KR101138150B1 - Single Crytstal Ingot Diameter Measuring System and Single Crytstal Ingot Grower including the same - Google Patents

Abstract

Embodiments relate to a diameter measuring system of a single crystal ingot and a single crystal ingot growth apparatus including the same.
Single crystal ingot diameter measuring system according to the embodiment may be provided in the chamber for growing a single crystal ingot diameter measuring sensor for measuring the diameter of the single crystal ingot growing in the chamber.

Description

Single-Crystal Ingot Diameter Measuring System and Single-Crystal Ingot Grower including the same}

Embodiments relate to a diameter measuring system of a single crystal ingot and a single crystal ingot growth apparatus including the same.

In the production of single crystal ingot, an important part of the crystal quality is determined by V / G, and the V value is the pulling speed (mm) that substantially affects the crystal quality during ingot growth (mm). / min), and the G value means the temperature gradient in the vertical direction.

Accordingly, in order to manufacture a wafer having high quality, not only the control of the crystal quality average pulling speed (mm / min) but also the G value must be controlled. In order to control the G value, it is necessary to identify and control the melt gap (mm) of the growth length of the ingot. Meltgap means the distance between the silicon melt top surface and the heat shield.

One of the most important parts for this is the diameter of the ingot. The melt gap fluctuates with the fluctuation of the diameter of the ingot, which causes the fluctuation of the G value, which causes the fluctuation of quality. For example, as the ingot diameter varies by about 1 mm, the melt gap varies by about 2.0 mm.

Ingot diameter measurement according to the prior art is to remove the ingot from the single crystal growth apparatus (Grower) after the growing (Growing) process, the ingot is pushed into the ingot Profiler (Ingot Profiler), jig ( Zig) to measure the diameter of the ingot.

For example, the body of the ingot is placed at the start point of the ingot dia profiler, the ingot profiler is operated, and the ingot profiler's zig is left and right at about 10 mm intervals. Measure the radius of, and add the left and right values to calculate the diameter of the ingot.

However, the diameter measurement system of the ingot according to the prior art has problems in productivity, accuracy, precision, and speed.

For example, in the prior art, the diameter of the ingot is measured after the ingot is moved to a profiler after removal of the ingot, and when a plurality of ingots are removed, the phenomenon of stagnation occurs. There is a problem that the productivity is lowered by taking more time.

In addition, in the conventional technology, since the operator measures the diameter manually and measures at intervals of up to 10 mm, the accuracy and precision are inferior, and an error of about ± 1.0 mm because the left and right are measured using a zig. As a result, there is a problem of low accuracy and precision.

In addition, the prior art has a disadvantage in that the feedback of growth conditions is slow in the subsequent growth process because the diameter is measured by a profiler and reflected in the system after the growth process.

Embodiment is a single crystal ingot diameter measuring system and a single crystal ingot growth apparatus including the same to improve the conventional ingot diameter measuring system to improve the productivity of the ingot growth process in real time by measuring and reflecting the ingot diameter to increase productivity To provide.

In addition, the embodiment increases the accuracy of the diameter measurement of the ingot in order to control the important G value in the crystal quality to increase the quality uniformity and the yield of the defect product, and reflects this in real time to automate the process of the operator It is to provide a single crystal ingot diameter measuring system and a single crystal ingot growth apparatus including the same to increase the convenience.

Single crystal ingot diameter measuring system according to the embodiment may be provided in the chamber for growing a single crystal ingot diameter measuring sensor for measuring the diameter of the single crystal ingot growing in the chamber.

In addition, the single crystal ingot growth apparatus includes a chamber for growing a single crystal ingot; And a single crystal ingot diameter measuring system having a diameter measuring sensor for measuring a diameter of the single crystal ingot growing in the chamber.

According to the single crystal ingot diameter measuring system and the single crystal ingot growth apparatus including the same according to the embodiment, the productivity of the single crystal ingot can be maximized by reducing the process time and the error of the diameter measurement of the diameter measuring system of the ingot, and the defect yield is determined. Can be raised.

In addition, the embodiment can maximize the significance of the operation by automating the single crystal ingot diameter measurement process to the system.

In addition, the embodiment can determine the level of the melt gap (mm) by controlling the diameter of the single crystal ingot, it is possible to maintain the quality of the ingot uniformly reflecting the growth conditions in the subsequent growth process In the device process used as the wafer substrate, it is expected to secure stable chip yield.

In addition, in the embodiment, it is possible to check in real time whether the ingot axis is normal, that is, the ingot is eccentrically grown by the diameter sensor.

1 is a schematic diagram of a single crystal ingot growth apparatus according to an embodiment.
2 is a schematic diagram of a diameter measuring system of a single crystal ingot according to an embodiment.
3 is a conceptual diagram of a diameter measuring system of a single crystal ingot according to the first embodiment;
Figure 4 is an exemplary graph of the diameter of the single crystal ingot measured by the diameter measuring system of the single crystal ingot according to the first embodiment.
5 is a conceptual diagram of a diameter measuring system of a single crystal ingot according to the second embodiment.
6 is a three-dimensional graph illustrating a single crystal ingot diameter measured by the diameter measuring system of the single crystal ingot according to the second embodiment.

In the description of the embodiments, it is to be understood that each layer (film), area, pattern or structure may be referred to as being "on" or "under" the substrate, each layer Quot; on "and" under "are intended to include both" directly "or" indirectly " do. Also, the criteria for top, bottom, or bottom of each layer will be described with reference to the drawings.

In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size of each component does not necessarily reflect the actual size.

(Example)

1 is a schematic diagram of a single crystal ingot growth apparatus 100 according to an embodiment.

The silicon single crystal growth apparatus 100 according to the embodiment may include a chamber 110, a crucible (not shown), a heater (not shown), a pulling unit 140, and the like.

For example, the single crystal growth apparatus 100 according to the embodiment is provided in the chamber 110, the inside of the chamber 110, a crucible (not shown) for accommodating a silicon melt, and the chamber 110. It is provided therein, and may include a pulling unit 140 coupled to a heater (not shown) and seed crystal (not shown) for heating the crucible at one end.

The chamber 110 provides a space in which predetermined processes are performed to grow a single crystal ingot for a silicon wafer used as an electronic component material such as a semiconductor.

Radiation insulators (not shown) may be installed on the inner wall of the chamber 110 to prevent heat of the heater from being discharged to the side wall of the chamber 110.

The embodiment can adjust various factors such as the pressure conditions inside the rotation of the quartz crucible to control the oxygen concentration during silicon single crystal growth.

The crucible (not shown) is provided inside the chamber 110 to contain the silicon melt SM and may be made of quartz. The outside of the crucible may be provided with a crucible support made of graphite to support the crucible. The crucible support is fixedly installed on a rotating shaft (not shown), which can be rotated by a driving means (not shown) so that the solid-liquid interface maintains the same height while rotating and elevating the crucible.

The heater (not shown) may be provided inside the chamber 110 to heat the crucible. For example, the heater may have a cylindrical shape surrounding the crucible support.

Example is a manufacturing method for the growth of silicon single crystal ingot (Czochralsk: CZ) method of growing the crystal while immersing the seed crystal (seed crystal), which is a single crystal in a silicon melt (SM), and slowly pulling it up. It can be adopted.

According to this method, first, a necking process of growing thin and long crystals from seed crystals is carried out, followed by a shouldering process in which the crystals are grown in a radial direction to a target diameter, and then a constant diameter is obtained. After the body growing process to grow into a crystal having a certain length, after the body growing by a certain length, the single crystal growth is finished through a tailing process that gradually decreases the diameter of the crystal and finally separates it from the molten silicon. do.

Hereinafter, a single crystal ingot diameter measuring system and a single crystal growth apparatus including the same will be described in detail with reference to FIGS. 2 to 6.

2 is a schematic diagram of a diameter measuring system of a single crystal ingot according to an embodiment, FIG. 3 is a conceptual diagram of a diameter measuring system of a single crystal ingot according to a first embodiment, and FIG. 4 is a diameter measurement of a single crystal ingot according to a first embodiment Exemplary graph of diameter of single crystal ingot measured by the system.

The embodiment improves the conventional ingot diameter measuring system so that the diameter of the ingot can be used by measuring and reflecting the diameter of the ingot in real time during the ingot growth process to increase productivity and to control the G value important in crystal quality. The single crystal ingot diameter measuring system and the single crystal ingot growth apparatus including the same can be used to increase the accuracy of diameter measurement, increase the quality uniformity and the yield of defects, and reflect the real time to automate the process to increase the convenience of the operator. To provide.

In order to solve the above problems, the single crystal ingot growth apparatus 100 according to the embodiment is provided in the chamber 110 and the chamber 110 for growing a single crystal ingot, and the single crystal ingot growing in the chamber 110 ( It may include a single crystal ingot diameter measuring system having a diameter sensor 130 for measuring the diameter of the (Ingot).

The single crystal ingot diameter measuring system according to the embodiment and the single crystal growth apparatus including the same are conventionally used to measure the diameter in a single process after the single crystal growing (Growing) process in the single crystal growing (Growing) process so that the single crystal in the equipment By installing a diameter sensor (Sensor) to measure the diameter in real time and reflecting it in the system can be equipped with a monitoring system to facilitate the operator.

The chamber 110 may include a growth chamber 111 in which the ingot grows and a cooling chamber 112 in which the ingot is raised and cooled. For example, the diameter measurement may be performed as illustrated in FIGS. 1 and 2. The sensor 130 may be installed in the cooling chamber 112 but is not limited thereto.

In an embodiment, the diameter measuring sensor 130 may be provided on an inner side surface of the chamber 110, but is not limited thereto. For example, the diameter measuring sensor 130 may be provided on the inner surface of the cooling chamber 112 or on the outer surface.

According to an embodiment, the diameter of the ingot may be measured by measuring the left and right distances of the ingot using the wavelength of the diameter measuring sensor 130, but is not limited thereto. Subsequently, the measured ingot diameter value may be reflected in the control device of the single crystal growth apparatus, thereby systemizing the ingot diameter in real time to analyze and monitor the ingot diameter as shown in FIG. 4.

For example, an ultrasonic sensor or an infrared sensor of the diameter measuring sensor 130 may be employed, but is not limited thereto. For example, the ultrasonic sensor may obtain the diameter information of the ingot by measuring the time until the emitted ultrasonic pulse is reflected from the surface of the ingot and returned to the ultrasonic sensor. For example, a method of calculating a distance by measuring a delay time from transmitting an ultrasonic wave to returning and compensating a sound velocity according to the temperature of the ultrasonic wave in the air may be used.

For example, the distance H from the ultrasonic sensor to the ingot can be expressed as H (m) = (t / 2) × u, t is the required time (sec), and u is the velocity of gas in the air. Indicates.

In addition, when the diameter measuring sensor 130 is an infrared sensor, it is a sensor using infrared rays, the infrared rays generated in the light emitting unit hit the ingot and reflected, and the light receiving unit measures the intensity of the reflected light to know the distance to the ingot Can be.

In one embodiment, the diameter measuring sensor 130 may be provided as one or more as shown in FIG. For example, the diameter measuring sensor 130 may be one, but is not limited thereto, and two or more diameter measuring sensors 130 may be installed to reduce the measuring error of the diameter and increase the measuring accuracy. For example, in FIG. 3, four measurement sensors 130a 130b, 130c, and 130d are arranged at an angle of 90 ° to each other, but are not limited thereto.

In an embodiment, the diameter sensor 130 may rotate in response to the rotation of the ingot. For example, the diameter sensor 130 is rotated to coincide with the rotation of the single crystal ingot so that the diameter of the single crystal ingot can be precisely measured.

In the single crystal ingot diameter measuring system according to the embodiment and the single crystal growth apparatus including the same, the diameter measurement sequence is as follows.

When the growing process of the single crystal ingot is started in the single crystal growth apparatus, the diameter measuring sensor 130 located in the cooling chamber 112 starts to operate.

When the single crystal ingot is placed in the diameter measuring sensor 130, it automatically starts to scan the diameter profile.

This direct profile is converted into body length according to the position of the seed cable.

The converted value is reflected in the equipment system and graphed on the screen console.

According to the single crystal ingot diameter measuring system and the single crystal ingot growth apparatus including the same according to the embodiment, the productivity of the single crystal ingot can be maximized by reducing the process time and the error of the diameter measurement of the diameter measuring system of the ingot, and the defect yield is determined. Can be raised.

In addition, the embodiment can maximize the significance of the operation by automating the single crystal ingot diameter measurement process to the system.

In addition, the embodiment can determine the level of the melt gap (mm) by controlling the diameter of the single crystal ingot, it is possible to maintain the quality of the ingot uniformly reflecting the growth conditions in the subsequent growth process In the device process used as the wafer substrate, it is expected to secure stable chip yield.

5 is a conceptual diagram of a diameter measuring system of a single crystal ingot according to a second embodiment, and FIG. 6 is a three-dimensional graph illustrating a single crystal ingot diameter measured by a diameter measuring system of a single crystal ingot according to a second embodiment.

In the second embodiment, as shown in FIG. 5, the diameter measuring sensor 130 may be tilted to measure the ingot shape in three dimensions as illustrated in FIG. 6. The tilting angle of the diameter measuring sensor 130 may be less than or equal to 180 ° from 0 ° or more.

According to the second embodiment, it is possible to check in real time whether the ingot axis is normal, that is, the ingot is eccentrically grown by the diameter detecting sensor.

In an embodiment, the diameter measuring sensor 130 may be installed in the growth chamber 111 to enable real-time measurement of the ingot diameter near the melt. In this case, the embodiment may further include an overheat protection device (not shown) for protecting the diameter measuring sensor.

How to measure Measuring process Measuring interval
(mm) Measurement error
(mm) Process time
(hr) Quality Defective Rate (%) Comparative example Measure with Zig with Ingot Dia Profiler Separate Dia Measuring Process 10 mm 1 ~ 1.5mm 6 10% Example Growing process
Scan method Growing process (no additional process) 1mm 0.1mm 0 4%

Table 1 shows the results of measuring the ingot diameters according to Comparative Examples and Examples. In Table 1, the measurement interval is a range that can be measured as a minimum interval, in the case of the embodiment has the advantage that can be precisely measured at intervals of 1mm, the measurement error is an error that can be guaranteed by the equipment, the embodiment is about 0.1mm There is an advantage that can guarantee the error range of the degree. In addition, in Table 1, the defective rate was calculated based on (DSOD ~ LDP Accept length) / (Prime Ingot length). In the case of the example, the defective rate was remarkably improved compared to the comparative example.

In addition, the embodiment has the advantage that a separate diameter measurement process time is not required compared to the comparative example by measuring the diameter of the ingot in a single crystal ingot growth process in real time.

According to the single crystal ingot diameter measuring system and the single crystal ingot growth apparatus including the same according to the embodiment, the productivity of the single crystal ingot can be maximized by reducing the process time and the error of the diameter measurement of the diameter measuring system of the ingot, and the defect yield is determined. Can be raised.

In addition, the embodiment can maximize the significance of the operation by automating the single crystal ingot diameter measurement process to the system.

In addition, the embodiment can determine the level of the melt gap (mm) by controlling the diameter of the single crystal ingot, it is possible to maintain the quality of the ingot uniformly reflecting the growth conditions in the subsequent growth process In the device process used as the wafer substrate, it is expected to secure stable chip yield.

In addition, in the embodiment, it is possible to check in real time whether the ingot axis is normal, that is, the ingot is eccentrically grown by the diameter sensor.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Accordingly, the contents of such combinations and modifications should be construed as being included in the scope of the embodiments.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention. It can be seen that the modification and application of branches are possible. For example, each component specifically shown in the embodiment can be modified. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.

Claims (11)

And a diameter measuring sensor provided in the chamber for growing the single crystal ingot to measure the diameter of the single crystal ingot growing in the chamber, wherein the diameter measuring sensor tilts at a predetermined angle. The method according to claim 1,
The diameter measuring sensor,
Single crystal ingot diameter measurement system provided on the inner side of the chamber. The method according to claim 1,
The diameter measuring sensor,
One or more single crystal ingot diameter measuring system. The method according to claim 1,
The diameter measuring sensor,
Single crystal ingot diameter measuring system for rotating in response to the rotation of the ingot. delete The method according to claim 1,
The chamber includes a growth chamber in which the ingot grows and a cooling chamber in which the ingot is raised and cooled,
The diameter measuring sensor is a single crystal ingot diameter measuring system provided in the cooling chamber. The method according to claim 1,
The chamber includes a growth chamber in which the ingot grows and a cooling chamber in which the ingot is raised and cooled,
The diameter measuring sensor is a single crystal ingot diameter measuring system provided in the growth chamber. The method of claim 7, wherein
Single crystal ingot diameter measuring system further comprises an overheat protection device for protecting the diameter measuring sensor. The method according to claim 1,
The diameter measuring sensor
Single crystal ingot diameter measurement system comprising an ultrasonic sensor or an infrared sensor. A chamber for growing a single crystal ingot; And
And a single crystal ingot diameter measuring system having a diameter measuring sensor for measuring a diameter of the single crystal ingot growing in the chamber, wherein the diameter measuring sensor tilts at a predetermined angle. The method of claim 10,
The single crystal ingot diameter measuring system,
A single crystal ingot growth apparatus comprising the single crystal ingot diameter measuring system according to any one of claims 2 to 9.

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