CN115356893A - Preparation method of nanoimprint hard mold - Google Patents

Preparation method of nanoimprint hard mold Download PDF

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Publication number
CN115356893A
CN115356893A CN202210970422.6A CN202210970422A CN115356893A CN 115356893 A CN115356893 A CN 115356893A CN 202210970422 A CN202210970422 A CN 202210970422A CN 115356893 A CN115356893 A CN 115356893A
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China
Prior art keywords
groove
grating
film layer
thin film
layer
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CN202210970422.6A
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Chinese (zh)
Inventor
郭培亮
李莹
吾晓
张玉良
饶轶
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Goertek Optical Technology Co Ltd
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Goertek Optical Technology Co Ltd
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Priority to CN202210970422.6A priority Critical patent/CN115356893A/en
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping

Abstract

The embodiment of the disclosure discloses a preparation method of a nanoimprint hard mold. The preparation method comprises the following steps: providing a stamping sheet, wherein the stamping sheet is provided with a glue layer, a first grating groove is formed in the glue layer, and a set texture is formed in the first grating groove; modifying the first grating groove to form a modified groove, wherein the width of the modified groove is greater than that of the first grating groove, and the depth of the modified groove is equal to that of the first grating groove; and plating a film layer on the modification groove to form a second grating groove, wherein the hardness of the film layer is greater than that of the adhesive layer, the size of the second grating groove is the same as that of the first grating groove, and the second grating groove forms the set grains.

Description

Preparation method of nanoimprint hard mold
Technical Field
The invention relates to the technical field of diffraction grating preparation, in particular to a preparation method of a nanoimprint hard mold.
Background
A diffraction grating is one type of grating. It subjects the amplitude or phase (or both) of the incident light to periodic spatial modulation by a regular structure. Diffraction gratings in practice are generally flat plates with grooves or indentations in the surface. Wherein the grooves or scores can be made by nanoimprint techniques. At present, the nano-imprint processing technology replaces the traditional mechanical method and becomes the main means for processing the grating. At present, the mainstream nanoimprint lithography scheme is an ultraviolet soft film imprinting scheme, wherein a hard mold is a master mold for nanoimprint lithography, and the performance and the structure of the hard mold can be damaged and need to be replaced frequently after multiple times of imprinting. However, the new hard mold is relatively complex to manufacture, needs electron beam exposure, development and etching, and has low yield, long time consumption and high cost.
Therefore, a new technical solution is needed to solve the above technical problems.
Disclosure of Invention
The invention aims to provide a new technical scheme of a preparation method of a nanoimprint hard mold.
According to one aspect of the present invention, a method of making a nanoimprint hardmask is provided. The method comprises the following steps: providing a stamping sheet, wherein the stamping sheet is provided with a glue layer, a first grating groove is formed in the glue layer, and a set line is formed in the first grating groove;
modifying the first grating groove to form a modified groove, wherein the width of the modified groove is greater than that of the first grating groove, and the depth of the modified groove is equal to that of the first grating groove;
and plating a thin film layer on the modification groove to form a second grating groove, wherein the hardness of the thin film layer is greater than that of the adhesive layer, the size of the second grating groove is the same as that of the first grating groove, and the second grating groove forms the set grains.
Optionally, the material of the glue layer is UV type nanoimprint glue.
Optionally, the modifying the first grating groove to form a modified groove includes:
and modifying the first grating groove by a reactive ion beam etching process.
Optionally, the first grating groove is modified to form a modified groove,
the ratio of the width of the modification groove to the width of the first grating groove is 1.2.
Optionally, the plating a thin film layer on the modification groove to form a second grating groove includes:
and plating a thin film layer on the modification groove by an atomic layer thin film deposition process.
Optionally, the material of the thin film layer is silicon dioxide or titanium dioxide.
Optionally, after plating a thin film layer on the modifying groove to form a second grating groove, the method further includes:
and carrying out surface activation treatment on the film layer.
Optionally, the thin film layer is subjected to a surface activation treatment by a plasma cleaning process.
Optionally, after the surface activation treatment is performed on the thin film layer, the method further includes:
and coating an anti-sticking layer on the film layer.
Optionally, the material of the anti-sticking layer is fluorine-containing low surface energy organic matter.
In the embodiment of the disclosure, the grating grooves on the adhesive layer of the existing stamping sheet are etched and coated with the thin film layer, so that the stamping sheet can be improved into a new hard mold meeting the hardness requirement, the production efficiency and the production yield of the hard mold are effectively improved, and inconvenience caused by the need of manufacturing the new hard mold through a complex process is avoided. In addition, the existing stamping sheet is low in cost, and the manufacturing cost of the hard mold can be reduced by improving the existing stamping sheet to obtain a new hard mold.
Other features of the present invention and advantages thereof will become apparent from the following detailed description of exemplary embodiments of the invention, which proceeds with reference to the accompanying drawings.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description, serve to explain the principles of the invention.
Fig. 1 is a flow chart of a method of making a nanoimprint hardmask according to embodiments of the disclosure.
FIG. 2 is a schematic view of an impression slip according to an embodiment of the present disclosure.
FIG. 3 is a schematic view of a trim tank according to an embodiment of the disclosure.
Fig. 4 is a schematic diagram of a thin film layer according to an embodiment of the present disclosure.
FIG. 5 is a schematic view of an anti-stiction layer according to an embodiment of the disclosure.
1. Stamping the sheet; 2. a glue layer; 3. a first grating groove; 4. a trimming groove; 5. a thin film layer; 6. a second grating groove; 7. and (4) an anti-sticking layer.
Detailed Description
Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that: the relative arrangement of the components and steps, the numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise.
The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses.
Techniques, methods, and apparatus known to one of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate.
In all examples shown and discussed herein, any particular value should be construed as exemplary only and not as limiting. Thus, other examples of the exemplary embodiments may have different values.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, further discussion thereof is not required in subsequent figures.
According to one embodiment of the present disclosure, a method of fabricating a nanoimprint hardmask is provided. As shown in fig. 1, the method includes:
an imprint sheet 1 is provided. The embossing sheet 1 has a glue layer 2. The glue layer 2 is formed with a first grating groove 3. The first grating grooves 3 are formed with a set pattern.
The first grating groove 3 is modified to form a modified groove 4. The width of the modification groove 4 is greater than the width of the first grating groove 3. The depth of the modification groove 4 is smaller than the depth of the first grating groove 3.
And plating a thin film layer 5 on the modification groove 4 to form a second grating groove 6. The hardness of the film layer 5 is greater than that of the glue layer 2. The second grating groove 6 has the same size as the first grating groove 3. The second grating grooves 6 form set lines.
It should be noted that, in the nanoimprinting process, three parts are included, namely a hard mold, a soft mold and a product. Typically, the texture on the soft mold mirrors the texture of the hard mold. The user can pass through the soft mould with the line structure rendition on the hard mould to the product. The performance and structure of the die can be damaged under the condition that the die is stamped for many times or the die is accidentally damaged.
In this embodiment, the stamping sheet 1 is the product described above. Since the manufacturing cost of the stamping sheet 1 is low, a new hard mold is obtained by improving the stamping sheet 1, so that the manufacturing cost of the hard mold can be obviously reduced.
In addition, the glue layer 2 of the stamping sheet 1 is decorated and the film coating layer 5 is plated, so that a hard die meeting the hardness requirement is obtained, and the difficulty of manufacturing the hard die can be reduced. The complex process of manufacturing the hard mold originally is avoided, and the preparation efficiency of the hard mold is improved.
In the present embodiment, the imprint sheet 1 has a glue layer 2, as shown in fig. 2. The glue layer 2 is formed with a first grating groove 3. The first grating grooves 3 form set lines. The set texture of the first grating grooves 3 formed in the stamp sheet 1 is the set texture on the die. That is, the set pattern of the first grating grooves 3 formed in the original imprint sheet 1 is a set pattern on the hard mold with accurate accuracy.
As shown in fig. 3, the first grating grooves 3 are modified to form modified grooves 4. The width of the modification groove 4 is greater than the width of the first grating groove 3. The depth of the modification groove 4 is smaller than the depth of the first grating groove 3. As shown in fig. 4, a thin film layer 5 is coated on the modification groove 4 to form a second grating groove 6. The size of the second grating groove 6 is the same as that of the first grating groove 3, and the second grating groove 6 forms the set lines.
In this embodiment, the first grating groove 3 is modified to obtain the modification groove 4, and the second grating groove 6 is formed in the modification groove 4 by plating the thin film layer 5, so that the thin film layer 5 is formed on the surface of the first grating groove 3 on the premise of not changing the size of the first grating groove 3, thereby effectively ensuring the stamping precision of the hard mold obtained by improving the stamping sheet 1.
The hardness of the film layer 5 is greater than that of the glue layer 2. Therefore, the film layer 5 can effectively improve the hardness of the first grating groove 3, and further, a hard die obtained by improving the stamping sheet 1 can meet the corresponding hardness requirement, and finally, the purpose of improving the preparation efficiency of the hard die is achieved.
In one example, the material of the glue layer 2 is a UV type nanoimprint glue.
It should be noted that, in general, the texture on the soft mold mirrors the texture of the hard mold. The user can be through the line structure rendition on soft mould with the hard mould to the product. The material selection of the glue film 2 of the imprinting sheet 1 is UV type nano-imprinting glue, so that the UV type nano-imprinting glue can be irradiated by UV light to be solidified, the structure of the glue film 2 formed in the way is not easy to deform, and the size precision of the first grating groove 3 formed in addition is high. And UV light irradiation is simple and easy to handle.
In addition, there is another method of "hot embossing" by the soft mold to transfer the texture of the hard mold to the product. The hot stamping is to transfer the structure on the hard die to the glue layer of the stamping sheet 1 in a heating mode, and then cool the structure to shape the thermosetting stamping glue. This method of "hot embossing" involves a heating process which causes deformations of the first grating grooves 3, which is not favourable for obtaining first grating grooves 3 with high dimensional accuracy.
In one example, modifying the first grating groove 3 to form a modified groove 4 includes:
the first grating groove 3 is modified by a reactive ion beam etching process.
It should be noted that the principle of the reactive ion beam etching process is as follows:
argon gas is decomposed into argon ions under the action of a glow discharge principle, and the argon ions physically bombard the surface of a sample through the acceleration of an anode electric field to achieve the etching effect. Argon is filled into an ion source discharge chamber and ionized to form plasma, ions are led out through a grid to be in a beam shape and accelerated, ion beams with certain energy enter a working chamber, and are emitted to the surface of a solid to bombard atoms on the surface of the solid, so that the atoms of the material are sputtered, and the purpose of etching is achieved.
The reactive ion beam etching process is characterized in that:
1. universality of ion beam etching:
ion beam etching systems can be used to etch a variety of different types of materials, including many compounds and alloy materials, even if the appropriate volatile etch products are not. The etch rate of the target will not vary by more than a factor of three due to material differences. Therefore, the ion beam etching system is widely applied to the preparation of YBaCuO, inAlGaAs and other ternary compounds and quaternary compounds.
2. Directionality of ion beam etching:
the directionality of the etch is due to the fact that the ions in the beam are accelerated by a strong vertical electric field, and the very low pressure in the chamber, collisions between atoms are almost completely impossible, and as a result, the atoms are near perfect verticality when they strike the wafer surface. Since it is not associated with chemical properties, it is possible to perform anisotropic etching on any material.
In the embodiment of the present disclosure, the first grating groove 3 is modified by a reactive ion beam etching process. Wherein RIBE etcher can be used and working gas is CHF 3 The etching groove shape of the modification groove 4 is controlled by adjusting the ion energy, the accelerating voltage and the etching time, so that the etching precision of the modification groove 4 can be effectively improved, the subsequent thin film layer 5 plated in the modification groove 4 can also have higher precision, finally, the obtained second grating groove 6 is the same as the first grating groove 3 in size, and the reactive ion beam etching is carried outThe adoption of the process effectively improves the accuracy of the etching process.
In one example, the first grating grooves 3 are modified to form modified grooves 4,
the ratio of the width of the modification groove 4 to the width of the first grating groove 3 is 1.2.
For example, the ratio of the widths of the modified trench 4 and the first grating trench 3 is in the above range, so that the thin film layer 5 deposited in the modified trench 4 can be ensured to meet the hardness requirement without generating excessive waste of the material of the thin film layer 5. In addition, etching too deep the trimming groove 4 means that more material of the thin film layer 5 needs to be deposited in the trimming groove 4 subsequently, which is not favorable for improving the stamping sheet 1, and the deposition of too much material of the thin film layer 5 affects the size of the first grating groove 3, and thus the stamping accuracy of the hard mold made from the stamping sheet 1.
In one example, plating a thin film layer 5 on the trim groove 4 to form a second grating groove 6, includes:
and plating a film layer 5 on the modification tank 4 by an atomic layer film deposition process.
For example, atomic layer deposition is a process by which a substance can be deposited as a single atomic film, layer by layer, onto a substrate surface. Atomic layer deposition allows for precise control of film thickness at the atomic layer level. Also, a multilayer structure of different materials can be formed relatively easily.
In this embodiment, the thin film layer 5 is plated on the modification groove 4 by an atomic layer thin film deposition process, so that the accuracy of the deposition thickness of the thin film layer 5 can be effectively controlled, and the problem that the initial size of the first grating groove 3 is affected by the excessively thick thin film layer 5, and further the hard mold stamping error of the stamping sheet 1 is too large is avoided.
In addition, the atomic layer deposition mode can be effectively adapted to the structure of the glue layer 2, so that the deposited thin film layer 5 and the structure of the modification groove 4 can be matched, the effectiveness and the accuracy of the work of the imprinting sheet 1 provided with the thin film layer 5 in the subsequent imprinting process are ensured, and the imprinting error caused by the uneven arrangement of the thin film layer 5 in the modification groove 4 in the imprinting process is avoided.
In one example, the material of the thin film layer 5 is silicon dioxide or titanium dioxide.
For example, the thin film layer 5 is coated on the dressing bath 4. The material of the thin film layer 5 is silicon dioxide or titanium dioxide. The above materials of the film layer 5 have high strength, which enables the film layer 5 disposed on the modification groove 4 to effectively increase the strength of the embossed sheet 1 itself.
In one example, after the thin film layer 5 is coated on the trimming groove 4 to form the second grating groove 6, the method further includes:
the thin film layer 5 is subjected to surface activation treatment.
For example, the surface activation treatment is performed on the thin film layer 5, so that the surface effect of the thin film layer 5 can be activated and the surface of the thin film layer 5 has good wettability. Thereby allowing the film layer 5 to adhere well to the adhesive material during subsequent processes, whether spraying, gluing, printing or pressure welding.
In one example, the thin film layer 5 is subjected to a surface activation treatment by a plasma cleaning process.
For example, a plasma cleaning apparatus may be used, the apparatus power being set at 500w, the working gas being O 2 ,O 2 With a flow rate of 50sccm for 100 seconds, the thin film layer 5 on the imprint sheet 1 was subjected to surface activation treatment.
Specifically, in the plasma cleaning process, the imprint sheet 1 is dried after being cleaned by the plasma cleaning apparatus, and can be sent to the next process without being dried. The treatment efficiency of the whole process flow line can be improved.
Plasma cleaning enables an operator to be far away from the harm of harmful solvents to human bodies, and meanwhile, the problem that the stamping sheet 1 is easily washed to be damaged in wet cleaning is avoided.
The plasma cleaning process avoids using ODS (ozone depleting substance) harmful solvents such as trichloroethane and the like, so that harmful pollutants are not generated after cleaning, and the cleaning method belongs to an environment-friendly green cleaning method.
Plasma cleaning devices use high frequency generated plasma in the radio wave range as opposed to direct light such as laser light. The directionality of the plasma is not strong, which makes it possible to perform a cleaning task deep into the inside of the micro-holes and depressions of the object, and thus it is not necessary to excessively consider the shape of the embossed sheet 1.
The plasma cleaning process can greatly improve the cleaning efficiency. The whole cleaning process can be completed within a few minutes, so that the method has the characteristic of high yield.
The vacuum degree of plasma cleaning needs to be controlled to be about 100Pa, and the cleaning condition is easy to achieve. Therefore, the equipment cost of the device is not high, and the cleaning process does not need to use expensive organic solvent, so that the whole cleaning cost is effectively reduced.
The plasma cleaning process avoids the treatment measures of transportation, storage, discharge and the like of cleaning liquid, so that the production site is easy to keep clean and sanitary.
The plasma cleaning process can be performed on a variety of materials, regardless of the object to be treated, and can be performed on a variety of materials, including metals, semiconductors, oxides, and polymers (e.g., polypropylene, polyvinyl chloride, polytetrafluoroethylene, polyimide, polyester, epoxy resin, and the like) using plasma. Therefore, the method is particularly suitable for materials which are not heat-resistant and solvent-resistant. But also to selectively clean the whole, part or complex structure of the material partially.
The plasma cleaning process can improve the surface performance of the material while completing cleaning and decontamination. Such as improved surface wettability, improved film adhesion, etc.
In one example, as shown in fig. 5, after the surface activation treatment is performed on the thin film layer 5, the method further includes:
an anti-stick layer 7 is applied to the film layer 5.
For example, the anti-sticking layer 7 may be applied using a spin coater so that the anti-sticking layer 7 can be uniformly disposed on the surface of the thin film layer 5. The anti-sticking layer 7 is arranged on the surface of the film layer 5, so that the hard mould which is improved by the stamping sheet 1 can reduce the drawing force between the hard mould and the soft mould in the subsequent stamping process, and the problem of mould release failure caused by adhesion between the hard mould and the soft mould is solved.
In one example, the material of the anti-sticking layer 7 is a fluorine-containing low surface energy organic substance.
For example, the material of the anti-sticking layer 7 is an anti-sticking agent for nanoimprinting containing fluorosilane.
In the above embodiments, the differences between the embodiments are described in emphasis, and different optimization features between the embodiments can be combined to form a better embodiment as long as the differences are not contradictory, and further description is omitted here in consideration of brevity of the text.
Although some specific embodiments of the present invention have been described in detail by way of examples, it should be understood by those skilled in the art that the above examples are for illustrative purposes only and are not intended to limit the scope of the present invention. It will be appreciated by those skilled in the art that modifications can be made to the above embodiments without departing from the scope and spirit of the invention. The scope of the invention is defined by the appended claims.

Claims (10)

1. A method for preparing a nanoimprint hard mold is characterized by comprising the following steps:
providing a stamping sheet, wherein the stamping sheet is provided with a glue layer, a first grating groove is formed in the glue layer, and a set texture is formed in the first grating groove;
modifying the first grating groove to form a modified groove, wherein the width of the modified groove is greater than that of the first grating groove, and the depth of the modified groove is equal to that of the first grating groove;
and plating a thin film layer on the modification groove to form a second grating groove, wherein the hardness of the thin film layer is greater than that of the adhesive layer, the size of the second grating groove is the same as that of the first grating groove, and the second grating groove forms the set grains.
2. The production method according to claim 1,
the adhesive layer is made of UV type nano-imprinting adhesive.
3. The method of claim 1, wherein the modifying the first grating grooves to form modified grooves comprises:
and modifying the first grating groove by a reactive ion beam etching process.
4. The method of claim 1, wherein the first grating grooves are modified to form modified grooves,
the ratio of the width of the modification groove to the width of the first grating groove is 1.2.
5. The method of claim 1, wherein the plating a thin film layer on the modified trench to form a second grating trench comprises:
and plating a thin film layer on the modification groove by an atomic layer thin film deposition process.
6. The production method according to claim 1,
the thin film layer is made of silicon dioxide or titanium dioxide.
7. The method according to claim 1, wherein after the plating a thin film layer on the modification groove to form a second grating groove, the method further comprises:
and carrying out surface activation treatment on the film layer.
8. The production method according to claim 7,
and carrying out surface activation treatment on the thin film layer by a plasma cleaning process.
9. The method for producing according to claim 7, further comprising, after the surface activation treatment of the thin film layer:
and coating an anti-sticking layer on the film layer.
10. The production method according to claim 9,
the material of the anti-sticking layer is fluorine-containing low-surface-energy organic matter.
CN202210970422.6A 2022-08-12 2022-08-12 Preparation method of nanoimprint hard mold Pending CN115356893A (en)

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Application Number Priority Date Filing Date Title
CN202210970422.6A CN115356893A (en) 2022-08-12 2022-08-12 Preparation method of nanoimprint hard mold

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210970422.6A CN115356893A (en) 2022-08-12 2022-08-12 Preparation method of nanoimprint hard mold

Publications (1)

Publication Number Publication Date
CN115356893A true CN115356893A (en) 2022-11-18

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Application Number Title Priority Date Filing Date
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Country Status (1)

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