KR100979638B1 - Manufacturing method of contactor and contactor thereof - Google Patents

Abstract

The present invention relates to a method of manufacturing a contactor (Contactor) and a contactor thereby. Method of manufacturing a contactor according to the present invention comprises the steps of providing a substrate through which the hole is formed; Applying a silicone pretreatment agent comprising allyl-alkoxy silane to the surface of the hole; Providing a conductive silicon compound comprising a silicone resin and conductive metal particles; Inserting the conductive silicon compound into the hole to make direct contact with the silicon pretreatment agent. Thereby, the manufacturing method of the contactor with which stability was improved is provided.

BGA, Test, Contactor, Copper Clad Laminate (CCL), Probe Card, MEMS Card

Description

MANUFACTURING METHOD OF CONTACTOR AND CONTACTOR THEREOF}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a contactor used for testing electrical performance of semiconductor devices and various electronic cards, and a contactor manufactured thereby.

The conventional semiconductor device test contactor is interposed between the semiconductor device and the test socket board and has a problem in that it is frequently replaced due to its short life due to repeated pressurization, friction, and the like.

Recently proposed for a semiconductor device tester, Patent Registration No. 10-0448414 "Integrated silicon contactor and its manufacturing apparatus and manufacturing method", Utility Model Registration No. 20-0278989 "Ring type contactor of integrated silicon contactor Pad ”and the like, and in particular, Patent No. 10-0508088 entitled“ Test Device and Method for Chip Scale Package ”as a contactor using Pogo Pin.

However, there is still a need for extending the service life of a product for almost all of the contactors used to date, including the techniques disclosed in the above-registered patents and utility models. This problem also exists in the contactor for inspecting the probe card and the contactor for inspecting the MEMS card.

It is an object of the present invention to provide a contactor having an extended service life compared to the prior art and a contactor manufactured thereby.

The object is to provide a substrate through which the hole is formed; Applying a silicone pretreatment agent comprising allyl-alkoxy silane to the surface of the hole; Providing a conductive silicon compound comprising a silicone resin and conductive metal particles; And inserting the conductive silicon compound into the hole to make direct contact with the silicon pretreatment agent.

The allyl-alkoxy silane coupling agent may be represented by the following formula.

Here, Y ₂ represents a functional group having an allyl group, n is an integer between 0 and 5, R ₂ may be any one of -CH ₃ , -C ₂ H ₅ , COCH ₃ .

The allyl-alkoxy silane coupling agent may include allyltrimethoxysilane.

The silicon pretreatment may further include heptane and tetrabutyl titanate.

The above object is to form a silicon layer is laminated on the upper and lower surfaces, respectively, a plurality of central holes formed; An upper plate formed on the upper surface of the middle plate and having a plurality of upper holes formed to correspond to the plurality of central holes; A lower plate stacked on a bottom surface of the middle plate and having a plurality of lower holes formed to correspond to the plurality of central holes; And a conductive silicon compound formed in the central hole, the upper hole and the lower hole, wherein each plate and the conductive silicon compound are achieved by a contactor coupled by allyltrimethoxysilane.

The above object is to form a silicon layer is laminated on each of the upper and lower surfaces, a plurality of central holes are formed; An upper plate formed on the upper surface of the middle plate and having a plurality of upper holes formed to correspond to the plurality of central holes; A lower plate stacked on a bottom surface of the middle plate and having a plurality of lower holes formed to correspond to the plurality of central holes; And a conductive silicon compound formed in the center hole, the upper hole and the lower hole, wherein the silicon layer of the middle plate and the top plate are achieved by a contactor coupled by allyltrimethoxysilane.

The object is a CCL (Copper Clad Laminate) through which a plurality of central holes are formed, and a first plating film containing a conductive metal is formed on an inner wall surface of each central hole, and a predetermined around the top and bottom of each center hole is formed from the first plating film. A middle plate having a first plating circuit extending in a width; A plurality of upper holes are formed through the CCL to be stacked on the upper surface of the middle plate so as to correspond to the plurality of central holes, and a second plating film containing a conductive metal is formed on the inner wall of each upper hole, and the second plating film is formed. An upper plate having a second plating circuit extending from the upper and lower ends of each upper hole by a predetermined width from the upper surface; A plurality of lower holes are formed through the rigid CCL to be stacked on the lower surface of the middle plate so as to correspond to the plurality of central holes, and a third plating film containing a conductive metal is formed on the inner wall of each lower hole. A lower plate having a third plating circuit extending from the plating film to a predetermined width around upper and lower ends of each lower hole; And a conductive silicon compound formed in the center hole, the upper hole and the lower hole, wherein each plate and the conductive silicon compound are achieved by a contactor coupled by allyltrimethoxysilane.

The semiconductor device may further include an elastic member inserted and supported in common at each of the central hole, the upper hole, and the lower hole, and the conductive silicon compound may be located in the elastic member.

The conductive silicon compound and the elastic member may be coupled by allyl trimethoxysilane.

According to the present invention as described above, there is provided a method of manufacturing a contactor with improved stability and a contactor thereby.

In the following description, a contactor used for testing a semiconductor device among the contactors will be described as an example. However, the present invention is not limited thereto, but may be applied to a contactor for a probe card and a contactor for a MEMS card.

The semiconductor device test contactor according to the first embodiment of the present invention (hereinafter, also referred to simply as "contactor", 100), as shown in Figure 1, between the semiconductor device 10 and the test socket board 20 It is provided on and used to secure the electrical connection up and down.

In detail, a ball lead 11 constituting a ball grid array (BGA) is formed on the bottom surface of the semiconductor device 10, and correspondingly, a lower test socket board 20 may be formed. A plurality of contact pads 21 protrude from the upper surface. The semiconductor device test contactor 100 is responsible for securing an electrical connection between the ball lead 11 and the contact pad 21.

The contactor 100 includes an upper plate 110, a middle plate 120, and a lower plate 130 disposed up and down with each other, and each of the plates 110, 120, and 130 has holes 111, 121, and 131 at positions corresponding to each other. ) Is formed.

Each of the holes 111, 121, and 131 has plated films 112, 122, and 132 formed on a surface thereof, and extends to the plated films 112, 122, and 132, and the upper surfaces of the plates 110, 120, and 130. Plating circuits 113, 123, and 133 are formed in a lower surface with a predetermined width.

The material of the upper plate 110, the middle plate 120 and the lower plate 130 is used by processing CCL (Copper Clad Laminate). In particular, the upper plate 110 and the middle plate 120 may be selectively used hard CCL or soft CCL. However, the lower plate 130 is limited to the hard CCL.

CCL is a substrate that is usually a raw material of a printed circuit board (PCB), and a thin copper film is adhered to the upper and lower surfaces of a film made of polyimide, prepreg, epoxy resin, or the like. Say that it has been.

The flexible CCL has a relatively low hardness and good warpage compared to the rigid CCL. As the material of the film, a material of a flexible printed circuit board (FPC) such as polyimide, prepreg, polyester, etc. is mainly used. Those used as are used.

Such flexible CCL may be provided with a film having various thicknesses. For example, when manufacturing a polyimide film, the flexible CCL may have a thickness of 12.5 [μm], 17.5 [μm], 35 [μm], 70-100 [μm] or more. In the case of the prepreg film, it may be provided in a thickness of 35 [μm], 60 [μm], 80 [μm], 100 [μm], 180 [μm] or more.

Therefore, the use of such a CCL in the manufacture of a semiconductor device test contactor has the advantage that it is easy to cope with the thickness specification required for the contactor.

On the other hand, the rigid CCL is a relatively high hardness as the material is mainly used for rigid printed circuit boards (Rigid Printed Circuit Board) such as phenol resin (Phenol Resin), epoxy resin, composite (Composite) substrate.

Such CCLs are commonly used as intermediates for manufacturing PCBs.

By limiting the lower plate 130 to the hard CCL in the above, without having to attach a separate reinforcing plate (usually made of a material of SUS-304) for supporting the contactor 100, the lower plate 130 of the hard CCL material ) Itself can function as a reinforcement plate.

In contrast, the upper plate 110 and the middle plate 120 may selectively apply any one of the hard CCL and the soft CCL as necessary.

When the upper, middle, and lower plates 110, 120, and 130 all use hard CCL as a material, there may be a concern that the semiconductor device 10 to the test socket board 20 that are in pressure contact therewith may be damaged. This damage can be prevented through shock absorption of the silicon layers 114, 124, 125, and 134 formed between the middle plate 120 and the upper and lower plates 110 and 130, respectively.

Each substrate 110, 120, 130 forms holes 111, 121, 131 in such a CCL through a drill process, and then on the copper thin film and the holes 111, 131 through an electroless chemical copper plating process. ) A copper thin film of a predetermined thickness is further formed on the inner wall surface. Then, after the photosensitive film is coated on the CCL surface, the exposure and development processes are performed to form the desired plating circuits 113, 123, and 133 on the surface (see FIG. 2), and then the plating circuit and the hole plated with copper. (111, 121, 131) After the copper plating on the inner wall surface again, through the corrosion process, electroless nickel plating and electroless gold plating process, a flexible and hard CCL with a circuit can be obtained.

As such, by using a material used for manufacturing a conventional printed circuit board as a main material of the contactor 100, the wear resistance, friction resistance, durability, service life, Contact performance, workability, etc. can be improved.

The plating circuits 113, 123, and 133 extending from the plating films 112, 122, and 132 to the upper and lower surfaces of the plates 110, 120, and 130 have a predetermined width in the radial direction on the upper and lower surfaces of the plate. Is formed.

Accordingly, the plating circuits 113, 123, and 133 may be formed in a circular shape as shown in FIG. 2, but are not limited thereto and may be formed in a polygonal shape as necessary.

As shown in FIG. 1, the plating circuit 113 formed on the upper surface of the upper plate 110 has a portion 113a extending to protrude into the upper end of the upper hole 111. The plating circuit 133 formed on the lower surface has a portion 133a extending to protrude into the lower end of the lower hole 131.

According to the shapes of the plating circuits 113 and 133, the contact performance between the bore 11 on the semiconductor element 10 side and the contact pad 21 on the test socket board 20 side can be improved.

In addition, portions 113a and 133a of which the upper and lower portions of the elastic members 140 commonly inserted into the holes 111, 121 and 131 disposed up and down are extended to the plating circuits 113 and 133 as described below. Can be supported by.

The lengths of the extended portions 113a and 133a of the plating circuits 113 and 133 may be adjusted according to the plating amount of copper in the above-described electroplating process. At this time, as the plating amount increases, the extension portions 113a and 133a gradually move into the holes 111 and 131.

Meanwhile, by forming an insulating silicon layer between the upper plate 110 and the middle plate 120 and between the middle plate 120 and the lower plate 130, the upper plate 110 and the lower plate 130 are formed on the upper and lower surfaces of the middle plate 120. In addition to improving the adhesiveness when forming a laminate, it is possible to have an elastic restoring force for the up and down pressure contact when the contactor 100 is completed.

That is, the first insulating silicon layers 125 and 126 are laminated on the upper and lower surfaces of the middle plate 120, respectively, and the lower surface of the upper plate 110 is disposed at a position corresponding to the first insulating silicon layer 125. The second insulating silicon layer 115 is formed, and the third insulating silicon layer 135 is formed on the upper surface of the lower plate 130 at a position corresponding to the first insulating silicon layer 126.

The upper, middle, and lower plates 110, 120, and 130 each having an insulating silicon layer are disposed to be stacked up and down, and then a silicon primer is applied to surfaces facing each other, heated, cured, and attached to each other. The lower plates 110, 120, and 130 are formed to be stacked together as one another.

In this case, the insulating silicon layer may be formed by interposing the plate 110, 120, or 130 between upper and lower molds, and then injecting and curing silicon between the molds.

Meanwhile, the insulating silicon layer may further include a heat dissipation function. For this, the insulating silicon layer may be further dispersed by adding aluminum oxide (Al ₂ O ₃ ) powder to conventional silicon. In the case of a contactor applied to a test socket for a high frequency integrated circuit, since a lot of heat is generated from the test socket, it is necessary to smoothly release it to the outside through the heat dissipating silicon layer.

In addition, the insulating silicon layer is controlled between the plating circuit 113 of the upper plate 110 and the plating circuit 123 of the middle plate and the plating circuit 123 of the middle plate 120 and the plating circuit of the lower plate 130 by adjusting the thickness thereof. The distance d may be formed between the respective 133.

Accordingly, the contactor 100 is normally maintained in a state in which the plating circuits between the upper, middle, and lower plates 110, 120, and 130 are spaced apart from each other, and are pressed upward and downward by the semiconductor device 10 and the test socket board 20. When the up and down conduction through the elastic member to be described later, the up and down conduction is made through the contact between the plating circuit spaced apart from each other up and down.

As such, by forming a gap d between the upper and lower plating circuits by controlling the thickness of the insulating silicon layer, damage due to repeated use of the contactor 100 may be minimized.

On the other hand, the semiconductor device test contactor 100 according to the first embodiment of the present invention is a plated film 112, 122, 132 in the holes (111, 121, 131) of each plate (110, 120, 130) It further includes an elastic member 140 is inserted into the inside.

1 and 3, the elastic member 140, the first cylinder portion 141 is inserted into the upper hole 111, the second cylinder portion 143 is inserted into the central hole 121, The third cylinder portion 145 inserted into the lower hole 131 is formed to be disposed up and down, and the first spring portion 142 and between the upper and lower neighboring cylinder portions (between 141 and 143 and between 143 and 145) The second spring portion 144 is formed integrally.

Such an elastic member 140 may be obtained by processing a fine pipe made of a conductive metal, a fine metal pipe that is generally used as a material of a pogo pin, and the processing thereof may also be performed by using a conventional pogo pin. It requires precision of manufacturing.

Accordingly, the elastic member 140 processed as shown in FIG. 3 is formed to penetrate up and down, and accommodates and supports the conductive silicon compound 150 therein as described below.

Gold plating may be performed on the surface of the elastic member 140, and in this case, the conductivity of the elastic member 140 may be improved.

According to the elastic member 140 having the above configuration, as shown in Figure 4, after the upper plate 110, the middle plate 120 and the lower plate 130 are produced separately and arranged to be stacked on each other, After the second cylinder portion 143 of the elastic member 140 is inserted into and supported in the central hole 121, the first cylinder portion 141 and the third cylinder portion 145 formed on both upper and lower ends thereof are plated. It can be assembled by being inserted and supported in the holes 111 and 131 of the.

At this time, when the second cylinder part 143 is inserted into the central hole 121, the second cylinder part 143 is supported in a manner of being attached to the plating film 122 formed on the inner wall surface of the hole 121. Attachment between the two takes place through the application and heating of the silicone pretreatment.

The first cylinder portion 141 and the third cylinder portion 145 are also supported by the inner wall surface of the upper hole 111 and the lower hole 131 in the same manner as the second cylinder portion 143.

However, the manner in which the elastic member 140 is inserted into and supported in the holes 111, 121, and 131 is not limited to the above.

That is, in the state in which the second cylinder portion 143 of the elastic member 140 is inserted into the central hole 121 in FIG. 4, the upper plate 110, the middle plate 120, and the middle plate 120 and the lower plate 130 are left as it is. By laminating and attaching, the upper and lower ends of the elastic member 140 may be contacted and supported by the extended portions 113a and 133a of the plating films 113 and 133, respectively.

At this time, the elastic member 140 is supported in the vertical direction by the extending portion (113a, 133a) of the plated film 113, 133 is supported in the transverse direction by the inner wall of the holes (111, 121, 131). do. Therefore, in this case, the cylinders 141 can be supported without attaching the cylinder portions 141, 143, and 145 to the inner wall surfaces of the holes 111, 121, and 131.

According to the elastic member 140 as described above, it is possible to improve the elastic restoring force of the contactor 100 which is contacted up and down by the bore 11 and the contact pad 21 as well as the elastic member 140 itself. Since the conduction function can be achieved, the overall conduction performance of the contactor 100 is improved.

On the other hand, as shown in Figure 1, the semiconductor device test contactor 100 according to the first embodiment of the present invention and the elastic member 140 and the inside of the holes 111, 121, 131 formed through A conductive silicone compound 150 is inserted into the inside thereof.

In the conductive silicon compound 150, after the elastic member 140 is inserted into the contactor 100 through the process of FIG. 4 and attached between the plates 110, 120, and 130, the upper hole 111 or the lower hole ( 131 is injected and formed by vacuum injection or screen printing.

The conductive silicon compound 150 has a form in which fine balls made of a conductive metal material such as gold (Au) and silver (Ag) are dispersed in a silicon substrate, and are formed in the holes 111, 121, and 131 as described above. After being injected, it is solidified by a curing process. The conductive silicon compound 150 includes a silane coupling agent.

At this time, a silicon pretreatment agent is formed between the conductive silicon compound 150 and the plating films 112, 122, and 132 in the holes 111, 121, and 131 and between the conductive silicon compound 150 and the inner surface of the elastic member 140. Is located. The silicon pretreatment is surface-treated on at least one surface of the plating films 112, 122, and 132 and the conductive silicon compound 150 and then dried and cured.

The conductive metal balls in the conductive silicon compound 150 may form a magnetic field vertically and vertically so as to be in contact with each other in the longitudinal direction or to be spaced apart at minute intervals in the longitudinal direction. You can also take

Thus, when the contactor 100 is pressed by contact by the upper semiconductor element 10 and the lower test socket board 20, the conductive silicon compound 150 may be formed of the above-described plating films 112, 122, and 132. Together with the member 140, the ball lead 11 and the contact pad 21 are electrically energized.

Meanwhile, the plating films 112, 122, and 132 formed on the inner wall surfaces of the holes 111, 121, and 131 of the plates 110, 120, and 130 each contain a conductive metal, and particularly, as described above, copper (Cu), Nickel (Ni) and gold (Au) may have a multi-layered structure in which the layers are sequentially stacked.

The formation of such a multi-layered structure can be achieved by the sequential performance of the above-described electroless chemical copper plating process and post-exposure of the photosensitive film, development, electrocopper plating, corrosion process, electroless nickel plating and electroless gold plating. have. The electroless nickel plating is necessary as a process for mediating the performance of the electroless gold plating because gold cannot be plated directly on the copper thin film.

FIG. 2 is a plan view illustrating the semiconductor device test contactor 100 described above, in which a middle plate (not shown) and an upper plate 110 are sequentially stacked on the lower plate 130.

As described above, a plurality of plating circuits 113 are arranged in the upper plate 110, and a conductive silicon compound 150 is formed in the inner hole h of each plating circuit 113.

Meanwhile, the holes 111, 121, 131 and the plating circuits 113, 123, and 133 of the upper, middle, and lower plates 110, 120, and 130 of the semiconductor device test contactor 100 may have circular cross sections, respectively. However, the present invention is not limited thereto and may have a cross-sectional shape of a square cross section or other polygon.

The structure of the contactor 100 according to the first embodiment has been described and some manufacturing methods have been described above. Hereinafter, the method of manufacturing the contactor 100 according to the first embodiment will be described in more detail with reference to the silane coupling agent and the silicon pretreatment agent mentioned above.

First, the silane coupling agent in the conductive silicon compound 150 will be described.

The silane coupling agent is a substance having an organic functional group and a hydrolyzable group at the same time. The organic functional group has an affinity with an organic material such as an organic polymer, and the hydrolyzable group is hydrolyzed to have an affinity with an inorganic material. Therefore, the use of a silane coupling agent can enhance the bond between organic and inorganic materials.

On the other hand, the silanol groups generated by hydrolysis of the hydrolyzable group are bonded to each other to form a siloxane bond, and the siloxane bond may also enhance the bond between organic matters or inorganic matter.

The silane coupling agent of the conductive silicon compound 150 strengthens the bond between the organic resin silicone resin and the inorganic conductive particles.

Epoxy-alkoxy silane can be used as a silane coupling agent, It can represent with a following formula.

Equation 1

Here, Y ₁ represents a functional group having an epoxy group, n is an integer between 0 and 5, R ₁ may be any one of -CH ₃ , -C ₂ H ₅ , COCH ₃ .

In particular, the epoxy-alkoxy silane may be 3-glycidoxyoxytrimethoxysilane.

The epoxy-alkoxy silane may be coated on the conductive metal particles and then mixed with the silicone resin, or coated on the conductive metal particles and mixed and dispersed in each of the silicone resins. Alternatively, the epoxy-alkoxy silane may be mixed with the silicone resin and the conductive metal particles at the same time. Epoxy-alkoxy silanes may also be used in coatings in admixture with organic solvents such as toluene.

The silicone resin used for the conductive silicone compound 150 is not particularly limited, and a known silicone resin can be used.

Epoxy-alkoxy silane strengthens the bond between the silicone resin (RESIN) and the conductive metal particles (M) through the following process. Hereinafter, the epoxy-alkoxy silane is coated on the conductive metal particles and then mixed with the silicone resin as an example. However, those skilled in the art will readily understand the bond strengthening in the following description.

First, as shown in Formula 2, the epoxy-alkoxy silane forms a silanol group as the alkoxy group is hydrolyzed. This process can be facilitated by separately added acids.

Equation 2

Next, the silanol group of an epoxy-alkoxy silane couple | bonds with the hydroxyl of electroconductive metal particle like Formula 3, and forms a siloxane bond.

Expression 3

Thereafter, as shown in Equation 4, it is combined with an epoxy group having an affinity with an organic material and a silicone resin. As a result, the epoxy-alkoxy silane has an epoxy group bonded to an organic material (silicone resin), and the hydrolyzed alkoxy group is bonded to an inorganic material (conductive metal particles). As a result, the conductive metal particles are more strongly bonded to the silicone resin.

Equation 4

Since the conductive metal particles are strongly bonded to the silicone resin, the conductive metal particles do not escape from the conductive silicon compound 150 even during repeated tests. This increases the life of the product and improves test stability.

Next, a) between the second cylinder portion 143 and the plating film 122, b) between the upper silicon layers 114 and 124 and the lower silicon layers 125 and 134, c) the conductive silicon compound 150 and Plated Films 112, 122, and 132 in the Holes 111, 121, and 131 d) A silicon pretreatment agent exists between the conductive silicon compound 150 and the inner surface of the elastic member 140 to enhance adhesion. The bonding structure of the semiconductor device test contactor 100 is strengthened by the enhanced adhesive force, and thus a stable test can be performed.

Silicone pretreatment for enhancing adhesion includes allyl-alkoxy silane, and may further include tetrabutyl titanate. The silicon pretreatment in the manufacturing process may further include an organic solvent, for example, heptan.

The silicone pretreatment used in the preparation may include 7 to 13% by weight of allyl-alkoxy silane, 5 to 10% by weight of tetrabutyl titanate, 50% to 70% of heptane, and the rest of the balance.

The allyl-alkoxy silane can be expressed by the following formula (5).

Equation 5

Here, Y ₂ represents a functional group including an allyl group, n is an integer between 0 and 5, R ₂ may be any one of -CH ₃ , -C ₂ H ₅ , COCH ₃ .

Specifically, the allyl-alkoxy silane may be allyltrimethoxysilane.

Allyl-alkoxy silanes can enhance the bonds between organic-free, organic-inorganic (metal), inorganic (metal) -inorganic (metal).

The action of allyl-alkoxy silane between organic (RESIN1) -organic (RESIN2) can be described by the following formula.

Equation 6

In the state where the alkoxy group of the allyl-alkoxy silane is hydrated to become a hydroxy group, an allyl group having an affinity with an organic substance is bonded to the organic substance, and terminal silanol groups are bonded to each other to form a siloxane bond between allyl-alkoxy silanes. As a result, the bond between the organic substances is strengthened.

On the other hand, an acid component may be added to the silicone pretreatment agent for hydration of the alkoxy group of allyl-alkoxy silane.

The action of the allyl-alkoxy silane between the inorganic (M) -organic (RESIN) can be explained by the following equation.

Equation 7

In the state where the alkoxy group of the allyl-alkoxy silane is hydrated to become a silanol group, the allyl group having an affinity with an organic substance is bonded to the organic substance, and the terminal silanol group is a hydroxy group and an siloxane bond of the inorganic substance. In this way, the allyl-alkoxy silane strengthens the bond between the organic material and the inorganic material.

The action of the allyl-alkoxy silane between the inorganic (M1) -inorganic (M2) can be explained by the following formula (8).

Equation 8

In the state where the alkoxy group of the allyl-alkoxy silane is hydrated to become a hydroxy group, the silanol groups are each bonded to the hydroxyl group of the inorganic substance, and the silanol groups are bonded to each other to form a siloxane bond between the allyl-alkoxy silanes. This strengthens the bond between the inorganic materials.

In the foregoing description, a) an inorganic-inorganic bond between the elastic member 140 and the plating films 112, 122, and 132, b) the upper silicon layers 114 and 124 and the lower silicon layers 125 and 134. Between organic-organic matter c) between the conductive silicon compound 150 and the plating films 112, 122, and 132 in the holes 111, 121, and 131 between the organic-inorganic matter d) the conductive silicon compound 150 and The inner surface of the elastic member 140 corresponds to the organic-inorganic bond.

These bonds are strengthened in accordance with the description with reference to Equations 6 to 8 to stabilize the contactor 100 for testing semiconductor devices.

Meanwhile, in the above embodiments, whether each component is organic or inorganic may be changed. For example, the surface of each substrate 110, 120, 130 may be an organic material, wherein the second cylinder 143 is in contact with the middle plate 120, which is an organic material, wherein the bonding is inorganic-organic bonding to be. In this case, the allyl-alkoxy silane strengthens the bond between the second cylinder 143 and the middle plate 120 as described in Eq.

In the following examples, repetitive descriptions are omitted, and briefly mentioned are mainly focused on the difference between the first embodiment and the action of the silane coupling agent and the pretreatment agent in each embodiment.

Hereinafter, the present invention will be described through other examples. In the first embodiment and the following embodiments, reference numbers indicating the same configuration are differently represented only in the first digit. That is, throughout the embodiments, 110, 210, 310, 410, ..., etc. all represent the top plate. In addition, in the following embodiment, the description of the same configuration as the first embodiment may be omitted.

5 is a side cross-sectional view illustrating a semiconductor device test contactor 200 according to a second embodiment of the present invention.

In the second embodiment, unlike the first embodiment, the conductive silicon compound is not used, and the inside of the elastic member 240 is empty.

In the second embodiment, a) a silicon pretreatment agent is positioned between the elastic member 240 and the plating films 212, 222, 232 b) between the upper silicon layers 214, 224 and the lower silicon layers 225, 234. To strengthen the bond.

According to the second embodiment, the manufacturing process is simplified because no conductive silicon compound is used.

6 is a side cross-sectional view illustrating a semiconductor device test contactor 300 according to a third embodiment of the present invention.

Unlike the first embodiment, the conductive silicon compounds 350a, 350b, and 350c are separated from each other in the holes 311, 321, and 331. The conductive silicon compounds 350a, 350b, and 350c may be formed in the respective holes 311, 321, and 331 with the plates 310, 320, and 330 separated from each other, and the conductive silicon compounds 350a, 350b, and 350c may be formed. The plates 310, 320, and 330 are coupled in the state where the 350c is formed. Unlike the first embodiment, no elastic member is used.

In the third embodiment, a) between the top silicon layers 314 and 324 and the bottom silicon layers 325 and 334 b) within the conductive silicon compounds 350a, 350b and 350c and the holes 311, 321 and 331. A silicon pretreatment agent is positioned between the plating films 312, 322, and 332 to strengthen the bond.

In addition, a silane coupling agent is used for the conductive silicon compounds 350a, 350b, and 350c to strengthen the bond between the silicone resin and the conductive metal particles.

7 is a side cross-sectional view illustrating a semiconductor device test contactor 400 according to a fourth embodiment of the present invention.

Unlike the first embodiment, neither the elastic member nor the conductive silicon compound is used.

In the fourth embodiment, a silicon pretreatment agent is positioned between the upper silicon layers 414 and 424 and the lower silicon layers 425 and 434 to strengthen the bond.

8 is a side cross-sectional view illustrating a semiconductor device test contactor 500 according to a fifth embodiment of the present invention.

In the fifth embodiment, the plating circuits 513, 523, and 533 do not have portions extending into the holes 511, 521, and 531. In addition, the upper and lower plating circuits 513, 523, 533 are in contact with each other.

The position and role of the silicon pretreatment agent in the fifth embodiment and the use and role of the silane coupling agent in the conductive silicon compound 550 are the same as in the first embodiment.

9 is a side cross-sectional view illustrating a semiconductor device test contactor 600 according to a sixth embodiment of the present invention.

In the sixth embodiment, the plating circuits 613, 623, and 633 do not have portions extending into the holes 611, 621, and 631. In addition, the upper and lower plating circuits 613, 623, and 633 contact each other. In addition, no conductive silicon compound is used.

In the sixth embodiment, a) a silicon pretreatment agent is positioned between the elastic member 640 and the plating films 612, 622, 632 b) between the upper silicon layers 614, 624 and the lower silicon layers 625, 634. To strengthen the bond.

10 is a side cross-sectional view illustrating a semiconductor device test contactor 700 according to a seventh embodiment of the present invention.

In the seventh embodiment, the upper and lower plating circuits 713, 723, and 733 contact each other, and no elastic member is used.

In the seventh embodiment a) plating between the upper silicon layers 714 and 724 and the lower silicon layers 725 and 734 b) the conductive silicon compounds 750a, 750b and 750c and the holes 711, 721 and 731 A silicon pretreatment agent is positioned between the membranes 712, 722, 732 to strengthen the bond.

In addition, a silane coupling agent is used in the conductive silicon compound 750 to strengthen the bond between the silicone resin and the conductive metal particles.

11 is a side cross-sectional view illustrating a semiconductor device test contactor 800 according to an eighth embodiment of the present invention.

Unlike the first embodiment, neither the elastic member nor the conductive silicon compound is used, and the upper and lower plating circuits 813, 823, and 833 contact each other.

In the eighth embodiment, a silicon pretreatment agent is positioned between the upper silicon layers 814 and 824 and the lower silicon layers 825 and 834 to strengthen the bond.

The semiconductor device test contactor described above is merely described to help the understanding of the present invention and should not be understood as limiting the technical scope or the scope of the present invention.

The scope of the invention to the technical scope is defined by the claims and equivalents described below. Meanwhile, a component in the claims to be described later also includes a layer coated on the component. For example, the substrate may also include a plated film formed on the surface, although not mentioned in the claims.

1 is a side cross-sectional view showing a state of use of a semiconductor device test contactor according to a first embodiment of the present invention;

2 is a plan view of the semiconductor device test contactor of FIG.

3 is a perspective view illustrating an elastic member of the contactor for testing a semiconductor device of FIG. 1;

4 is a partially exploded cross-sectional view for explaining a process of fastening the elastic member of FIG.

5 is a side cross-sectional view of a semiconductor device test contactor according to a second embodiment of the present invention;

6 is a side cross-sectional view of a semiconductor device test contactor according to a third embodiment of the present invention;

7 is a side cross-sectional view of a semiconductor device test contactor according to a fourth embodiment of the present invention;

8 is a side cross-sectional view of a semiconductor device test contactor according to a fifth embodiment of the present invention;

9 is a side cross-sectional view of a semiconductor device test contactor according to a sixth embodiment of the present invention;

10 is a side cross-sectional view of a semiconductor device test contactor according to a seventh embodiment of the present invention;

11 is a side cross-sectional view of a semiconductor device test contactor according to an eighth embodiment of the present invention.

     <Explanation of symbols for the main parts of the drawings>

10: semiconductor element 11: ball lead

20: test socket board 21: contact pad

100: contactor 110 for semiconductor device test: top plate

111, 121, 131: holes 112, 122, 132: plating film

113, 123, 133: Plating circuit 114, 124, 134: Silicon layer

120: middle plate 130: lower plate

140: elastic member 141: first cylinder portion

142: first spring portion 143: second cylinder portion

144: second spring portion 145: third cylinder portion

150: conductive silicon compound

Claims (9)

In the manufacturing method of the contactor (Contactor), Providing a substrate through which holes are formed; Applying a silicone pretreatment agent comprising allyl-alkoxy silane to the surface of the hole; Providing a conductive silicon compound comprising a silicone resin and conductive metal particles; A method of manufacturing a contactor comprising inserting the conductive silicon compound into the hole to make direct contact with the silicon pretreatment agent. The allyl-alkoxy silane coupling agent is a method for producing a contactor represented by the following formula.

Here, Y ₂ represents a functional group having an allyl group, n is an integer between 0 and 5, R ₂ may be any one of -CH ₃ , -C ₂ H ₅ , COCH ₃ . delete The method of claim 1, And the allyl-alkoxy silane coupling agent comprises allyltrimethoxysilane. The method of claim 1, The silicon pretreatment agent further comprises heptane and tetrabutyl titanate. In the contactor, A middle plate on which upper and lower silicon layers are stacked and formed with a plurality of central holes; An upper plate formed on the upper surface of the middle plate and having a plurality of upper holes formed to correspond to the plurality of central holes; A lower plate stacked on a bottom surface of the middle plate and having a plurality of lower holes formed to correspond to the plurality of central holes; And Conductive silicon compound is formed in the center hole, the upper hole and the lower hole (compound), And each of the plates and the conductive silicon compound are bonded by allyltrimethoxysilane. In the contactor, A middle plate on which upper and lower silicon layers are stacked and formed with a plurality of central holes; An upper plate formed on the upper surface of the middle plate and having a plurality of upper holes formed to correspond to the plurality of central holes; A lower plate stacked on a bottom surface of the middle plate and having a plurality of lower holes formed to correspond to the plurality of central holes; And Conductive silicon compound is formed in the center hole, the upper hole and the lower hole (compound), And a silicon layer of the middle plate and the upper plate are bonded by allyltrimethoxysilane. In the contactor, A CCL (Copper Clad Laminate) having a plurality of central holes penetrated therein is formed with a first plating film containing a conductive metal on the inner wall of each central hole, and extends from the first plating film to a predetermined width around the top and bottom of each central hole. A middle plate on which a first plating circuit is formed; A plurality of upper holes are formed through the CCL to be stacked on the upper surface of the middle plate so as to correspond to the plurality of central holes, and a second plating film containing a conductive metal is formed on the inner wall of each upper hole, and the second plating film is formed. An upper plate having a second plating circuit extending from the upper and lower ends of each upper hole by a predetermined width from the upper surface; A plurality of lower holes are formed through the rigid CCL to be stacked on the lower surface of the middle plate so as to correspond to the plurality of central holes, and a third plating film containing a conductive metal is formed on the inner wall of each lower hole. A lower plate having a third plating circuit extending from the film around the top and bottom of each lower hole with a predetermined width; And Conductive silicon compound is formed in the center hole, the upper hole and the lower hole (compound), And each of the plates and the conductive silicon compound are bonded by allyltrimethoxysilane. The method of claim 7, wherein It further comprises an elastic member which is inserted and supported in common to each of the central hole, the upper hole and the lower hole, And the conductive silicon compound is located within the elastic member. The method of claim 8, And the conductive silicon compound and the elastic member are joined by allyl trimethoxysilane.

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