KR101078316B1 - Apparatus for forming a layer on a wafer and method of cleaning a process chamber of the apparatus - Google Patents

Abstract

The film forming apparatus includes a process chamber, a cleaning gas supply part, a detection part and a cleaning part. The process chamber provides a space in which the deposition process of the organometallic compound on the wafer is performed. The cleaning gas supply unit supplies the cleaning gas to the process chamber to clean the inside of the process chamber in which the organometallic compound is deposited. The detection unit is provided on the exhaust line of the process chamber and detects the organic metal in the reaction product of the organic metal compound and the cleaning gas exhausted through the exhaust line. The control unit controls the cleaning of the process chamber according to the detection amount of the organic metal analyzed by the detection unit.

Description

Apparatus for forming a layer on a wafer and method of cleaning a process chamber of the apparatus}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film forming apparatus and a process chamber cleaning method for a film forming apparatus, and a film forming apparatus for depositing an organometallic compound on a wafer and a process chamber cleaning method for a film forming apparatus.

In general, a semiconductor device is formed by repeatedly performing processes such as photolithography, etching, diffusion, deposition, ion implantation, and cleaning for a wafer. The deposition process is for forming a film on a wafer. During the deposition process, the film is formed not only in a desired region on the wafer, but also in a process chamber in which the deposition process is performed. In particular, during the organometallic deposition process, a film containing an organometal is formed in the process chamber. The film is peeled from the process chamber to cause particle generation. The particles enter or adhere to the film on the wafer and act as a cause of defects in the semiconductor device. Therefore, it is necessary to perform a cleaning process for removing the film inside the process chamber.

In the prior art, after lowering the temperature inside the process chamber where the deposition process is completed to room temperature and evacuating until the pressure in the process chamber becomes the normal pressure, the process chamber is opened to clean the inner wall of the process chamber, and a showerhead or Parts such as stage heaters are replaced, and the process chamber is cleaned again by raising the temperature inside the process chamber and performing a purge process. Therefore, it takes a long time to clean the process chamber, the productivity of the semiconductor device manufacturing process may be lowered.

The present invention provides a film forming apparatus capable of quickly cleaning a process chamber.

The present invention provides a process chamber cleaning method capable of quickly cleaning the process chamber of the film forming apparatus.

The film forming apparatus according to the present invention comprises a process chamber which provides a space in which an organic metal compound deposition process is performed on a wafer, and a cleaning gas to the process chamber to clean the inside of the process chamber in which the organic metal compound is deposited. A detector provided on the cleaning gas supply unit to supply the exhaust gas and an exhaust line of the process chamber and detecting an organic metal in the reaction product of the organic metal compound and the cleaning gas exhausted through the exhaust line; It may include a control unit for controlling the cleaning of the process chamber in accordance with the detection amount of the organic metal.

According to one embodiment of the invention, the film forming apparatus is provided in the process chamber, a plurality of disks each supporting and rotating the wafer, and a rotating plate for revolving the wafer by supporting and rotating the disks And a transfer robot disposed at one side of the process chamber and carrying the disks from the process chamber to support the wafer on which the deposition process is completed.

According to one embodiment of the present invention, when the organic metal is not detected by the detection unit or is detected to be less than or equal to a preset amount, the controller may complete cleaning of the process chamber.

In example embodiments, the organic metal may include gallium (Ga), and the detection unit may detect the gallium.

According to one embodiment of the present invention, the cleaning gas may include chlorine (Cl).

According to one embodiment of the invention, the detection unit may be a self-plasma optical emission spectrophotometer.

The process chamber cleaning method of the film forming apparatus according to the present invention includes the steps of carrying out the wafer from which the deposition process of the organometallic compound is completed from the process chamber, and cleaning the inside of the process chamber on which the organometallic compound is deposited using a cleaning gas. And detecting the organic metal in the reaction product of the organic metal compound and the cleaning gas exhausted from the process chamber and controlling the cleaning of the process chamber according to the detection amount of the organic metal.

According to one embodiment of the present invention, the step of carrying out the wafer from the process chamber may be performed by carrying out a plurality of disks, each supporting and rotating the wafer, from the process chamber.

According to one embodiment of the present invention, when the organic metal is not detected or is detected to be less than or equal to a predetermined amount in the step of controlling the cleaning of the process chamber, cleaning of the process chamber may be completed.

According to one embodiment of the present invention, the organic metal includes gallium (Ga), the gallium may be detected in the step of detecting the organic metal.

According to one embodiment of the present invention, the cleaning gas may include chlorine (Cl).

In the film forming apparatus and the process chamber cleaning method according to the present invention, after the deposition process is completed in the process chamber, the process chamber may be cleaned in situ with the deposition process without changing the atmosphere inside the process chamber. In particular, the organic metal is detected in the reaction product with the cleaning gas exhausted from the process chamber, and the cleaning time of the process chamber is controlled according to the detection amount of the organic metal. Therefore, it is possible to minimize the time required to clean the process chamber and to improve the productivity of the semiconductor device manufacturing process using the process chamber.

Hereinafter, a film forming apparatus and a process chamber cleaning method according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. As the inventive concept allows for various changes and numerous embodiments, particular embodiments will be illustrated in the drawings and described in detail in the text. However, this is not intended to limit the present invention to the specific disclosed form, it should be understood to include all modifications, equivalents, and substitutes included in the spirit and scope of the present invention. Like reference numerals are used for like elements in describing each drawing. In the accompanying drawings, the dimensions of the structure is shown in an enlarged scale than actual for clarity of the invention.

The terms first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as the second component, and similarly, the second component may also be referred to as the first component.

The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of the invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this application, the terms "comprises", "having", and the like are used to specify that a feature, a number, a step, an operation, an element, a part or a combination thereof is described in the specification, But do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art. Terms such as those defined in the commonly used dictionaries should be construed as having meanings consistent with the meanings in the context of the related art and shall not be construed in ideal or excessively formal meanings unless expressly defined in this application. Do not.

1 is a schematic configuration diagram illustrating a film forming apparatus according to an embodiment of the present invention.

Referring to FIG. 1, the film forming apparatus 100 forms a film on the wafer 10 using a chemical vapor deposition process. For example, the film may include an organometallic compound.

The film forming apparatus 100 includes a process chamber 110, a support 120, a transfer 130, a cleaning gas supply 140, an exhaust 150, a detector 160, and a controller 170.

The process chamber 110 provides a space in which a deposition process for forming a film on the wafer 10 is performed. For example, the process chamber 110 may have a hollow cylindrical shape or a hollow box shape.

Although not shown, the process chamber 110 may be provided with a source gas supply unit for supplying a source gas for forming the film.

The process chamber 110 may include a shower head 112. The shower head 112 is disposed above the process chamber 110 and disperses gas provided to the process chamber 110. Thus, the gas is uniformly provided to the wafer 10. Examples of the gas include the source gas, a cleaning gas for cleaning, and the like.

The support part 120 is disposed below the inside of the process chamber 110 and supports the wafer 10. The support 120 includes a plurality of disks 122 and a rotating plate 124.

The disks 122 are provided to be rotatable and each support the wafer 10. Thus, the wafers 10 rotate as the disks 122 rotate. The rotating plate 124 is provided to be rotatable and supports the disks 122. As the rotation plate 124 rotates, the disks 122 revolve around the center of rotation of the rotation plate 124, and the wafers W also rotate according to the rotation of the disks 122.

Since the wafers 10 are rotated and revolved by the support part 120, the quality of a film formed on the wafer 10 may be improved.

Meanwhile, the support part 120 may simply support the wafer 10.

When the deposition process is repeatedly performed, process by-products of the deposition process may be deposited in the process chamber 110 and the support 120. When the deposition process is an organometallic chemical vapor deposition process, the process byproduct may include an organometallic.

The transfer unit 130 is disposed on one side of the process chamber 110, and carries out the wafer 10 from which the deposition process is completed, from the process chamber 110. The transfer unit 130 includes a transfer chamber 132 and a transfer robot 134.

The transfer chamber 132 is provided at one side of the process chamber 110. The process chamber 110 is provided with a gate 114 for connection with the transfer chamber 132. The process chamber 110 and the transfer chamber 132 are connected through the gate 114.

The transfer arm 134 is disposed inside the transfer chamber 132 and carries out the wafer 10 from the process chamber 110. At this time, the wafer 10 is carried out in a heated state by the deposition process. In addition, the transfer arm 134 transports the disks 122 supporting the wafer 10 to carry out the wafer 10. Since the wafer 10 in a high temperature state can be taken out without cooling and a plurality of wafers 10 can be taken out at one time, the time required for carrying out the wafer 10 can be reduced.

Process by-products remaining on the surfaces of the disks 122 may be removed by a separate cleaning process in a state in which the disk 122 is carried out of the process chamber 110.

On the other hand, the rotating plate 124 is large and difficult to be carried out to the outside through the gate 114.

The cleaning gas supply unit 140 is connected to an upper portion of the process chamber 110 and provides a cleaning gas into the process chamber 110. The cleaning gas supply unit 140 includes a cleaning gas supply source 142, a carrier gas supply source 144, a supply line 146, and a first valve 148.

The cleaning gas source 142 stores a cleaning gas for removing process by-products inside the process chamber 110. Examples of the cleaning gas include chlorine-containing gas, fluorine-containing gas, and the like.

The carrier gas source 144 stores a carrier gas for delivering the cleaning gas. Examples of the carrier gas include nitrogen gas, helium gas, argon gas, and the like.

The supply line 146 connects the cleaning gas supply source 142 and the carrier gas supply source 144 with the process chamber 110.

The first valve 148 is provided on the supply line 146 to block the supply line 146 or to adjust the amount of cleaning gas provided through the supply line 146.

The cleaning gas provided by the cleaning gas supply unit 140 reacts with the process by-products in the process chamber 110 to remove the process by-products from the process chamber 110. In addition, the process chamber 110 may be cleaned using the cleaning gas without changing the internal atmosphere of the process chamber 110 in which the deposition process is completed.

The exhaust unit 150 exhausts the gas in the process chamber 110 to the outside. The gas may be a reaction product of the deposition process or a reaction product of the cleaning process.

The exhaust unit 150 includes a vacuum pump 151, an exhaust line 152, a second valve 153, a trap 154, a bypass line 155, and a third valve 156.

The vacuum pump 151 exhausts the gas from the process chamber 110 through a pumping operation. The exhaust line 152 connects the process chamber 110 and the vacuum pump 151. The second valve 153 and the trap 154 are sequentially provided on the exhaust line 152. The second valve 153 blocks the exhaust line 152 or adjusts the amount of the gas exhausted through the exhaust line 152. The trap 154 traps material contained in the gas exhausted through the exhaust line 152. For example, the material may be an organic metal. Examples of the organic metal include gallium.

The bypass line 155 branches from the exhaust line 152 in front of the second valve 153 and is connected to the exhaust line 152 between the trap 154 and the vacuum pump 151. The third valve 156 is provided on the bypass line 155 to block the bypass line 155 or to control the amount of the gas exhausted through the bypass line 155.

The detection unit 160 is provided on the bypass line 155 and detects the process by-product from the reaction by-product of the process by-product and the cleaning gas. When the process byproduct is an organometallic compound, the detector 160 detects the organometallic in the reaction product. Examples of the organic metal include gallium.

An example of the detection unit 160 may be a self plasma optical emission spectrometer (SPOES). The SPOES generates a plasma to excite the reaction product and then detect the organometallic.

The controller 170 is connected to the detector 160 and receives the detection result of the detector 160. In addition, the controller 170 is connected to the cleaning gas supply unit 140 to control the cleaning gas supply of the cleaning gas supply unit 140. Therefore, the controller 170 controls the cleaning of the process chamber 110 according to the detection amount of the process by-products, in particular, the organic metal, detected by the detector 160.

For example, when the organic metal is detected by the detector 160 in excess of a preset reference amount, the controller 170 controls the cleaning gas supply unit 140 to supply the cleaning gas to the process chamber 110. Supply continuously. When the organic metal is not detected by the detection unit 160 or is detected to be less than or equal to the reference amount, the controller 170 stops the supply of the cleaning gas to complete cleaning of the process chamber 110.

The film forming apparatus 100 may clean the inside of the process chamber 110 in situ with the deposition process without changing the atmosphere inside the process chamber 110 after the deposition process is completed in the process chamber 110. Can be. In addition, the film forming apparatus 100 may accurately check the cleaning end point of the process chamber 110 using the detection unit 160.

2 is a flowchart illustrating a process chamber cleaning method of a film forming apparatus according to an embodiment of the present invention.

Referring to FIG. 2, a deposition process is performed while a wafer is placed in a process chamber to form a film on the wafer. When the deposition process is repeatedly performed in the process chamber, process byproducts of the deposition process are formed inside the process chamber. When the deposition process is an organometallic chemical vapor deposition process, the process byproduct may include an organometallic compound.

In order to remove the process byproducts, the wafer on which the deposition process is completed is carried out from the process chamber (S110).

The wafer is carried out in a heated state by the deposition process. In addition, the wafer is carried out by carrying out disks for supporting and rotating the wafer from the process chamber. The wafer can be unloaded without cooling and a plurality of wafers can be unloaded at a time, so that the wafer can be unloaded quickly.

When the wafers are taken out, the cleaning gas is supplied into the process chamber while maintaining the atmosphere of the process chamber during the deposition process. The cleaning gas may be a chlorine-containing gas or a fluorine-containing gas. The cleaning gas may be provided into the process chamber by a carrier gas. Nitrogen gas, helium gas, argon gas, etc. are mentioned as said carrier gas.

The cleaning gas reacts with the reaction byproduct inside the process chamber to form a reaction product. The inside of the process chamber is cleaned by exhausting the reaction product to the outside of the process chamber (S120).

In the process chamber, the deposition process and the cleaning process may proceed in situ. Therefore, the time required for the cleaning process can be reduced.

Organic metal is detected in the reaction product exhausted from the process chamber (S130).

Detection of the organometal is made while the reaction product is evacuated. The detection of the organic metal may be performed at regular time intervals or continuously. Gallium is mentioned as said organic metal.

The cleaning of the process chamber is controlled according to the detection amount of the organic metal (S140).

When the organic metal is detected in excess of a predetermined reference amount, since the by-products of the process chamber are not completely removed, the cleaning gas is continuously supplied to the process chamber. When the organic metal is not detected or is detected below the reference amount, the reaction by-products of the process chamber are completely removed or almost removed, and thus the cleaning of the process chamber is completed by blocking the supply of the cleaning gas.

The process chamber cleaning method may accurately identify the cleaning end point of the process chamber by using the detection amount of the organic metal.

In the film forming apparatus and the process chamber cleaning method according to the present invention, after the deposition process is completed in the process chamber, the process chamber may be cleaned in situ with the deposition process without changing the atmosphere inside the process chamber, and the process The clean end point of the chamber can be accurately identified.

 Therefore, the operation time of the process chamber may be improved by minimizing the time required to clean the process chamber, and the productivity of the semiconductor device manufacturing process using the process chamber may be improved. In addition, the semiconductor device due to the generation of particles in the process chamber can reduce the defects.

While the foregoing has been described with reference to preferred embodiments of the present invention, those skilled in the art will be able to variously modify and change the present invention without departing from the spirit and scope of the invention as set forth in the claims below. It will be appreciated.

1 is a schematic configuration diagram illustrating a film forming apparatus according to an embodiment of the present invention.

2 is a flowchart illustrating a process chamber cleaning method of a film forming apparatus according to an embodiment of the present invention.

Explanation of symbols on the main parts of the drawings

100 film forming apparatus 110 process chamber

120: support portion 130: transfer portion

140: cleaning gas supply unit 150: exhaust unit

160 detection unit 170 control unit

10: wafer

Claims (9)

A process chamber providing a space in which the deposition process of the organometallic compound on the wafer is performed; A cleaning gas supply unit supplying a cleaning gas to the process chamber to clean the inside of the process chamber in which the organometallic compound is deposited; A detection unit provided on an exhaust line of the process chamber and detecting an organic metal in a reaction product of the organic metal compound and the cleaning gas exhausted through the exhaust line; A control unit controlling cleaning of the process chamber according to the detection amount of the organic metal analyzed by the detection unit; And And a plurality of disks provided in the process chamber and supporting and rotating the wafers, respectively. The method of claim 1, A rotating plate for revolving the wafers by supporting and rotating the disks; And And a transfer robot disposed on one side of the process chamber, for transporting the disks from the process chamber to support the wafer on which the deposition process is completed. The film forming apparatus of claim 1, wherein when the organic metal is not detected by the detection unit or is detected to be less than or equal to a predetermined amount, the control unit completes cleaning of the process chamber. The film forming apparatus of claim 1, wherein the organic metal comprises gallium (Ga), and the detection unit detects the gallium. The film forming apparatus according to claim 1, wherein the detection unit is a magnetic plasma optical emission spectrophotometer. Removing the wafer from which the deposition process of the organometallic compound is completed, from the process chamber; Cleaning the inside of the process chamber in which the organometallic compound is deposited using a cleaning gas; Detecting an organic metal in a reaction product of the organic metal compound and the cleaning gas exhausted from the process chamber; And Controlling cleaning of the process chamber in accordance with the detection amount of the organometallic, And removing the wafer from the process chamber by removing the wafer from the process chamber. delete The process chamber cleaning method according to claim 6, wherein the cleaning of the process chamber is completed when the organometallic is not detected in the controlling the cleaning of the process chamber or is detected below a predetermined amount. The process chamber cleaning method of claim 6, wherein the organic metal comprises gallium (Ga), and the gallium is detected in the detecting of the organic metal.

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