KR101088914B1 - Manufacturing of thin film solar cell by porous materials and solar cell - Google Patents

Abstract

Disclosed are a method of manufacturing a solar cell and a solar cell according thereto. The method of manufacturing a solar cell according to an embodiment of the present invention reduces the amount of silicon used as thin film silicon instead of a conventional silicon wafer, thereby reducing the concern about the shortage of raw materials of the solar cell and lowering the manufacturing cost. In addition, the method of manufacturing a solar cell according to an embodiment of the present invention increases the production efficiency of the solar cell by manufacturing polycrystalline silicon by depositing polycrystalline silicon or heat-treating amorphous silicon at 500 ° C. or more. Substrates that can withstand high temperature processes are used to obtain polycrystalline silicon. The etchant or the etching gas passes through the pores of the porous substrate to remove the sacrificial layer, and the porous substrate is easily lifted off from the solar cell structure. The porous substrate may be used not only for polycrystalline silicon but also for manufacturing compound semiconductors such as CIS (CuInSe ₂ ), CdTe, GaAs, InP, Ge, dye-sensitized or organic thin film solar cells.

Description

Manufacturing method of thin film solar cell using porous substrate and solar cell according thereto {MANUFACTURING OF THIN FILM SOLAR CELL BY POROUS MATERIALS AND SOLAR CELL}

The present invention relates to a method for manufacturing a thin film solar cell using a porous substrate and a solar cell according thereto.

Solar cells are a key component of solar power generation that converts sunlight directly into electricity. In solar cells, electron-hole pairs are generated when sunlight having an energy larger than the energy band gap of the semiconductor is incident at the PN junction of the semiconductor.Then electron-holes are formed by the electric field formed at the PN junction. It is gathered in P layer. Therefore, photovoltaic power is generated at the PN junction, and the current flows when the load is connected to the electrodes at both ends.

Such solar cells account for more than 95% of silicon materials, but it is difficult to manufacture at US $ 1 per watt, which is the price target for solar cells due to the shortage of silicon materials.

The solar cell of the silicon material can be classified into three types according to the manufacturing method.

First, there is a manufacturing method of a solar cell using a single crystal silicon wafer. This method can achieve 20% photovoltaics (PV) efficiency, but it is difficult to reduce production costs due to the expensive silicon consumption.

Secondly, there is a method of manufacturing a solar cell using a polycrystalline silicon wafer. This method can achieve PV efficiencies as high as 15%, but there are significant difficulties in reducing silicon consumption with current manufacturing processes. In addition, the use of silicon wafers is difficult to reduce costs due to the shortage of future supply. Generally, the thickness of silicon required for solar cell can be within 10㎛, but the use of silicon substrate more than 250㎛ means that 95% of silicon is not helpful for solar cell efficiency in order to secure safety against physical impact during manufacturing. It is used. As a result, the production cost of solar cells is affected by more than 10% by the amount of silicon used.

Third, there is a manufacturing method of a solar cell using thin film silicon. This method is known to have the lowest production cost. There are two methods of forming amorphous silicon and polycrystalline silicon from a silicon thin film. Amorphous thin-film silicon solar cells have the advantages of low-cost production and large-area manufacturing, but there are many parts where the atomic bonds are not satisfied inside the amorphous material, and due to deterioration phenomena that are lost by conversion to thermal energy, the stabilization efficiency is not practical. Energy conversion efficiency is very low. On the other hand, polycrystalline thin film silicon solar cells include microcrystalline silicon (μc-Si) and crystalline silicon (c-Si), which are boundary materials between amorphous and single crystal silicon. Polycrystalline thin-film silicon solar cells have good energy conversion efficiency because they do not exhibit degradation in amorphous thin-film silicon solar cells.

Polycrystalline thin-film silicon solar cell having such advantages has many limitations in using glass substrates because it is advantageous to apply a high temperature process in forming a polycrystalline thin film, and it is economical to use expensive substrates such as quartz substrates. This follows. The present invention introduces a high efficiency polycrystalline thin film silicon solar cell that solves these problems.

Monocrystalline and polycrystalline wafer silicon solar cells have good photoelectric conversion efficiency, but they are a problem due to high manufacturing cost and lack of raw materials.Amorphous thin film silicon solar cells have low manufacturing cost but low photoelectric conversion efficiency and deterioration due to deterioration. There is. Therefore, if you want to implement a high efficiency solar cell at low cost by taking advantage of each advantage, polycrystalline thin film silicon solar cell is most appropriate. Such solar cells have a problem in selecting a substrate suitable for a high temperature process when implementing polycrystalline thin film silicon. In an embodiment of the present invention, a porous substrate and a sacrificial layer are used, and a lift-off process is used to enable a high temperature process.

One embodiment of the present invention is a method of manufacturing a solar cell using a porous substrate that is less change in physical properties in high temperature and chemical environment, easy to separate after silicon deposition, and repeatedly reused a number of times to form polycrystalline silicon and It provides a solar cell accordingly.

An embodiment of the present invention is to form a silicon in a thin film form to manufacture a solar cell with a minimum amount of polycrystalline silicon to be affected by the problem of silicon raw material shortage, the manufacturing cost of the solar cell and the solar cell accordingly To provide.

In one embodiment of the present invention, a method of manufacturing a solar cell includes preparing a porous substrate, forming a sacrificial layer to form a sacrificial layer on the surface of the porous substrate, forming a protective film to form a protective film on the sacrificial layer, and a polycrystalline silicon thin film solar cell. Forming a solar cell, forming a substrate for attaching material, forming a substrate, step of removing the sacrificial layer and consists of a porous substrate separation step of separating the solar cell and the porous substrate.

However, the protective film may not be formed depending on the structure.

Porous substrates have excellent thermal properties, enabling high temperature processes in forming polycrystalline silicon thin films. In addition, the etchant or the etching gas may pass through the pores of the porous substrate to etch the sacrificial layer to separate the solar cell and the porous substrate (Lift-off).

According to an embodiment of the present invention, by using a substrate made of a porous ceramic material or a substrate having a similar property to withstand high temperature and chemical reaction, a high temperature process is possible to form a polycrystalline silicon thin film having excellent properties. Manufacturing a polycrystalline silicon thin film solar cell directly on a substrate of glass, plastic, etc., which is generally used, has many problems in thermal budget to realize a high temperature process. However, porous substrates are capable of high temperature processes to form polycrystalline silicon.

In addition, by separating the porous substrate and the solar cell by a lift-off process, it is possible to transfer the solar cell to a variety of substrates, such as low-cost glass substrate, plastic film, flexible film (flexible film).

In addition, one embodiment of the present invention can be repeatedly reused low-cost porous substrate can significantly reduce the manufacturing cost.

1 is a cross-sectional view of the basic structure of a solar cell according to an embodiment of the present invention.

As shown in FIG. 1, a method of manufacturing a solar cell according to an embodiment of the present invention includes preparing a porous substrate 11, forming a sacrificial layer 12, forming a protective film 13, and a solar cell. (19) forming step, forming substrate attaching material (17) and attaching substrate (18).

The solar cell forming step includes forming the first electrode 14, forming the polycrystalline thin film silicon 15, and forming the second electrode 16. In this case, the forming of the passivation layer 13 may be omitted. Each of these steps is described in more detail below.

The first electrode 14, the polycrystalline thin film silicon 15, and the second electrode 16 are defined as a solar cell 19, and the protective layer 13, the solar cell 19, and a substrate bonding material ( 17 and the substrate 18 are again defined as the solar cell structure 20.

2 is a cross-sectional view showing a method of separating a porous substrate and a solar cell according to an embodiment of the present invention.

As shown in FIG. 2, the sacrificial layer 12 is removed by allowing the etching liquid or the etching gas to pass through the pores of the porous substrate 11. Therefore, the porous substrate 11 and the solar cell structure 20 are easily separated from each other.

3 is a basic structure according to another embodiment of the present invention.

As shown in FIG. 3, in the method of manufacturing a solar cell according to another exemplary embodiment of the present invention, after the sacrificial layer 102 and the protective film 103 are sequentially formed on the porous substrate 101, the first electrode of FIG. The polycrystalline thin film silicon 105 is formed without the electrode 14 formed. Next, a second electrode (upper electrode) 106 is formed. A substrate bonding material 107 is formed on the second electrode 106, and a substrate 108 is attached on the substrate bonding material 107.

Herein, the polycrystalline thin film silicon 105 and the second electrode 106 are defined as a solar cell 109 having no first electrode, and the protective film 103, the solar cell 109, and the substrate bonding material 107. And the substrate 108 again as the solar cell structure 110.

4 is a schematic diagram of separating the porous substrate 101 and the solar cell structure 110 without the first electrode in the structure of FIG.

As shown in FIG. 4, the etching solution or the etching gas passes through the pores of the porous substrate 101, and the sacrificial layer 102 is removed. Thus, the solar cell structure 110 and the porous substrate 101 without the first electrode are separated from each other.

After the porous substrate 101 and the solar cell structure 110 without the first electrode are separated from each other, the first electrode is formed so that the first electrode 14 (see FIG. 1) is heated at a high temperature of about 500 ° C. or higher. It is prevented from being deteriorated and damaged.

FIG. 5 is a cross-sectional view of a solar cell completed by depositing a first electrode after forming a pattern on the protective film in the schematic diagram of FIG. 4.

As shown in FIG. 5, a pattern is formed on the passivation layer 103, and a first electrode 104 is formed on the P layer 105a exposed through the pattern. As such, since the first electrode 104 is manufactured last, the first electrode 104 is not exposed to a high temperature process of approximately 500 ° C. or more.

6 is a cross-sectional view of a solar cell completed by separating a porous substrate and a solar cell structure having no first electrode in the structure of FIG. 3 and forming a first electrode.

As shown in FIG. 6, after the protective film 103 shown in FIG. 3 is not formed or all of the protective film 103 is removed, metal is deposited directly on the P layer 105a, whereby the first electrode 104 'is deposited. ) May be formed. Similarly, since the first electrode 104 'is manufactured last, the first electrode 104' is not exposed to a high temperature process of approximately 500 ° C or more. Therefore, physical and electrical damage of the first electrode can be minimized.

Hereinafter, the material, the formation method and the characteristics of each of the above-described components will be described in more detail.

The porous substrate 11 is in the form of a substantially flat plate. Here, the porous substrate 11 may be a ceramic or equivalent thereof. More specifically, the porous substrate 11 is alumina (Al ₂ O ₃ ), aluminum nitride (AlN), zirconium oxide (ZrO ₂ ), magnesium oxide (MgO), silicon carbon (SiC), silicon (Si), Any one selected from carbon (C), boron carbide (B ₄ C), boron nitride (BN) and equivalents thereof, or a compound thereof

In addition, the porous substrate 11 may be made of a metal having a small change in physical properties at a temperature of at least 500 ° C. and having a plurality of pores (holes) having little reaction to an etching solution or an etching gas.

In addition, the porous substrate is a ceramic 21 and a ceramic spray formed thereon having a porosity of about 0.1% to 10% of the total volume in a range capable of controlling porosity and maintaining physical resistance as shown in FIG. 7. It may be made of a coating layer (22). Porosity is optimized according to the etchant and the etch rate. This allows the etching liquid or the etching gas to easily pass through the ceramic 21, which is the lower region of the porous substrate, and the ceramic spray coating layer 22, which is the upper region of the porous substrate, has a relatively smooth surface, so that the sacrificial layer 12 is well formed. Can be deposited.

In addition, the porous substrate 11 may be formed by coating a ceramic sprayed layer having a plurality of pores on a porous ceramic or a porous metal.

In addition, the porous substrate may be formed by forming a ceramic thermal spray coating layer 24 having a plurality of pores on the porous hole processing substrate 23, which is a corrosion resistant material having a plurality of holes formed therein, as shown in FIG. 8.

Porosity, porosity distribution degree, porosity size, etc. of the porous ceramic of the porous substrate 11 is not limited to a constant.

In addition, the porous substrate 11 may use, for example, a metal material such as Hastelloy-based corrosion resistant to hydrofluoric acid.

In addition, the porous substrate 11 may be any one selected from metals resistant to phosphoric acid, such as STS316 (stainless steel), titanium (Ti), and hastelloy, but the present invention is limited to these materials. It is not.

In this way, the present invention can use a thermal CVD apparatus, a PECVD apparatus, and a liquid crystal growth method (LPE, Liquid-Phase Epitaxy) in a high temperature process by using the porous substrate 11 as described above. That is, in the related art, since a solar cell is formed on a glass or plastic substrate, a low process temperature has to be applied, but the present invention solves this disadvantage.

In addition, the porous substrate 11 may have pores occupying a volume of 0.1% to 10% of the total volume. If the pores are formed in less than 0.1%, there is a problem that the etching of the sacrificial layer to be described below is not etched or the etching time is too long. In addition, when the pore is more than 10%, the mechanical strength of the porous substrate 11 is too weak to handle, it takes a long time to form the sacrificial layer, there is a problem that the uniformity (uniformity) of the sacrificial layer is reduced. In addition, the pores formed in the porous substrate 11 may have a size of 10nm to 10㎛. If the pore size is less than 10 nm, the etching solution or the etching gas is difficult to pass through the porous substrate, so that the sacrificial layer is not etched or the etching time is too long. In addition, when the pore size exceeds 10 μm, the strength of the porous substrate 11 is so weak that it is difficult to handle and the sacrificial layer penetrates into the pores, thereby causing a long time to form the sacrificial layer.

The sacrificial layer 12 is formed to a predetermined thickness on the surface of the porous substrate 11.

The sacrificial layer 12 may include a silicon oxide film (SiO ₂ ), a silicon nitride film (Si ₃ N ₄ ), a PSG (phospho-silicate glass), a BPSG (boro-phospho-silicate glass), and a BSG (boro-silicate glass). And any one selected from the equivalent may be formed by depositing. However, the material of the sacrificial layer 12 is not limited in the present invention. In addition, the sacrificial layer 12 may be formed in a furnace, thermal chemical vapor deposition (CVD), low pressure CVD (LPCVD), plasma enhanced chemical vapor deposition (PECVD), and evaporator, as is well known. It can be formed by using any one of the selected equipment.

The passivation layer 13 is formed on the surface of the sacrificial layer 12 to a predetermined thickness. The protective layer 13 serves to protect the solar cell 19 from an etchant or an etching gas when the separation process of the porous substrate 11 is performed as shown in FIG. 2. However, such a protective film 13 may not be formed.

The protective layer 13 may be any one selected from a silicon nitride film Si ₃ N ₄ , a zirconium oxide film ZrO ₂ , and an equivalent thereof. However, the material of the protective film 13 is not limited in the present invention. That is, the protective film 13 may be any material as long as the material has a characteristic of an etch preventing film that does not react with an etchant or an etching gas for etching the sacrificial layer 12. Of course, the protective film 13 may be made of a material having an excellent antireflection function when operating as a solar cell. As is well known, the passivation layer 13 also uses any one device selected from a furnace, chemical vapor deposition (CVD), low pressure CVD (LPCVD), plasma enhanced chemical vapor deposition (PECVD), and an evaporator. Can be formed. In addition, the protective layer 13 may serve as an anti-refractive coating (ARC) to prevent the reflection of sunlight in the completed solar cell.

Referring back to FIG. 1, the solar cell 19 including the first electrode 14, the polycrystalline thin film silicon 15, and the second electrode 16 is sequentially deposited on the surface of the protective film 13 and the polycrystalline thin film silicon. The high temperature process is performed to form a P layer, an I layer, and an N layer. The structure of the solar cell 19 is not limited to the structure shown in FIG. 1. For example, the I layer may be omitted. In addition, the order of the N layer, the I layer, and the P layer is possible, and the order of the N layer and the P layer is also possible.

The first electrode 14 is formed on the surface of the passivation layer 13. The first electrode 14 may be any one selected from tin dioxide (SnO ₂ ), zinc oxide (ZnO), indium tin oxide (ITO), carbon nanotubes, and equivalents thereof. It may be formed by a method such as rating. The first electrode 14 receives holes from the PIN thin film silicon 15 and outputs the holes to the outside. In addition, since the first electrode 14 should act as a passage through which sunlight is incident, it is a rule to form a transparent film having good transmittance so that the incident light is smooth. However, when the second electrode 16, the substrate bonding material 17 and the substrate 18 are made of a transparent material, the protective film 13 and the first electrode 14 may be opaque metals. However, if possible, the transparent film 13, the first electrode 14, as well as the second electrode 16, the substrate bonding material 17, and the substrate 18 may be made of a transparent material, which is advantageous for various solar cell applications. Do.

The polycrystalline thin film silicon 15 may be formed by depositing polycrystalline silicon having a P layer 15a, an I layer 15b, and an N layer 15c on the surface of the first electrode 14 and having a PIN junction. The structure of the polycrystalline thin film silicon 15 is not limited to the structure shown in FIG. 1. Therefore, in the structure of the polycrystalline thin film silicon 15, another layer may be additionally formed between the P layer and the N layer, and amorphous silicon may be added between each layer of the PIN thin film.

The other layer except for the I layer 15b of the polycrystalline thin film 15 may be formed of amorphous silicon.

Thermal Vapor Deposition (CVD), Low Pressure CVD (LPCVD), Plasma Enhanced Chemical Vapor Deposition (PECVD), Liquid Crystal Growth (LPE, Liquid-Phase Epitaxy), etc., on the surface of the first electrode 14. The polycrystalline thin film silicon 15 is deposited by adopting the following scheme.

The polycrystalline thin film silicon 15 may be formed by depositing amorphous thin film silicon by any one method selected from a high temperature crystallization method, a laser crystallization method, a metal crystallization method, and an equivalent method thereof. However, the present invention does not limit the crystallization method of the polycrystalline thin film silicon 15.

In addition, although a single PIN junction thin film structure has been described as an example, a structure in which the incident direction of solar light is reversed may be formed as a NIP structure, and a tandem or triple junction structure, which is a multilayer PIN junction thin film structure, may be formed. It is also possible to form a poly intrinsic layer thin film structure having a high efficiency layer. In addition, the silicon solar cell may use other solar materials.

In addition, the silicon thin film solar cell may be replaced with various compound semiconductor materials such as CIS (CuInSe ₂ ), CdTe, GaAs, InP, Ge, and the like.

Furthermore, the silicon thin film solar cell may be replaced with a dye-sensitized solar cell or an organic thin film solar cell.

When the solar cells 19 are both fabricated on the porous substrate 11 and the sacrificial layer 12 as described above, the substrate adhesion material 17 is formed on the surface of the solar cell 19 and the substrate 18 is attached thereto. Therefore, the phenomenon in which the solar cell is damaged by the etchant or the etching gas in the separation step of the porous substrate 11 is prevented.

The substrate bonding material 17 is formed on the surface of the second electrode 16.

The substrate bonding material 17 may be formed by attaching any one selected from an epoxy resin, a polymer, and an equivalent thereof. In addition, the substrate bonding material 17 may be a thermosetting resin or a photocurable resin. However, the material and characteristics of the substrate bonding material 17 are not limited here.

The substrate bonding material 17 and the substrate 18 may be made of a transparent material.

The substrate 18 is formed by adhering to the surface of the substrate bonding material 17. The substrate 18 may be made of any one selected from glass, metal, PET, polyimide film, plastic, and equivalents thereof. By using various kinds of substrates as described above, there is an advantage that a flexible solar cell can be easily manufactured. However, the material of the substrate 18 is not limited in the present invention.

The substrate 18 is adhered onto the substrate bonding material 17 before the hardening process of the substrate bonding material 17. Then, when the substrate bonding material 17 is photocured or thermoset, the substrate 18 is firmly attached onto the substrate bonding material 17.

The substrate 18 serves to securely attach and attach the solar cell according to the present invention to another object.

As shown in FIG. 2, the sacrificial layer 12 is removed by removing the sacrificial layer 12 formed between the porous substrate 11 and the passivation layer 13.

In addition, an etchant or an etching gas may be formed of a material that reacts to the sacrificial layer 12 and does not react to the passivation layer 13. More specifically, the etchant or the etching gas may be any one selected from hydrofluoric acid (HF), phosphoric acid and equivalents thereof, but is not limited thereto. In the case where the sacrificial layer 12 is nitride based, phosphoric acid may be used as an etching solution or an etching gas, and in the case of oxide based, hydrofluoric acid may be used.

Here, the sacrificial layer removing step to reach the sacrificial layer 12 through the pores of the porous substrate 11 to the etching solution or the etching gas in the completed structure of Figure 1, to remove the sacrificial layer 12 as shown in FIG. Then, the porous substrate 11 and the solar cell structure 20 are separated. In addition, as shown in FIG. 9, when the process is performed on a substrate made of a general metal substrate 25 and a ceramic thermal spray coating layer 26, the ceramic thermal spray coating layer, which is a part having pores in the step of removing a sacrificial layer, The etchant or the etching gas passes through to remove the sacrificial layer.

What has been described above is just one embodiment for carrying out the method for manufacturing a thin film solar cell using the porous substrate according to the present invention, the present invention is not limited to the above embodiment, as claimed in the following claims Without departing from the gist of the present invention, anyone of ordinary skill in the art will have the technical spirit of the present invention to the extent that various modifications can be made.

1 is a cross-sectional view of the basic structure of a solar cell according to an embodiment of the present invention.

2 is a schematic diagram of separating a porous substrate and a solar cell structure according to an embodiment of the present invention.

3 is a basic structure according to another embodiment of the present invention.

4 is a schematic diagram of separating a porous substrate and a solar cell structure in the structure of FIG.

FIG. 5 is a cross-sectional view of a solar cell completed by depositing a first electrode after forming a pattern on the protective film in the schematic diagram of FIG. 4.

6 is a cross-sectional view of a solar cell completed by separating the porous substrate and the solar cell structure in the structure of FIG. 3 and forming a first electrode without a pattern.

7 is a cross-sectional view of a porous substrate spray-coated on the surface of the porous ceramic substrate as one of the substrates illustrated as the porous substrate of the present invention.

8 is a cross-sectional view of a porous substrate spray-coated on the surface of the substrate processing the porous hole as one of the substrates exemplified as the porous substrate of the present invention.

9 is a cross-sectional view of a porous substrate spray-coated on a metal substrate as one of the substrates illustrated as the porous substrate of the present invention.

Claims (32)

A porous substrate preparation step of preparing a porous substrate; Forming a sacrificial layer on the porous substrate; A solar cell forming step of forming a solar cell having a thin film including a P layer and an N layer, and a first electrode and a second electrode on the sacrificial layer; Forming a substrate bonding material to form a substrate bonding material on the solar cell; A substrate attaching step of attaching a substrate to the substrate bonding material; And, Removing the sacrificial layer with an etchant or an etching gas to remove the sacrificial layer from the solar cell structure including the solar cell, the substrate bonding material, and the substrate. Thin film solar cell manufacturing method using. A porous substrate preparation step of preparing a porous substrate; Forming a sacrificial layer on the porous substrate; Forming a solar cell having a thin film including a P layer and an N layer and a second electrode on the sacrificial layer, and having no first electrode; Forming a substrate bonding material to form a substrate bonding material on the solar cell without the first electrode; A substrate attaching step of attaching a substrate to the substrate bonding material; Removing the sacrificial layer with an etchant or an etching gas so that the porous substrate is separated from the first electrode-free solar cell structure including the solar cell without the first electrode, the substrate bonding material, and the substrate; And, And a first electrode forming step of forming the first electrode after removing the sacrificial layer. The method according to claim 1 or 2, The porous substrate preparation step A thin film solar cell manufacturing method using a porous substrate, characterized in that the porous substrate is made of a ceramic material. The method according to claim 1 or 2, The porous substrate preparation step Alumina (Al ₂ O ₃ ), aluminum nitride (AlN), zirconium oxide (ZrO ₂ ), magnesium oxide (MgO), silicon carbon (SiC), silicon (Si) and carbon (C), boron carbide (B ₄ C) A method of manufacturing a thin film solar cell using a porous substrate, characterized in that the porous substrate is made of any one selected from boron nitride (BN). The method according to claim 1 or 2, The porous substrate preparation step A method of manufacturing a thin film solar cell using a porous substrate, the method comprising a porous substrate made of a metal having a plurality of pores which do not change in physical properties at a temperature of 500 ° C. and which do not react with the etchant or etching gas. The method according to claim 1 or 2, The porous substrate preparation step Method for manufacturing a thin film solar cell using a porous substrate, characterized in that by preparing a porous substrate having pores occupying a volume of 0.1% to 10% relative to the total volume of the porous substrate. The method according to claim 1 or 2, The porous substrate preparation step A method of manufacturing a thin film solar cell using a porous substrate, characterized in that the porous ceramic substrate is prepared by preparing a porous substrate coated with a ceramic thermal spray layer having a plurality of pores. The method according to claim 1 or 2, The porous substrate preparation step A method of manufacturing a thin film solar cell using a porous substrate, comprising preparing a porous substrate coated with a ceramic thermal spray layer having a plurality of pores on a metal having a plurality of holes. The method according to claim 1 or 2, The porous substrate preparation step A method of manufacturing a thin film solar cell using a porous substrate, wherein the porous substrate has a pore size of 10 nm to 10 μm. The method according to claim 1 or 2, The sacrificial layer forming step Silicon oxide (SiO ₂ ), zirconium oxide (ZrO ₂ ), silicon nitride (Si ₃ N ₄ ), PSG (phospho-silicate glass), BPSG (boro-phospho-silicate glass) and BSG (boro-silicate glass) Thin film solar cell manufacturing method using a porous substrate, characterized in that made by depositing any one. The method according to claim 1 or 2, After the sacrificial layer forming step, a protective film forming step of forming a protective film on the surface of the sacrificial layer is further performed, the thin film solar cell manufacturing method using a porous substrate. The method of claim 11, The protective film forming step Among silicon oxide film (SiO ₂ ), silicon nitride film (Si ₃ N ₄ ), zirconium oxide film (ZrO ₂ ), PSG (phospho-silicate glass), BPSG (boro-phospho-silicate glass) and BSG (boro-silicate glass) Thin film solar cell manufacturing method using a porous substrate, characterized in that formed by any one selected. The method of claim 1, The solar cell forming step A thin film solar cell manufacturing method using a porous substrate, characterized in that formed by forming a polycrystalline silicon film. 3. The method of claim 2, The solar cell forming step without the first electrode A thin film solar cell manufacturing method using a porous substrate, characterized in that formed by forming a polycrystalline silicon film. The method of claim 1, The solar cell forming step A method of manufacturing a thin film solar cell using a porous substrate, characterized in that a polycrystalline silicon film and an amorphous silicon film are formed. 3. The method of claim 2, The solar cell forming step without the first electrode A method of manufacturing a thin film solar cell using a porous substrate, characterized in that a polycrystalline silicon film and an amorphous silicon film are formed. The method of claim 1, The solar cell forming step A method for manufacturing a thin film solar cell using a porous substrate, wherein the amorphous thin film silicon is crystallized by a high temperature heat treatment method to form polycrystalline silicon. 3. The method of claim 2, The solar cell forming step without the first electrode A method for manufacturing a thin film solar cell using a porous substrate, wherein the amorphous thin film silicon is crystallized by a high temperature heat treatment method to form polycrystalline silicon. The method of claim 1, The solar cell forming step The silicon thin film is formed of any one selected from a furnace, a thermal CVD apparatus, an LPCVD and PECVD apparatus, an evaporator, or a porous substrate characterized in that it is formed by a liquid-phase epitaxy (LPE) method. Thin film solar cell manufacturing method using. 3. The method of claim 2, The solar cell forming step without the first electrode The silicon thin film is formed of any one selected from a furnace, a thermal CVD apparatus, an LPCVD and PECVD apparatus, an evaporator, or a porous substrate characterized in that it is formed by a liquid-phase epitaxy (LPE) method. Thin film solar cell manufacturing method using. The method according to claim 1 or 2, The solar cell is a thin-film solar cell manufacturing method using a porous substrate made of any one of a multilayer junction structure including a PN junction structure, NP junction structure, PIN junction structure, NIP junction structure, Tandem Junction and Triple (Triple) structure . The method of claim 21, The solar cell is a thin film solar cell manufacturing method using a porous substrate formed by additionally forming an amorphous silicon film on the polycrystalline silicon film. The method according to claim 1 or 2, The solar cell is a thin film solar cell manufacturing method using a porous substrate, characterized in that formed of any one compound semiconductor selected from CIS (CuInSe ₂ ), CdTe, GaAs, InP and Ge. The method according to claim 1 or 2, The solar cell is a thin film solar cell manufacturing method using a porous substrate, characterized in that any one selected from dye-sensitized or organic thin film. The method according to claim 1 or 2, The substrate bonding material forming step Method of manufacturing a thin film solar cell using a porous substrate, characterized in that the coating is made of any one of epoxy, polymer, thermosetting resin and photocurable resin. The method according to claim 1 or 2, The substrate bonding step A method of manufacturing a thin film solar cell using a porous substrate, characterized in that the attachment is made of any one selected from a glass substrate, a metal substrate, a PET substrate, a polyimide substrate, and a flexible film. The method according to claim 1 or 2, The substrate bonding step A method of manufacturing a flexible thin film solar cell using a porous substrate, wherein the flexible film is attached. The method according to claim 1 or 2, The sacrificial layer removing step A method of manufacturing a thin film solar cell using a porous substrate, characterized in that the etching solution or the etching gas is made using only the sacrificial layer. The method according to claim 1 or 2, The sacrificial layer removing step Thin film solar cell manufacturing method using a porous substrate, characterized in that made of any one selected from hydrofluoric acid and phosphoric acid. 3. The method of claim 2, After the sacrificial layer removal step of separating the porous substrate and the solar cell, a method of manufacturing a thin film solar cell using a porous substrate, characterized in that to form a first electrode on the solar cell. 3. The method of claim 2, And forming a protective film on the sacrificial layer after the sacrificial layer forming step, and after the sacrificial layer removing step of separating the porous substrate and the solar cell, forms a pattern on the protective film and forms a first electrode. Thin film solar cell manufacturing method using a porous substrate. The solar cell manufactured by the method of Claim 1 or 2.

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