KR101101631B1 - Digital amplifier for saving power - Google Patents
Digital amplifier for saving power Download PDFInfo
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- KR101101631B1 KR101101631B1 KR1020100115835A KR20100115835A KR101101631B1 KR 101101631 B1 KR101101631 B1 KR 101101631B1 KR 1020100115835 A KR1020100115835 A KR 1020100115835A KR 20100115835 A KR20100115835 A KR 20100115835A KR 101101631 B1 KR101101631 B1 KR 101101631B1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/181—Low frequency amplifiers, e.g. audio preamplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/03—Indexing scheme relating to amplifiers the amplifier being designed for audio applications
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- Power Engineering (AREA)
- Multimedia (AREA)
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Abstract
Description
본 발명은 디지털 앰프에 관한 것으로, 보다 상세하게는 소비전력을 감소시키도록 하는 초절전형 디지털 앰프에 관한 것이다.
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to digital amplifiers and, more particularly, to ultra-low power digital amplifiers for reducing power consumption.
일반적으로 음향증폭기 즉, 앰프는 주로 A, B, AB급의 아날로그 앰프와 D급의 디지털 앰프로 분류된다. 앰프에 있어서 그 동안 높은 효율보다는 선형성이 더 강조되어왔으므로,In general, acoustic amplifiers, or amplifiers, are mainly classified into analog amplifiers of class A, B, and AB and digital amplifiers of class D. In the amplifier, linearity has been emphasized more than high efficiency.
주로 선형성이 뛰어난 아날로그 앰프가 사용되어 왔다.
Primarily linear analog amplifiers have been used.
그런데, 이런 아날로그 앰프는 에너지 효율이 나빠 막대한 소비전력이 발생하는 문제점이 있었다.
However, such an analog amplifier has a problem in that enormous power consumption occurs due to poor energy efficiency.
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본 발명은 상기와 같은 문제점을 해결하기 위해 안출 된 것으로서, 그 목적은 소비전력을 감소시키도록 하는 초절전형 디지털 앰프를 제공하는 데 있다.
The present invention has been made to solve the above problems, an object of the present invention to provide an ultra-low power digital amplifier to reduce the power consumption.
상기의 목적을 달성하기 위한 본 발명의 특징에 따르면,
인가받은 구동 신호를 일정레벨로 증폭하여 출력하는 프리 앰프(100)와 상기 프리 앰프(100)의 끝단부에 설치된 4.7K 저항(R28)의 제1전달부(104)와 상기 제1전달부(104)의 4.7K 저항(R28)에 병렬로 연결된 콘덴서(C53), 0.1㎌ 전해콘덴서(C52), 120K 저항(R27)으로 이루어진 제2전달부(106)와, 상기 제2전달부(106)의 120K 저항(R27)에 연결되되, 상기 제2전달부(106)로부터 출력되는 구동 신호에 의해 트랜지스터(Q3)를 동작시키는 0.1㎌ 전해콘덴서(C50), 10K 저항(R26), 10K 저항(R25)으로 이루어진 제1동작수단(108)과, 상기 제1동작수단(108)의 10K 저항(R25)에 연결되되, 상기 제1동작수단(108)으로부터 출력되는 동작신호에 의해 트랜지스터(Q2)를 동작시키되, 상기 트랜지스터(Q2)의 동작시 DC3.3V를 충전시키는 1㎌ 전해콘덴서(C48), 10K 저항(R24)으로 이루어진 제2동작수단(110)이 구성된 초절전형 디지털 앰프에 있어서,
상기 제2동작수단(110)의 10K 저항(R24)에 연결되어 상기 제2동작수단(110)의 DC3.3V 또는 1㎌ 전해콘덴서(C48)의 충전된 전류를 메인 앰프(112)로 전달하는 뮤터단자(MUTE)가 더 구성된다.
According to a feature of the present invention for achieving the above object,
The
It is connected to the 10K resistor (R24) of the second operating means 110 to transfer the charged current of the DC 3.3V or 1 kHz electrolytic capacitor (C48) of the second operating means 110 to the
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본 발명에 따른 초절전형 디지털 앰프는 소비전력을 감소시키는 효과가 있다.
Ultra low power digital amplifier according to the present invention has the effect of reducing the power consumption.
도 1은 본 발명에 따른 초절전형 디지털 앰프의 회로 구성도이다.1 is a circuit diagram of an ultra-low power digital amplifier according to the present invention.
이하, 첨부된 도면을 참조하여 본 발명에 따른 초절전형 디지털 앰프의 바람직한 실시예를 상세히 설명한다.Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the ultra-low power digital amplifier according to the present invention.
도 1은 본 발명에 따른 초절전형 디지털 앰프의 회로 구성도이다.
도 1에 도시된 바와 같이, 본 발명에 따른 초절전형 디지털 앰프는,1 is a circuit diagram of an ultra-low power digital amplifier according to the present invention.
As shown in Figure 1, the ultra-low power digital amplifier according to the present invention,
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인가받은 구동 신호를 일정레벨로 증폭하여 출력하는 프리 앰프(100)와 상기 프리 앰프(100)의 끝단부에 설치된 4.7K 저항(R28)의 제1전달부(104)와 상기 제1전달부(104)의 4.7K 저항(R28)에 병렬로 연결된 콘덴서(C53), 0.1㎌ 전해콘덴서(C52), 120K 저항(R27)으로 이루어진 제2전달부(106)와;The
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상기 제2전달부(106)의 120K 저항(R27)에 연결되되, 상기 제2전달부(106)로부터 출력되는 구동 신호에 의해 트랜지스터(Q3)를 동작시키는 0.1㎌ 전해콘덴서(C50), 10K 저항(R26), 10K 저항(R25)으로 이루어진 제1동작수단(108)과;A 0.1 ㎌ electrolytic capacitor C50 and a 10K resistor connected to the 120K resistor R27 of the
상기 제1동작수단(108)의 10K 저항(R25)에 연결되되, 상기 제1전달동작수단(108)으로부터 출력되는 동작신호에 의해 트랜지스터(Q2)를 동작시키되, 상기 트랜지스터(Q2)의 동작시 DC3.3V를 충전시키는 1㎌ 전해콘덴서(C48), 10K 저항(R24)으로 이루어진 제2동작수단(110)과;It is connected to the 10K resistor R25 of the first operating means 108, and operates the transistor Q2 by the operation signal output from the first transfer operation means 108, the operation of the transistor Q2 Second operating means (110) consisting of a 1 kHz electrolytic capacitor (C48) and a 10K resistor (R24) for charging DC3.3V;
상기 제2동작수단(110)의 10K 저항(R24)에 연결되어 상기 제2동작수단(110)의 DC3.3V 또는 1㎌ 전해콘덴서(C48)의 충전된 전류를 메인 앰프(112)로 전달하는 뮤터단자(MUTE)로 구성된다.It is connected to the 10K resistor (R24) of the second operating means 110 to transfer the charged current of the DC 3.3V or 1 kHz electrolytic capacitor (C48) of the second operating means 110 to the
상기와 같이 구성된 본 발명에 따른 초절전형 디지털 앰프의 회로 동작을 설명하면 다음과 같다.Referring to the circuit operation of the ultra-low power digital amplifier according to the present invention configured as described above are as follows.
프리 앰프(100)에 구동 신호가 인가되면, 프리 앰프(100)는 출력 단자(PRE OUT)로 일정레벨로 증폭된 구동 신호를 출력한다.When a driving signal is applied to the
그리고, 상기 출력단자(PRE OUT)는 4.7K 저항(R28)이 연결된 제1전달부(104)로 구동 신호를 출력하고, 상기 제1전달부(104)는 콘덴서(C53), 0.1㎌ 전해콘덴서(C52), 120K 저항(R27)으로 이루어진 제2전달부(106)로 구동 신호를 출력한다.In addition, the output terminal PRE OUT outputs a driving signal to the
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그리고, 제2전달부(106)는 트랜지스터(Q3), 0.1㎌ 전해콘덴서(C50), 10K 저항(R26), 10K 저항(R25)으로 이루어진 제1동작수단(108)으로 구동 신호를 출력한다. 이에 따라, 제1동작수단(108)의 트랜지스터(Q3)가 동작한다.The
상기 트랜지스터(Q3)가 동작하면, 트랜지스터(Q2), 1㎌ 전해콘덴서(C48), 10K 저항(R24)으로 이루어진 제2동작수단(110)의 상기 트랜지스터(Q2)가 동작함과 동시에 상기 트랜지스터(Q2)의 동작에 의해 DC3.3V가 상기 1㎌ 전해콘덴서(C48)에 충전된다.When the transistor Q3 is operated, the transistor Q2 of the second operation means 110, which is composed of the transistor Q2, the 1 kHz electrolytic capacitor C48, and the 10K resistor R24, operates and the transistor ( By the operation of Q2), DC3.3V is charged to the 1 kHz electrolytic capacitor C48.
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따라서, 상기 DC3.3V은 뮤트단자(MUTE)에 공급되어 매인 앰프(112)를 정상 동작시킨다.Thus, the DC3.3V is supplied to the mute terminal (MUTE) to operate the
만약, 프리 앰프(100)에 인가되는 구동 신호가 차단되면,If the driving signal applied to the
상기 제1전달부(104)의 4.7K 저항(R28)에도 신호가 차단됨으로 상기 제1동작수단(108)의 트랜지스터(Q3)가 동작하지 않고 이어서, 상기 제2동작수단(110)의 트랜지스터(Q2)가 동작을 하지 않는바, DC3.3V가 차단된다.Since the signal is also blocked at the 4.7K resistor R28 of the
이때, 상기 제2동작수단(110)의 1㎌ 전해콘덴서(C48)에 충전된 전류가 메인 앰프(112)로 방전된다.At this time, the current charged in the 1 kHz electrolytic capacitor C48 of the second operation means 110 is discharged to the
따라서, 상기 메인 앰프(112)는 1㎌ 전해콘덴서(C48)가 방전될 때까지 정상 동작을 한다.Accordingly, the
여기서, 방전시간은 9~11초이다.Here, the discharge time is 9 to 11 seconds.
그리고, 방전이 되어서 뮤트단자(MUTE)에 0.5V 이하가 되면, 메인 앰프(112)는 수면 상태가 된다.When the discharge terminal is discharged to 0.5 V or less in the mute terminal MUTE, the
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이상의 본 발명은 상기에 기술된 실시예들에 의해 한정되지 않고, 당업자들에 의해 다양한 변형 및 변경을 가져올 수 있으며, 이는 첨부된 청구항에서 정의되는 본 발명의 취지와 범위에 포함된다.
The invention being thus described, it will be obvious that the same way may be varied in many ways. Such modifications are intended to be within the spirit and scope of the invention as defined by the appended claims.
100 : 프리 앰프
R28 : 4.7K 저항
104 : 제1전달부
C53 : 콘덴서
C52 : 0.1㎌ 전해콘덴서
R27 : 120K 저항
106 : 제2전달부100: preamp
R28: 4.7K resistor
104: first delivery unit
C53: Condenser
C52: 0.1㎌ Electrolytic Capacitor
R27: 120K Resistor
106: second delivery unit
Claims (1)
상기 제2동작수단(110)의 10K 저항(R24)에 연결되어 상기 제2동작수단(110)의 DC3.3V 또는 1㎌ 전해콘덴서(C48)의 충전된 전류를 메인 앰프(112)로 전달하는 뮤터단자(MUTE)가 더 구성된 것을 특징으로 하는 초절전형 디지털 앰프.
The first amplifier 104 and the first transmitter 104 of the 4.7K resistor R28 provided at the end of the preamplifier 100 to amplify and output the driving signal to a predetermined level. A second transfer unit 106 comprising a capacitor C53, a 0.1 kΩ electrolytic capacitor C52, and a 120K resistor R27 connected in parallel to the 4.7K resistor R28 of the 104; and the second transfer unit 106; 0.1K electrolytic capacitor (C50), 10K resistor (R26), and 10K resistor (R25), which are connected to a 120K resistor (R27) of the transistor and operate the transistor (Q3) by a drive signal output from the second transfer unit (106). Is connected to a first operating means (108) and a 10K resistor (R25) of the first operating means (108), and the transistor (Q2) is driven by an operating signal output from the first operating means (108). It operates, but the ultra-low power type consisting of a second operating means 110 consisting of a 1 ㎌ electrolytic capacitor (C48), 10K resistor (R24) for charging DC3.3V during operation of the transistor (Q2) In the digital amplifier,
It is connected to the 10K resistor (R24) of the second operating means 110 to transfer the charged current of the DC 3.3V or 1 kHz electrolytic capacitor (C48) of the second operating means 110 to the main amplifier 112. Ultra-low power digital amplifier, characterized in that the muter terminal (MUTE) is further configured.
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100424510B1 (en) * | 1995-08-08 | 2004-10-22 | 가부시끼가이샤 히다치 세이사꾸쇼 | Semiconductor memory device and sense circuit method |
US20070252644A1 (en) * | 2004-09-21 | 2007-11-01 | Shigeji Ohama | Audio Power Amplifier Ic and Audio System Provided with the Same |
US20070268069A1 (en) * | 2005-05-19 | 2007-11-22 | Lg Electronics Inc. | Apparatus and method for controlling temperature of electronic apparatus |
US20100127777A1 (en) * | 2008-11-27 | 2010-05-27 | Seiko Epson Corporation | Power amplifier and liquid jet printing apparatus |
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- 2010-11-19 KR KR1020100115835A patent/KR101101631B1/en active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100424510B1 (en) * | 1995-08-08 | 2004-10-22 | 가부시끼가이샤 히다치 세이사꾸쇼 | Semiconductor memory device and sense circuit method |
US20070252644A1 (en) * | 2004-09-21 | 2007-11-01 | Shigeji Ohama | Audio Power Amplifier Ic and Audio System Provided with the Same |
US20070268069A1 (en) * | 2005-05-19 | 2007-11-22 | Lg Electronics Inc. | Apparatus and method for controlling temperature of electronic apparatus |
US20100127777A1 (en) * | 2008-11-27 | 2010-05-27 | Seiko Epson Corporation | Power amplifier and liquid jet printing apparatus |
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