KR101087243B1 - Method for restraining deformation of substrate for liquid crystal display - Google Patents

Abstract

The present invention provides a method of suppressing deformation of a substrate for a liquid crystal display device. The method of suppressing deformation of a substrate for a liquid crystal display device includes a first step of loading a substrate for a liquid crystal display device into a process chamber, a second step of supplying hydrogen or nitrogen plasma into the process chamber, and a substrate for a liquid crystal display device at a predetermined temperature. And a fourth step of mounting the substrate support to the substrate holding unit and a fourth step of supplying hydrogen or nitrogen plasma into the process chamber.

Liquid Crystal Display, Chemical Vapor Deposition, Substrate Deformation

Description

Method for restraining deformation of substrate for liquid crystal display

1A to 1C are cross-sectional views of each step of performing a plasma enhanced chemical vapor deposition process including a method of suppressing deformation of a substrate for a liquid crystal display according to an exemplary embodiment of the present invention.

2A to 2C are cross-sectional views of respective steps of performing a plasma enhanced chemical vapor deposition process including a method of suppressing deformation of a substrate for a liquid crystal display according to another exemplary embodiment of the present invention.

3A to 3C are cross-sectional views of respective steps of performing a plasma enhanced chemical vapor deposition process including a method of suppressing deformation of a substrate for a liquid crystal display according to another exemplary embodiment of the present invention.

 (Explanation of symbols for the main parts of the drawing)

100: process chamber 110: upper electrode

120: substrate for liquid crystal display 130: substrate support

140: moving part of substrate support 150: moving part of support pin

151: support pin

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of suppressing deformation of a substrate for a liquid crystal display (LCD), and more particularly, to a liquid crystal display device by static electricity during a plasma enhanced chemical vapor deposition (PECVD) process. The present invention relates to a method of suppressing deformation of a substrate for a liquid crystal display device (LCD), which can effectively suppress deformation of the substrate for deformation.

In today's information society, the role of electronic displays has become very important, and various electronic displays have been widely used in various industrial fields. In the electronic display device field, electronic display devices having new functions suitable for the demands of the information society, which have been continuously developed and diversified, are continuously being developed. In general, an electronic display device refers to a device that transmits various pieces of information to a human through vision. That is, an electronic display device refers to an electronic device that converts an electronic information signal output from various electronic devices into an optical information signal that can be recognized by a human eye, and is a device that plays a role of a bridge between humans and electronic devices. It can be said.

In such an electronic display device, when an optical information signal is displayed by a light emitting phenomenon, it is referred to as a light emitting display device, and when it is displayed by light modulation due to reflection, scattering, or interference phenomenon, it is called a light receiving display device. Light emitting displays, also called active display devices, include cathode ray tubes (CRTs), plasma display panels (PDPs), organic electroluminescent displays (OELDs), light emitting diodes ( Light Emitting Diode (LED) etc. can be mentioned. The light receiving display device, which is called a passive display device, may include a liquid crystal display (LCD) and an electrophoretic image display (EPID).

Cathode ray tube display device, which is used for television and computer monitor, and has the longest history, has the highest market share in terms of economy, but has many disadvantages such as heavy weight, large volume and high power consumption. .

Recently, due to the rapid progress of semiconductor technology, there is a demand for a flat panel display device as an electronic display device suitable for a new environment in accordance with the trend of lowering and lowering power of various electronic devices and miniaturization, thinning, and lightening of electronic devices. It is rapidly increasing. Accordingly, flat panel display devices such as a liquid crystal display (LCD), a plasma display device (PDP), an organic EL display device (OELD), and the like have been developed, and among these flat panel display devices, it is easy to miniaturize, light weight, and thinner. In particular, liquid crystal display devices having low power consumption and low driving voltage are drawing attention.

In the liquid crystal display, a liquid crystal material having an anisotropic dielectric constant is injected between an upper transparent insulating substrate on which a common electrode, a color filter, a black matrix, and the like are formed, and a lower transparent insulating substrate on which a switching element and a pixel electrode are formed. By applying different potentials to the electrodes and the common electrode, the intensity of the electric field formed in the liquid crystal material is adjusted to change the molecular arrangement of the liquid crystal material, thereby controlling the amount of light transmitted through the transparent insulating substrate to express a desired image. It is a display device. In the liquid crystal display, a thin film transistor liquid crystal display (TFT LCD) using a thin film transistor (TFT) element as a switching element is mainly used.

On the other hand, the thin film transistor liquid crystal display device uses a plasma enhanced chemical vapor deposition (PECVD) process on a substrate for a liquid crystal display device, such as an insulating layer of a silicon nitride film, an active layer of amorphous silicon, and resistance of an impurity amorphous silicon. By forming a contact layer).

By the way, as the thin-film transistor liquid crystal display device becomes larger, lighter and thinner, the substrate for liquid crystal display devices gradually becomes thinner, the density thereof becomes lower, and the area thereof becomes larger. When various thin films are formed on the liquid crystal display substrate by using a plasma enhanced chemical vapor deposition process, the phenomenon of deformation of the liquid crystal display substrate becomes prominent due to stress such as static electricity in the plasma enhanced chemical vapor deposition process chamber. . When plasma enhanced chemical vapor deposition is performed in a state where the liquid crystal display substrate is deformed, the deposition rate of various thin films deposited on the liquid crystal display substrate is decreased, and the film quality of the thin film is degraded. In particular, such a problem is seriously induced as the area of the liquid crystal display substrate increases.

Accordingly, the present invention provides a liquid crystal display (LCD) which can effectively suppress the deformation of the liquid crystal display substrate due to static electricity during the plasma enhanced chemical vapor deposition (PECVD) process. It is to provide a method of suppressing deformation of a substrate for use.

The technical objects to be achieved by the present invention are not limited to the technical matters mentioned above, and other technical subjects which are not mentioned can be clearly understood by those skilled in the art from the following description. There will be.

According to an aspect of the present invention, there is provided a method of suppressing deformation of a substrate for a liquid crystal display device, the method including loading a substrate for a liquid crystal display device into a process chamber, and hydrogen or nitrogen plasma in the process chamber. And a third step of mounting the substrate for the liquid crystal display device to a substrate support maintained at a predetermined temperature, wherein the second step is a process for removing static electricity remaining in the chamber. And supplying the hydrogen or nitrogen plasma for 10 sec to 60 sec.

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According to another aspect of the present invention, there is provided a method of suppressing deformation of a substrate for a liquid crystal display device, the method including: loading a substrate for a liquid crystal display device into a process chamber; And a third step of mounting the substrate support maintained at a temperature and a third step of supplying hydrogen or nitrogen plasma into the process chamber, wherein the third step is a process for removing static electricity remaining in the chamber. And supplying the hydrogen or nitrogen plasma for 10 sec to 60 sec.

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According to another aspect of the present invention, there is provided a method of suppressing deformation of a substrate for a liquid crystal display device, the method including loading a substrate for a liquid crystal display device into a process chamber, and hydrogen or nitrogen in the process chamber. A second step of supplying a plasma, a third step of mounting the liquid crystal display substrate on a substrate support portion maintained at a predetermined temperature, and a fourth step of supplying hydrogen or nitrogen plasma into the process chamber. It is done.

In addition, in the method for suppressing deformation of the liquid crystal display substrate according to another embodiment of the present invention, the hydrogen or nitrogen plasma is preferably supplied for 10 sec to 60 sec in the second step.

In addition, in the fourth step, the deformation suppression method of the substrate for a liquid crystal display device according to another embodiment of the present invention, the hydrogen or nitrogen plasma is preferably supplied for 10 sec to 60 sec.

Specific details of other embodiments are included in the detailed description and the drawings. Advantages and features of the present invention and methods for achieving them will be apparent with reference to the embodiments described below in detail with the accompanying drawings. Like reference numerals refer to like elements throughout.

A method of suppressing deformation of a substrate for a liquid crystal display according to an exemplary embodiment of the present invention will be described with reference to FIGS. 1A to 1C. 1A to 1C are cross-sectional views of each step of performing a plasma enhanced chemical vapor deposition process including a method of suppressing deformation of a substrate for a liquid crystal display according to an exemplary embodiment of the present invention.

First, when the substrate 120 for the liquid crystal display is loaded into the plasma enhanced chemical vapor deposition process chamber 100 to perform the plasma enhanced chemical vapor deposition process, as shown in FIG. The substrate 120 is seated on top of the support pin 151. Here, the liquid crystal display substrate 120 is loaded into the plasma enhanced chemical vapor deposition process chamber 100 while maintaining a room temperature (about 25 ° C.).

Next, immediately after the liquid crystal display substrate 120 is loaded into the plasma enhanced chemical vapor deposition process chamber 100, the hydrogen or nitrogen plasma 161 is placed in the plasma enhanced chemical vapor deposition process chamber 100. Feed for sec to 60 sec. As a result, the static electricity remaining in the plasma enhanced chemical vapor deposition process chamber 100 may be effectively removed. Here, the hydrogen or nitrogen plasma 161 has a ground voltage source connected to the substrate support 130, a radio frequency (RF) voltage source connected to the upper electrode 110, and hydrogen or hydrogen through the upper electrode 110. As the nitrogen gas is injected, it may be supplied between the upper electrode 110 and the substrate support 130, as shown in FIG. 1A.

Next, the moving pin 150 of the support pin 151 is driven to move the support pin 151 downward. As a result, as shown in FIG. 1B, the liquid crystal display substrate 120 is mounted to the substrate support 130 maintained at 250 ° C. to 400 ° C. FIG. Mounting the liquid crystal display substrate 120 to the substrate support 130 maintained at 250 ° C to 400 ° C may be performed on the upper portion of the liquid crystal display substrate 120 using a plasma enhanced chemical vapor deposition process in a subsequent step. Pre-heating process for preheating the substrate 120 for liquid crystal display device to effectively deposit various thin films such as an insulating layer of a silicon nitride film, an active layer of amorphous silicon, and an ohmic contact layer of impurity amorphous silicon. To do.

Here, the liquid crystal display substrate 120 is maintained at a room temperature of about 25 ° C., loaded into the plasma enhanced chemical vapor deposition process chamber 100, and then mounted on the substrate support 130 maintained at 250 ° C. to 400 ° C. Therefore, a sudden heat transfer occurs from the substrate support 130 to the liquid crystal display substrate 120, and at this time, the liquid crystal display substrate 120 due to thermal stress applied to the liquid crystal display substrate 120. The deformation of is transmitted in the horizontal direction and solved.

However, when static electricity remains in the plasma enhanced chemical vapor deposition process chamber 100, the liquid crystal display device substrate 120 and the substrate support part 130 are strongly adhered to each other due to the attraction force due to static electricity. Since the deformation of the 120 is not transmitted in the horizontal direction but in the vertical direction, the deformation of the substrate 120 for the liquid crystal display is further intensified. When plasma enhanced chemical vapor deposition is performed in a state where the deformation of the liquid crystal display substrate 120 is deepened, the deposition rate of various thin films deposited on the liquid crystal display substrate 120 is reduced, and the film quality of the thin film is reduced. The property is deteriorated.                     

In the method for suppressing deformation of the liquid crystal display substrate 120 according to the exemplary embodiment of the present invention, immediately after the liquid crystal display substrate 120 is loaded into the plasma enhanced chemical vapor deposition process chamber 100, the plasma enhanced By supplying the hydrogen or nitrogen plasma 161 into the chemical vapor deposition process chamber 100 for 10 sec to 60 sec, as described above, the static electricity remaining inside the plasma enhanced chemical vapor deposition process chamber 100 can be efficiently removed. As such, the deformation of the liquid crystal display substrate 120 due to the thermal stress applied to the liquid crystal display substrate 120 may be transmitted in the horizontal direction and effectively eliminated.

Next, as shown in FIG. 1C, the gap between the upper electrode 110 and the substrate support 130 is adjusted by moving the substrate support 130 by driving the moving unit 140 of the substrate support 130. The plasma 163 of the reaction gas is provided between the electrode 110 and the substrate support 130 to perform a plasma enhanced chemical vapor deposition process.

A method of suppressing deformation of a substrate for a liquid crystal display according to another exemplary embodiment of the present invention will be described with reference to FIGS. 2A to 2C. 2A to 2C are cross-sectional views of respective steps of performing a plasma enhanced chemical vapor deposition process including a method of suppressing deformation of a substrate for a liquid crystal display according to another exemplary embodiment of the present invention. The deformation suppression method of the liquid crystal display substrate according to another embodiment of the present invention will be described with respect to the difference between the deformation suppression method and the liquid crystal display substrate according to an embodiment of the present invention.

First, when the liquid crystal display substrate 120 is loaded into the plasma enhanced chemical vapor deposition process chamber 100, as shown in FIG. 2A, the liquid crystal display substrate 120 is disposed on the support pin 151. It is seated.

Next, the moving pin 150 of the support pin 151 is driven to move the support pin 151 downward. As a result, as shown in FIG. 2B, the liquid crystal display substrate 120 is mounted on the substrate support 130 maintained at 250 ° C. to 400 ° C. FIG.

Next, immediately after the liquid crystal display substrate 120 is mounted on the substrate support 130, hydrogen or nitrogen plasma 162 is supplied into the plasma enhanced chemical vapor deposition process chamber 100 for 10 sec to 60 sec. do. As a result, the static electricity remaining in the plasma enhanced chemical vapor deposition process chamber 100 may be effectively removed. Here, the hydrogen or nitrogen plasma 162 has a ground voltage source connected to the substrate support 130, a radio frequency (RF) voltage source connected to the upper electrode 110, and hydrogen or nitrogen through the upper electrode 110. As the nitrogen gas is injected, it may be supplied between the upper electrode 110 and the substrate support 130, as shown in FIG. 2B.

Here, the liquid crystal display substrate 120 is maintained at a room temperature of about 25 ° C., loaded into the plasma enhanced chemical vapor deposition process chamber 100, and then mounted on the substrate support 130 maintained at 250 ° C. to 400 ° C. Therefore, a sudden heat transfer occurs from the substrate support 130 to the liquid crystal display substrate 120, and at this time, the liquid crystal display substrate 120 due to thermal stress applied to the liquid crystal display substrate 120. The deformation of is transmitted in the horizontal direction and solved.

However, when static electricity remains in the plasma-enhanced chemical vapor deposition process chamber 100, as described above, the liquid crystal display is strongly adhered between the liquid crystal display substrate 120 and the substrate support 130 by the attraction force due to static electricity. Since the deformation of the device substrate 120 is not transmitted in the horizontal direction but is transmitted in the vertical direction, the deformation of the liquid crystal display substrate 120 is further intensified. When plasma enhanced chemical vapor deposition is performed in a state where the deformation of the liquid crystal display substrate 120 is deepened, the deposition rate of various thin films deposited on the liquid crystal display substrate 120 is reduced, and the film quality of the thin film is reduced. The property is deteriorated.

According to another embodiment of the present invention, a method of suppressing deformation of the liquid crystal display substrate 120 may include a plasma enhanced chemical vapor deposition process chamber immediately after the liquid crystal display substrate 120 is mounted on the substrate support 130. By supplying the hydrogen or nitrogen plasma 162 inside the 100 for 10 sec to 60 sec, the static electricity remaining in the plasma-enhanced chemical vapor deposition process chamber 100 can be efficiently removed as described above. The deformation of the liquid crystal display substrate 120 due to the thermal stress applied to the device substrate 120 may be transmitted in the horizontal direction and effectively eliminated.

Next, as illustrated in FIG. 2C, a plasma 163 of a reaction gas is provided between the upper electrode 110 and the substrate support 130 to perform a plasma enhanced chemical vapor deposition process.

A method of suppressing deformation of a substrate for a liquid crystal display according to still another exemplary embodiment of the present invention will be described with reference to FIGS. 3A to 3C. 3A to 3C are cross-sectional views of each step of performing a plasma enhanced chemical vapor deposition process including a method of suppressing deformation of a substrate for a liquid crystal display according to an exemplary embodiment of the present invention. The deformation suppression method of the liquid crystal display substrate according to still another embodiment of the present invention will be described with respect to the deformation suppression method of the liquid crystal display substrate according to another embodiment of the present invention.

First, when the liquid crystal display substrate 120 is loaded into the plasma enhanced chemical vapor deposition process chamber 100, as shown in FIG. 3A, the liquid crystal display substrate 120 is disposed on the support pin 151. It is seated.

Next, immediately after the liquid crystal display substrate 120 is loaded into the plasma enhanced chemical vapor deposition process chamber 100, the hydrogen or nitrogen plasma 161 is placed in the plasma enhanced chemical vapor deposition process chamber 100. Feed for sec to 60 sec. As a result, the static electricity remaining in the plasma enhanced chemical vapor deposition process chamber 100 may be effectively removed. Here, the hydrogen or nitrogen plasma 161 has a ground voltage source connected to the substrate support 130, a radio frequency (RF) voltage source connected to the upper electrode 110, and hydrogen or hydrogen through the upper electrode 110. As the nitrogen gas is injected, it may be supplied between the upper electrode 110 and the substrate support 130, as shown in FIG. 3A.

Next, the moving pin 150 of the support pin 151 is driven to move the support pin 151 downward. As a result, as shown in FIG. 3B, the liquid crystal display substrate 120 is mounted to the substrate support 130 maintained at 250 ° C. to 400 ° C. FIG.

Next, immediately after the liquid crystal display substrate 120 is mounted on the substrate support 130, hydrogen or nitrogen plasma 162 is supplied into the plasma enhanced chemical vapor deposition process chamber 100 for 10 sec to 60 sec. do. As a result, the static electricity remaining in the plasma enhanced chemical vapor deposition process chamber 100 may be more effectively removed. Here, the hydrogen or nitrogen plasma 162 has a ground voltage source connected to the substrate support 130, a radio frequency (RF) voltage source connected to the upper electrode 110, and hydrogen or nitrogen through the upper electrode 110. As the nitrogen gas is injected, it may be supplied between the upper electrode 110 and the substrate support 130, as shown in FIG. 3B.

According to another embodiment of the present invention, a method of suppressing deformation of the liquid crystal display substrate 120 may include a plasma immediately after the liquid crystal display substrate 120 is loaded into the plasma enhanced chemical vapor deposition process chamber 100. Hydrogen or nitrogen plasma 161 is supplied into the enhanced chemical vapor deposition process chamber 100 for 10 sec to 60 sec, and immediately after the liquid crystal display substrate 120 is mounted on the substrate support 130, the plasma enhanced By supplying the hydrogen or nitrogen plasma 162 inside the chemical vapor deposition process chamber 100 for 10 sec to 60 sec, as described above, the static electricity remaining inside the plasma enhanced chemical vapor deposition process chamber 100 is more efficient. Since it can be removed, the deformation of the liquid crystal display substrate 120 due to the thermal stress applied to the liquid crystal display substrate 120 is transmitted in the horizontal direction to make it more effective. Can be consumed.

Next, as shown in FIG. 3C, the plasma 163 of the reaction gas is provided between the upper electrode 110 and the substrate support 130 to perform a plasma enhanced chemical vapor deposition process.

Although the embodiments of the present invention have been described above with reference to the accompanying drawings, those skilled in the art may be embodied in other specific forms without changing the technical spirit or essential features of the present invention. You will understand that. Therefore, since the embodiments described above are provided to fully inform the scope of the invention to those skilled in the art, it should be understood that they are exemplary in all respects and not limited. The invention is only defined by the scope of the claims.

According to the deformation suppression method of the liquid crystal display substrate according to the embodiments of the present invention made as described above, immediately after the liquid crystal display substrate is loaded into the plasma enhanced chemical vapor deposition process chamber, the plasma enhanced chemical vapor deposition process In the plasma enhanced chemical vapor deposition process chamber by supplying hydrogen or nitrogen plasma inside the chamber or by supplying hydrogen or nitrogen plasma within the plasma enhanced chemical vapor deposition process chamber immediately after the substrate for the liquid crystal display is mounted on the substrate support. Since the remaining static electricity can be removed efficiently, the deformation of the substrate for the liquid crystal display device due to the thermal stress applied to the substrate for the liquid crystal display device can be transmitted in the horizontal direction to be effectively resolved.

Claims (9)

A first step of loading a substrate for a liquid crystal display into a process chamber; Supplying a hydrogen or nitrogen plasma into the process chamber; And A third step of mounting the substrate for the liquid crystal display device to a substrate support maintained at a predetermined temperature; The second step is a process for removing static electricity remaining in the chamber, wherein the hydrogen or nitrogen plasma is supplied for 10 sec to 60 sec, strain suppression method of a substrate for a liquid crystal display device. delete A first step of loading a substrate for a liquid crystal display into a process chamber; A second step of attaching the liquid crystal display substrate to a substrate support portion maintained at a predetermined temperature; And A third step of supplying hydrogen or nitrogen plasma into the process chamber; The third step is a step for removing static electricity remaining in the chamber, wherein the hydrogen or nitrogen plasma is supplied for 10 sec to 60 sec, strain suppression method of a substrate for a liquid crystal display device. delete A first step of loading a substrate for a liquid crystal display into a process chamber; Supplying a hydrogen or nitrogen plasma into the process chamber; A third step of attaching the liquid crystal display substrate to a substrate support maintained at a predetermined temperature; And And a fourth step of supplying hydrogen or nitrogen plasma into the process chamber. The method of claim 5, In the second step, the hydrogen or nitrogen plasma is supplied for 10 sec to 60 sec strain suppression method of the substrate for a liquid crystal display device. The method of claim 5, In the fourth step, the hydrogen or nitrogen plasma is supplied for 10 sec to 60 sec strain suppression method of the substrate for a liquid crystal display device. The method according to claim 1, 3 and 5, The hydrogen or nitrogen plasma is supplied between the upper electrode and the substrate support portion configured in the chamber, the deformation suppression method of the substrate for a liquid crystal display device. The method of claim 5, And the second and fourth steps are processes for removing static electricity remaining in the chamber.

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