KR101121981B1 - 기판처리장치 - Google Patents
기판처리장치 Download PDFInfo
- Publication number
- KR101121981B1 KR101121981B1 KR1020100029397A KR20100029397A KR101121981B1 KR 101121981 B1 KR101121981 B1 KR 101121981B1 KR 1020100029397 A KR1020100029397 A KR 1020100029397A KR 20100029397 A KR20100029397 A KR 20100029397A KR 101121981 B1 KR101121981 B1 KR 101121981B1
- Authority
- KR
- South Korea
- Prior art keywords
- chamber
- substrate
- exhaust port
- pumping
- space
- Prior art date
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
도 2는 본 발명의 일 실시예에 따른 기판처리장치의 단면도이다.
도 3은 도 2에 도시된 펌핑어댑터의 사시도이다.
도 4는 본 실시예에 따른 펌핑어댑터를 사용하였을때의 효과를 설명하기 위한 그래프이다.
13...배기구 20...기판지지대
30...가스분사기 40...펌핑어댑터
Claims (4)
- 기판에 대한 공정이 행해지는 공간부가 형성되어 있으며, 일측에 배기구가 관통 형성되어 있는 챔버;
상기 챔버의 내부에 설치되며, 기판이 안착되는 기판지지대;
상기 기판지지대의 상방에 배치되며, 상기 기판을 향하여 공정가스를 분사하는 가스분사기;
상기 배기구에 연결되며, 챔버의 공간부에 진공을 형성하는 펌핑유닛; 및
상기 배기구의 단면적을 변경하기 위한 조절수단;을 포함하고,
상기 조절수단은 중공의 형상으로 형성되며 상기 배기구에 삽입되는 펌핑어댑터를 포함하는 것을 특징으로 하는 기판처리장치. - 삭제
- 제1항에 있어서,
상기 펌핑어댑터는 중공의 원통 형상으로 형성되어 상기 배기구에 삽입되는 몸통부와, 상기 몸통부의 단부로부터 외측 방향으로 연장 형성되며 상기 챔버의 내측면에 밀착되는 플랜지부를 포함하는 것을 특징으로 하는 기판처리장치. - 제3항에 있어서,
상기 펌핑어댑터는 세라믹 또는 알루미늄 재질로 이루어지는 것을 특징으로 하는 기판처리장치.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100029397A KR101121981B1 (ko) | 2010-03-31 | 2010-03-31 | 기판처리장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100029397A KR101121981B1 (ko) | 2010-03-31 | 2010-03-31 | 기판처리장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20110109602A KR20110109602A (ko) | 2011-10-06 |
KR101121981B1 true KR101121981B1 (ko) | 2012-03-09 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020100029397A KR101121981B1 (ko) | 2010-03-31 | 2010-03-31 | 기판처리장치 |
Country Status (1)
Country | Link |
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KR (1) | KR101121981B1 (ko) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4291499B2 (ja) | 2000-06-28 | 2009-07-08 | パナソニック株式会社 | 真空処理装置 |
-
2010
- 2010-03-31 KR KR1020100029397A patent/KR101121981B1/ko active IP Right Grant
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4291499B2 (ja) | 2000-06-28 | 2009-07-08 | パナソニック株式会社 | 真空処理装置 |
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Publication number | Publication date |
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KR20110109602A (ko) | 2011-10-06 |
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