KR101058453B1 - Liquid crystal display substrate and manufacturing method thereof - Google Patents

Abstract

In the present invention, in a structure in which a black matrix is formed on an array substrate (for example, a COT structure), a plurality of island patterns are spaced apart from each other in order to prevent occurrence of RC delay and image quality deterioration caused by the black matrix. By forming a black matrix with a structure, and including light blocking means in the spaced intervals between the black matrix, it is possible to improve the image quality by preventing the RC delay through the effect of increasing the line resistance of the black matrix, and to broaden the choice of black matrix material selection It can have an effect.

Description

Substrate for liquid crystal display and its manufacturing method {Panel for Liquid Crystal Display Device and Method for fabricating the same}             

1 is a view schematically showing a general liquid crystal display device.

FIG. 2 is a cross-sectional view taken along the line II-II of FIG. 1. FIG.

3A and 3B are views of a general COT liquid crystal display, and FIG. 3A is a plan view, and FIG. 3B is a cross-sectional view showing a section cut along the cutting line " IIIb-IIIb "

 4A and 4B show a typical stripe type black matrix pattern structure.

5A to 5C are views of a COT structure liquid crystal display including a wiring having protrusions according to the first embodiment of the present invention. FIG. 5A is a plan view, and FIGS. 5B and 5C are cut lines of FIG. Sectional drawing which shows the cross section cut | disconnected according to "Vb-Vb" and "Vc-Vc".

6A and 6B are views of a COT structure liquid crystal display device including a light blocking pattern according to a first embodiment of the present invention. FIG. 6A is a plan view and FIG. 6B is a cut line VIb-VIb of FIG. 6A. Cross section showing a cut section.

7A to 7C are diagrams of a liquid crystal display (COT) structure including a wiring having protrusions according to a second exemplary embodiment of the present invention. FIG. 7A is a plan view, and FIGS. 7B and 7C are cut lines of FIG. 7A. Section view showing a cross section cut in accordance with "VIIb-VIIb", "VIIc-VIIc".

8A and 8B are diagrams of a COT structure liquid crystal display including a separate light blocking pattern according to a second embodiment of the present invention. FIG. 8A is a plan view and FIG. 8B is a cut line VIIIb-VIIIb of FIG. 8A. A cross section showing a section cut in accordance with FIG.

9A and 9B are plan views of a COT structure liquid crystal display device according to a third embodiment of the present invention;

10A and 10B are diagrams for explaining line resistance characteristics according to a pattern structure of a black matrix.

11A to 11G and 12A to 12G are diagrams illustrating a manufacturing process of a COT structure liquid crystal display device according to a fourth exemplary embodiment of the present invention. FIGS. 11A to 11G are plan views and FIGS. 12A to 12G are plan views. Sectional drawing which cut according to the cutting line XII-XII of each manufacturing process.

<Brief description of the main parts of the drawing>

110: substrate 112: gate wiring

124: data wiring 125: protrusion

134a, 134b, 134c: Red, Green, Blue Color Filter

134: color filter 138: black matrix                 

146 pixel electrodes

T: thin film transistor

The present invention relates to a liquid crystal display device, and more particularly, to a liquid crystal display device having a structure in which a black matrix is formed on a substrate on which a thin film transistor is formed, and a manufacturing method thereof.

In general, a liquid crystal display device displays an image by using optical anisotropy and birefringence characteristics of liquid crystal molecules. When an electric field is applied, the alignment of liquid crystals is changed, and the characteristics of light transmission vary according to the arrangement direction of the changed liquid crystals.

In general, a liquid crystal display device is formed by arranging two substrates on which electric field generating electrodes are formed so that the surfaces on which the two electrodes are formed face each other, injecting a liquid crystal material between the two substrates, and then applying a voltage to the two electrodes. By moving the liquid crystal molecules by the electric field is a device that represents the image by the transmittance of light that varies accordingly.

1 is a view schematically showing a general liquid crystal display device.

As shown, a general color liquid crystal display device 11 includes a color filter 7 and a color filter 8 including a black matrix 6 formed between a sub color filter 8 and each sub color filter 8. The upper substrate 5 having the common electrode 18 deposited thereon, the pixel region P, and the pixel electrode 17 and the switching element T formed in the pixel region, and the pixel region P The liquid crystal 14 is filled between the lower substrate 22 and the upper substrate 5 and the lower substrate 22 on which array wiring is formed.

The lower substrate 22 is also referred to as an array substrate, and the thin film transistor T, which is a switching element, is positioned in a matrix type, and the gate wiring 13 crosses the plurality of thin film transistors TFT. ) And data wirings 15 are formed.

In this case, the pixel area P is an area defined by the gate wiring 13 and the data wiring 15 intersecting. A transparent pixel electrode 17 is formed on the pixel area P as described above.

The pixel electrode 17 uses a transparent conductive metal having relatively high light transmittance such as indium-tin-oxide (ITO).

A storage capacitor C _ST connected in parallel with the pixel electrode 17 is formed on the gate wiring 13, and a part of the gate wiring 13 is used as the first electrode of the storage capacitor C _ST . As the second electrode, an island-shaped source / drain metal layer 30 formed of the same material as the source and drain electrodes is used.

In this case, the source / drain metal layer 30 is configured to be in contact with the pixel electrode 17 to receive a signal of the pixel electrode.

As described above, when the upper color filter substrate 5 and the lower array substrate 22 are bonded to each other to produce a liquid crystal panel, defects in light leakage due to a bonding error between the color filter substrate 5 and the array substrate 22 may occur. It is very likely to occur.

Hereinafter, with reference to the following drawings.

FIG. 2 is a cross-sectional view taken along the line II-II of FIG. 1.

As described above, the first substrate 22, which is an array substrate, and the second substrate 5, which is a color filter substrate, are spaced apart from each other, and the liquid crystal layer 14 is disposed between the first and second substrates 22, 5. This is located.

The thin film transistor T including the gate electrode 32, the active layer 34, the source electrode 36, and the drain electrode 38 is disposed on the array substrate 22, and the thin film transistor T is disposed on the thin film transistor T. A protective film 40 is configured to protect it.

In the pixel region P, a transparent pixel electrode 17 is formed in contact with the drain electrode 38 of the thin film transistor T, and a storage capacitor C _ST connected in parallel with the pixel electrode 17 includes a gate wiring ( 13) is configured on the top.

The upper substrate 5 includes a black matrix 6 corresponding to the gate wiring 13, the data wiring 15, and the thin film transistor T, and corresponds to the pixel region P of the lower substrate 22. The color filter 8 is comprised.

In this case, the general array substrate is configured such that the data line 15 and the pixel electrode 17 are spaced apart at a predetermined interval IIIa to prevent vertical cross talk, and the gate line 13 and the pixel electrode are spaced apart from each other. In addition, it is configured to be spaced apart a certain interval (IIIb).                         

Since the spaces A and B spaced apart between the data line 15 and the gate line 13 and the pixel electrode 17 are regions where light leakage occurs, a black matrix formed on the upper color filter substrate 5 matrix) (6) will cover this part.

In addition, the black matrix 6 formed on the thin film transistor T serves to block the light so that the light radiated from the outside does not affect the active layer 34 through the passivation layer 40. .

However, a misalignment may occur during the process of bonding the upper substrate 5 and the lower substrate 22. In view of this, a margin of a constant value is determined when designing the black matrix 6. Since the design is carried out with reference to), the aperture ratio decreases by that amount.

In addition, when the bonding error beyond the margin occurs, there is often a case of light leakage defects in which the light leakage regions IIIa and IIIb are not covered by the black matrix 6.

In this case, since the light leakage appears outside, there is a problem that the image quality is deteriorated.

In order to solve the above problems, it is an object of the present invention to provide a liquid crystal display device having a structure that can minimize the bonding margin to increase the transmittance.

To this end, the present invention is to provide a COT structure liquid crystal display device having a structure in which a color filter element is formed on a substrate on which a thin film transistor is formed.                         

Hereinafter, a laminated structure of a general COT liquid crystal display device will be described with reference to the drawings.

3A and 3B are views of a general COT liquid crystal display, and FIG. 3A is a plan view, and FIG. 3B is a cross-sectional view illustrating a cross section taken along the cutting line " IIIb-IIIb "

As shown, the gate wiring 52 and the data wiring 62 are formed on the substrate 50 so as to cross each other, and the gate electrode 54 at the intersection of the gate wiring 52 and the data wiring 62. And a thin film transistor T formed of the semiconductor layer 60, the source electrode 64, and the drain electrode 66. An interlayer insulating film 68 is formed in a region covering the thin film transistor T. The color filter layer 70 having a structure in which the red, green, and blue color filters 70a, 70b, and 70c are sequentially arranged in the pixel region P defined by the intersection of the gate wiring 52 and the data wiring 62. ), A black matrix 74 having an integral pattern structure having the pixel region P as an open portion 72 is formed in an area covering the color filter layer 70, and the color filter layer 70 and the black matrix are formed. The protective layer 76 is formed in the area | region which covers 74, and the drainage upper part of the protective layer 76 is provided. The pixel electrode 78 connected to the phosphorus electrode 66 is formed.

The pixel electrode 78 is connected to the drain electrode 66 through a drain contact hole 77 having the color filter layer 70, the interlayer insulating film 68, and the protective layer 76 corresponding to each other. .

The black matrix 74 shown in FIG. 3A has a matrix type structure covering both the gate wiring part and the data wiring part. The pattern structure of the black matrix 74 may be determined according to the pattern type of the color filter.

4A and 4B illustrate a typical stripe type black matrix pattern structure. In the COT structure, since the color filter layer and the black matrix are formed on the array element including the metal wiring, the liquid crystal is formed by the metal wiring and the color filter layer. Since light in the non-driven area may be blocked, as shown in FIG. 4A, the black matrix 82 is formed in a horizontal stripe type in a region covering a horizontal color boundary of the color filter layer 80. Alternatively, as illustrated in FIG. 4B, the black matrix 86 is formed in a vertical stripe type in an area covering the vertical color-specific boundary of the color filter layer 84.

As described above, the existing black matrix has a stripe type or a matrix type without distinction for each pixel and is formed in an integrated pattern structure.

As the black matrix material for the COT structure, a light blocking resin material is used. When a low resistance black matrix material is used, a resistance-capacitance delay is generated by electrical coupling with the metal wiring. There is a disadvantage that the image quality characteristics are degraded.

In order to solve this drawback, the present invention is to prevent the occurrence of RC delay, image quality degradation, etc. caused by the black matrix in the liquid crystal display device (for example, COT structure) to form a black matrix on the array substrate. do.

To this end, the present invention intends to form a structure that can increase the line resistance of the black matrix, for example, to form a black matrix in an island pattern structure in pixel units or subpixel units. In the spaced intervals between the black matrix patterns, the wiring pattern structure of the corresponding region is changed or an additional light blocking pattern is formed.

In order to achieve the above object, in a first aspect of the present invention, there is provided a semiconductor device comprising: a gate wiring formed in a first direction on a substrate; A data line formed in a second direction crossing the first direction; A thin film transistor formed at an intersection point of the gate line and the data line; A region in which the gate lines and the data lines cross each other is defined as a pixel area, and a color filter layer having a structure in which red, green, and blue color filters are sequentially arranged on the thin film transistor for each pixel area; A black matrix having a plurality of island pattern structures spaced apart from each other by a predetermined distance corresponding to the boundary of the pixel region and the thin film transistor; And a pixel electrode overlapping the black matrix and the edge thereof and connected to the thin film transistor and formed on the color filter layer for each pixel region, and in a spaced area between island patterns of the black matrix, a formation width corresponding to the black matrix. It provides a substrate for a liquid crystal display device comprising a light blocking means having.

The black matrix is positioned spaced apart from each other in the pixel area unit.

The black matrix is formed of a stripe type structure located in the first direction, is formed of a stripe type structure located in the second direction, or is a matrix type structure located in both the first and second directions. Characterized in that formed.                     

At the position corresponding to the space between the black matrices, a protruding portion is formed in the gate wiring so that the gate wiring portion having the protruding portion forms light blocking means, and an overlapping distance of the pixel electrode and the protruding portion is greater than at least 1 μm. The light blocking means comprises a light blocking pattern made of the same material in the same process as the data wiring, an insulating layer is interposed between the gate wiring and the light blocking pattern, and the light blocking pattern and the pixel. The overlap distance between electrodes has a value larger than the thickness value of the said insulating layer at least.

At a position corresponding to the space between the black matrices, protrusions are formed on both sides of the data wire, and the data wire part having the protrusions constitutes light blocking means, and the overlapping distance between the pixel electrode and the protrusions is at least. The light blocking means is selected from a value larger than 1 μm, and the light blocking means is a light blocking pattern made of the same material in the same process as the gate wiring.

The separation distance between the black matrices is characterized in that selected from a value greater than at least 3 ㎛.

delete

According to a second aspect of the present invention, data defining a pixel region on a substrate is located in a first direction and in a second direction crossing the first direction in an insulated state from the gate wiring. Forming a wiring and a thin film transistor positioned at an intersection of the gate wiring and the data wiring; Forming a color filter layer having a structure in which red, green, and blue color filters are sequentially arranged for each pixel area on the thin film transistor; Forming a black matrix having a plurality of island pattern structures spaced apart from each other in the non-pixel region including the color-specific boundary of the color filter layer and the thin film transistor; And forming a pixel electrode connected to the thin film transistor, and forming light blocking means having a formation width corresponding to the black matrix in the interval between the black matrices. It provides a manufacturing method.

The black matrix is formed of a stripe type structure located in the first direction, a stripe type structure located in the second direction, or a matrix type structure located in both the first and second directions. Characterized in that.

In a position corresponding to the space between the black matrices, a protrusion is formed on the gate line, and the gate line having the protrusion forms a light blocking unit, and the forming of the light blocking unit includes: Forming a light blocking pattern using the same material in the same process, and protruding portions are formed on both sides of the data wiring at positions corresponding to the spaces between the black matrices, and the data wiring portion having the protrusion It is characterized by forming a blocking means.

The forming of the light blocking means may include forming a light blocking pattern using the same material in the same process as the data wiring.

The separation distance between the black matrices is selected from a value greater than at least 3 μm,                     

delete

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

First Embodiment

The present embodiment relates to a COT structure liquid crystal display device including a vertical stripe type black matrix pattern, wherein the black matrices are formed to be spaced apart from each other for each pixel area, and the protrusions are formed on the corresponding wirings in the intervals between the black matrices. Embodiments of a structure having a separate light blocking pattern are provided.

5A to 5C are views of a COT structure liquid crystal display including a wiring having protrusions according to the first embodiment of the present invention. FIG. 5A is a plan view, and FIGS. 5B and 5C are cut lines of FIG. It is sectional drawing which shows the cross section cut | disconnected according to "Vb-Vb" and "Vc-Vc".

As illustrated, the gate wiring 112 is formed on the substrate 110 in the first direction, the data wiring 124 is formed in the second direction, and the gate wiring 112 and the data wiring 124 are formed. The thin film transistor T is formed at the intersection of the intersections, and the intersection area of the gate line 112 and the data line 124 is defined as the pixel area P. The pixel area P is red and green for each pixel area P. FIG. The color filter layer 134 is formed in a structure in which the blue color filters 134a, 134b, and 134c are arranged in sequence. A plurality of black matrices 138 having island pattern structures spaced apart from each other are formed. The pixel electrode 146 is formed in each pixel region P by being connected to the thin film transistor T.

In the present exemplary embodiment, the black matrix 138 having a pattern structure separated from each other by the pixel area P is illustrated, but one pixel area P forms one subpixel, and the red, green, and blue subpixels are used. The structure of one pixel may include a case of forming an island pattern structure in pixel units.

The data line 124 has a width smaller than that of the black matrix 138 at a position corresponding to the black matrix 138, but is on both sides of the data line 124 positioned in a spaced apart section of the black matrix 138. In this section, a protrusion 125 having a forming width corresponding to the black matrix 138 is formed.

In this embodiment, in order to lower the resistance of the black matrix 138, the black matrix 138 is formed in a separated structure in the pixel region P unit, and instead, the light leakage in the section in which the black matrix 138 is omitted. Protrusions 125 are provided on both sides of the data line 124 for development or color classification.

FIG. 5B shows a data line 124 having a formation width of "w1" on the substrate 110, and a formation width of "w2" having a value larger than "w1" above the data line 124. And a black matrix 138 is formed in an area covering the data line 124.

The pixel electrode 146 is formed on the black matrix 138 while maintaining a predetermined overlap distance d1 from the black matrix 138.

In contrast, in FIG. 5C, a data line 124 having a width of "w3" corresponding to "w2" is formed, and a separate black matrix is formed at a position corresponding to the data line 124. It is omitted. Protruding portions 125 having a formation width corresponding to the black matrix (138 in FIG. 5B) are extended on both sides of the data line 124 having the formation width of “w3”. The protrusion 125 corresponds to a kind of black matrix replacement pattern. That is, the overlap distance d2 between the protrusion of the data line and the pixel electrode preferably has a range corresponding to the overlap distance “d1” of FIG. 5B.

6A and 6B are views of a COT structure liquid crystal display device including a light blocking pattern according to a first embodiment of the present invention. FIG. 6A is a plan view and FIG. 6B is a cut line VIb-VIb of FIG. 6A. Sectional drawing which shows the cut | disconnected cross section, centering on the characteristic part distinguished from the said FIG. 5A-5C.

As illustrated, the light blocking pattern 152 having an island pattern structure having a formation width corresponding to the black matrix 150 is formed in the interval between the black matrices 150.

The light blocking pattern 152 has a formation width corresponding to the black matrix 150 at a position covering a portion of the data wiring 154 exposed in the interval between the black matrices 150 and the data wiring 154. And formed in a different process from the data line 154 to be insulated from the data line 154.

In this case, the overlapping distance d3 between the light blocking pattern 152 and the pixel electrode 156 shown in FIG. 6B is determined according to the incident angle of the backlight light, but is typically ± 45 °.

d3 ≥1 μm

It is desirable to satisfy the relational expression of.

Second Embodiment

The present embodiment relates to a COT structure liquid crystal display device including a horizontal stripe type black matrix pattern, and includes a protrusion or a separate light blocking pattern in a wiring in a section in which the black matrix pattern is omitted. Example.

7A to 7C are diagrams of a liquid crystal display (COT) structure including a wiring having protrusions according to a second exemplary embodiment of the present invention. FIG. 7A is a plan view, and FIGS. 7B and 7C are cut lines of FIG. Sectional drawing which shows the cross section cut | disconnected according to "VIIb-VIIb" and "VIIc-VIIc", The description of the part which overlaps with the said 1st Example is simplified.

As illustrated, a plurality of black matrices 238 having an island pattern structure are formed to be spaced apart from each other in each pixel region P at a position covering the gate wiring 212 in the first direction on the substrate 210.

In the interval between the black matrices 238, the protruding portion 213 is branched on one side of the gate wiring 212 to have a formation width corresponding to the black matrix 238.

Hereinafter, FIG. 7B illustrates a cross-sectional stacked structure of a region including the black matrix 238, and FIG. 7C illustrates a cross-sectional stacked structure in a spaced interval between the black matrices 238.

In FIG. 7B, a gate wiring 212 having a capacitor electrode 216 is formed on one side of the substrate 210, and a black matrix 238 is formed in an area covering the gate wiring portion except for the capacitor electrode 216. The pixel electrode 246 is formed in the pixel region P while maintaining a constant overlap distance d4 with the black matrix 238.

The capacitor electrode 216 and the pixel electrode 246 form a storage capacitor C _ST with an insulator interposed therebetween.

FIG. 7C illustrates a region corresponding to the black matrix separation interval, in which a protrusion 213 is formed on one side of the gate wiring 212. The protrusion 213 corresponds to one side that does not include the capacitor electrode 216, and the protrusion 213 corresponds to a pattern formed to block light leakage in a region where the black matrix is omitted, and the left pixel on the drawing The overlap distance d5 with the electrode 246 is preferably selected from values satisfying the following relational expression.

d5 ≥1 μm

8A and 8B are diagrams illustrating a COT structure liquid crystal display device including a separate light blocking pattern according to a second embodiment of the present invention. FIG. 8A is a plan view and FIG. 8B is a cut line VIIIb of FIG. 8A. Sectional drawing which cut | disconnected according to -VIIIb, and demonstrates centering on the characteristic part distinguished from FIG. 7A-7C.

As illustrated, the black matrix 252 is formed in a horizontal stripe type in an area covering the gate wiring 250. A plurality of the black matrix 252 is arranged in an island pattern structure spaced apart from each other, and the black matrix 252 is insulated from the gate wiring 250 in a different process from the gate wiring 250 in a spaced interval between the black matrices 252. A light blocking film 254 having a pattern structure corresponding to the black matrix 252 is formed.

In the present exemplary embodiment, since a portion of the gate wiring 250 forms a capacitor electrode 251, the black matrix 252 is formed in an area covering the gate wiring except for the capacitor electrode 251.

For example, the light blocking layer 254 may be formed of the same material in the same process as the data line 260.

At this time, the overlap distance "d6" between the light blocking pattern 254 and the pixel electrode 270 illustrated in FIG. 8B has a close relationship with the thickness "dd1" of the first insulating layer 251, and at least

d6 ≥dd1

It is preferable that the relation

Third Embodiment                     

This embodiment is an embodiment of a COT structure liquid crystal display device including a matrix type black matrix pattern, and includes a black matrix having an independent pattern structure for each pixel region, and has a structure in which protrusions are formed in the wirings at intervals between the black matrices. Or an embodiment of a structure including a separate light blocking pattern.

9A and 9B are plan views of a liquid crystal display (COT) structure according to a third embodiment of the present invention. The cross-sectional stacked structure may be applied in the same manner as the first and second embodiments, and thus the cross-sectional view and description thereof will be omitted. It demonstrates centering on a flat structure.

FIG. 9A illustrates a black matrix 338 which is positioned in a region covering non-pixel regions except for the pixel region P, is separated from each other by the pixel regions P, and has a matrix structure as a whole.

The gate line 312 and the data line 324 have first and second protrusions 330 and 331, respectively, in the interval between the black matrices 338. The first protrusion 330 is positioned at another side of the gate line 312 including the storage capacitor C _ST , and the second protrusion 331 is symmetrically with each other at both sides of the data line 324. Located.

9B, first and second light blocking patterns 352 and 354 having a formation width corresponding to the black matrix 350 are formed at positions corresponding to spaced intervals between the black matrices 350, respectively.

The first light blocking pattern 352 is a pattern formed in a region of the gate wiring portion covering the gate wiring portion excluding the capacitor electrode 356, and the second light blocking pattern 358 is a pattern formed in the data wiring portion. Corresponds to

The black matrix according to the first to third embodiments is formed of a combination of the black matrix pattern of the island pattern structure, the black matrix of the pattern structure is a stripe type covering only one of the data wiring portion or the gate wiring portion In addition, it selects from the matrix type which covers both a data wiring part and a gate wiring part.

In addition, the stripe type or matrix type may include an area covering the thin film transistor. The black matrix according to the first to third embodiments is an example including a black matrix pattern for blocking a thin film transistor on an opposing substrate.

The distance between the black matrix patterns according to the first to third embodiments is inversely proportional to the coupling area of the black matrix and the wiring, but the visibility may be degraded due to the increase in surface reflection due to the exposure of the wiring. Therefore, it is applied according to the minimum separation distance rule, and in general, a separation distance of 3 μm or less is possible.

10A and 10B are diagrams for explaining line resistance characteristics according to the pattern structure of the black matrix, and FIG. 10A is for the integrated pattern structure black matrix 370 and FIG. 10B is for the island pattern structure black matrix 380. In the related art, as the black matrix 370 is formed in an integrated pattern structure as shown in FIG. 10A, the black matrix 370 and the insulating layer 372 are sequentially stacked on the substrate 360. In the present invention, the black matrix 380 is formed in a separated pattern structure as shown in FIG. 10B, and the insulating layer 372 is formed in a region covering the black matrix 380 including a spaced interval between the black matrices 380. Therefore, the line resistance of the black matrix 380 may be increased by inserting the insulating layer 372 between the black matrices 380.

That is, when the wire resistance value of the black matrix according to FIG. 10A is R and the wire resistance value according to FIG. 10B is R ',

R 〈R '

Can be established.

Accordingly, in the present invention having the black matrix structure according to FIG. 10B, the RC delay can be prevented by reducing the coupling at the wiring portion corresponding to the black matrix by the effect of increasing the line resistance of the black matrix. The image quality can be improved.

Further, in the present invention, the black matrix is formed by dividing the island pattern structure, thereby blocking the flow of the stray charges to the peripheral pixels in the black matrix, which changes according to the voltage applied to the wiring, so that the resistance of the black matrix in the actual panel is reduced. You get an increased effect. That is, the line resistance with a larger resistance of the insulating layer filled in the interval between the black matrix patterns than the black matrix can be increased.                     

According to the present invention, a material having a resistance of 1 × 10 ⁶ Ω or more is applied. In order to prevent light leakage in an area not blocked by the black matrix, a black matrix is formed in an island pattern structure. It provides a structure to form a protrusion or to form a separate light blocking pattern.

Hereinafter, among the vertical stripe type, the horizontal stripe type, and the matrix type black matrix pattern structure, the black matrix is selectively formed only in an area covering the data wiring part.

Fourth Embodiment

This embodiment is an embodiment of the manufacturing process of the vertical stripe type black matrix pattern structure COT liquid crystal display device.

11A to 11G and 12A to 12G are diagrams illustrating a manufacturing process of a COT structure liquid crystal display device according to a fourth exemplary embodiment of the present invention. FIGS. 11A to 11G are plan views and FIGS. It is sectional drawing which shows the cross section cut | disconnected according to the cutting line XII-XII of each manufacturing process.

11A and 12A illustrate forming a gate wiring 412 having a gate electrode 414 in a first direction on a substrate 410, and forming a gate insulating film 420 in an area covering the gate wiring 412. And forming the semiconductor layer 422 in the region covering the gate electrode 414 on the gate insulating layer 420.

11B and 12B are steps of forming the data line 424 in a second direction crossing the first direction. The data line 424 is formed in a pattern having a protrusion 425 having a wider width than any other area of the data line 424 in an arbitrary region.

The above-described arbitrary region corresponds to a region corresponding to a spaced interval between black matrix patterns in a subsequent process.

The method may include forming a source electrode 426 connected to the data line 424 and a drain electrode 428 spaced apart from the source electrode 426, wherein the source electrode 426 and The drain electrode 428 is positioned to overlap both sides of the semiconductor layer 422, and the gate electrode 414, the semiconductor layer 422, the source electrode 426, and the drain electrode 428 form a thin film transistor T. .

11C and 12C illustrate forming an interlayer insulating layer 432 in a region covering the thin film transistor T. FIGS. 11D and 12D are positioned in a pixel region P above the interlayer insulating layer 432. A color filter layer 436 having a first contact hole 434 exposing the drain electrode 428 and having red, green, and blue color filters 436a, 436b, and 436c arranged in this order is formed.

The color filter layer 436 may be formed by a manufacturing process that is not separated between pixel areas between the same colors.

11E and 12E form a plurality of black matrices 438 that form an island pattern structure and are spaced apart from each other in an area covering the data line 424 forming portion.

The pattern portion covering the color boundary of the color filter layer 436 of the black matrix 438 substantially corresponds to an area covering the data line 424.

In addition, the separation area XIII between the black matrices 438 is located in an area corresponding to the protrusion 425 described above.

The separation distance between the black matrices 438 is preferably selected within a range in which the display quality is not degraded. For example, the distance between the black matrices 438 is 3 μm or less.

11F and 12F are located in an area covering the black matrix 438 and at a position corresponding to the first contact hole 434 of 11c, the drain electrode 428 together with the interlayer insulating film 432. Forming a protective layer 442 having a second contact hole exposing the second contact hole.

The first and second contact holes form a drain contact hole 444.

The material constituting the protective layer 442 is selected from an insulating material having a low dielectric constant value, preferably an organic insulating material, more preferably selected from either an acrylic organic material or BCB (benzocyclobutene). .

11G and 12G are steps of forming the pixel electrode 446 connected to the drain electrode 428 through the drain contact hole 444 on the passivation layer 442.                     

The edge portion of the pixel electrode 446 is formed to overlap with the neighboring black matrix 438 at a predetermined interval in order to prevent light leakage in a region where the liquid crystal is not driven.

The pixel electrode 446 is positioned to overlap the protrusion 425 of the data line 424 in the “XIII” region, which is a spaced interval between the black matrices 438. That is, the overlap distance between the black matrix 438 and the pixel electrode 446 and the overlap distance between the protrusion 425 and the pixel electrode 446 of the data line 424 may be selected from corresponding values.

However, the present invention is not limited to the above embodiments, and various changes can be made without departing from the spirit of the present invention.

Although not shown in detail in the drawings, a liquid crystal display according to the present invention includes a first substrate having an array element including a black matrix and a thin film transistor, a second substrate disposed to face the first substrate, and a first and second substrate. It consists of a liquid crystal layer interposed between them. For example, the first substrate may include a COT structure for forming a color filter layer on a substrate on which a thin film transistor is formed, and corresponds to a substrate structure for forming a black matrix in a region covering the gate line and the data line.

As described above, in a liquid crystal display device having a structure in which a black matrix is simultaneously formed on a substrate on which a gate wiring and a data wiring are formed, a black matrix is applied to solve the RC delay and the deterioration of image quality according to the resistance characteristics of the black matrix. By forming the island pattern structure, the wiring load can be reduced through the effect of increasing the black resistance of the black matrix, and the black matrix material can be expanded.

Claims (24)

A gate wiring formed on the substrate in a first direction; A data line formed in a second direction crossing the first direction; A thin film transistor formed at an intersection point of the gate line and the data line; A thin film transistor formed at an intersection point of the gate line and the data line; An area where the gate line and the data line cross each other is defined as a pixel area, and the red, green, and blue color filters are formed in a structure in which red, green, and blue color filters are sequentially arranged on the thin film transistor for each pixel area. A color filter layer that is formed without being separated for each pixel area between the same colors; A black matrix having a plurality of island pattern structures spaced apart from each other by a predetermined distance corresponding to the boundary of the pixel region and the thin film transistor; A pixel electrode overlapping the black matrix and an edge thereof and connected to the thin film transistor and formed on the color filter layer for each pixel region And light blocking means having a formation width corresponding to that of the black matrix in an area between the island patterns of the black matrix. The method of claim 1, And the black matrix is spaced apart from each other in units of the pixel area. The method of claim 1, And the black matrix is formed in a stripe type structure located in the first direction. The method of claim 1, And the black matrix is formed in a stripe type structure located in the second direction. The method of claim 1, The black matrix is a substrate for a liquid crystal display device having a matrix type structure that is located in both the first and second directions. The method of claim 3, wherein And a protruding portion is formed in the gate wiring at a position corresponding to the space between the black matrices, and the gate wiring portion having the protruding portion forms a light blocking means. The method of claim 6, And an overlapping distance of the pixel electrode and the protrusion is selected from a value larger than at least 1 μm. The method of claim 3, wherein And the light blocking means comprises a light blocking pattern made of the same material in the same process as the data wiring. The method of claim 8, An insulating layer is interposed between the gate wiring and the light blocking pattern, and an overlapping distance between the light blocking pattern and the pixel electrode has a value at least greater than a thickness value of the insulating layer. The method of claim 4, wherein And projections extending on both sides of the data line, and the data line part having the protrusions constitutes light blocking means at a position corresponding to the space between the black matrices. 11. The method of claim 10, And an overlap distance between the pixel electrode and the protrusion is selected from a value larger than at least 1 μm. The method of claim 4, wherein The light blocking means is a light blocking pattern made of the same material in the same process as the gate wiring. The method of claim 1, Wherein the separation distance between the black matrices is selected from a value larger than at least 3 μm. delete A gate wiring located in a first direction on the substrate, a data wiring positioned in a second direction crossing the first direction in an insulated state from the gate wiring, and defining a pixel region; and the gate wiring and data Forming a thin film transistor positioned at an intersection point of the wiring; Forming a color filter layer in which red, green, and blue color filters are sequentially arranged on the thin film transistor for each pixel region, and the red, green, and blue color filters are connected to each other without being separated for each pixel region; ; Forming a black matrix having a plurality of island pattern structures spaced apart from each other in the non-pixel region including the color-specific boundary of the color filter layer and the thin film transistor; Forming a pixel electrode connected to the thin film transistor And forming a light blocking means having a formation width corresponding to the black matrix in the spaced interval between the black matrices. The method of claim 15, And the black matrix is formed in a stripe type structure located in the first direction. The method of claim 15, And the black matrix is formed in a stripe type structure located in the second direction. The method of claim 15, And the black matrix is formed in a matrix type structure located in both the first and second directions. The method according to any one of claims 16 or 18, And a protruding portion extending from the gate wiring, and the gate wiring portion having the protruding portion constitutes a light blocking means at a position corresponding to the space between the black matrices. The method according to any one of claims 17 or 18, The forming of the light blocking means is a step of forming a light blocking pattern using the same material in the same process as the data line. The method according to any one of claims 17 or 18, And a protrusion extending on both sides of the data line at a position corresponding to the space between the black matrices, and the data line having the protrusion forms an optical blocking means. The method according to any one of claims 17 or 18, The forming of the light blocking means is a step of forming a light blocking pattern using the same material in the same process as the data line. The method of claim 15, And a separation distance between the black matrices is selected from a value larger than at least 3 μm. delete

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