KR100983838B1 - 투명 전도성 산화물의 무기 코팅을 갖는 호일 조각의 제조 방법 - Google Patents

투명 전도성 산화물의 무기 코팅을 갖는 호일 조각의 제조 방법 Download PDF

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Publication number
KR100983838B1
KR100983838B1 KR1020077018287A KR20077018287A KR100983838B1 KR 100983838 B1 KR100983838 B1 KR 100983838B1 KR 1020077018287 A KR1020077018287 A KR 1020077018287A KR 20077018287 A KR20077018287 A KR 20077018287A KR 100983838 B1 KR100983838 B1 KR 100983838B1
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South Korea
Prior art keywords
foil
temporary substrate
layer
substrate
cutting line
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Expired - Lifetime
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KR1020077018287A
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English (en)
Korean (ko)
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KR20070114270A (ko
Inventor
종 루드밀라 브이. 드
Original Assignee
아크조 노벨 엔.브이.
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Application filed by 아크조 노벨 엔.브이. filed Critical 아크조 노벨 엔.브이.
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Application granted granted Critical
Publication of KR100983838B1 publication Critical patent/KR100983838B1/ko
Assigned to 헬리안토스 베.뷔. reassignment 헬리안토스 베.뷔. 권리의 전부이전등록 Assignors: 아크조 노벨 엔.브이.
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H10F71/1395—Manufacture or treatment of devices covered by this subclass using temporary substrates for thin-film devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension

Landscapes

  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Laminated Bodies (AREA)
  • Cylinder Crankcases Of Internal Combustion Engines (AREA)
KR1020077018287A 2005-04-06 2006-03-31 투명 전도성 산화물의 무기 코팅을 갖는 호일 조각의 제조 방법 Expired - Lifetime KR100983838B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
EP05075792 2005-04-06
EP05075792.1 2005-04-06
US67628605P 2005-05-02 2005-05-02
US60/676,286 2005-05-02

Publications (2)

Publication Number Publication Date
KR20070114270A KR20070114270A (ko) 2007-11-30
KR100983838B1 true KR100983838B1 (ko) 2010-09-27

Family

ID=35063187

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077018287A Expired - Lifetime KR100983838B1 (ko) 2005-04-06 2006-03-31 투명 전도성 산화물의 무기 코팅을 갖는 호일 조각의 제조 방법

Country Status (9)

Country Link
US (1) US20080190482A1 (https=)
EP (1) EP1866974B1 (https=)
JP (1) JP2008537643A (https=)
KR (1) KR100983838B1 (https=)
CN (1) CN100568544C (https=)
AR (1) AR053209A1 (https=)
ES (1) ES2672648T3 (https=)
TW (1) TW200723554A (https=)
WO (1) WO2006106072A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE602006018976D1 (de) * 2005-09-29 2011-01-27 Dow Corning Verfahren zum abtrennen von hochtemperaturfilmen und/oder vorrichtungen von metallsubstraten
DE102008008726A1 (de) * 2008-02-12 2009-09-24 Schott Solar Gmbh Photovoltaisches Modul und Verfahren zu dessen Herstellung
TWI423463B (zh) * 2008-12-12 2014-01-11 Sun Well Solar Corp 以溶凝膠法合成半導體化合物薄膜層的製造方法
US20140130858A1 (en) * 2012-11-15 2014-05-15 Samsung Sdi Co., Ltd. Solar cell
FR3017243B1 (fr) * 2014-02-05 2016-02-12 Nexcis Procede de fabrication d’un empilement de couches minces decollable de son substrat
CN110518079B (zh) * 2019-09-29 2024-05-07 信利半导体有限公司 一种光电转换率高的薄膜光伏电池及其制备工艺
US11096288B2 (en) * 2019-12-20 2021-08-17 Xerox Corporation Flexible conductive printed circuits with printed overcoats

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5385848A (en) * 1993-09-20 1995-01-31 Iowa Thin Film Technologies, Inc Method for fabricating an interconnected array of semiconductor devices
KR20000048653A (ko) * 1996-09-26 2000-07-25 샬크비즈크 피이터 코르넬리스; 페트귄터 광전지 호일 제조 방법
WO2005015638A1 (en) 2003-07-22 2005-02-17 Akzo Nobel N.V. Process for manufacturing a solar cell foil using a temporary substrate

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4484132A (en) * 1981-03-09 1984-11-20 Crites Nelson A Crack detecting system
US5181968A (en) 1991-06-24 1993-01-26 United Solar Systems Corporation Photovoltaic device having an improved collector grid
US5637537A (en) * 1991-06-27 1997-06-10 United Solar Systems Corporation Method of severing a thin film semiconductor device
US5457057A (en) * 1994-06-28 1995-10-10 United Solar Systems Corporation Photovoltaic module fabrication process
US6003421A (en) * 1997-08-15 1999-12-21 Milich; Bruce Apparatus and method for cutting elongated webs of material
JPH11238897A (ja) * 1998-02-23 1999-08-31 Canon Inc 太陽電池モジュール製造方法および太陽電池モジュール
US6160215A (en) * 1999-03-26 2000-12-12 Curtin; Lawrence F. Method of making photovoltaic device
US6274458B1 (en) * 1999-07-07 2001-08-14 Agere Systems Optoelectronics Guardian Corp. Method of gas cleaving a semiconductor product
US6452091B1 (en) * 1999-07-14 2002-09-17 Canon Kabushiki Kaisha Method of producing thin-film single-crystal device, solar cell module and method of producing the same
JP2002033296A (ja) * 2000-04-26 2002-01-31 Lintec Corp シリコンウエハ用の補強材および該補強材を用いたｉｃチップの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5385848A (en) * 1993-09-20 1995-01-31 Iowa Thin Film Technologies, Inc Method for fabricating an interconnected array of semiconductor devices
KR20000048653A (ko) * 1996-09-26 2000-07-25 샬크비즈크 피이터 코르넬리스; 페트귄터 광전지 호일 제조 방법
WO2005015638A1 (en) 2003-07-22 2005-02-17 Akzo Nobel N.V. Process for manufacturing a solar cell foil using a temporary substrate

Also Published As

Publication number Publication date
TW200723554A (en) 2007-06-16
CN101151738A (zh) 2008-03-26
ES2672648T3 (es) 2018-06-15
WO2006106072A1 (en) 2006-10-12
US20080190482A1 (en) 2008-08-14
HK1110994A1 (zh) 2008-07-25
KR20070114270A (ko) 2007-11-30
EP1866974A1 (en) 2007-12-19
JP2008537643A (ja) 2008-09-18
AR053209A1 (es) 2007-04-25
CN100568544C (zh) 2009-12-09
EP1866974B1 (en) 2018-01-10

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