KR100965542B1 - Method for fabricating field emission display including mesh grid - Google Patents

Abstract

The present invention relates to a method of manufacturing a field emission display device having a metal mesh grid for preventing arc generation and focusing and accelerating electrons. The present invention relates to a front substrate and a back substrate which are disposed to face each other and are sealed when a vacuum container is formed. A cathode structure having a field emission emitter formed on the rear substrate, a mesh grid formed in close contact with the cathode structure to perform electron focusing and acceleration control, an anode electrode formed on the front substrate, and the A method of manufacturing a field emission display device having a fluorescent film coated on an anode electrode, wherein the fixing process of the metal mesh grid is performed at a higher firing temperature than the sealing process of a front substrate and a back substrate. A method of manufacturing a display device is disclosed.

FED, Arc, Mesh Grid, Firing, Frit

Description

Field emission display device having a mesh grid and a method of manufacturing the same {METHOD FOR FABRICATING FIELD EMISSION DISPLAY INCLUDING MESH GRID}

1 is a block diagram of a field emission display device according to a preferred embodiment of the present invention.

FIG. 2 is a plan view illustrating a configuration example of the mesh grid of FIG. 1.

3 is a flowchart schematically illustrating a manufacturing process of the field emission display device according to the preferred embodiment of the present invention.

DESCRIPTION OF THE REFERENCE NUMERALS OF THE DRAWINGS

10 back panel 11 cathode electrode

12 ... emitter 13 ... insulation layer

14 ... gate electrode 15 ... mesh fixing frit

18 Spacer 19 Anode electrode

20 Front panel 21 Fluorescent film

30 ... mesh grid 30a ... mesh hole

31.Insulation

The present invention relates to a field emission display device and a method of manufacturing the same, and more particularly, field emission with a mesh grid that can be stably fixed to the back substrate side while preventing arc generation and focusing and accelerating emission electrons. A display element and a method of manufacturing the same.

A field emission display (FED) emits electrons from an emitter corresponding to, for example, carbon nanotubes (CNTs) by using a field emission effect, and then accelerates to the anode electrode side to excite the fluorescent layer. A display device that displays a predetermined image in a manner, usually having a triode structure having a cathode electrode, a gate electrode, and an anode electrode.

Such a field emission display device having a triode structure often generates an arc discharge in an internal space between the rear substrate and the front substrate when driven, and such arc discharge is caused by outgassing generated inside the substrate. It can be regarded as a discharge phenomenon that occurs when many gases are ionized at a moment. This arc discharge is more severely generated as the anode voltage is increased. When the arc discharge is generated, the anode electrode and the gate electrode are electrically shorted, which causes a problem in that a large current flows and the electrode is damaged.

 Meanwhile, a technology for interposing a mesh grid between the gate electrode and the anode electrode for preventing the arc discharge and controlling the focusing of the electrons has been introduced. Such a mesh grid structure of the related art has a cathode electrode of a rear substrate and a cathode. Not only is it not easy to adjust the alignment, but also there is a problem that stable fixation is not achieved, which causes the electron emitted from the emitter to hit the phosphor in the adjacent region instead of the selected light emitting region, which often causes color purity to drop. It became.

The present invention was devised to solve the above problems, and prevents arc generation and focuses and accelerates the emission electrons, but is fixed to the rear substrate to maintain a stable state even in a sealed state of the front substrate and the rear substrate. An object of the present invention is to provide a method for manufacturing a field emission display device having a mesh grid.

In order to achieve the above object, the present invention, a cathode structure having a front substrate and a rear substrate which are disposed facing each other and sealed when the vacuum vessel is formed, and the field emission emitter formed on the rear substrate; A method of manufacturing a field emission display device having a mesh grid formed to be in close contact with the cathode structure to perform focusing and acceleration control of an anode, an anode formed on the front substrate, and a fluorescent film coated on the anode electrode; The metal mesh grid fixing process is performed at a higher firing temperature than the sealing process of the front substrate and the rear substrate.

Preferably, the present invention may further include forming an insulating film on at least one surface of the metal mesh grid.

Prior to the insulating film forming process, an oxide film forming process is performed to enhance the adhesion between the metal mesh grid and the insulating film, and the oxide film forming is performed at 800 to 1000 ° C. in an all firing process to remove residual stress of the metal mesh grid. Can be.                     

According to another aspect of the invention, the front substrate and the rear substrate which are disposed facing each other and sealed when forming a vacuum vessel; A cathode electrode array in which field emission emitters are periodically formed on the rear substrate and are arranged at regular intervals; An insulating layer formed on the cathode electrode array, the plurality of openings being provided to expose each emitter to the front substrate side; A gate electrode array intersecting the cathode electrode array and provided on an insulating layer and provided with a gate hole corresponding to the opening; A metal mesh grid that performs electron focusing and acceleration, and is fired at a temperature higher than the firing temperature of the sealing process and fixed to the gate electrode array; A field emission display device including an anode electrode array intersecting the cathode electrode array and formed on a front substrate and a fluorescent film coated on the anode electrode array is provided.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a block diagram of a field emission display device according to a preferred embodiment of the present invention.

Referring to FIG. 1, the field emission display device according to the present invention may be disposed to face each other at a predetermined interval, and may be sealed to form a front substrate 20 and a rear substrate 10, and a rear substrate 10. An array of cathode electrodes 11 formed thereon, an array of gate electrodes 14 intersecting the cathode electrodes 11 with the insulating layer 13 interposed therebetween, and partially fixed to the gate electrodes 14 On the mesh grid 30 coated with the insulating film 31, the anode electrode 19 formed on the front substrate 20 while crossing the cathode electrode 11, and on the anode electrode 19. The fluorescent film 21 formed is included.

The cathode electrode 11 and the gate electrode 14 are periodically arranged on a stripe to form an array, and an opening and a gate are respectively formed in the insulating layer 13 and the gate electrode 14 corresponding to the intersection points. A hole is provided to expose the emitter 12 provided on the cathode electrode 11 in the direction of the front substrate 20. The emitter 12 is a portion that emits electrons when a high electric field is applied, and preferably carbon nanotubes (CNTs) may be employed. On the surface of the anode electrode 19 opposite to the emitter 12, red, green, and blue fluorescent films 21 emitting light when electrons emitted from the emitter 12 collide with each other are provided.

The mesh grid 30 is fixed on the gate electrode 14 to prevent damage to the emitter 12 during arc discharge and to improve focusing of emission electrons. The mesh grid 30 includes a mesh hole 30a opened in each color unit of the fluorescent film 21, and preferably, may be formed of sus (SUS) steel or invar (INVAR) steel.

As shown in FIG. 2, the mesh grid 30 may be formed in a structure having a mesh hole 30a periodically, and an insulating layer 31 is coated in a predetermined pattern at adjacent portions between the mesh holes 30a. .

A mesh fixing frit 15 is applied to the insulating layer 31 having the pattern as described above, and a portion of the insulating layer 31 is fixed to the gate electrode 14 by the medium, thereby substantially eliminating the mesh grid 30. One surface of is fixed to the rear substrate 10 side. The firing temperature of the mesh fixing frit 15 for the fixing process is set to a temperature higher than the firing temperature during the sealing process of the front substrate 20 and the rear substrate which are performed in a later process, and thus the mesh during the sealing process. The grid 30 is prevented from moving in a fixed state.

One end of the spacer 18 is fixedly installed on the other surface of the mesh grid 30 to substantially maintain a gap between the rear substrate 10 and the front substrate 20.

Next, a manufacturing process of the field emission display device according to the present invention having the above configuration will be described with reference to FIG. 3.

First, a process of forming the cathode electrode 11, the insulating layer 13, the gate electrode 14, and the emitter 12 on the back substrate 10 using a conventional method is performed (step S100).

Subsequently, the mesh grid 30 is formed on the gate electrode 14 in the following manner. Here, the material of the mesh grid 30 uses sus steel or Invar steel. Invar steel, in particular, is used as a shadow mask when manufacturing cathode ray tubes, and its thermal expansion coefficient is much smaller than that of general sus materials, which is effective in reducing thermal stress generated during the following firing process. Therefore, it is preferable to use Invar steel when manufacturing a large area device, and to use a typical sustain strength when manufacturing a small device.

On the other hand, there is a possibility that residual stress remains in the metal mesh grid 30, and if it is simply used, distortion of the metal mesh grid may occur during the firing process. Therefore, the pre-firing process of step S110 is performed. In this case, all residual stress remaining in the metal mesh grid 30 disappears, thereby maintaining a flat shape even after the firing process. Preferably, the oxide film forming process is performed at a temperature between 800 and 1000 ° C. with respect to the surface of the metal mesh grid 30 in order to improve the adhesion between the insulating film 31 and the metal mesh grid 30 during the baking process. Can be.

After the complete plasticity is completed, the insulating film 31 is coated on the upper and / or lower part of the mesh grid 30 by screen printing or the like and then calcined at 400 to 600 ° C. to make a complete insulator. Subsequently, the mesh grid 30 having the insulating film 31 formed thereon is aligned and aligned with the emitter 12 exposed on the back substrate 10, and then the back substrate 10 is formed using the mesh fixing frit 15. The metal mesh grid 30 is completely fixed to it (step S120). The fixing step is to fire the mesh fixing frit 15 at a temperature higher than the firing temperature of the sealing step in order to prevent the mesh fixing frit 15 from twisting at the firing temperature of the sealing step.

Therefore, the curing temperature of the mesh fixing frit 15 should be higher than the curing temperature of the sealing frit in order to prevent the mesh fixing frit 15 from curing and twisting at the firing temperature of the sealing process. The mesh fixing frit 15 has a curing temperature of 350 to 500 ° C., preferably, the curing temperature of the mesh fixing frit 15 is 400 to 430 ° C., and the sealing frit curing temperature is less than 380 ° C. to 400 ° C. It is excellent to use materials with a range.

After the fixing process, the electrode is patterned, and then the front substrate 20, in which the phosphor is formed by electrophoresis, screen printing, slurry method, and the like, and the black matrix is formed in a conventional manner, is aligned with the rear substrate, and sealed, and then the field emission display is performed. The manufacturing process of the device is completed (step S130).

Although the present invention has been described above by means of limited embodiments and drawings, the present invention is not limited thereto and will be described below by the person skilled in the art to which the present invention pertains. Of course, various modifications and variations are possible within the scope of the claims.

According to the present invention, since the mesh grid is fixed to the rear substrate side by the mesh fixing frit, there is an advantage that the alignment operation with the cathode electrode can be easily performed.

In addition, according to the present invention, it is possible to stably maintain a fixed state of the mesh grid, thereby effectively preventing arc generation, as well as preventing deformation of the mesh grid so as to focus electrons accurately and stably on the fluorescent film to improve color purity. It can increase.

Claims (9)

A cathode structure having a front substrate and a rear substrate which are disposed to face each other and are encapsulated during the formation of a vacuum vessel, and an electric field emission emitter formed on the rear substrate; and the cathode structure to perform electron focusing and acceleration control In the manufacturing method of the field emission display device having a metal mesh grid formed to be in close contact with the, the anode electrode formed on the front substrate and the fluorescent film applied on the anode electrode, Wherein the fixing process of the metal mesh grid is performed at a higher firing temperature than the sealing process of the front substrate and the back substrate. The method of claim 1, And forming an insulating film on at least one surface of the metal mesh grid. The method of claim 2, wherein before the insulating film forming process, An oxide film forming process is performed to enhance adhesion between the metal mesh grid and the insulating film, The oxide film forming method is a method of manufacturing a field emission display device, characterized in that at the temperature of 800 ~ 1000 ℃ during the firing step to remove the residual stress of the metal mesh grid. A front substrate and a rear substrate disposed to face each other and sealed using a sealing frit when a vacuum container is formed; A cathode electrode array in which field emission emitters are periodically formed on the rear substrate and are arranged at regular intervals; An insulating layer formed on the cathode electrode array, the plurality of openings being provided to expose each emitter to the front substrate side; A gate electrode array intersecting the cathode electrode array and provided on an insulating layer and provided with a gate hole corresponding to the opening; A metal mesh grid that performs electron focusing and acceleration and is fixed to the gate electrode array by using a mesh fixing frit; And an anode electrode array intersecting the cathode electrode array and formed on the front substrate, and a fluorescent film coated on the anode electrode array. And a temperature for firing the mesh fixing frit to fix the metal mesh grid is higher than a temperature for firing the sealing frit. The method of claim 4, wherein And at least one surface of the mesh grid is further provided with an insulating film for insulation. A front substrate and a rear substrate disposed to face each other and sealed when a vacuum container is formed; A sealing frit formed between the front substrate and the rear substrate; A cathode structure having a field emission emitter formed on the rear substrate; A metal mesh grid formed in close contact with the cathode structure to perform electron focusing and acceleration control; A mesh fixing frit formed between the cathode and the metal mesh grid; An anode electrode formed on the front substrate; And In the field emission display device having a fluorescent film coated on the anode, Mesh frit using a material having a curing temperature higher than the curing temperature of the sealing frit. The method of claim 6, The mesh fixing frit is a mesh frit, characterized in that the curing temperature is 350 ~ 500 ℃ material. The method of claim 7, wherein The mesh fixing frit is a mesh frit, characterized in that the curing temperature is 400 ~ 430 ℃ material. The method of claim 6, The sealing frit is a mesh frit, characterized in that the curing temperature is less than 380 ℃ to 400 ℃ material.

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