JP2007227470A - Substrate processor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To maximally prevent a metal surface from being exposed to a reaction chamber while preventing damage caused by contact between a reaction tube and a lid body. <P>SOLUTION: A substrate processor is provided with a quartz-made reaction tube 2, whose one end is opened after demarcating the reaction chamber 4 for processing a substrate 31, a heating means 42 for heating the substrate, a gas supply means for supplying a processing gas to the reaction chamber, an exhaust means 68 for exhausting an atmosphere gas in the reaction chamber, a metallic support member for supporting the reaction tube while being engaged with the opening end side of the reaction tube, and the lid body 35 for hermetically closing an opening 19 of the reaction tube while being brought into contact with the support member. The inner wall face of the reaction tube is extended in the lid body direction so as to cover a face, which is adjacent to the reaction chamber, of the support member. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus for manufacturing a semiconductor device by performing processing such as thin film generation, impurity diffusion, annealing, etching, etc. on a substrate such as a silicon wafer or a glass substrate.

  As an example of the substrate processing apparatus, there is a single-wafer type substrate processing apparatus that processes substrates one by one, and a batch type substrate processing apparatus that processes a predetermined number of substrates at a time.

  There is a vertical substrate processing apparatus as one of the batch type substrate processing apparatuses, and the vertical substrate processing apparatus includes a vertical substrate processing furnace.

  FIG. 8 shows an example of a conventional substrate processing furnace 1, which has a quartz reaction tube 2 whose upper end is closed, and a heating device 3 surrounding the reaction tube 2. The reaction tube 2 defines a reaction chamber 4, and a predetermined number of substrates (wafers 5) are stored in the reaction chamber 4 in an airtight manner while being held by a quartz substrate holder (boat 6). The wafer 5 is heated and maintained at the processing temperature by the heating device 3, and the processing pressure is maintained from the exhaust line 11 through the exhaust pipe 9 while the processing gas is introduced from the processing gas introduction line 7 through the processing gas introduction pipe 8. As a result, the wafer 5 is evacuated, and the wafer 5 is subjected to necessary processing such as formation of a thin film. Further, when the substrate processing is performed, reaction by-products adhere to the surface facing the reaction chamber 4 such as the wall surface of the reaction chamber 4. Since there is a possibility of floating inside and contaminating the wafer 5, the reaction chamber 4 is periodically subjected to a cleaning process such as a plasma cleaning process. In the figure, reference numeral 12 denotes a soaking tube provided concentrically with the heating device 3.

  The reaction tube 2 has a flange 13 at the lower end, and an outer peripheral portion of the flange 13 is placed on a metal reaction tube pedestal 14, and further between the metal flange retainer 15 and the reaction tube pedestal 14. The reaction tube 2 is fixed by holding the flange 13 and fixing the flange 13 to the reaction tube holder 14.

  The boat 6 is placed on a seal cap 17 that is a metal lid through a quartz boat support 16, and the seal cap 17 is supported so as to be lifted and lowered by a lifting device (not shown). . The seal cap 17 abuts against the flange 13 via a seal member 18 and can close the lower end opening (furnace port 19) of the reaction tube 2 in an airtight manner. Further, a seal member 74 is also provided between the flange 13 and the reaction tube cradle 14 so as to be airtightly closed.

  FIG. 9 shows the details of part C of FIG. 8, and shows a cover plate 20 made of quartz provided so as to cover a portion exposed to the reaction chamber 4 of the seal cap 17 in FIG. The boat support 16 is placed on 20. The bottom plate of the boat support 16 can also serve as the cover plate 20.

  With the support structure of the reaction tube 2 shown in FIG. 9, the metal portion is not exposed in the reaction chamber 4, so that corrosion due to reaction byproducts during the film formation process of the substrate and corrosion during the cleaning process can be avoided. .

  However, in order to store the boat 6 in the reaction chamber 4 as described above, the seal cap 17 moves up and down and closes the furnace port 19. Therefore, the seal cap 17 may come into contact with the flange 13, and the flange 13 is made of quartz, and the seal cap 17 is made of metal. There is a risk of occurrence.

  Next, FIG. 10 is a view corresponding to part C of FIG. 8 and prevents metal contact with the flange 13.

  In the structure shown in FIG. 10, the reaction tube pedestal 14 is extended to the inner diameter side, the flange 13 is completely placed, and the seal cap 17 is in contact with the lower surface of the reaction tube pedestal 14. It is. In such a structure, metal contact between the seal cap 17 and the flange 13 is avoided, but the inner end surface of the reaction tube receiver 14 is exposed in the reaction chamber 4, and the inner end surface of the reaction tube receiver 14 is exposed. However, there is a risk of corrosion due to reaction products and corrosion due to washing.

  In view of such circumstances, the present invention prevents damage due to contact between the reaction tube and the lid and prevents the metal surface from being exposed to the reaction chamber as much as possible.

  The present invention defines a reaction chamber for processing a substrate, a quartz reaction tube having one end opened, a heating means for heating the substrate, a gas supply means for supplying a processing gas to the reaction chamber, An exhaust means for exhausting the atmospheric gas in the reaction chamber; a metal support member engaged with the opening end side of the reaction tube to support the reaction tube; and an opening of the reaction tube in contact with the support member And a cover body that hermetically closes the inner surface of the reaction tube. The inner surface of the reaction tube extends in the direction of the cover body so as to cover the reaction chamber adjacent surface of the support member.

  According to the present invention, a reaction chamber for processing a substrate is defined, a quartz reaction tube having one end opened, a heating means for heating the substrate, and a gas supply means for supplying a processing gas to the reaction chamber An exhaust means for exhausting the atmospheric gas in the reaction chamber, a metal support member engaged with the open end side of the reaction tube to support the reaction tube, and the reaction tube in contact with the support member A lid that hermetically closes the opening of the reaction tube, and the inner wall surface of the reaction tube extends in the direction of the lid so as to cover the reaction chamber adjacent surface of the support member. It is possible to prevent corrosion of the support member during cleaning, due to reaction products in the substrate processing without being exposed to the chamber, and to avoid contact between the lid and the reaction tube. It exhibits excellent effects such as prevention of damage caused by contact with the reaction tube.

  The best mode for carrying out the present invention will be described below with reference to the drawings.

  First, an outline of a substrate processing apparatus to which the present invention is applied will be described with reference to FIG.

A cassette stage 23 serving as a container exchanging means for exchanging a cassette 22 serving as a substrate storage container with an external transfer device (not shown) is provided on the front side inside the casing 21, and a cassette stage 23 is provided behind the cassette stage 23. Is provided with a cassette elevator 24 as lifting means, and a cassette transporter 25 as a cassette transport means is attached to the cassette elevator 24. Further, a cassette shelf 26 as a storage means for the cassette 22 is provided on the rear side of the cassette elevator 24 and a reserve cassette shelf 27 as a cassette storage means is also provided above the cassette stage 23. A clean unit 28 including a fan and a dustproof filter is provided above the spare cassette shelf 27, and is configured to distribute clean air inside the casing 21, for example, in an area where the cassette 22 is conveyed. ing.

  A substrate processing furnace 29 is provided above the rear portion of the housing 21, and a boat 32 as a substrate holding unit for holding wafers 31 as substrates in a horizontal posture in multiple stages is provided below the substrate processing furnace 29. A boat elevator 33 is provided as an elevating means for loading and unloading the processing furnace 29, and a lid for closing the furnace port of the substrate processing furnace 29 at the tip of the elevating member 34 attached to the boat elevator 33. A seal cap 35 is attached, and the boat 32 is vertically supported by the seal cap 35. The boat 32 holds wafers 31 to be described later in a horizontal posture in multiple stages.

  Between the boat elevator 33 and the cassette shelf 26, a transfer elevator 36 is provided as an elevating means, and a wafer transfer machine 37 as a substrate transfer means is attached to the transfer elevator 36. The wafer transfer device 37 has a required number (for example, five) of substrate transfer plates 40 on which a substrate is mounted, and the substrate transfer plate 40 can be moved back and forth.

  Further, a furnace port shutter 38 as a shielding member having an opening / closing mechanism and closing the furnace port of the substrate processing furnace 29 is provided near the lower portion of the substrate processing furnace 29.

  A clean unit 30 composed of a fan and a dustproof filter is provided on the side surface of the housing 21 facing the transfer elevator 36, and the clean air sent from the clean unit 30 is sent to the wafer transfer machine 37. After passing through the region including the boat 32 and the boat elevator 33, the exhaust is exhausted to the outside of the casing 21 by an exhaust device (not shown).

The control unit 41 performs drive control of the cassette transfer device 25, the wafer transfer device 37, the boat elevator 33, and the like, and heating control of the substrate processing furnace 29.
Is done.

  Hereinafter, the operation will be described.

  The cassette 22 loaded with the wafer 31 in a vertical posture is carried into the cassette stage 23 from an external transfer device (not shown), and is rotated 90 ° on the cassette stage 23 so that the wafer 31 is in a horizontal posture. Further, the cassette 22 is transported from the cassette stage 23 to the cassette shelf 26 or the spare cassette shelf 27 by cooperation of the raising / lowering operation of the cassette elevator 24, the transverse operation, the advance / retreat operation of the cassette transporter 25, and the rotation operation. Is done.

  The cassette shelf 26 has a transfer shelf 39 in which the cassette 22 to be transferred by the wafer transfer machine 37 is stored, and the cassette 22 to which the wafer 31 is transferred is the cassette elevator 24, The cassette is transferred to the transfer shelf 39 by the cassette conveyor 25.

  When the cassette 22 is transferred to the transfer shelf 39, the wafer transfer device 37 moves the substrate transfer plate 40 forward and backward, rotates, and moves the transfer elevator 36 up and down. The wafer 31 is transferred from the mounting shelf 39 to the boat 32 in the lowered state.

  When a predetermined number of wafers 31 are transferred to the boat 32, the boat elevator 33 raises the boat 32, and the boat 32 is loaded into the substrate processing furnace 29. When the boat 32 is completely charged, the substrate processing furnace 29 is hermetically closed by the seal cap 35.

  In the substrate processing furnace 29 that is airtightly closed, the wafer 31 is heated and a processing gas is supplied into the substrate processing furnace 29 according to a selected processing recipe, and an exhaust device (not shown) is supplied from the exhaust pipe 9. Thus, the wafer 31 is processed while the atmosphere in the reaction chamber 4 is discharged.

  A vertical substrate processing furnace 29 used in the substrate processing apparatus will be described with reference to FIGS.

  A reaction tube 2 made of quartz that defines the reaction chamber 4 is provided inside a heater 42 that is a heating device (heating means), and a flange 43 is formed at the lower end of the reaction tube 2. Forms a furnace opening 19, which is hermetically closed by a seal cap 35 through a sealing member 18 such as an O-ring.

  A boat 32 is placed on the seal cap 35 via a boat support 45. The boat 32 is loaded with a required number of wafers 31 to be batch-processed in multiple stages in a horizontal posture. The heater 42 heats the wafer 31 loaded in the reaction chamber 4 to a predetermined temperature.

  The reaction chamber 4 is provided with two gas supply pipes (a first gas supply pipe 47 and a second gas supply pipe 48) as supply paths for supplying a plurality of types, here two types of processing gases.

  The first gas supply pipe 47 is provided with a liquid mass flow controller 49, which is a flow rate control device (flow rate control means), a vaporizer 51, and a first valve 52, which is an on-off valve, in order from the upstream side. A first carrier gas supply pipe 53 for supplying a carrier gas is joined downstream, and the first carrier gas supply pipe 53 has a second mass flow controller 54 as a flow rate control device (flow rate control means) in order from the upstream, and A third valve 55 that is an on-off valve is provided. A first nozzle 56 is provided at the tip of the first gas supply pipe 47 along the inner wall of the reaction pipe 2 from the lower part to the upper part, and gas is supplied to the side surface of the first nozzle 56. A first gas supply hole 57 is provided. The first gas supply holes 57 are provided at an equal pitch from the lower part to the upper part, and have the same opening area.

  The second gas supply pipe 48 is provided with a first mass flow controller 58 as a flow rate control device (flow rate control means) and a second valve 59 as an on-off valve in order from the upstream direction, and a carrier is provided downstream of the second valve 59. A second carrier gas supply pipe 61 for supplying gas is joined. The second carrier gas supply pipe 61 is provided with a third mass flow controller 62 that is a flow rate control device (flow rate control means) and a fourth valve 63 that is an on-off valve in order from the upstream side. A second nozzle 64 is provided at the tip of the second gas supply pipe 48 in parallel with the first nozzle 56, and a second gas supply that is a supply hole for supplying gas to the side surface of the second nozzle 64. A hole 65 is provided. The second gas supply holes 65 are provided at an equal pitch from the lower part to the upper part, and have the same opening area.

  For example, when the raw material supplied from the first gas supply pipe 47 is liquid, the first gas supply pipe 47 passes through the liquid mass flow controller 49, the vaporizer 51, and the first valve 52, and The processing gas is supplied into the reaction chamber 4 through the first nozzle 56 after joining the first carrier gas supply pipe 53. For example, when the raw material supplied from the first gas supply pipe 47 is a gas, the liquid mass flow controller 49 is replaced with a gas mass flow controller, and the vaporizer 51 becomes unnecessary. The second gas supply pipe 48 merges with the second carrier gas supply pipe 61 via the first mass flow controller 58 and the second valve 59, and further enters the reaction chamber 4 via the second nozzle 64. Process gas is supplied.

  The reaction chamber 4 is connected to a vacuum pump 68 which is an exhaust device (exhaust means) through a fifth valve 67 by a gas exhaust pipe 66 for exhausting gas, and is evacuated. The fifth valve 67 is an open / close valve that can open and close the valve to evacuate and stop the evacuation of the reaction chamber 4, and can adjust the pressure by adjusting the valve opening.

  The seal cap 35 is provided with a boat rotation mechanism 69. The boat rotation mechanism 69 rotates the boat 32 in order to improve processing uniformity.

  The control unit 71 which is a control means includes the liquid mass flow controller 49, the first to third mass flow controllers 58, 54, 62, the first to fifth valves 52, 59, 55, 63, 67, the heater 42, It is connected to the vacuum pump 68, the boat rotating mechanism 69, and a boat elevating mechanism (not shown). The liquid mass flow controller 49 and the flow rate adjustment of the first to third mass flow controllers 58, 54, 62, the first Opening / closing operation of the fourth valves 52, 59, 55, 63, opening / closing and pressure adjusting operation of the fifth valve 67, temperature adjustment of the heater 42, starting and stopping of the vacuum pump 68, rotation of the boat rotating mechanism 69 The speed adjustment and the raising / lowering operation control of the boat raising / lowering mechanism are performed.

  Next, an example of a film formation process using the ALD method will be described based on an example of forming an HfO2 film using TEMAH and O3, which is one of the semiconductor device manufacturing steps.

  An ALD (Atomic Layer Deposition) method, which is one of CVD (Chemical Vapor Deposition) methods, uses reactive gases as at least two types of raw materials used for film formation under certain film formation conditions (temperature, time, etc.). This is a method in which one type is alternately supplied onto a substrate, adsorbed onto the substrate in units of one atom, and film formation is performed using a surface reaction. At this time, the film thickness is controlled by the number of cycles in which the reactive gas is supplied (for example, if the film forming speed is 1 kg / cycle, 20 cycles are performed when a 20 mm film is formed).

  In the ALD method, for example, in the case of forming an HfO2 film, a high quality film can be formed at a low temperature of 180 to 250 ° C. using TEMAH (Hf [NCH3 C2 H5] 4, tetrakismethylethylaminohafnium) and O3 (ozone). is there.

  First, as described above, the wafer 31 is loaded into the boat 32 and carried into the reaction chamber 4. After the boat 32 is carried into the reaction chamber 4, the following three steps are sequentially executed.

(Step 1)
TEMAH is passed through the first gas supply pipe 47 and carrier gas (N 2) is passed through the first carrier gas supply pipe 53. The first valve 52 of the first gas supply pipe 47, the third valve 55 of the first carrier gas supply pipe 53, and the fifth valve 67 of the gas exhaust pipe 66 are opened. The carrier gas flows from the first carrier gas supply pipe 53 and the flow rate is adjusted by the second mass flow controller 54. The TEMAH flows from the first gas supply pipe 47, is adjusted in flow rate by the liquid mass flow controller 49, is vaporized by the vaporizer 51, and is mixed with the carrier gas whose flow rate is adjusted, and the first gas supply hole 57 of the first nozzle 56 is mixed. From the gas exhaust pipe 66 while being supplied into the reaction chamber 4. At this time, the fifth valve 67 is appropriately adjusted to maintain the pressure in the reaction chamber 4 in the range of 30 to 900 Pa, for example, 200 Pa. The supply amount of TEMAH controlled by the liquid mass flow controller 49 is 0.01 to 0.7 g / min. The time for exposing the wafer 31 to the TEMAH gas is 30 to 180 seconds. At this time, the temperature of the heater 42 is set so that the temperature of the wafer 31 is in the range of 150 to 300 ° C., for example, 200 ° C. By supplying TEMAH into the reaction chamber 4, surface reaction (chemical adsorption) is performed with a surface portion such as a base film on the wafer 31.

(Step 2)
The first valve 52 of the first gas supply pipe 47 is closed, and the supply of TEMAH is stopped. At this time, the fifth valve 67 of the gas exhaust pipe 66 is kept open, and the inside of the reaction chamber 4 is evacuated to 20 Pa or less by a vacuum pump 68 to remove residual TEMAH gas from the reaction chamber 4. At this time, if an inert gas such as N2 is supplied into the reaction chamber 4, the effect of eliminating residual TEMAH gas is further enhanced.

(Step 3)
O 3 flows through the second gas supply pipe 48 and carrier gas (N 2) flows through the second carrier gas supply pipe 61. Both the second valve 59 of the second gas supply pipe 48 and the fourth valve 63 of the second carrier gas supply pipe 61 are opened. The carrier gas flows from the second carrier gas supply pipe 61 and the flow rate is adjusted by the third mass flow controller 62. O 3 flows from the second gas supply pipe 48, the flow rate of which is adjusted by the first mass flow controller 58, and the carrier gas whose flow rate is adjusted is mixed, and the reaction chamber 4 enters the reaction chamber 4 through the second gas supply hole 65 of the second nozzle 64. Is exhausted from the gas exhaust pipe 66. At this time, the fifth valve 67 is appropriately adjusted to maintain the pressure in the reaction chamber 4 in the range of 30 to 900 Pa, for example, 300 Pa. The time for exposing the wafer 31 to O3 is 10 to 120 seconds. The heater 42 is set so that the temperature of the wafer 31 at this time is in the range of 150 to 300 ° C., for example, 200 ° C., as in the supply of the TEMAH gas in step 1. By supplying O 3, TEMAH and O 3 chemically adsorbed on the surface of the wafer 31 react with each other to form a HfO 2 film on the wafer 31.

  After the film formation, the second valve 59 of the second gas supply pipe 48 and the fourth valve 63 of the second carrier gas supply pipe 61 are closed, and the inside of the reaction chamber 4 is evacuated by the vacuum pump 68. The gas after contributing to the film formation of the remaining O3 is eliminated. At this time, if an inert gas such as N2 is supplied into the reaction tube 2, the effect of removing the gas after contributing to the film formation of the remaining O3 from the reaction chamber 4 is enhanced.

  Further, steps 1 to 3 described above are defined as one cycle, and a HfO2 film having a predetermined thickness can be formed on the wafer 31 by repeating this cycle a plurality of times.

  Next, the support part of the reaction tube 2 of the substrate processing furnace 29 will be described with reference to FIGS.

  FIG. 4 shows a first example of a support portion according to the present invention, which is an enlarged view of portion B of FIG. 2, and the same reference numerals are given to the same components as shown in FIG. 9 in FIG. It is.

  A flange 13 formed at the lower end of the reaction tube 2 is placed on the reaction tube pedestal 14 and fixed to the reaction tube pedestal 14 by a flange presser 15 fixed to the reaction tube pedestal 14. Is placed and fixed on the reaction tube cradle 14.

  A lower end inner edge portion 72 of the reaction tube 2 protrudes in a tapered shape toward the seal cap 35, that is, downward, and a lower end of the lower end inner edge portion 72 substantially reaches the seal cap 35. The inner edge of the reaction tube pedestal 14 has a tapered cross section that gradually decreases in thickness so as to avoid interference with the lower edge inner edge 72. Therefore, by projecting the lower end inner edge portion 72, the inner wall surface of the reaction tube 2 extends downward and covers the inner end surface of the reaction tube receiving base 14, that is, the adjacent surface surrounding the reaction chamber 4. It has become.

  The lower surface of the inner edge of the reaction tube pedestal 14 extends to the vicinity of the inner wall of the reaction tube 2, and the peripheral portion of the seal cap 35 is in close contact with the lower surface of the reaction tube pedestal 14 via a seal member 18. It is possible.

  Thus, the seal cap 35 does not come into contact with the flange 13, but is in close contact with the reaction tube holder 14 to hermetically close the reaction chamber 4, and the inner end surface of the reaction tube holder 14 is It is covered with the lower inner edge 72 and is not exposed to the reaction chamber 4. Therefore, even if the substrate processing and the cleaning processing are performed according to the present invention, the reaction tube pedestal 14 which is a metal member is not corroded, and the metal between the seal cap 35 and the flange 13 is further removed when the boat is loaded and unloaded. The contact does not damage the flange 13.

  FIG. 5 shows a second example of the support portion according to the present invention. In the second example, the shape of the lower end inner edge portion 72 is changed, and the lower end inner edge portion 72 has a thin cylindrical shape. The lower end inner edge portion 72 is fitted into the reaction tube receiver 14 so as to cover the inner peripheral surface of the reaction tube receiver 14.

  FIG. 6 shows a third example of the support portion according to the present invention, and a lower end inner edge portion 72 having the same shape as that of the first example is formed at the lower end inner edge of the reaction tube 2. Further, a convex ring portion 73 protruding downward is formed on the outer edge of the lower surface of the flange 13. The cross section of the convex ring portion 73 is preferably rectangular and the lower surface is preferably flat, and has a sufficiently large cross section as compared to the lower end inner edge portion 72.

  Further, the position of the lower surface of the convex ring portion 73 is equal to the position of the lower end of the lower end inner edge portion 72, or preferably projects slightly downward.

  By forming the convex ring portion 73, when the reaction tube 2 is handled as a single unit at the time of assembly, maintenance, etc., the reaction tube 2 is self-supported with the flange 13 on the lower side. Since the ring portion 73 bears the weight of the reaction tube 2 and does not cause the lower end inner edge portion 72 to bear the weight of the reaction tube 2, the lower end inner edge portion 72 is prevented from being damaged when handled alone. it can.

  FIG. 7 shows a fourth example of the support portion according to the present invention, and a lower end inner edge portion 72 having the same shape as that of the second example is formed at the lower end inner edge of the reaction tube 2. Furthermore, a convex ring portion 73 that protrudes downward is formed on the outer edge portion of the lower surface of the flange 13 in the same manner as shown in the third example.

  The convex ring portion 73 has a rectangular cross section, and the lower surface is preferably a flat surface, and has a sufficiently large cross section compared to the lower end inner edge portion 72. The position of the lower surface is the same as the position of the lower end of the lower end inner edge portion 72, or preferably slightly protrudes downward, as in the third example.

  By forming the convex ring portion 73, when the reaction tube 2 is handled as a single unit at the time of assembly, maintenance, etc., the reaction tube 2 is self-supported with the flange 13 on the lower side. Since the ring portion 73 bears its own weight of the reaction tube 2, and the strength of the lower end inner edge portion 72 is small and is not easily broken, the weight of the reaction tube 2 is not burdened. Damage to the portion 72 can be prevented.

  In addition, the said lower end inner edge part 72 should just be a shape which covers the inner end surface of the said reaction tube stand 14, and is not limited to an above-described shape.

1 is a perspective view schematically showing a substrate processing apparatus according to an embodiment of the present invention. It is a schematic sectional drawing of the substrate processing furnace used for this substrate processing apparatus. It is an AA arrow line view of FIG. It is the B section enlarged view of FIG. 2 which shows the 1st example of a reaction tube support part. It is the B section enlarged view of FIG. 2 which shows the 2nd example of a reaction tube support part. It is the B section enlarged view of FIG. 2 which shows the 3rd example of a reaction tube support part. It is the B section enlarged view of FIG. 2 which shows the 4th example of a reaction tube support part. It is sectional drawing which shows the outline of the substrate processing apparatus of a prior art example. It is the C section detail drawing of FIG. 8 which shows an example of the conventional reaction tube support part. It is the C section detail drawing of FIG. 8 which shows the other example of the conventional reaction tube support part.

Explanation of symbols

2 Reaction tube 4 Reaction chamber 7 Process gas introduction line 11 Exhaust line 13 Flange 14 Reaction tube pedestal 15 Flange retainer 18 Seal member 19 Furnace port 31 Wafer 32 Boat 35 Seal cap 42 Heating device 45 Boat support table 72 Lower end inner edge 73 Convex ring

Claims (1)

  A reaction chamber for processing the substrate is defined, a quartz reaction tube having one end opened, a heating unit for heating the substrate, a gas supply unit for supplying a processing gas to the reaction chamber, An exhaust means for exhausting the atmospheric gas, a metal support member that engages with the open end of the reaction tube to support the reaction tube, and abuts the support member to hermetically close the opening of the reaction tube A substrate processing apparatus, wherein an inner wall surface of the reaction tube extends in the direction of the lid so as to cover a surface adjacent to the reaction chamber of the support member.

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