KR101001161B1 - Method of forming a pattern array of ferroelectric pvdf thin film by using a polymer binder - Google Patents
Method of forming a pattern array of ferroelectric pvdf thin film by using a polymer binder Download PDFInfo
- Publication number
- KR101001161B1 KR101001161B1 KR1020080105570A KR20080105570A KR101001161B1 KR 101001161 B1 KR101001161 B1 KR 101001161B1 KR 1020080105570 A KR1020080105570 A KR 1020080105570A KR 20080105570 A KR20080105570 A KR 20080105570A KR 101001161 B1 KR101001161 B1 KR 101001161B1
- Authority
- KR
- South Korea
- Prior art keywords
- pvdf
- polymer
- ether
- methyl
- thin film
- Prior art date
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- 229920002981 polyvinylidene fluoride Polymers 0.000 title claims abstract description 111
- 239000010409 thin film Substances 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims abstract description 48
- 229920005596 polymer binder Polymers 0.000 title claims abstract description 47
- 239000002491 polymer binding agent Substances 0.000 title claims abstract description 47
- 239000002033 PVDF binder Substances 0.000 claims abstract description 110
- 229920000642 polymer Polymers 0.000 claims abstract description 51
- 239000000203 mixture Substances 0.000 claims abstract description 20
- 238000003848 UV Light-Curing Methods 0.000 claims abstract description 19
- 239000002904 solvent Substances 0.000 claims abstract description 19
- 239000011248 coating agent Substances 0.000 claims abstract description 7
- 238000000576 coating method Methods 0.000 claims abstract description 7
- 230000001678 irradiating effect Effects 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 239000011230 binding agent Substances 0.000 claims abstract description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 24
- -1 ethyl ethoxy Chemical group 0.000 claims description 18
- 125000000524 functional group Chemical group 0.000 claims description 16
- 239000013078 crystal Substances 0.000 claims description 13
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 12
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 12
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 11
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 11
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 10
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 9
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical group CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims description 9
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims description 9
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 claims description 8
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 8
- 239000000178 monomer Substances 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- MIZLGWKEZAPEFJ-UHFFFAOYSA-N 1,1,2-trifluoroethene Chemical group FC=C(F)F MIZLGWKEZAPEFJ-UHFFFAOYSA-N 0.000 claims description 6
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 6
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 6
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 claims description 6
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 6
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 6
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 claims description 5
- 239000000654 additive Substances 0.000 claims description 5
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 claims description 5
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 claims description 4
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 4
- INQDDHNZXOAFFD-UHFFFAOYSA-N 2-[2-(2-prop-2-enoyloxyethoxy)ethoxy]ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOCCOC(=O)C=C INQDDHNZXOAFFD-UHFFFAOYSA-N 0.000 claims description 4
- UHFFVFAKEGKNAQ-UHFFFAOYSA-N 2-benzyl-2-(dimethylamino)-1-(4-morpholin-4-ylphenyl)butan-1-one Chemical group C=1C=C(N2CCOCC2)C=CC=1C(=O)C(CC)(N(C)C)CC1=CC=CC=C1 UHFFVFAKEGKNAQ-UHFFFAOYSA-N 0.000 claims description 4
- KUDUQBURMYMBIJ-UHFFFAOYSA-N 2-prop-2-enoyloxyethyl prop-2-enoate Chemical compound C=CC(=O)OCCOC(=O)C=C KUDUQBURMYMBIJ-UHFFFAOYSA-N 0.000 claims description 4
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 claims description 4
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 claims description 4
- 230000000996 additive effect Effects 0.000 claims description 4
- 150000001540 azides Chemical class 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 4
- 229920001577 copolymer Polymers 0.000 claims description 4
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 claims description 4
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 claims description 4
- FENFUOGYJVOCRY-UHFFFAOYSA-N 1-propoxypropan-2-ol Chemical compound CCCOCC(C)O FENFUOGYJVOCRY-UHFFFAOYSA-N 0.000 claims description 3
- SGQHDGJJZODGHE-UHFFFAOYSA-N 2-(2-hydroxyethoxy)ethanol;methyl acetate Chemical compound COC(C)=O.OCCOCCO SGQHDGJJZODGHE-UHFFFAOYSA-N 0.000 claims description 3
- GICQWELXXKHZIN-UHFFFAOYSA-N 2-[2-[(2-methylpropan-2-yl)oxy]ethoxy]ethanol Chemical compound CC(C)(C)OCCOCCO GICQWELXXKHZIN-UHFFFAOYSA-N 0.000 claims description 3
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims description 3
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 claims description 3
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 claims description 3
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 claims description 3
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 claims description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 3
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 claims description 3
- 239000012965 benzophenone Substances 0.000 claims description 3
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 3
- HOKNTYWEKQQKGV-UHFFFAOYSA-N disulfonylmethane Chemical compound O=S(=O)=C=S(=O)=O HOKNTYWEKQQKGV-UHFFFAOYSA-N 0.000 claims description 3
- DBLVXHJTZIDGHE-UHFFFAOYSA-N ethyl acetate;2-(2-hydroxyethoxy)ethanol Chemical compound CCOC(C)=O.OCCOCCO DBLVXHJTZIDGHE-UHFFFAOYSA-N 0.000 claims description 3
- 229940116333 ethyl lactate Drugs 0.000 claims description 3
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims description 3
- 229960004592 isopropanol Drugs 0.000 claims description 3
- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical compound COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 claims description 3
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 claims description 3
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 3
- 239000008096 xylene Substances 0.000 claims description 3
- QNODIIQQMGDSEF-UHFFFAOYSA-N (1-hydroxycyclohexyl)-phenylmethanone Chemical compound C=1C=CC=CC=1C(=O)C1(O)CCCCC1 QNODIIQQMGDSEF-UHFFFAOYSA-N 0.000 claims description 2
- PCLLJCFJFOBGDE-UHFFFAOYSA-N (5-bromo-2-chlorophenyl)methanamine Chemical compound NCC1=CC(Br)=CC=C1Cl PCLLJCFJFOBGDE-UHFFFAOYSA-N 0.000 claims description 2
- ZXMGHDIOOHOAAE-UHFFFAOYSA-N 1,1,1-trifluoro-n-(trifluoromethylsulfonyl)methanesulfonamide Chemical compound FC(F)(F)S(=O)(=O)NS(=O)(=O)C(F)(F)F ZXMGHDIOOHOAAE-UHFFFAOYSA-N 0.000 claims description 2
- WEERVPDNCOGWJF-UHFFFAOYSA-N 1,4-bis(ethenyl)benzene Chemical compound C=CC1=CC=C(C=C)C=C1 WEERVPDNCOGWJF-UHFFFAOYSA-N 0.000 claims description 2
- JQKOWSFGWIKBDS-UHFFFAOYSA-N 1,5-bis(ethenyl)naphthalene Chemical compound C1=CC=C2C(C=C)=CC=CC2=C1C=C JQKOWSFGWIKBDS-UHFFFAOYSA-N 0.000 claims description 2
- IYDQUNGWLDBKOF-UHFFFAOYSA-N 1-(4-butylphenyl)-2,2,2-trichloroethanone Chemical compound CCCCC1=CC=C(C(=O)C(Cl)(Cl)Cl)C=C1 IYDQUNGWLDBKOF-UHFFFAOYSA-N 0.000 claims description 2
- ZDQNWDNMNKSMHI-UHFFFAOYSA-N 1-[2-(2-prop-2-enoyloxypropoxy)propoxy]propan-2-yl prop-2-enoate Chemical compound C=CC(=O)OC(C)COC(C)COCC(C)OC(=O)C=C ZDQNWDNMNKSMHI-UHFFFAOYSA-N 0.000 claims description 2
- CHVNGPFOOJHLLJ-UHFFFAOYSA-N 1-chloro-4-hydroxythioxanthen-9-one Chemical compound S1C2=CC=CC=C2C(=O)C2=C1C(O)=CC=C2Cl CHVNGPFOOJHLLJ-UHFFFAOYSA-N 0.000 claims description 2
- HSKPJQYAHCKJQC-UHFFFAOYSA-N 1-ethylanthracene-9,10-dione Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2CC HSKPJQYAHCKJQC-UHFFFAOYSA-N 0.000 claims description 2
- YIKSHDNOAYSSPX-UHFFFAOYSA-N 1-propan-2-ylthioxanthen-9-one Chemical compound S1C2=CC=CC=C2C(=O)C2=C1C=CC=C2C(C)C YIKSHDNOAYSSPX-UHFFFAOYSA-N 0.000 claims description 2
- JHGGYGMFCRSWIZ-UHFFFAOYSA-N 2,2-dichloro-1-(4-phenoxyphenyl)ethanone Chemical compound C1=CC(C(=O)C(Cl)Cl)=CC=C1OC1=CC=CC=C1 JHGGYGMFCRSWIZ-UHFFFAOYSA-N 0.000 claims description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 2
- CUDYYMUUJHLCGZ-UHFFFAOYSA-N 2-(2-methoxypropoxy)propan-1-ol Chemical compound COC(C)COC(C)CO CUDYYMUUJHLCGZ-UHFFFAOYSA-N 0.000 claims description 2
- DZZAHLOABNWIFA-UHFFFAOYSA-N 2-butoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OCCCC)C(=O)C1=CC=CC=C1 DZZAHLOABNWIFA-UHFFFAOYSA-N 0.000 claims description 2
- XMLYCEVDHLAQEL-UHFFFAOYSA-N 2-hydroxy-2-methyl-1-phenylpropan-1-one Chemical compound CC(C)(O)C(=O)C1=CC=CC=C1 XMLYCEVDHLAQEL-UHFFFAOYSA-N 0.000 claims description 2
- LETDRANQSOEVCX-UHFFFAOYSA-N 2-methyl-4,6-bis(trichloromethyl)-1,3,5-triazine Chemical compound CC1=NC(C(Cl)(Cl)Cl)=NC(C(Cl)(Cl)Cl)=N1 LETDRANQSOEVCX-UHFFFAOYSA-N 0.000 claims description 2
- HDDGHHVNVQKFIB-UHFFFAOYSA-N 2-naphthalen-2-yl-4,6-bis(trichloromethyl)-1,3,5-triazine Chemical compound ClC(Cl)(Cl)C1=NC(C(Cl)(Cl)Cl)=NC(C=2C=C3C=CC=CC3=CC=2)=N1 HDDGHHVNVQKFIB-UHFFFAOYSA-N 0.000 claims description 2
- FQMIAEWUVYWVNB-UHFFFAOYSA-N 3-prop-2-enoyloxybutyl prop-2-enoate Chemical compound C=CC(=O)OC(C)CCOC(=O)C=C FQMIAEWUVYWVNB-UHFFFAOYSA-N 0.000 claims description 2
- GFLJTEHFZZNCTR-UHFFFAOYSA-N 3-prop-2-enoyloxypropyl prop-2-enoate Chemical compound C=CC(=O)OCCCOC(=O)C=C GFLJTEHFZZNCTR-UHFFFAOYSA-N 0.000 claims description 2
- JHWGFJBTMHEZME-UHFFFAOYSA-N 4-prop-2-enoyloxybutyl prop-2-enoate Chemical compound C=CC(=O)OCCCCOC(=O)C=C JHWGFJBTMHEZME-UHFFFAOYSA-N 0.000 claims description 2
- XAMCLRBWHRRBCN-UHFFFAOYSA-N 5-prop-2-enoyloxypentyl prop-2-enoate Chemical compound C=CC(=O)OCCCCCOC(=O)C=C XAMCLRBWHRRBCN-UHFFFAOYSA-N 0.000 claims description 2
- SAPGBCWOQLHKKZ-UHFFFAOYSA-N 6-(2-methylprop-2-enoyloxy)hexyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCCCCCOC(=O)C(C)=C SAPGBCWOQLHKKZ-UHFFFAOYSA-N 0.000 claims description 2
- FIHBHSQYSYVZQE-UHFFFAOYSA-N 6-prop-2-enoyloxyhexyl prop-2-enoate Chemical compound C=CC(=O)OCCCCCCOC(=O)C=C FIHBHSQYSYVZQE-UHFFFAOYSA-N 0.000 claims description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims description 2
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 claims description 2
- 239000005062 Polybutadiene Substances 0.000 claims description 2
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 claims description 2
- ULQMPOIOSDXIGC-UHFFFAOYSA-N [2,2-dimethyl-3-(2-methylprop-2-enoyloxy)propyl] 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(C)(C)COC(=O)C(C)=C ULQMPOIOSDXIGC-UHFFFAOYSA-N 0.000 claims description 2
- NKIDFMYWMSBSRA-UHFFFAOYSA-N [4-(2-methylprop-2-enoyloxymethyl)cyclohexyl]methyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC1CCC(COC(=O)C(C)=C)CC1 NKIDFMYWMSBSRA-UHFFFAOYSA-N 0.000 claims description 2
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 claims description 2
- QUZSUMLPWDHKCJ-UHFFFAOYSA-N bisphenol A dimethacrylate Chemical compound C1=CC(OC(=O)C(=C)C)=CC=C1C(C)(C)C1=CC=C(OC(=O)C(C)=C)C=C1 QUZSUMLPWDHKCJ-UHFFFAOYSA-N 0.000 claims description 2
- FFSAXUULYPJSKH-UHFFFAOYSA-N butyrophenone Chemical compound CCCC(=O)C1=CC=CC=C1 FFSAXUULYPJSKH-UHFFFAOYSA-N 0.000 claims description 2
- 239000012954 diazonium Substances 0.000 claims description 2
- 150000001989 diazonium salts Chemical class 0.000 claims description 2
- OZLBDYMWFAHSOQ-UHFFFAOYSA-N diphenyliodanium Chemical compound C=1C=CC=CC=1[I+]C1=CC=CC=C1 OZLBDYMWFAHSOQ-UHFFFAOYSA-N 0.000 claims description 2
- ORPDKMPYOLFUBA-UHFFFAOYSA-M diphenyliodanium;1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate Chemical compound C=1C=CC=CC=1[I+]C1=CC=CC=C1.[O-]S(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F ORPDKMPYOLFUBA-UHFFFAOYSA-M 0.000 claims description 2
- SBQIJPBUMNWUKN-UHFFFAOYSA-M diphenyliodanium;trifluoromethanesulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C=1C=CC=CC=1[I+]C1=CC=CC=C1 SBQIJPBUMNWUKN-UHFFFAOYSA-M 0.000 claims description 2
- MYRTYDVEIRVNKP-UHFFFAOYSA-N divinylbenzene Substances C=CC1=CC=CC=C1C=C MYRTYDVEIRVNKP-UHFFFAOYSA-N 0.000 claims description 2
- 125000003700 epoxy group Chemical group 0.000 claims description 2
- BLCTWBJQROOONQ-UHFFFAOYSA-N ethenyl prop-2-enoate Chemical compound C=COC(=O)C=C BLCTWBJQROOONQ-UHFFFAOYSA-N 0.000 claims description 2
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical compound OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 claims description 2
- 229920001519 homopolymer Polymers 0.000 claims description 2
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical class I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims description 2
- YDKNBNOOCSNPNS-UHFFFAOYSA-N methyl 1,3-benzoxazole-2-carboxylate Chemical compound C1=CC=C2OC(C(=O)OC)=NC2=C1 YDKNBNOOCSNPNS-UHFFFAOYSA-N 0.000 claims description 2
- YLHXLHGIAMFFBU-UHFFFAOYSA-N methyl phenylglyoxalate Chemical compound COC(=O)C(=O)C1=CC=CC=C1 YLHXLHGIAMFFBU-UHFFFAOYSA-N 0.000 claims description 2
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical compound C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 claims description 2
- FSDNTQSJGHSJBG-UHFFFAOYSA-N piperidine-4-carbonitrile Chemical compound N#CC1CCNCC1 FSDNTQSJGHSJBG-UHFFFAOYSA-N 0.000 claims description 2
- 229920002857 polybutadiene Polymers 0.000 claims description 2
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 claims description 2
- FAYMLNNRGCYLSR-UHFFFAOYSA-M triphenylsulfonium triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 FAYMLNNRGCYLSR-UHFFFAOYSA-M 0.000 claims description 2
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims 6
- LEJBBGNFPAFPKQ-UHFFFAOYSA-N 2-(2-prop-2-enoyloxyethoxy)ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOC(=O)C=C LEJBBGNFPAFPKQ-UHFFFAOYSA-N 0.000 claims 2
- GJZFGDYLJLCGHT-UHFFFAOYSA-N 1,2-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=C(CC)C(CC)=CC=C3SC2=C1 GJZFGDYLJLCGHT-UHFFFAOYSA-N 0.000 claims 1
- HWSSEYVMGDIFMH-UHFFFAOYSA-N 2-[2-[2-(2-methylprop-2-enoyloxy)ethoxy]ethoxy]ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOCCOCCOC(=O)C(C)=C HWSSEYVMGDIFMH-UHFFFAOYSA-N 0.000 claims 1
- FHLPGTXWCFQMIU-UHFFFAOYSA-N [4-[2-(4-prop-2-enoyloxyphenyl)propan-2-yl]phenyl] prop-2-enoate Chemical compound C=1C=C(OC(=O)C=C)C=CC=1C(C)(C)C1=CC=C(OC(=O)C=C)C=C1 FHLPGTXWCFQMIU-UHFFFAOYSA-N 0.000 claims 1
- 238000000137 annealing Methods 0.000 claims 1
- QQMDRLCGLUDTOX-UHFFFAOYSA-N bis(trifluoromethylsulfonyl)methylsulfonyl-trifluoromethane;triphenylsulfanium Chemical compound C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1.FC(F)(F)S(=O)(=O)C(S(=O)(=O)C(F)(F)F)S(=O)(=O)C(F)(F)F QQMDRLCGLUDTOX-UHFFFAOYSA-N 0.000 claims 1
- CSYSRRCOBYEGPI-UHFFFAOYSA-N diazo(sulfonyl)methane Chemical compound [N-]=[N+]=C=S(=O)=O CSYSRRCOBYEGPI-UHFFFAOYSA-N 0.000 claims 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 claims 1
- ZZYWJHRTYPNMRO-UHFFFAOYSA-N ethane-1,2-diol;4-(2-methylprop-2-enoyloxy)butyl 2-methylprop-2-enoate Chemical compound OCCO.CC(=C)C(=O)OCCCCOC(=O)C(C)=C ZZYWJHRTYPNMRO-UHFFFAOYSA-N 0.000 claims 1
- 125000003944 tolyl group Chemical group 0.000 claims 1
- 230000005621 ferroelectricity Effects 0.000 description 6
- 238000000059 patterning Methods 0.000 description 4
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/702—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof
- H01L21/707—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof of thin-film circuits or parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40111—Multistep manufacturing processes for data storage electrodes the electrodes comprising a layer which is used for its ferroelectric properties
Abstract
본 발명은 고분자 바인더를 이용하여 강유전성 PVDF(polyvinylidene fluoride) 박막의 패턴 어레이(pattern array)를 형성하는 방법에 관한 것으로, 구체적으로 1) PVDF 고분자, 및 이와 상용성이 우수하면서 UV 경화가 가능한 고분자 바인더를 용매에 용해시킨 후 그 혼합물을 기판 위에 코팅하여 PVDF 박막을 형성하는 단계; 및 2) 상기 코팅된 박막 위에 패턴화된 마스크를 통해 UV를 조사하여 조사된 부분에서만 UV 경화를 유도한 후, UV가 조사되지 않아 경화되지 않은 부분은 용매를 이용하여 제거하여 패턴 어레이를 형성하는 단계를 포함하는, 고분자 바인더를 이용하여 강유전성 PVDF 박막의 패턴 어레이를 형성하는 방법에 관한 것이다.The present invention relates to a method of forming a pattern array of a ferroelectric polyvinylidene fluoride (PVDF) thin film using a polymer binder. Specifically, 1) PVDF polymer, and a polymer binder capable of UV curing with excellent compatibility with the PVDF polymer. Dissolving in a solvent and coating the mixture on a substrate to form a PVDF thin film; And 2) irradiating UV through the patterned mask on the coated thin film to induce UV curing only in the irradiated portion, and then removing the uncured portion by using a solvent to form a pattern array. A method of forming a patterned array of ferroelectric PVDF thin films using a polymeric binder, comprising the steps of:
PVDF, 강유전성 박막, 패턴 어레이, 경화성 고분자 바인더 PVDF, Ferroelectric Thin Film, Pattern Array, Curable Polymer Binder
Description
본 발명은 PVDF 고분자와 상용성이 우수하고 UV 경화가 가능한 고분자 바인더를 이용하여 강유전성 PVDF 박막의 패턴 어레이를 정교하면서도 대량으로 형성할 수 있는 방법에 관한 것이다.The present invention relates to a method capable of precisely and mass forming a pattern array of a ferroelectric PVDF thin film using a polymer binder having excellent compatibility with a PVDF polymer and capable of UV curing.
폴리(비닐리덴 플루오라이드)(polyvinylidene fluoride, 이하 "PVDF"로 약칭함) 또는 PVDF와 트라이플루오로에틸렌(trifluoroethylene, TrFE)의 공중합체인 P(VDF-TrFE)와 같은 강유전성(ferroelectric) 고분자들은 고분자 특유의 우수한 가공성과 제조비용이 저렴하여 최근에 다양한 분야에서의 응용이 시도되고 있다. 예를 들면, PVDF 고유의 강유전성 특성을 활용하여 정보 저장장치로서 비휘발성 메모리(non-volatile memory) 분야에의 응용(대한민국 특허 공개 제2007-76698호), 압전특성(piezoelectric)을 활용하여 압전 발전소자(energy harvesting device) 분야에의 응용(Rome 등, Science 309: 1725-1728, 2005), 촉각센서(tactile sensor) 분야에의 응용(미국 특허 제5,760,530호) 등에 대해서 연구가 활발히 진행되고 있다. Ferroelectric polymers such as polyvinylidene fluoride (hereinafter abbreviated as "PVDF") or P (VDF-TrFE), a copolymer of PVDF and trifluoroethylene (TrFE), are polymer specific. Due to its excellent processability and low manufacturing cost, applications have recently been attempted in various fields. For example, the application to non-volatile memory field (Korean Patent Publication No. 2007-76698) and piezoelectric power generation using piezoelectricity as an information storage device utilizing the inherent ferroelectric properties of PVDF. Research in the field of energy harvesting device (Rome et al., Science 309: 1725-1728, 2005), application in the field of tactile sensor (US Patent No. 5,760, 530) and the like are actively being researched.
PVDF 고분자는 수소와 불소 원자사이에 쌍극자(dipole)가 형성되고 결정화 구조에 따라 그의 강유전성 특성에 큰 차이를 보이는데, 열역학적으로 가장 안정한 TGTG(Trans-Gauche-Trans-Gauche) 구조를 가지는 α-결정구조는 강유전성을 나타내지 않는 반면, TTTT 구조를 가지는 β-결정구조는 가장 우수한 강유전성을 나타내고, TTTG 구조를 가지는 γ-결정구조는 β-결정구조보다 약한 강유전성을 나타낸다. P(VDF-TrFE) 공중합체는 항상 β-결정구조를 가져 강유전성이 우수한 특성이 있으나 제조비용이 고가인 단점이 있다. 이러한 단점을 극복하기 위하여, 열처리 온도(Horibe 등, J. Electrochem. Soc. 153: G119-G124, 2006), 압력(Scheinbeim 등, J. Appl. Phys. 50: 4399, 1979) 등과 같은 공정 조건의 변화를 통해 PVDF의 결정구조를 조절하여 강유전성을 유도하고자 하는 연구들이 진행되고 있다. PVDF polymer has a dipole formed between hydrogen and fluorine atoms and shows a big difference in its ferroelectric properties depending on the crystallization structure.The α-crystal structure has the most stable TGTG (Trans-Gauche-Trans-Gauche) structure. Does not exhibit ferroelectricity, while the β-crystal structure with TTTT structure shows the best ferroelectricity, and the γ-crystal structure with TTTG structure shows weak ferroelectricity than β-crystal structure. P (VDF-TrFE) copolymers always have a β-crystal structure and have excellent ferroelectric properties, but have a disadvantage in that manufacturing cost is high. In order to overcome this disadvantage, process conditions such as heat treatment temperature (Horibe et al . , J. Electrochem. Soc. 153: G119-G124, 2006), pressure (Scheinbeim et al. , J. Appl. Phys. 50: 4399, 1979) Research is underway to induce ferroelectricity by controlling the crystal structure of PVDF through change.
또한 PVDF는 50 MV/m 이상의 매우 높은 전기장을 인가해야만 쌍안정성(bistability)을 나타내는 특징이 있어, 실제 산업적인 응용을 위해서는 이러한 인가전압을 낮추기 위해 박막화가 선행되어야 하는 문제점을 가지고 있다.In addition, PVDF is characterized by showing bistable stability only when a very high electric field of 50 MV / m or more is applied, and has a problem that thinning is required to lower such applied voltage for practical industrial applications.
뿐만 아니라, PVDF 고분자를 고집적화 디바이스에 응용하기 위해서는 강유전성 PVDF 박막의 패턴 어레이를 형성하는 방법이 요구된다. 그러나 PVDF 고분자는 고유의 화학적 안정성으로 인해 화학적 개질이 매우 어려워 패턴화가 쉽지 않다. 최근에 임프린트 방법과 같은 물리적 압력을 가하여 PVDF 박막의 패턴 어레이를 형성하는 방법(대한민국 특허 공개 제2008-13053호)이 제시되었으나, 이 방법에 의해 제조되는 패턴 어레이는 γ-결정구조를 가지는 한계를 보인다.In addition, in order to apply PVDF polymer to high integration devices, a method of forming a pattern array of ferroelectric PVDF thin films is required. However, PVDF polymers are difficult to pattern because of their inherent chemical stability, which makes chemical modification very difficult. Recently, a method of forming a pattern array of PVDF thin films by applying physical pressure such as an imprint method has been proposed (Korean Patent Publication No. 2008-13053), but the pattern array manufactured by this method has a limitation of having a γ-crystal structure. see.
이에 본 발명자들은 화학적 안정성이 우수하여 화학적 개질이 어려운 PVDF 고분자의 특성상 임프린트 방법과 같은 물리적 패턴화만이 가능했던 종래 기술의 문제점을 해결하고자 예의 연구 노력한 결과, PVDF 고분자와 상용성이 있고 UV 경화가 가능한 고분자 바인더를 사용하면 강유전성 PVDF 박막의 패턴 어레이를 정교하면서도 대량으로 형성할 수 있음을 확인함으로써 본 발명을 완성하였다.Accordingly, the present inventors have diligently researched to solve the problems of the prior art in which only the physical patterning such as the imprinting method was possible due to the characteristics of the PVDF polymer which is difficult to chemically modify due to its excellent chemical stability. The present invention was completed by confirming that the use of a polymer binder can form a pattern array of ferroelectric PVDF thin films in a sophisticated and large amount.
따라서 본 발명의 목적은 고집적 디바이스에의 응용을 가능케 하기 위하여 비물리적인 기술로 강유전성 PVDF 박막의 패턴 어레이를 정교하면서도 대량으로 형성할 수 있는 방법을 제공하는 것이다. It is therefore an object of the present invention to provide a method capable of forming a sophisticated and large volume of patterned arrays of ferroelectric PVDF thin films by non-physical techniques to enable their application in highly integrated devices.
상기 목적을 달성하기 위하여, 본 발명은 PVDF 고분자와 상용성이 우수하고 UV 경화가 가능한 고분자 바인더를 이용하여 강유전성 PVDF 박막의 패턴 어레이를 형성하는 방법을 제공한다.In order to achieve the above object, the present invention provides a method of forming a pattern array of ferroelectric PVDF thin film using a polymer binder excellent in compatibility with the PVDF polymer and capable of UV curing.
본 발명에 따른 강유전성 PVDF 박막의 패턴 어레이 형성방법은, 화학적 안정성이 우수하여 화학개질이 어려운 PVDF 고분자의 특성상 임프린트 방법과 같은 물리적 패턴화만이 가능하였고, 그로 인해 정교한 패턴화 및 대량 패턴화가 불가능했던 PVDF 박막의 패턴 어레이 형성에 있어서의 문제점을 극복한 발명으로, PVDF 고분자와의 상용성이 우수하고 UV 경화가 가능한 고분자 바인더를 사용하여 PVDF 고분자의 결정구조와 상관없이 강유전성 PVDF 패턴 어레이를 정교하고 대량으로 형성할 수 있어 고집적 디바이스에의 응용에 매우 유용하게 적용될 수 있다.In the method of forming a patterned array of ferroelectric PVDF thin films according to the present invention, PVDF polymers have excellent chemical stability and are difficult to chemically modify. The invention overcomes the problems in forming a pattern array of thin films. The high-compatibility of PVDF polymers and the use of a UV-curable polymer binder make fine and bulk ferroelectric PVDF pattern arrays irrespective of the crystal structure of PVDF polymers. It can be formed to be very useful for applications in high-density devices.
본 발명은 고분자 바인더를 이용하여 강유전성 PVDF 박막의 패턴 어레이를 형성하는 방법에 관한 것이다.The present invention relates to a method of forming a patterned array of ferroelectric PVDF thin films using a polymer binder.
구체적으로, 본 발명에 따른 강유전성 PVDF 박막의 패턴 어레이 형성방법은,Specifically, the method of forming a pattern array of the ferroelectric PVDF thin film according to the present invention,
1) PVDF 고분자, 및 이와 상용성이 우수하면서 UV 경화가 가능한 고분자 바인더를 용매에 용해시킨 후 그 혼합물을 기판 위에 코팅하여 PVDF 박막을 형성하는 단계; 및1) dissolving a PVDF polymer, and a polymer binder having excellent compatibility with the UV curable polymer in a solvent and coating the mixture on a substrate to form a PVDF thin film; And
2) 상기 코팅된 박막 위에 패턴화된 마스크를 통해 UV를 조사하여 조사된 부분에서만 UV 경화를 유도한 후, UV가 조사되지 않아 경화되지 않은 부분은 용매를 이용하여 제거하여 패턴 어레이를 형성하는 단계를 포함한다.2) irradiating UV through the patterned mask on the coated thin film to induce UV curing only in the irradiated portion, and then remove the uncured portion using a solvent to form a pattern array by irradiating UV. It includes.
본 발명에 따른 강유전성 PVDF 박막의 패턴 어레이 형성방법은 종래의 미세임프린팅(microimprinting)과 같은 물리적 패턴화 기술의 문제점을 극복한 발명으로, PVDF와의 상용성이 우수하면서 UV 경화가 가능한 고분자 바인더를 사용하는 것을 특징으로 한다.The method of forming a patterned array of ferroelectric PVDF thin film according to the present invention overcomes the problems of conventional physical patterning techniques such as microimprinting, and uses a polymer binder capable of UV curing while having excellent compatibility with PVDF. Characterized in that.
이하 본 발명에 따른 강유전성 PVDF 박막의 패턴 어레이 형성방법을 단계별로 상세히 설명한다.Hereinafter, a method of forming a pattern array of the ferroelectric PVDF thin film according to the present invention will be described in detail step by step.
단계 1)은 PVDF 고분자, 및 이와 상용성이 우수하면서 UV 경화가 가능한 고분자 바인더를 용매에 용해시킨 후 그 혼합물을 기판 위에 코팅하여 PVDF 박막을 형성하는 단계로, 상기 PVDF 고분자와 상기 고분자 100 중량부에 대해 고분자 바인더 1 내지 700 중량부를 용매 300 내지 20,000 중량부에 용해시켜 PVDF/고분자 바인더 혼합물을 제조한 후 이를 기판 위에 코팅하여 PVDF 박막을 형성한다. Step 1) is a step of dissolving a PVDF polymer, and a polymer binder having excellent compatibility with UV curing in a solvent and coating the mixture on a substrate to form a PVDF thin film, the PVDF polymer and 100 parts by weight of the polymer 1 to 700 parts by weight of the polymer binder is dissolved in 300 to 20,000 parts by weight of a solvent to prepare a PVDF / polymer binder mixture, which is then coated on a substrate to form a PVDF thin film.
단계 1)에서 PVDF 고분자는 PVDF 단일 중합체 또는 PVDF와 트라이플루오로에틸렌(trifluoroethylene, TrFE)의 공중합체인 P(VDF-TrFE)와 같이 강유전성을 가지 는 PVDF계 고분자를 포함한다. In step 1), the PVDF polymer includes a PVDF homopolymer or a ferroelectric PVDF polymer such as P (VDF-TrFE) which is a copolymer of PVDF and trifluoroethylene (TrFE).
단계 1)에서 고분자 바인더는 이러한 강유전성 PVDF 고분자와의 상용성이 우수하고 UV 경화가 가능한 고분자라면 그 종류를 한정하지 않고 모두 사용가능하며, 점도 조절이 용이하여 코팅하기 쉬운 것이 바람직하다. 본 발명에서 고분자 바인더가 강유전성 PVDF 고분자와의 "상용성이 우수하다"는 것은 코팅 후에 PVDF 고분자와 상분리가 일어나지 않거나 상분리가 일어나더라도 상분리 도메인이 100 ㎚ 이하인 경우를 의미하는 것이다.In step 1), the polymer binder is a polymer having excellent compatibility with the ferroelectric PVDF polymer and capable of UV curing, and can be used without limiting the type thereof. In the present invention, "excellent" compatibility with the ferroelectric PVDF polymer means that the polymer binder has no phase separation with the PVDF polymer after coating or even if the phase separation domain is 100 nm or less.
본 발명에 적합한 고분자 바인더는 PVDF와 상용성이 우수한 폴리메틸메타크릴레이트(polymethylmethacrylate, PMMA) 고분자를 주쇄 또는 측쇄에 50 내지 99.9%의 몰비로 포함하고 UV 경화가 가능한 작용기를 포함하는 PMMA계 고분자이다. 이러한 고분자 바인더의 대표적인 예시는 하기 화학식 1로 표시되는 고분자이다. The polymer binder suitable for the present invention is a PMMA-based polymer containing polymethylmethacrylate (PMMA) polymer having excellent compatibility with PVDF in a molar ratio of 50 to 99.9% in the main chain or the side chain and including a functional group capable of UV curing. . Representative examples of such a polymer binder is a polymer represented by the following formula (1).
상기 식에서, Me는 CH3이고, Y는 UV 경화가 가능한 작용기이고, x는 0.5 내지 0.999 사이를 의미한다.Wherein Me is CH 3 , Y is a UV curable functional group, and x means between 0.5 and 0.999.
상기한 고분자 바인더에서 UV 경화가 가능한 작용기에는 불포화 이중결 합(C=C), 아자이드(-N3) 작용기, 에폭사이드 작용기, 글리시딜 작용기 등이 포함된다.UV-curable functional groups in the polymer binder include unsaturated double bond (C = C), azide (-N 3 ) functional group, epoxide functional group, glycidyl functional group and the like.
하기 화학식 2의 고분자 바인더는 PMMA 주쇄에 UV 경화가 가능한 작용기로 불포화 이중결합을 포함하는 고분자이다. The polymer binder of Formula 2 is a polymer containing an unsaturated double bond as a functional group capable of UV curing on the PMMA backbone.
상기 식에서, Me는 CH3이고, x는 0.5 내지 0.999 사이를 의미한다.Wherein Me is CH 3 and x means between 0.5 and 0.999.
하기 화학식 3의 고분자 바인더는 PMMA 주쇄에 UV 경화가 가능한 작용기로 아자이드(-N3) 작용기를 포함하는 고분자이다.The polymer binder of Formula 3 is a polymer including an azide (-N 3 ) functional group as a functional group capable of UV curing on the PMMA backbone.
상기 식에서, Me는 CH3이고, x는 0.5 내지 0.999 사이를 의미한다.Wherein Me is CH 3 and x means between 0.5 and 0.999.
하기 화학식 3의 고분자 바인더는 PMMA 주쇄에 UV 경화가 가능한 작용기로 글리시딜 작용기를 포함하는 고분자이다. The polymer binder of Chemical Formula 3 is a polymer including glycidyl functional group as a functional group capable of UV curing on the PMMA backbone.
상기 식에서, Me는 CH3이고, x는 0.5 내지 0.999 사이를 의미한다.Wherein Me is CH 3 and x means between 0.5 and 0.999.
상기한 PVDF 고분자와 고분자 바인더를 적합한 용매에 첨가하고 용해시켜 박막 형성을 위한 PVDF/고분자 바인더 혼합물을 제조한다. 이때 최종 혼합물의 점도 를 10 내지 50,000 cps 범위가 되도록 용매를 첨가하는 것이 바람직하다. 더욱 바람직하게는 점도를 200 내지 5,000 cps가 되도록 조절하는 것이 코팅 후 박막의 핀홀(pin hole)이 없고 박막의 두께를 조절하는데 보다 유리하다. 이러한 용매로는 PVDF 고분자, 바인더 수지 및/또는 기타 첨가제 화합물과의 상용성을 고려할 때 에틸아세테이트, 부틸아세테이트, 다이에틸렌글리콜다이메틸에테르, 다이에틸렌글리콜다이메틸에틸에테르, 메틸메톡시프로피오네이트, 에틸에톡시프로피오네이트(EEP), 에틸락테이트, 프로필렌글리콜메틸에테르아세테이트(PGMEA), 프로필렌글리콜메틸에테르, 프로필렌글리콜프로필에테르, 메틸셀로솔브아세테이트, 에틸셀로솔브아세테이트, 다이에틸렌글리콜메틸아세테이트, 다이에틸렌글리콜에틸아세테이트, 아세톤, 메틸아이소부틸케톤, 사이클로헥사논, 다이메틸포름아마이드(DMF), N,N-다이메틸아세트아마이드(DMAc), N-메틸-2-피롤리돈(NMP), γ-부티로락톤, 다이에틸에테르, 에틸렌글리콜다이메틸에테르, 다이글라임(Diglyme), 테트라하이드로퓨란(THF), 메탄올, 에탄올, 프로판올, 아이소-프로판올, 메틸셀로솔브, 에틸셀로솔브, 다이에틸렌글리콜메틸에테르, 다이에틸렌글리콜에틸에테르, 다이프로필렌글리콜메틸에테르, 톨루엔, 크실렌, 헥산, 헵탄 및 옥탄 중에서 선택된 용매를 단독으로 또는 1종 이상을 혼합하여 사용할 수 있다.The above-described PVDF polymer and polymer binder are added to a suitable solvent and dissolved to prepare a PVDF / polymer binder mixture for thin film formation. At this time, it is preferable to add a solvent so that the viscosity of the final mixture is in the range of 10 to 50,000 cps. More preferably, adjusting the viscosity to be 200 to 5,000 cps is more advantageous for controlling the thickness of the thin film without the pin hole of the thin film after coating. Such solvents include ethyl acetate, butyl acetate, diethylene glycol dimethyl ether, diethylene glycol dimethylethyl ether, methyl methoxy propionate, in consideration of compatibility with PVDF polymers, binder resins and / or other additive compounds. Ethyl ethoxy propionate (EEP), ethyl lactate, propylene glycol methyl ether acetate (PGMEA), propylene glycol methyl ether, propylene glycol propyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol methyl acetate , Diethylene glycol ethyl acetate, acetone, methyl isobutyl ketone, cyclohexanone, dimethylformamide (DMF), N, N-dimethylacetamide (DMAc), N-methyl-2-pyrrolidone (NMP) , γ-butyrolactone, diethyl ether, ethylene glycol dimethyl ether, diglyme, tetrahydrofuran (THF), Solvent selected from allol, ethanol, propanol, iso-propanol, methyl cellosolve, ethyl cellosolve, diethylene glycol methyl ether, diethylene glycol ethyl ether, dipropylene glycol methyl ether, toluene, xylene, hexane, heptane and octane It can be used individually or in mixture of 1 or more types.
이와 같이 제조된 PVDF/고분자 바인더 혼합물을 이용하여 기판 위에 강유전성 PVDF 박막을 형성하는 방법으로는 열증착법(thermal evaporation method)을 포함하는 진공 증착법, 스핀 코팅(spin coating), 롤 코팅(roll coating), 분무 코팅(spray coating), 프린팅(printing) 등을 예로 들 수 있으나, 이에 한정되지는 않는다. 본 발명의 바람직한 실시형태에서는, 스핀 코팅으로 PVDF/고분자 바인더 혼합물을 기판 위에 도포하여 PVDF 박막을 제조한다. 이때 박막의 두께는 30 ㎚ 내지 1 ㎜ 범위인 것이 바람한데, 박막의 두께는 PVDF/고분자 바인더 혼합물의 점도와 스핀 코팅 시의 회전속도 등을 변화시켜 조절할 수 있다.As a method of forming a ferroelectric PVDF thin film on a substrate using the PVDF / polymer binder mixture prepared as described above, a vacuum deposition method including a thermal evaporation method, spin coating, roll coating, Spray coating, printing, etc. may be mentioned, but it is not limited to this. In a preferred embodiment of the present invention, a PVDF thin film is prepared by spin coating the PVDF / polymer binder mixture onto a substrate. At this time, the thickness of the thin film is preferably in the range of 30 nm to 1 mm, the thickness of the thin film can be controlled by changing the viscosity of the PVDF / polymer binder mixture and the rotational speed during spin coating.
또한 단계 1)에서 강유전성 PVDF 박막 형성을 위한 PVDF/고분자 바인더 혼합물은 UV 경화를 촉진하기 위하여 고분자 바인더 외에 광개시제(photoinitiator), 다기능 단량체(multifunctional monomer), 광산 발생제(photoacid generator) 등과 같은 첨가제를 추가로 포함할 수 있다. 상기 첨가제 각각은 고분자 바인더 100 중량부에 대해 1 내지 100 중량부의 양으로 사용될 수 있다.In addition, in step 1), the PVDF / polymer binder mixture for forming the ferroelectric PVDF thin film adds an additive such as a photoinitiator, a multifunctional monomer, a photoacid generator, etc. in addition to the polymeric binder to promote UV curing. It can be included as. Each of the additives may be used in an amount of 1 to 100 parts by weight based on 100 parts by weight of the polymer binder.
광개시제는 광에 의해 자유 라디칼 또는 양이온을 발생시키는 통상의 개시제로서, PVDF 고분자 및 고분자 바인더의 공용매에 용해될 수 있는 물질이라면 그 종류에 제한 없이 사용될 수 있다. 본 발명에 적합한 광개시제로는 이가큐어(Irgacure) 369, 이가큐어 651, 이가큐어 907, TPO, CGI124, EPD/BMS 혼합계 등의 아세토페논 및 벤조페논계와 트리아진계를 사용하는 것이 바람직하다. 예를 들면, 상기 벤조폐논계 광개시제에는 벤조페논, 페닐비페닐케톤, 1-하이드록시-1-벤조일사이클로헥산, 벤질, 벤질다이메틸케탈, 1-벤질-1-다이메틸아미노-1-(4-몰포리노-벤조일)프로판, 2-몰포일-2-(4-메틸머캅토)벤조일프로판, 티오크산톤(thioxanthone), 1-클로로-4-프록시티오크산톤, 아이소프로필티오크산톤, 다이에틸티오크산톤, 에틸안트라퀴논, 4-벤조일-4-메틸다이페닐설파이드, 벤조인부틸에테르, 2-하이드록시-2-벤조일프로판, 2-하이드록시-2-(4-아이소프로필)벤조일프로판, 4-부틸벤조일트라이클로로메탄, 4-페녹시벤조일다이클로로메탄, 벤조일포름산메틸, 1,7-비스(9-아크리디닐)헵탄, 9-n-부틸-3,6-비스(2-몰포리노-아이소부틸로일)카바졸 등이 포함되고, 트리아진계 광개시제에는 2-메틸-4,6-비스(트라이클로로메틸)-s-트리아진, 2-페닐-4,6-비스(트라이클로로메틸)-s-트리아진, 2-나프틸-4,6-비스(트라이클로로메틸)-s-트리아진, 4,4-비스(다이페닐설포니오)-다이페닐설파이드 헥사플루오로안티모네이트(BDSDS), 4,4-(페닐티오)페닐다이페닐설포늄 헥사플루오로안디모네이트(PTPDS) 등이 포함되며, 이들은 단독으로 또는 둘 이상의 조합으로 사용될 수 있다. The photoinitiator is a conventional initiator that generates free radicals or cations by light, and may be used as long as it is a material that can be dissolved in the cosolvent of PVDF polymer and polymer binder. As a photoinitiator suitable for this invention, it is preferable to use acetophenone, benzophenone series, and a triazine system, such as Irgacure 369, Igacure 651, Igacure 907, TPO, CGI124, and EPD / BMS mixed system. For example, the benzophenone-based photoinitiator includes benzophenone, phenylbiphenyl ketone, 1-hydroxy-1-benzoylcyclohexane, benzyl, benzyldimethyl ketal, 1-benzyl-1-dimethylamino-1- (4 -Morpholino-benzoyl) propane, 2-morphoyl-2- (4-methylmercapto) benzoylpropane, thioxanthone, 1-chloro-4- hydroxythioxanthone, isopropyl thioxanthone, di Ethyl thioxanthone, ethyl anthraquinone, 4-benzoyl-4-methyldiphenylsulfide, benzoin butyl ether, 2-hydroxy-2-benzoylpropane, 2-hydroxy-2- (4-isopropyl) benzoylpropane , 4-butylbenzoyltrichloromethane, 4-phenoxybenzoyldichloromethane, methyl benzoyl formate, 1,7-bis (9-acridinyl) heptane, 9-n-butyl-3,6-bis (2- Morpholino-isobutyloyl) carbazole, and the like, and triazine photoinitiators include 2-methyl-4,6-bis (trichloromethyl) -s-triazine, 2-phenyl-4,6-bis (tri) Chloromethyl) -s-triazine, 2-naphthyl-4,6-bis (trichloromethyl) -s-triazine, 4,4-bis (diphenylsulfonio) -diphenylsulfide hexafluoroanti Monates (BDSDS), 4,4- (phenylthio) phenyldiphenylsulfonium hexafluoroandimonate (PTPDS), and the like, which may be used alone or in combination of two or more.
다기능 단량체는 불포화 이중결합이 두 개 이상 존재하는 단량체로서 PVDF 고분자 및 고분자 바인더의 공용매에 용해될 수 있는 것이라면 그 종류에 제한 없이 사용될 수 있다. 본 발명에 적합한 다기능 단량체의 예에는, 메타-다이비닐벤젠, 파라-다이비닐벤젠, 4,4'-다이비닐비페닐렌, 1,5-다이비닐나프탈렌, 사이클로헥산다이메탄올다이아크릴레이트, 다이에틸렌글리콜다이아크릴레이트, 트라이에틸렌글리콜다이아크릴레이트, 다이프로필렌글리콜다이아크릴레이트, 트라이프로필렌글리콜다이아크릴레이트, 비닐아크릴레이트, 1,2-에탄디올다이아크릴레이트, 1,3-프로판디올다이아크릴레이트, 1,3-부탄디올다이아크릴레이트, 1,4-부탄디올다이아크릴레이트, 1,5-펜탄디올다이아크릴레이트, 네오펜틸글리콜다이아크릴레이트, 1,6-헥산디올다이아크릴레이트, 비스페놀A다이아크릴레이트, 사이클로헥산다이메탄올다이메타크릴레이트, 비스페놀A다이메타크릴레이트, 메타크릴레이티드폴리부타디엔, 트라이에틸렌글리콜다이메타크릴레이트, 에틸렌글리콜다이메타크릴레이트, 1,4-부탄디올다이메타크릴레이트, 1,6-헥산디올다이메타크릴레이트, 네오펜틸글리콜다이메타크릴레이트, 우레탄아크릴레이트 등이 포함되며, 이들은 단독으로 또는 둘 이상의 조합으로 사용될 수 있다.The multifunctional monomer is a monomer having two or more unsaturated double bonds, and can be used without limitation as long as it can be dissolved in the cosolvent of the PVDF polymer and the polymer binder. Examples of the multifunctional monomer suitable for the present invention include meta-divinylbenzene, para-divinylbenzene, 4,4'-divinylbiphenylene, 1,5-divinylnaphthalene, cyclohexanedimethanol diacrylate, and di Ethylene glycol diacrylate, triethylene glycol diacrylate, dipropylene glycol diacrylate, tripropylene glycol diacrylate, vinyl acrylate, 1,2-ethanediol diacrylate, 1,3-propanediol diacrylate , 1,3-butanediol diacrylate, 1,4-butanediol diacrylate, 1,5-pentanediol diacrylate, neopentyl glycol diacrylate, 1,6-hexanediol diacrylate, bisphenol A diacryl Latex, cyclohexane dimethanol dimethacrylate, bisphenol A dimethacrylate, methacrylated polybutadiene, triethylene glycol dimetharate Relate, ethylene glycol dimethacrylate, 1,4-butanediol dimethacrylate, 1,6-hexanediol dimethacrylate, neopentylglycol dimethacrylate, urethane acrylate, and the like, which are alone Or in combination of two or more.
광산 발생제는 이온성 또는 비이온성으로 그 종류를 한정하지 않고 PVDF 고분자 및 고분자 바인더의 공용매에 용해될 수 있는 것이라면 제한 없이 사용될 수 있다. 상기 광산 발생제는 노광 공정 시 광을 흡수하여 산을 발생시키고, 이렇게 발생된 산은 가교 결합제에 의한 가교 결합반응에서 촉매 역할을 한다. 본 발명에 적합한 광산 발생제의 예에는, 다이아조늄염, 요오도늄염, 설포늄염, 다이아조설포닐 화합물, 설포닐옥시이미드, 니트로벤질설포네이트 에스테르, 다이페닐요오도늄 트라이플루오로메탄 설포네이트, 다이페닐요오도늄 노나플루오로부탄 설포네이트, 트라이페닐설포늄 트라이플루오로메탄 설포네이트, 트리아진, 옥사졸, 옥사다이아졸, 티아졸, 페놀계 설폰산 에스테르, 비스-설포닐메탄, 비스-설포닐에탄, 비스-설포닐다이아조메탄, 트라이페닐설포늄 트리스(트라이플루오로메틸설포닐)메타이드, 다이페닐요오도늄 비스(트라이플루오로메틸설포닐)이미드 및 이들의 동족체들이 포함된다. 상기 화합물은 단독으로 또는 둘 이상의 조합으로 사용될 수 있다.The photoacid generator may be used without limitation as long as it is ionic or nonionic and can be dissolved in the cosolvent of PVDF polymer and polymer binder. The photoacid generator absorbs light in the exposure process to generate an acid, and the generated acid acts as a catalyst in the crosslinking reaction by the crosslinking agent. Examples of photoacid generators suitable for the present invention include diazonium salts, iodonium salts, sulfonium salts, diazosulfonyl compounds, sulfonyloxyimides, nitrobenzylsulfonate esters, diphenyliodonium trifluoromethane sulfonates, Diphenyliodonium nonafluorobutane sulfonate, triphenylsulfonium trifluoromethane sulfonate, triazine, oxazole, oxadiazole, thiazole, phenolic sulfonic acid ester, bis-sulfonylmethane, bis- Sulfonylethane, bis-sulfonyldiazomethane, triphenylsulfonium tris (trifluoromethylsulfonyl) methide, diphenyliodonium bis (trifluoromethylsulfonyl) imide and their analogs do. The compounds may be used alone or in combination of two or more.
단계 2)는 단계 1)에서 제조된 PVDF 박막에 원하는 형상으로 패턴화된 마스크를 통해 UV를 조사하여 조사된 부분이 가교되도록 유도한 후, 용매를 사용하여 가교되지 않은 부분을 제거하여 패턴 어레이를 형성하는 단계이다. 이때, UV 조사는 100 내지 700 ㎚의 파장에서 UV를 10 내지 10,000 mJ/㎠의 출력으로 1 내지 10,000초간 조사하여 수행된다. 상기와 같이 PVDF 박막에 마스크를 통해 UV가 조 사되면, UV가 조사된 부분에서만 경화가 일어나 가교가 형성되기 때문에, 이어지는 용매 처리에 의해 UV 조사에 의해 경화된 부분은 남게 되고 UV가 조사되지 않은 부분만이 제거됨으로써 원하는 형상의 패턴 어레이를 얻을 수 있다.In step 2), the PVDF thin film prepared in step 1) is irradiated with UV through a patterned mask in a desired shape to induce the irradiated portion to crosslink, and then, using a solvent, the uncrosslinked portion is removed to form a pattern array. Forming. At this time, the UV irradiation is performed by irradiating UV at a wavelength of 100 to 700 nm for 1 to 10,000 seconds at an output of 10 to 10,000 mJ / cm 2. When UV is irradiated on the PVDF thin film through a mask as described above, since curing occurs only in the UV-irradiated portion, crosslinking is formed, the portion cured by UV irradiation by the subsequent solvent treatment is left and UV is not irradiated. By removing only the portions, a pattern array of a desired shape can be obtained.
이 단계에서 PVDF 박막의 경화되지 않은 부분의 제거를 위해 사용되는 용매는 단계 1)에서 PVDF 고분자와 고분자 바인더의 용해를 위해 사용된 것과 동일한 용매를 사용한다. In this step, the solvent used for removal of the uncured portion of the PVDF thin film uses the same solvent as that used for dissolving the PVDF polymer and the polymer binder in step 1).
상기와 같이 원하는 형상의 패턴 어레이가 형성된 PVDF 박막은 패턴 어레이의 결정화를 조절하여 강유전성을 극대화하기 위하여 추가로 열처리 단계를 거칠 수 있다. 열처리는 형성된 PVDF 박막의 패턴 어레이를 PVDF 결정의 용융점 이상의 온도로 승온하여 1 내지 30분간 열처리를 한 후 상온 이하의 온도로 급속 냉각시키고, 이어서 상기 용융점보다 10 내지 100℃ 정도 낮은 온도로 승온하여 1 내지 1,000 분 동안 열처리를 한 후 다시 상온으로 냉각시키는 과정에 의해 수행될 수 있다.As described above, the PVDF thin film on which the pattern array of the desired shape is formed may be further subjected to a heat treatment step in order to maximize the ferroelectricity by controlling the crystallization of the pattern array. The heat treatment is performed by heating the pattern array of the formed PVDF thin film to a temperature higher than the melting point of the PVDF crystal, performing heat treatment for 1 to 30 minutes, and then rapidly cooling the temperature below the normal temperature, and then raising the temperature to about 10 to 100 ° C. lower than the melting point. After the heat treatment for 1,000 minutes to may be carried out by the process of cooling to room temperature again.
전술한 바와 같이, 본 발명에 따른 강유전성 PVDF 박막의 패턴 어레이 형성방법은, 화학적 안정성이 우수하여 화학개질이 어려운 PVDF 고분자의 특성상 임프린트 방법과 같은 물리적 패턴화만이 가능하였고, 그로 인해 정교한 패턴화 및 대량 패턴화가 불가능했던 PVDF 박막의 패턴 어레이 형성에 있어서의 문제점을 극복한 발명으로, PVDF 고분자와의 상용성이 우수하고 UV 경화가 가능한 고분자 바인더를 사용하여 PVDF 고분자의 결정구조와 상관없이 강유전성 PVDF 패턴 어레이를 정교하고 대량으로 형성할 수 있어 고집적 디바이스에의 응용에 매우 유용하게 적용 될 수 있다. As described above, the method of forming the pattern array of the ferroelectric PVDF thin film according to the present invention was only capable of physical patterning such as an imprint method due to the characteristics of the PVDF polymer, which is difficult to chemically modify due to its excellent chemical stability, and thus, fine patterning and bulk This invention overcomes the problems in the formation of the pattern array of PVDF thin film, which was impossible to pattern, and uses a high-compatibility and UV-curable polymer binder with PVDF polymer, and thus the ferroelectric PVDF pattern array regardless of the crystal structure of PVDF polymer. It can be formed very precisely and in a large amount, so it can be very useful for application in high density devices.
이하, 실시예를 통하여 본 발명을 더욱 상세히 설명하기로 한다. 이들 실시예는 오로지 본 발명을 보다 구체적으로 설명하기 위한 것으로, 본 발명의 요지에 따라 본 발명의 범위가 이들 실시예에 의해 제한되지 않는다는 것은 당업계에서 통상의 지식을 가진 자에게 자명할 것이다.Hereinafter, the present invention will be described in more detail with reference to Examples. These examples are only for illustrating the present invention more specifically, it will be apparent to those skilled in the art that the scope of the present invention is not limited by these examples in accordance with the gist of the present invention.
실시예 1Example 1
PVDF 고분자 1 g, 상기 화학식 2의 고분자 바인더 0.2 g, 다기능 단량체로 1,2-에탄디올다이아크릴레이트 0.01 g, 및 광개시제로 이가큐어 148D 0.01 g를 DMF 20 ㎖에 녹여 박막 형성을 위한 PVDF/고분자 바인더 혼합물을 제조하였다. 제조된 혼합물을 알루미늄이 코팅된 실리콘 웨이퍼 위에 2,000 rpm의 속도로 스핀 코팅하여 200 ㎚ 두께의 PVDF 박막을 제조하였다. 제조된 PVDF 박막 위에 원하는 형상으로 패턴화된 마스크를 설치하고 254 ㎚ 파장의 UV를 500 mJ/㎠로 3분간 조사하여 UV가 조사된 부분에서 경화를 유도하였다. UV 조사 후, DMF를 사용하여 PVDF 박막 위에 가교되지 않은 부분을 용해시켜 제거하여 PVDF 박막의 패턴 어레이를 형성하였다(도 1). 형성된 PVDF 박막의 패턴 어레이를 PVDF 결정의 용융점 이상으로 승온하여 5분간 열처리 한 후 상온 이하의 온도로 급속 냉각시켰다. 이어서 PVDF 결정의 용융점보다 50℃ 낮은 온도로 승온하여 1시간 동안 열처리를 한 후 다시 상온으로 냉각시켜 PVDF 박막 패턴 어레이의 강유전성 특성을 극대화시켰다. 1 g PVDF polymer, 0.2 g polymer binder of Formula 2, 0.01 g of 1,2-ethanediol diacrylate as a multifunctional monomer, and 0.01 g of igcure 148D as a photoinitiator in 20 ml of DMF to form PVDF / polymer A binder mixture was prepared. The prepared mixture was spin coated on an aluminum coated silicon wafer at a speed of 2,000 rpm to prepare a 200 nm thick PVDF thin film. A mask patterned into a desired shape was installed on the prepared PVDF thin film, and UV irradiation at a wavelength of 254 nm was performed at 500 mJ / cm 2 for 3 minutes to induce curing at the UV-irradiated portion. After UV irradiation, the uncrosslinked portion was dissolved and removed on the PVDF thin film using DMF to form a pattern array of the PVDF thin film (FIG. 1). The pattern array of the formed PVDF thin film was heated above the melting point of the PVDF crystal and heat-treated for 5 minutes, and then rapidly cooled to a temperature below normal temperature. Subsequently, the temperature was lowered to 50 ° C lower than the melting point of the PVDF crystals, and then heat-treated for 1 hour and then cooled to room temperature to maximize the ferroelectric properties of the PVDF thin film pattern array.
상기와 같이 제조된 PVDF 박막 패턴 어레이의 강유전성 특성을 조사하기 위 해 잔류 분극(Remanent polarization, Pr) 및 항전압(Coercive field, Ec)을 측정하였고, 이를 하기 표 1에 나타내었다. 도 2는 상기에서 제조된 PVDF 박막의 패턴 어레이를 현미경으로 관찰한 결과이고, 도 3은 상기 PVDF 박막의 패턴 어레이의 강유전성 특성 P-E 곡선을 나타낸 것이다.In order to investigate the ferroelectric properties of the PVDF thin film pattern array prepared as described above, residual polarization (P r ) and constant voltage (Coercive field, E c ) were measured, which are shown in Table 1 below. FIG. 2 is a result of observing a pattern array of the PVDF thin film prepared above under a microscope, and FIG. 3 shows a ferroelectric characteristic PE curve of the pattern array of the PVDF thin film.
실시예 2Example 2
상기 화학식 3의 고분자 바인더 0.2 g를 사용하는 것을 제외하고는 실시예 1과 동일한 방법으로 강유전성 PVDF 박막의 패턴 어레이를 형성하였고, 이의 강유전성 특성을 조사하여 하기 표 1에 나타내었다.A patterned array of ferroelectric PVDF thin films was formed in the same manner as in Example 1 except that 0.2 g of the polymer binder of Chemical Formula 3 was used, and the ferroelectric characteristics thereof were investigated and shown in Table 1 below.
실시예 3Example 3
상기 화학식 4의 고분자 바인더 0.2 g 및 광개시제로 4,4-비스(다이페닐설포니오)-다이페닐설파이드 헥사플루오로안티모네이트(BDSDS)/4,4-(페닐티오)페닐다이페닐설포늄 헥사플루오로안디모네이트(PTPDS) 0.01 g를 사용하는 것을 제외하고는 실시예 1과 동일한 방법으로 강유전성 PVDF 박막의 패턴 어레이를 형성하였고, 이의 강유전성 특성을 조사하여 하기 표 1에 나타내었다.0.2 g of the polymeric binder of Formula 4 and 4,4-bis (diphenylsulfonio) -diphenylsulfide hexafluoroantimonate (BDSDS) / 4,4- (phenylthio) phenyldiphenylsulfonium as a photoinitiator A patterned array of ferroelectric PVDF thin films was formed in the same manner as in Example 1 except that 0.01 g of hexafluoroandimonate (PTPDS) was used, and the ferroelectric properties thereof were investigated and shown in Table 1 below.
표 1 및 도 3에 나타난 바와 같이, 본 발명에 따라 제조된 강유전성 PVDF 박막의 패턴 어레이는 잔류 분극 및 항전압의 수준이 각각 50 mC/㎡ 및 45 MV/m이며 기존에 미세임프린팅과 같은 물리적 방법에 의해 제조된 패턴 어레이에 비해 우수한 강유전성 특성을 나타냄을 확인하였다. 상기 결과로부터 본 발명에 따라 PVDF 고분자와 상용성이 있으면서 UV 경화가 가능한 고분자 바인더를 사용하면 강유전성이 우수한 PVDF 박막의 패턴 어레이를 정교하면서도 대량으로 형성할 수 있음을 알 수 있다. As shown in Table 1 and Figure 3, the pattern array of the ferroelectric PVDF thin film prepared in accordance with the present invention has a residual polarization and a constant voltage level of 50 mC / ㎡ and 45 MV / m, respectively, and the conventional physical imprinting such as microimprinting It was confirmed that the ferroelectric properties were excellent compared to the pattern array manufactured by the method. From the above results, it can be seen that by using the polymer binder capable of UV curing while being compatible with the PVDF polymer according to the present invention, it is possible to form a pattern array of the PVDF thin film having excellent ferroelectricity in a sophisticated and large amount.
이상으로 본 발명 내용의 특정 부분을 상세히 기술하였는바, 당업계의 통상의 지식을 가진 자에게 있어서, 이러한 구체적 기술은 단지 바람직한 실시태양일 뿐이며, 이에 의해 본 발명의 범위가 제한되는 것이 아닌 점은 명백할 것이다. 따라서 본 발명의 실질적인 범위는 첨부된 청구항들과 그것들의 등가물에 의하여 정의된다고 할 것이다.The specific parts of the present invention have been described in detail above, and for those skilled in the art, these specific descriptions are merely preferred embodiments, and the scope of the present invention is not limited thereto. Will be obvious. Thus, the substantial scope of the present invention will be defined by the appended claims and their equivalents.
도 1은 본 발명에 따라 고분자 바인더를 이용하여 PVDF 박막의 패턴 어레이를 제조하는 방법을 개략적으로 나타낸 것이고, 1 schematically illustrates a method of manufacturing a pattern array of PVDF thin films using a polymer binder according to the present invention,
도 2는 본 발명에 따라 실시예 1에서 제조된 PVDF 박막의 패턴 어레이를 현미경으로 관찰한 결과이고,2 is a result of observing the pattern array of the PVDF thin film prepared in Example 1 according to the present invention under a microscope,
도 3은 본 발명에 따라 실시예 1에서 제조된 PVDF 박막의 패턴 어레이의 강유전성 특성 P-E 곡선을 나타낸 것이다.Figure 3 shows the ferroelectric characteristics P-E curve of the pattern array of the PVDF thin film prepared in Example 1 according to the present invention.
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