KR101075940B1 - Led chip device structure, method for manufacturing the same, and led chip device obtained by the method - Google Patents
Led chip device structure, method for manufacturing the same, and led chip device obtained by the method Download PDFInfo
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- KR101075940B1 KR101075940B1 KR1020090031936A KR20090031936A KR101075940B1 KR 101075940 B1 KR101075940 B1 KR 101075940B1 KR 1020090031936 A KR1020090031936 A KR 1020090031936A KR 20090031936 A KR20090031936 A KR 20090031936A KR 101075940 B1 KR101075940 B1 KR 101075940B1
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Abstract
According to the present invention, there is provided a diffraction grating structure having a concave-convex pitch of 300 nm or less on the surface of an LED chip element, the structure of the LED chip element and a method of manufacturing the LED chip obtained thereby An element is provided.
LED, irregularities, diffraction, nano
Description
The present invention relates to a structure of an LED chip element capable of increasing the luminous efficiency of the LED chip element, a manufacturing method thereof, and an LED chip element obtained thereby.
In order to improve the luminous efficiency of LED chip devices, methods such as chip device structure improvement, color material improvement, and substrate reflection performance have been mainly developed.
However, the development method of the surface of the LED chip device has not been developed very effective. In improving the surface of a chip element, the improvement of efficiency by raising the surface area by roughening the surface of a chip element is already generalized.
The present invention can provide a structure of a LED chip device having a high luminous flux output efficiency and a method of manufacturing the same, which are obtained by modifying a chip surface.
An object of the present invention is to design a diffraction grating structure, such as an approximately rectangular parallelepiped, a cuboid, or a cylindrical, having an uneven pitch of 300 nm or less on the surface of a wafer substrate as an LED chip element, thereby improving the light emission efficiency of the light emitted from the LED chip element. The present invention provides a structure, a method of manufacturing the same, and an LED chip device obtained thereby.
The structure of the structure of the LED chip element according to an aspect of the present invention for achieving the above object is formed on the surface of the LED chip element is a diffraction grating structure of 300 nm or less in pitch.
Preferably, the unevenness has any shape selected from the group consisting of a cube, a cube and a cylinder.
Preferably, the diffraction grating structure is formed on a GaP wafer substrate.
Preferably, the LED can be applied to a red LED of AlGaAs.
According to another aspect of the present invention, a method of manufacturing an LED chip device structure is provided.
(a) making a roll transfer mold in which a plurality of irregularities having a pitch of 300 nm or less are continuously formed;
(b) transferring the uneven shape processed on the roll transfer type surface to a plastic film to form an uneven transfer film;
(c) applying a photosensitive material such as UV-curable to the concave-convex surface of the concave-convex transfer film made in step (b), and then drying to form a layer to form a laminated film for resist;
(d) laminating the laminated film for resist made in step (c) on the wafer substrate to be an LED chip element, irradiating UV from the outside of the laminated film for resist to cure the photosensitive material, and transferring the uneven projections Peeling the film from the cured photosensitive material to form a photosensitive material cured layer having a concave-convex structure on the wafer substrate to be the LED chip element; And
(e) The uneven shape is etched to a depth of 500 nm or less on the wafer substrate to be the LED chip element on which the uneven photosensitive cured layer is formed, and after etching, the unnecessary photosensitive material is removed to form the LED chip element on the wafer substrate. Forming a diffraction grating structure having an uneven pitch of 300 nm or less.
Preferably, the uneven shape is any one selected from the group consisting of a cube, a cube and a cylinder.
Preferably, in the step (b), the plastic film is made of any one material selected from the group consisting of polyolefin, polyvinyl chloride and biaxially stretched polyethylene terephthalate.
Preferably, in step (c), the release film is coated on the surface of the photosensitive material, and the release film is peeled off before laminating on the wafer substrate in step (d).
Preferably, the step (b) is to apply the UV curable resin on the transfer film, in the state of contacting the surface of the UV curable resin coated on the transfer film in the roll transfer type, the roll transfer type and UV irradiation is performed on the opposite side of the surface of the transfer film in contact to transfer the opposite shape of the concave-convex shape to the surface of the transfer film to form an uneven transfer film.
Preferably, the UV curable resin is coated with a roll coater, a spin coater, a spray, a dipping coater, a wire bar coater, and gravure. The coating is applied using any one method selected from the group consisting of coater coating and air knife coater coating.
Preferably, the UV curable resin, 50 parts by weight of UA1 (urethane-based oligomer (average molecular weight: 7,000)), 50 parts by weight of 4EG-A (tetra ethylene glycol diacrylate (bifunctional monomer)), and photoinitiator (1 2 parts by weight of hydroxy cyclohexyl phenyl ketone).
Preferably, in step (d), the etching is performed using a reactive ion etching apparatus.
Preferably, in step (d), the unnecessary photosensitive material is removed by washing or ICP-RIE process using O2 gas.
Preferably, the photosensitive material is a polymer of negative shape or positive shape.
Preferably, the polymer is Polymer A using styrene, methyl methacrylate, ethyl acrylate, acrylic acid, glycidyl methacrylate copolymer resin.
Preferably, the photosensitive material is 70 parts by weight of polymer A, 30 parts by weight of pentaerythritol tetra acrylate (monomer), 2.2 parts by weight of Irgacure 369 (initiator), N, N-tetraethyl-4, 4'-dia 2.2 parts by weight of minobenzophenone (initiator), 492 parts by weight of propylene glycol monomethyl ether (solvent), 0.1 part by weight of p-methoxyphenol (polymerization inhibitor) and 0.01 part by weight of perfluoroalkyl alkoxylate (surfactant) Include.
An LED chip device according to another aspect of the present invention is obtained by cutting a wafer substrate having a LED chip device structure obtained by the method described above to a predetermined size.
At least 300 nm in height and 300 nm in pitch formed on the surface of the roll transfer die, roughly rectangular or cubic or cylindrical, such as roughly rectangular, cubic or cylindrical, in which a plurality of concave or iron shapes are continuously arranged, It differs from the shape of the diffraction grating structure formed on the wafer substrate which becomes an LED chip element, and becomes shallower than the predetermined depth of the diffraction grating formed on the wafer substrate for LED chip element. Reactive ion etching is one of microfabrication techniques classified into dry etching.
In principle, in the reaction chamber, an electromagnetic wave or the like is applied to the etching gas to make a plasma, and at the same time, a high frequency voltage is applied to the cathode having the sample. As a result, a self bias potential is generated between the sample and the plasma, and ions and radicals in the plasma accelerate and collide in the sample direction. At this time, sputtering by ions and chemical reaction of etching gas occur simultaneously, and etching is performed at a high degree suitable for micromachining.
As the RIE etching gas, based on tetrafluorocarbon CF 4 , H 2 , which is easy to react with fluorine and whose reaction product is expected to be volatile or easily desorbed, is added, and the flow rate of H 2 gas to CF 4 gas is added. The etching rate of each of the resist film and the SiO 2 film can be changed by changing the mixing ratio. Moreover, a general UV hardening resin can be used for the photosensitive material used as a resist material.
When the H 2 gas flow rate mixing ratio is about 30% or more with respect to the tetrafluorocarbon CF 4 of the RIE etching gas, the resist film is hardly etched. In other words, the use of a thinner resist film compared to the dielectric film serving as an etch stop mask means that the resist pattern can be accurately transferred.
In addition, the depth of the concave-convex shape etched in the SiO 2 film can be formed deeper than the depth of the concave-convex surface of the resist film.
The present invention provides a conventional photomask by laminating and UV-curing a transfer laminated film (photosensitive material coated product), which has been continuously manufactured by a roll process on a wafer substrate to be an LED chip element, onto a wafer substrate to be an LED chip element. Compared to the photo mask method, the process can be greatly shortened and a resist film for RIE processing is formed in a simple process.
RIE treatment is performed on a resist film formed on the wafer substrate to be the LED chip element, and a diffraction grating structure is formed on the surface of the wafer substrate for ELD chip element. The present invention can easily form a diffraction grating structure such as a rectangular parallelepiped, a cube, or a cylinder having an uneven pitch of 300 nm or less on a wafer substrate to be an LED chip element.
Since the diffraction grating can increase the amount of light emitted from the LED chip element as the first-order diffracted light described later, the light emission efficiency of the LED can be increased.
According to the present invention, the
The present invention will be described with reference to the drawings.
1 shows the roll transfer die 1 of the present invention. The shape may be yoga or iron, but the present description is described as a yaw shape. Since the depth and shape of the yaw also depend on the conditions of the RIE, it is necessary to set the shape in advance by experiment. Since this is not a subject of the present invention, it is omitted.
The outline process drawing until producing the
The uneven shape spin-coats an electron beam resist (ZEP520: JAPAN ZEON) on the
Next, the pattern is drawn using an Electron Beam Recorder (EBR) device. As shown in FIG. 3, dots 100 mm in diameter, 200 nm in pitch, and 100 nm in thickness were formed. This shape may be roughly a cube or a cube.
Next, the
Next, an inductively coupled plasma (ICP)
In the etching conditions, a yaw shape such as a cylinder or the like was formed on the
The ICP-
An
An electroless plating method on which the
The
The terminal of the strip | belt-shaped
3 shows the legend shape of the
The
As a result, as described above, the resist
Next, the process of making the
It is preferable that the
4 shows an apparatus for manufacturing the
In the figure, (2) shows the supplied plastic film, and (16) shows the UV curing resin supply device. This device is a device for supplying a certain amount of UV resin 3 to be applied to the
The said roll transfer die 1 is strip | belt-shaped made by Ni plating method, and becomes the speed | rate synchronized with the conveyance speed of the
The plastic film (2) is conveyed in the apparatus while the speed is controlled via the feed rate control roll (10), the UV curable resin (16) is uniformly coated on the surface of the plastic film (2) by the UV curable resin supply device (16) do. The roll transfer die 1 and the
Since the
In the present invention, the
The UV hardening resin 3 can add a photoinitiator, the monomer which has an ethylene double bond, etc. beforehand. As the photosensitive type, either a negative shape material or a positive shape material may be used.
As a coating method of the UV curable resin (3) used in the present invention, roll coater coating, spin coater coating, spray coating, dipping coater coating, wire bar coater bar coater coating, gravure coater coating, and air knife coater coating.
5 is a cross-sectional view showing an example of the
As the uneven UV-
The uneven UV
The UV hardening resin 3 can use either the negative photosensitive type material or the positive shape material which are commercially available. For example, the following components can be used.
Table 1. Composition of UV Curing Resin
(Kyoeishya, bifunctional monomer))
(Chiba specialty chemicals, brand name; Irgacure184))
The
As a polymer of the photosensitive material to apply | coat, either a commercially available negative shape material or a positive shape material can be used.
Examples of the polymer include styrene, methyl methacrylate, ethyl acrylate, acrylic acid, glycidyl methacrylate copolymer (polymer A). The molecular weight is about 35000 and the acid value is 110. Parts by weight (the same as below)
Table 2. Photosensitive Material Blend
(Chiba specialty Chemicals brand name) (initiator)
The uneven UV-
Thereby, the laminated | multilayer film for RIE resists 20 of the cross-sectional structure shown in FIG. 6 can be manufactured continuously.
The
The laminated product of the resist
BACKGROUND OF THE INVENTION Reactive ion etching (RIE) devices are used for etching devices in semiconductor manufacturing processes because high productivity can be obtained by synergistic effects of physical sputtering of ions and chemical etching of radicals.
As a mechanism of the reactive ion etching apparatus, an activated gas having a pressure of 1-100 Pa is introduced into an etching chamber evacuated, and an active gas plasma is generated in a room by plasma generation means such as high frequency, and the ion generated by separation of the active gas and Etching is done by bringing radicals to a wafer placed on an electrode. Many methods have been developed for a reactive ion etching (RIE) apparatus, such as a batch type process for processing a plurality of wafers simultaneously and a high-speed sheet type process for processing wafers one by one. 9 shows a schematic diagram of a production RIE apparatus. The vacuum chamber of the reactive ion etching apparatus includes an
Of course, it is also possible to use four to two to three chambers, depending on the purpose and size of the device. Since there is no need to do so, not only the productivity improvement by shortening of access time but also stabilization of an etching characteristic are connected.
Gas introduction into the
The equipment used in this process includes heating, corrosion resistance, and reaction products to prevent clogging of gas that is liable to be condensed at room temperature such as SiCl 4 and CCl 4 which are frequently used as RIE. In addition, these process gases and reaction products are discharged to a pump such as a
Microfabrication technology in semiconductor devices or magnetic devices generally consists of two processes: lithography technology and etching technology. Etching techniques include a wet etching method and a dry etching method using a low vacuum plasma. In general, the latter is superior to the former in the degree of processing, the anisotropic processing according to the direction of the plasma, and the adhesion between the mask and the workpiece. In particular, when reactive species (CF 4 , CCl 4, etc.) are reacted in the plasma with the surface of the workpiece, volatile reaction products CF 4 , CCl 4, etc. use halogens to generate halogen compounds. Reactive ion etching (RIE), which is etched by removing it from the surface, is widely used as a technique for realizing finer processing, and has been greatly developed as a basic technology in the microfabrication process of various semiconductor devices including silicon ultra LSI. .
As an example of micromachining, since CO gas is disproportionately decomposed into carbon single particles and carbon dioxide molecules in the plasma, it is difficult to obtain active species of CO even when plasma is converted to CO gas. The etching does not proceed because it reacts with the element to form a transition metal carbide and protects the magnetic surface. In view of the fact that ammonia gas (NH 3 ) has a function of inhibiting the decomposition of CO gas in the presence of transition metal, NH 3 gas is added to the CO gas, thereby increasing the etching rate and improving the selectivity to the magnetic metal material. I could see that. Moreover, it is known that it is effective for the micromachining of a magnetic metal material, for example, to obtain a fine line grating | lattice of a sharp shape.
CO gas and NH 3 gas are introduced in a vacuum, and they are excited at high frequency to generate plasma thereof, and a metal magnetic material is placed in the atmosphere with a thin film of the magnetic metal material of the material to be processed. Selectively etching only the material. This is also effective for fine processing of conductive materials such as gold and copper. By using a vacuum-resistant metal material with resistance to corrosion, such as titanium, in the construction of the RIE device, it is possible to prevent problems such as corrosion of the device and contamination of the workpiece, and to allow ultra-fine processing of magnetic metal materials. Lose.
In order to realize the optimum processing conditions excellent in the high aspect and high smoothness obtained from the nanostructure, a resist pattern formed by electron beam exposure or reduced projection sputtering exposure is transferred to a dielectric film such as silicon dioxide SiO 2 or silicon nitride SiN serving as an etching mask. High-precision resist pattern transfer technology that can be accurately transferred to high dimensional accuracy is also omitted. RIE using carbon fluoride gas is widely used, but the improvement of the transfer degree requires improvement of the etching rate ratio (selectivity) of the resist film and the dielectric film, and the thinning of the resist. I think it will be a point.
As the etching gas, H 2 , which is easy to react with fluorine based on tetrafluorocarbon CF 4 , is expected to be volatile or easily desorbed, and H 2 gas to CF 4 gas is added. It is also known to vary the flow rate mixing ratio to vary the etching rate of each of the resist film and the SiO 2 film. As the resist material, both negative and positive types can be used. When the H 2 gas mixture flow rate ratio is 0%, the etching rate between the SiO 2 film and the resist film is almost 1: 1, i.e., almost no selectivity, and is not very suitable for the condition that the resist pattern is transferred to the SiO 2 film with high accuracy. .
In addition, as the flow rate mixing ratio of the H 2 gas was increased, the etching rate of the resist film tended to decrease significantly, while the etching rate decrease of the SiO 2 film was less than that of the resist film, and there was no significant change. It is also known that the resist film is hardly etched when the H 2 gas flow rate mixing ratio is about 30% or more.
As a result, it is possible to use a thinner resist film as compared to the dielectric film serving as an etching mask, and thus, the resist pattern can be transferred with high precision, and the nanostructure can be transferred with a high precision resist pattern.
As a result, an excellent diffraction
In the nano-concave-convex structure, diffraction does not occur because it is an antireflection structure within the critical angle. The conditions under which the first order diffraction occurs at a wider angle than the critical angle can be estimated by the following equation.
In the diffraction grating structure as shown in Fig. 10, an appropriate unevenness interval was obtained from equation (1) of diffraction. The diffraction equation can be given as follows.
sinθ k d-n G sinθ i = kλ / m (m = 0, ± 1, ± 2) (1)
(n G : refractive index of GaP (3.2), θ i : incident angle, θ k : exit angle, λ: wavelength, d: gap of diffraction grating, k: diffraction order, diffraction order k is -1)
Table 3 shows the calculation results of the incident angles at which the
Table-3.
The diffraction did not occur when the gap between the irregularities was about 100 nm. It was found that diffraction in which the
By forming the diffraction
(Example)
As an example, an open cylindrical concave-convex shape 51 shown in Fig. 11 having a width of 100 nm, an interval of 200 nm, and a height of 100 nm was formed on the
This uneven shape 51 can also be formed by various methods, such as electron beam drawing, 3D laser exposure, and the photolithographic method.
The characteristic of this uneven shape 51 was described in the above-mentioned FIG. It is a feature of the present invention that it can be made significantly shallower than the depth of the diffraction
Mass production is possible with the film which made the resist
A conductive layer for forming an
Ni electroplating was carried out in the Ni electroforming casting 36, and the master electroforming die 29 was produced. In the Example, the thickness of the master electroforming die 29 was 200 m.
After completion of the electric pole, electric pole back
This process is repeated to produce a predetermined number of
In the embodiment of the present invention, the
An
This roll transfer die 1 is attached to an apparatus for producing the
The plastic film (2) used a PET film of the type to which
UV curable resin of the said composition is precisely supplied to the UV curable resin supply apparatus 16 on the
The applied UV cured resin 3 is further sandwiched by the gap control rolls 11a and 11b and the gap plate 15 to make the coating thickness of the UV resin 3 homogeneous.
In this state, light is irradiated with the
In order to accurately transfer the uneven shape of the roll transfer die 1, the feed rate of the feed speed control roll 10 and the take-up speed control roll 13 and the feed rate of the
According to the manufacturing method according to this embodiment, since the pattern of the roll transfer die 1 can be accurately transferred to the UV-curable resin 3, the forming degree is high, and this height is the resist of the
The UV hardening resin 3 can add a photoinitiator, the monomer which has an ethylene double bond, etc. beforehand. As the photosensitive type, either a negative shape material or a positive shape material may be used.
The coating method of the UV curable resin 3 used in the present invention includes roll coater coating, spin coater coating, spray coater coating, dipping coater coating, wire bar coater coating, gravure coater coating, air knife coater coating, and the like. Since this is not a subject, detailed explanation is omitted. In this example, roll coater coating was used.
Thereby, the laminated body of the
It is preferable to use the organic polymer which can be wound in a film form, or its composition as the uneven UV hardening
Next, the photosensitive material 5 of the composition solution shown in Table 2 was formed on the surface on which the uneven
As a result, a layer of photosensitive material 5 having a thickness of about 0.15 or less is formed on the uneven surface of the
In this process, the
Next, as shown in FIG. 8 described above, the
The laminate uses a laminator (roll laminator) and laminates the photosensitive material 5 layer on the
Next, the
Next, the resist
The
The
As shown in Fig. 13, the thin portion of the resist
Dry etching is further performed to reduce the etching rate of the
In addition, the
This makes it possible to increase the aspect ratio, which is important for the diffraction
The diffraction
By forming the diffraction
It can also be applied to LED chip elements such as red lights such as Al Ga As.
1 is a view showing a roll transfer type of the present invention.
2A and 2B are process charts showing the production outline of the roll transfer die of the present invention.
Fig. 3 is a diagram showing a legend shape of a roll transfer type unevenness of the present invention.
4 is a view showing an apparatus for producing the uneven transfer film of the present invention.
5 is a cross-sectional view of the uneven transfer film laminate of the present invention.
It is sectional drawing of the laminated | multilayer film laminated body for RIE resist.
7 is a schematic diagram of an RIE apparatus.
8 is a schematic view of a RIE treatment process.
9 is a schematic diagram of a production RIE apparatus.
Fig. 10 shows the diffraction grating structure and the light path.
11 shows the concave-convex shape of the Si wafer substrate used in the embodiment of the present invention.
12 shows an example of master pole placement on a glass substrate of an embodiment of the present invention.
Fig. 13 shows the resist film shape and dry etching situation in the embodiment of the present invention.
14 shows a light emission situation according to an embodiment of the present invention.
≪ Description of reference numerals &
1 roll transfer type
2 plastic film
3 UV Curing Resin
4 uneven transfer film
5 photosensitive material
6 resist film
7 Wafer Board for LED Chip Device
8 RIE Device
9 Diffraction Grating Structure
10 Feed rate control roll
11a Gap Control Rolla
11b gap control roll b
12 UV lamp
13 winding speed control roll
14 winding device
15 gap plate
16 UV Curable Resin Feeder
17 UV Curing Resin Gap Roll
18 uneven UV curing resin layer
19 release film
20 laminated film for RIE resist
21 gap control roll
22 speed control roll
23 Mold Roll B
24 diffusion patterns
25 winding device
26 LED Chip Device
27 Si Wafer Substrate
28 Ag layer
29 master pole type
Unevenness behind 30 telephone poles
31 diamond bite planar processing machine
32 glass substrate
33 Master pole type Continuous batch type
34 Curve of Resist Film
35 Mountain of resist film
36 Ni precast
37 Ni pole layer
38 uneven shape of the roll transfer type
39 RIE vacuum chamber
40 Etching chamber
41 Transfer Seal
42 Load Room
43 Unload Room
44 Gate valve
44 vacuum robot
46 Mass flow controller
47 Turbo molecule pump
48 Conductance variable valve
49 Dry pump
50 rays
Concave-convex shape of 51 Si wafer substrate
52 Electroless Plating Method
53 Activated Gas
Claims (17)
Priority Applications (1)
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KR1020090031936A KR101075940B1 (en) | 2009-04-13 | 2009-04-13 | Led chip device structure, method for manufacturing the same, and led chip device obtained by the method |
Applications Claiming Priority (1)
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KR1020090031936A KR101075940B1 (en) | 2009-04-13 | 2009-04-13 | Led chip device structure, method for manufacturing the same, and led chip device obtained by the method |
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KR101075940B1 true KR101075940B1 (en) | 2011-10-21 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6878969B2 (en) | 2002-07-29 | 2005-04-12 | Matsushita Electric Works, Ltd. | Light emitting device |
WO2008081717A1 (en) | 2006-12-22 | 2008-07-10 | Showa Denko K.K. | Method for producing group iii nitride semiconductor layer, group iii nitride semiconductor light-emitting device, and lamp |
JP2009038188A (en) * | 2007-08-01 | 2009-02-19 | Toyoda Gosei Co Ltd | Led lamp for display device, and led display device |
-
2009
- 2009-04-13 KR KR1020090031936A patent/KR101075940B1/en not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6878969B2 (en) | 2002-07-29 | 2005-04-12 | Matsushita Electric Works, Ltd. | Light emitting device |
WO2008081717A1 (en) | 2006-12-22 | 2008-07-10 | Showa Denko K.K. | Method for producing group iii nitride semiconductor layer, group iii nitride semiconductor light-emitting device, and lamp |
JP2009038188A (en) * | 2007-08-01 | 2009-02-19 | Toyoda Gosei Co Ltd | Led lamp for display device, and led display device |
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KR20100113384A (en) | 2010-10-21 |
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