KR101048497B1 - Probe card and method for manufacturing the same - Google Patents

Abstract

PURPOSE: A probe card and a manufacturing method thereof are provided to reduce a fabrication time of a space transformer and to make it possible to replace a high priced ceramic multi layered substrate. CONSTITUTION: A probe(40) is formed in an upper side of a base substrate and is electrically connected to a semiconductor wafer. A conductive solder(36) is formed in a bottom surface of the base substrate and is electrically connected to the probe. A probe module(30) includes a plurality of probes and a plurality of conductive solders. A space transformer is bonded in a bottom surface of the probe module after being manufactured independently of the probe module. An upper plating layer made of a conductive type metal is electrically connected to a base contact.

Description

PROBE CARD AND METHOD FOR MANUFACTURING THE SAME

The present invention relates to a probe card used as a semiconductor inspection equipment and a method for manufacturing the same, and more particularly, to a probe card and a method for manufacturing the probe on the common substrate in a MEMS method.

In general, a probe card electrically connects a wafer and a semiconductor inspection device to test for defects during or after the manufacture of a semiconductor device such as a semiconductor memory or a flat panel display (FPD), thereby transmitting an electrical signal from the inspection device to the wafer. It is a device for transmitting to the formed semiconductor die (die), and transmits a signal from the semiconductor die to the semiconductor inspection equipment.

The conventional general probe card has a structure of a space transformer connected to a printed circuit board electrically connected to a semiconductor inspection equipment through an interposer, and a probe mounted on the space converter and connected to a wafer. .

The spatial transducer performs a function of pitch conversion between the probe and the printed circuit board to inspect a fine pitch contact pad, and is typically in the form of a multi layer ceramic (MLC) in which a green sheet is formed in multiple layers. Such a space converter has a complicated manufacturing process, which increases processing time and is expensive to manufacture.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems in the prior art, and a main problem is to provide a method that can drastically shorten the manufacturing process time of the space transducer.

Another object of the present invention is to provide a spatial converter of a new material having a relatively low cost and similar performance to that of a ceramic by replacing an expensive ceramic multilayer substrate.

In the probe card according to the present invention as a means for solving the above problems, the probe card comprises a space converter electrically connected to the printed circuit board, and a probe mounted on the space converter to connect to the wafer, the space The converter includes: a common substrate having a base contact made of a conductive metal material in a predetermined pattern; An upper plating layer formed of a conductive metal material on the upper surface of the common substrate and electrically connected to the base contact; An upper insulating layer of PI material formed on the upper surface of the common substrate in a MEMS manner; And an upper contact formed in the upper insulating layer in a MEMS manner and electrically connected to the upper plating layer.

The space converter may further include a lower plating layer of a conductive metal material formed on the bottom surface of the common substrate in a MEMS manner and electrically connected to the base contact; A lower insulating layer of PI material formed on the bottom surface of the common substrate in a MEMS manner; The lower contact layer is formed in the lower insulating layer in the MEMS method, the lower contact of the conductive metal material electrically connected to the lower plating layer; may be configured to further include.

The probe may include: a proximal end formed on an upper surface of the upper insulating layer to conduct electricity to the upper contact; A beam having one end fixed to an upper surface of the proximal end and extending in a lateral direction; And a probe tip protruding vertically from the other end of the beam.

In addition, the probe card according to the present invention is a probe having a base substrate, a plurality of probes formed on the upper surface of the base substrate and electrically connected to the semiconductor wafer, and a plurality of conductive solder formed on the bottom surface of the base substrate and electrically connected to the probe A module; And a plurality of pads formed on an upper surface of the space transducer and electrically connected to an upper contact, and thermally fused to respective conductive solders during bonding of the probe module and the space transducer.

In addition, the probe card according to the present invention, the first alignment key formed on the upper surface of the space transducer; And a second alignment key formed at a position corresponding to the first alignment key on the bottom surface of the probe module so that the conductive solder may be aligned on each pad during the bonding of the probe module and the space transducer. Can be.

Here, it is more preferable that one of the first alignment key and the second alignment key is made of a protrusion structure, and the other is made of a seating groove structure in which the protrusion structure can be accommodated.

In addition, the probe card according to the present invention is characterized in that the center of the conductive solder protrudes downward, the center of the pad is formed concave to accommodate the center of the protruding conductive solder.

In addition, the probe card according to the present invention is preferably made of a material that does not melt during the thermal fusion process of the conductive solder and the pad, the solder support portion inserted into the conductive solder to support the probe module; preferably further comprises a.

The method of manufacturing a probe card according to the present invention includes a process of manufacturing a space transducer electrically connected to a printed circuit board, and a process of forming a probe electrically connected to the space transducer. The manufacturing method of the space converter may include: a first step of manufacturing a common substrate having a base contact made of a conductive metal material in a predetermined pattern; A second step of forming an upper plating layer of a conductive metal material electrically connected to the base contact on an upper surface of a common substrate by a MEMS method; A third step of forming an upper insulating layer of PI material on the upper surface of the common substrate by a MEMS method; And a fourth step of forming an upper contact of a conductive metal material electrically connected to the upper plating layer in the upper insulating layer by MEMS.

The third step may be performed by applying a liquid PI material on the upper surface of the common substrate and baking the liquid PI material to form an upper insulating layer, or by pressing a solid PI material on the upper surface of the common substrate to form an upper insulating layer. .

In addition, the probe card manufacturing method according to the present invention, the fifth step of forming a lower plating layer of a conductive metal material electrically connected to the base contact on the bottom surface of the common substrate by MEMS method; A sixth step of forming a lower insulating layer of PI material on the bottom surface of the common substrate by a MEMS method; And forming a lower contact of a conductive metal material electrically connected to the lower plating layer inside the lower insulating layer by using a MEMS method.

In addition, the method of manufacturing a probe card according to the present invention further includes the eighth step of forming a plurality of pads electrically connected to an upper contact on an upper surface of the space transducer. Manufacturing a probe module including a plurality of probes formed on an upper surface of the base substrate and electrically connected to the semiconductor wafer, and a plurality of conductive solders formed on the bottom surface of the base substrate and electrically connected to the probes; Thermally fusion each conductive solder to a pad, thereby bonding the probe module and the space transducer.

According to the present invention, it is possible to significantly reduce the manufacturing time of the space transducer by laminating PI material on the common substrate by MEMS method.

In addition, according to the present invention, it is possible to provide a spatial converter of a PI material having a relatively low cost and similar performance to that of a ceramic by replacing an expensive ceramic multilayer substrate.

In addition, according to the present invention, in the process of bonding the space transducer and the probe module of the PI material, due to the structure of the corresponding alignment key and the conductive solder, it is possible to accurately align each solder on the pad.

In addition, according to the present invention, it is possible to more efficiently maintain the horizontal state of the probe module by the solder support portion inserted into the conductive solder.

1 is a cross-sectional view showing a probe card according to a first embodiment of the present invention.
2 is a cross-sectional view showing a probe card according to a second embodiment of the present invention.
3 is a cross-sectional view showing a probe card according to a third embodiment of the present invention.
4A and 4B are side cross-sectional and bottom views of a space converter according to a third embodiment of the present invention.
Figures 5a and 5b is a side cross-sectional view and a bottom view showing a probe module according to a third embodiment of the present invention.
6 is a cross-sectional view showing a conductive solder according to the present invention.
7 is a cross-sectional view showing a method of manufacturing a probe card according to the first embodiment of the present invention.
8 is a cross-sectional view illustrating a method of manufacturing a probe card according to a second embodiment of the present invention.
9 is a cross-sectional view showing a method for manufacturing a probe card according to a third embodiment of the present invention.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of a probe card and a manufacturing method according to the present invention.

1 to 3 illustrate a probe card structure according to the first to third embodiments of the present invention. 4A and 4B, and FIGS. 5A and 5B show the configuration of the space transducer and the probe module according to the third embodiment of the present invention, and FIG. 6 shows the structure of the conductive solder according to the present invention.

First, a probe card according to a first embodiment of the present invention will be described with reference to FIG. 1.

Referring to FIG. 1, a probe card according to a first embodiment of the present invention is mounted on a space converter 10 and a space converter 10 electrically connected to a printed circuit board electrically connected to a semiconductor inspection equipment. It is comprised including the probe 40 connected to a wafer.

Here, the printed circuit board receives an electrical signal transmitted from the semiconductor inspection equipment, and the received electrical signal is transmitted to the probe 40 through the space converter 10, while the signal transmitted from the probe 40 is reversed. It includes a circuit for transferring to the semiconductor inspection equipment.

The probe 40 has a probe structure for electrically connecting to a semiconductor wafer, and is formed on an upper surface of the space transducer 10.

The space transformer 10 includes a common substrate 1, an upper plating layer 11, an upper insulating layer 12, and an upper contact 13 formed on the upper surface of the common substrate 1 by a MEMS method. It is configured to include).

The common substrate 1 is a substrate in which a plurality of base contacts 2 made of a conductive metal material are formed therein in a predetermined pattern. That is, by separately preparing and preparing the common substrate 1 having the base contact 2 formed therein in a predetermined pattern according to the intention of the designer, it is possible to shorten the manufacturing process of the space converter 10.

The upper plating layer 11 is formed of a MEMS method on the upper surface of the common board, and is made of a conductive metal material electrically connected to the base contact 2 of the common board 1. It is preferable that a conductive metal material such as Cu or Au is used as the material of the upper plating layer 11.

The upper insulating layer 12 is formed in the MEMS method on the upper surface of the common substrate 1 and is made of a PI material. The PI (Polyimide) represents a general term for a heat resistant resin having an imide bond (-CO-NH-CO-) in its main chain. The PI material is characterized by high heat resistance and is the highest among engineering plastics. It belongs to the class and has the advantage that a characteristic does not age even if it uses for a long time especially at high temperature.

Conventionally, a ceramic material is mainly used to form an insulation layer of the space converter 10. However, when the space converter 10 is manufactured using the ceramic material, the manufacturing time of the space converter 10 is increased and expensive ceramics are manufactured. There was a problem that the price burden increases due to the material.

In order to solve this problem, the present invention is configured to manufacture the insulating layer of the space converter 10 from the PI material, which exhibits substantially similar performance as that of the ceramic material and can greatly shorten the manufacturing time and the price is relatively low. In particular, the conventional ceramic material has a difficulty in coping with the semiconductor wafer because the thermal expansion coefficient is different from that of the semiconductor wafer, but the PI material applied in the present invention can overcome the above problems due to high heat resistance. .

The upper contact 13 is formed in the upper insulating layer 12 by a MEMS method, and is made of a conductive metal material electrically connected to the upper plating layer 11. The probe 40 and the base contact 2 are electrically connected to each other through the upper contact 13 and the upper plating layer 11. As the material of the upper contact 13, a conductive metal material such as Cu or Au is preferably used.

In addition, it is preferable that the above-described upper plating layer 11, the upper insulating layer 12, and the upper contact 13 be formed on the upper surface of the common substrate 1 repeatedly.

Next, a probe card according to a second embodiment of the present invention will be described with reference to FIG. 2.

2, the probe card according to the second embodiment of the present invention, the upper plating layer 11, the upper insulating layer 12 of the PI material on the upper surface of the common substrate 1 as in the first embodiment described above The upper contact 13 is formed.

In addition, a lower plating layer 21 of a conductive metal material electrically connected to the base contact 2 is formed on the bottom surface of the common substrate 1 by a MEMS method, and the lower insulating layer 22 of a PI material is a MEMS method. Is formed. In addition, a lower contact 23 made of a conductive metal material electrically connected to the lower plating layer 21 is formed in the lower insulating layer 22 by a MEMS method.

Recently, the interval of the probe 40 is also minutely arranged to inspect the wafer having a finer circuit structure. Accordingly, a larger number of insulating layers are stacked on the space transducer 20 for pitch conversion of the probe 40. Should be.

However, there is a limit to stacking a plurality of insulating layers 12 only on the upper surface of the common substrate 1 as in the space converter 10 of the first embodiment described above. Therefore, to solve this problem, in the space transducer 20 of the second embodiment, the insulating layers 12 and 22 are formed on both the upper and lower surfaces of the common substrate 1, thereby stably converting the pitch of the probe 40. Can be applied more widely.

The lower plating layer 21, the lower insulating layer 22, and the lower contact 23 may be repeatedly formed on the bottom surface of the common substrate 1.

Meanwhile, in the above-described first and second embodiments, the probe 40 is formed on the upper surfaces of the space transducers 10 and 20 by the MEMS method.

The probe 40 has a proximal end 42 formed on the upper surface of the space transducers 10 and 20, a beam 44 extending laterally from the upper surface of the proximal end 42, and the other end of the beam 44. It is configured to include a probe tip 46 protruding from the vertical.

The proximal end 42 protrudes to a predetermined height on the space transducers 10 and 20 and is made of a conductive metal material.

The beam 44 has a structure extending in the lateral direction from the upper surface of the base end 42, one end is fixedly attached to the upper surface of the base end (42). The beam 44 has an arbitrary length in the lateral direction so as to elastically support the probe tip 46, and is made of a conductive metal material similarly to the base end 42.

At the other end of the beam 44, a probe tip 46 electrically connected to the semiconductor wafer protrudes vertically.

Next, a probe card according to a third embodiment of the present invention will be described with reference to FIG. 3.

Referring to FIG. 3, the probe card according to the third embodiment of the present invention may have an upper plating layer 11 and an upper insulating layer on the upper surface of the common substrate 1 as in the above-described first or second embodiment. 12) and the upper contact 13 are formed repeatedly in sequence, and the space converter in which the lower plating layer 21, the lower insulating layer 22, and the lower contact 23 are sequentially formed on the bottom surface of the common substrate 1 as necessary. Produce 10.

Unlike the first and second embodiments described above, the probe 40 is not directly formed on the upper surface of the space transducer 10, but the probe module 30 on which the probe 40 is formed may be connected to the space transducer 10. Make it separately.

The probe module 30 is formed on the base substrate 32, the plurality of probes 40 formed on the top surface of the base substrate 32 and electrically connected to the semiconductor wafer, and the bottom surface of the base substrate 32. And a plurality of conductive solders 36 electrically connected to 40.

In addition, a plurality of pads 16 are formed on the upper surface of the space transducer 10 and electrically connected to the upper contacts 13 at positions corresponding to the respective conductive solders 36.

In addition, the probe module 30 is bonded to the upper surface of the space converter 10, wherein each of the conductive solders 36 is thermally fused to the corresponding pad 16 so that the probe module 30 and the space converter 10 are connected to each other. Joining is possible.

Meanwhile, in the third embodiment, it is important to ensure that the respective conductive solders 36 and the pads 16 are accurately aligned in the process of bonding the probe module 30 and the space transducer 10.

To this end, as shown in Figures 4a and 4b, the upper surface of the space transducer 10 according to the third embodiment of the present invention, each conductive in the bonding process of the probe module 30 and the space transducer 10 A first alignment key 18 may be formed to align the alignment between the solder 36 and the pad 16. In this case, the first alignment key 18 may have a mounting groove structure in which the second alignment key 38 of the probe module 30 to be described later may be accommodated.

In addition, the pad 16 may have a conventional flat structure, but more precisely the alignment between the conductive solder 36 and the pad 16 during the bonding process of the probe module 30 and the space transducer 10. In order to fit, a concave groove may be formed in the center of the pad 16 so that the conductive solder 36 can be inserted.

5A and 5B, the conductive solder 36 and the pad 16 are disposed on the bottom surface of the probe module 30 according to the third embodiment of the present invention at a position corresponding to the first alignment key 18. A second align key 38 can be formed to align the alignment between In other words, the first alignment key 18 and the second alignment key 18 may be accurately aligned with the top surface of the pad 16 during the bonding process between the probe module 30 and the space transducer 10. The align key 38 is formed at a position corresponding to each other.

In addition, the second alignment key 38 has a protrusion structure protruding downward from the bottom surface of the base substrate 32, and the seating groove structure described above in the bonding process between the probe module 30 and the space transducer 10. It may be configured to be inserted into the first alignment key 18 of the. On the contrary, the first alignment key 18 may have a protrusion structure, and the second alignment key 38 may have a seating groove structure for accommodating the first alignment key 18. have.

In addition, the second alignment key 38 has a cross-shaped protrusion structure of "+" shape, and the first alignment key 18 corresponding thereto is also configured to have a cross-shaped seating groove structure. It is preferable to facilitate the fastening of the 18 and the align key 38.

The conductive solder 36 may be formed of a conventional flat structure or a ball structure, but is aligned between the respective conductive solder 36 and the pad 16 during the bonding process of the probe module 30 and the space transducer 10. In order to more precisely fit, the center of the conductive solder 36 may be configured to protrude to form a projection for insertion into the concave center of the above-described pad (16). Accordingly, in the process of bonding the probe module 30 and the space transducer 10, the protruding center portion of the conductive solder 36 is inserted into the concave center portion of the pad 16, thereby providing the respective conductive solder 36 and the pad 16. The alignment between can be made more accurately.

On the other hand, the conductive solder 36 according to the present invention should be made of a material that can melt the surface by heat, a plurality of conductive solder 36 may not all melt to the same level. That is, when some of the conductive solder 36 is further melted in the process of bonding the conductive solder 36 to the pad 16 while the conductive solder 36 is melted by external heat, the thickness of the conductive solder 36 is lowered and the pro-module module is lowered. There may be a problem that the horizontal state of 30 is not maintained.

In order to prevent such a problem, the conductive solder 36 according to the present invention, as shown in Figure 6, the solder support 35 made of a material that does not melt during the thermal fusion process of the conductive solder 36 and the pad 16 ) Is configured to have a structure that is inserted therein. Therefore, even if some of the conductive solder 36 is melted more than necessary, because the solder support 35 inserted therein can support the probe module 30 in the unmelted state, the horizontal state of the probe module 30 Can be maintained.

Hereinafter, a description will be given of a method of manufacturing a probe card according to each embodiment of the present invention described above.

7 shows a manufacturing process of the probe card according to the first embodiment of the present invention.

The method of manufacturing a probe card according to the first embodiment of the present invention includes a process of manufacturing a space converter 10 electrically connected to a printed circuit board electrically connected to a semiconductor inspection equipment, and electrically connected to the space converter 10. It is configured to include a process of forming a probe 40 connected to.

7, the manufacturing process of the space transducer 10 in the method of manufacturing a probe card according to the first embodiment of the present invention is performed in the following order.

First, a common substrate 1 on which a base contact 2 of a conductive metal material is formed in a predetermined pattern is manufactured (a).

In addition, an upper plating layer 11 of a conductive metal material electrically connected to the base contact 2 is formed on the upper surface of the common substrate 1 by a MEMS method (b).

For example, a seed layer is formed by depositing a conductive metal material such as Cu or Au on the upper surface of the common substrate 1, and after forming a photoresist layer by applying a photoresist in a dot pattern on the seed layer, a mask pattern is formed. As a result, the seed layer of the dot pattern is formed by etching and removing the remaining seed layers except for the portion where the upper plating layer 11 is to be formed. Thereafter, the upper plating layer 11 is formed by plating a metal material on the seed layer of the dot pattern.

Then, the upper insulating layer 12 of PI material is formed on the upper surface of the common substrate 1 by the MEMS method (c).

For example, the upper insulating layer may be formed by coating a liquid PI material on the upper surface of the common substrate 1 on which the upper plating layer 11 is formed and then firing or compressing the solid PI material on the upper surface of the common substrate 1. 12) can be formed.

Thereafter, an upper contact 13 of a conductive metal material electrically connected to the upper plating layer 11 is formed in the upper insulating layer 12 by a MEMS method (d).

For example, a via hole communicating with the upper plating layer 11 is formed in the upper insulating layer 12 by forming a photoresist layer and mask patterning, and plating a conductive metal material such as Cu or Au in the via hole. As a result, an upper contact 13 electrically connected to the upper plating layer 11 is formed in the upper insulating layer 12.

On the upper insulating layer 12 formed as described above, the formation process of the upper plating layer 11, the upper insulating layer 12, and the upper contact 13 is repeated several times to complete the space converter 10. (e).

Meanwhile, reference numeral 14 denotes an LGA pad for electrically connecting the space converter 10 to the printed circuit board.

8 shows a manufacturing process of a probe card according to a second embodiment of the present invention.

Referring to FIG. 8, the manufacturing process of the space transducer 20 in the method of manufacturing a probe card according to the second embodiment of the present invention is performed in the following order.

First, in the same manner as in the first embodiment, the upper plating layer 11, the upper insulating layer 12, and the upper contact 13 are sequentially formed on the upper surface of the common substrate 1.

Thereafter, a lower plating layer 21 made of a conductive metal material electrically connected to the base contact 2 is formed on the bottom surface of the common substrate 1 by using a MEMS method (a). The lower plating layer 21 may be formed by the same MEMS method as the upper plating layer 11.

Then, the lower insulating layer 22 of PI material is formed on the bottom surface of the common substrate 1 by the MEMS method (b).

For example, the lower insulating layer may be formed by coating a liquid PI material on the bottom surface of the common substrate 1 on which the lower plating layer 21 is formed and then firing or compressing a solid PI material on the bottom surface of the common substrate 1. 22) can be formed.

Thereafter, a lower contact 23 of a conductive metal material electrically connected to the lower plating layer 21 is formed in the lower insulating layer 22 by using a MEMS method (c). The lower contact 23 may be formed in the same MEMS method as the upper contact 13.

Meanwhile, reference numeral 24 denotes an LGA pad for electrically connecting the space converter 20 to the printed circuit board.

After manufacturing the space transducers 10 and 20 according to the first or second embodiment, the probe 40 is formed on the top surface of the space transducers 10 and 20 by MEMS.

First, the base end 42 is formed on the space transducer. For example, after the photoresist is formed on the space transducers 10 and 20 to form a photoresist layer, a portion where the base end portion 42 is to be formed is exposed by exposure to a mask pattern, and then exposed to conductive. The base end part 42 is formed by apply | coating and laminating | stacking metal.

When the base end portion 42 is manufactured by the MEMS method, the height of the base end portion 42 may be appropriately adjusted by repeating the photoresist coating and the lamination process of the conductive metal.

And one end is fixedly attached to the upper surface of the base end 42, and forms a beam 44 extending in the lateral direction. For example, after the photoresist is applied to form a photoresist layer, the portion on which the beam 44 is to be formed is exposed by exposure under a mask pattern, and then a conductive metal is applied to the exposed portion to apply the beam 44. To form.

Finally, the probe tip 46, which is electrically connected to the semiconductor wafer, is formed to protrude perpendicularly from the other end of the beam 44. For example, a process of applying photoresist on the other end of the beam 44 to form a photoresist layer, and then developing and exposing a portion where the probe tip 46 is to be formed according to a mask pattern by exposure; By repeating the process of applying and laminating a conductive metal on the surface, a probe tip 46 having an appropriate height is formed.

9 shows a manufacturing process of the probe card according to the third embodiment of the present invention.

Referring to FIG. 9, in the method of manufacturing a probe card according to the third embodiment of the present invention, the space transducer 10 is manufactured in the same manner as the above-described first or second embodiment, and the probe 40 is formed. After the probe module 30 is separately manufactured, the probe module 30 and the space transducer 10 are electrically connected to each other.

That is, similarly to the first or second embodiment described above, the upper plating layer 11, the upper insulating layer 12, and the upper contact 13 are sequentially formed on the upper surface of the common substrate 1 in succession. Accordingly, a space converter 10 in which the lower plating layer 21, the lower insulating layer 22, and the lower contact 23 are sequentially formed on the bottom surface of the common substrate 1 is manufactured.

The probe module 30 having the probe 40 formed thereon is manufactured separately from the space transducer 10. The probe module 30 is formed on the base substrate 32 and the upper surface of the base substrate 32 to form a semiconductor wafer. A plurality of probes 40 to be electrically connected and a plurality of conductive solders 36 formed on the bottom surface of the base substrate 32 and electrically connected to the probes 40 are formed.

In addition, a plurality of pads 16 electrically connected to the upper contact 13 are formed at positions corresponding to the respective conductive solders 36 on the upper surface of the space transducer 10.

In addition, the probe module 30 is bonded to the upper surface of the space converter 10, wherein each of the conductive solders 36 is thermally fused to the corresponding pad 16 so that the probe module 30 and the space converter 10 are connected to each other. Joining is possible.

As such, in the bonding process between the probe module 30 and the space transducer 10, the alignment between the conductive solder 36 formed on the bottom surface of the probe module 30 and the pad 16 formed on the top surface of the space transducer 10 is performed. The most important thing is to meet. If the alignment is not performed properly between some of the conductive solder 36 and the pad 16, the electrical signal transmission between the probe 40 and the printed circuit board is not made, which may lead to a defect of the probe card. to be.

To this end, in the method of manufacturing a probe card according to the third embodiment of the present invention, the first alignment key 18 and the second alignment formed at corresponding positions of the probe module 30 and the space transducer 10 are provided. The key 38 is used to align the alignment between the conductive solder 36 and the pad 16.

Alternatively, the probe may be accommodated in the first alignment key 18 of the seating groove structure formed on the upper surface of the space transducer 10, the second alignment key 38 of the protrusion structure formed on the bottom surface of the probe module 30. It may also be carried out by bringing the module 30 into contact with the top surface of the space transducer 10.

When the second alignment key 38 is received in the first alignment key 18 as described above, each of the conductive solders 36 is in contact with the pads 16 at the corresponding positions, where the conductive solders 36 The protruding center of the pad is inserted into the concave center of the pad 16.

As such, in the state where each conductive solder 36 is in contact with the corresponding pad 16, when the conductive solder 36 is heated, the surface of the conductive solder 36 is melted and thermally fused to the pad 16. As shown in FIG. 4B, a probe card in which the probe module 30 is electrically connected to the space transducer 10 may be completed.

While the invention has been shown and described with respect to the specific embodiments thereof, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined by the appended claims. Anyone with it will know easily.

One; Common substrate 2; Base contact
10, 20; Space converter 11; Upper plating layer
12; Upper insulating layer 13; Upper contact
16; Pad 18; First alignment key
21; Lower plating layer 22; Lower insulation layer
23; Bottom contact 30; Probe module
32; Base substrate 36; Conductive solder
38; Second alignment key 40; Probe

Claims (17)

A probe module having a base substrate, a plurality of probes formed on an upper surface of the base substrate and electrically connected to the semiconductor wafer, and a plurality of conductive solders formed on the bottom surface of the base substrate and electrically connected to the probes;
And a space transducer manufactured separately from the probe module and bonded to a bottom surface of the probe module.
The space converter,
A common substrate having a base contact made of a conductive metal material in a preset pattern;
An upper plating layer formed of a conductive metal material on the upper surface of the common substrate and electrically connected to the base contact;
An upper insulating layer of PI material formed on the upper surface of the common substrate in a MEMS manner;
An upper contact formed in the upper insulating layer by a MEMS method and electrically connected to the upper plating layer;
And a plurality of pads formed on an upper surface thereof and electrically connected to upper contacts, and thermally fused to respective conductive solders in a bonding process with the probe module.
A first align key of a seating groove structure formed on an upper surface of the space transducer;
The first alignment key of the mounting recess structure is formed at a position corresponding to the first alignment key on the bottom surface of the probe module so that the conductive solder may be aligned on each pad during the bonding process of the probe module and the space transducer. A second alignment key of the protrusion structure accommodated in the;
Probe card, characterized in that comprising a. The method of claim 1,
The space converter,
A lower plating layer formed of a conductive metal material on a bottom surface of the common substrate and electrically connected to the base contact;
A lower insulating layer of PI material formed on the bottom surface of the common substrate in a MEMS manner;
A lower contact made of a conductive metal material formed in the lower insulating layer in a MEMS manner and electrically connected to the lower plating layer;
Probe card further comprising. The method of claim 1 or 2, wherein the probe is
A proximal end formed on an upper surface of the upper insulating layer to conduct electricity with the upper contact;
A beam having one end fixed to an upper surface of the proximal end and extending in a lateral direction;
A probe tip protruding vertically from the other end of the beam;
Probe card, characterized in that comprising a. delete delete delete The method of claim 1,
And a center portion of the conductive solder protrudes downward, and a center portion of the pad is concave to receive the center portion of the protruding conductive solder. The method of claim 1,
A solder support portion formed of a material that is not melted during thermal fusion of the conductive solder and the pad and inserted into the conductive solder to support the probe module;
Probe card further comprising. Manufacturing a probe module including a base substrate, a plurality of probes formed on an upper surface of the base substrate and electrically connected to the semiconductor wafer, and a plurality of conductive solders formed on the bottom surface of the base substrate and electrically connected to the probes;
A first step of manufacturing a common substrate on which a base contact of a conductive metal material is formed in a predetermined pattern, a second step of forming an upper plating layer of a conductive metal material electrically connected to the base contact on an upper surface of the common substrate by a MEMS method, A third step of forming an upper insulating layer of PI material on the upper surface of the common substrate by a MEMS method, and a fourth step of forming an upper contact of conductive metal material electrically connected to the upper plating layer on the upper insulating layer by a MEMS method A manufacturing method of a space transducer including a plurality of pads formed on the upper surface thereof and electrically connected to the upper contact;
Thermally fusing each conductive solder to a pad, thereby electrically connecting the probe module and the space transducer.
The first alignment key of the seating groove structure is formed on the upper surface of the space transducer,
A second alignment key having a protrusion structure accommodated in the first alignment key is formed on the bottom of the probe module so that the conductive solder may be aligned on each pad during the bonding of the probe module and the space transducer.
A method of manufacturing a probe card, comprising: bonding a conductive solder to a pad by applying heat to the conductive solder while the probe module is aligned on the space transducer so that the second alignment key can be inserted into the first alignment key. 10. The method of claim 9,
In the third step,
Probe card manufacturing method characterized in that the upper insulating layer is formed by applying a liquid PI material on the upper surface of the common substrate and firing. 10. The method of claim 9,
In the third step,
Probe card manufacturing method characterized in that the upper insulating layer is formed by pressing a solid state PI material on the upper surface of the common substrate. 10. The method of claim 9,
A fifth step of forming a lower plating layer of a conductive metal material electrically connected to the base contact on a bottom surface of a common substrate by a MEMS method;
A sixth step of forming a lower insulating layer of PI material on the bottom surface of the common substrate by a MEMS method;
A seventh step of forming a lower contact of a conductive metal material electrically connected to the lower plating layer in the lower insulating layer by MEMS;
Probe card manufacturing method characterized in that it further comprises. The method according to any one of claims 9 to 12, wherein the probe forming step,
Forming a proximal end portion on which the upper contact is energized, the upper surface of the upper insulating layer;
Forming a beam having one end fixed to the upper surface of the proximal end and extending in a lateral direction;
Forming a probe tip protruding vertically from the other end of the beam;
Probe card manufacturing method characterized in that it comprises a. delete delete 10. The method of claim 9,
The center of the conductive solder protrudes downward,
The center of the pad is concave to receive the center of the protruding conductive solder,
And a protruding center portion of the conductive solder is inserted into the concave center portion of the pad during the bonding of the probe module and the space transducer. 10. The method of claim 9,
And a solder support portion made of a material which is not melted during thermal fusion of the conductive solder and the pad is inserted into the conductive solder to support the probe module.

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