KR101054893B1 - Manufacturing device of silicon substrate using spin casting type and manufacturing method of silicon substrate using the same - Google Patents

Abstract

PURPOSE: An apparatus for manufacturing a silicon substrate using a spin casting process and a method for manufacturing the silicon substrate using the same are provided to easily control the thickness and the shaft of the silicon substrate without a separate shaping unit. CONSTITUTION: A chamber(110) arranges a sealed space. A storing container(122) is arranged in the chamber, and a raw silicon material is introduced in the storing container. A discharging hole is formed at the bottom side of the storing container. A melting part(120) is arranged around the storing container and includes a heater melting the raw silicon material. A casting part(140) spin-casts the melted silicon from the discharging hole. A cooling part(160) cools the spin-cased silicon. A temperature measuring part(180) measures the temperature of the melting part.

Description

Device for manufacturing silicon substrate using spin casting method and method for manufacturing silicon substrate using same TECHNICAL FIELD

The present invention relates to a silicon substrate manufacturing apparatus used for solar cells, and more specifically, to control the impurity and silicon substrate manufacturing using a spin casting method that can easily control the thickness and shape of the silicon substrate without a separate molding tool An apparatus and a method for manufacturing a silicon substrate using the same.

Conventional solar cell silicon substrates are completed by ingot and block-type intermediate processes from liquid silicon, mainly by using Czochralski method and block casting method, and then cutting them by sawing process.

Although the Czochralski method is suitable for the manufacture of semiconductor substrates requiring high purity materials, there is a problem of low practicality due to high manufacturing cost for use in solar cells, and purity due to contamination from the crucible when the block casting method is used. There is a problem such as lowering of the crucible and shortening the life of the crucible.

In addition, silicon substrate manufacturing methods inevitably generate more than 40% of kerf-loss due to the cutting wire in the ingot cutting process. For this reason, since the manufacturing cost of silicon substrates rises sharply, the development of a technology that radically eliminates cutting loss and innovatively lowers manufacturing costs can be said to be the key to the reduction and spread of solar cells.

Such silicon substrate direct manufacturing technology can be classified into vertical growth technology and horizontal growth technology. Representative vertical growth technologies include edge-defined film-fed growth (EFG) and string ribbon (SR), and horizontal growth technologies include ribbon growth on substrate (RGS).

The vertical growth method, the EFG method, produces about 2% of the production of polycrystalline silicon substrates for solar cells. EFG method maximizes productivity by melting molten silicon to form capillary phenomena in graphite die and growing it to octagonal column to increase productivity by extracting and solidifying it up to 7m in thickness of 250㎛. It can be called a method.

However, silicon substrates produced using the EFG method have a small grain width due to length growth but reach a few centimeters in the length direction, and a small amount of oxygen impurities due to the blocking of oxygen, while passing through the graphite die. The supersaturation of the carbon component generated while being presented as the biggest problem.

On the other hand, in the RGS method, a continuous supporting substrate passes through a bath containing molten silicon, and at one end of the bath, a casting die for adjusting the thickness of the silicon substrate is provided, thereby supporting the supporting substrate. According to this method, cooling occurs by heat dissipation toward the lower side and solidification occurs, thereby obtaining ribbon-type silicon.

The RGS method is known to be excellent in terms of productivity since it has the fastest production speed, but there is a problem in that impurities are added by the supporting substrate and the casting die.

Disclosure of Invention An object of the present invention is to provide a silicon substrate manufacturing apparatus using a spin casting method and a silicon substrate manufacturing method using the same, which can fundamentally eliminate raw material loss generated in ingot growth and cutting processes.

Silicon ribbon manufacturing apparatus using a spin casting method according to an embodiment of the present invention for achieving the above object comprises a chamber for providing a sealed space with the outside; A melting part disposed in the chamber, the melting part including a storage container in which a silicon raw material is charged and a discharge port formed in a bottom surface thereof, and a heater mounted around the storage container to melt the charged silicon raw material; A casting part disposed under the melting part and spin casting molten silicon dropped from the discharge hole; And a cooling unit cooling the molten silicon to be spin cast, wherein the casting part includes a rotating plate and a driving motor for controlling a rotational movement of the rotating plate, wherein the casting part includes molten silicon supplied on the rotating plate of the rotating plate. It is characterized in that the silicon substrate is formed by being solidified while moving to the outside by the centrifugal force by rotation.

Silicon ribbon manufacturing method using a spin casting method according to an embodiment of the present invention for achieving the above object comprises the steps of: (a) charging a silicon raw material in the melting portion; (b) melting the charged silicon raw material; And (c) supplying molten silicon dropped from the melting part to the rotating casting part to solidify while moving to the outside by centrifugal force caused by the rotation of the casting part to form a silicon substrate. .

In the silicon substrate manufacturing apparatus and the silicon substrate manufacturing method using the same according to the present invention, it is easy to control impurities by separating the molten portion and the casting portion.

In addition, by controlling the rotational speed of the rotating plate and the supply amount of molten silicon, it is possible to easily adjust the thickness and shape of the silicon substrate without a separate molding tool.

In addition, the silicon substrate manufacturing apparatus and the silicon substrate manufacturing method using the same according to the present invention to facilitate the shape control of the molten silicon having a high surface tension in the form of a ribbon without a separate molding tool by the speed and the centrifugal force of the rotating plate rotation. Can be. As a result, the molten silicon is spread out to the outside of the rotating plate and the latent heat is effectively removed so that the silicon substrate can be formed at a high speed, thereby efficiently manufacturing the high purity silicon substrate.

1 is a cross-sectional view showing a silicon substrate manufacturing apparatus using a spin casting method according to an embodiment of the present invention.
2 is a process flowchart showing a method of manufacturing a silicon substrate using a spin casting method according to an embodiment of the present invention.
3 is a cross-sectional view showing a square mold rotating plate according to another embodiment of the present invention.
4 and 5 are photographs showing a silicon substrate manufactured by a silicon substrate manufacturing apparatus using a spin casting method according to another embodiment of the present invention.
6 and 7 are each a perspective view showing a square mold rotating plate according to another embodiment of the present invention.
8 is a graph showing measured values of relative centrifugal force according to rotation speed and distance.
9 and 10 are graphs showing the calculated and experimental values of the silicon ribbon thickness according to the relative centrifugal force.
11 is a cross-sectional view of a square mold rotating plate having a guideless square mold rotating plate and a straight guide.
12 is a photograph showing a silicon substrate spin cast in a square mold rotating plate having a guide having a straight shape.
13 is a cross-sectional view showing a square mold rotating plate having a dome-shaped guide according to an embodiment of the present invention.
FIG. 14 is a photograph showing a silicon substrate scanned by casting in a square mold rotating plate including a dome-shaped guide according to an exemplary embodiment of the present invention.
15 to 17 are photographs showing the shape of the silicon substrate manufactured according to the temperature change of the casting part.
18 is a graph showing experimental results for evaluating escape conditions of liquid molten silicon in a square mold rotating plate.

Advantages and features of the present invention and methods for achieving them will be apparent with reference to the embodiments described below in detail with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various different forms, and only the embodiments make the disclosure of the present invention complete, and those skilled in the art to which the present invention pertains. It is provided to fully inform the person having the scope of the invention, which is defined only by the scope of the claims.

Hereinafter, a silicon substrate manufacturing apparatus using a spin casting method and a silicon substrate manufacturing method using the same will be described in detail with reference to the accompanying drawings.

1 is a cross-sectional view showing a silicon substrate manufacturing apparatus using a spin casting method according to an embodiment of the present invention.

Referring to FIG. 1, a silicon substrate manufacturing apparatus 100 according to an embodiment of the present invention includes a chamber 110, a melting part 120, a casting part 140, and a cooling part 160. In addition, the silicon substrate manufacturing apparatus 100 may further include a gas injection unit 170 and a temperature measuring unit 180.

The chamber 110 provides a sealed space with the outside. At this time, the inside of the chamber 110 is maintained in an argon (Ar) gas atmosphere in a vacuum state in consideration of high latent heat and reactivity of silicon (Si). To this end, one side of the chamber 110 may be provided with an inlet 112 through which an appropriate amount of argon (Ar) gas is input and an exhaust port (114) through which used argon (Ar) gas is discharged. In addition, a vacuum pipe 116 for supplying a vacuum pressure from a vacuum pump (not shown) to the inside of the chamber 110 is provided at the other side opposite to one side of the chamber 110 to maintain the inside of the chamber 110 in a vacuum state. May be further arranged.

The melter 120 melts the silicon raw material supplied from the outside by an induction melting method. The melter 120 may include a storage container 122 and a heater 124.

The storage container 122 is filled with a silicon raw material, and has a discharge port 121 at the bottom thereof. At this time, in the case of silicon, unlike the metal, at a temperature of about 700 ° C. or less, the electrical conductivity is low, and direct heating by electromagnetic induction is difficult. Therefore, it is suitable for the silicon raw material to be melted by indirect melting by heat of the storage container 122. In the case of silicon melting by an indirect melting method, a storage container 122 made of graphite may be used. In the case of graphite, the storage container 122 is heated by electromagnetic induction because the electrical conductivity and thermal conductivity are very excellent even though it is a nonmetal material. This can be done easily.

The heater 124 is mounted to surround the storage container 122 to melt the silicon raw material charged in the storage container 122 in an induction melting method. At this time, the surface temperature of the molten silicon melted by the heater 124 may be 1350 ~ 1550 ℃. If the surface temperature of the silicon melt is less than 1350 ° C., the molten silicon may harden before the ejection. On the contrary, when the surface temperature of the silicon melt exceeds 1550 ° C., there is a problem in that molten silicon is not solidified in the rotating plate during the scan casting process described later.

The casting part 140 is disposed below the melting part 120 at regular intervals, and spin casts the molten silicon 130 dropped from the discharge port 121. At this time, the discharge port 121 is preferably installed so as to be disposed on a line perpendicular to the center of the casting portion 140, which is such that the molten silicon 130 dropped from the discharge hole 121 is dropped in the center of the casting portion 140. This is to induce molten silicon 130 to be uniformly cast on the surface of the casting part 140 during the spin casting process.

The casting part 140 may include a rotating plate 142 and a driving motor 144.

Rotating plate 142 is preferably formed of a graphite (graphite) material, which is a non-metallic material is excellent in electrical conductivity and thermal conductivity even in the case of graphite has the advantage of easy heating by electromagnetic induction.

The drive motor 144 is mounted to interlock with the rotating plate 142 to control the rotational movement of the rotating plate 142. In this case, the driving motor 144 may further perform a function of controlling the rotation speed of the rotating plate 142 and adjusting the angle.

In the spin casting process, the rotation speed of the rotating plate 142 is preferably performed at 1500 ~ 6000rpm. If the rotation speed of the rotating plate 142 is less than 1500 rpm, there is a problem that molten silicon may not evenly spread outward from the center of the rotating plate 142. On the contrary, when the rotational speed of the rotating plate 142 exceeds 6000 rpm, the centrifugal force acts strongly and the molten silicon may leave the rotating plate 142.

Although not shown in the drawings, the casting part 140 may further include a heating unit (not shown). The heating unit functions to maintain the surface temperature of the rotating plate 142 at an appropriate temperature.

At this time, the surface temperature of the rotating plate 142 is preferably maintained at 600 ~ 1100 ℃. If the surface temperature of the rotating plate 142 is less than 600 ° C., there is a concern that the molten silicon may harden before the molten silicon spreads outward from the center of the rotating plate 142 by centrifugal force. On the contrary, when the surface temperature of the rotating plate 142 exceeds 1100 ° C., the molten silicon may not be solidified in the rotating plate 142.

The cooling unit 160 cools the molten silicon that is spin cast. The cooling unit 160 is mounted for the purpose of solidifying it while dissolving the molten silicon in an appropriate thickness by centrifugal force by the rotation of the rotating plate 142.

In this case, the cooling unit 160 may lower the surface temperature of the rotating plate 142 by spraying the cooling water directly from the cooling water supply unit 162 to the rotating plate 142 of the casting unit 140. Alternatively, the cooling unit 160 may rotate in a manner in which the cooling water circulates through the cooling water supply line 164 connected to the cooling water supply unit 162 to a cooling tube (not shown) designed inside the rotating plate 142. 142) can lower the surface temperature.

Meanwhile, the gas supply unit 170 supplies an inert gas such as argon (Ar) gas to the storage container 122. In this case, the inert gas serves to pressurize the inside of the reaction vessel 122 to induce the discharge of the molten silicon 130.

The temperature measuring unit 180 measures the temperature of the melting unit 120. A pyrometer may be used as the temperature measuring unit 180. In this case, the temperature measuring unit 180 may be electrically connected to a controller (not shown). The controller controls the surface temperature of the silicon melt by comparing the surface temperature of the silicon melt measured by the temperature measuring unit 180 with a set value.

As described above, the silicon substrate manufacturing apparatus using the spin casting method according to an embodiment of the present invention is supplied to the molten silicon on the rotating rotating plate horizontally cooled, the molten silicon is rotated by the centrifugal force of the rotating rotating plate By moving to the outside of the solidified to form a silicon substrate, it is possible to manufacture a high-purity silicon substrate at a high speed while easily performing shape and crystal defect control.

In the silicon substrate manufacturing apparatus using the spin casting method having such a structure, it is easy to control impurities by separating the molten portion and the casting portion. In addition, by controlling the rotational speed of the rotating plate and the supply amount of molten silicon, it is possible to easily adjust the thickness and shape of the silicon substrate without a separate molding tool.

In addition, the silicon substrate manufacturing apparatus according to the present invention can facilitate the shape control of the molten silicon having a high surface tension in the form of a ribbon without a separate molding tool by the speed and the centrifugal force of the rotating plate rotation. As a result, the molten silicon is spread out to the outside of the rotating plate and the latent heat is effectively removed so that the silicon substrate can be formed at a high speed, thereby efficiently manufacturing the high purity silicon substrate.

2 is a flowchart illustrating a method of manufacturing a silicon substrate using a spin casting method according to an exemplary embodiment of the present invention, which will be described with reference to FIG. 1.

1 and 2, the silicon substrate manufacturing method using the spin casting method includes a charging step S110, a melting step S120, and a forming step S130.

In the charging step (S110), the silicon raw material is charged into the melting part 120 from the outside. The melter 120 may include a storage container 122 and a heater 124. At this time, the storage container 122 may be provided with a discharge port 121 on the bottom.

In the melting step S120, the charged silicon raw material is melted. At this time, the surface temperature of the molten silicon melted by the heater 124 may be 1350 ~ 1550 ℃. If the surface temperature of the silicon melt is less than 1350 ° C., the molten silicon may harden before the ejection. On the contrary, when the surface temperature of the silicon melt exceeds 1550 ° C., the molten silicon 130 may not be solidified on the rotating plate 142 during the scan casting process described later.

In this case, the melting part 120 and the casting part 140 are sealed to the outside by the chamber 110. The inside of the chamber 110 is maintained in an argon (Ar) gas atmosphere in a vacuum state in consideration of high latent heat and reactivity of silicon.

In the forming step (S130) is supplied to the molten silicon 130 dropping from the molten portion 120 to the rotating casting unit 140 to be solidified while moving to the outside by the centrifugal force by the rotation of the casting unit 140 A substrate (not shown) is formed.

At this time, the casting unit 140 is preferably maintained at 600 ~ 1100 ℃. If the surface temperature of the rotating plate 142 is less than 600 ° C., there is a concern that the molten silicon may harden before the molten silicon spreads outward from the center of the rotating plate 142 by centrifugal force. On the contrary, when the surface temperature of the rotating plate 142 exceeds 1100 ° C., the molten silicon may not be solidified in the rotating plate 142.

In the process of dropping the molten silicon 130 from the molten part 120, it is preferable to supply argon (Ar) gas to the molten silicon 130 to induce discharge of the molten silicon 130. The argon gas pressurizes the inside of the reaction vessel 122 to induce discharge of the molten silicon 130.

At this time, the rotational speed of the casting unit 140 is preferably carried out at 1500 ~ 6000rpm. If the rotation speed of the rotating plate 142 is less than 1500 rpm, the molten silicon 130 may not evenly spread outward from the center of the rotating plate 142. On the contrary, when the rotational speed of the rotating plate 142 exceeds 6000 rpm, the centrifugal force acts strongly and the molten silicon 130 may leave the rotating plate 142.

The silicon substrate manufactured by such a process has an advantage in that the silicon substrate is manufactured directly from the molten silicon, thereby fundamentally eliminating raw material loss generated in the ingot growth and cutting processes.

In the case of using the spin casting method, the molten silicon melted through induction heating is supplied to the rotating plate, and the silicon substrate is directly solidified while the molten silicon is solidified while moving to the outside of the plate by the centrifugal force of the rotating plate. As a result, production yields can be maximized. In addition, since the spin casting process is performed in a chamber maintained in an argon gas atmosphere, the silicon substrate may be contaminated by impurities, thereby ensuring high purity.

On the other hand, Figure 3 is a cross-sectional view showing a square mold rotating plate according to another embodiment of the present invention.

Referring to FIG. 3, the square mold rotating plate 242 may include a rotating plate body 242a and a guide 242b formed in a dome shape at an edge of an upper surface of the rotating plate body 242a.

As such, by limiting the area CA into which the molten silicon is charged into the rectangular mold rotating plate 242 through the additional design of the guide 242b, the molten silicon is squared by the centrifugal force caused by the rotation of the rectangular mold rotating plate 242. It is possible to prevent the departure from the outside of the rotating plate 242. At this time, the guide 242b and the rotating plate body 242a may be manufactured in one piece or separate type. The guide 242b may be formed of the same material as the rotating plate body 242a.

4 and 5 are photographs showing silicon substrates manufactured by a silicon substrate manufacturing apparatus using a spin casting method according to another exemplary embodiment of the present invention.

4 and 5, it can be seen that the silicon substrate is formed by filling all the molten silicon in the rectangular mold rotating plate. At this time, the manufacturing of the silicon substrate in the square mold rotating plate was able to control the flow and solidification of the molten silicon through the adjustment of the surface temperature and the rotational speed of the rotating plate. Through this, it was confirmed that it is possible to control the thickness of the silicon substrate.

6 and 7 are each a perspective view showing a square mold rotating plate according to another embodiment of the present invention.

6 and 7, the square mold rotating plate 342 is formed on the rotating plate body 342a, the groove H formed on the upper surface of the rotating plate body 342a, and the bottom surface of the groove H. The uneven pattern 342b may be included. In addition, although not shown in the drawings, the rectangular mold rotating plate 342 may further include a guide (not shown) formed in a dome shape at the edge of the upper surface.

In this case, the concave-convex pattern 342b may be formed in a ring shape in which concentric circles are waved, as shown in FIG. 6. Alternatively, the uneven pattern 342b may be formed in a checkered shape, as shown in FIG. 7.

As such, in the case of forming a ring or checkered concave-convex pattern 342b in the square mold rotating plate 342, since the molten silicon loses momentum while passing through the concave-convex pattern 342b, the molten silicon on the square mold rotating plate 342 It can be seen that an intact quadrangular silicon substrate can be manufactured by effectively preventing the escape of.

Experimental conditions

Experimental conditions for producing a silicon substrate using a silicon substrate manufacturing apparatus using a spin casting method are shown in Table 1 below.

TABLE 1

8 is a graph showing measured values of relative centrifugal force according to rotation speed and distance, and FIGS. 9 and 10 are respective graphs showing calculated values and experimental values of silicon ribbon thickness according to relative centrifugal force. In this case, the relative centrifugal force may be defined as a value proportional to the square of the radius and the rotation speed.

Referring to FIG. 8, as a result of measuring relative centrifugal force (RCF) at points I to VI 1 to 6 cm away from the center of the rotating plate, the rotational speed (RPM) and the distance are proportionally increased. It was confirmed that the measured value of the relative centrifugal force (RCF) increases. At this time, as the rotation speed increases, the thickness of the silicon substrate decreases and the area increases.

Meanwhile, referring to FIGS. 9 and 10, in the case of the theoretical value, it was confirmed that the thickness of the silicon substrate decreased in inverse proportion to the relative centrifugal force (RCF), which was in agreement with the experimental value.

FIG. 11 is a cross-sectional view illustrating a rectangular mold rotating plate having a guideless square mold rotating plate and a straight guide, and FIG. 12 is a photograph showing a silicon substrate spin-cast into a rectangular mold rotating plate having a straight guide.

At this time, the experiment conditions were fixed by melting the silicon melt temperature: 1450 ℃, silicon loading amount 10g, the rotor plate temperature: 850 ℃, and the rotation speed was changed to 500, 1500 and 3000rpm experiment.

Referring to FIG. 11A, when the rectangular mold rotating plate 400 without a guide is used, the manufacturing of the rectangular silicon substrate fails due to the escape of liquid molten silicon. This is because the centrifugal force does not act uniformly on the molten silicon in the liquid phase in the square mold, and the high centrifugal force acts on the edge portion of the square mold to escape the liquid molten silicon.

On the other hand, referring to Figure 11 (b), even in the case of using a rectangular mold rotating plate 500 having a guide having a straight shape at the end to reduce the excess centrifugal force of the edge portion due to the nonuniform distribution of centrifugal force It was not enough to prevent the escape of molten silicon. As a result, as shown in (a) ~ (c) of Figure 12, even if the rotational speed of the square mold rotating plate to 3000rpm it is confirmed that the molten silicon is not completely filled in the square mold rotating plate with a guide of the linear shape Could.

FIG. 13 is a cross-sectional view of a square mold rotating plate having a dome shaped guide according to an embodiment of the present invention, and FIG. 14 is a silicon spin-cast into a square mold rotating plate having a dome shaped guide according to an embodiment of the present invention. It is a photograph showing a substrate.

At this time, the experiment conditions were fixed by melting the silicon melt temperature: 1450 ℃, silicon loading 10g, the rotor plate temperature: 850 ℃, and the experiment was changed by changing the rotation speed to 1000, 1500 and 2000rpm.

Referring to (a) to (c) of Figure 13, when using the rotating plate 600 having a dome-shaped guide covering the upper surface edge as in the embodiment, the escape of the liquid molten silicon during the spin casting process is reduced It was confirmed.

As a result, as shown in (a) to (c) of FIG. 14, when using a square mold rotating plate having a dome-shaped guide, molten silicon did not fill the entire region at 1000 rpm, but the rotation speed was 1500 rpm. And when it was performed at 3000rpm it was confirmed that all the molten silicon is spin cast to produce a square silicon substrate.

15 to 17 are photographs showing the shape of the silicon substrate manufactured according to the temperature change of the casting part.

At this time, the experimental conditions were fixed by melting silicon temperature: 1450 ℃, silicon loading 10g, rotational speed: 2000rpm, and the rotating plate temperature was changed to 250 ℃, 500 ℃ and 850 ℃.

15 and 16, it can be seen that at the rotor plate temperature: 250 ° C. and 500 ° C., empty portions are generated due to escape of the molten silicon in the liquid phase. On the other hand, as shown in Figure 17, when the temperature of the rotating plate was raised to 850 ℃ it was confirmed that the intact square silicon substrate is formed.

18 is a graph showing experimental results for evaluating escape conditions of liquid molten silicon in a square mold rotating plate.

In FIG. 18, the force calculated to escape the molten silicon in the liquid phase is shown from the point where the molten silicon in the liquid phase occurs.

At this time, the relative centrifugal force (RCF) at the point (I ~ IV) 1 ~ 4cm away from the center of the rotating plate was measured, respectively, when the value of the relative centrifugal force is 110 (5.02m / s) or more, melting of the liquid The escape of the silicon was found to occur. Looking at this in the square mold rotating plate, it was confirmed that the solidification proceeded through the heat transfer from the bottom before the escape of the molten silicon at the point of more than 3cm from the center of the rotating plate and starting from less than 3cm from the center of the rotating plate.

Based on the experimental results discussed so far, it can be seen that the process parameters for manufacturing the silicon substrate on the rotating rotating plate can be produced intact square silicon substrate only when solidification proceeds in a state where the liquid flow is controlled.

In particular, due to the nonuniform action of the centrifugal force caused by the rotation on the square mold rotating plate, liquid molten silicon having a certain amount of momentum that cannot stay on the rotating plate is generated, and the flow of the molten silicon is effectively controlled by changing the shape of the rotating plate. We confirmed that we could.

In the above description, the embodiment of the present invention has been described, but various changes and modifications can be made at the level of those skilled in the art. Such changes and modifications may belong to the present invention without departing from the scope of the present invention. Therefore, the scope of the present invention will be determined by the claims described below.

100: silicon substrate manufacturing apparatus 110: chamber
112: inlet port 114: exhaust port
116: vacuum pipe 120: melting part
121: discharge port 122: storage container
124 heater 130 molten silicon
140: casting part 142: rotating plate
144: drive motor 160: cooling unit
162: cooling water supply unit 164: cooling water supply pipe
170: gas supply unit 180: temperature measuring unit

Claims (17)

A chamber providing a closed space with the outside;
A melting part disposed in the chamber, the melting part including a storage container in which a silicon raw material is charged and a discharge port formed in a bottom surface thereof, and a heater mounted around the storage container to melt the charged silicon raw material;
A casting part disposed under the melting part and spin casting molten silicon dropped from the discharge hole; And
And a cooling unit cooling the molten silicon to be spin cast.
The casting part includes a rotating plate formed of graphite and a driving motor for controlling the rotational movement of the rotating plate, wherein the casting part moves the molten silicon supplied on the rotating plate to the outside by centrifugal force by the rotation of the rotating plate. The silicon substrate manufacturing apparatus using the spin-casting method characterized by forming a silicon substrate by making it solidify while making it solidify.
The method of claim 1,
The interior of the chamber
A silicon substrate manufacturing apparatus using the spin casting method, which is maintained in a vacuum argon gas atmosphere.
The method of claim 1,
The heater
An apparatus for producing a silicon substrate using a spin casting method, wherein the silicon raw material is melted by an induction melting method.
delete The method of claim 1,
The rotational speed of the rotating plate is
Silicon substrate manufacturing apparatus using the spin casting method, characterized in that 1500 ~ 6000rpm.
The method of claim 1,
The casting part
Silicon substrate manufacturing apparatus using a spin casting method, characterized in that maintained at 600 ~ 1100 ℃.
The method of claim 1,
The manufacturing apparatus
And a gas supply unit for supplying an inert gas to the storage container to induce discharge of the molten silicon.
The method of claim 7, wherein
The inert gas is
An apparatus for producing a silicon substrate using a spin casting method, characterized in that it is argon.
The method of claim 1,
The manufacturing apparatus
A temperature measuring unit measuring a temperature of the melting unit;
And a control unit for controlling a surface temperature of the molten silicon using the temperature measuring unit.
A chamber providing a closed space with the outside;
A melting part disposed inside the chamber and having a storage container in which a silicon raw material is charged and a discharge hole is formed at a bottom thereof, and a heater mounted around the storage container to melt the charged silicon raw material;
A casting part disposed under the melting part and spin casting molten silicon dropped from the discharge hole; And
Includes; Cooling unit for cooling the molten silicon is spin cast
The casting part is a silicon substrate manufacturing apparatus using a spin casting method characterized in that it has a square mold rotating plate having a guide formed in the shape of a dome on the upper surface edge and a drive motor for controlling the rotational movement of the square mold rotating plate.
The method of claim 10,
The guide is
Silicon substrate manufacturing apparatus using the spin casting method, characterized in that formed of the same material as the body of the square mold rotating plate.
A chamber providing a closed space with the outside;
A melting part disposed inside the chamber and having a storage container in which a silicon raw material is charged and a discharge hole is formed at a bottom thereof, and a heater mounted around the storage container to melt the charged silicon raw material;
A casting part disposed under the melting part and spin casting molten silicon dropped from the discharge hole; And
Includes; Cooling unit for cooling the molten silicon is spin cast
The casting part has a spin casting method comprising a square mold rotating plate having a groove formed on an upper surface and a concave-convex pattern formed on a bottom surface of the groove, and a drive motor for controlling the rotational movement of the square mold rotating plate. Silicon substrate manufacturing apparatus used.
The method of claim 12,
The square mold rotating plate is
Silicon substrate manufacturing apparatus using a spin casting method characterized in that it further comprises a guide formed in the shape of a dome on the upper surface edge.
(a) charging a silicon raw material to a melting part;
(b) melting the charged silicon raw material; And
(c) supplying molten silicon dropped from the melting part to the rotating casting part to solidify while moving to the outside by centrifugal force caused by rotation of the casting part to form a silicon substrate;
In the step (c), the casting part is a silicon substrate manufacturing method using a spin casting method, characterized in that maintained at 600 ~ 1100 ℃.
delete The method of claim 14,
In the step (c),
And argon gas is supplied to the molten silicon to induce discharge of the molten silicon.
The method of claim 14,
In the step (c),
Rotational speed of the casting portion
Silicon ribbon manufacturing apparatus using a spin casting method, characterized in that 1500 ~ 6000rpm.

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