KR101101178B1 - Apparatus and method for plasma ion implantation of noble metals and method of attaining nano-sized noble metal composites by using the same - Google Patents

Abstract

A plasma ion implantation apparatus of a noble metal according to an embodiment of the present invention is provided. The precious metal plasma ion implantation apparatus includes a vacuum chamber for keeping the interior in a vacuum state, a magnetron deposition source disposed inside the vacuum chamber for thin film deposition and mounted with a precious metal sputtering target, and arranged to face the magnetron deposition source in the vacuum chamber. The sample mounting table to which the sample is mounted and the pulse direct current power is applied to the magnetron deposition source to ionize the noble metal sputtered from the magnetron deposition source, and the high voltage pulse synchronized to the pulse direct current power is applied to the sample holder. And a high voltage pulse power supply for accelerating ions of the precious metal toward the sample.

Description

Apparatus and method for plasma ion implantation of precious metals and method for forming precious metal nanocomposites using the same {APPARATUS AND METHOD FOR PLASMA ION IMPLANTATION OF NOBLE METALS AND METHOD OF ATTAINING NANO-SIZED NOBLE METAL COMPOSITES BY USING THE SAME}

The present invention relates to an apparatus and method for plasma ion implantation of precious metals. The present invention also relates to a method of forming a precious metal nanocomposite by heat treating a dielectric into which precious metal plasma ions are implanted.

In order to incorporate noble metal nanoparticles into a dielectric such as glass, a method of mixing and solidifying glass and a noble metal melt has been used. This method can increase the volume fraction of nanometals, which has limitations. Recently, a method of implanting precious metal ions into the surface of solid glass has been developed (RH Magruder III et al, Journal of Non-Crystalline Soilds, 176 (1994) 299-). 303).

In Margruder's paper and in "Nuclear Instruments and Methods in Physics Research B 166-167 (2000) 857-863, G. Battaglin et. Al.", Noble metal ions such as Au, Ag, Cu, etc. It is accelerated to several hundred keV) and injected into the surface of glass, and it is possible to form a layer into which precious metal ions are implanted up to the surface of the material. Will be formed.

The conventional ion implantation technology has many advantages, but the ion implantation technology is very limited to be used in other material fields except the semiconductor field. The conventional ion implantation apparatus is a device developed for doping impurities into a semiconductor wafer, which is a planar sample. The ion implantation apparatus extracts ions from an ion source and accelerates them to enter a sample in the form of an ion beam. You have to shake it. The method of implanting ions in the form of ion beams is based on the principle of the line-of-sight implantation. There are technical disadvantages such as the necessity of masking to prevent sputtering phenomenon due to oblique incident ions. It also has the disadvantage that the equipment is very expensive compared to other surface modification equipment.

Meanwhile, as another method for implanting precious metal ions, a method using pulse cathodic arc (MEVVA) is described in "Surface Modification of Medical Metals by Ion Implantation of Silver and Copper" Wan YZ, Raman S, He F, Huang Y., Vacuum 2007; 81 (9): 1114-1118. However, when the pulsed cathode arc plasma is used, macro particles of a large size are generated due to the arc, and are deposited on the surface of the ion implantation sample. In order to prevent this, there is a problem in that a filter using a magnetic field must be used.

The present invention is to solve the above problems, it is an object of the present invention to provide a precious metal plasma ion implantation apparatus and method.

Another object of the present invention is to provide a method for forming a noble metal nanocomposite.

Plasma ion implantation apparatus of a noble metal according to an embodiment of the present invention, a vacuum chamber for maintaining the interior in a vacuum state, a magnetron deposition source disposed inside the vacuum chamber for the deposition of a thin film and the precious metal sputtering target is mounted, and in the vacuum chamber A sample mounting table on which the sample is mounted to face the magnetron deposition source, a pulse direct current power supply that ionizes a noble metal sputtered from the magnetron deposition source by applying pulse direct current power to the magnetron deposition source, and pulse direct current to the sample mounting table. It includes a high voltage pulse power supply for applying a high voltage pulse synchronized to the power to accelerate the ions of the precious metal toward the sample. Preferably, the plasma ion implantation apparatus of the noble metal may further include a gas supply unit for supplying a gas to be plasmaized to the vacuum chamber, and a gas control unit disposed between the gas supply unit and the vacuum chamber.

Plasma ion implantation method of a precious metal according to an embodiment of the present invention, the step of placing a sample on the sample mounting table in the vacuum chamber, maintaining the interior of the vacuum chamber in a vacuum state, for generating a plasma in the vacuum chamber Supplying a gas, applying a pulsed DC power to the magnetron deposition source to plasma the precious metal, and applying a high voltage pulse synchronized with the pulsed DC power to the sample holder to accelerate ions of the precious metal toward the sample surface. Ion implantation.

The method for forming a noble metal nanocomposite according to an embodiment of the present invention includes positioning a dielectric on a sample mounting table in a vacuum chamber, maintaining the interior of the vacuum chamber in a vacuum state, and a gas for generating plasma in the vacuum chamber. Supplying the ions, ionizing the noble metal sputtered from the magnetron deposition source by applying pulsed direct current power to the magnetron deposition source, and applying high voltage pulses synchronized to the pulsed direct current power to the sample holder to direct ions of the noble metal toward the dielectric. Accelerating ion implantation onto the surface of the dielectric, and heat treating the dielectric implanted with the noble metal. Preferably, the dielectric is Si-O, Ge-O, Sn-O, Al-O, In-O, Cr-O, Mo-O, Ti-O, Zr-O, Hf-O, YO, Mg- O, Ta-O, WO, VO, Ba-Ti-O, Pb-Ti-O, Sr-Ti-O based oxides, Al-F, Zn-F, Mg-F, Ca-F, Na-F , Ba-F, Pb-F, Li-F, La-F fluoride, Si-N, Al-N, Ti-N, Zr-N, Hf-N, Ga-N, BN, In-N Nitride, Zn-S, Cd-S, Cu-S, Ba-S, Na-S, KS, Pb-S, As-S sulfides, Zn-Se, Bi-Se, Cd-Se, Cu- It may be selected from the group consisting of Se, Pb-Se, As-Se-based selenide, diamondlike carbon and mixtures thereof. Also preferably, the precious metal sputtered from the magnetron deposition source may be selected from the group consisting of gold (Au), silver (Ag), copper (Cu), platinum (Pt), palladium (Pd) and rhodium (Rh). .

In the apparatus and method of the present invention, the pulsed DC power applied to the magnetron deposition source has a density of 10 W / cm ² to 10 kw / cm ² , a frequency of 1 Hz to 10 kHz, and a pulse width of 10 usec to 1 msec. Can have

In the apparatus and method of the present invention, the high voltage pulse applied to the sample mounting table has a frequency of 1 Hz to 10 kHz synchronized with the pulsed DC power applied to the magnetron deposition source, a pulse width of 1 usec to 200 usec, It can have a negative high voltage pulse of -1 kv to -100 kV.

In the apparatus and method of the present invention, the vacuum chamber may have an internal gas pressure of 0.5 mTorr to 5 mTorr.

According to the noble metal plasma ion implantation apparatus and method of the present invention, plasma ions of the noble metal can be injected into a sample by applying pulsed DC power to the magnetron deposition source. Since the magnetron deposition source operates in the pulsed mode, it is possible to apply very high power at the moment the pulse is applied while maintaining a low average power so that there is no problem in cooling the magnetron deposition source. Therefore, it is possible to generate a high-density precious metal plasma and increase the ionization rate of the precious metal. The noble metal ions generated in this way are accelerated toward the sample by the synchronized negative high voltage pulse applied to the sample so that the precious metal ions are effectively injected into the surface of the sample.

According to the method for forming a noble metal nanocomposite in which the noble metal is heat-treated in the plasma ion-injected dielectric, the noble metal nanocomposite may be formed on the dielectric surface layer to form the noble metal nanocomposite composed of the noble metal nanoparticles and the dielectric matrix. As a result, various colors can be imparted to the dielectric.

1 is a view showing the configuration of a noble metal plasma ion implantation apparatus according to an embodiment of the present invention.
Figure 2 is a graph showing the transmission spectra measured after the heat treatment of the glass for plasma plasma-implanted LCD glass.

Hereinafter, a device and method for noble metal plasma ion implantation and a method for forming a noble metal nanocomposite according to an embodiment of the present invention will be described in detail.

1 is a view showing the configuration of a noble metal plasma ion implantation apparatus according to an embodiment of the present invention.

Referring to FIG. 1, the noble metal plasma ion implantation apparatus 100 according to the present invention includes a vacuum chamber 110 for maintaining an interior in a vacuum state, and a precious metal sputtering target disposed inside the vacuum chamber 110 for thin film deposition. The magnetron deposition source 120 to be mounted, the sample mounting table 130 is disposed to face the magnetron deposition source 120 in the vacuum chamber 110, the sample 131 is mounted, and the magnetron deposition source 120 A pulsed DC power supply 140 for ionizing the noble metal sputtered from the magnetron deposition source 120 by applying the pulsed DC power 141 to the high voltage pulse synchronized with the pulsed DC power 141 on the sample mounting table 130. And a high voltage pulse power supply 150 that applies 151 to accelerate ions of the precious metal toward the sample 131.

The principle of the noble metal plasma ion implantation apparatus 100 according to the present invention is as follows.

The vacuum chamber 110 maintains a predetermined degree of vacuum by the vacuum pump 111 and the vacuum valve 112, and is grounded through the ground portion 113.

First, after the sample 131 is mounted on the sample mounting table 130 located in the vacuum chamber 110, the vacuum degree inside the vacuum chamber 110 is exhausted to the high vacuum region by using the vacuum pump 111. Thereafter, the gas supply unit 161 introduces a gas for generating a plasma into the vacuum chamber 110 through the gas control unit 162 to adjust the pressure therein. The gas is controlled by the gas control unit 162 and the supply amount of gas is introduced into the vacuum chamber 110 through the gas valve 163. Preferably, the gas may include argon, neon, and the like. Also preferably, the gas pressure inside the vacuum chamber 110 is 0.5 mTorr to 5 mTorr. The reason is that the plasma generation is difficult at low pressure of 0.5 mTorr or lower while the gas pressure inside the vacuum chamber 110 is high. This is because the energy loss of the noble metal ions accelerated by the collision is very severe.

As described above, when the gas is introduced and the pressure inside the vacuum chamber 110 is stabilized, the pulsed DC power supply unit 140 uses the pulsed DC power supply 140 to the magnetron deposition source 120 mounted on the vacuum chamber 110. 141 is applied to operate the magnetron deposition source 120, and a negative high voltage pulse 151 is applied to the conductive sample mount 130 using the high voltage pulse power supply 150.

The pulsed DC power 141 applied to the magnetron deposition source 120 and the negative high voltage pulse 151 applied to the conductive sample mounting table 130 are operated in synchronization at the same frequency. The precious metal sputtered from the magnetron deposition source 120 is ionized by the high-density plasma at the moment when the magnetron deposition source 120 is pulsed on by the pulsed DC power 141, and the precious metal ions are conductive. This is because the negative high voltage pulse 151 applied to the sample mounting table 130 accelerates toward the sample 131 and implants ions into the surface of the sample 131. Therefore, the pulse DC power 141 and the high voltage pulse 151 must be synchronized.

The pulsed DC power 141 is applied to the magnetron deposition source 120 to operate the magnetron deposition source 120. The pulse direct current power 141 may apply high power at the moment a pulse is applied while maintaining a low average power. Preferably, the pulsed direct current power 141 is not necessarily limited to this, but has a density of 10 W / cm ² to 10 kw / cm ² , a frequency of 1 Hz to 10 kHz, and a pulse of 10 usec to 1 msec. It may have a width. While it is difficult to generate high density noble metal plasma with high ionization rate from the magnetron deposition source 120 with a low pulse DC power of 10 W / cm ² or less, a pulsed DC power supply 140 is practical to use a value of 10 kw / cm ² or more. ) There are many difficulties in the production. In addition, the low frequency of less than 1 Hz takes too much time for the precious metal plasma ion implantation process, while reducing the economic value of the present technology, while fabricating a pulsed DC power supply 140 that operates at a high frequency of 10 kHz or more. There are many difficulties. In addition, since the generation of high density precious metal plasma is not sufficient at a short pulse width of 10 usec or less, the ionization rate of the generated precious metal is low, whereas at a long pulse width of 1 msec or more, an arc is generated in the magnetron deposition source 120 due to the high pulse power. The process is unstable with high probability of occurrence.

In this embodiment, the high voltage pulse 151 accelerates the ions of the precious metal toward the sample 131 as a negative high voltage pulse. In addition, the high voltage pulse 151 applied to the sample mounting table 130 is not necessarily limited thereto, but the frequency of 1 Hz to 10 kHz which is the same frequency as the pulse direct current power 141 applied to the magnetron deposition source 120. The frequency must be synchronized and used. The pulse width is 1 usec to 200 usec, and the negative high voltage pulse uses a value of -1 kv to -100 kV. In the short pulse width of less than 1 usec, precious metal plasma ion implantation is not effective, and in the long pulse width of 200 usec or more, the plasma sheath due to the negative high voltage applied to the conductive sample holder 130 is too high. There is a possibility that the plasma is turned off while expanding a lot to touch the wall of the vacuum chamber 110, and as the time for which the high voltage is applied to the sample holder 130 becomes long, there is a high possibility that an arc occurs in the sample holder 130. In addition, at a low voltage of -1 kV or less, the depth at which the precious metal ions are implanted into the surface of the sample 131 is too shallow, and fabrication of the high voltage pulse power supply 150 of -100 kV or more is practically difficult.

The characteristics of the noble metal plasma ion implantation apparatus according to the present invention are as follows.

The magnetron deposition source 120, which is commonly used as a deposition source for thin film deposition, is equipped with a noble metal sputtering target to operate in a pulse mode using the pulsed DC power 141, and is synchronized with the negative high voltage. By applying the pulse 151 to the sample 131, the precious metal ions generated from the magnetron deposition source 120 may be accelerated to effectively inject the precious metal ions to the surface of the sample 131. When the magnetron deposition source 120 is operated in a pulse mode instead of continuous operation, very high pulse power can be applied at the moment pulse is applied while maintaining a low average power so that cooling of the magnetron deposition source 120 is not a problem. Therefore, it is possible to generate a high density precious metal plasma on the surface of the sputtering target, which increases the ionization rate of the precious metal emitted from the sputtering target surface. The ions of the precious metal generated in this way are accelerated toward the sample 131 by the synchronized negative high voltage pulse 151 applied to the sample 131, and the precious metal ions are effectively injected into the surface of the sample 131. Can be. In addition, although not shown, when RF power is applied between the magnetron deposition source 120 and the sample 131 by applying an RF antenna, the ionization rate of the noble metal emitted by generating an inductively coupled plasma may be further increased. In addition, by enabling the operation at a pressure lower than the normal operating pressure of the magnetron deposition source, it is possible to minimize the collision with the gas particles during the implantation of precious metal plasma ion to perform plasma ion implantation of the precious metal more effectively.

Precious metal plasma ion implantation method according to the invention, the step of placing the sample 131 on the sample mounting table 130 in the vacuum chamber 110, maintaining the interior of the vacuum chamber 110 in a vacuum state, Supplying a gas for generating plasma in the vacuum chamber 110, applying pulsed DC power to the magnetron deposition source 120 to ionize the noble metal, and synchronizing the pulsed DC power to the sample mount 130 Applying a high voltage pulse to accelerate the ions of the precious metal toward the sample 131 to ion implant the surface of the sample 131.

The method of forming a noble metal nanocomposite according to the present invention comprises the steps of: placing a dielectric on the sample mounting table 130 in the vacuum chamber 110, maintaining the interior of the vacuum chamber 110 in a vacuum state, Supplying a gas for generating plasma in the 110, applying a pulsed DC power 141 to the magnetron deposition source 120, and ionizing a precious metal sputtered from the magnetron deposition source 120, and a sample mounting table; Applying a high voltage pulse 151 synchronized to the pulsed DC power 141 to the 130 to accelerate ions of the noble metal toward the dielectric and implanting ions into the dielectric surface; do.

When the dielectric implanted with the noble metal ions is maintained at a high temperature, the noble metal dispersed at the atomic level diffuses to form clusters. The holding temperature is determined based on the melting point of the noble metal, but preferably the holding temperature is 400 to 1000 ° C and the holding time is about 1 hour. If the holding temperature is too low, the formation rate of the noble metal cluster is slow, and if the holding temperature is too high, the formation rate of the noble metal cluster is fast but its size grows rapidly.

Preferably, the dielectric is Si-O, Ge-O, Sn-O, Al-O, In-O, Cr-O, Mo-O, Ti-O, Zr-O, Hf-O, YO, Mg -O, Ta-O, WO, VO, Ba-Ti-O, Pb-Ti-O, Sr-Ti-O based oxides, Al-F, Zn-F, Mg-F, Ca-F, Na- F, Ba-F, Pb-F, Li-F, La-F fluoride, Si-N, Al-N, Ti-N, Zr-N, Hf-N, Ga-N, BN, In-N Nitrides of the system, Zn-S, Cd-S, Cu-S, Ba-S, Na-S, KS, Pb-S, As-S sulfides, Zn-Se, Bi-Se, Cd-Se, Cu It may be selected from the group consisting of se, Pb-Se, As-Se-based selenide, diamondlike carbon and mixtures thereof. In addition, the precious metal sputtered from the magnetron deposition source 120 may be selected from the group consisting of gold (Au), silver (Ag), copper (Cu), platinum (Pt), palladium (Pd) and rhodium (Rh). .

A noble metal plasma ion implantation experiment of the device according to the invention was carried out as follows.

As the magnetron deposition source 120, gold (Au) having a diameter of 75 mm and a thickness of 1 mm was used. LCD glass was used as the ion implantation sample 131 (or dielectric). After mounting the glass for LCD on the conductive sample mounting unit 130, the vacuum chamber was evacuated to a vacuum of 5 × 10 ^-6 Torr, argon gas was introduced to maintain the argon pressure in the vacuum chamber to 2 mTorr. In addition, the argon plasma is generated by applying RF power of 13.56 MHz and 200 Watt to the RF antenna for plasma generation, and the pulsed DC power 141 is applied to the precious metal magnetron deposition source 120 to operate the magnetron deposition source 120. It became. The applied pulse DC voltage 141 was -1.1 kV and the pulse DC current was 10 A, and a pulse power of about 220 W / cm ² was used. In addition, the frequency of pulse DC power was 100 Hz, and the pulse width was 200 usec. Therefore, the average power was 220 W, so that the cooling of the magnetron deposition source 120 was not a problem.

In addition, the precious metal magnetron deposition source 120 was operated in the above-described manner, and the precious metal plasma ion implantation process was performed for 30 minutes by applying a negative high voltage pulse 151 to the glass for LCD. The negative high voltage pulse 151 had a voltage of -60 kV and a pulse width of 40 usec, and was synchronized at a frequency of 100 Hz equal to the pulsed DC power applied to the precious metal magnetron deposition source 120. In addition, after the pulsed DC power of 200 usec was applied to the magnetron deposition source 120, a high voltage pulse having a pulse width of 40 usec was applied to the sample after about 100 usec. The precious metal plasma ions were implanted while the density of the precious metal plasma ions was sufficiently high.

The glass for LCD to which gold (Au) was plasma-ion-implanted by the above-mentioned noble metal plasma ion implantation method was heat-processed at 800 degreeC for 1 hour. As the atmospheric gas, 99.9% hydrogen gas was used. The glass for LCD did not have a special color in the state of Au (Iu) implantation, but the color of the specimen after heat treatment for 1 hour at 800 ℃ hydrogen atmosphere changed to light pink color.

Figure 2 is a graph showing the transmission spectra measured after the heat treatment of the glass for plasma plasma-implanted LCD glass.

Dielectric complexes such as precious metal nanoparticles and glass have long been used for the coloring of glass. It is a composite having a structure in which precious metal nanoparticles of several hundred nanometers or less are dispersed in glass. When light is incident on the nanocomposite coating material in which the metal nanoparticles are dispersed on a matrix, free electrons in the metal particles are moved and dielectrically constrained by the matrix, and a large dipole moment is induced. This will increase the size of the local electric field. The collective behavior of free electron clouds in metal particles due to the dielectric confinement effect is quantized with a natural frequency, which is called surface plasmon resonance.

Referring to FIG. 2, it can be observed that the transmittance is sharply lowered in the 541 nm wavelength band and a characteristic dip curve is formed. This is typically due to surface plasmon resonance absorption, which occurs when a certain amount of gold nanoparticles are present in the dielectric matrix, clearly demonstrating the formation of gold nanoparticles on the glass surface for LCDs (see, "Thin Solid Films 447"). -448 (2004) 68-73, SH Cho et. Al. ").

When surface plasmon resonance occurs, the absorption of light in the light corresponding to the resonant wavelength band is greatly increased. As a result, the transmission and reflection characteristics of the nanocomposite coating also show a corresponding characteristic spectrum. In the present invention, a coating having beautiful optical characteristics is achieved by using the reflection and transmission spectra generated by the surface plasmon resonance phenomenon.

As described above, it was confirmed that the formation of the composite of the noble metal nanoparticles and the dielectric material was possible by the noble metal ion implantation and heat treatment using the noble metal plasma.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. It will be clear to those who have knowledge of.

110: vacuum chamber
111: vacuum pump
112: vacuum valve
113: ground
120: deposition source
130: sample stand
140: pulsed DC power supply
150: high voltage pulse power supply
161: gas supply unit
162: gas control unit

Claims (16)

A vacuum chamber for keeping the interior in a vacuum state,
A magnetron deposition source disposed inside the vacuum chamber for thin film deposition and equipped with a precious metal sputtering target;
A sample mounting table disposed in the vacuum chamber so as to face the magnetron deposition source, and having a sample mounted thereon;
A pulse direct current power supply for applying ionizing pulse direct current to the magnetron deposition source to ionize a noble metal sputtered from the magnetron deposition source;
And a high voltage pulse power supply for applying high voltage pulses synchronized to the pulse DC power to the sample mounting table to accelerate ions of the precious metal toward the sample.
A device for implanting precious metal plasma ions into the sample surface or below. The method of claim 1,
The pulsed DC power applied to the magnetron deposition source has a density of 10 W / cm ² ~ 10 kw / cm ² ,
Precious metal plasma ion implantation device. The method of claim 1,
The pulsed DC power applied to the magnetron deposition source,
With a frequency of 1 Hz to 10 kHz,
Having a pulse width of 10 usec to 1 msec,
Precious metal plasma ion implantation device. The method of claim 1,
The high voltage pulse applied to the sample mounting table,
A frequency of 1 Hz to 10 kHz synchronized with the pulsed direct current power applied to the magnetron deposition source,
Pulse width of 1 usec to 200 usec,
Having a negative high voltage pulse of -1 kv to -100 kV,
Precious metal plasma ion implantation device. The method of claim 1,
The vacuum chamber has an internal gas pressure of 0.5 mTorr to 5 mTorr,
Precious metal plasma ion implantation device. The method of claim 5,
A gas supply unit for supplying a gas to be plasmaized to the vacuum chamber;
Further comprising a gas control unit disposed between the gas supply unit and the vacuum chamber,
Precious metal plasma ion implantation device. Placing the sample on the sample holder in the vacuum chamber;
Maintaining the interior of the vacuum chamber in a vacuum state;
Supplying a gas for generating plasma in the vacuum chamber;
Plasma-forming a precious metal by applying pulsed DC power to the magnetron deposition source,
Applying a high voltage pulse synchronized with the pulsed direct current to the sample holder to accelerate ions of the noble metal toward the sample, thereby implanting ions into the surface of the sample;
A method of implanting precious metal plasma ions into the sample surface or below. The method of claim 7, wherein
The pulsed DC power applied to the magnetron deposition source,
With a density of 10 W / cm ² to 10 kw / cm ² ,
With a frequency of 1 Hz to 10 kHz,
Having a pulse width of 10 usec to 1 msec,
Precious metal plasma ion implantation method. The method of claim 7, wherein
The high voltage pulse applied to the sample mounting table,
A frequency of 1 Hz to 10 kHz synchronized with the pulsed direct current power applied to the magnetron deposition source,
Pulse width of 1 usec to 200 usec,
Having a negative high voltage pulse of -1 kv to -100 kV,
Precious metal plasma ion implantation method. The method of claim 7, wherein
The vacuum chamber has an internal gas pressure of 0.5 mTorr to 5 mTorr,
Precious metal plasma ion implantation method. Placing the dielectric over the sample holder in the vacuum chamber;
Maintaining the interior of the vacuum chamber in a vacuum state;
Supplying a gas for generating plasma in the vacuum chamber;
Applying pulsed DC power to the magnetron deposition source to ionize the noble metal sputtered from the magnetron deposition source;
Applying a high voltage pulse synchronized with the pulsed direct current to the sample holder to accelerate ions of the noble metal toward the dielectric and implanting ions into the surface of the dielectric;
And heat-treating the dielectric into which the noble metal is ion implanted.
Method of Forming Precious Metal Nanocomposites. 12. The method of claim 11, wherein the dielectric is Si-O, Ge-O, Sn-O, Al-O, In-O, Cr-O, Mo-O, Ti-O, Zr-O, Hf-O, YO , Mg-O, Ta-O, WO, VO, Ba-Ti-O, Pb-Ti-O, Sr-Ti-O-based oxides, Al-F, Zn-F, Mg-F, Ca-F, Na-F, Ba-F, Pb-F, Li-F, La-F based fluoride, Si-N, Al-N, Ti-N, Zr-N, Hf-N, Ga-N, BN, In -N-based nitrides, Zn-S, Cd-S, Cu-S, Ba-S, Na-S, KS, Pb-S, As-S sulfides, Zn-Se, Bi-Se, Cd-Se Selected from the group consisting of Cu-Se, Pb-Se, As-Se-based selenides, diamondlike carbons, and mixtures thereof,
Method of Forming Precious Metal Nanocomposites. The precious metal sputtered from the magnetron deposition source is selected from the group consisting of gold (Au), silver (Ag), copper (Cu), platinum (Pt), palladium (Pd) and rhodium (Rh). ,
Method of Forming Precious Metal Nanocomposites. The method according to any one of claims 11 to 13,
The pulsed DC power applied to the magnetron deposition source,
With a density of 10 W / cm ² to 10 kw / cm ² ,
With a frequency of 1 Hz to 10 kHz,
Having a pulse width of 10 usec to 1 msec,
Precious Metal Nanocomposite Formation Method The method according to any one of claims 11 to 13,
The high voltage pulse applied to the sample mounting table,
A frequency of 1 Hz to 10 kHz synchronized with the pulsed direct current power applied to the magnetron deposition source,
Pulse width of 1 usec to 200 usec,
Having a negative high voltage pulse of -1 kv to -100 kV,
Method of forming precious metal nanocomposites. The method according to any one of claims 11 to 13,
The vacuum chamber has an internal gas pressure of 0.5 mTorr to 5 mTorr,
Method of forming precious metal nanocomposites.

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