KR101020841B1 - CMOS device and fabricating method the same - Google Patents

Abstract

The present invention relates to a CMOS device in which a P-type MISFET and an N-type III-V compound HEMT are integrated in a batch manufacturing method on a silicon substrate such as a wafer, and a manufacturing method thereof.

Specifically, the present invention provides a CMOS device including a P-type and an N-type FET having a metal gate and a source and a drain region, comprising: a silicon substrate having first and second regions defined therein; A P-type MISFET formed in the first region of one surface of the silicon substrate; A first passivation layer covering the MISFET and the first region; An N-type HEMT formed in the second region of one surface of the silicon substrate; A second passivation layer covering the first passivation layer, the HEMT, and the second region; A first gate, source, and drain electrode connected to the first metal gate, source, and drain regions of the MISFET through the first and second passivation layers, respectively; The present invention provides a CMOS device including a second gate, a source, and a drain electrode connected to a second metal gate, a source, and a drain region of the HEMT through the second passivation layer, and a method of manufacturing the same.

Description

CMOS device and its manufacturing method {CMOS device and fabricating method the same}

The present invention relates to a CMOS device (Complementary Metal Oxide Semiconductor device) and a method of manufacturing the same, and more particularly, P-type metal insulator semiconductor field effect transistor (NISFET) and N-type on a silicon substrate (substrate) such as wafer (wafer) The present invention relates to a CMOS device in which a III-V compound HEMT (High Electron Mobility Transistor) is integrated by a batch fabrication method and a method of manufacturing the same.

Recently, as society entered the era of full-fledged informatization, the development of semiconductors for large-capacity information processing was followed, and accordingly, CMOS devices (Field Effect Transistors (FETs)) using field effect transistors (FET) were developed. Efforts are being made to achieve high integration and high speed operation.

In general, a CMOS device is a wide range of monolithic circuits in which P-type and N-type FETs are integrated into a substrate by a batch fabrication method. The FET, which is a basic element thereof, includes a unipolar layer including a semiconductor layer, which is a moving channel of electrons or holes, and a gate, a source, and a drain electrode. Device), a switching operation of selectively connecting the source and drain electrodes with the gate voltage of the gate electrode. At this time, as is well known, the case where the gate electrode of the FET is formed of metal to use a schottky junction between metals and semiconductors is called a MESFET (Metal Semiconductor FET), and the semiconductor layer and the gate electrode of the metal are insulated (eg, The case of separating the gate insulating film) is referred to as a metal insulator semiconductor FET (MISFET), and the case of using an oxide layer as the insulating layer is referred to as a metal oxide semiconductor FET (MOSFET).

Meanwhile, as the trend toward miniaturization, weight reduction, and thinning of various electronic devices has increased, the scale-down of CMOS devices has been mainly made, and thus the performance of devices has been raised.

However, shrinking the size of CMOS devices reduces the effective channel length of the FET, causing punch through and short channel effects, and reducing the thickness of the gate insulating film causes an exponential increase in the tunneling effect. It is a fundamental constraint on performance improvement.

Accordingly, as a new strategy for improving the performance of the CMOS device, a method of replacing the channel layer of the FET with a new material from the existing Si has been attracting attention.

Specifically, in the case of the P-type FET, an improved effect can be obtained by using Ge having high hole mobility as the channel layer, and in the case of the N-type FET, electron mobility is obtained in the channel layer. The use of a high III-V compound can greatly improve its performance.

Accordingly, a method of replacing the traditional Si channel layer with a Ge channel layer was introduced to improve the performance of the P-type EFT, and a heterostructure III such as GaAs or InP was used to improve the performance of the N-type FET device. A method of using a -V compound semiconductor layer has been introduced. In this case, in the case of using a III-V compound semiconductor layer, a high electron mobility transistor (HEMT) having a groove shape by modulation doping is used to solve the problems caused by oxide film deposition and ion doping. Structure, which is otherwise called a modulation doped FET.

However, the implementation of COMS devices using FETs using Ge channel layers, that is, Ge channel layer FETs and III-V compound HEMTs, has some precedents.

First, the Ge channel layer FET using Si substrates and the III-V compound HEMTs using GaAs or InP as substrates exhibit a completely different substrate structure, which makes it difficult to implement a batch manufacturing method on a single substrate, and even if possible, the manufacturing cost. In view of the production yield and the like, the utility is very poor.

In addition, the Ge channel layer FET and the III-V compound HEMT show various differences in the manufacturing process. For example, the silicide process for the source and drain regions of the Ge channel layer FET requires high temperature annealing of 600 ° C. or higher. The ohmic contact process for the source and drain regions of the III-V compound HEMT requires a low temperature environment of 350 ° C or lower. Therefore, the batch fabrication method that ignores the thermal durability inherent in the device can cause fatal thermal damage to the III-V compound HEMT. The above problem is when the P-type FET and the III-V compound HEMT are integrated on a silicon substrate such as a wafer. The same appears in.

Accordingly, an object of the present invention is to provide a specific method for integrating Si- or Ge-based P-type FETs and N-type III-V compound HEMTs on the same substrate in a batch manufacturing method. .

That is, the present invention is to integrate the Si or Ge-based P-type FET and the N-type III-V compound HEMT having a different substrate structure on the same substrate in a batch manufacturing method, the thermal damage that can be applied to the III-V compound HEMT It is an object of the present invention to provide a CMOS device and a method of manufacturing the same, which can minimize manufacturing cost and yield.

The present invention provides a CMOS device including a P-type and an N-type FET having a metal gate and a source and a drain region, the silicon substrate in which the first and second regions are defined; A P-type MISFET formed in the first region of one surface of the silicon substrate; A first passivation layer covering the MISFET and the first region; An N-type HEMT formed in the second region of one surface of the silicon substrate; A second passivation layer covering the first passivation layer, the HEMT, and the second region; A first gate, source, and drain electrode connected to the first metal gate, source, and drain regions of the MISFET through the first and second passivation layers, respectively; The semiconductor device may include a second gate, a source, and a drain electrode connected to the second metal gate, the source, and the drain region of the HEMT through the second passivation layer.

At this time, the silicon substrate is characterized in that the Si wafer, the silicon substrate, Si base layer; A Ge layer on one surface of the Si base layer; And a Si cap layer on one surface of the Ge layer, wherein the MISFET has a coplanar structure further comprising a gate insulating film interposed between the silicon substrate and the first metal gate. It is characterized by a high dielectric constant insulating film (high-k).

The HEMT may further include a III-V compound semiconductor layer having a heterojunction structure selectively crystal-grown in the second region of one surface of the silicon substrate, wherein the silicon substrate may include the first and second regions. It further comprises a trench for insulating.

In addition, the present invention provides a method for manufacturing a CMOS device including a P-type and an N-type FET having a metal gate and a source and drain regions, comprising the steps of: (a) preparing a silicon substrate in which the first region and the second region are defined; ; (b) forming a P-type MISFET in the first region of one surface of the silicon substrate; (c) forming a first passivation layer covering the MISFET and the first region; (d) forming an N-type HEMT in the second region of one surface of the silicon substrate; (e) forming a second passivation layer covering the first passivation layer, the HEMT, and the second region; (f) a first gate, a source and a drain electrode connected to the first metal gate, the source and the drain region of the MISFET through the first and the second passivation layers, respectively; A method of manufacturing a CMOS device includes forming a second gate, a source, and a drain electrode respectively connected to a second metal gate, a source, and a drain region.

At this time, after step (a) and before step (b), (a1) forming a Ge layer on one surface of the silicon substrate; (a2) forming a Si cap layer on one surface of the Ge layer, wherein step (b) comprises: (b1) forming a gate insulating film on one surface of the silicon substrate; (b2) forming a first metal gate of the MISFET on one surface of the gate insulating film; (b3) forming a sidewall at an edge of the first metal gate and removing the gate insulating layer except for the lower ends of the first metal gate and the sidewall; (b4) doping the silicon substrate at the edge of the sidewall with a P-type impurity; (b5) forming a first source and a drain region of the MISFET in the P-type impurity doped region, wherein (b2) comprises: depositing a first metal thin film; It characterized in that it comprises a first photolithography step.

In addition, the step (b3), the insulating film deposition step; It characterized in that it comprises an anisotropic etching step, wherein step (b4), the second photolithography step; Doping the P-type impurity; It characterized in that it comprises a high temperature annealing step of 600 ℃ or more, wherein step (b5), the second metal thin film deposition step; A third photolithography step; It characterized in that it comprises a silicide step by high temperature annealing of at least 600 ℃.

In addition, the gate insulating layer is a high-k dielectric layer (high-k), and after the step (b), before the step (c), forming a trench for separating the first and second regions on the silicon substrate It characterized in that it further comprises a step, wherein step (c), the first nitride film deposition step; And a fourth photolithography step.

In addition, the step (d) may include: (d1) forming a III-V compound semiconductor layer having a heterojunction structure with Selective Epitaxial Growth (SEG) in the second region of the silicon substrate; (d2) forming second source and drain regions of the HEMT on the III-V compound semiconductor layer of the heterojunction structure; (d3) etching a gate recess of the heterojunction III-V compound semiconductor layer to form a groove; (d4) forming a second metal gate of the HEMT in the groove, wherein (d2) comprises: depositing a third metal thin film; A fifth photolithography step; It characterized in that it comprises a silicide step by a low temperature annealing of 350 ℃ or more, the step (d4), the fourth metal thin film deposition step; And a sixth photolithography step.

In addition, the step (e) is characterized in that it comprises a second nitride film deposition step, the step (f), (f1) through the seventh photolithography step, through the first and second protective film First through third contact holes exposing the first metal gate, the source and the drain regions of the MISFET, and through the second passivation layer to expose the second metal gate, the source and the drain regions of the HEMT, respectively. Forming fourth to sixth contact holes; (f2) forming the first and second gate, source, and drain electrodes through a fifth metal thin film deposition step and an eighth photolithography step.

As described above, the CMOS device according to the present invention integrates a P-type MISFET having a high hole mobility and a III-V compound HEMT having a high electron mobility in a batch manufacturing method on the same substrate. For example, there is an advantage that can be applied to the RF field or MMIC.

In particular, the present invention provides a CMOS device and a manufacturing method thereof that can reduce manufacturing cost and manufacturing yield while minimizing thermal damage that may be applied to the III-V compound HEMT. The range is very wide.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

1 is a schematic cross-sectional view of a CMOS device according to the present invention.

As can be seen, the CMOS device according to the present invention comprises an N-type FET and a P-type FET integrated on a single silicon substrate 2, wherein the P-type FET includes a semiconductor layer made of a Group 4 element of Si or Ge; The MISFET 20 includes a first metal gate 22 and source and drain regions 32 and 34, and an N-type FET includes a III-V compound semiconductor layer 52, a second metal gate 66, a source and It is characterized in that the HEMT (50) including the drain regions (62, 64).

More specifically, for convenience, when the silicon substrate 2 is divided into the first region A and the second region B, the MISFET 20 is integrated in the first region A on one surface of the silicon substrate 2. The second passivation layer is covered with a passivation layer 40 and the HEMT 50 is integrated in the second region B on one surface of the silicon substrate 2 to cover the MISFET 20 and the first passivation layer 40. Covered with 70). The first and second passivation layers 40 and 70 corresponding to the first region A may expose first to second metal gates 22 and the source and drain regions 32 and 34 of the MISFET 20. A third contact hole C1, C2, C3 penetrates to connect the first gate, source, and drain electrodes 72, 74, and 76, and a second passivation layer 70 corresponding to the second region B. ) Passes through the second metal gate 66 of the HEMT 50 and the fourth through sixth contact holes C4, C5, and C6 exposing the source and drain regions 62 and 64 to pass through the second gate, the source, Drain electrodes 82, 84 and 86 are connected.

In this case, as the silicon substrate 2, an Si wafer may be used as an example, and a Ge layer 4 and a Si cap layer 6 may be sequentially stacked on one surface thereof. In this case, preferably, the silicon substrate 2 may have a form in which a Ge single crystal layer is grown on a Si single crystal wafer, and then a single crystal or polycrystalline Si layer is stacked, and the boundary between the first and second regions A and B is formed. Thus, trenches 10 are formed for isolation between devices.

In addition, the MISFET 20 located in the first region A of the silicon substrate 2 may have a coplanar structure in which a sidewall 24 is formed, and the Si cap layer on one surface of the silicon substrate 2 may be formed. 6) and a gate insulating film 8 interposed between the first metal gate 22 and the sidewall 24, and a doped region doped with P-type impurities on both sides of a channel layer (not shown) at the lower side thereof ( 26 and 28 are formed, and the first source and drain regions 32 and 34 formed by silicide are formed in the doped regions 26 and 28, respectively. In this case, a high dielectric constant high-k may be preferably used for the gate insulating film 8.

As a result, since the MISFET 20 of the CMOS device according to the present invention shows the shape of a Ge-based MISFET, high hole mobility can be expected, but depending on the purpose, the Ge layer 4 and the Si cap layer 6 are omitted. The form of a conventional Si substrate MISFET may be shown.

The MISFET 20 is concealed by the first passivation layer 40 covering the first region A of the silicon substrate 2.

In addition, the HEMT 50 located in the second region B of the silicon substrate 2 includes the III-V compound semiconductor layer 52, and the Si cap layer of the second region B of the silicon substrate 2 6) The III-V compound semiconductor layer 52 is formed by selective epitaxial growth, and the second source and drain regions 62 and 64 are formed on the upper surface thereof by metal layer formation and silicide of annealing, respectively. The groove 59 is formed by the gate recess etching between the second source and drain regions 62 and 64 so that the second metal gate 66 is positioned.

As a result, since the HEMT 50 of the CMOS device according to the present invention uses the III-V compound semiconductor layer 52, high electron mobility can be expected.

In addition, the HEMT 50 is concealed by a second passivation layer 70 covering the first passivation layer 40 and the second region B, and the first corresponding to the first area A of the silicon substrate 2. And first to third contact holes C1, C2, and C3 are formed in the second passivation layers 40 and 70 to form the first metal gate 22 and the source and drain regions 32 and 34 of the MISFET 20. The first gate, source, and drain electrodes 72, 74, and 76 extending therethrough are connected to each other, and the fourth to sixth contact holes C4 and C5 are formed in the second passivation layer 70 corresponding to the second region B. C6 is formed so that the second metal gate 66 of the HEMT 50 and the second gate, source, and drain electrodes 82, 84, and 86 extending through the source and drain regions 62, 64 are connected through, respectively. do.

Hereinafter, a method of manufacturing a CMOS device according to the present invention will be described in order.

2 to 9 are cross-sectional views of a CMOS device according to a process sequence of the present invention, which will be referred to together with FIG. 1.

First, the silicon substrate 2 is prepared.

In this case, the Si substrate 2 may be a Si single crystal wafer, and if necessary, a silicon on insulator (SOI) substrate in which single crystal Si is grown on an insulating substrate such as glass, spinel, sapphire, or the like may be used.

Next, Ge is grown on one surface of the silicon substrate 2 to form a Ge layer 4.

In this case, the silicon substrate 2 is a Si base layer, the Ge layer 4 may be a single crystal Ge obtained through a conventional crystal growth method, the thickness may vary depending on the process conditions, but more than a certain hole mobility It may be appropriately selected within the range that indicates and does not appear a crystal defect.

Next, Si is grown on one surface of the Ge layer 4 to form the Si cap layer 6.

At this time, the Si cap layer (6) is to protect the Ge layer (4) during the process, it can be obtained by a conventional crystal growth method.

Next, a dielectric material is deposited on one surface of the Si cap layer 6 to form a gate insulating film 8.

In this case, the gate insulating film 8 may be a so-called high-k dielectric film made of a high dielectric material having a dielectric constant of 4.0 or more, preferably 7.0 or more.

Next, the first metal gate 22 is formed on one surface of the gate insulating film 8 of the first region A of the silicon substrate 2.

In this case, the first metal gate 22 may be obtained by a first metal thin film deposition and a first photo-lithography process, and an etching method and a lift-off method may be used. . Briefly, the double etching method is performed by depositing a first metal thin film on one surface of the gate insulating film 8 by a conventional thin film deposition method, applying a photo-resist, and then exposing and developing using a mask. A photoresist pattern is formed. In this case, the photoresist pattern is formed at a position corresponding to the first metal gate 22 under the premise that the photoresist is a positive type in which the lighted portion is cured, and the photoresist pattern is subjected to a subsequent etching process. The first metal gate 22 is removed by removing the first metal thin film layer other than the concealed portion, and the first metal gate 22 is completed through a strip and a cleaning process to remove residual photoresist. In addition, when the lift-off method is briefly described, the photoresist pattern is formed as the remaining portion outside the region corresponding to the first metal gate 22, and then the first metal thin film is deposited by a conventional thin film deposition method, followed by the photoresist pattern. Stripping to form the first metal gate 22 by the residual metal layer. Hereinafter, the photolithography process generally refers to a series of processes, such as exposure and development, etching or lift-off, stripping and cleaning using a photoresist coating and a mask.

As a result, as shown in FIG. 2, the Ge layer 4, the Si cap layer 6, and the gate insulating film 8 are sequentially stacked on one surface of the silicon substrate 2, and the first region A of one surface of the silicon substrate 2 is laminated. An island-shaped first metal gate 22 is completed on the gate insulating film 8.

Next, a nitride-based insulating film is deposited on one surface of the silicon substrate 2 on which the first metal gate 22 is formed, and then anisotropic etching is performed to form sidewalls 24 at the edges of the first metal gate 22. At the same time, the gate insulating film 8 other than the portion concealed by the first metal gate 22 and the side wall 24 is removed.

Next, a second photolithography process is performed along both side edges of the sidewalls 24, and the doping regions 26 and 28 are formed by implanting P-type impurity ions and activating them by high temperature annealing at 600 ° C or higher.

Next, a thin second metal thin film is deposited on the entire surface of the silicon substrate 2 having the first metal gate 22, the sidewalls 24, and the doped regions 26 and 28, and the third photolithography. The first source and drain regions 32 and 34 by silicide are formed through a process or a lift-off process and a high temperature annealing process of 600 ° C. or higher.

Thus, as shown in FIG. 3, the P-type MISFET 20 is completed in the first region A on one surface of the silicon substrate 2.

Next, device isolation is performed along the boundary between the first and second regions A and B of one surface of the silicon substrate 2.

To this end, a method of forming a trench 10 by etching a portion of the silicon substrate 2 including the Si cap layer 6 and the Ge layer 4 may be used. If necessary, an STI (Shallow) filling a dielectric of an oxide layer in the trench may be used. Trench Isolation methods and additional densification or planarization steps may be followed.

Thus, as shown in FIG. 4, the silicon substrate 2 is electrically separated into the first and second regions A and B by the trench 10 and the P-type MISFET 20 is present in the first region A. FIG. do.

Next, the first protective film 40 covering the MISFET 20 in the first region is formed.

In this case, the first passivation layer 40 may be obtained through a first nitride thin film deposition process and a fourth photolithography process, whereby the MISFET 20 may be formed in the first region A of one surface of the silicon substrate 2 as shown in FIG. 5. ), A first protective film 40 that selectively covers only) is obtained.

Next, a III-V compound semiconductor layer 52 having a heterojunction structure is formed on the exposed Si cap layer 6 of the second region B on one surface of the silicon substrate 2 through a selective crystal growth process.

At this time, the III-V compound semiconductor layer 52 is, for example, moved to the semi-insulator GaAs layer 53 (see Fig. 6, hereinafter the same), the buffer layer 54, the 2D channel layer and the 2D channel layer. A mobile electron supply layer 55 for supplying electrons, an AlGaAs layer 56 having a high band gap to limit the mobile electrons only to the 2D channel layer, and a GaAs surface layer 57 doped with N-type impurities in this order As shown in FIG. 6, the III-V compound semiconductor layer 52 is completed in the second region B of the silicon substrate 2 as shown in FIG. 6.

Next, second source and drain regions 62 and 64 are formed on the III-V compound semiconductor layer 52.

To this end, after depositing a third metal thin film on one surface of the silicon substrate 2 including the III-V compound semiconductor layer 52, an ohmic junction layer is formed by a fifth photolithography process or a lift-off process, Low temperature annealing is performed to form second source and drain regions 62 and 64 by silicide.

This completes the III-V compound semiconductor layer 52 and the second source and drain regions 62 and 64, as shown in FIG.

Next, a gate recess is etched on the III-V compound semiconductor layer 52 to form a groove 59.

At this time, the gate recess etching may be a selective etching method according to the difference in the etching rate, the assumption that the etching rate of the GaAs surface layer 57 of the AlGaAs layer 56 and GaAs surface layer 57, Relatively fast, the etching up to AlGaAs layer 56 results in grooves 59 of undoped well structure (i.e. GaAs) confined by the doped barrier (i.e. AlGaAs).

Next, the second metal gate 66 is formed in the groove 59 of the III-V compound semiconductor layer 52.

In this case, the second metal gate 66 may be obtained through the fourth metal thin film deposition and the sixth photolithography process, thereby completing the III-V compound HEMT 50 shown in FIG. 8.

Next, a second passivation layer 70 covering the first passivation layer 40 of the first region A and the III-V compound HEMT 50 of the second region B is deposited on one surface of the silicon substrate 2. .

In this case, the second passivation layer 70 may be obtained by deposition of a second nitride film.

Next, the first metal gate 22, the source and drain regions 32 and 34 of the MISFET 20 are exposed through the first and second passivation layers 40 and 70 of the first region A. FIG. A second metal gate 66, a source, and a first through third contact hole C1, C2, C3, a second passivation layer 70 in the second region B, and a III-V compound HEMT 50. Fourth to sixth contact holes C4, C5, and C6 exposing the drain regions 62 and 64 are formed.

To this end, a seventh photolithography process may be performed.

Finally, a first gate and a source connected one-to-one to the first metal gate 22, the source and the drain regions 32 and 34 of the MISFET 20 through the first to third contact holes C1, C2, and C3. The drain electrodes 72, 74, and 76 are formed, and the second metal gate 66, the source and drain regions 62 of the HEMT 50 are formed through the fourth to sixth contact holes C4, C5, and C6. Second gate, source, and drain electrodes 82, 84, and 86 connected one-to-one to one-to-one are formed.

For this purpose, a fifth metal thin film deposition process and an eighth photolithography process are performed. As a result, the CMOS device according to the present invention as shown in FIG. 50) A CMOS device integrated in this batch production method is completed.

On the other hand, the above description is only an embodiment of the present invention, the technical idea of the present invention is not limited thereto. That is, various modifications are possible to satisfy the technical idea of the present invention, but all should be interpreted as falling within the scope of the present invention. The technical idea of the present invention can be clearly understood by those skilled in the art through the following claims. There will be.

1 is a cross-sectional view of a CMOS device according to the present invention.

2 is a cross-sectional view of the process according to the manufacturing process of the CMOS device according to the present invention.

<Name of the code for the main part of the drawing>

2: silicon substrate 4: Ge layer

6: Si cap layer 8: Gate insulating film

10: trench 20: MISFET

22: first gate electrode 26, 28 doped region

32,34: first source and drain regions

40: first protective film 50: HEMT

52: III-V compound semiconductor layer 62,64: second source and drain region

66: second gate electrode 70: second protective film

C1, C2, C3, C4, C5, C6: first to sixth contact holes

72,74,76: first gate, source, and drain electrodes

82,84,86: second gate, source, drain electrode

Claims (22)

A CMOS device comprising P-type and N-type FETs having metal gates and source and drain regions, A silicon substrate having first and second regions defined therein; A Ge layer covering one surface of the silicon substrate; A Si cap layer covering the Ge layer; A P-type MISFET including a gate insulating film covering the Si cap layer in the first region; A first passivation layer covering the MISFET and the first region; An N-type HEMT including a heterojunction III-V compound semiconductor layer covering the Si cap layer in the second region; A second passivation layer covering the first passivation layer, the HEMT, and the second region; A first gate, source, and drain electrode connected to the first metal gate, the source, and the drain region of the MISFET through the first and second passivation layers, respectively; And And a second gate, a source, and a drain electrode connected to the second metal gate, the source, and the drain region of the HEMT, respectively, through the second passivation layer. The method according to claim 1, The silicon substrate is a Si wafer, the gate insulating film is a dielectric constant of 7.0 or more, and the first and second protective film is a nitride film. The method according to claim 1, And a trench formed on one surface of the Si cap layer, the Ge layer, and the silicon substrate to insulate the first and second regions. A method of manufacturing a CMOS device comprising a P-type and an N-type FET having a metal gate and a source and drain region, (a) crystal growth of a Ge layer and a Si cap layer in order on one surface of the silicon substrate; (b) dividing the silicon substrate into electrically insulated first and second regions; (c) depositing a gate insulating film on the Si cap layer in the first region and forming a P-type MISFET including a first metal gate, a source and a drain region; (d) forming a first passivation layer covering the MISFET and the first region; (e) selectively growing a heterojunction III-V compound semiconductor layer on the Si cap layer in the second region, and forming an N-type HEMT including a second metal gate, a source, and a drain region; And (f) stacking the first passivation layer, the second passivation layer covering the HEMT and the second region, and passing through the first and second passivation layers and connected to the first metal gate, the source, and the drain region of the MISFET, respectively. Forming a second gate, source, and drain electrode connected to the second metal gate, the source, and the drain region of the HEMT, respectively, through the first gate, the source, the drain electrode, and the second passivation layer. Manufacturing method. The method according to claim 4, In step (c), (c1) depositing a high-k dielectric film (high-k) having a dielectric constant of 7.0 or higher on the Si cap layer; (c2) depositing a first metal thin film on the high dielectric constant insulating film and obtaining the first metal gate by first photolithography; (c3) depositing and anisotropically etching an insulating film covering the first metal gate to obtain a sidewall at the edge of the first metal gate and the gate insulating film at the bottom of the first metal gate and the sidewall; (c4) exposing both edges of the sidewall with second photolithography, implanting P-type impurity ions, and annealing at a high temperature of 600 ° C. or higher to form a doped region; And and (c5) depositing a second metal thin film in said doped region and obtaining said first source and drain region with a third photolithography and a silicide of high temperature annealing at least 600 캜. The method according to claim 4, The step (d) includes depositing a nitride film to cover the MISFET and the first and second regions, and then obtaining the first protective film using fourth photolithography. The method according to claim 4, In step (e), (e1) selectively growing a semi-insulator layer, a buffer layer, a 2D channel layer, a mobile electron supply layer, a high band gap layer, and a surface layer doped with N-type impurities to the Si cap layer to obtain the III-V compound semiconductor layer; (e2) depositing a third metal thin film covering the III-V compound semiconductor layer, and obtaining the second source and drain regions by silicide by low temperature annealing at 350 ° C. after the fifth photolithography; (e3) gate recess etching the III-V compound semiconductor layer to form grooves; And (e4) depositing a fourth metal thin film covering said groove and obtaining said second metal gate with sixth photolithography. The method according to claim 4, Step (f), (f1) stacking a second passivation layer of the nitride layer covering the first passivation layer, the HEMT, and the second region; (f2) first through third contact holes through the first and second passivation layers through the seventh photolithography to expose the first metal gate, the source and the drain regions of the MISFET, and through the second passivation layer. Forming fourth to sixth contact holes exposing the second metal gate, the source and the drain regions of the HEMT, respectively; And and (f3) obtaining the first and second gate, source, and drain electrodes using a fifth metal thin film deposition and an eighth photolithography. delete delete delete delete delete delete delete delete delete delete delete delete delete delete

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