KR100979174B1 - Multi-chip package and manufacturing method thereof - Google Patents

Abstract

The present invention provides a multi-chip package and a method of manufacturing the same, which aim to improve light efficiency by reducing light loss and to simplify manufacturing. One example of the presented multichip package includes a substrate having a plurality of electrodes on which a plurality of light emitting device chips are mounted; And a white reflective layer formed on a region other than the region in which the plurality of light emitting device chips are mounted on the upper surface of the substrate. By using a white silicone epoxy resin with low light absorption and good reflectance to form a reflective layer on the bottom of the substrate cavity, the inner wall and the bottom of the cavity, it is possible to sufficiently replace the existing reflector plate and lose light to the substrate. It prevents the increase of the light efficiency.

Description

Multi-chip package and manufacturing method thereof

The present invention relates to a multichip package and a method for manufacturing the same, and more particularly, to a package on which a plurality of LED chips are mounted and a method on which a plurality of LED chips are mounted.

A light emitting diode (hereinafter, referred to as an LED) is a semiconductor device capable of realizing various colors by forming a light emitting source by changing compound semiconductor materials such as GaAs, AlGaAs, GaN, InGaN, and AlGaInP. Say. At present, many such semiconductor devices have been adopted in the form of packages in electronic components.

The LED package in which the light emitting diode is adopted in the form of a chip is illustrated in FIG. 1.

The LED package 10 according to the related art example includes a lower substrate 14 having conductive pattern electrodes 18 and 20 formed around a region in which the LED chip 12 is mounted and the LED chip 12 is mounted; And an upper substrate 16 formed on the lower substrate 14 and having a cavity 26 formed in an area corresponding to an area where the LED chip 12 is mounted, and a reflecting plate 24 formed on an inner wall of the cavity 26. ). The LED chip 12 is connected to the conductive pattern electrodes 18 and 20 by a wire 22. Here, it is assumed that the lower substrate 14 and the upper substrate 16 are ceramic substrates.

In the case of FIG. 1, the reflective plate 24 is formed by printing or dipping a conductive material on the inner inclined surface of the cavity 26 using a conductive paste such as Ag to form a conductive layer. Ag plating is usually performed on the conductive layer, which is the reflecting plate 24, to increase the light reflection efficiency. The lower end of the reflecting plate 24 is spaced apart from the conductive pattern electrodes (anode electrode and cathode electrode) 18, 20 by a predetermined value. This is for electrically insulating the reflecting plate 24 and the conductive pattern electrodes 18 and 20.

Although the LED package 10 configured as shown in FIG. 1 may easily adjust brightness and angular distribution due to the reflector 24, the LED may be separated from the reflector 24 and the conductive pattern electrodes 18 and 20. It is impossible to prevent the light of the chip 12 from escaping at the source. This causes a problem that the light emitted from the LED chip 12 is lost to some extent. Of course, the distance between the lower end of the reflector 24 and the conductive pattern electrodes 18 and 20 may be reduced to reduce the amount of light loss. However, when the spacing value is reduced, the electrode material of the lower substrate 14 diffuses toward the upper substrate 16 during firing, and comes into contact with the reflecting plate 24 to increase the defect occurrence rate due to short.

In particular, since a multi-chip package employing a plurality of LED chips 12 is a structure in which a plurality of LED chips are integrated, the amount of light loss is greater than that of an LED package employing a single chip. Accordingly, there is a problem that the light efficiency is lowered even in the multi-chip package. In addition, when the spacing between the electrode and the bottom of the reflector is reduced, the failure rate due to the short between the electrode and the reflector is increased in the multichip package.

On the other hand, instead of the method of applying the plating technique to the cavity 26 of FIG. 1, there is also a method of attaching a thin metal reflecting plate (not shown).

In the case of attaching the metal reflector, the reflectance can be increased by using the metal reflector. However, a separate process of separately manufacturing the metal reflector is required. And, since the manufactured metal reflector plate must be installed in the cavity 26 by hand one by one, it takes a lot of time.

In addition, in order for the metal reflector to properly maintain the position in the cavity, it is necessary to use an adhesive member other than the locking jaw. If the adhesive member is used incorrectly, partial separation between the upper substrate 16 and the metal reflector may occur. This makes it impossible to obtain the desired light directivity angle properly.

As described above, even when the metal reflector is used in the multi-chip package, the bottom of the metal reflector and the conductive pattern electrodes 18 and 20 should be spaced apart from each other, so that the plating technique may be applied to the cavity 26 described above. Not only do you have the problem, but there is a problem that the package manufacturing process becomes complicated.

The present invention has been proposed to solve the above-described problems, and an object thereof is to provide a multichip package and a method of manufacturing the same, which are intended to reduce the amount of light loss and to improve the light efficiency and to simplify manufacturing.

In order to achieve the above object, a multi-chip package according to a preferred embodiment of the present invention, a substrate having a plurality of electrodes on which a plurality of light emitting device chips are mounted; And a white reflective layer formed on a region other than the region in which the plurality of light emitting device chips are mounted on the upper surface of the substrate.

The reflective layer is formed flat.

The reflective layer is formed to expose the top surfaces of the plurality of electrodes and to contact the edges of the plurality of electrodes.

The area in which the plurality of light emitting device chips are mounted is an area actually occupied by the mounted light emitting device chip among the top surfaces of the respective electrodes, and the reflective layer is formed except the area actually occupied by the light emitting device chips mounted on the top surface of the plurality of electrodes. do.

It may further include a separate substrate having a cavity surrounding an area in which a plurality of light emitting chip is mounted.

According to another aspect of the present invention, there is provided a multichip package, including: a substrate on which a cavity is formed and a plurality of electrodes on which a plurality of light emitting device chips are mounted on a bottom of the cavity; And a white reflective layer formed in the cavity to cover the inner wall and the bottom of the cavity, wherein the top surface of the plurality of electrodes is exposed and is in contact with the edges of the plurality of electrodes.

The reflective layer is rounded inwardly.

In the multichip package of the above-described embodiments of the present invention, the reflective layer comprises a white silicone epoxy resin. The reflective layer comprises at least one of TiO ₂ , ZnO, lithopone, ZnS, BaSO ₄ , SiO ₂ , PTFE (polytetrafluoroethylene). The reflective layer includes at least one of TiO ₂ , ZnO, lithopone, ZnS, BaSO ₄ , SiO ₂ , and PTFE (polytetrafluoroethylene) as a main material, and the main material is added at 5 to 60 wt%. As the reflective layer, a component material containing 5 to 30 wt% of silicone resin and 20 to 65 wt% of epoxy resin is used together with the main material.

A method of manufacturing a multichip package according to an embodiment of the present invention includes: a substrate preparation step of preparing a substrate on which a plurality of electrodes on which a plurality of light emitting device chips are mounted is formed; And a reflective layer forming step of forming a white reflective layer in a region other than a region in which a plurality of light emitting device chips are mounted on an upper surface of the substrate.

The reflective layer forming step forms the reflective layer flat.

The reflective layer forming step forms the reflective layer to expose the top surfaces of the plurality of electrodes and to contact the edges of the plurality of electrodes.

The area in which the plurality of light emitting device chips are mounted is an area actually occupied by the mounted light emitting device chip among the upper surfaces of the respective electrodes, and in the forming of the reflective layer, the area in which the light emitting device chips mounted on the upper surface of the plurality of electrodes is actually occupied. Form except.

The method may further include forming a separate substrate on the upper portion of the substrate having a cavity surrounding an area in which a plurality of light emitting device chips are mounted.

According to another aspect of the present invention, there is provided a method of manufacturing a multichip package, comprising: a substrate preparation step of preparing a substrate having a plurality of electrodes on which a plurality of light emitting device chips are mounted on a bottom of a cavity; And forming a white reflective layer in the cavity to cover the inner wall and the bottom of the cavity, exposing a top surface of the plurality of electrodes and forming a white reflective layer to contact the edges of the plurality of electrodes.

The reflective layer forming step causes the reflective layer to round inwardly.

In the reflective layer forming step, the reflective layer may be formed before or after mounting the plurality of light emitting device chips on the plurality of electrodes of the substrate.

In the method for manufacturing a multichip package of the above-described embodiments of the present invention, the reflective layer in the reflective layer forming step comprises a white silicone epoxy resin. The reflective layer of the reflective layer forming step includes at least one of TiO ₂ , ZnO, lithopone, ZnS, BaSO ₄ , SiO ₂ , and PTFE (polytetrafluoroethylene). The reflective layer may include at least one of TiO ₂ , ZnO, lithopone, ZnS, BaSO ₄ , SiO ₂ , and PTFE (polytetrafluoroethylene) as a main material, and adds 5 to 60 wt% of the main material. . The reflective layer in the reflective layer forming step uses a component material having a silicone resin of 5 to 30 wt% and an epoxy resin of 20 to 65 wt% together with the main material.

According to the present invention having such a configuration, by using a white silicone epoxy resin having low light absorption and good reflectance, a reflective layer is formed on the bottom surface of the cavity of the substrate, the inner wall and the bottom of the cavity, thereby sufficiently replacing the existing reflector. In addition to preventing the loss of light to the substrate to increase the light efficiency.

In addition, since the reflective layer formed on the substrate is insulative, it is not necessary to consider the spaced distance between the electrode and the reflecting plate as before. This not only greatly simplifies the manufacturing process, but also shortens the defect between the electrode and the reflector, thereby reducing the product defect rate.

In the case of the embodiment in which the surface of the plurality of light emitting device chips is mounted on the substrate to be covered with a white silicon epoxy resin with low light absorption and good reflectivity, the manufacturing process of the reflector plate (including the metal reflector plate) in the existing multichip package is performed. Compared to this, it is very easy to make a reflector. In addition, the light loss is significantly reduced compared to the existing multichip package, thereby improving the light efficiency.

In addition, the inner wall and the bottom of the cavity (except the electrode) are covered with a white silicon epoxy resin having low light absorption and good reflectivity in a substrate having a cavity in which a plurality of light emitting device chips are formed, and are inwardly rounded. In the case of the covering embodiment, there is no need for a conventional reflector. In this case, almost all of the light emitted from the plurality of light emitting device chips is reflected, so that the loss of light is significantly reduced compared to the previous embodiment and the conventional multichip package, thereby maximizing the light efficiency.

Hereinafter, a multichip package and a method of manufacturing the same according to the present invention will be described with reference to the accompanying drawings. In the following description, the multichip package is applicable to all SMD type packages such as ceramic package, plastic package, lead frame type package, and plastic + lead frame type package.

2 is a view for explaining the configuration and manufacturing process of the multi-chip package according to the first embodiment of the present invention.

As shown in FIG. 2A, a substrate 30 is prepared and a plurality of electrodes 32 (32a, 32b, 32c) are formed on the prepared substrate 30. Here, the number of electrodes is three, but the number of electrodes is sufficient if two or more. The substrate 30 may be any substrate as long as it can mount a plurality of light emitting device chips 36 (36a, 36b, 36c) at high density. For example, alumina, quartz, calcium zirconate, forsterite, SiC, graphite, fusedsilica, mullite, cordierite, zirconia (zirconia), beryllia, aluminum nitride, low temperature co-fired ceramic (LTCC), high temperature co-fired ceramic (HTCC), plastics, metals, varistors, and the like. In particular, ZnO series varistors have high thermal conductivity. The production of ZnO-based varistor material not only functions as a varistor, but also allows the LED package to be rapidly cooled due to the high thermal conductivity of the varistor itself. When the substrate 30 is made of plastic, since the plastic is weak to heat, deformation of the substrate 30 may occur when the substrate 30 is used for a long time, thereby reducing product efficiency. However, in FIG. 2, the reflective layer 34 covers the upper surface of the substrate 30 (ie, the region excluding the electrode), thereby minimizing the portion where the light of the light emitting element 36 directly contacts the substrate 30. As a result, the problem caused by the heat generated by the light of the light emitting device 36 is eliminated. That is, in FIG. 2, even when the substrate 30 is made of plastic, compared to the existing structure, the efficiency reduction due to heat generation due to long time use is eliminated.

Then, as shown in FIG. 2B, the white reflective layer 34 is flattened on the remaining area except for the area where the plurality of light emitting device chips 36a, 36b, and 36c are mounted on the upper surface of the substrate 30. Form. Here, the number of chips of the light emitting device is three, which is equal to the number of electrodes. That is, the number of electrodes formed on the substrate 30 and the number of light emitting device chips are the same. The region in which the plurality of light emitting device chips 36a, 36b, and 36c are mounted may mean the entire upper surface of the corresponding electrodes 32a, 32b, and 32c, and the upper surface of each of the electrodes 32a, 32b, and 32c. It may mean a region actually occupied by the light emitting device chips 36a, 36b, and 36c. In the former case, the upper surface of the plurality of electrodes 32a, 32b, and 32c is exposed when the reflective layer 34 is formed, and the upper surface of the plurality of electrodes 32a, 32b and 32c is formed to be in contact with the edges of the plurality of electrodes 32a, 32b and 32c. The latter case is for forming the reflective layer 34 except for the area actually occupied by the light emitting device chips 36a, 36b, and 36c in the upper surface of the plurality of electrodes 32a, 32b, and 32c. In FIG. 2, the drawings corresponding to the former case are provided, but it may be better to meet the latter case in terms of light efficiency. As a method of forming the reflective layer 34, a screen printing method using a mask, a spray method using a mask, a sputtering method using a sputtering apparatus, or the like is used. In the sputtering method, since the sputtering equipment can recognize the formation positions of the plurality of electrodes 32a, 32b, and 32c, the material of the reflective layer 34 is transferred to the substrate 30, leaving only the patterns of the plurality of electrodes 32a, 32b, and 32c. Is sputtered on the X-ray, eliminating the need to use a mask. For example, a white silicone epoxy resin (see Table 1 below) having a reflectance of 90% or more is used as the material of the reflective layer 34. The white silicone epoxy resin used as the material of the reflective layer 34 has thermosetting properties.

Table 1

material

content
Titanium dioxide,
Zinc Oxide,
Lithopone (BaSO ₂ + ZnS)
ZnS,
BaSO ₄ ,
SiO ₂ ,
PTFE (polytetrafluoroethylene)




5 to 60 wt%
Silicone Resin

5 to 30% by weight
Additives such as solvents, etc.,
Epoxy resin etc

20 to 65 wt%

In Table 1, TiO ₂ , ZnO, lithopone, ZnS, BaSO ₄ , PTFE (polytetrafluoroethylene) and the like were used to implement white color. Of course, in Table 1, TiO ₂ , ZnO, lithopone, ZnS, BaSO ₄ , PTFE (polytetrafluoroethylene), etc. were used to implement white color. Other materials may be used instead of ZnS, BaSO ₄ , PTFE (polytetrafluoroethylene), for example. Silicone resins and epoxy resins were used for the viscosity and tack. In Table 1, TiO ₂ , ZnO, lithopone, ZnS, BaSO ₄ , SiO ₂ , PTFE (polytetrafluoroethylene) and the like are the main materials for whitening, and silicone resins, epoxy resins, and the like are materials. . In Table 1, the use of TiO ₂ , ZnO, lithopone, ZnS, BaSO ₄ , SiO ₂ , PTFE (polytetrafluoroethylene) at less than 5% by weight is difficult to achieve white. When TiO ₂ , ZnO, Lithopone (Lithopone), ZnS, BaSO ₄ , SiO ₂ , and PTFE (polytetrafluoroethylene) are used in excess of 60% by weight, the amount of addition of silicone resin and epoxy resin is reduced and the desired viscosity and Hard to get adhesiveness If the silicone resin is used at less than 5% by weight, the viscosity becomes too low. When the silicone resin is used in excess of 30% by weight, the viscosity becomes too high. When the epoxy resin is used in less than 20% by weight, the adhesive strength is weakened. When the epoxy resin is used in excess of 65% by weight, the content of TiO ₂ , ZnO, lithopone, ZnS, BaSO ₄ , SiO ₂ , PTFE (polytetrafluoroethylene) or silicone resin is insufficient, resulting in white color. This makes it difficult to achieve the desired viscosity. Reflective layer 34 is made by selecting white TiO ₂ , ZnO, lithopone, ZnS, BaSO ₄ , SiO ₂ , PTFE (polytetrafluoroethylene), etc. with low light absorption and good reflectance. In addition to almost no light absorption in the light source, the light efficiency is improved by reflecting almost all light from the plurality of light emitting device chips 36a, 36b, and 36c. The reflective layer 34 is formed to a thickness of about 10 μm to 300 μm.

Thereafter, curing is performed for about 2 hours at a temperature of about 170 degrees so that the reflective layer 34, the substrate 30, and the electrodes 32a, 32b, and 32c are well coupled. By curing, the reflective layer 34 and the substrate 30 and the electrodes 32a, 32b, and 32c are firmly coupled.

As shown in FIG. 2C, the light emitting device chips 36a, 36b, and 36c are mounted on the upper surfaces of the electrodes 32a, 32b, and 32c, respectively. Although not shown in FIG. 2, the light emitting device chips 36a, 36b, and 36c may be connected by a wire bonding method, or may be connected by eutectic bonding or flip bonding. It may be. In the case of flip bonding, no wire is required. In FIG. 2, one electrode corresponds to one light emitting device chip, but the number of electrodes corresponding to one light emitting device chip is determined according to a wire bonding method, a eutectic point bonding method, and a flip bonding method. The light emitting device chips 36a, 36b, and 36c have a wavelength band of approximately 200 to 900 nm. As the light emitting device chips 36a, 36b, and 36c, a chip that emits light in an upward direction or a chip that emits light in an upward direction and a lateral direction can be used.

As shown in FIG. 2 (d), a separate substrate 38 having a cavity filled with phosphors (not shown) is made and attached to the upper portion of the substrate 30. For convenience, the substrate 30 may be referred to as a lower substrate, and the substrate 38 may be referred to as an upper substrate. In FIG. 2 (d), when the light emitted from the light emitting device chips 36a, 36b, and 36c is outputted to the outside, the efficiency is determined by the reflective layer 34 formed on the lower substrate (substrate 30 in FIG. 2). Although different, it is also dependent on the upper substrate (substrate 38 in FIG. 2) with a cavity made separately. The material of the substrate 38 may vary widely from plastic, ceramic, metal, etc., like the material of the substrate 30. Materials used as the material of the substrate 38 have different reflectances to visible light. There may be a method of Ag plating to increase the reflectance of the substrate 38. However, this method is limited in application depending on the material of the substrate 38. Therefore, the substrate 38 and the lower substrate 30 may be pasted after a process of coating and curing the material of the reflective layer 34 described above inside the cavity of the substrate 38. The reflective layer 34 is made of white silicone epoxy resin and thus has insulation. Even if the conventional reflector is formed in the cavity of the substrate 38, even if the lower end of the conventional reflector is in close contact with the upper surface of the substrate 30, there is no fear of shorting with the electrodes 32a, 32b, and 32c.

Thereafter, curing is performed for about 2 hours at a temperature of about 170 degrees so that the reflective layer 34 and the substrate 38 are well bonded. By curing, the reflective layer 34 and the substrate 38 are firmly bonded.

3 is a view for explaining the configuration and manufacturing process of the multi-chip package according to a second embodiment of the present invention. In FIG. 3, the same reference numerals are given to the same components as those in FIG. In the description of FIG. 3, parts that can be omitted based on the above description in FIG. 2 are omitted. Comparing FIG. 3 with FIG. 2, the shape of the reflective layer is different. Of course, it can be seen that there is a slight difference in the shape of the substrate 38.

As shown in FIG. 3A, after the substrate 30 is prepared and a plurality of electrodes 32 (32a, 32b, 32c) are formed on the prepared substrate 30, the substrate 38 having the cavity is formed. It is formed on the substrate 30.

Subsequently, the substrate 30, the electrodes 32a, 32b, 32c, and the substrate 38 are firmly bonded by heat treatment.

Then, as shown in FIG. 3B, the material of the reflective layer 40 is filled (dispensed) in the cavity to cover the inner wall and the bottom of the cavity of the substrate 38. At this time, the material of the reflective layer 40 is filled in the remaining region except for the region where the plurality of light emitting device chips 36a, 36b, and 36c are mounted. The reflective layer 40 is inwardly rounded. For example, a white silicone epoxy resin (see Table 1 above) having a reflectance of 90% or more is used as the material of the reflective layer 40. The white silicone epoxy resin used as the material of the reflective layer 40 has thermosetting properties. Materials and contents of the reflective layer 40 are replaced with Table 1 and the description thereof. In order to flatten the reflective layer 34 of the first embodiment of the present invention and to round the reflective layer 40 of the second embodiment of the present invention, the material may be the same but different in terms of viscosity. For example, the viscosity required for forming the reflective layer 40 of the second embodiment of the present invention is preferably higher than the viscosity required for forming the reflective layer 34 of the first embodiment of the present invention.

A method of forming the shape of the reflective layer 40 illustrated in FIG. 3B is as follows. A white epoxy or silicone-based liquid solution containing a white resin component in consideration of viscosity (eg, TiO ₂ , ZnO, lithopone, ZnS, BaSO ₄ , PTFE (polytetrafluoroethylene), etc.) Material) is dispensed around the electrode 32. As a result, the liquid substance gradually contacts the outer surface of the electrode 32 and the inner wall of the cavity while gradually spreading laterally. As a result, the liquid material becomes inwardly rounded, and as a certain time passes, the liquid material becomes a gel-like reflective layer 40. In this case, the reflective layer 40 completely covers the bottom surface of the cavity. If the viscosity and the amount of the input of the reflective layer 40 is adjusted, it is sufficiently rounded to be naturally inward by the surface tension. According to the product size, the viscosity, the amount of charge, and the like of the material constituting the reflective layer 40 should be changed. In FIG. 3, the light emitted from the light emitting device chips 36a, 36b, and 36c is filled with the substrates 30 and 38 by filling the cavity with the reflective layer 40 covering the inner wall and the bottom of the cavity of the substrate 38. ) Further minimized the area of direct contact. Accordingly, the problem caused by the heat generated by the light of the plurality of light emitting device chips 36a, 36b, and 36c is solved more reliably than in FIG. For example, in FIG. 3, even if the substrates 30 and 38 are made of plastic, a decrease in efficiency due to heat generation due to long-term use is further eliminated compared to FIG. 2. In addition, in FIG. 2, it may be necessary to form a reflecting plate in the cavity of the substrate 38 separately from the flat reflective layer 34, but in FIG. 3, this process is solved in one step. This will shorten the overall manufacturing time of the package. The amount of material of the reflective layer 40 dispensed in FIG. 3B is closely related to the circumference of the cavity of the substrate 38.

Thereafter, curing is performed for about 2 hours at a temperature of about 170 degrees so that the reflective layer 40, the electrodes 32a, 32b, 32c, and the substrates 30 and 38 are well bonded. By curing, the reflective layer 40, the electrodes 32a, 32b, 32c, and the substrates 30, 38 are firmly coupled.

Finally, wire (not shown) bonding is performed after the light emitting device chips 36a, 36b, 36c are mounted on the upper surfaces of the electrodes 32a, 32b, 32c as shown in FIG. Although not shown in FIG. 3, the light emitting device chips 36a, 36b, and 36c may be connected by a wire bonding method, or may be connected by eutectic bonding or flip bonding. It may be. Flip bonding eliminates the need for wires.

In the case of FIG. 3, since the round curvature of the reflective layer 40 can be adjusted, the desired direction angle can be easily obtained. In particular, in FIG. 2, the angle of the inclined surface of the cavity of the substrate 38 (upper substrate) must be adjusted to obtain a desired orientation angle. This requires a process that requires precise processing of the cavity of the substrate 38 (upper substrate). However, in FIG. 3, since the cavity formed perpendicular to the substrate 38 is formed vertically and the desired direction angle can be easily obtained only by adjusting the round curvature of the reflective layer 40, the process is much simpler than FIG. 2.

In addition, in FIG. 3, since only the rounded reflective layer 40 is required, the conventional reflective plate does not even need to be formed in the cavity of the substrate 38, and thus the utility value is very high.

Meanwhile, in the case of FIG. 3, the mounting of the plurality of light emitting device chips 36a, 36b, and 36c is performed after the reflective layer 40 is charged, so that a defect inspection (for example, before mounting of the light emitting device chips 36a, 36b, and 36c) is performed. It is possible to inspect whether the electrode is properly formed or whether the reflective layer 40 is properly formed. In addition, the multi-chip package of Figure 3 has the effect that it is possible to sell sufficiently even in the state except the light emitting elements (36a, 36b, 36c).

4 is a view for explaining the configuration and manufacturing process of the multi-chip package according to a third embodiment of the present invention. In FIG. 4, the same reference numerals are given to the same components as those in FIGS. 2 and 3. In the description of FIG. 4, parts that can be omitted based on the above description in FIGS. 2 and 3 will be omitted. In FIG. 4, the mounting of the plurality of light emitting device chips 36a, 36b, and 36c is performed after the reflection of the reflective layer 40 in FIG. 3. In FIG. , 36c is mounted on the upper surfaces of the electrodes 32a, 32b, and 32c, and the reflective layer 40 is then charged.

The configuration and manufacturing process of the multichip package shown in FIG. 4 is easily understood by the description of FIGS. 2 and 3 described above, and thus will be briefly described.

As shown in FIG. 4A, a substrate 30 is prepared and a plurality of electrodes 32 (32a, 32b, 32c) are formed on the prepared substrate 30 (see FIG. 2A).

Then, as shown in FIG. 4B, the light emitting device chips 36a, 36b, and 36c are mounted on the upper surfaces of the electrodes 32a, 32b, and 32c, and then wire (not shown) is bonded as necessary. do.

Finally, as shown in (c) of FIG. 4, the cavity 38 on which the cavity is formed is placed on the upper portion of the substrate 30, and then the reflective layer 40 is formed on the cavity to cover the inner wall and the bottom of the cavity of the substrate 38. Fill the material. Accordingly, as described above, the reflective layer 40 is inwardly rounded.

4 has all the effects described in the description of FIG. 3 as compared with the prior art. And even if FIG. 4 is compared with FIG. 2, the effects of the description of FIG. 3 described above are retained.

However, since the multichip package of FIG. 4 is a product of a process in which the reflective layer 40 is filled after mounting the light emitting device chips 36a, 36b, and 36c, the manufacturing process of FIG. 4 produces and sells a finished product. It can be employed in the case.

3 and 4, the reflective layer 40 is formed by a dispensing method. For example, the adjacent reflective light emitting device chips 36a, 36b, and 36c may be formed by sputtering or screen printing. 40 may be formed and the reflective layer 40 may be rounded around the cavity (that is, outside the light emitting device chips 36a, 36b, and 36c) by a dispensing method.

The present invention is not limited only to the above-described embodiments, but may be modified and modified within the scope not departing from the gist of the present invention, and the technical spirit to which such modifications and variations are applied should also be regarded as belonging to the following claims. .

1 is a cross-sectional view of an LED package with a conventional reflector.

2 is a view for explaining the configuration and manufacturing process of the multi-chip package according to the first embodiment of the present invention.

3 is a view for explaining the configuration and manufacturing process of the multi-chip package according to a second embodiment of the present invention.

4 is a view for explaining the configuration and manufacturing process of the multi-chip package according to a third embodiment of the present invention.

Description of the Related Art

30, 38: substrate 32a, 32b, 32c: electrode

34, 40: reflection layer 36a, 36b, 36c: light emitting element chip

Claims (24)

A substrate having a plurality of electrodes on which a plurality of light emitting device chips are mounted; And A white reflective layer formed on an upper surface of the substrate except for an area in which the plurality of light emitting device chips are mounted; The reflective layer is a multi-chip package, characterized in that it comprises a white silicone epoxy resin. The method according to claim 1, The reflective layer is a multi-chip package, characterized in that formed flat. The method according to claim 1, The reflective layer is a multi-chip package, characterized in that the upper surface of the plurality of electrodes exposed to contact the edges of the plurality of electrodes. The method according to claim 1, The area in which the plurality of light emitting device chips are mounted is an area actually occupied by the mounted light emitting device chips among the upper surfaces of the respective electrodes. The reflective layer is a multi-chip package, characterized in that except for the area actually occupied by the light emitting device chip mounted on the upper surface of the plurality of electrodes. The method according to any one of claims 1 to 4, And a separate substrate having a cavity surrounding an area in which the plurality of light emitting devices chips are mounted. A substrate having a cavity formed therein and having a plurality of electrodes on which a plurality of light emitting device chips are mounted; And It is formed in the cavity to cover the inner wall and the bottom of the cavity, the upper surface of the plurality of electrodes includes a white reflective layer formed to contact the edges of the plurality of electrodes, The reflective layer is a multi-chip package, characterized in that it comprises a white silicone epoxy resin. The method according to claim 6, And the reflective layer is inwardly rounded. delete The method according to claim 1 or 6, The reflective layer includes at least one of TiO ₂ , ZnO, lithopone, ZnS, BaSO ₄ , SiO ₂ , PTFE (poly tetrafluoroethylene). The method according to claim 1 or 6, The reflective layer includes at least one of TiO ₂ , ZnO, lithopone, ZnS, BaSO ₄ , SiO ₂ , and PTFE (polytetrafluoroethylene) as a main material, and the main material is added at 5 to 60 wt%. Multichip package. The method according to claim 10, The reflective layer is a multi-chip package, characterized in that the use of a component material with a silicon resin of 5 ~ 30wt% and an epoxy resin of 20 ~ 65wt% with the main material. A substrate preparation step of preparing a substrate having a plurality of electrodes on which a plurality of light emitting device chips are mounted; And A reflective layer forming step of forming a white reflective layer in a region other than a region in which the plurality of light emitting device chips are mounted on an upper surface of the substrate; The reflective layer of the reflective layer forming step comprises a white silicon epoxy resin, the manufacturing method of the multi-chip package. The method according to claim 12, The forming of the reflective layer is a method of manufacturing a multi-chip package, characterized in that to form the reflective layer flat. The method according to claim 12, The forming of the reflective layer may include forming the reflective layer to expose the top surfaces of the plurality of electrodes and to contact the edges of the plurality of electrodes. The method according to claim 12, The area in which the plurality of light emitting device chips are mounted is an area actually occupied by the mounted light emitting device chips among the upper surfaces of the respective electrodes. The forming of the reflective layer may include forming the reflective layer except for an area occupied by a light emitting device chip mounted on upper surfaces of the plurality of electrodes. The method according to any one of claims 12 to 15, And forming a separate substrate having a cavity surrounding an area in which the plurality of light emitting devices chips are mounted, on the upper portion of the substrate. A substrate preparation step of preparing a substrate on which a plurality of light emitting device chips are mounted on a bottom surface of the cavity; And Forming a white reflective layer in the cavity to cover the inner wall and the bottom of the cavity, wherein the white reflective layer is formed to expose the top surfaces of the plurality of electrodes and to contact the edges of the plurality of electrodes; and, The reflective layer of the reflective layer forming step comprises a white silicon epoxy resin, the manufacturing method of the multi-chip package. The method according to claim 17, The forming of the reflective layer is a method of manufacturing a multi-chip package, characterized in that for rounding the reflective layer inwardly. delete The method according to claim 12 or 17, The reflective layer of the reflective layer forming step is a method of manufacturing a multi-chip package, characterized in that it comprises at least one of TiO ₂ , ZnO, lithopone, ZnS, BaSO ₄ , SiO ₂ , PTFE (polytetrafluoroethylene). The method according to claim 12 or 17, The reflective layer may include at least one selected from TiO ₂ , ZnO, lithopone, ZnS, BaSO ₄ , SiO ₂ , and PTFE (polytetrafluoroethylene) as the main material, and the main material may be 5 to 60 wt%. Method for producing a multichip package, characterized in that the addition. 23. The method of claim 21, The reflective layer in the filling step of the reflective layer is a method of manufacturing a multi-chip package, characterized in that the use of a component material with a silicon resin of 5 ~ 30wt% and epoxy resin of 20 ~ 65wt% with the main material. The method according to claim 17, In the forming of the reflective layer, the reflective layer is formed before mounting a plurality of light emitting device chips on a plurality of electrodes of the substrate. The method according to claim 17, In the forming of the reflective layer, the reflective layer is formed after mounting a plurality of light emitting device chips on a plurality of electrodes of the substrate.

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