KR101068854B1

KR101068854B1 - patterned thin film substrate manufacturing method

Info

Publication number: KR101068854B1
Application number: KR1020100015153A
Authority: KR
Inventors: 우광제; 유율리아
Original assignee: 삼성코닝정밀소재 주식회사
Priority date: 2010-02-19
Filing date: 2010-02-19
Publication date: 2011-09-29
Also published as: KR20110095597A

Abstract

The present invention relates to a method for manufacturing a patterned thin film substrate for improving efficiency of a solar cell and a backlight unit, and the method for manufacturing a patterned thin film substrate according to the present invention includes a basic pattern having an embossed portion and an intaglio portion on one surface of the first substrate. Forming a structure, forming a space layer for obtaining a pattern inside the first substrate, bonding the second substrate to the first substrate, and forming a space layer on the first substrate to which the second substrate is bonded. It characterized in that it comprises the step of separating based on.

Description

Method for manufacturing patterned thin film

The present invention relates to a method of manufacturing a patterned thin film substrate for improving the efficiency of the solar cell and the backlight unit.

Solar cells are a key element of solar power generation that converts solar energy directly into electricity. Solar cells are currently used in a variety of fields, including electricity, electronics, electricity supply to homes and buildings, and industrial development. The most basic structure of the solar cell is a diode type consisting of a pn junction, it is classified according to the materials of the light absorption layer, a silicon solar cell that uses silicon as the light absorbing layer, the light absorbing layer CIS (CuInSe ₂₎ or using the compound aspect the CdTe It is classified into a dye-sensitized solar cell in which a photosensitive dye molecule in which electrons are excited by absorbing visible light on the surface of a nanoparticle of a porous membrane and a stacked solar cell in which a plurality of amorphous silicon are stacked. In addition, solar cells are classified into bulk (including single crystals and polycrystals) and thin film (amorphous, microcrystalline) solar cells.

Currently, bulk crystalline silicon solar cells using polycrystalline silicon account for more than 90% of the total market, and the unit cost of photovoltaic power generation of bulk crystalline silicon solar cells is at least three times up to ten times higher than conventional thermal, nuclear, and hydropower. expensive. This is mainly due to the high production cost of crystalline silicon solar cells using a large amount of expensive silicon raw materials and complicated manufacturing processes. In recent years, research and commercialization of amorphous silicon (a-Si: H) and microcrystalline silicon (μc-Si: H) thin film solar cells are in progress.

1 illustrates a structure of a solar cell using conventional amorphous silicon as a light absorbing layer.

As shown, the conventional amorphous silicon (eg, a-Si: H) solar cell 110 is a P-type amorphous silicon (a-Si: H doped with a transparent substrate 111 / transparent conductive film 112 / impurities) 113 / I-doped amorphous silicon (a-Si: H) 114 / I-doped n-type amorphous silicon (a-Si: H) 115 / Back reflector 116. In the pin-type amorphous silicon (a-Si: H), the i-type amorphous silicon (a-Si: H) 114 which is not doped with impurities is P-type and n-type amorphous silicon (a-Si: H) doped with impurities. Depletion by the 113 and 115, the electric field is generated inside. The hole-electron pairs generated in the i-type amorphous silicon (a-Si: H) 114 by the incident light hv are respectively P-type amorphous silicon (a-Si: H) 113 by drift by the internal electric field. And n-type amorphous silicon (a-Si: H) 115 is collected to generate a current.

Transparent conductive films used in solar cells are required to have high light transmittance, high conductivity, and high light trapping effects. In particular, in the amorphous silicon thin film solar cell, it is important to increase the light trapping as much as possible because the light absorption of amorphous silicon is low. In order to implement a light trapping effect, a transparent conductive film for a solar cell has a texturing structure on its surface. The method of forming a texturing structure on the transparent conductive film may be simultaneously performed in the process of forming the conductive film on the transparent substrate, or may be implemented by wet etching the conductive film formed on the transparent substrate.

Meanwhile, the backlight unit includes a prism sheet, a diffuser sheet, and a reflector sheet, and a pattern is formed on at least one sheet to increase light extraction efficiency. Pattern formation methods include photolithography, e-beam or ion-beam lithography, dry etching, wet etching, and nano- Imprint (Nano-imprint).

Photolithography process is based on the principle that the properties change when a certain photoresist receives light, causing a chemical reaction. The photolithography process uses a pattern mask to obtain light selectively. It is a process of forming the same pattern as the pattern of a mask by irradiating to a photo resist.

E-beam lithography accelerates the electron beam emitted from the cathode to several tens of kV and passes the electron lens to expose the micropattern to the resist. This technique is mainly used to make photo masks that are the same size as the original size or are enlarged 10 times.

E-beam lithography processes narrow areas by scanning the focused ion beam in a desired pattern. Dry etching is a method of etching a surface by supplying a gas to generate a high vapor pressure material or a volatile material without using chemicals.

Nano-imprint is a technique proposed to realize nano processing, which is ultrafine processing. Overcoming the limitations of the miniaturization of photolithography in the conventional semiconductor process, nano-sized patterns are simply printed onto a substrate to produce nanostructures, like ink-filled stamps. This makes it possible to improve the integration density of semiconductor devices by enabling pattern sizes of 100 nm class up to 10 nm. In other words, a stamp having a line width of several tens to several tens of nanoscales is manufactured by using an electron beam, and then the same shape as the pattern formed on the stamp by applying heat or UV on a resist-coated substrate. It is a technique to simulate.

However, in the related art, not only the process procedure required for forming the concave-convex pattern on the surface of the substrate is difficult, but the process time is too long, and the process cost is expensive.

The present invention has been proposed in the background as described above, and an object of the present invention is to provide a method for manufacturing a patterned thin film substrate which can reduce a process procedure and time and cost required to form an uneven pattern on the substrate surface.

It is an additional object of the present invention to provide a method for manufacturing a patterned thin film substrate that can be used for solar cells and backlight units.

In order to achieve the above object, a method of manufacturing a patterned thin film substrate according to an aspect of the present invention, forming a basic pattern structure having an embossed portion and the negative portion on one surface of the first substrate, Forming a space layer to obtain a pattern therein; bonding the second substrate to the first substrate; and separating the first substrate to which the second substrate is bonded based on the space layer. It is done.

In the method of manufacturing a patterned thin film substrate according to an additional aspect of the present invention, the basic pattern structure formed on one surface of the first substrate may include a rectangular column, a cylinder such as a pipe, a triangular column, a pyramid shape, a cone shape, a sphere shape, Characterized in that implemented in any one of the tetrahedral structure.

According to the above configuration, the method for manufacturing a patterned thin film substrate of the present invention comprises a heat treatment process for forming a desired pattern on a first substrate having a simple basic pattern structure, and a bonding process for bonding the first substrate to the second substrate. And, since the second substrate is implemented to include a space layer separation process of the first substrate bonded, there is a useful effect that can reduce the process procedure and time and the process cost.

In addition, according to the method for manufacturing a patterned thin film substrate of the present invention, an ultra-thin film and a high quality wafer having an uneven pattern on the surface can be obtained, which can be used for a compound semiconductor material substrate and a solar cell and a backlight unit substrate to which the substrate is applied. It works.

1 illustrates a structure of a solar cell using conventional amorphous silicon as a light absorbing layer.
2 is a flowchart illustrating a method of manufacturing a patterned thin film substrate according to an embodiment of the present invention.
3 is an exemplary view for explaining a method for manufacturing a patterned thin film substrate according to the present invention.
4 is an exemplary view for explaining a method for manufacturing a patterned thin film substrate according to the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made in detail to the present embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the like elements throughout.

2 is a flowchart illustrating a method of manufacturing a patterned thin film substrate according to an exemplary embodiment of the present invention, and FIGS. 3 and 4 are exemplary views for describing a method of manufacturing a patterned thin film substrate according to the present invention.

First, a method of manufacturing a patterned thin film substrate according to the present invention will be described with reference to FIG. 2.

A method of manufacturing a patterned thin film substrate according to the present invention includes a base having an intaglio portion (reference numeral 311 in FIG. 3) and an embossed portion (reference numeral 312 in FIG. 3) on one surface of a first substrate (reference numeral 31 in FIG. 3). A pattern structure is formed (S21). This basic pattern structure is to form an empty space layer inside the first substrate (reference numeral 31 of FIG. 3) by high temperature heat treatment.

Thereafter, a space layer for forming a pattern desired by a user is formed in the first substrate (reference numeral 31 of FIG. 3) (S22). For example, when the first substrate (reference numeral 31 of FIG. 3) on which the basic pattern structure is formed is subjected to high temperature heat treatment, a recombination process is performed on the surface of the first substrate (reference numeral 31 of FIG. 3), and a plurality of independent spaces are formed therein. As the layer (reference numeral 313 of FIG. 3) is formed, one space layer (reference numeral 314 of FIG. 3) having a pattern formed therein is gradually formed over time.

Thereafter, the second substrate (reference numeral 32 in FIG. 4) is bonded to the first substrate (reference numeral 31 in FIG. 4) in which the space layer (314 in FIG. 4) is formed (S23). The first substrate on which the second substrate is bonded is separated based on the space layer (reference numeral 314 in FIG. 4) (S24).

Hereinafter, a method of manufacturing a patterned thin film substrate according to the present invention will be described with reference to FIGS. 3 and 4.

As shown in FIG. 3A, a basic pattern structure having an intaglio portion 311 and an embossed portion 312 is formed on one surface of the first substrate 31. The basic pattern structure is to form an empty space layer therein by high temperature heat treatment of the first substrate 31. For example, the basic pattern structure may be implemented as any one of a rectangular column, a cylinder such as a pipe, a triangular column, a pyramid, a cone, a sphere, and a tetrahedral structure. The intaglio portion 311 has a depth of 0.05 μm or more, 20 μm or less, and a diameter of 0.01 μm or more and 10 μm or less. In addition, the interval between the intaglio portions 311 may be 0.01 μm or more and 20 μm or less.

As a method of forming the basic pattern structure on one surface of the first substrate 31, photolithography, E-beam lithography, ion-beam lithography, dry etching ( Dry etching, wet etching, nano-imprint may be implemented by any one process.

As shown in (B) and (C) of FIG. 3, when the first substrate 31 on which the basic pattern structure is formed is subjected to high temperature heat treatment, a recombination process is performed on the surface of the first substrate 31, Four independent spatial layers 313 are formed, and as time passes, one spatial layer 314 is formed. The heat treatment temperature and heat treatment time during the high temperature heat treatment process vary depending on the type of material constituting the first substrate 31 and the desired pattern shape. For example, the first substrate 31 on which the basic pattern structure is formed is heat-treated at a temperature of 100 ° C. or more and 1000 ° C. or less for 1 minute or more and 600 minutes or less.

As shown in FIG. 4A, a second substrate 32 to be used as a base substrate of a solar cell or a backlight unit is bonded to the first substrate 31 on which one space layer 314 is formed. do. For example, the first substrate 31 and the second substrate 32 may include aluminum nitride, beryllium oxide, gallium arsenide, gallium nitride, germanium, and the like. Indium Phosphide, Lithium Niobate, Lithium Tantalate, Sapphire, Silica-Fused, Silicon, Silicon Carbide It may be implemented with any one material selected from silicon germanium.

As shown in FIG. 4B, the first substrate 31 to which the second substrate 32 is bonded is separated from each other based on the space layer 314, and the second substrate 32 is bonded to the first substrate 31. The first substrate 31b separated from the first substrate 31a is obtained.

Separation process is possible by the difference in the heat window coefficient during cooling and the physical force applied to the first substrate (31). After the separation process, the substrate 31b separated from the existing first substrate 31 is processed into a substrate having a flat surface through a surface polishing process, which is again used as the first substrate in the present invention.

As shown in FIG. 4C, the second substrate 32 to which the first substrate 31a is bonded may be applied to a solar cell substrate and an LED element substrate as a wafer on which a pattern 315 is formed. have.

Thus far, the present specification has been described with reference to the embodiments shown in the drawings so that those skilled in the art can easily understand and reproduce the present invention, but this is merely exemplary, and the description Those skilled in the art will understand that various modifications and equivalent other embodiments are possible from the embodiments of the present invention. Accordingly, the true scope of the present invention should be determined only by the appended claims.

31: first substrate
32: second substrate
314: space layer

Claims

Forming a basic pattern structure having an embossed portion and an engraved portion on one surface of the first substrate;
Forming a space layer for obtaining a pattern in the first substrate;
Bonding a second substrate to the first substrate; And
Separating the first substrate on which the second substrate is bonded based on the space layer;
Patterned thin film substrate manufacturing method comprising a.

The method of claim 1, wherein in the forming of the basic pattern structure on one surface of the first substrate, the basic pattern structure is a rectangular cylinder, a cylinder such as a pipe, a triangular pillar, a pyramid, a cone, a sphere, a tetrahedron. Method of manufacturing a patterned thin film substrate, characterized in that implemented in any one of the structures.

The method of claim 1, wherein the forming of the basic pattern structure on one surface of the first substrate,
Photolithography, E-beam lithography, Focused Ion Bean lithography, Dry etching, Wet etching, Nano-imprint A method of manufacturing a patterned thin film substrate, characterized in that the process comprises any one of.

The method of claim 1, wherein forming a space layer for obtaining a pattern in the first substrate is performed.
As the recombination process is performed on the surface of the first substrate, a plurality of independent space layers are formed inside the first substrate, and a pattern is formed in which a space layer having a pattern formed therein is gradually formed over time. Thin film substrate manufacturing method.

The method of claim 1,
The first substrate may be aluminum nitride, beryllium oxide, gallium arsenide, gallium nitride, germanium, indium phosphide, or lithium-niobate. One selected from Lithium Niobate, Lithium Tantalate, Sapphire, Silica-Fused, Silicon, Silicon Carbide, and Silicon Germanium. A method of manufacturing a patterned thin film substrate, characterized in that the material is implemented.

The method of claim 1,
The second substrate may be aluminum nitride, beryllium oxide, gallium arsenide, gallium nitride, germanium, indium phosphide, or lithium-niobate. One selected from Lithium Niobate, Lithium Tantalate, Sapphire, Silica-Fused, Silicon, Silicon Carbide, and Silicon Germanium. A method of manufacturing a patterned thin film substrate, characterized in that the material is implemented.