, and stirring and aging the dispersion system, respectively, wherein the zinc compound versus the indium compound, gallium compound, tin compound, and thallium are formed. Each molar ratio of the compound is preferably 1 to 0.1 to 1 to 2.

Here, the dispersion medium is, for example, isopropanol, 2-methoxyethanol, dimethylformamide, ethanol, deionized water, methanol, acetylacetone (acetylacetone), dimethylamineborane (dimethylamineborane), acetonitrile (acetonitrile) in the group consisting of one or more may be selected corresponding to the dispersoid.

In addition, the zinc compound is, for example, zinc citrate dihydrate, zinc acetate, zinc acetate dihydrate, zinc acetylacetonate hydrate, zinc acetylacetonate hydrate, zinc acrylate (Zinc acrylate), Zinc chloride, Zinc diethyldithiocarbamate, Zinc dimethyldithiocarbamate, Zinc fluoride, Zinc fluoride hydrate, zinc hexafluoroacetylacetonate dihydrate, zinc methacrylate, zinc nitrate hexahydrate, zinc nitrate hydrate, zinc triple Lumethanesulfonate (Zinc trifluo romethanesulfonate, zinc undecylenate, zinc trifluoroacetate hydrate, zinc tetrafluoroborate hydrate, or zinc perchlorate hexahydrate can do.

In addition, the indium compound may be, for example, indium chloride, indium chloride tetrahydrate, indium fluoride, indium fluoride trihydrate, or indium hydroxide. hydroxide), indium nitrate hydrate, indium acetate hydrate, indium acetylacetonate, or indium acetate.

In addition, the gallium compound may include, for example, at least one of gallium acetylacetonate, gallium chloride, gallium fluoride, or gallium nitrate hydrate. have.

In addition, the tin compound may be, for example, tin acetate, tin chloride, tin chloride dihydrate, tin chloride pentahydrate, or tin fluoride. It may include at least one of.

In addition, the thallium compound may be, for example, thallium acetate, thallium acetylacetonate, thallium chloride, thallium chloride tetrahydrate, thallium cyclopentadienide, thallium cyclopentadienide , Thallium fluoride, thallium formate, thallium hexafluorofluoroacetonate, thallium nitrate, thallium nitrate trihydrate, thallium It may include at least one of trifluoroacetate (Thallium trifluoroacetate) or thallium perchlorate hydrate (Thallium perchlorate hydrate).

In addition, the molar concentration of the zinc compound, indium compound, gallium compound, tin compound or thallium compound is preferably about 0.1M to 10M, respectively.

In addition, the sol stabilizer may be mixed in the same molar ratio as the zinc compound in the dispersion system. In this case, the sol stabilizer may include, for example, one or more from the group consisting of mono-ethanolamine, di-ethanolamine, and tri-ethanolamine. .

In addition, an acid or a base may be added to the dispersion system to adjust the pH of the dispersion system. For example, the pH is lowered by adding acetic acid (CH ₃ COOH) as the acid to the dispersion system, or pH is added by adding ammonium hydroxide (NH ₃ OH), potassium hydroxide (KOH) or sodium hydroxide (NaOH) as the base to the dispersion system. By increasing the pH range of the dispersion system may be about 1 to 10. More preferably, the pH range of the dispersion system is about 3.8 to 4.2.

Referring to FIG. 3, the oxide sol 200 is dried and heated through a heat treatment to be converted into an oxide compound gel to form an oxide nanostructure 300 in the porous nanostructure P. Referring to FIG. At this time, the temperature range of the heat treatment step is preferably about 300 ℃ to about 1000 ℃.

For example, an anodized alumina (AAO) porous nanostructure (P) containing an oxide solution, that is, an oxide compound sol 200, is subjected to a sintering process in an oxygen atmosphere using a conventional heat treatment apparatus.

FIG. 5 is a TG-DSC graph of an IGZO solution and a IGZO phase change TEM image at each temperature, and shows a TG-DSC graph and a TEM image of a solution having a composition ratio of indium, gallium, and zinc of 1: 1: 2. .

Referring to FIG. 5, the solvent is decomposed with the solvent at about 150 ° C., the elements are combined at about 200 ° C. to form a mixed oxide, and crystallization of the IGZO material occurs from about 305 ° C. to 420 ° C. The three figures below are images of IGZO solution phase measured by TEM using the process of raising furnace temperature to about 300 ℃, 400 ℃ and 500 ℃ under the same conditions as TG-DSC.

In addition, in the TEM image, it can be seen that the phase of the IGZO solution is amorphous before the crystallization temperature and poly-crystalline after the crystallization temperature. Therefore, it can be seen that it is consistent with the result of TG-DSC. The results of these TG-DSC are not significantly different even if the composition is changed. By passing through this sintering step, an IGZO nanostructure can be obtained.

As described above, the present invention provides an oxide nanostructure by injecting an oxide solution, that is, an oxide compound sol 200, into an anodic alumina (AAO) porous nanostructure. It can be obtained, and the size and shape of the nanostructure can be freely controlled by the process conditions of anodic alumina (AAO). And, as shown in Figure 5, by controlling the sintering temperature of the furnace it is possible to control the phase of the oxide nanostructures produced in the anodized alumina (AAO) porous nanostructures. In addition, the nanostructure of the desired composition can be obtained by changing the composition of the material in preparing the oxide solution.

Referring to FIG. 4, the porous nanostructure P and the oxide nanostructure 300 are separated. At this time, the separation of the porous nanostructures (P) and the oxide nanostructures 300 by etching the porous nanostructures (P) using an etchant (eg, sodium hydroxide (NaOH) aqueous solution), and then using centrifugal separation. To obtain the oxide nanostructure 300.

On the other hand, the shape of the oxide nanostructure 300 is determined by the shape of the porous nanostructure (P), for example, has a cylindrical (Cylinder) shape in the dot (dot), the size of the nanoscale from several microns can do.

Although a preferred embodiment of the sol-gel process and the method for producing an oxide nanostructure using the porous nanostructure according to the present invention has been described above, the present invention is not limited thereto, but the claims and the detailed description and the appended claims are provided. It is possible to carry out various modifications within the scope of one drawing and this also belongs to the present invention.

1 to 4 are conceptual views illustrating a method of manufacturing an oxide nanostructure using a sol-gel process and a porous nanostructure according to an embodiment of the present invention.

5 is a graph showing a TG-DSC graph of an IGZO solution and an IGZO phase change TEM image for each temperature.

Claims (20)

(a) preparing and surface treating a substrate having a porous nanostructure; (b) injecting an oxidized compound sol into the interior of the porous nanostructure in a vacuum atmosphere in a temperature range of 80 ° C. to 100 ° C. and a vacuum range of 10 ⁻¹ to 10 ⁻⁷ torr; (c) drying and heating the oxidized compound sol to a oxidized compound gel through a heat treatment process to form an oxide nanostructure inside the porous nanostructure; And (d) separating the porous nanostructure and the oxide nanostructure, The oxide compound sol is dispersed in a dispersoid consisting of at least one compound selected from the group consisting of zinc compounds, indium compounds, gallium compounds, tin compounds, hafnium compounds, zirconium compounds, magnesium compounds, yttrium compounds, and thallium compounds. Forming a dispersion system by mixing a dispersion medium corresponding to each other, and stirring and aging the dispersion system, respectively, wherein the indium compound, the gallium compound, the tin compound, the hafnium compound, and the zirconium compound with respect to the zinc compound are formed. , The molar ratio of each of the magnesium compound, yttrium compound or thallium compound is 1 to 0.1 to 1, characterized in that the sol-gel process and the method for producing an oxide nanostructure using a porous nanostructure. The method according to claim 1, The substrate having the porous nanostructures is a sol-gel process characterized in that it comprises anodized alumina (Anodic Aluminum Oxide, AAO) or acrylamide (AAM) material and a method for producing an oxide nanostructures using a porous nanostructures. The method according to claim 1, In the step (b), the oxide nanostructure using a sol-gel process and a porous nanostructure, characterized in that the injection by using a spin coating (Dip Coating) or a dip coating method during the injection of the oxide compound sol Manufacturing method. delete delete The method according to claim 1, The dispersion medium is isopropanol (isopropanol), 2-methoxyethanol (2-methoxyethanol), dimethylformamide, ethanol, deionized water, methanol (methanol), acetylacetone, Dimethylamineborane (dimethylamineborane), acetonitrile (acetonitrile) in the group consisting of a sol-gel process and a method for producing an oxide nanostructure using a porous nanostructure, characterized in that at least one selected according to the dispersoid. The method according to claim 1, The zinc compound, zinc citrate dihydrate, zinc acetate, zinc acetate dihydrate, zinc acetate dihydrate, zinc acetylacetonate hydrate, zinc acrylate ), Zinc chloride, zinc diethyldithiocarbamate, zinc dimethyldithiocarbamate, zinc fluoride, zinc fluoride hydrate, Zinc hexafluoroacetylacetonate dihydrate, Zinc methacrylate, Zinc nitrate hexahydrate, Zinc nitrate hydrate, Zinc trifluoromethanesulfo Zate trifluoromethanesulfonate ), Zinc undecylenate, zinc trifluoroacetate hydrate, zinc tetrafluoroborate hydrate, or zinc perchlorate hexahydrate. Method for producing an oxide nanostructure using a sol-gel process and a porous nanostructure, characterized in that. The method according to claim 1, The indium compound, Indium chloride (Indium chloride), Indium chloride tetrahydrate (Indium chloride tetrahydrate), Indium fluoride (Indium fluoride), Indium fluoride trihydrate (Indium fluoride trihydrate), Indium hydroxide, Sol-gel process comprising at least one of indium nitrate hydrate, indium acetate hydrate, indium acetylacetonate, or indium acetate Method for producing an oxide nanostructure using a porous nanostructure. The method according to claim 1, The gallium compound, characterized in that it comprises at least one of gallium acetylacetonate, gallium chloride (Gallium chloride), gallium fluoride (Gallium fluoride), or gallium nitrate hydrate (Gallium nitrate hydrate) Method for producing an oxide nanostructure using a sol-gel process and a porous nanostructure. The method according to claim 1, The tin compound may include at least one of tin acetate, tin chloride, tin chloride dihydrate, tin chloride pentahydrate, or tin fluoride. Method for producing an oxide nanostructure using a sol-gel process and a porous nanostructure, characterized in that it comprises one. The method according to claim 1, The thallium compound, thallium acetate (Thallium acetate), thallium acetylacetonate (Thallium acetylacetonate), thallium chloride (Thallium chloride), thallium chloride tetrahydrate, thallium cyclopentadienide (Thallium cyclopentadienide), thallium flu Thallium fluoride, Thallium formate, Thallium hexa fluoroacetylacetonate, Thallium nitrate, Thallium nitrate trihydrate, Thallium trifluoroacetate (Thallium trifluoroacetate) or thallium perchlorate hydrate (Thallium perchlorate hydrate) characterized in that it comprises at least one of a sol-gel process and a method for producing an oxide nanostructure using a porous nanostructure. delete The method according to claim 1, A method for producing an oxide nanostructure using a sol-gel process and a porous nanostructure, characterized in that the sol stabilizer is mixed in the same molar ratio as the zinc compound in the dispersion system. The method of claim 13, The sol stabilizer, sol- characterized in that it comprises at least one member of the group consisting of mono-ethanolamine, di-ethanolamine and tri-ethanolamine (tri-ethanolamine) Method for producing an oxide nanostructure using a gel process and a porous nanostructure. The method according to claim 1, A method for producing an oxide nanostructure using a sol-gel process and a porous nanostructure, characterized in that an acid or base is added to the dispersion system to adjust the pH of the dispersion system. The method of claim 15, The pH is lowered by adding acetic acid (CH ₃ COOH) as the acid to the dispersion system, or the pH is increased by adding ammonium hydroxide (NH ₃ OH), potassium hydroxide (KOH) or sodium hydroxide (NaOH) as the base to the dispersion system, A method for producing an oxide nanostructure using a sol-gel process and a porous nanostructure, characterized in that the pH range of the dispersion system is 1 to 10. The method of claim 16, PH range of the dispersion system is 3.8 to 4.2, characterized in that the sol-gel process and the method for producing an oxide nanostructure using a porous nanostructure. The method according to claim 1, In the step (c), the temperature range of the heat treatment process is a method of producing an oxide nanostructure using a sol-gel process and a porous nanostructure, characterized in that 300 ℃ to 1000 ℃. The method according to claim 1, In the step (d), the separation of the porous nanostructures and the oxide compound nanostructures by etching the porous nanostructures using an aqueous solution of sodium hydroxide (NaOH), and then to obtain the oxide nanostructures by centrifugation. Method for producing an oxide nanostructure using a sol-gel process and a porous nanostructure, characterized in that. The method according to claim 1, In the step (d), the shape of the oxide nanostructures is determined by the shape of the porous nanostructures, has a cylindrical (Cylinder) shape in the dot (dot), the size of which includes a few nano to several micro Method for producing an oxide nanostructure using a sol-gel process and a porous nanostructures characterized in that.

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