KR101061731B1 - Film thin film forming apparatus and method - Google Patents

Abstract

The present invention relates to a film-like thin film forming apparatus and method, and more particularly, to a film-like thin film forming apparatus and method capable of continuously performing the outgassing of the film, the deposition of the thin film and the crystallization of the deposited thin film. .

The film-like thin film forming apparatus according to the present invention includes an outgassing chamber for outgassing a film to be processed; A deposition chamber for forming a thin film on the film to be processed fed from the outgassing chamber; And a crystallization chamber for crystallizing the thin film on the deposited film directly fed from the deposition chamber.

film. pellicle. Out-gassing. crystallization.

Description

Thin Film Forming Apparatus and Method {THIN FILM FORMING APPARATUS ON FILM}

The present invention relates to a film-like thin film forming apparatus and method, and more particularly, to a film-like thin film forming apparatus and method capable of continuously performing the outgassing of the film, the deposition of the thin film and the crystallization of the deposited thin film. .

In general, a roll-to-roll method is used to form a thin film on a film.

Referring to FIG. 1, a conventional thin film forming apparatus 100 is described. The first reel 111 in which an unwinding roll R1 is mounted, a loading chamber 10 in which a heater is provided, and a pretreatment for modifying a surface of a film are described. Transmittance for measuring the transmittance of the film 120, the first deposition chamber 130 is provided with the deposition means 132 and the drum 131 to form a silicon dioxide (SiO ₂ ) thin film, and the silicon dioxide thin film is formed A second deposition chamber 150 including a measurement chamber 140, an evaporation means 152 for forming an ITO thin film, and a drum 151, an examination chamber 160 for measuring storage or transmittance of a film, and the silicon dioxide The unloading chamber 170 is provided with a second reel 171 mounted with a winding roll R2 for winding a film in which a thin film and an ITO thin film are sequentially formed.

As described above, the conventional film-form thin film forming apparatus has an outgas for discharging water and the like contained in the film, but there is a problem that the degree is not sufficient depending on the film used. Therefore, there is a problem that the use of a film that is not sufficiently outgassing affects the vacuum degree of the chamber, the deposition uniformity, the adhesion of the deposited thin film, the resistance change of the deposited thin film over time, and the final crystallization.

In addition, there is a need for a process for crystallizing the thin film after the thin film is formed on the film, there is a problem that the equipment for the crystallization is provided separately complex equipment.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide a film-like thin film forming apparatus and method capable of continuously performing outgassing of a film, deposition of a thin film, and crystallization of the deposited thin film. Is in.

In order to solve the above technical problem, the film-form thin film forming apparatus according to the present invention includes an outgassing chamber for outgassing a film to be processed; And a deposition chamber disposed adjacent to the outgassing chamber to form a thin film on the film to be fed from the outgassing chamber.

The outgassing chamber may further include a first reel on which the first roll on which the target film is wound is mounted, and at least one heater on one side of the first roll.

And a second reel equipped with a second roll to feed and rewind the to-be-processed film wound on the first roll, wherein the heater is a movement path of the to-be-processed film fed from the first reel to the second reel. It is preferable to include a heater for heating out the to-be-processed film on the phase.

In addition, the outgassing chamber is preferably outgassing the film to be processed in a vacuum state.

In addition, it is preferable to further include a crystallization chamber disposed adjacent to the deposition chamber to crystallize the thin film on the deposited film directly fed from the deposition chamber.

The crystallization chamber may further include a third reel equipped with a third roll for winding the deposition film directly fed from the deposition chamber, and a fourth roll for feeding and rewinding the deposition film wound on the third roll. It is preferable to include a 4 reel, and a heater for crystallizing the thin film by heating the film on the movement path of the deposited film fed from the third reel to the fourth reel.

In addition, it is preferable to further include a drum that rotates in contact with the deposition film fed from the third reel to the fourth reel.

In addition, the drum is preferably further provided with a cooling means.

In addition, the crystallization chamber is preferable to crystallize the thin film at atmospheric pressure or positive pressure.

The film-like thin film forming method according to the present invention comprises the steps of 1) out-gassing the film to be processed; And 2) forming a thin film on the outgassed target film to form a deposited film.

In the step 1), it is preferable to exhaust the outgas by alternately forming the outgassing chamber with a positive pressure or an atmospheric pressure atmosphere and a vacuum atmosphere while the roll of the film to be processed is mounted inside the outgassing chamber. .

In addition, the outgassing chamber is supplied with a purge gas to form a positive pressure or an atmospheric pressure atmosphere, the purge gas is preferably 25 ~ 300 ℃.

In addition, in the step 1), after mounting the first roll of the film to be wound in the outgassing chamber, it is preferable to discharge the outgas by rotating the first roll while heating.

It is also preferable to heat the film to be processed while feeding the second roll.

In addition, after the step 2), 3) preferably further comprises the step of crystallizing the thin film by feeding the deposition film continuously.

In addition, the step 3), 3-1) winding the deposition film fed from the deposition chamber to a third roll; And 3-2) crystallizing the thin film by heating one surface of the deposition film while feeding the deposition film wound on the third roll with the fourth roll.

In addition, the step 3-2) is preferably performed while cooling the other surface of the deposition film.

According to the present invention, there is an effect that the outgassing of the film, the deposition of the thin film and the crystallization of the deposited thin film can be continuously performed.

Therefore, since the film is not required to be transported, the process time is shortened and the equipment area is reduced.

Hereinafter, with reference to the accompanying drawings will be described the configuration and operation of the embodiment according to the present invention.

Referring to FIG. 2, a first embodiment 1 according to the present invention includes an outgassing chamber 10, a pretreatment chamber 20 for modifying a surface of a film F0, and silicon dioxide (SiO ₂ ). A first deposition chamber 30 having a deposition means 32 and a drum 31 for forming a thin film, a transmittance measurement chamber 40 for measuring a transmittance of a film on which a silicon dioxide thin film is formed, and an deposition for forming an ITO thin film. A second deposition chamber 50 provided with the means 52 and the drum 51, an inspection chamber 60 for measuring the storage and transmittance of the film, and a crystallization chamber 70 are included.

The outgassing chamber 10 is to outgas the to-be-processed film F0, and more specifically, the first reel 11 to which the first roll R1 on which the to-be-processed film F0 is wound is mounted; The heater 12 is provided on both sides of the first roll (R1), respectively.

The crystallization chamber 70 is a second reel (71) for mounting a second roll (R2) to receive and wound the deposition film (F1) directly fed from the deposition chamber (30, 50), and the second roll (R2) A third reel 72 on which a third roll R3 for feeding and re-winding the deposition film F1 wound on the reel film is mounted, and a feeding path is provided between the second roll R2 and the third roll R3. It comprises an idle roller (73) for providing a pair of heaters (74) for applying heat to the deposition film (F1) fed through the idle roller (73).

Hereinafter, the operating state of the present embodiment and a method of forming a film thin film will be described.

First, the first roll R1 on which the film F0 is wound is mounted on the first reel 11 of the outgassing chamber 10, and the inside of the chamber is formed in a vacuum state. In this state, the pair of heaters 12 are operated while the first reel 11 is rotated to discharge the outgas, and the chamber is exhausted to exhaust the outgas. At this time, since the film F0 is in a state where the front end is not connected anywhere, the film F0 is rotated without being fed (see FIG. 3).

Alternatively, you can outgas in another way. Specifically, in the state in which the first roll R1 is mounted on the first reel 11 of the outgassing chamber 10, the outgassing chamber 10 is alternately replaced with a vacuum atmosphere and a positive pressure or atmospheric pressure atmosphere. It is to exhaust and exhaust the outgas while forming. At this time, the purge gas is supplied to form a positive pressure or an atmospheric pressure atmosphere, and the purge gas is preferably 25 to 300 ° C.

When the outgassing of the film F0 is completed in this manner, the front end portion of the film F0 is pretreated in the chamber 20, the first deposition chamber 30, the transmittance measurement chamber 40, The second deposition chamber 50 and the test chamber 60 are connected to the connection film F2 having one end connected to the second roll R2 of the crystallization chamber 70.

In this state, the second reel 71 is rotated to wind the film on the second roll R2 (the film to be processed on the first roll), thereby forming a thin film on the film to be processed. When the process is performed in this manner, the deposition film F1 is wound on the second roll R2 of the crystallization chamber 70 (see FIG. 4).

Next, the deposition film F1 is cut, and the tip of the deposition film F1 wound on the second roll R2 is connected to the third roll R3 via an idle roller 73. In this state, the film is wound on the third roll R3 while feeding the deposited film wound on the second roll R2. At this time, the heater 74 heats the deposition film F1 on the feeding path to crystallize the thin film (see FIG. 5).

On the other hand, the configuration of the outgassing chamber 10 may be the same as the crystallization chamber 70. That is, the second roll R2 and the third roll R3 are mounted, and the out-of-process film F0 wound on the third roll R3 via the idle roller 73 is heated by the heater 74. It can be fresh. Furthermore, the apparatus may be configured to include one such chamber, and to use it as an outgassing chamber before deposition, and to use as a crystallization chamber after deposition.

Another embodiment of the crystallization chamber 80 will be described with reference to FIG. 6. As shown, it can be seen that a rotatable drum 84 is provided between the second reel 81 and the third reel 82. That is, the deposition film F1 fed from the second roll R2 and wound onto the third roll R3 is in contact with the drum 84 for a predetermined period on the feeding path. The drum 84 is provided with a cooling means (not shown), for example, by forming a flow path (not shown) inside the drum 84, and cooling the drum 84 by circulating a refrigerant in the flow path You can do it. This is to heat the heater for crystallization of the thin film, which is to prevent the interior of the chamber is too hot to damage the film and the thin film.

1 is a schematic view showing a conventional film-form thin film forming apparatus.

2 is a schematic view showing a film-form thin film forming apparatus according to the present invention.

3 to 5 show the operating state of the apparatus shown in FIG.

Figure 6 shows another embodiment according to the present invention.

Claims (17)

Out-gassing chamber for outgassing the film to be processed (Out-gassing Chamber); A deposition chamber disposed adjacent to the outgassing chamber and forming a thin film on the film to be fed from the outgassing chamber; And And a crystallization chamber disposed adjacent to the deposition chamber and crystallizing the thin film on the deposited film directly fed from the deposition chamber. The method of claim 1, The outgassing chamber, And a first reel on which the first roll on which the film to be processed is wound is mounted, and at least one heater provided on one side of the first roll. The method of claim 2, A second reel mounted with a second roll to feed and rewind the to-be-processed film wound on the first roll, And the heater comprises a heater for outgassing the to-be-processed film on a moving path of the to-be-processed film fed from the first reel to the second reel. The method of claim 1, And the outgassing chamber outgassing the film to be processed in a vacuum state. delete The method of claim 1, The crystallization chamber, A third reel equipped with a third roll winding the deposition film directly fed from the deposition chamber; A fourth reel mounted with a fourth roll for feeding and rewinding the deposition film wound on the third roll; And a heater for crystallizing the thin film by heating the film on a movement path of the deposition film fed from the third reel to the fourth reel. The method of claim 6, And a drum rotating in contact with the deposition film fed from the third reel to the fourth reel. The method of claim 7, wherein The drum is thin film forming apparatus, characterized in that the cooling means is further provided. The method of claim 1, The crystallization chamber is a film-form thin film forming apparatus, characterized in that the crystallization of the thin film at normal or positive pressure. 1) out-gassing the film to be processed; 2) forming a deposited film by forming a thin film on the outgassed target film; And 3) crystallizing the thin film by continuously feeding the deposited film; Step 3), 3-1) winding the deposition film on a third roll; And 3-2) crystallizing the thin film by heating one surface of the deposited film while feeding the deposited film wound on the third roll with a fourth roll. The method of claim 10, Step 1), A method of forming a thin film according to claim 1, wherein the outgassing chamber is alternately formed with a positive pressure or an atmospheric pressure atmosphere and a vacuum atmosphere in a state where a roll on which the film to be processed is wound is mounted inside the outgassing chamber. The method of claim 11, A purge gas is supplied to the outgassing chamber to form a positive pressure or an atmospheric pressure atmosphere, and the purge gas is 25 to 300 ° C. The method of claim 10, Step 1), And attaching the first roll of the film to be processed to the inside of the outgassing chamber, and rotating the first roll to discharge the outgas. The method of claim 13, The film-form thin film formation method characterized by heating while feeding the said to-be-processed film with a 2nd roll. delete delete The method of claim 10, Step 3-2) is a film-like thin film forming method, characterized in that performed while cooling the other surface of the deposition film.

Images