KR100970661B1 - 신규 폴리머, 폴리머 합성 방법 및 포토레지스트 조성물 - Google Patents

신규 폴리머, 폴리머 합성 방법 및 포토레지스트 조성물 Download PDF

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Publication number
KR100970661B1
KR100970661B1 KR1020097008576A KR20097008576A KR100970661B1 KR 100970661 B1 KR100970661 B1 KR 100970661B1 KR 1020097008576 A KR1020097008576 A KR 1020097008576A KR 20097008576 A KR20097008576 A KR 20097008576A KR 100970661 B1 KR100970661 B1 KR 100970661B1
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South Korea
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substituted
reaction
unsubstituted
polymerization
polymer
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Expired - Fee Related
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KR1020097008576A
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English (en)
Korean (ko)
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KR20090074222A (ko
Inventor
조지 지. 바클레이
스테판 제이. 카포레일
로버트 제이. 카바나흐
니콜라스 푸글리아노
Original Assignee
롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨
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Publication of KR20090074222A publication Critical patent/KR20090074222A/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F234/00—Copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain and having one or more carbon-to-carbon double bonds in a heterocyclic ring
    • C08F234/02—Copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain and having one or more carbon-to-carbon double bonds in a heterocyclic ring in a ring containing oxygen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F234/00—Copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain and having one or more carbon-to-carbon double bonds in a heterocyclic ring
    • C08F234/04—Copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain and having one or more carbon-to-carbon double bonds in a heterocyclic ring in a ring containing sulfur
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2012—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image using liquid photohardening compositions, e.g. for the production of reliefs such as flexographic plates or stamps
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
KR1020097008576A 2001-02-27 2002-02-26 신규 폴리머, 폴리머 합성 방법 및 포토레지스트 조성물 Expired - Fee Related KR100970661B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US27140101P 2001-02-27 2001-02-27
US60/271,401 2001-02-27

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020037011229A Division KR100976988B1 (ko) 2001-02-27 2002-02-26 신규 폴리머, 폴리머 합성 방법 및 포토레지스트 조성물

Publications (2)

Publication Number Publication Date
KR20090074222A KR20090074222A (ko) 2009-07-06
KR100970661B1 true KR100970661B1 (ko) 2010-07-15

Family

ID=23035387

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020107003751A Ceased KR20100025596A (ko) 2001-02-27 2002-02-26 신규 폴리머, 폴리머 합성 방법 및 포토레지스트 조성물
KR1020037011229A Expired - Fee Related KR100976988B1 (ko) 2001-02-27 2002-02-26 신규 폴리머, 폴리머 합성 방법 및 포토레지스트 조성물
KR1020097008576A Expired - Fee Related KR100970661B1 (ko) 2001-02-27 2002-02-26 신규 폴리머, 폴리머 합성 방법 및 포토레지스트 조성물

Family Applications Before (2)

Application Number Title Priority Date Filing Date
KR1020107003751A Ceased KR20100025596A (ko) 2001-02-27 2002-02-26 신규 폴리머, 폴리머 합성 방법 및 포토레지스트 조성물
KR1020037011229A Expired - Fee Related KR100976988B1 (ko) 2001-02-27 2002-02-26 신규 폴리머, 폴리머 합성 방법 및 포토레지스트 조성물

Country Status (4)

Country Link
US (2) US6841331B2 (enExample)
JP (1) JP2004524564A (enExample)
KR (3) KR20100025596A (enExample)
WO (1) WO2002069040A1 (enExample)

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* Cited by examiner, † Cited by third party
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KR20100025596A (ko) * 2001-02-27 2010-03-09 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨 신규 폴리머, 폴리머 합성 방법 및 포토레지스트 조성물
DE10203839B4 (de) * 2002-01-31 2007-10-18 Infineon Technologies Ag Resist für die Fotolithografie mit reaktiven Gruppen für eine nachträgliche Modifikation der Resiststrukturen
TWI349831B (en) * 2003-02-20 2011-10-01 Maruzen Petrochem Co Ltd Resist polymer and method for producing the polymer
US20050160934A1 (en) 2004-01-23 2005-07-28 Molecular Imprints, Inc. Materials and methods for imprint lithography
US7307118B2 (en) 2004-11-24 2007-12-11 Molecular Imprints, Inc. Composition to reduce adhesion between a conformable region and a mold
TWI371657B (en) * 2004-02-20 2012-09-01 Fujifilm Corp Positive resist composition for immersion exposure and method of pattern formation with the same
US8076386B2 (en) * 2004-02-23 2011-12-13 Molecular Imprints, Inc. Materials for imprint lithography
US7759407B2 (en) 2005-07-22 2010-07-20 Molecular Imprints, Inc. Composition for adhering materials together
US8808808B2 (en) 2005-07-22 2014-08-19 Molecular Imprints, Inc. Method for imprint lithography utilizing an adhesion primer layer
US8557351B2 (en) 2005-07-22 2013-10-15 Molecular Imprints, Inc. Method for adhering materials together
JP4774252B2 (ja) * 2005-08-17 2011-09-14 富士フイルム株式会社 ポジ型レジスト組成物、該ポジ型レジスト組成物の製造方法及び該ポジ型レジスト組成物を用いたパターン形成方法
KR100688569B1 (ko) * 2005-08-30 2007-03-02 삼성전자주식회사 플루오르를 함유하는 탑 코팅 조성물과 이를 이용한포토레지스트 패턴 형성 방법
US8142703B2 (en) 2005-10-05 2012-03-27 Molecular Imprints, Inc. Imprint lithography method
JP5215228B2 (ja) * 2009-04-16 2013-06-19 株式会社ダイセル フォトレジスト用樹脂組成物の製造法
US8541523B2 (en) 2010-04-05 2013-09-24 Promerus, Llc Norbornene-type polymers, compositions thereof and lithographic process using such compositions
JP5811848B2 (ja) * 2010-10-18 2015-11-11 三菱レイヨン株式会社 リソグラフィー用重合体の製造方法、レジスト組成物の製造方法、パターンが形成された基板の製造方法
JP5743858B2 (ja) * 2011-11-14 2015-07-01 丸善石油化学株式会社 低分子量レジスト用共重合体の製造方法
US9796815B2 (en) * 2013-07-31 2017-10-24 Dow Global Technologies Llc Process for preparing polycarbamate and reaction product thereof
US9006379B2 (en) * 2013-07-31 2015-04-14 Dow Global Technologies Llc Process to produce polycarbamate using a gradient feed of urea
CN108264605A (zh) * 2016-12-30 2018-07-10 罗门哈斯电子材料韩国有限公司 单体、聚合物和光致抗蚀剂组合物

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WO1999050322A1 (en) * 1998-03-27 1999-10-07 Mitsubishi Rayon Co., Ltd. Copolymer, process for producing the same, and resist composition

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KR100258494B1 (ko) * 1992-06-02 2000-06-15 미우라 아끼라 레지스트 표면 반사 방지막 형성 조성물 및 패턴 형성방법
EP0779308B1 (en) * 1995-12-11 2001-01-24 Mitsui Chemicals, Inc. Heat-resistant high-nitrile polymer compositions and process for preparing same
JPH1060214A (ja) * 1996-08-22 1998-03-03 Nippon Oil Co Ltd カラーフィルター用アクリル樹脂組成物
EP1059568B1 (en) * 1999-06-07 2007-02-14 Canon Kabushiki Kaisha Toner and image forming method
TWI227377B (en) * 1999-10-06 2005-02-01 Fuji Photo Film Co Ltd Positive-type resist composition
KR20100025596A (ko) * 2001-02-27 2010-03-09 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨 신규 폴리머, 폴리머 합성 방법 및 포토레지스트 조성물

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Publication number Priority date Publication date Assignee Title
WO1999050322A1 (en) * 1998-03-27 1999-10-07 Mitsubishi Rayon Co., Ltd. Copolymer, process for producing the same, and resist composition

Also Published As

Publication number Publication date
US7208261B2 (en) 2007-04-24
KR100976988B1 (ko) 2010-08-19
KR20100025596A (ko) 2010-03-09
JP2004524564A (ja) 2004-08-12
US6841331B2 (en) 2005-01-11
KR20040030516A (ko) 2004-04-09
US20030027075A1 (en) 2003-02-06
US20040259025A1 (en) 2004-12-23
WO2002069040A1 (en) 2002-09-06
KR20090074222A (ko) 2009-07-06

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