KR101057101B1 - Fluidized bed reactor for producing granular polycrystalline silicon and method of producing the same - Google Patents
Fluidized bed reactor for producing granular polycrystalline silicon and method of producing the same Download PDFInfo
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- KR101057101B1 KR101057101B1 KR1020100099457A KR20100099457A KR101057101B1 KR 101057101 B1 KR101057101 B1 KR 101057101B1 KR 1020100099457 A KR1020100099457 A KR 1020100099457A KR 20100099457 A KR20100099457 A KR 20100099457A KR 101057101 B1 KR101057101 B1 KR 101057101B1
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
- B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
- B01J8/1818—Feeding of the fluidising gas
- B01J8/1827—Feeding of the fluidising gas the fluidising gas being a reactant
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
- B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
- B01J8/24—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles according to "fluidised-bed" technique
- B01J8/38—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles according to "fluidised-bed" technique with fluidised bed containing a rotatable device or being subject to rotation or to a circulatory movement, i.e. leaving a vessel and subsequently re-entering it
- B01J8/384—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles according to "fluidised-bed" technique with fluidised bed containing a rotatable device or being subject to rotation or to a circulatory movement, i.e. leaving a vessel and subsequently re-entering it being subject to a circulatory movement only
- B01J8/386—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles according to "fluidised-bed" technique with fluidised bed containing a rotatable device or being subject to rotation or to a circulatory movement, i.e. leaving a vessel and subsequently re-entering it being subject to a circulatory movement only internally, i.e. the particles rotate within the vessel
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
- B01J2208/00008—Controlling the process
- B01J2208/00017—Controlling the temperature
- B01J2208/00106—Controlling the temperature by indirect heat exchange
- B01J2208/00115—Controlling the temperature by indirect heat exchange with heat exchange elements inside the bed of solid particles
- B01J2208/00132—Tubes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
- B01J2208/00008—Controlling the process
- B01J2208/00017—Controlling the temperature
- B01J2208/00106—Controlling the temperature by indirect heat exchange
- B01J2208/00115—Controlling the temperature by indirect heat exchange with heat exchange elements inside the bed of solid particles
- B01J2208/0015—Plates; Cylinders
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
- B01J2208/00008—Controlling the process
- B01J2208/00017—Controlling the temperature
- B01J2208/00477—Controlling the temperature by thermal insulation means
- B01J2208/00495—Controlling the temperature by thermal insulation means using insulating materials or refractories
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
- B01J2208/00796—Details of the reactor or of the particulate material
- B01J2208/00893—Feeding means for the reactants
- B01J2208/00902—Nozzle-type feeding elements
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
- B01J2208/00796—Details of the reactor or of the particulate material
- B01J2208/00991—Disengagement zone in fluidised-bed reactors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/02—Apparatus characterised by their chemically-resistant properties
- B01J2219/0204—Apparatus characterised by their chemically-resistant properties comprising coatings on the surfaces in direct contact with the reactive components
- B01J2219/0218—Apparatus characterised by their chemically-resistant properties comprising coatings on the surfaces in direct contact with the reactive components of ceramic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/02—Apparatus characterised by their chemically-resistant properties
- B01J2219/025—Apparatus characterised by their chemically-resistant properties characterised by the construction materials of the reactor vessel proper
- B01J2219/0277—Metal based
- B01J2219/0286—Steel
Abstract
The present invention relates to a fluidized bed reactor for producing particulate polysilicon and a method for producing polycrystalline silicon using the same. More particularly, in a fluidized bed reactor for producing particulate polycrystalline silicon in which a reaction is performed at the top of the chamber by injecting a fluid gas from the bottom of the chamber. chamber; A tubular heating device located inside the chamber; A flow gas first supply pipe formed under the chamber to supply the flow gas into the heating device; And it provides a fluidized bed reactor for producing a particulate polycrystalline silicon and a polycrystalline silicon manufacturing method using the same, characterized in that it comprises a venturi to increase the flow gas velocity inside the heating device.
Description
The present invention relates to a fluidized bed reactor for producing polycrystalline silicon and a method for producing polycrystalline silicon using the same, and more particularly, in the production of a large amount of polycrystalline silicon in the form of particles using a fluidized bed reactor, silicon is deposited in a heating apparatus. The present invention relates to a fluidized bed reactor for producing polycrystalline silicon and a method for producing polycrystalline silicon using the same, which efficiently prevents accumulation and not only continuously operate the reactor but also select particle sizes and produce high purity silicon particles.
In order to prepare polycrystalline silicon, a chemical vapor deposition (CVD) method in which a silicon component is continuously deposited on a surface of a seed particle silicon by pyrolysis or hydrogen reduction of a reaction gas containing a silicon component is generally used. However, this process is a batch process with a long production time.
As such, a bell jar type reactor has been mainly used for commercial mass production of polycrystalline silicon used in the semiconductor field, and the diameter of the polycrystalline silicon product manufactured using the reactor is about 50 to 300 mm. . Since the vertical reactor, in which electric resistance heating is the core, has a limit on the diameter of the rod that increases due to the precipitation of silicon, not only the product cannot be continuously produced, but also the power consumption for maintaining the surface of the silicon rod at a reaction temperature of about 1,000 ° C. or more is very large. It has a disadvantage. Due to this limitation, the process is forced to proceed to a batch process.
Therefore, in order to solve this disadvantage, recently, a silicon precipitation process using a fluidized bed reactor capable of continuously producing polycrystalline silicon in the form of particles having a size of about 0.5 to 3.0 mm has been developed. According to this method, the silicon particles form a fluidized bed by the flowing gas supplied from the lower part of the reactor to the upper direction, and the silicon component in the reaction gas is bonded to the surface of these silicon particles heated to a high temperature so that the particles grow. To produce polycrystalline silicon products. At this time, the small size silicon seed particles (種 粒子, seed crystal) is lost to the fluidity as it increases due to the continuous precipitation of the silicon component gradually sinks to the bottom of the fluidized bed. The product particles thus grown are sorted and discharged toward the product collection, while ungrown particles are continuously introduced into the fluidized bed and continue to precipitate. Here, the silicon seed particles can be continuously or periodically filled into the fluidized bed.
Polycrystalline silicon prepared using a fluidized bed reactor as described above is mainly used for the production of silicon single crystal, which is a basic material of semiconductor wafers. In addition, the fluidized bed reactor has a very large surface area of the silicon particles that can be precipitated, the reaction yield is high under the same reaction conditions, there is an advantage that the reaction can be maintained continuously.
However, the silicon-containing gas decomposes itself at temperatures above about 300 to 400 ° C. (initial decomposition temperature) to cause homogeneous necleation reactions, as well as on the surface of the inner wall of the fluidized bed reactor where the reaction temperature is higher than the initial decomposition temperature. Silicon precipitates regardless of the type of material. Therefore, not only silicon precipitation occurs on the surface of the flowing silicon particles, but also a phenomenon in which silicon particles accumulate in a heating apparatus or the like inside the reactor.
Accumulation of the inner wall of the reactor of the silicon precipitates not only lowers the yield of the product, but also stops the continuous operation of the fluidized bed reactor due to generation of particles or chunks out of specification. Accumulation of silicon precipitates inside the reactor not only causes breakage or degradation of the reactor and operational safety problems, but also causes physical or thermal deformation and stress caused by the layer or mass of the precipitate, causing cracks or breakage in the reactor. This can increase the risk of an accident.
Republic of Korea Patent No. 0411180 "Method and apparatus for producing polycrystalline silicon" in the production of a large amount of polycrystalline silicon in the form of a particle using a fluidized bed reactor by mounting a nozzle for supplying an etching gas containing hydrogen chloride There is disclosed a method and apparatus for producing polycrystalline silicon which effectively prevents the deposition and accumulation of silicon on the surface of the supply means and allows the reactor to be operated continuously. However, the patent discloses that the precipitated silicon particles directly contact the heating means. While falling down, there is a problem that silicon particles accumulate in the heating means. The etching process using hydrogen chloride may corrode polycrystalline silicon as a product to sacrifice yield.
In addition, US Pat. No. 7029632 discloses a radiant heat source in which a heating device is located outside the inner reaction tube and at the same time disposed around the heating zone without directly contacting the reaction tube. The radiation source reacts the silicon particles in the heating zone by radiant heat. It is characterized by heating above the temperature by radiant heat. However, the patent has a problem that the silicon particles heated by the heating device reacts and the silicon accumulates in the inner reaction tube in contact with the heating device.
In the case where the accumulation of the silicon particles occurs, the productivity is lowered by stopping the continuous process and removing the accumulated part. In addition, the fluidized bed reactor known to date has a disadvantage that the size distribution of the particles is wide because there is no method for selecting the product particles in a uniform size.
Therefore, it has been desired to develop a reactor capable of producing continuous particles while at the same time producing particles having a uniform distribution while minimizing the accumulation of silicon inside the reactor during the production of polysilicon particles.
An object of the present invention to solve the above problems is to provide a method for producing polycrystalline silicon using the fluidized bed reactor that can be prevented from accumulating in the heating device, etc. in the fluidized bed reactor.
Another object of the present invention is to provide a method for producing polycrystalline silicon using a fluidized bed reactor that can produce a uniform particle size when producing the polycrystalline silicon particles through a fluidized bed reactor.
In order to achieve the above object, the present invention provides a fluidized bed reactor for producing particulate polycrystalline silicon in which a flow gas is injected from the lower part of the chamber and reaction occurs at the upper part of the chamber. A tubular heating device located inside the chamber; A flow gas first supply pipe formed under the chamber to supply the flow gas into the heating device; And it provides a fluidized bed reactor for producing a particulate polysilicon characterized in that it comprises a venturi to increase the flow gas velocity inside the heating device.
In another aspect, the present invention provides a fluidized bed reactor for producing particulate polysilicon, characterized in that it further comprises a cone leading the silicon formed of particles in the chamber to the first supply pipe.
In another aspect, the present invention provides a fluidized bed reactor for producing particulate polysilicon, characterized in that the chamber is formed in a cone shape to guide the silicon formed of particles to the first supply pipe.
In another aspect, the present invention provides a fluidized bed reactor for producing particulate polysilicon, characterized in that it comprises a reaction gas supply pipe for supplying a reaction gas containing a silicon component to the upper portion of the chamber at a position higher than the heating device.
In another aspect, the present invention provides a fluidized bed reactor for producing particulate polysilicon, characterized in that to form a second supply pipe in the lower chamber outside the heating device to supply a flow gas to the upper chamber.
In another aspect, the present invention provides a fluidized bed reactor for producing particulate polysilicon, characterized in that it further comprises a third supply pipe for supplying a flow gas to increase the speed of the material flowing through the venturi.
In another aspect, the present invention provides a fluidized bed reactor for producing particulate polysilicon, characterized in that the silicon seed particles are introduced into the fluidized bed of the upper chamber.
In addition, the reaction gas of the present invention provides a fluidized bed reactor for producing a particulate polysilicon, characterized in that the silicon component or at least one of hydrogen, argon and helium in the silicon component.
In addition, the present invention is for producing a particulate polycrystalline silicon, characterized in that at least one selected from monosilane (SiH 4 ), dichlorosilane (SiH 2 Cl 2 ), trichlorosilane (SiHCl 3 ) and tetrachloride (SiCl 4 ) as the silicon component. Provide a fluidized bed reactor.
The present invention also provides a fluidized bed reactor for producing particulate polysilicon, wherein the flow gas is selected from at least one of hydrogen, argon and helium.
In another aspect, the present invention provides a fluidized bed reactor for producing particulate polysilicon, characterized in that the material of the chamber is any one of metal, alloy and ceramic. More specifically, the chamber provides a fluidized bed reactor for producing particulate polycrystalline silicon, characterized in that any one of stainless-steel, quartz, and carbon steel.
In another aspect, the present invention provides a fluidized bed reactor for producing particulate polysilicon, characterized in that the inner wall of the chamber is coated with any one of silicon, silicon carbide (SiC), silicon nitride (Si 3 N 4 ), Si 3 O 4 .
In another aspect, the present invention provides a fluidized bed reactor for producing particulate polysilicon, characterized in that the heating device is installed perpendicular to the lower portion of the chamber, there is a space through which the silicon particles and gas can pass.
In another aspect, the present invention is the heating device is composed of a heating unit, a reflecting surface and an insulator, wherein the heating unit is located inside the tubular shape is formed so that heat can be transferred to the upper portion of the chamber through the inside of the heating apparatus Provided is a fluidized bed reactor for producing silicon.
In another aspect, the insulator is formed on the outside of the tubular shape, the material of the insulator is any one of a ceramic, a fabric made of silica fibers, silicon carbide (SiC) and silicon nitride (Si 3 N 4 ). Provided is a fluidized bed reactor for producing particulate polycrystalline silicon.
In another aspect, the present invention provides a fluidized bed reactor for producing particulate polysilicon, characterized in that the flow gas and the reaction gas introduced into the chamber is discharged through the discharge means.
In another aspect, the present invention provides a fluidized bed reactor for producing particulate polysilicon, characterized in that the silicon seed particles discharged through the discharge means is sized and re-introduced into the chamber.
In another aspect, the present invention provides a fluidized bed reactor for producing particulate polysilicon, characterized in that the discharge means is located above the chamber.
In another aspect, the present invention provides a fluidized bed reactor for producing particulate polysilicon, characterized in that the pressure in the chamber is 1 to 20bar.
The present invention also provides a hermetic chamber; A tubular heating device located inside the chamber; A flow gas first supply pipe formed under the chamber to supply the flow gas into the heating device; And in the fluidized bed reactor including a venturi for increasing the flow gas velocity inside the heater, the silicon grown by precipitation after the fluidized bed is formed in the upper part of the heater by injecting the reaction gas and the fluid gas separately, respectively, into the chamber. It provides a method for producing particulate polysilicon characterized in that the screening down and down through the first supply pipe.
In another aspect, the present invention provides a method for producing particulate polysilicon, characterized in that it further comprises a cone leading to the silicon formed of particles in the chamber to the first supply pipe.
In another aspect, the present invention provides a method for producing particulate polysilicon, characterized in that the chamber is formed in a cone shape to guide the silicon formed of particles to the first supply pipe.
In another aspect, the present invention provides a method for producing particulate polysilicon, characterized in that it comprises a reaction gas supply pipe for supplying a reaction gas containing a silicon component to the upper portion of the chamber at a position higher than the heating device.
In another aspect, the present invention provides a method for producing particulate polysilicon, characterized in that to form a second supply pipe in the lower chamber outside the heating device to supply a flow gas to the upper chamber.
In another aspect, the present invention provides a method for producing particulate polysilicon, characterized in that it further comprises a third supply pipe for supplying a flow gas to increase the speed of the material flowing through the venturi.
In another aspect, the present invention provides a method for producing particulate polysilicon, characterized in that the silicon seed particles are introduced into the fluidized bed of the upper chamber.
In another aspect, the present invention provides a method for producing particulate polysilicon, characterized in that the reaction gas is included in the silicon component or at least one of hydrogen, argon and helium in the silicon component.
In another aspect, the present invention is the production of particulate polycrystalline silicon, characterized in that at least one selected from monosilane (SiH 4 ), dichlorosilane (SiH 2 Cl 2 ), trichlorosilane (SiHCl 3 ) and tetrachloride (SiCl 4 ) as the silicon component. Provide a method.
In another aspect, the present invention provides a method for producing particulate polysilicon, characterized in that the flow gas is selected from at least one of hydrogen, argon and helium.
In another aspect, the present invention provides a method for producing particulate polysilicon, characterized in that the material of the chamber is any one of metal, alloy and ceramic. More specifically, the chamber provides a method for producing particulate polysilicon, wherein the material is any one of stainless steel, quartz, and carbon steel.
In another aspect, the present invention provides a method for producing particulate polycrystalline silicon, characterized in that the inner wall of the chamber is coated with any one of silicon, silicon carbide (SiC), silicon nitride (Si 3 N 4 ) and Si 3 O 4 .
In another aspect, the present invention provides a method for producing particulate polysilicon, characterized in that the heating device is installed vertically in the lower portion of the chamber, there is a space through which the silicon particles and gas can pass.
In addition, the present invention is the heating device is composed of a heating unit, a reflecting surface and an insulator, wherein the heating unit is located inside the tubular shape is formed so that heat can be transferred to the upper portion of the chamber through the interior of the heating apparatus It provides a silicon manufacturing method.
In another aspect, the insulator is formed on the outside of the tubular shape, the material of the insulator is any one of a ceramic, a fabric made of silica fibers, silicon carbide (SiC) and silicon nitride (Si 3 N 4 ). It provides a particulate polysilicon production method.
In another aspect, the present invention provides a method for producing particulate polysilicon, characterized in that the flow gas and the reaction gas introduced into the chamber is discharged through the discharge means.
In another aspect, the present invention provides a method for producing particulate polysilicon, characterized in that the silicon seed particles discharged through the discharge means is sized and re-introduced into the chamber.
In another aspect, the present invention provides a method for producing particulate polysilicon, characterized in that the discharge means is located above the chamber.
In another aspect, the present invention provides a method for producing particulate polysilicon, characterized in that the pressure in the chamber is 1 to 20bar.
The fluidized bed reactor for producing particulate polycrystalline silicon and the polycrystalline silicon manufacturing method using the same according to the present invention have an advantage that a phenomenon in which silicon particles accumulate in a heating apparatus is hardly generated.
In addition, the fluidized bed reactor for producing particulate polycrystalline silicon and the polycrystalline silicon manufacturing method using the same according to the present invention can be produced according to the particle size of the desired polycrystalline silicon by controlling the speed of the flow gas supplied from the first supply pipe, the second supply pipe and the third supply pipe. It has an effect.
In addition, the fluidized bed reactor for producing particulate polycrystalline silicon and the polycrystalline silicon manufacturing method using the same according to the present invention have a continuous process, and thus have an effect of long-term use and productivity.
In addition, the fluidized bed reactor for producing particulate polycrystalline silicon and the polycrystalline silicon manufacturing method using the same according to the present invention can greatly improve the polycrystalline silicon production capacity by operating the fluidized bed reactor at high pressure.
1 and 2 show a cross-sectional view of a fluidized bed reactor for producing particulate polysilicon according to an embodiment of the present invention.
Figure 3 shows a perspective view of a heating apparatus according to an embodiment of the present invention.
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. First of all, it should be noted that in the drawings, the same components or parts denote the same reference numerals as much as possible. In describing the present invention, detailed descriptions of related well-known functions or configurations are omitted in order not to obscure the subject matter of the present invention.
As used herein, the terms "about", "substantially", and the like, are used at, or in close proximity to, numerical values as are indicative of preparation and material tolerances inherent in the meanings mentioned, and are intended to be accurate or to facilitate understanding of the invention. Absolute figures are used to prevent unfair use by unscrupulous infringers.
The flow gas used in the present invention refers to a gas supplied so that a fluidized bed constituting a bed of silicon particles is formed at the top of the chamber.
The reaction gas used in the present invention refers to a gas containing a silicon component as a raw material gas used for producing polycrystalline silicon particles.
The process of producing polycrystalline silicon using the fluidized bed reactor according to the present invention, the closed chamber to block the space from the outside; A tubular heating device located inside the chamber; A flow gas first supply pipe formed under the chamber to supply the flow gas into the heating device; And a venturi to increase the flow gas velocity inside the heater. In the fluidized bed reactor consisting of a cone for guiding silicon formed of particles, the lower part of the chamber injects a fluid gas and a reaction gas separately to form a fluidized bed in the upper part of the heating device, which is the chamber, to react. When the silicon precipitated by the reaction reaches a certain size, the weight of the silicon increases, and the silicon is lowered to the lower part of the chamber by gravity. The lowered silicon is collected through the cone, and particles of a certain size are collected under the first supply pipe, and the remainder is passed through the venturi to the fluidized bed again.
Alternatively, the chamber may be formed in a cone shape without separately configuring the cone.
EMBODIMENT OF THE INVENTION Hereinafter, this invention is demonstrated in detail with reference to drawings.
1 and 2 show a cross-sectional view of a fluidized bed reactor for producing particulate polysilicon according to an embodiment of the present invention.
Fluidized bed reactor according to an embodiment of the present invention is composed of a
The
Figure 3 shows a perspective view of a heating apparatus according to an embodiment of the present invention.
The
In addition, the
In the heating apparatus, it should be noted that a predetermined space is formed between the cone 160 (the lower chamber of the chamber when no cone is formed (see FIG. 2)) and the
The
The
As the flow gas, it is preferable to use one or more selected from hydrogen, argon and helium.
When the size of the precipitated silicon particles that are dropped through the
In addition, the flow gas can also be supplied through the
Therefore, the fluidized bed reactor according to the present invention has the advantage of controlling the particle size of the desired polycrystalline silicon by controlling the speed of the flow gas supplied from the
In addition, the
The
In addition, the
In addition, the
The
On the other hand, the reaction
Supply of the reaction gas may be supplied in the form of spraying through a nozzle (nozzle), etc., it is preferable to spray in the direction of the fluidized bed from the top of the chamber to maintain the
On the other hand, the flowing gas and the unreacted gas passing through the
Meanwhile, in order to supply seed to the fluidized bed, silicon seed particles may be supplied from the upper portion of the chamber toward the fluidized bed (not shown). The size of the seed particles is preferably 0.1 ~ 2.0mm, more preferably 0.3 ~ 1.2mm.
The silicon seed particles may be supplied to the fluidized bed by forming a separate supply means at the top of the chamber, or may be supplied to another passage that is re-introduced into the discharge means 190. In the case of forming and supplying a separate supply means, the silicon seed particles may be supplied toward the fluidized bed at the top of the chamber and below the fluidized bed, or may be supplied downward from the upper part of the chamber above the fluidized bed to the fluidized bed.
In addition, since the
In addition, an observation unit (not shown) may be included in the upper part of the
In addition, the fluidized bed reactor according to the present invention does not limit the pressure in the
It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the inventions. It will be clear to those who have knowledge of.
Claims (38)
Hermetic chamber;
A tubular heating device located inside the chamber;
A flow gas first supply pipe formed under the chamber to supply the flow gas into the heating device; And
Fluidized bed reactor for producing a particulate polysilicon, characterized in that it comprises a venturi to increase the flow gas velocity inside the heater.
The fluidized bed reactor for producing particulate polysilicon, characterized in that it further comprises a cone leading the silicon formed of particles in the chamber to the first supply pipe.
The lower portion of the chamber is a fluidized bed reactor for producing a particulate polysilicon, characterized in that formed in a cone shape to guide the silicon formed of particles to the first supply pipe.
A fluidized bed reactor for producing particulate polysilicon, characterized in that it comprises a reaction gas supply pipe for supplying a reaction gas containing a silicon component to the upper portion of the chamber at a position higher than the heating device.
A fluidized bed reactor for producing particulate polysilicon, characterized in that to form a second supply pipe in the lower portion of the chamber outside the heating device to supply the flow gas to the upper chamber.
Fluidized bed reactor for producing particulate polysilicon, characterized in that it further comprises a third supply pipe for supplying a flow gas to increase the speed of the material flowing through the venturi.
Silicon seed particles are supplied through a supply means, wherein the silicon seed particles are supplied toward the fluidized bed from the bottom of the fluidized bed or from the top of the fluidized bed.
The reaction gas is a fluidized bed reactor for producing a particulate polycrystalline silicon, characterized in that the silicon component or at least one of hydrogen, argon and helium in the silicon component.
The silicon component is a fluidized bed reactor for producing particulate polycrystalline silicon, characterized in that at least one selected from monosilane (SiH 4 ), silane dichloride (SiH 2 Cl 2 ), trichlorosilane (SiHCl 3 ) and tetrachloride (SiCl 4 ).
The flow gas is a fluidized bed reactor for producing particulate polysilicon, characterized in that at least one selected from hydrogen, argon and helium.
The material of the chamber is a fluidized bed reactor for producing particulate polycrystalline silicon, characterized in that any one of stainless steel, quartz and carbon steel.
The inner wall of the chamber is a fluidized bed reactor for producing particulate polysilicon, characterized in that coated or lined with any one of silicon, silicon carbide (SiC), silicon nitride (Si 3 N 4 ), Si 3 O 4 .
The heating device is installed vertically in the lower portion of the chamber, the fluidized bed reactor for producing a particulate polysilicon, characterized in that the lower space there is a space for the silicon particles and gas to pass through.
The heating device comprises a heating part, a reflecting surface and an insulator, wherein the heating part is located inside the tubular shape so that heat can be transferred to the upper part of the chamber through the inside of the heating device. .
The insulator is formed outside the tubular shape, and the material of the insulator is any one of ceramic, fabric made of silica fibers, silicon carbide (SiC) and silicon nitride (Si 3 N 4 ). Fluidized bed reactor for producing polycrystalline silicon.
Fluidized bed reactor for producing particulate polysilicon, characterized in that the flowing gas and the reaction gas introduced into the chamber is discharged through the discharge means.
The silicon seed particles discharged through the discharge means are selected in size and re-introduced into the chamber, the fluidized bed reactor for producing particulate polysilicon.
The discharge means is a fluidized bed reactor for producing particulate polysilicon, characterized in that located above the chamber.
Fluidized bed reactor for producing particulate polysilicon, characterized in that the pressure in the chamber is 1 to 20bar.
Particle polycrystalline silicon, characterized in that the reaction gas and the flow gas is injected separately and the silicon grown by precipitation after the fluidized layer is formed in the upper portion of the heating device, the chamber is lowered to the lower portion of the chamber to be sorted / discharged through the first supply pipe. Manufacturing method.
And a cone for guiding silicon formed of particles in the chamber to the first supply pipe.
And the chamber lower portion is formed in a cone shape to guide silicon formed of particles to the first supply pipe.
Particle polysilicon manufacturing method comprising a reaction gas supply pipe for supplying a reaction gas containing a silicon component to the upper portion of the chamber at a position higher than the heating device.
Particle polysilicon manufacturing method, characterized in that for supplying the flow gas to the upper chamber by forming a second supply pipe in the lower chamber outside the heating device.
Particle polysilicon manufacturing method further comprises a third supply pipe for supplying a flow gas to increase the speed of the material flowing through the venturi.
Particle polycrystalline silicon production method characterized in that the silicon seed particles are injected into the fluidized bed of the upper chamber.
The reaction gas is a silicon component or a method for producing particulate polycrystalline silicon, characterized in that at least one of hydrogen, argon and helium contained in the silicon component.
The silicon component is a method for producing particulate polysilicon, characterized in that at least one selected from monosilane (SiH 4 ), disilane (SiH 2 Cl 2 ), trichlorosilane (SiHCl 3 ) and tetrachloride (SiCl 4 ).
The flow gas is particulate polysilicon manufacturing method characterized in that at least one selected from hydrogen, argon and helium.
The material of the chamber is stainless-steel (stainless-steel), particulate polysilicon manufacturing method, characterized in that any one of quartz and carbon steel.
The inner wall of the chamber is a granular polysilicon manufacturing method, characterized in that the coating or lining with any one of silicon, silicon carbide (SiC), silicon nitride (Si 3 N 4 ) and Si 3 O 4 .
The heating device is installed vertically to the lower portion of the chamber, the particulate polysilicon manufacturing method, characterized in that there is a space through which the silicon particles and gas can pass.
The heating device comprises a heating unit, a reflecting surface and an insulator, wherein the heating unit is located inside the tubular shape is formed so that heat can be transferred to the upper chamber through the inside of the heating apparatus.
The insulator is formed outside the tubular shape, and the material of the insulator is any one of ceramic, fabric made of silica fibers, silicon carbide (SiC) and silicon nitride (Si 3 N 4 ). Polysilicon production method.
The flow gas and the reaction gas introduced into the chamber is a particulate polysilicon manufacturing method characterized in that the discharge through the discharge means.
The silicon seed particles discharged through the discharge means are selected in size and re-introduced into the chamber.
The discharge means is a particulate polysilicon manufacturing method, characterized in that located above the chamber.
The pressure in the chamber is a granular polysilicon manufacturing method, characterized in that 1 to 20bar.
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KR1020100099457A KR101057101B1 (en) | 2010-10-12 | 2010-10-12 | Fluidized bed reactor for producing granular polycrystalline silicon and method of producing the same |
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Cited By (3)
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WO2015008889A1 (en) * | 2013-07-16 | 2015-01-22 | 웅진에너지 주식회사 | Device and method for manufacturing polysilicon |
KR101615307B1 (en) * | 2013-07-16 | 2016-04-25 | 웅진에너지 주식회사 | Polysilicon production apparatus |
KR20170070005A (en) * | 2014-08-15 | 2017-06-21 | 알이씨 실리콘 인코포레이티드 | Segmented silicon carbide liner |
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CN103172067B (en) * | 2013-04-08 | 2014-09-24 | 无锡中彩科技有限公司 | Cold wall fluidized bed and application thereof |
DE102015224099A1 (en) * | 2015-12-02 | 2017-06-08 | Wacker Chemie Ag | Fluidized bed reactor and process for producing polycrystalline silicon granules |
KR102360550B1 (en) * | 2017-08-23 | 2022-02-10 | 와커 헤미 아게 | Fluidized Bed Reactor for Production of Granular Polycrystalline Silicon |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5165908A (en) | 1988-03-31 | 1992-11-24 | Advanced Silicon Materials, Inc. | Annular heated fluidized bed reactor |
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DE19948395A1 (en) * | 1999-10-06 | 2001-05-03 | Wacker Chemie Gmbh | Fluidized bed reactor with radiative heating, useful for producing high purity polycrystalline silicon, e.g. for electronics, by passing silicon-containing gas over hot silicon particles |
KR100756310B1 (en) * | 2006-02-07 | 2007-09-07 | 한국화학연구원 | High-pressure Fluidized Bed Reactor for Preparing Granular Polycrystalline Silicon |
DE102007021003A1 (en) * | 2007-05-04 | 2008-11-06 | Wacker Chemie Ag | Process for the continuous production of polycrystalline high-purity silicon granules |
-
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5165908A (en) | 1988-03-31 | 1992-11-24 | Advanced Silicon Materials, Inc. | Annular heated fluidized bed reactor |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015008889A1 (en) * | 2013-07-16 | 2015-01-22 | 웅진에너지 주식회사 | Device and method for manufacturing polysilicon |
KR101615307B1 (en) * | 2013-07-16 | 2016-04-25 | 웅진에너지 주식회사 | Polysilicon production apparatus |
KR20170070005A (en) * | 2014-08-15 | 2017-06-21 | 알이씨 실리콘 인코포레이티드 | Segmented silicon carbide liner |
KR102285604B1 (en) | 2014-08-15 | 2021-08-04 | 알이씨 실리콘 인코포레이티드 | Segmented silicon carbide liner |
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WO2012050341A2 (en) | 2012-04-19 |
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