KR100977420B1 - Piezoelectric ceramic composition of high performance multi-layer ceramic actuators for low temperature sintering - Google Patents

Piezoelectric ceramic composition of high performance multi-layer ceramic actuators for low temperature sintering Download PDF

Info

Publication number
KR100977420B1
KR100977420B1 KR1020080108969A KR20080108969A KR100977420B1 KR 100977420 B1 KR100977420 B1 KR 100977420B1 KR 1020080108969 A KR1020080108969 A KR 1020080108969A KR 20080108969 A KR20080108969 A KR 20080108969A KR 100977420 B1 KR100977420 B1 KR 100977420B1
Authority
KR
South Korea
Prior art keywords
piezoelectric
weight
ceramic composition
parts
piezoelectric ceramic
Prior art date
Application number
KR1020080108969A
Other languages
Korean (ko)
Other versions
KR20100049928A (en
Inventor
김민수
정순종
김인성
송재성
전소현
Original Assignee
한국전기연구원
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 한국전기연구원 filed Critical 한국전기연구원
Priority to KR1020080108969A priority Critical patent/KR100977420B1/en
Publication of KR20100049928A publication Critical patent/KR20100049928A/en
Application granted granted Critical
Publication of KR100977420B1 publication Critical patent/KR100977420B1/en

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/80Constructional details
    • H10N30/85Piezoelectric or electrostrictive active materials
    • H10N30/853Ceramic compositions
    • H10N30/8548Lead-based oxides
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/48Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3231Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3232Titanium oxides or titanates, e.g. rutile or anatase
    • C04B2235/3234Titanates, not containing zirconia
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3231Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3244Zirconium oxides, zirconates, hafnium oxides, hafnates, or oxide-forming salts thereof
    • C04B2235/3248Zirconates or hafnates, e.g. zircon
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3281Copper oxides, cuprates or oxide-forming salts thereof, e.g. CuO or Cu2O
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3296Lead oxides, plumbates or oxide forming salts thereof, e.g. silver plumbate
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3298Bismuth oxides, bismuthates or oxide forming salts thereof, e.g. zinc bismuthate
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/44Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
    • C04B2235/442Carbonates
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74Physical characteristics
    • C04B2235/76Crystal structural characteristics, e.g. symmetry
    • C04B2235/768Perovskite structure ABO3
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Composite Materials (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

본 발명은 압전 자기 조성물에 관한 것으로서, 압전변위제어용으로 적층형 압전 액츄에이터에 사용될 수 있는 높은 전기기계결합계수(kp)와 압전상수(d33)를 갖는 압전 자기 조성물에 관한 것이다. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a piezoelectric ceramic composition, and to a piezoelectric ceramic composition having a high electromechanical coupling coefficient (k p ) and a piezoelectric constant (d 33 ) that can be used in a stacked piezoelectric actuator for piezoelectric displacement control.

본 발명의 조성물은 안정한 ABO3 구조를 갖는 0.4Pb(Mg1/3Nb2/3)O3-0.25PbZrO3-0.35PbTiO3 의 100중량부 대비, 0.05 중량부의 Li2CO3, 0.01 중량부의 Bi2O3, 1 중량부의 PbO 및 d중량부의 CuO가 첨가된 압전 자기 조성물로서, 상기 d는 0 초과 0.5이하의 범위이며, 보다 바람직하게는 상기 d는 0.3이다. The composition of the present invention is 0.05 parts by weight of Li 2 CO 3 , 0.01 parts by weight, based on 100 parts by weight of 0.4Pb (Mg 1/3 Nb 2/3 ) O 3 -0.25PbZrO 3 -0.35PbTiO 3 having a stable ABO 3 structure A piezoelectric ceramic composition to which Bi 2 O 3 , 1 part by weight of PbO and d parts by weight of CuO are added, wherein d is in a range of more than 0 and 0.5 or less, and more preferably d is 0.3.

CuO를 첨가함에 따라 전기기계결합계수(kp) 및 압전상수(d33)가 증가하는 한편 소결온도는 950 ℃로 낮출수 있었으며, 따라서 보다 값싼 은 전극을 사용할 수 있는 적층형 압전액츄에이터에 응용될 수 있는 압전 자기 조성물 및 그 제조방법을 제공한다.The addition of CuO increased the electromechanical coupling coefficient (k p ) and piezoelectric constant (d 33 ) while lowering the sintering temperature to 950 ° C. Thus, it can be applied to multilayer piezo actuators that can use cheaper silver electrodes. A piezoelectric ceramic composition and a method of manufacturing the same are provided.

압전세라믹스, 액츄에이터, 압전변위소자, 적층세라믹스, 저온소성  Piezoelectric Ceramics, Actuators, Piezoelectric Displacement Devices, Laminated Ceramics, Low Temperature Plasticity

Description

고변위 적층형 압전액츄에이터용 저온소결 압전 자기 조성물{Piezoelectric ceramic composition of high performance multi-layer ceramic actuators for low temperature sintering}Piezoelectric ceramic composition of high performance multi-layer ceramic actuators for low temperature sintering

본 발명은 고변위 적층형 압전 액츄에이터용 저온소결압전 자기 조성물에 관한 것으로서, 압전변위제어용으로 적층형 압전 액츄에이터에 사용될 수 있는 높은 전기기계결합계수(kp)와 압전상수(d33)를 갖는 압전 자기 조성물에 관한 것이다. The present invention relates to a low-temperature sintered piezoelectric ceramic composition for a high displacement stacked piezoelectric actuator, wherein the piezoelectric ceramic composition having a high electromechanical coupling coefficient (k p ) and a piezoelectric constant (d 33 ) that can be used in a stacked piezoelectric actuator for piezoelectric displacement control. It is about.

최근 정밀기계산업과 정보산업의 발달에 따라 미소변위를 제어하거나 진동을 제어하는 압전 액츄에이터가 정밀광학기기, 반도체 장비, 기체유량제어 펌프, 밸브 등에 폭넓게 응용되고 있다. 이는 종래의 기계식 구동소자에 비하여 압전 액츄에이터가 소형화 및 정밀제어가 가능하며, 응답속도가 빠른 장점이 있기 때문이다. 따라서, 메카트로닉스의 발전과 더불어 미소변위제어 부품은 종래의 스텝모터를 이용하는 방식에서 압전 액츄에이터를 이용하는 방향으로 전환될 것이다. Recently, with the development of the precision machinery industry and the information industry, piezoelectric actuators for controlling micro displacement or vibration are widely applied to precision optical devices, semiconductor equipment, gas flow control pumps, and valves. This is because the piezoelectric actuator can be miniaturized and precisely controlled, and the response speed is faster than the conventional mechanical driving device. Therefore, with the development of mechatronics, the micro displacement control component will be shifted to the direction using the piezoelectric actuator in the method using the conventional step motor.

압전세라믹스의 압전액츄에이터 응용에 있어 고변위를 발생하는 재료가 필요하다. 압전체의 변형율 S는 압전체에 인가된 전계 E와 압전상수 d33의 관계로 나타 낼수 있으며, 다음과 같은 수식(식 1)으로 표현된다. There is a need for materials that produce high displacement in piezoelectric actuator applications of piezoceramics. The strain S of the piezoelectric body can be expressed by the relationship between the electric field E applied to the piezoelectric body and the piezoelectric constant d 33 , and is expressed by the following equation (Equation 1).

Figure 112008076481817-pat00001
........... (1)
Figure 112008076481817-pat00001
........... (One)

즉, 액츄에이터의 변위량(S)은 압전상수(d33) 및 전계(E)에 비례하므로, 압전체의 큰 변위량(S)을 얻기 위해서는 높은 압전상수(d33) 및 전계(E)가 요구된다. 또한, 변위량(S)은 압전재료의 두께에 비례하고, 큰 변위량(S)을 얻기 위한 압전재료 두께증가는 높은 인가전압(E)이 요구된다. 이는 소형화 및 정밀제어 시스템 회로 구성상 바람직하지 않다. That is, the amount of displacement (S) of the actuator is proportional to the piezoelectric constant (d 33) and electric field (E), a high piezoelectric constant (d 33) and electric field (E) is required in order to obtain a large displacement amount (S) of the piezoelectric body. In addition, the displacement amount S is proportional to the thickness of the piezoelectric material, and the increase in piezoelectric material thickness for obtaining a large displacement amount S requires a high applied voltage E. This is undesirable in terms of miniaturization and precision control system circuit construction.

따라서, 소비전력 및 발열량이 적고 응답성도 양호함과 동시에 적층수에 따라 변형량을 조절할 수 있으며, 높은 발생력도 가능한 장점을 가진 적층형 압전액츄에이터가 요구된다. Accordingly, there is a need for a multilayer piezoelectric actuator having advantages of low power consumption and heat generation, good response, adjustable deformation according to the number of stacked layers, and high generation force.

압전액츄에이터의 변위특성을 높이기 위해서는 종래의 PZT 압전세라믹스 보다 높은 압전상수 d33를 갖는 소재가 필요하다. 한편, 적층형 압전액츄에이터는 세라믹스와 전극을 동시에 소성해야 한다. 따라서, 소성온도가 1200℃이상의 높은 온도가 요구되는 PZT계 압전세라믹스를 사용할 경우 내부전극(Ag/Pd) 재료로 Pd의 함량이 높은 전극재료를 사용해야한다. 즉, 내부전극 재료로 고가인 Pd함량 증가는 적층형 압전액츄에이터의 부품가격을 증가시키는 문제가 발생하게 된다. In order to increase the displacement characteristics of the piezoelectric actuator, a material having a piezoelectric constant d 33 higher than that of a conventional PZT piezoelectric ceramic is required. On the other hand, the laminated piezoelectric actuator must fire the ceramics and the electrode at the same time. Therefore, when using a PZT-based piezoceramic material having a high firing temperature of 1200 ° C. or higher, an electrode material having a high content of Pd as an internal electrode (Ag / Pd) material should be used. That is, an increase in the Pd content, which is expensive as an internal electrode material, causes a problem of increasing the part price of the multilayer piezoelectric actuator.

본 발명의 목적은 PZT 압전세라믹스의 문제점을 개선한, 압전상수가 우수하고 저온소성이 가능하여 적층형 압전액츄에이터용으로 적합한 특성을 갖는 압전세라믹스 조성물을 제공하기 위한 것이다. SUMMARY OF THE INVENTION An object of the present invention is to provide a piezoceramic composition having improved properties for PZT piezoceramic, having excellent piezoelectric constant and low temperature sintering and suitable properties for a laminated piezoelectric actuator.

본 발명의 다른 목적은 앞서 기술한 바와 같이 압전변위제어용으로 적층형 압전액츄에이터에 사용될 수 있는 높은 전기기계결합계수(kp) 및 압전상수(d33)를 갖는 압전 자기 조성물을 제공하는 것이다. Another object of the present invention is to provide a piezoelectric ceramic composition having a high electromechanical coupling coefficient (k p ) and a piezoelectric constant (d 33 ) that can be used in a stacked piezoelectric actuator for piezoelectric displacement control as described above.

본 발명에서는 종래의 Pb(Zr,Ti)O3계 압전세라믹스(이하, "PZT계 압전세라믹스"라 함)가 가지는 높은 소성온도와 낮은 압전상수의 문제점을 개선하기 위하여 PMN-PZ-PT을 합성하여, 유전율(εr) 및 전기기계결합계수(kp)의 증가와 우수한 압전상수(d33)를 얻는 압전 소자 조성물이다. In the present invention, PMN-PZ-PT is synthesized to improve the problems of high firing temperature and low piezoelectric constant of the conventional Pb (Zr, Ti) O 3 based piezoelectric ceramics (hereinafter referred to as "PZT piezoelectric ceramics"). Thus, the piezoelectric element composition obtains an increase in dielectric constant epsilon r and an electromechanical coupling coefficient k p and an excellent piezoelectric constant d 33 .

본 발명의 고변위 적층형 압전 액츄에이터용에 적합한 저온 소결 압전 자기 조성물은, 안정한 ABO3 구조를 갖는 xPb(Mg1/3Nb2/3)O3-yPbZrO3-zPbTiO3에, Li2CO3, Bi2O3, PbO, 및 CuO가 첨가된 압전 자기 조성물로서, 여기서, x는 0.35이상 0.45이하이고, y는 0.2이상 0.3이하이고, z는 1-x-y 이며, 상기 CuO는 xPb(Mg1/3Nb2/3)O3-yPbZrO3-zPbTiO3 100중량부 대비 d 중량부가 첨가되는 데, 상기 d는 0초과 0.5이하 의 범위 것을 특징으로 한다. 보다 바람직하게는 상기 d는 0.3인 것을 특징으로 한다. The low-temperature sintered piezoelectric ceramic composition suitable for the high displacement laminated piezoelectric actuator of the present invention is composed of xPb (Mg 1/3 Nb 2/3 ) O 3 -yPbZrO 3 -zPbTiO 3 having a stable ABO 3 structure, Li 2 CO 3 , A piezoelectric ceramic composition to which Bi 2 O 3 , PbO, and CuO are added, wherein x is 0.35 or more and 0.45 or less, y is 0.2 or more and 0.3 or less, z is 1-xy, and CuO is xPb (Mg 1 / 3 parts by weight based on 100 parts by weight of 3 Nb 2/3 ) O 3 -yPbZrO 3 -zPbTiO 3 is added, wherein d is in a range of 0 to 0.5 or less. More preferably, d is 0.3.

여기서, x가 0.35보다 낮거나, y가 0.3보다 높은 경우에는 저온 소결 특성을 보이지 않으며, x가 0.45보다 높거나, y가 0.2보다 낮은 경우에는 압전 특성이 현저히 저하됨으로, x와 y 값은 상기의 범위가 적당하다. Here, when x is lower than 0.35 or y is higher than 0.3, low-temperature sintering characteristics are not shown. When x is higher than 0.45 or y is lower than 0.2, the piezoelectric characteristics are significantly lowered. The range of is suitable.

바람직하게는, 상기 Li2CO3, PbO 및 Bi2O3는 xPb(Mg1/3Nb2/3)O3-yPbZrO3-zPbTiO3 100 중량부 대비 a 중량부의 Li2CO3, b중량부의 Bi2O3, c중량부의 PbO 가 각각 첨가되는 데, 상기 a는 0.02이상 0.07이하이며, 상기 b는 0.005이상 0.02이하이며, 상기 c는 0.5이상 2이하이다. Preferably, the Li 2 CO 3 , PbO and Bi 2 O 3 is a weight part of Li 2 CO 3 , b weight compared to 100 parts by weight of xPb (Mg 1/3 Nb 2/3 ) O 3 -yPbZrO 3 -zPbTiO 3 Negative Bi 2 O 3 and c parts by weight of PbO are added, respectively, wherein a is 0.02 or more and 0.07 or less, b is 0.005 or more and 0.02 or less, and c is 0.5 or more and 2 or less.

여기서, a가 0.02 보다 낮거나, b가 0.005보다 낮거나, 또는 c가 0.5가 낮은 경우에는 저온 소결 특성을 보이지 않게 되며, a가 0.07 보다 높거나, b가 0.02 보다 높거나, 또는 c가 2보다 높은 경우에는 압전 특성이 현저히 저하됨으로, a,b, c는 상기의 범위가 적당하다. Here, when a is lower than 0.02, b is lower than 0.005, or c is lower than 0.5, low temperature sintering characteristics are not exhibited, a is higher than 0.07, b is higher than 0.02, or c is 2 In the case of higher piezoelectric properties, the piezoelectric properties are significantly lowered, so the above ranges are appropriate for a, b and c.

바람직하게는, 안정한 ABO3 구조를 갖는 0.4Pb(Mg1/3Nb2/3)O3-0.25PbZrO3-0.35PbTiO3 의 100중량부 대비, 0.05 중량부의 Li2CO3, 0.01 중량부의 Bi2O3, 1 중량부의 PbO 및 d중량부의 CuO가 첨가된 압전 자기 조성물로서, 상기 d는 0 초과 0.5이하의 범위이며, 보다 바람직하게는 상기 d는 0.3이다. Preferably, 0.05 part by weight of Li 2 CO 3 , 0.01 part by weight of Bi, relative to 100 parts by weight of 0.4Pb (Mg 1/3 Nb 2/3 ) O 3 -0.25PbZrO 3 -0.35PbTiO 3 having a stable ABO 3 structure A piezoelectric ceramic composition to which 2 0 3 , 1 part by weight of PbO and d parts by weight of CuO are added, wherein d is in a range of more than 0 and 0.5 or less, and more preferably d is 0.3.

본 발명의 압전 자기 조성물은 950 ℃의 온도에서 소성이 가능하며, 우수한 압전 상수를 가진다. The piezoelectric ceramic composition of the present invention can be fired at a temperature of 950 ° C, and has an excellent piezoelectric constant.

본 발명의 압전 자기 조성물은 PZT계 압전세라믹스에 페로브스카이트 구조를 가지는 Pb(Mg1/3Nb2/3)O3(이하 PMN) 계 세라믹스를 적절한 몰비로(mole ratio) 반응시켜 압전상수 d33를 증가시키는 한편, 다양한 저온소결조제들과 함께 CuO를 첨가함으로써 소결온도를 낮추어 보다 값싼 내부전극재료를 사용할 수 있는 압전 자기 조성물이라 할 것이다. The piezoelectric ceramic composition of the present invention reacts Pb (Mg 1/3 Nb 2/3 ) O 3 (PMN) -based ceramics having a perovskite structure with an appropriate molar ratio to a PZT piezoceramic. The piezoelectric ceramic composition can be used to increase the d 33 and lower the sintering temperature by adding CuO together with various low temperature sintering aids to use cheaper internal electrode materials.

본 발명에서 얻은 압전 자기 조성물은 소결온도가 950 ℃ 이하에서도 압전특성이 우수하였으며, 적층형 압전액츄에이터, 압전변압기 및 초음파 진동자, 착화소자와 같은 고신뢰성 압전부품을 제조할 수 있다. The piezoelectric ceramic composition obtained in the present invention has excellent piezoelectric properties even at a sintering temperature of 950 ° C. or less, and can produce high reliability piezoelectric parts such as multilayer piezoelectric actuators, piezoelectric transformers, ultrasonic vibrators, and ignition elements.

더욱이 소성온도가 종래의 PZT보다 낮은 조건에서 제조가능 함으로써, 적층형 압전부품에 응용할 경우 전극의 Pd함량을 감소할 수 있고, 또한 보다 값이 저렴한 Ag 전극재료를 이용할수 있어서 경제적이며, 종래의 PZT보다 낮은 온도에서 소성함으로써 Pb의 휘발에 의한 환경오염을 감소시킬 수 있는 효과가 있다.In addition, since the firing temperature is lower than that of the conventional PZT, it is possible to reduce the Pd content of the electrode when applied to laminated piezoelectric parts, and to use Ag electrode material which is cheaper, and is more economical than the conventional PZT. Firing at low temperature has the effect of reducing environmental pollution caused by volatilization of Pb.

이하에서는, 첨부된 도면 및 본 발명과 관련된 실시예에 대해서 구체적으로 설명하기로 한다. Hereinafter, exemplary embodiments related to the accompanying drawings and the present invention will be described in detail.

도 1은 본 발명의 바람직한 실시예에 따른, 고변위 적층형 압전 액츄에이이터용 저온 소결 압전 자기 소자의 제조방법의 개략도이다. 도 1의 방식에 따라, 저온 소결 압전 자기 소자를 제조하였다. 1 is a schematic diagram of a method for manufacturing a low temperature sintered piezoelectric magnetic element for a high displacement stacked piezoelectric actuator according to a preferred embodiment of the present invention. According to the scheme of FIG. 1, a low temperature sintered piezoelectric magnetic element was manufactured.

이하, 본 발명의 실시예에서는 0.4Pb(Mg1/3Nb2/3)O3-0.25PbZrO3-0.35PbTiO3 를 기본 재료로 하여 저온 소결 압전 자기 소자를 제조하였다. Hereinafter, in the embodiment of the present invention, a low-temperature sintered piezoelectric magnetic device was manufactured using 0.4 Pb (Mg 1/3 Nb 2/3 ) O 3 -0.25PbZrO 3 -0.35PbTiO 3 as a base material.

-실시예-Example

본 발명에 따른 조성물의 제조를 위해, 우선 PbO, MgO, Nb2O5, ZrO2, TiO2 원료분말을 이용하여 0.4Pb(Mg1/3Nb2/3)O3-0.25PbZrO3-0.35PbTiO3 분말(PMN-PZ-PT 분말)을 제조하였다. For the preparation of the composition according to the present invention, first, 0.4Pb (Mg 1/3 Nb 2/3 ) O 3 -0.25PbZrO 3 -0.35 using PbO, MgO, Nb 2 O 5 , ZrO 2 , TiO 2 raw powder PbTiO 3 powder (PMN-PZ-PT powder) was prepared.

상기 방법으로 제조된 PMN-PZ-PT 분말 100중량부에, 0.05중량부의 Li2CO3 와 0.01 중량부의 Bi2O3, 1중량부의 PbO, 그리고, d중량부의 CuO를 첨가하여 습식 분쇄하여 조립화 하였다. 즉, Li2CO3 , Bi2O3, PbO, 는 각각의 비율로 고정하고, CuO 의 량만을 변화시켜 실험을 실시하였다. PMN-PZ-PT 분말 100중량부 대비, 첨가되는 CuO의 중량부이다. To 100 parts by weight of the PMN-PZ-PT powder prepared by the above method, 0.05 parts by weight of Li 2 CO 3 , 0.01 parts by weight of Bi 2 O 3 , 1 part by weight of PbO, and d parts by weight of CuO were added to wet grinding to granulate. It was made. That is, Li 2 CO 3 , Bi 2 O 3 , PbO, were fixed at respective ratios, and the experiment was carried out by changing only the amount of CuO. It is a weight part of CuO added with respect to 100 weight part of PMN-PZ-PT powder.

시편번호 1~6까지는 CuO가 사용되지 않은 경우, 시편번호 7~12까지는 CuO가 0.1 중량부 사용된 경우, 시편번호 13~18까지는 CuO가 0.2 중량부 사용된 경우, 시편번호 19~24까지는 CuO가 0.3 중량부 사용된 경우, 시편번호 25~30까지는 CuO가 0.1 중량부 사용된 경우이다. When CuO is not used in Specimen Nos. 1 to 6, 0.1 parts by weight of CuO is used in Specimen Nos. 7 to 12, and 0.2 parts by weight of CuO is used in Specimen numbers 13 to 18, and CuO is used in Specimen numbers 19 to 24. When 0.3 parts by weight is used, specimen numbers 25 to 30 are 0.1 parts by weight of CuO.

각각의 시편을 지름 18mm인 금형을 사용하여 약 100MPa의 압력으로 가압 성형한 후 900℃~1150℃의 온도범위에서 4시간동안 소성 하였다. Each specimen was press-molded at a pressure of about 100 MPa using a mold having a diameter of 18 mm, and then fired for 4 hours in a temperature range of 900 ° C to 1150 ° C.

그런 후, 시료 두께를 1mm로 가공한 다음 인쇄 도포법으로 시료 양면에 은(Ag)전극을 도포 한 후, 700℃에서 10분 동안 열처리하였다. 상기 방법으로 제조된 시편을 120℃에서 30분간 3kV/mm의 전계를 인가하여 분극처리 하였다. Thereafter, the sample thickness was processed to 1 mm, and then silver (Ag) electrodes were coated on both sides of the sample by a printing coating method, and then heat-treated at 700 ° C. for 10 minutes. The specimen prepared by the above method was polarized by applying an electric field of 3 kV / mm at 120 ° C. for 30 minutes.

임피던스해석기(HP4194A)로 압전세라믹스의 공진주파수(fr), 반공진주파수(fa), 정전용량(C), 유전손실(tanδ)을 측정하였고, 압전상수(d33)는 Berlincourt d33 meter를 이용하여 측정하였으며, 면진동모드 전기기계결합계수(kp)와 유전율(εr)는 각각 다음식을 이용하여 계산하였다. 여기서 △f=fa-fr, C는 1kHz에서의 정전용량, A는 시편의 면적, t는 시편의 두께, ε0는 진공의 유전율로 8.854×10-12F/m이다.The resonant frequency (f r ), antiresonant frequency (f a ), capacitance ( C ), and dielectric loss (tanδ) of the piezoelectric ceramics were measured with an impedance analyzer (HP4194A), and the piezoelectric constant (d 33 ) was Berlincourt d 33 meter. The surface vibration mode electromechanical coupling coefficient (k p ) and permittivity (ε r ) were calculated using the following equation. Where Δf = f a -f r , where C is the capacitance at 1 kHz, A is the area of the specimen, t is the thickness of the specimen, and ε 0 is the dielectric constant of the vacuum at 8.854 × 10 -12 F / m.

Figure 112008076481817-pat00002
Figure 112008076481817-pat00002

Figure 112008076481817-pat00003
Figure 112008076481817-pat00003

즉, 각각의 시편을 900℃~1150℃에서 소성하였으며, 그 물성을 측정한 결과를 표1에 나타내었다. 표 1은 각각의 시편에서 사용된 CuO의 첨가량 및 소결온도, 유전율, kp , 유전상수를 정리한 표이다. That is, each specimen was calcined at 900 ℃ ~ 1150 ℃, the results of measuring the physical properties are shown in Table 1. Table 1 summarizes the amount of CuO used in each specimen, the sintering temperature, the dielectric constant, k p , and the dielectric constant.

표 1.Table 1. 압전세라믹 시료의 CuO 첨가량 및 제작된 시편의 소결온도, 유전율 및 압전 상수 값 CuO content of piezoceramic sample and sintering temperature, dielectric constant and piezoelectric constant value of fabricated specimen

시편
번호
Psalter
number
CuO 첨가량
CuO addition amount
소결온도
(℃)
Sintering Temperature
(℃)
유전율
r)
permittivity
r )
kp k p d33
(pC/N)
d 33
(pC / N)
1One

0


0
900900 1879 1879 0.307870.30787 237237
22 950950 3747 3747 0.509290.50929 449449 33 10001000 4356 4356 0.653910.65391 561561 44 10501050 4713 4713 0.646990.64699 553553 55 11001100 4833 4833 0.668460.66846 610610 66 11501150 4963 4963 0.665550.66555 622622 77

0.1


0.1
900900 2622 2622 0.353170.35317 240240
88 950950 4148 4148 0.682280.68228 587587 99 10001000 4579 4579 0.700330.70033 620620 1010 10501050 4878 4878 0.686830.68683 611611 1111 11001100 4930 4930 0.697380.69738 628628 1212 11501150 4993 4993 0.707630.70763 638638 1313

0.2


0.2
900900 2677 2677 0.422880.42288 378378
1414 950950 4390 4390 0.719080.71908 634634 1515 10001000 4704 4704 0.726940.72694 653653 1616 10501050 4767 4767 0.705840.70584 643643 1717 11001100 4651 4651 0.695280.69528 642642 1818 11501150 4579 4579 0.589440.58944 568568 1919

0.3


0.3
900900 4314 4314 0.61850.6185 585585
2020 950950 4838 4838 0.725810.72581 669669 2121 10001000 4715 4715 0.69990.6999 632632 2222 10501050 4651 4651 0.645140.64514 590590 2323 11001100 4436 4436 0.563690.56369 515515 2424 11501150 4143 4143 0.580.58 523523 2525

0.5


0.5
900900 4616 4616 0.669680.66968 613613
2626 950950 4863 4863 0.669080.66908 615615 2727 10001000 4642 4642 0.677630.67763 622622 2828 10501050 4520 4520 0.64150.6415 570570 2929 11001100 4302 4302 0.539390.53939 503503 3030 11501150 4047 4047 0.507540.50754 437437

상기 표 1에서 CuO가 첨가되지 않았을 때 1150℃ 열처리한 시편의 경우 (시편번호 6번) 압전상수(d33) 622 pC/N, 전기기계결합계수(kp) 0.666, 유전율 4963의 특성을 보였다. 이는 압전변위제어용으로 적층형 압전 액츄에이터에 사용될 수 있는 매우 우수한 특성이다. In Table 1, when CuO was not added, the specimens heat-treated at 1150 ° C. (Sample No. 6) showed piezoelectric constants (d33) of 622 pC / N, an electromechanical coupling coefficient (kp) of 0.666, and a dielectric constant of 4963. This is a very good characteristic that can be used in stacked piezoelectric actuators for piezoelectric displacement control.

위 조성에 CuO를 첨가하여 특성을 살펴본 결과, 적정 소결온도가 낮아짐을 확인할 수 있다. 950℃의 온도를 기준으로 본다면, CuO의 첨가량이 많을수록 압전상수가 증가하다가, CuO 첨가량이 0.5중량부에서 점차 압전 특성이 낮아짐을 확인 할 수 있다. 특히 CuO 첨가량이 0.3중량부이고 열처리 온도가 950℃의 경우 (시편번호 20번) d33 669, kp 0.726, 유전율 4838 로 시편번호6보다도 우수한 압전특성을 보이며 가장 우수한 압전 특성을 나타냄을 확인할 수 있다.As a result of examining the characteristics by adding CuO to the above composition, it can be seen that the appropriate sintering temperature is lowered. Based on the temperature of 950 ℃, it can be seen that the piezoelectric constant increases as the amount of added CuO increases, but gradually decreases the piezoelectric properties at 0.5 parts by weight. In particular, when the amount of CuO added 0.3 parts by weight and the heat treatment temperature (950 ℃) (sample No. 20) d33 669, kp 0.726, dielectric constant 4838 it can be seen that the piezoelectric properties superior to the specimen number 6 and the most excellent piezoelectric properties.

따라서, 소결온도가 950℃로 낮아 경제적/환경적 장점을 가진 저온소성용 압전변위제어용으로 적층형 압전 액츄에이터에 사용될 수 있는 매우 우수한 특성의 압전 자기 조성물이 개발되었다. Accordingly, a piezoelectric ceramic composition having very excellent characteristics that can be used in a laminated piezoelectric actuator for low temperature firing piezoelectric displacement control having an sintering temperature of 950 ° C. has been developed.

도 1은 본 발명의 바람직한 실시예에 따른, 고변위 적층형 압전 액츄에이이터용 저온 소결 압전 자기 조성물의 제조방법의 개략도. 1 is a schematic diagram of a method for manufacturing a low temperature sintered piezoelectric ceramic composition for a high displacement laminated piezoelectric actuator according to a preferred embodiment of the present invention.

Claims (5)

안정한 ABO3 구조를 갖는 xPb(Mg1/3Nb2/3)O3-yPbZrO3-zPbTiO3에, Li2CO3, Bi2O3, PbO, 및 CuO가 첨가된 압전 자기 조성물로서, As a piezoelectric ceramic composition to which Li 2 CO 3 , Bi 2 O 3 , PbO, and CuO are added to xPb (Mg 1/3 Nb 2/3 ) O 3 -yPbZrO 3 -zPbTiO 3 having a stable ABO 3 structure, 여기서, x는 0.35이상 0.45이하이고, y는 0.2이상 0.3이하이고, z는 1-x-y 이며, Here, x is 0.35 or more and 0.45 or less, y is 0.2 or more and 0.3 or less, z is 1-x-y, 상기 CuO는 xPb(Mg1/3Nb2/3)O3-yPbZrO3-zPbTiO3 100중량부 대비 d 중량부가 첨가되는 데, 상기 d는 0초과 0.5이하의 범위인 것을 특징으로 하는 압전 자기 조성물. The CuO is added d parts by weight relative to 100 parts by weight of xPb (Mg 1/3 Nb 2/3 ) O 3 -yPbZrO 3 -zPbTiO 3 , wherein d is a piezoelectric ceramic composition, characterized in that 0 to more than 0.5 . 제 1항에 있어서, The method of claim 1, 상기 Li2CO3, PbO 및 Bi2O3는 xPb(Mg1/3Nb2/3)O3-yPbZrO3-zPbTiO3 100 중량부 대비 각각 a 중량부의 Li2CO3, b중량부의 Bi2O3, c중량부의 PbO 가 첨가되는 데, The Li 2 CO 3 , PbO and Bi 2 O 3 are a part by weight of Li 2 CO 3 , b part by weight of Bi 2 relative to 100 parts by weight of xPb (Mg 1/3 Nb 2/3 ) O 3 -yPbZrO 3 -zPbTiO 3 O 3 , c parts by weight of PbO is added, 상기 a는 0.02이상 0.07이하이며, A is 0.02 or more and 0.07 or less, 상기 b는 0.005이상 0.02이하이며, B is 0.005 or more and 0.02 or less, 상기 c는 0.5이상 2이하인 것을 특징으로 하는 압전 자기 조성물. C is a piezoelectric ceramic composition, characterized in that less than 0.5. 제 1항 또는 제 2항에 있어서, The method according to claim 1 or 2, 상기 d는 0.3인 것을 특징으로 하는 압전 자기 조성물. The d is 0.3 piezoelectric ceramic composition, characterized in that. 안정한 ABO3 구조를 갖는 0.4Pb(Mg1/3Nb2/3)O3-0.25PbZrO3-0.35PbTiO3 의 100중량부 대비, 0.05 중량부의 Li2CO3, 0.01 중량부의 Bi2O3, 1 중량부의 PbO 및 d중량부의 CuO가 첨가된 압전 자기 조성물로서, 0.05 part by weight of Li 2 CO 3 , 0.01 part by weight of Bi 2 O 3 , relative to 100 parts by weight of 0.4 Pb (Mg 1/3 Nb 2/3 ) O 3 -0.25PbZrO 3 -0.35PbTiO 3 having a stable ABO 3 structure; A piezoelectric ceramic composition to which 1 part by weight of PbO and d parts by weight of CuO are added, 상기 d는 0 초과 0.5이하의 범위인 것을 특징으로 하는 압전 자기 조성물. The d is in the range of more than 0 and less than 0.5 piezoelectric ceramic composition. 제 4항에 있어서, The method of claim 4, wherein 상기 d는 0.3인 것을 특징으로 하는 압전 자기 조성물. The d is 0.3 piezoelectric ceramic composition, characterized in that.
KR1020080108969A 2008-11-04 2008-11-04 Piezoelectric ceramic composition of high performance multi-layer ceramic actuators for low temperature sintering KR100977420B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020080108969A KR100977420B1 (en) 2008-11-04 2008-11-04 Piezoelectric ceramic composition of high performance multi-layer ceramic actuators for low temperature sintering

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020080108969A KR100977420B1 (en) 2008-11-04 2008-11-04 Piezoelectric ceramic composition of high performance multi-layer ceramic actuators for low temperature sintering

Publications (2)

Publication Number Publication Date
KR20100049928A KR20100049928A (en) 2010-05-13
KR100977420B1 true KR100977420B1 (en) 2010-08-24

Family

ID=42276158

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080108969A KR100977420B1 (en) 2008-11-04 2008-11-04 Piezoelectric ceramic composition of high performance multi-layer ceramic actuators for low temperature sintering

Country Status (1)

Country Link
KR (1) KR100977420B1 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05110158A (en) * 1991-07-17 1993-04-30 Toto Ltd Ferroelectric body porcelain composition
JP2001106569A (en) 1995-10-09 2001-04-17 Ngk Insulators Ltd Electric-field-induced distorted material
JP2001302347A (en) 2000-04-24 2001-10-31 Kansai Research Institute Piezoelectric ceramic composition and manufacturing method thereof, piezoelectric element and manufacturing method thereof, and ink jet type printer head using the same and ultrasonic motor
JP2005247619A (en) 2004-03-03 2005-09-15 Ngk Insulators Ltd Piezoelectric/electrostrictive ceramic composition, piezoelectric/electrostrictive substance, and piezoelectric/electrostrictive membrane type element

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05110158A (en) * 1991-07-17 1993-04-30 Toto Ltd Ferroelectric body porcelain composition
JP2001106569A (en) 1995-10-09 2001-04-17 Ngk Insulators Ltd Electric-field-induced distorted material
JP2001302347A (en) 2000-04-24 2001-10-31 Kansai Research Institute Piezoelectric ceramic composition and manufacturing method thereof, piezoelectric element and manufacturing method thereof, and ink jet type printer head using the same and ultrasonic motor
JP2005247619A (en) 2004-03-03 2005-09-15 Ngk Insulators Ltd Piezoelectric/electrostrictive ceramic composition, piezoelectric/electrostrictive substance, and piezoelectric/electrostrictive membrane type element

Also Published As

Publication number Publication date
KR20100049928A (en) 2010-05-13

Similar Documents

Publication Publication Date Title
JP4795748B2 (en) Piezoelectric actuator
EP2104152B1 (en) Piezoelectric ceramic and piezoelectric element employing it
JP5929640B2 (en) Piezoelectric ceramic and piezoelectric element
JP5572998B2 (en) Piezoelectric ceramic composition and piezoelectric element
CN101429022A (en) Ferro-voltage ceramic component with low sintering temperature character, production and uses thereof
JPH11292625A (en) Production of piezoelectric ceramic
CN101265081B (en) Ferroelectric ceramic with low-temperature sintering characteristic and its technique and application
US20120112607A1 (en) Ceramic composition for piezoelectric actuator and piezoelectric actuator including the same
KR100481226B1 (en) Piezoelectric ceramic composition for ceramic actuators and Method of fabricating the piezoelectric ceramics
JP2011029537A (en) Multilayer electronic component and method of manufacturing the same
JP5392603B2 (en) Method for manufacturing piezoelectric ceramic electronic component
KR100977420B1 (en) Piezoelectric ceramic composition of high performance multi-layer ceramic actuators for low temperature sintering
JP2000072539A (en) Piezoelectric material
KR101012143B1 (en) Composition of lead-free piezoelectric ceramics for sensor and actuator and making method for the same
JP4688329B2 (en) Piezoelectric ceramic for actuator, laminated piezoelectric actuator, and injection device
JP2017157830A (en) Piezoelectric ceramic plate, plate-like substrate, and electronic component
KR100804680B1 (en) Piezoelectric composite ceramic composition allowable to simple poling process and manufacturing process thereof
KR100482724B1 (en) Low Temperature Firable PZT Compositions and piezoelectric ceramic devices using the same
JP6798901B2 (en) Plate-shaped substrate and electronic components
JP2001284668A (en) Laminated piezoelectric element, piezoelectric actuator, and injection equipment
JP4688330B2 (en) Piezoelectric ceramic, multilayer piezoelectric element, and injection device
KR100559771B1 (en) Piezoelectric ceramic composite for multilayered piezoelectric actuators
KR101176502B1 (en) Piezoelectric ceramic composition
KR100884719B1 (en) Composition of lead-free ceramics for piezoelectric actuators
KR100369307B1 (en) Piezoelectric ceramic composition for high power piezoelectric devices

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20130612

Year of fee payment: 4

FPAY Annual fee payment

Payment date: 20140619

Year of fee payment: 5

FPAY Annual fee payment

Payment date: 20160801

Year of fee payment: 7

FPAY Annual fee payment

Payment date: 20170801

Year of fee payment: 8

FPAY Annual fee payment

Payment date: 20180814

Year of fee payment: 9

FPAY Annual fee payment

Payment date: 20190812

Year of fee payment: 10