KR101097334B1 - 박막 증착 장치 - Google Patents
박막 증착 장치 Download PDFInfo
- Publication number
- KR101097334B1 KR101097334B1 KR1020100014277A KR20100014277A KR101097334B1 KR 101097334 B1 KR101097334 B1 KR 101097334B1 KR 1020100014277 A KR1020100014277 A KR 1020100014277A KR 20100014277 A KR20100014277 A KR 20100014277A KR 101097334 B1 KR101097334 B1 KR 101097334B1
- Authority
- KR
- South Korea
- Prior art keywords
- deposition
- substrate
- thin film
- deposition source
- slits
- Prior art date
Links
- 230000008021 deposition Effects 0.000 title claims abstract description 236
- 238000000151 deposition Methods 0.000 claims abstract description 245
- 239000000758 substrate Substances 0.000 claims abstract description 152
- 238000000059 patterning Methods 0.000 claims abstract description 126
- 238000000427 thin-film deposition Methods 0.000 claims abstract description 90
- 239000000463 material Substances 0.000 claims abstract description 57
- 239000010409 thin film Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 33
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 23
- 239000010410 layer Substances 0.000 description 38
- 239000010408 film Substances 0.000 description 22
- 238000001704 evaporation Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 9
- 230000008020 evaporation Effects 0.000 description 8
- 239000012044 organic layer Substances 0.000 description 8
- 230000007547 defect Effects 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 229910001111 Fine metal Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229920002098 polyfluorene Polymers 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- YOZHUJDVYMRYDM-UHFFFAOYSA-N 4-(4-anilinophenyl)-3-naphthalen-1-yl-n-phenylaniline Chemical compound C=1C=C(C=2C(=CC(NC=3C=CC=CC=3)=CC=2)C=2C3=CC=CC=C3C=CC=2)C=CC=1NC1=CC=CC=C1 YOZHUJDVYMRYDM-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
- C23C14/044—Coating on selected surface areas, e.g. using masks using masks using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010145075A JP5352536B2 (ja) | 2009-10-19 | 2010-06-25 | 薄膜蒸着装置 |
| US12/907,396 US8876975B2 (en) | 2009-10-19 | 2010-10-19 | Thin film deposition apparatus |
| US14/054,536 US9224591B2 (en) | 2009-10-19 | 2013-10-15 | Method of depositing a thin film |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020090099314 | 2009-10-19 | ||
| KR20090099314 | 2009-10-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20110043396A KR20110043396A (ko) | 2011-04-27 |
| KR101097334B1 true KR101097334B1 (ko) | 2011-12-23 |
Family
ID=44048677
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020100014277A KR101097334B1 (ko) | 2009-10-19 | 2010-02-17 | 박막 증착 장치 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP5352536B2 (ja) |
| KR (1) | KR101097334B1 (ja) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101826068B1 (ko) * | 2011-07-04 | 2018-02-07 | 삼성디스플레이 주식회사 | 유기층 증착 장치 |
| KR101252756B1 (ko) * | 2011-08-08 | 2013-04-09 | 공주대학교 산학협력단 | 복수의 증발특성을 갖는 점증발원의 노즐 |
| JP5812753B2 (ja) * | 2011-08-11 | 2015-11-17 | 株式会社アルバック | 成膜装置及び成膜方法 |
| KR102120895B1 (ko) * | 2013-08-09 | 2020-06-10 | 삼성디스플레이 주식회사 | 증착장치, 이를 이용한 유기발광 디스플레이 장치 제조 방법 및 유기발광 디스플레이 장치 |
| CN104298069B (zh) * | 2014-10-13 | 2016-03-02 | 京东方科技集团股份有限公司 | 一种掩膜框架、掩膜板及其制作方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003321767A (ja) | 2002-04-26 | 2003-11-14 | Seiko Epson Corp | 薄膜の蒸着方法、有機エレクトロルミネッセンス装置、有機エレクトロルミネッセンス装置の製造方法及び電子機器 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002075638A (ja) * | 2000-08-29 | 2002-03-15 | Nec Corp | マスク蒸着方法及び蒸着装置 |
| JP4072422B2 (ja) * | 2002-11-22 | 2008-04-09 | 三星エスディアイ株式会社 | 蒸着用マスク構造体とその製造方法、及びこれを用いた有機ｅｌ素子の製造方法 |
| JP2004349101A (ja) * | 2003-05-22 | 2004-12-09 | Seiko Epson Corp | 膜形成方法、膜形成装置、有機エレクトロルミネッセンス装置の製造方法、有機エレクトロルミネッセンス装置 |
| JP2005174843A (ja) * | 2003-12-15 | 2005-06-30 | Sony Corp | 蒸着用マスクおよびその製造方法 |
| JP2006210038A (ja) * | 2005-01-26 | 2006-08-10 | Seiko Epson Corp | マスクの製造方法 |
| KR100980729B1 (ko) * | 2006-07-03 | 2010-09-07 | 주식회사 야스 | 증착 공정용 다중 노즐 증발원 |
-
2010
- 2010-02-17 KR KR1020100014277A patent/KR101097334B1/ko active IP Right Grant
- 2010-06-25 JP JP2010145075A patent/JP5352536B2/ja active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003321767A (ja) | 2002-04-26 | 2003-11-14 | Seiko Epson Corp | 薄膜の蒸着方法、有機エレクトロルミネッセンス装置、有機エレクトロルミネッセンス装置の製造方法及び電子機器 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2011084807A (ja) | 2011-04-28 |
| KR20110043396A (ko) | 2011-04-27 |
| JP5352536B2 (ja) | 2013-11-27 |
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