KR100958289B1 - Resin composition containing catalyst precursor for electro-magnetic sheilding, forming method of metallic pattern using the same and metallic pattern prepared thereby - Google Patents
Resin composition containing catalyst precursor for electro-magnetic sheilding, forming method of metallic pattern using the same and metallic pattern prepared thereby Download PDFInfo
- Publication number
- KR100958289B1 KR100958289B1 KR1020080057233A KR20080057233A KR100958289B1 KR 100958289 B1 KR100958289 B1 KR 100958289B1 KR 1020080057233 A KR1020080057233 A KR 1020080057233A KR 20080057233 A KR20080057233 A KR 20080057233A KR 100958289 B1 KR100958289 B1 KR 100958289B1
- Authority
- KR
- South Korea
- Prior art keywords
- catalyst precursor
- resin composition
- pattern
- catalyst
- metal pattern
- Prior art date
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- 239000012018 catalyst precursor Substances 0.000 title claims abstract description 96
- 239000011342 resin composition Substances 0.000 title claims abstract description 84
- 238000000034 method Methods 0.000 title claims abstract description 75
- 229910052751 metal Inorganic materials 0.000 claims abstract description 73
- 239000002184 metal Substances 0.000 claims abstract description 73
- 239000003054 catalyst Substances 0.000 claims abstract description 63
- 238000007772 electroless plating Methods 0.000 claims abstract description 34
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical class [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229920006026 co-polymeric resin Polymers 0.000 claims abstract description 31
- 125000000524 functional group Chemical group 0.000 claims abstract description 29
- 239000000178 monomer Substances 0.000 claims abstract description 24
- 238000007747 plating Methods 0.000 claims abstract description 20
- 239000002243 precursor Substances 0.000 claims abstract description 14
- 239000000126 substance Substances 0.000 claims abstract description 13
- 239000003960 organic solvent Substances 0.000 claims abstract description 12
- 230000007261 regionalization Effects 0.000 claims abstract description 8
- 239000007787 solid Substances 0.000 claims description 19
- 150000008064 anhydrides Chemical class 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 16
- 150000004985 diamines Chemical class 0.000 claims description 15
- -1 fluorinated silver sulfonate Chemical class 0.000 claims description 15
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 14
- 150000001732 carboxylic acid derivatives Chemical group 0.000 claims description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 13
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 12
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 12
- 239000002253 acid Substances 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 9
- 239000003638 chemical reducing agent Substances 0.000 claims description 9
- 229920005989 resin Polymers 0.000 claims description 9
- 239000011347 resin Substances 0.000 claims description 9
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 8
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 claims description 6
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims description 6
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 claims description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 6
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 6
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 claims description 6
- MPIAGWXWVAHQBB-UHFFFAOYSA-N [3-prop-2-enoyloxy-2-[[3-prop-2-enoyloxy-2,2-bis(prop-2-enoyloxymethyl)propoxy]methyl]-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(COC(=O)C=C)(COC(=O)C=C)COCC(COC(=O)C=C)(COC(=O)C=C)COC(=O)C=C MPIAGWXWVAHQBB-UHFFFAOYSA-N 0.000 claims description 6
- 239000003504 photosensitizing agent Substances 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 4
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 claims description 4
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims description 4
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 claims description 4
- KUDUQBURMYMBIJ-UHFFFAOYSA-N 2-prop-2-enoyloxyethyl prop-2-enoate Chemical compound C=CC(=O)OCCOC(=O)C=C KUDUQBURMYMBIJ-UHFFFAOYSA-N 0.000 claims description 4
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 claims description 4
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 claims description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 4
- 239000002202 Polyethylene glycol Substances 0.000 claims description 4
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 claims description 4
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 claims description 4
- STVZJERGLQHEKB-UHFFFAOYSA-N ethylene glycol dimethacrylate Substances CC(=C)C(=O)OCCOC(=O)C(C)=C STVZJERGLQHEKB-UHFFFAOYSA-N 0.000 claims description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 4
- 238000007645 offset printing Methods 0.000 claims description 4
- 238000000206 photolithography Methods 0.000 claims description 4
- 229920001223 polyethylene glycol Polymers 0.000 claims description 4
- UOHMMEJUHBCKEE-UHFFFAOYSA-N prehnitene Chemical compound CC1=CC=C(C)C(C)=C1C UOHMMEJUHBCKEE-UHFFFAOYSA-N 0.000 claims description 4
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 4
- 238000007650 screen-printing Methods 0.000 claims description 4
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 claims description 3
- 150000008062 acetophenones Chemical class 0.000 claims description 3
- 239000012965 benzophenone Substances 0.000 claims description 3
- 150000008366 benzophenones Chemical class 0.000 claims description 3
- 150000002148 esters Chemical class 0.000 claims description 3
- 238000007641 inkjet printing Methods 0.000 claims description 3
- 150000002576 ketones Chemical class 0.000 claims description 3
- 150000003918 triazines Chemical class 0.000 claims description 3
- MYWOJODOMFBVCB-UHFFFAOYSA-N 1,2,6-trimethylphenanthrene Chemical compound CC1=CC=C2C3=CC(C)=CC=C3C=CC2=C1C MYWOJODOMFBVCB-UHFFFAOYSA-N 0.000 claims description 2
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 claims description 2
- LIPRQQHINVWJCH-UHFFFAOYSA-N 1-ethoxypropan-2-yl acetate Chemical compound CCOCC(C)OC(C)=O LIPRQQHINVWJCH-UHFFFAOYSA-N 0.000 claims description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 2
- MTVLEKBQSDTQGO-UHFFFAOYSA-N 2-(2-ethoxypropoxy)propan-1-ol Chemical compound CCOC(C)COC(C)CO MTVLEKBQSDTQGO-UHFFFAOYSA-N 0.000 claims description 2
- JJBFVQSGPLGDNX-UHFFFAOYSA-N 2-(2-methylprop-2-enoyloxy)propyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(C)COC(=O)C(C)=C JJBFVQSGPLGDNX-UHFFFAOYSA-N 0.000 claims description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 2
- FDSUVTROAWLVJA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol;prop-2-enoic acid Chemical compound OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OCC(CO)(CO)COCC(CO)(CO)CO FDSUVTROAWLVJA-UHFFFAOYSA-N 0.000 claims description 2
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 claims description 2
- VFZKVQVQOMDJEG-UHFFFAOYSA-N 2-prop-2-enoyloxypropyl prop-2-enoate Chemical compound C=CC(=O)OC(C)COC(=O)C=C VFZKVQVQOMDJEG-UHFFFAOYSA-N 0.000 claims description 2
- CCTFMNIEFHGTDU-UHFFFAOYSA-N 3-methoxypropyl acetate Chemical compound COCCCOC(C)=O CCTFMNIEFHGTDU-UHFFFAOYSA-N 0.000 claims description 2
- MECNWXGGNCJFQJ-UHFFFAOYSA-N 3-piperidin-1-ylpropane-1,2-diol Chemical group OCC(O)CN1CCCCC1 MECNWXGGNCJFQJ-UHFFFAOYSA-N 0.000 claims description 2
- DBCAQXHNJOFNGC-UHFFFAOYSA-N 4-bromo-1,1,1-trifluorobutane Chemical compound FC(F)(F)CCCBr DBCAQXHNJOFNGC-UHFFFAOYSA-N 0.000 claims description 2
- 125000004172 4-methoxyphenyl group Chemical group [H]C1=C([H])C(OC([H])([H])[H])=C([H])C([H])=C1* 0.000 claims description 2
- 239000004925 Acrylic resin Substances 0.000 claims description 2
- 229920000178 Acrylic resin Polymers 0.000 claims description 2
- LCFVJGUPQDGYKZ-UHFFFAOYSA-N Bisphenol A diglycidyl ether Chemical compound C=1C=C(OCC2OC2)C=CC=1C(C)(C)C(C=C1)=CC=C1OCC1CO1 LCFVJGUPQDGYKZ-UHFFFAOYSA-N 0.000 claims description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 claims description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 claims description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 2
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 claims description 2
- OKKRPWIIYQTPQF-UHFFFAOYSA-N Trimethylolpropane trimethacrylate Chemical compound CC(=C)C(=O)OCC(CC)(COC(=O)C(C)=C)COC(=O)C(C)=C OKKRPWIIYQTPQF-UHFFFAOYSA-N 0.000 claims description 2
- JUDXBRVLWDGRBC-UHFFFAOYSA-N [2-(hydroxymethyl)-3-(2-methylprop-2-enoyloxy)-2-(2-methylprop-2-enoyloxymethyl)propyl] 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(CO)(COC(=O)C(C)=C)COC(=O)C(C)=C JUDXBRVLWDGRBC-UHFFFAOYSA-N 0.000 claims description 2
- HVVWZTWDBSEWIH-UHFFFAOYSA-N [2-(hydroxymethyl)-3-prop-2-enoyloxy-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(CO)(COC(=O)C=C)COC(=O)C=C HVVWZTWDBSEWIH-UHFFFAOYSA-N 0.000 claims description 2
- 150000001242 acetic acid derivatives Chemical class 0.000 claims description 2
- 125000003158 alcohol group Chemical group 0.000 claims description 2
- 150000001408 amides Chemical class 0.000 claims description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 claims description 2
- 235000010323 ascorbic acid Nutrition 0.000 claims description 2
- 229960005070 ascorbic acid Drugs 0.000 claims description 2
- 239000011668 ascorbic acid Substances 0.000 claims description 2
- CHIHQLCVLOXUJW-UHFFFAOYSA-N benzoic anhydride Chemical compound C=1C=CC=CC=1C(=O)OC(=O)C1=CC=CC=C1 CHIHQLCVLOXUJW-UHFFFAOYSA-N 0.000 claims description 2
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 claims description 2
- 229910000365 copper sulfate Inorganic materials 0.000 claims description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 2
- 125000004386 diacrylate group Chemical group 0.000 claims description 2
- 239000003822 epoxy resin Substances 0.000 claims description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 2
- 125000000816 ethylene group Chemical group [H]C([H])([*:1])C([H])([H])[*:2] 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 claims description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 2
- CDOSHBSSFJOMGT-UHFFFAOYSA-N linalool Chemical compound CC(C)=CCCC(C)(O)C=C CDOSHBSSFJOMGT-UHFFFAOYSA-N 0.000 claims description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N o-dicarboxybenzene Natural products OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims description 2
- 229920006122 polyamide resin Polymers 0.000 claims description 2
- 229920000515 polycarbonate Polymers 0.000 claims description 2
- 239000004417 polycarbonate Substances 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 2
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- 239000009719 polyimide resin Substances 0.000 claims description 2
- 229920001228 polyisocyanate Polymers 0.000 claims description 2
- 239000005056 polyisocyanate Substances 0.000 claims description 2
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 claims description 2
- 150000005846 sugar alcohols Polymers 0.000 claims description 2
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical class CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 claims description 2
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 claims description 2
- 239000008096 xylene Substances 0.000 claims description 2
- 229920002818 (Hydroxyethyl)methacrylate Polymers 0.000 claims 1
- CBDPWKVOPADMJC-UHFFFAOYSA-N ethyl 4,4-difluoro-3-oxobutanoate Chemical compound CCOC(=O)CC(=O)C(F)F CBDPWKVOPADMJC-UHFFFAOYSA-N 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 239000004800 polyvinyl chloride Substances 0.000 claims 1
- 229920000915 polyvinyl chloride Polymers 0.000 claims 1
- CQLFBEKRDQMJLZ-UHFFFAOYSA-M silver acetate Chemical group [Ag+].CC([O-])=O CQLFBEKRDQMJLZ-UHFFFAOYSA-M 0.000 claims 1
- 230000009885 systemic effect Effects 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 23
- 229910001111 Fine metal Inorganic materials 0.000 abstract description 20
- 238000011161 development Methods 0.000 abstract description 15
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- 230000000052 comparative effect Effects 0.000 description 10
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- REYHXKZHIMGNSE-UHFFFAOYSA-M silver monofluoride Chemical compound [F-].[Ag+] REYHXKZHIMGNSE-UHFFFAOYSA-M 0.000 description 10
- 239000007864 aqueous solution Substances 0.000 description 8
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- JRMUNVKIHCOMHV-UHFFFAOYSA-M tetrabutylammonium bromide Chemical compound [Br-].CCCC[N+](CCCC)(CCCC)CCCC JRMUNVKIHCOMHV-UHFFFAOYSA-M 0.000 description 8
- 230000009467 reduction Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 238000013007 heat curing Methods 0.000 description 5
- KMOUUZVZFBCRAM-UHFFFAOYSA-N 1,2,3,6-tetrahydrophthalic anhydride Chemical compound C1C=CCC2C(=O)OC(=O)C21 KMOUUZVZFBCRAM-UHFFFAOYSA-N 0.000 description 4
- UHFFVFAKEGKNAQ-UHFFFAOYSA-N 2-benzyl-2-(dimethylamino)-1-(4-morpholin-4-ylphenyl)butan-1-one Chemical compound C=1C=C(N2CCOCC2)C=CC=1C(=O)C(CC)(N(C)C)CC1=CC=CC=C1 UHFFVFAKEGKNAQ-UHFFFAOYSA-N 0.000 description 4
- RSWGJHLUYNHPMX-ONCXSQPRSA-N abietic acid Chemical compound C([C@@H]12)CC(C(C)C)=CC1=CC[C@@H]1[C@]2(C)CCC[C@@]1(C)C(O)=O RSWGJHLUYNHPMX-ONCXSQPRSA-N 0.000 description 4
- 150000008065 acid anhydrides Chemical class 0.000 description 4
- 239000012685 metal catalyst precursor Substances 0.000 description 4
- 238000006116 polymerization reaction Methods 0.000 description 4
- KZJPVUDYAMEDRM-UHFFFAOYSA-M silver;2,2,2-trifluoroacetate Chemical compound [Ag+].[O-]C(=O)C(F)(F)F KZJPVUDYAMEDRM-UHFFFAOYSA-M 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 229920003002 synthetic resin Polymers 0.000 description 4
- UFDHBDMSHIXOKF-UHFFFAOYSA-N tetrahydrophthalic acid Natural products OC(=O)C1=C(C(O)=O)CCCC1 UFDHBDMSHIXOKF-UHFFFAOYSA-N 0.000 description 4
- QNODIIQQMGDSEF-UHFFFAOYSA-N (1-hydroxycyclohexyl)-phenylmethanone Chemical compound C=1C=CC=CC=1C(=O)C1(O)CCCCC1 QNODIIQQMGDSEF-UHFFFAOYSA-N 0.000 description 3
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 description 3
- QMYGFTJCQFEDST-UHFFFAOYSA-N 3-methoxybutyl acetate Chemical compound COC(C)CCOC(C)=O QMYGFTJCQFEDST-UHFFFAOYSA-N 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical class [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
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- C08F216/02—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical by an alcohol radical
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- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
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- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
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- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
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- C08F226/02—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen by a single or double bond to nitrogen
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- H05K1/0218—Reduction of cross-talk, noise or electromagnetic interference by printed shielding conductors, ground planes or power plane
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/105—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam
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Abstract
본 발명은 전자파 차폐를 위한 촉매 전구체 수지 조성물, 이를 이용한 금속패턴의 형성방법, 이에 따라 형성된 금속 패턴 및 금속패턴을 포함하는 부품 또는 소자에 관한 것이다. 본 발명에 의하면 카르복시산 관능기 및 카도(Cado) 관능기를 갖는 공중합체 수지, 플루오르화 은이온 유기 착화물 전구체, 다관능성 에틸렌계 불포화 결합을 갖는 단량체, 광개시제 및 유기용매를 포함하는 금속 패턴 형성용 촉매 전구체 수지 조성물이 제공되며, 또한, 이를 이용하여 기재에 촉매 전구체 패턴을 형성하고, 환원시킨 후, 무전해도금하는 금속패턴 형성방법, 이에 따라 형성된 금속패턴 및 금속패턴을 포함하는 부품 또는 소자가 제공된다. 본 발명의 촉매 전구체 수지 조성물을 사용하여 금속패턴을 형성하므로써, 형성된 촉매막의 접착성이 우수하며, 현상 또는 도금공정과 같은 습윤공정 중의 촉매유실이 적고, 증착속도가 향상되어 무전해 도금후 균일하고 미세한 금속패턴이 형성된다. 본 발명의 금속패턴 제조방법은 CRT, PDP, 액정, EL 등의 디스플레이 전면으로부터 발생되는 전자파 차폐막이나 연성 회로 기판의 배선 형성에 사용될 수 있다. The present invention relates to a catalyst precursor resin composition for shielding electromagnetic waves, a method of forming a metal pattern using the same, and a component or device including the metal pattern and the metal pattern formed accordingly. According to the present invention, a catalyst precursor for forming a metal pattern comprising a copolymer resin having a carboxylic acid functional group and a cardo functional group, a fluorinated silver ion organic complex precursor, a monomer having a polyfunctional ethylenically unsaturated bond, a photoinitiator and an organic solvent A resin composition is provided, and a method of forming a metal pattern using the same to form a catalyst precursor pattern, reducing the electroless plating and then electroless plating, and a component or device including the metal pattern and the metal pattern thus formed are provided. . By forming a metal pattern using the catalyst precursor resin composition of the present invention, the adhesion of the formed catalyst film is excellent, there is little catalyst loss during the wetting process such as development or plating process, and the deposition rate is improved to be uniform after electroless plating. A fine metal pattern is formed. The metal pattern manufacturing method of the present invention can be used to form wiring of an electromagnetic shielding film or a flexible circuit board generated from the front surface of a display such as CRT, PDP, liquid crystal, or EL.
전자파 차폐, 금속 미세패턴 형성, 플루오르화 은이온 유기 착화물, 내화학성 공중합체, 카르복시산 관능기 및 카도(cado) 관능기 포함하는 공중합체 수지 Electromagnetic shielding, metal fine pattern formation, fluorinated silver ion organic complex, chemical resistant copolymer, copolymer resin including carboxylic acid functional group and cardo functional group
Description
본 발명은 금속패턴 형성에 사용되는 촉매 전구체 수지조성물, 이를 이용한 금속패턴 형성방법, 이에 따라 형성된 금속패턴 및 금속패턴을 포함하는 부품 및 소자에 관한 것이다. 보다 상세하게는 전자파 차폐용 금속패턴 형성에 사용되는 카도(Cado) 관능기와 카르복시산 관능기를 갖는 공중합체 수지 및 플루오르화 은이온 유기착화물을 포함하는 전자파 차폐용 촉매 전구체 수지 조성물, 이를 이용한 금속패턴 형성방법, 이에 따라 형성된 금속패턴 및 금속패턴을 포함하는 부품 및 소자에 관한 것이다.The present invention relates to a catalyst precursor resin composition used to form a metal pattern, a method of forming a metal pattern using the same, and a metal pattern and a component and a device including the metal pattern formed accordingly. More specifically, a catalyst precursor resin composition for electromagnetic wave shielding comprising a copolymer resin having a cardo functional group and a carboxylic acid functional group used to form a metal pattern for electromagnetic wave shielding and a fluorinated silver ion organic complex, and forming a metal pattern using the same The present invention relates to a method, a metal pattern formed thereby, and a component and a device including the metal pattern.
최근 다양한 방식의 디스플레이가 상용화되면서 이러한 디스플레이로부터 발생되는 전자기적인 노이즈(Noise)의 방해현상 (Electronmagnetic Interference:EMI)으로 인한 인체의 유해성 및 기기의 오작동 등이 큰 문제점으로 대두되고 있다. 이러한 문제를 해결하기 위하여 디스플레이의 전면에 도전성 차폐(Shielding)막을 형성하여 전자파의 진행방향을 왜곡시킨 후, 접지하여 방출시키는 방법이 사용되고 있다.Recently, as various types of displays have been commercialized, the harmful effects of the human body and the malfunction of the devices due to electromagnetic interference (EMI) generated from such displays have emerged as major problems. In order to solve this problem, a conductive shielding film is formed on the front of the display to distort the traveling direction of the electromagnetic wave, and then grounded and emitted.
CRT, PDP 등의 디스플레이 전면으로부터 발생되는 전자파 노이즈의 차폐 방법으로서, 투명성 기재상에 금속 또는 금속 산화물을 증착하고 얇은 도전성 막을 형성하는 방법이 알려져 있으나, 이러한 방법은 투명성을 제공하기 위해 막을 얇게 증착해야 하며, 이러한 경우에는 도전층의 표면 저항이 너무 커지기 때문에 충분한 전차파 차폐 효과를 얻을 수 없다. As a method of shielding electromagnetic noise generated from the front surface of a display such as a CRT or PDP, a method of depositing a metal or metal oxide on a transparent substrate and forming a thin conductive film is known. However, such a method requires that a thin film be deposited to provide transparency. In this case, sufficient electric wave shielding effect cannot be obtained because the surface resistance of the conductive layer becomes too large.
가장 일반적으로 사용되는 방법은 금속 호일 에칭(Metal foil etching) 방식으로, 투명기재 위에 동박을 점착하고 노광공정을 하여 포토레지스트 패턴을 얻고, 동박을 식각하여 구리 패턴을 형성하는 것이다. 그러나, 이 방법은 공정이 길고 복잡하며, 많은 양의 금속 폐기물이 발생하므로 친화경적이지 못하다. 또한 공정상 구리패턴의 교점살찜이 필연적인 문제가 되고 있다. The most commonly used method is metal foil etching, in which copper foil is adhered on a transparent substrate and subjected to an exposure process to obtain a photoresist pattern, and copper foil is formed by etching copper foil. However, this method is not affinity, because the process is long and complex, and a large amount of metal waste is generated. In addition, the intersection of the copper pattern in the process is inevitable problem.
상기와 같은 방법 이외에도 스크린 프린팅, 오프셋 프린팅 등의 프린팅 방식으로 도전성 페이스트를 패턴하고 이를 다시 무전해 또는 도금 처리하여 전자파 차폐막을 형성하는 것이 보고되고 있으나, 이러한 경우에는 인쇄회로의 정밀도에 한 계가 있고, 요철 부분으로 도전성 물질들이 스며드는 문제 등이 있다. In addition to the above method, it has been reported to form the electromagnetic shielding film by patterning the conductive paste by electroless or plating treatment by printing method such as screen printing and offset printing, but in this case, there is a limit to the precision of the printed circuit, There is a problem that conductive materials seep into the uneven portion.
또한, 사진 현상방법으로 금속층을 형성하고 도금 또는 무전해 도금 처리하는 방법이 제시되어 있으나, 사진 현상방법은 여러층이 필요하고 공정이 복잡한 단점이 있다. 한편, 금속 촉매를 감광성 수지에 혼합하고 현상한 후, 무전해 도금 및 전해 도금을 행하는 것이 보고되고 있으며, 이러한 방법은 패턴 특성이 우수하고, 미세한 패턴을 형성할 수 있으나, 촉매로 고가의 Pd가 사용되며, 강염기 수용액에서의 패턴탈착 등, 무전해 도금시 수반되는 문제에 대한 해결방법들이 구체적으로 제시되어 있지 않다. In addition, a method of forming a metal layer and plating or electroless plating by a photo developing method has been proposed. However, the photo developing method requires several layers and has a complicated process. On the other hand, it has been reported that after the metal catalyst is mixed with the photosensitive resin and developed, electroless plating and electroplating are performed. Such a method has excellent pattern characteristics and can form fine patterns. The solution to the problems associated with electroless plating, such as pattern desorption in a strong base aqueous solution, is not specifically presented.
이에, 본 발명자들은 상기와 같은 종래기술의 문제점을 해결하기 위해 많은 연구를 진행한 결과 특정한 촉매 전구체 및 특정한 수지를 포함하는 조성물을 사용하므로써 상기 문제를 해결할 수 있음을 발견하고 본 발명을 완성하였다. Accordingly, the present inventors have found that the above problems can be solved by using a composition containing a specific catalyst precursor and a specific resin as a result of many studies to solve the problems of the prior art.
본 발명의 목적은 패턴 특성이 우수하고, 미세패턴의 형성이 가능하고, 현상, 무전해 도금등의 습식공정시 촉매의 유실이 적고, 내화학성, 접착성 및 증착성이 우수한 촉매 전구체 수지 조성물을 제공하는 것이다. SUMMARY OF THE INVENTION An object of the present invention is to provide a catalyst precursor resin composition having excellent pattern characteristics, capable of forming a fine pattern, less loss of catalyst during wet processes such as development and electroless plating, and excellent chemical resistance, adhesion, and deposition resistance. To provide.
본 발명의 다른 목적은 상기 촉매 전구체 수지 조성물을 이용한 금속 패턴의 형성 방법을 제공하는 것이다. Another object of the present invention is to provide a method of forming a metal pattern using the catalyst precursor resin composition.
본 발명의 또 다른 목적은 본 발명의 방법으로 형성된 금속패턴을 제공하는 것이다. Another object of the present invention is to provide a metal pattern formed by the method of the present invention.
나아가, 본 발명의 또 다른 목적은 본 발명의 방법으로 형성된 금속패턴을 포함하는 부품, 소자, 전자파 차폐재 또는 연성 회로 기판을 제공하는 것이다. Furthermore, another object of the present invention is to provide a component, an element, an electromagnetic shielding material or a flexible circuit board comprising a metal pattern formed by the method of the present invention.
본 발명의 일 견지에 의하면,According to one aspect of the invention,
(a) 카르복시산 관능기 및 카도(Cado) 관능기를 갖는 공중합체 수지, (a) a copolymer resin having a carboxylic acid functional group and a cardo functional group,
(b) 플루오르화 은이온 유기 착화물 전구체, (b) fluorinated silver ion organic complex precursors,
(c) 다관능성 에틸렌계 불포화 결합을 갖는 단량체,(c) a monomer having a polyfunctional ethylenically unsaturated bond,
(d) 광개시제, 및 (d) photoinitiators, and
(e) 유기용매를 포함하는 금속 패턴 형성용 촉매 전구체 수지 조성물이 제공된다. (e) The catalyst precursor resin composition for metal pattern formation containing an organic solvent is provided.
본 발명의 다른 견지에 의하면, According to another aspect of the present invention,
(a) 본 발명에 의한 촉매 전구체 수지 조성물을 이용하여 기재에 촉매 전구체 패턴을 형성하는 단계; (a) forming a catalyst precursor pattern on a substrate using the catalyst precursor resin composition according to the present invention;
(b) 형성된 촉매 전구체 패턴을 환원시켜 촉매패턴을 형성하는 단계; 및 (b) reducing the formed catalyst precursor pattern to form a catalyst pattern; And
(c) 상기 촉매패턴에 무전해 도금하는 단계를 포함하는 금속 패턴 형성방법이 제공된다. (C) there is provided a metal pattern forming method comprising the step of electroless plating on the catalyst pattern.
본 발명의 또 다른 견지에 의하면, According to another aspect of the present invention,
상기 본 발명에 의한 방법으로 형성된 금속패턴이 제공된다. A metal pattern formed by the method according to the present invention is provided.
나아가, 본 발명의 또 다른 견지에 의하면, Furthermore, according to another aspect of the present invention,
상기 본 발명에 의한 방법으로 형성된 금속패턴을 포함하는 부품, 소자, 전 자파 차폐재 또는 연성회로 기판이 제공된다. A component, an element, an electromagnetic wave shield, or a flexible circuit board including a metal pattern formed by the method according to the present invention is provided.
본 발명의 촉매 전구체 수지 조성물을 사용하여 금속패턴을 형성하므로써, 형성된 촉매막의 접착성이 우수하며, 현상 또는 도금공정과 같은 습윤공정 중의 촉매유실이 적고, 증착속도가 향상되어 무전해 도금후 균일하고 미세한 금속패턴이 형성된다. 본 발명의 금속패턴 제조방법은 CRT, PDP, 액정, EL 등의 디스플레이 전면으로부터 발생되는 전자파 차폐막(차폐재)이나 연성 회로 기판의 배선 형성에 사용될 수 있다. By forming a metal pattern using the catalyst precursor resin composition of the present invention, the adhesion of the formed catalyst film is excellent, there is little catalyst loss during the wetting process such as development or plating process, and the deposition rate is improved to be uniform after electroless plating. A fine metal pattern is formed. The metal pattern manufacturing method of the present invention can be used to form wirings of electromagnetic shielding films (shielding materials) or flexible circuit boards generated from the front surface of displays such as CRT, PDP, liquid crystal, and EL.
이하, 본 발명에 대하여 보다 상세히 설명한다. Hereinafter, the present invention will be described in more detail.
본 발명자들은 공정이 단순하고, 미세한 금속 패턴이 형성 가능하고, 패턴 특성이 매우 우수한 금속 배선 형성방법을 연구한 결과, 카르복시산 관능기와 카도 관능기를 포함하는 공중합체 고분자 수지 및 플루오르화 은이온 유기 착화물을 포함하는 촉매 전구체 수지조성물을 사용하므로써 촉매 전구체 수지 조성물 및 금속 패턴 형성 공정에서 내화학성, 접착성, 증착성, 저장성 및 안정성이 개선됨을 발견하였다. 즉, 본 발명의 촉매 전구체 수지조성물은 내화학성이 우수하여 강염기를 사용하는 무전해 도금등의 습식공정에서도 안정한 패턴을 얻을 수 있고, 형성된 촉매층의 접착성이 우수하며, 현상 또는 도금공정과 같은 습윤공정 중의 촉매 유실이 적어 증착속도가 향상되고, 촉매 전구체가 유기용매 및 수지와의 혼화성(compatibility)이 우수하여 침전이 발생하지 않고, 안정성이 우수하며 따라서, 우수한 패턴성을 나타내고 무전해 도금에 의해 균일한 미세 금속패턴이 형성된다. The inventors of the present invention have studied a method for forming a metal wiring with a simple process, a fine metal pattern, and excellent pattern characteristics. As a result, a copolymer polymer resin and a fluorinated silver ion complex containing a carboxylic acid functional group and a cardo functional group have been studied. By using the catalyst precursor resin composition comprising a chemical resistance, adhesion, deposition, storage and stability in the catalyst precursor resin composition and metal pattern formation process was found to be improved. That is, the catalyst precursor resin composition of the present invention is excellent in chemical resistance and can obtain a stable pattern even in wet processes such as electroless plating using strong bases, and excellent adhesion of the formed catalyst layer, and wetness such as development or plating process. Less catalyst loss during the process improves the deposition rate, and the catalyst precursor has excellent compatibility with the organic solvent and the resin so that precipitation does not occur, and thus the stability is excellent, thus showing excellent patternability and electroless plating. As a result, a uniform fine metal pattern is formed.
본 발명의 일 구현에 있어서, (a) 카르복시산 관능기와 카도(Cado) 관능기를 포함하는 공중합체 수지, (b) 플루오르화 은이온 유기 착화물 전구체, (c) 다관능성 에틸렌계 불포화 결합을 갖는 단량체, (d) 광개시제 및 (e) 유기용매를 포함하여 이루어지는 촉매 전구체 수지조성물이 제공된다. In one embodiment of the present invention, (a) a copolymer resin containing a carboxylic acid functional group and a cardo functional group, (b) a fluorinated silver ion organic complex precursor, (c) a monomer having a polyfunctional ethylenically unsaturated bond A catalyst precursor resin composition comprising (d) a photoinitiator and (e) an organic solvent is provided.
본 발명의 촉매 전구체 수지 조성물을 구성하는 유기고분자 수지, 즉, 공중합체 수지는 내화학성 및 촉매전구체의 유실을 최소하기 위하여 카르복시산 관능기와 카도(Cado) 관능기를 갖는 공중합체 수지가 사용된다. Organic polymer resin constituting the catalyst precursor resin composition of the present invention, that is, Copolymer resin In order to minimize chemical resistance and loss of the catalyst precursor, a copolymer resin having a carboxylic acid functional group and a cardo functional group is used.
상기 카르복시산 관능기와 카도 관능기를 갖는 공중합체 수지는 하기 카도(Cado) 관능기를 갖는 다이알코올 및/또는 다이아민과 다이산무수화물의 반응으로 합성될 수 있다. 카도(Cado) 관능기를 갖는 다이알코올 혹은 다이아민에서 알코올 또는 아민은 중합을 위한 관능기로 작용한다. 카도(Cado) 관능기를 갖는 다이알코올 및 다이아민의 예는 이로써 한정하는 것은 아니지만, 하기 화학식 1의 화합물을 들 수 있다. 하기 화학식 1의 카도 관능기를 갖는 다이알코올 및 다이아민 단량체는 단독으로 혹은 이종 이상이 함께 사용될 수 있다. 일반적으로 상기 단량체로는 9,9-비스(4-히드록시페닐)플로린의 페놀의 알코올과 에테르(ether) 혹은 에스테르(ester) 결합을 통해서 아민기나 알코올기를 도입한 어떠한 화합물이 사용될 수 있다. The copolymer resin having a carboxylic acid functional group and a cardo functional group may be synthesized by a reaction of a dialcohol and / or a diamine having a cado functional group and a diacid anhydride. Alcohols or amines in the dialcohol or diamine having a Cado functional group act as functional groups for the polymerization. Examples of dialcohols and diamines having a Cado functional group include, but are not limited to, compounds of the following formula (1). The dialcohol and diamine monomer having a cardo functional group of Formula 1 may be used alone or in combination of two or more. In general, as the monomer, any compound having an amine group or an alcohol group introduced through an ether or ester bond with an alcohol of phenol of 9,9-bis (4-hydroxyphenyl) florin may be used.
[화학식 1][Formula 1]
본 발명의 촉매 전구체 수지 조성물에 사용되는 공중합체 수지는 또한, 염기성 수용액(현상액)에 가용성을 부여하기 위하여 카르복실산 관능기를 갖는 것이어 야 한다. 카르복실산 관능기는 상기한 바와 같이 산무수화물을 카도(Cado) 관능기를 갖는 다이알코올 혹은 다이아민과 반응시키므로써 아미드 결합 혹은 에스테르 결합의 형성과 동시에 산이 형성되는 방법에 의해 공중합체 수지에 카르복시산기가 도입된다. 상기 산무수화물과 카도(Cado) 관능기를 갖는 다이알코올 혹은 다이아민의 반응에 의해 카도 관능기와 카르복시산 관능기를 갖는 공중합체가 형성되는 메커니즘을 하기 반응식 1 및 2에 나타내었다. The copolymer resin used in the catalyst precursor resin composition of the present invention must also have a carboxylic acid functional group to impart solubility to the basic aqueous solution (developer). As described above, the carboxylic acid group is reacted with a dialcohol or a diamine having a cado functional group to form an amide bond or an ester bond and an acid is formed, thereby forming a carboxylic acid group in the copolymer resin. Is introduced. The mechanism in which a copolymer having a cardo functional group and a carboxylic acid functional group is formed by the reaction of the acid anhydride and a dialcohol having a cardo functional group or a diamine is shown in
[반응식 1]
[반응식 2]Scheme 2
상기 산무수화물로는 다이산무수화물들이 사용될 수 있다. 산무수화물로는 상기 반응식 1 및 2의 산무수화물 화학식에서 R2에 따라 여러가지 다이산무수화물이 사용될 수 있으며, 이로 한정하는 것은 아니지만, 일반적으로 사용될 수 있는 다이산무수화물의 예는 하기 화학식 2와 같다. 이들 다이산무수화물은 단독으로 혹은 2종 이상이 함께 사용될 수 있다. 내화학성과 반응성 측면에서 바람직하게는 다이프탈산 무수화물 관능기를 갖는 것이 사용될 수 있다.Diacid anhydrides may be used as the acid anhydride. As the acid anhydride, various diacid anhydrides may be used according to R 2 in the acid anhydride formulas of
[화학식 2][Formula 2]
또한, 공중합체 수지 합성시, 다이산무수화물 및 카도 관능기를 갖는 다이알코올 혹은 다이아민 단량체외의 기타 단량체가 또한 추가로 포함될 수 있다. 바람직하게는 기재와의 흡착력 및 내화학성을 고려하여 기타 단량체로서 방향족 관능기를 갖는 다이알코올 혹은 다이아민이 사용될 수 있다. In addition, when synthesizing the copolymer resin, other monomers besides the dialcohol and the dialcohol or diamine monomer having a cardo functional group may also be further included. Preferably, a dialcohol or a diamine having an aromatic functional group may be used as the other monomer in consideration of the adsorptivity and chemical resistance with the substrate.
상기 카르복시실산 관능기와 카도 관능기를 갖는 공중합체 수지에서 카도 관능기를 갖는 다이알코올 및/또는 다이아민은 다이무수화물 100 몰(mol%)을 기준으로 110~150 몰, 바람직하게는 130~140 몰로 사용될 수 있다. 카도 관능기를 갖는 다이알코올 및/또는 다이아민이 다이산무수화물 100 몰에 대하여 110몰 미만이면, 중합 종결시 잔존하는 다이산무수화물 단량체 양이 많아지고, 150몰을 초과하면, 중합종결시 잔존하는 다이알코올 및/혹은 다이아민의 양이 많아지고 이들과 플루오르화 은이온 유기 착화물 전구체와의 상호작용으로 인하여 저장 안정성이 떨어진다.In the copolymer resin having a carboxylic acid functional group and a cardo functional group, a dialcohol and / or a diamine having a cardo functional group may be used in an amount of 110 to 150 moles, preferably 130 to 140 moles based on 100 moles (mol%) of a dihydrate. Can be. If the dialcohol and / or the diamine having a cardo functional group is less than 110 moles with respect to 100 moles of the diacid anhydride, the amount of the diacid anhydride monomer remaining at the end of the polymerization increases, and if it exceeds 150 moles, the residual diacid anhydride at the end of the polymerization Increasing amounts of dialcohols and / or diamines and poor storage stability due to their interaction with the silver fluoride organic complex precursor.
상기 공중합체 수지는 중량평균 분자량이 2,000~15,000, 바람직하게는 4,000~8,000인 것이 사용될 수 있다. 공중합체 수지의 중량평균분자량이 2,000 미만이면 현상시 경화가 좋지 않으므로 접착특성이 저하되고 미세패턴의 형상이 좋지 않으며, 분자량이 15,000을 초과하면 현상액의 용해도가 커져서 패턴 박막의 질이 떨어진다.The copolymer resin may have a weight average molecular weight of 2,000 to 15,000, preferably 4,000 to 8,000. If the weight average molecular weight of the copolymer resin is less than 2,000, the curing property is poor, so that the adhesive property is deteriorated and the shape of the micropattern is not good. If the molecular weight is more than 15,000, the solubility of the developer is increased and the quality of the pattern thin film is deteriorated.
상기 공중합체 수지는 산가가 90~300mg KOH/g, 바람직하게는 150~250mg KOH/g인 것이 촉매를 이용한 미세 패턴형성에 사용되기에 바람직한 것이다. 상기 공중합체 수지의 산가가 90mgKOH/g미만이면 알칼리 현상액에 대한 코팅박막의 용해도가 낮아 현상이 불량하게 되기 쉽고, 산가가 300mgKOH/g을 초과하면 용해도가 너 무 높아 단선이나 이탈등의 패턴 불량이 생기기 쉽다. The copolymer resin is preferably an acid value of 90 ~ 300mg KOH / g, preferably 150 ~ 250mg KOH / g to be used for fine pattern formation using a catalyst. If the acid value of the copolymer resin is less than 90mgKOH / g, the solubility of the coating thin film in the alkaline developer is low, the phenomenon is likely to be poor, and if the acid value exceeds 300mgKOH / g, solubility is too high, pattern defects such as disconnection or separation It is easy to occur.
상기 카르복시실산 관능기와 카도 관능기를 갖는 공중합체 수지는 플루오르화 은이온착화물과 혼화성이 우수하므로 상기 공중합체 수지와 플루오르화 은이온착화물을 포함하는 촉매 전구체 수지조성물은 우수한 저장성 및 안정성을 나타낸다. 상기 공중합체 수지는 현상성, 패턴 특성 및 내화학성이 또한 우수하므로 포말린 구리도금조와 같은 강염기 상태에서도 패턴의 형상이 균일하고 우수하게 형성되며, 촉매와의 상호작용으로 공정 도중 촉매의 탈착 또는 유실이 최소화되므로 본 발명의 촉매전구체 수지조성물로 형성된 패턴의 안정성이 또한, 우수하다.The carboxylic acid functional group and the cardo functional group Since the copolymer resin having excellent compatibility with the silver fluoride complex, the catalyst precursor resin composition containing the copolymer resin and the silver fluoride complex exhibits excellent storage and stability. Since the copolymer resin is also excellent in developability, pattern characteristics, and chemical resistance, the shape of the pattern is uniformly and excellently formed even in a strong base state such as a formalin copper plating bath. Since this is minimized, the stability of the pattern formed from the catalyst precursor resin composition of the present invention is also excellent.
본 발명의 촉매 전구체 수지 조성물을 구성하는 촉매로는 촉매의 안정성, 유기용매와의 혼화성, 패턴성, 현상 및 무전해 도금과 같은 습윤 공정에서의 촉매유실, 접착특성, 무전해시 도금특성 및 제조비용 측면에서 플루오르화 은이온 유기 착화물이 사용된다. Catalysts constituting the catalyst precursor resin composition of the present invention include catalyst stability, miscibility with organic solvents, pattern loss, catalyst loss in wet processes such as development and electroless plating, adhesion characteristics, electroless plating characteristics, and In terms of manufacturing cost, fluorinated silver ion organic complexes are used.
촉매로서 은입자를 사용하는 경우에는 조성물내에 촉매를 균일하게 분산시키는 것이 어렵고, 응집이 발생할 확률이 높으므로 조성물에 계면활성제와 같은 안정제를 첨가하여야 한다. 또한, 은입자를 과량으로 사용하는 경우에는 현상성이 저하되어 미세 촉매패턴층을 형성하기 어렵고 또한, 접착특성이 저하될 수 있다. In the case of using silver particles as a catalyst, it is difficult to uniformly disperse the catalyst in the composition, and since the aggregation is likely to occur, a stabilizer such as a surfactant should be added to the composition. In addition, when the silver particles are used in an excessive amount, developability is reduced, making it difficult to form a fine catalyst pattern layer, and adhesion properties may be reduced.
무기 은염은 수용액에 용해되어 현상이나 무전해 도금시 유실될 수 있으며, 유기용매 및 수지와의 혼화성(compatibility), 무전해 도금의 증착특성 및 촉매패턴층의 접착특성이 저하될 수 있다. The inorganic silver salt may be dissolved in an aqueous solution and may be lost during development or electroless plating, and may have poor compatibility with an organic solvent and a resin, deposition characteristics of an electroless plating, and adhesion characteristics of a catalyst pattern layer.
은이온 유기 착화물는 유기용매와의 혼화성(compatibility)이 불충분하므로 촉매패턴을 형성하기 위한 조성물의 안정성이 저하될 수 있으며, 따라서, 촉매패턴 형성시 균일하게 코팅되지 않고 균일한 미세 촉매패턴으로 형성되기 어려운 문제가 있다. 따라서, 본 발명의 촉매전구체 수지 조성물에서는 촉매 전구체 물질로서, 안정성, 접착성, 증착성이 우수한 플루오르화 은이온 유기 착화물이 사용된다.Since the silver ion organic complex has insufficient compatibility with the organic solvent, the stability of the composition for forming the catalyst pattern may be deteriorated. Therefore, when the catalyst pattern is formed, the silver ion organic complex is not uniformly coated but formed as a uniform fine catalyst pattern. There is a difficult problem. Therefore, in the catalyst precursor resin composition of the present invention, a fluorinated silver ionic organic complex having excellent stability, adhesion, and deposition property is used as the catalyst precursor material.
또한, 플루오르화 은이온 유기 착화물은 유기용매와의 혼화성이 보다 우수하므로 촉매 전구체 수지 조성물이 안정하고, 매우 우수한 촉매 형상 패턴으로 형성되고 또한 물에 대한 용해도가 낮으므로 습식공정에서 촉매의 손실이 잘 발생하지 않는 것으로 여겨진다. 뿐만 아니라 염기성 수용액인 무전해 도금용액에서 수지 조성물중 촉매 전구체와 기재의 흡착력이 증대되므로 균일하고 우수한 증착막을 얻을 수 있다. In addition, since the silver fluoride ion complex is more compatible with the organic solvent, the catalyst precursor resin composition is stable, has a very good catalyst-like pattern, and has low solubility in water. This does not seem to happen well. In addition, since the adsorption power of the catalyst precursor and the substrate in the resin composition is increased in the electroless plating solution which is a basic aqueous solution, a uniform and excellent deposition film can be obtained.
본 발명의 수지 조성물에 사용될 수 있는 플루오르화 은이온 유기 착화물로는, 이로써 제한하는 것은 아니나, 크게 플루오르화 은아세테이트계, 플루오르화 은설폰네이트계, 플루오르화 β-카르보닐케톤계 실버(I)착화물 및 플루오르화 β- 카르보닐에스테르계 실버(I)착화물을 포함하며, 이로부터 선택된 플루오르화 은이온 유기착화물이 일종 혹은 2종 이상이 함께 사용될 수 있다.The fluorinated silver ion organic complex which can be used in the resin composition of the present invention is not limited thereto, but is largely silver fluoride acetate, fluorinated silver sulfonate, fluorinated β-carbonyl ketone silver (I A) complexes and fluorinated β-carbonyl ester-based silver (I) complexes, and one or two or more kinds of fluorinated silver ion organic complexes selected therefrom may be used together.
구체적으로는 은(I)플루오르설페이트, 은(I)트리플루오르아세테이트, 은(I)트리플루오르메탄술페이트, 은(I)펜타플루오르프로피온네이트, 은(I)헵타플루오르부티레이트 등을 들 수 있다. Specifically, silver (I) fluorosulfate, silver (I) trifluoroacetate, silver (I) trifluoromethane sulfate, silver (I) pentafluoropropionate, silver (I) heptafluorobutyrate, etc. are mentioned.
상기 플루오르화된 은이온 유기 착화물의 예로는 이로써 한정하는 것은 아니지만, 1,5-사이클로옥타다이엔-헥사플루오르아세틸아세토네이토실버(I) 착화물, 1,1,1-트리플루오르-2,4-펜탄다이온나토실버(I)착화물, 5,5-다이메틸-1,1,1-트리플루오르-2,4-헥산다이온네이토실버(I)착화물, 1-(4-메톡시페닐)-4,4,4-트리플루오르부탄다이온네이토실버(I)착화물, 5,5,6,6,7,7,8,8,9,9,10,10,11,11,12,12,12-헵타데카플루오르데칸-2,4-다이온네이토실버(I)착화물 1,1,1,2,2,3,3-헵타플루오르-7,7-다이메틸-4,6-옥탄다이온네이토실버(I)착화물, 1,1,1,3,5,5,5-헵타플루오르펜탄-2,4-다이온네이토실버(I)착화물, 1,1,1,5,5,5-헥사플루오르펜탄-2,4-다이온네이토실버(I)착화물, 5,5,6,6,7,7,8,8,8-노나플루오르옥탄-2,4-다이온네이토실버(I)착화물, 5H,5H-퍼플루오르노난-4,6-다이온네이토실버(I)착화물, 6H,6H-퍼플루오르-운데칸-5,7-다이온네이토실버(I)착화물, 8H,8H-퍼플루오르펜타데칸-7,8-다이온네이토실버(I)착화물, 6H,6H-퍼플루오르운데칸-5,7-다이온네이토실버(I)착화물, 1-페닐-2H,2H-퍼플루오르헥산-1,3-다이온네이토실버(I)착화물, 1-페닐-2H,2H-퍼플루오르운 데칸-1,3-다이온네이토실버(I)착화물, 5,6,6,6-테트라플루오르-5-(헵타플루오르프로폭시)헥산-2,4-다이온네이토실버(I)착화물, 1,1,5,5-테트라플루오르펜탄-2,4 다이온네이토실버(I)착화물, 5,5,6,6,7,7,8,8,9,9,9-운데칸플루오르-노난-2,4-다이온네이토실버(I)착화물, 에틸 3-클로로-4,4,4-트리플루오르아세토아세테이토실버(I)착화물, 에틸-4,4-디플루오르아세토아세테이토실버(I)착화물, 에틸-4,4,4-트리플루오르아세토아세테이토실버(I)착화물, 이소프로필-4,4,4-트리플루오르아세토아세테이토실버(I)착화물, 메틸-4,4,5,5,5-펜타플루오르-3-옥소펜타노네이토실버(I)착화물, 에틸-4,4,5,5,5-펜타플루오르-3-옥소-펜타노네이토실버(I)착화물 및 1,1,1,5,5,6,6,6-옥타플루오르-2,4-헥산다이오네이토실버(I)착화물등을 들 수 있다. 상기 플루오르화된 은이온 착화물은 단독으로 혹은 이종 이상의 혼합물로 함께 사용될 수 있다. Examples of such fluorinated silver ion organic complexes include, but are not limited to, 1,5-cyclooctadiene-hexafluoroacetylacetonatosilver (I) complexes, 1,1,1-trifluoro-2, 4-pentanedionenatosilver (I) complex, 5,5-dimethyl-1,1,1-trifluoro-2,4-hexanedionenetosilver (I) complex, 1- (4- Methoxyphenyl) -4,4,4-trifluorobutanedionenetosilver (I) complexes, 5,5,6,6,7,7,8,8,9,9,10,10,11 , 11,12,12,12-heptadecafluordecane-2,4-dionenatosilver (I) complex 1,1,1,2,2,3,3-heptafluoro-7,7-di Methyl-4,6-octanedionenetosilver (I) complex, 1,1,1,3,5,5,5-heptafluoropentane-2,4-dionenetosilver (I) complex , 1,1,1,5,5,5-hexafluoropentane-2,4-dionenatosilver (I) complex, 5,5,6,6,7,7,8,8,8- Nonafluorooctane-2,4-dione-natosilver (I) complex, 5H, 5H-perfluorononane-4,6-dione-natosilver (I) complex, 6H, 6H-perflu Le-Undecan-5,7-dione-natosilver (I) complex, 8H, 8H-perfluoropentadecan-7,8-dione-natosilver (I) complex, 6H, 6H-perfluor Undecane-5,7-dionenetosilver (I) complex, 1-phenyl-2H, 2H-perfluorohexane-1,3-dionenetosilver (I) complex, 1-phenyl-2H , 2H-perfluoro decane-1,3-dionenatosilver (I) complex, 5,6,6,6-tetrafluoro-5- (heptafluoropropoxy) hexane-2,4-dione Neatosilver (I) complexes, 1,1,5,5-tetrafluoropentane-2,4 dioneneatosilver (I) complexes, 5,5,6,6,7,7,8,8 , 9,9,9-Undecanefluoro-nonane-2,4-dionenatosilver (I) complex, ethyl 3-chloro-4,4,4-trifluoroacetoacetotosilver (I) complex Water, ethyl-4,4-difluoroacetoacetotosilver (I) complex, ethyl-4,4,4-trifluoroacetoacetotosilver (I) complex, isopropyl-4,4,4 Trifluoroacetoacetotosilver (I) complexes, methyl-4,4,5,5,5-pentaplu Le-3-oxopentanonate silver (I) complexes, ethyl-4,4,5,5,5-pentafluoro-3-oxo-pentanonate silver (I) complexes and 1,1,1, And 5,5,6,6,6-octafluoro-2,4-hexanedionetosilver (I) complexes. The fluorinated silver ion complexes may be used alone or in combination of two or more.
본 발명의 촉매 전구체 수지 조성물중 상기 플루오르화 은이온 유기착화물은 전체 유기 고형분 100중량부에 대하여 2~40중량부, 바람직하게는, 5~20중량부로 사용될 수 있다. 본 발명의 수지 조성물에서 플루오르화 은이온 유기착화물의 함량이 2중량부 미만이면 촉매의 양이 충분하지 않아 무전해 도금시 금속의 증착속도가 현저하게 느리고, 촉매패턴상에 균일한 금속박막이 형성되기 어렵다. 반면 플루오르화 은이온 유기착화물의 양이 40중량부를 초과하면, 조성물의 저장성, 촉매 패턴의 현상성 및 접착특성이 저하되어 균일한 미세 촉매 패턴을 형성하기 어려울 뿐만 아니라, 촉매패턴위에 미세 금속박막을 형성하기 곤란해진다. 상기 '전체 유기 고형 분'이란 본 발명의 촉매 전구체 수지조성물에 포함되는 유기고분자 수지, 은이온 유기착화물 전구체 및 기타 필요에 따라 첨가되는 유기물등을 포함하는 촉매 전구체 수지 조성물중의 어떠한 유기 고형분을 의미한다. In the catalyst precursor resin composition of the present invention, the fluorinated silver ion organic complex may be used in an amount of 2 to 40 parts by weight, preferably 5 to 20 parts by weight, based on 100 parts by weight of the total organic solids. In the resin composition of the present invention, if the content of the silver fluoride ion complex is less than 2 parts by weight, the amount of the catalyst is not sufficient, and the deposition rate of the metal is significantly slowed during electroless plating, and a uniform metal thin film is formed on the catalyst pattern. It's hard to be. On the other hand, when the amount of the silver fluoride ion complex is more than 40 parts by weight, the storage properties of the composition, the developability of the catalyst pattern, and the adhesion properties are reduced, making it difficult to form a uniform fine catalyst pattern, and also forming a fine metal thin film on the catalyst pattern. It becomes difficult to form. The term 'total organic solids' refers to any organic solids in the catalyst precursor resin composition including an organic polymer resin, a silver ion organic complex precursor, and other organic substances added as required in the catalyst precursor resin composition of the present invention. it means.
본 발명의 촉매 전구체 수지 조성물을 구성하는 다관능성 에틸렌계 불포화 결합을 갖는 단량체는 광경화를 촉진하고 현상성을 향상시키며, 무전해 도금시 촉매 형성막의 접착성, 내화학성등이 향상되도록 사용된다. The monomer having a polyfunctional ethylenically unsaturated bond constituting the catalyst precursor resin composition of the present invention is used to promote photocuring and improve developability, and to improve adhesion, chemical resistance, etc. of the catalyst forming film during electroless plating.
상기 다관능성 에틸렌계 불포화 결합을 갖는 단량체의 예로는, 이로써 한정하는 것은 아니지만, 에틸렌글리콜디아크릴레이트, 에틸렌글리콜디메타크릴레이트, 에틸렌기의 수가 2~14인 폴리에틸렌글리콜 디아크릴레이트, 또는 폴리에틸렌글리콜 디메타아크릴레이트, 트리메틸올프로판트리아크릴레이트, 트리메틸올프로판트리메타크릴레이트, 펜타에리스리톨 트리아크릴레이트, 펜타에리스리톨 트리메타크릴레이트, 펜타에리스리톨 테트라아크릴레이트, 펜타에리스리톨 테트라메타크릴레이트, 프로필렌기의 수가 2~14인 프로필렌글리콜디아크릴레이트, 또는 프로필렌글리콜디메타크릴레이트, 디펜타에리스리톨펜타아크릴레이트, 디펜타에리스리톨 펜타메타크릴레이트, 디펜타에리스리톨헥사아크릴레이트, 디펜타에리스리톨헥사메타크릴레이트 등의 다가 알코올과 α,β-불포화 카르복실산을 에스테르화하여 얻어지는 화합물; 트리메틸올프로판 트리글리시딜에테르아크릴산 부가물, 비스페놀 A 디글리시딜에테르아크릴산 부가물등의 글리시딜기를 함유하는 화합물에 아크릴산 또는 메타아 크릴을 부가하여 얻어지는 화합물; β-히드록시에틸아크릴레이트 또는 β-히드록시에틸메타크릴레이트의 프탈산에스테르와 같은 수산화기 또는 에틸렌성 불포화 결합을 갖는 화합물과 다가 카르복실산과의 에스테르 화합물; β-히드록시에틸 아크릴레이트 또는 β-히드록시에틸메타크릴레이트의 톨루엔디이소시아네이트 부가물과 같이 수산화기 또는 에틸렌성 불포화 결합을 갖는 화합물과 같은 다가(multi) 폴리이소시아네이트와의 부가물 등을 들 수 있다. 상기 다관능성 에틸렌계 불포화 결합(multi-functional ethylenically unsaturated bond)을 갖는 단량체는 단독으로 혹은 이종 이상의 혼합물로 사용될 수 있다. Examples of the monomer having a polyfunctional ethylenically unsaturated bond include, but are not limited to, ethylene glycol diacrylate, ethylene glycol dimethacrylate, polyethylene glycol diacrylate having 2 to 14 ethylene groups, or polyethylene glycol Dimethacrylate, trimethylolpropane triacrylate, trimethylolpropane trimethacrylate, pentaerythritol triacrylate, pentaerythritol trimethacrylate, pentaerythritol tetraacrylate, pentaerythritol tetramethacrylate, and the number of propylene groups 2-14 propylene glycol diacrylate or propylene glycol dimethacrylate, dipentaerythritol pentaacrylate, dipentaerythritol pentamethacrylate, dipentaerythritol hexaacrylate, dipentaerythritol hexamethacrylate A compound of a polyhydric alcohol and an α, β- unsaturated carboxylic acid obtained by esterification; Compounds obtained by adding acrylic acid or methacryl to a compound containing glycidyl groups such as trimethylolpropane triglycidyl ether acrylic acid adduct and bisphenol A diglycidyl ether acrylic acid adduct; ester compounds of a polyhydric carboxylic acid with a compound having a hydroxyl group or an ethylenically unsaturated bond such as phthalic acid ester of β-hydroxyethyl acrylate or β-hydroxyethyl methacrylate; and adducts with multi-polyisocyanates such as compounds having hydroxyl groups or ethylenically unsaturated bonds, such as toluene diisocyanate adducts of β-hydroxyethyl acrylate or β-hydroxyethyl methacrylate. . The monomer having the multi-functional ethylenically unsaturated bond may be used alone or in mixture of two or more thereof.
상기 다관능성 에틸렌계 불포화 결합 함유 단량체는 에틸렌성 불포화 결합을 갖는 관능기수가 2이상인 것이 미세 촉매패턴의 형상 및 무전해 도금시 내화학성 및 접착성 면에서 바람직하다. The polyfunctional ethylenically unsaturated bond-containing monomer is preferably two or more functional groups having an ethylenically unsaturated bond in terms of the shape of the fine catalyst pattern and chemical resistance and adhesion during electroless plating.
상기 다관능성 에틸렌계 불포화 결합 함유 단량체의 함량은 상기 공중합체 수지 100중량부에 대하여 20~150중량부 일 수 있다. 다관능성 에틸렌계 불포화 결합을 갖는 단량체의 함량이 20중량부 미만이면, 충분히 경화되지 않아, 촉매에 의한 미세 패턴 형성이 어렵고 무전해 도금시 용해 및 박리등의 불량이 발생할 수 있으며, 150중량부를 초과하면, 코팅성이 감소되고 내부까지 균일하게 경화되지 않아 미세 촉매 패턴을 형성하기 어렵다.The content of the multifunctional ethylenically unsaturated bond-containing monomer may be 20 to 150 parts by weight based on 100 parts by weight of the copolymer resin. If the content of the monomer having a polyfunctional ethylenically unsaturated bond is less than 20 parts by weight, it is not sufficiently cured, and it is difficult to form a fine pattern by a catalyst and defects such as dissolution and peeling may occur during electroless plating, and more than 150 parts by weight. In this case, it is difficult to form a fine catalyst pattern because the coating property is reduced and not uniformly cured to the inside.
본 발명의 촉매 전구체 수지 조성물을 구성하는 광개시제는 이 기술분야에서 사용가능한 것으로 일반적으로 알려져 있는 것이 사용될 수 있으며, 그 종류를 특히 제한하는 것으로 아니나, 예를들어, 아세토페논류, 벤조페논류, 미히라(Michler) 벤조일벤조에이트, α-아밀록심에스테르, 티옥산톤류 및 트리아진류로 구성되는 그룹으로부터 선택된 최소 일종의 광개시제가 사용될 수 있다. Photoinitiators constituting the catalyst precursor resin composition of the present invention can be used that is generally known to be usable in the art, it is not particularly limited to the kind, for example, acetophenones, benzophenones, US At least one kind of photoinitiator selected from the group consisting of Hiler benzoylbenzoate, α-amyloxime ester, thioxanthones and triazines can be used.
아세토페논류의 예로는 이로써 한정하는 것은 아니지만, 2-벤질-2(디메틸아미노)-1-[4-(4-모르폴리닐)페닐]-1-부타논)((2-Benzyl-2(dimethylamino)-1-[4-(4-morpholinyl)phenyl]-1-butanone, IRGACURE 369), α,α-디메톡시-α-페닐아세토페논(α,α-dimethoxy-α-phenylacetopheone, IRGACURE 651), IRGACURE 1300 (IRGACURE 369 (30wt%)+IRGACURE 651(70wt%)), 1-벤조일시클로-헥사놀(1-Benzoylcyclohexanol, IRGACURE 184), 2,2'-디메톡시-2-페닐-아세토페논(2,2'-Dimethoxy-2-phenyl-acetophenone, DMPA), 2,2-디에톡시아세토페논(2,2-diethoxyacetophenone, DEAP), 4-메틸메르캅토-α,α-디메틸-모르폴리노 아세토페논(4-Methylmercapto-α,α-dimethyl-morpholino acetophenone)을 포함할 수 있다. Examples of acetophenones include, but are not limited to, 2-benzyl-2 (dimethylamino) -1- [4- (4-morpholinyl) phenyl] -1-butanone) ((2-Benzyl-2 ( dimethylamino) -1- [4- (4-morpholinyl) phenyl] -1-butanone, IRGACURE 369), α, α-dimethoxy-α-phenylacetophenone (α, α-dimethoxy-α-phenylacetopheone, IRGACURE 651) , IRGACURE 1300 (IRGACURE 369 (30 wt%) + IRGACURE 651 (70 wt%)), 1-benzoylcyclo-hexanol (1-Benzoylcyclohexanol, IRGACURE 184), 2,2'-dimethoxy-2-phenyl-acetophenone ( 2,2'-Dimethoxy-2-phenyl-acetophenone (DMPA), 2,2-diethoxyacetophenone (DEAP), 4-methylmercapto-α, α-dimethyl-morpholino aceto It may include phenone (4-Methylmercapto-α, α-dimethyl-morpholino acetophenone).
상기 벤조페논류로는 이로써 한정하는 것은 아니지만, 1-페닐-1,2-프로판디온-2-0-벤조일옥심(1-Phenyl-1,2-Propanedione-2-O-benzoyloxime, PPO), 에타논, 1-[9-에틸-6-(2-메틸벤조일)-9H-카르바졸-3-일]-1-O-아세틸옥심(Ethanone, 1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazol-3-yl]-1-(O-acetyloxime)(CGI242)을 포함 할 수 있다. Examples of the benzophenones include, but are not limited to, 1-phenyl-1,2-propanedione-2-0-benzoyloxime (1-Phenyl-1,2-Propanedione-2-O-benzoyloxime, PPO), eta Non, 1- [9-ethyl-6- (2-methylbenzoyl) -9H-carbazol-3-yl] -1-O-acetyloxime (Ethanone, 1- [9-ethyl-6- (2-methylbenzoyl ) -9H-carbazol-3-yl] -1- (O-acetyloxime) (CGI242).
상기 티옥산톤류로는 이로써 한정하는 것은 아니지만, 2-클로로티오-잔탄(2-Chlorothio-xanthane) 및 2-이소프로필티오잔탄(2-isopropylthioxanthane)을 포함할 수 있다. The thioxanthones may include, but are not limited to, 2-chlorothio-xanthane and 2-isopropylthioxanthane.
상기 트리아진류로는 이로써 한정하는 것은 아니지만, 3-{4-[2,4-비스(트리클로로메틸)-s-트리아진-6-일]페닐티오}프로피온산(TPA)을 포함할 수 있다. The triazines may include, but are not limited to, 3- {4- [2,4-bis (trichloromethyl) -s-triazin-6-yl] phenylthio} propionic acid (TPA).
상기 광개시제는 상기 공중합체 수지 100 중량부에 대하여 1 내지 25 중량부, 바람직하게는 5~20 중량부로 사용될 수 있다. 광개시제 함량이 1중량부 미만이면 촉매패턴층이 형성되지 않으므로 바람직하지 않고, 25중량부를 초과하면 패턴의 정확성이 저하되므로 바람직하지 않다. The photoinitiator may be used in 1 to 25 parts by weight, preferably 5 to 20 parts by weight based on 100 parts by weight of the copolymer resin. If the content of the photoinitiator is less than 1 part by weight, the catalyst pattern layer is not formed, which is not preferable. If the content is more than 25 parts by weight, the accuracy of the pattern is lowered.
또한, 필요에 따라, 본 발명의 수지조성물에 광증감제가 상기 공중합체 수지와 광개시제의 혼합량 100중량부에 대하여 10중량부 이하, 바람직하게는 0.1-10 중량부로 사용될 수 있다. 광증감제 함량이 10중량부를 초과하면 패턴의 정확성이 저하되므로 바람직하지 않다.In addition, if necessary, the photosensitizer may be used in the resin composition of the present invention in an amount of 10 parts by weight or less, preferably 0.1-10 parts by weight, based on 100 parts by weight of the mixture of the copolymer resin and the photoinitiator. If the photosensitizer content exceeds 10 parts by weight, the accuracy of the pattern is lowered, which is not preferable.
광증감제 또한, 이 기술분야에서 사용가능한 것으로 일반적으로 알려져 있는 것이 사용될 수 있으며, 그 종류를 특히 제한하는 것으로 아니나, 예를들어, n-부틸아민, 트리에틸아민 및 트리-n-부틸포스파인으로 구성되는 그룹으로부터 선택된 최소 일종의 광증감제가 사용될 수 있다.Photosensitizers may also be used, which are generally known to be usable in the art, and are not particularly limited in their kind, for example n-butylamine, triethylamine and tri-n-butylphosphine At least one kind of photosensitizer selected from the group consisting of can be used.
본 발명의 촉매 전구체 수지 조성물을 구성하는 용매는 특별히 제한되지는 않으나, 예를들어, 메탄올, 에탄올, n-프로판올, 이소프로판올, 에틸렌글리콜, 프로필렌글리콜과 같은 알코올류; 아세톤, 메틸에틸케톤, 시클로헥사논, n-메틸-2-피롤리돈과 같은 케톤류; 톨루엔, 크실렌, 테트라메틸벤젠과 같은 방향족 탄화수소류; 셀로솔브, 메틸셀로솔브, 에틸셀로솔브, 3-메톡시프로필아세테이트, 프로필렌글리콜모노메틸에테르, 프로필렌글리콜 에틸에테르, 디프로필렌글리콜모노메틸에테르, 디프로필렌 글리콜에틸 에테르와 같은 글리콜에테르류; 에틸아세테이트, 부틸아세테이트, 셀로솔브아세테이트, 에틸셀로솔브아세테이트, 부틸셀로솔브아세테이트, 프로필렌글리콜모노메틸에테르아세테이트, 프로필렌글리콜에틸에테르 아세테이트와 같은 아세테이트류; N,N-다이메틸아세트아마이드, N,N-다이메틸포름아마이드, 아세토나이트라이드와 같은 아마이드류등으로 구성되는 그룹으로부터 선택된 최소 1종 이상이 사용될 수 있다. Although the solvent which comprises the catalyst precursor resin composition of this invention is not specifically limited, For example, Alcohol, such as methanol, ethanol, n-propanol, isopropanol, ethylene glycol, propylene glycol; Ketones such as acetone, methyl ethyl ketone, cyclohexanone and n-methyl-2-pyrrolidone; Aromatic hydrocarbons such as toluene, xylene and tetramethylbenzene; Glycol ethers such as cellosolve, methyl cellosolve, ethyl cellosolve, 3-methoxypropyl acetate, propylene glycol monomethyl ether, propylene glycol ethyl ether, dipropylene glycol monomethyl ether, dipropylene glycol ethyl ether; Acetates such as ethyl acetate, butyl acetate, cellosolve acetate, ethyl cellosolve acetate, butyl cellosolve acetate, propylene glycol monomethyl ether acetate, and propylene glycol ethyl ether acetate; At least one selected from the group consisting of N, N-dimethylacetamide, N, N-dimethylformamide, amides such as acetonitrile and the like can be used.
나아가, 상기 본 발명의 촉매 전구체 수지 조성물은 이로써 한정하는 것은 아니지만, 이 기술분야에 촉매전구체 수지 조성물 제조시 필요에 따라 일반적으로 사용될 수 있는 습윤제, 접착증진제등의 첨가제를 필요에 따라 추가로 포함할 수 있다. Further, the catalyst precursor resin composition of the present invention is not limited thereto, but may further include additives such as a wetting agent, an adhesion promoter, and the like, which can be generally used as needed in the art when preparing a catalyst precursor resin composition. Can be.
본 발명의 촉매 전구체 수지조성물에서 용매와 유기고분자 수지, 플루오르화 은이온 유기 착화물 전구체 및 기타 첨가성분의 혼합비는 특히 한정하는 것은 아니며, 전구체 수지조성물을 사용하여 기재에 코팅하고 그 후에 용매를 건조함에 있어서 효율적이고 우수한 촉매층을 형성할 수 있도록 이 기술분야에서 알려져 있는 일반적인 혼합비로 적합하게 혼합될 수 있는 것으로, 상기 촉매 전구체 수지 조성물의 고형분 함량을 특히 한정하는 것은 아니나, 상기 촉매 전구체 수지 조성물의 고형분 함량은 바람직하게는 10-50중량%일 수 있다. 고형분 함량이 50중량%를 초과하면, 점도가 높아져 균일하게 코팅되지 않으며, 고형분 함량이 10중량% 미만이면, 두께가 얇아져 박막의 기계적 강도가 떨어지게 되므로 바람직하지 않다. The mixing ratio of the solvent and the organic polymer resin, the fluorinated silver ion organic complex precursor and other additives in the catalyst precursor resin composition of the present invention is not particularly limited, and the substrate is coated with the precursor resin composition and then the solvent is dried. In order to form an efficient and excellent catalyst layer can be suitably mixed in a general mixing ratio known in the art, it does not particularly limit the solid content of the catalyst precursor resin composition, the solid content of the catalyst precursor resin composition The content may preferably be 10-50% by weight. If the solids content exceeds 50% by weight, the viscosity is not high uniformly coated, if the solids content is less than 10% by weight, it is not preferable because the thickness becomes thinner to decrease the mechanical strength of the thin film.
본 발명의 다른 구현에 있어서, 상기 본 발명에 의한 금속 촉매 전구체 수지 조성물을 이용한 금속 패턴 형성방법이 제공된다. 본 발명에 의해 금속패턴은 기재에 상기 본 발명의 금속 촉매 전구체 수지 조성물을 사용하여 패턴을 형성하여 촉매전구체층을 형성하고, 촉매를 환원시킨 다음에 무전해 도금하므로써 금속 패턴이 형성된다. In another embodiment of the present invention, a metal pattern forming method using the metal catalyst precursor resin composition according to the present invention is provided. According to the present invention, the metal pattern is formed on the substrate by using the metal catalyst precursor resin composition of the present invention to form a pattern to form a catalyst precursor layer, reducing the catalyst and then electroless plating the metal pattern.
본 발명에서 기재로는 투명성 전자파 차폐재를 제조하기 위하여 투명 기재를 사용하는 것이 바람직하며, 구체적으로, 이로써 한정하는 것은 아니지만, 유리, 폴 리카보네이트, 아크릴 수지, PET, TAC(Tri acetyl cellulose), 폴리염화비닐수지, 폴리아마이드 수지, 폴리이미드 수지, 에폭시계 수지등의 플리스틱 시트 또는 플리스틱 필름등이 사용될 수 있다. 기타 기재의 두께등은 이 기술분야에서 일반적인 것으로 특히 한정되지 않는다. In the present invention, it is preferable to use a transparent substrate in order to prepare a transparent electromagnetic shielding material, and specifically, but not limited thereto, glass, polycarbonate, acrylic resin, PET, tri acetyl cellulose (TAC), poly Plastic sheets or plastic films such as vinyl chloride resin, polyamide resin, polyimide resin, epoxy resin, and the like can be used. The thickness of the other substrate and the like are general in the art and are not particularly limited.
상기 기재에 본 발명에 의한 촉매 전구체 수지 조성물을 이용하여 촉매막 패턴을 형성한다. 촉매패턴은 노광 및 현상에 의한 패턴형성방법(포토리소그라피법), 오프셋 프린팅, 잉크젯 프린팅, 임프린트 또는 스크린프린팅법등이 사용될 수 있다. 매우 우수한 미세 금속 패턴으로 형성되는 노광 및 현상에 의한 패턴형성방법(포토리소그라피법)으로 패턴을 형성하는 것이 보다 바람직하다. The catalyst film pattern is formed in the said base material using the catalyst precursor resin composition which concerns on this invention. As the catalyst pattern, a pattern forming method (photolithography method) by exposure and development, offset printing, inkjet printing, imprint or screen printing, or the like may be used. It is more preferable to form a pattern by the pattern formation method (photolithography method) by exposure and image development formed by the very excellent fine metal pattern.
패턴을 형성하는 방법중 노광 및 현상하여 패턴을 형성(포토리소그라피법)하는 경우, 먼저 상기 기재에 본 발명의 수지 조성물을 도포하여 금속 촉매 전구체 수지막을 형성한다. 도포방법은 특별히 제한되지 않으며, 도포액의 특성이나 도포량에 따라 달라질 수 있다. 도포는, 이로써 한정하는 것은 아니지만, 예를들어, 롤 코팅, 그라비아 코팅, 딥 코팅, 바 코팅, 스프레이 코팅, 또는 스핀 코팅 등의 통상의 코팅방법으로 행할 수 있다. When the pattern is formed by exposure and development in the method of forming a pattern (photolithography method), first, the resin composition of the present invention is applied to the substrate to form a metal catalyst precursor resin film. The coating method is not particularly limited and may vary depending on the characteristics of the coating liquid or the coating amount. Although application | coating is not limited to this, For example, it can carry out by conventional coating methods, such as roll coating, gravure coating, dip coating, bar coating, spray coating, or spin coating.
그 후, 코팅된 금속 촉매 전구체 수지막을 노광 및 현상하여 촉매 전구체 패턴을 형성한다. 노광 및 현상 공정은 일반적으로 알려져 있는 방법으로 행할 수 있 다. 예를들어, 노광 공정에서는 노광패턴을 가지는 마스크를 이용하여 접촉 또는 비접촉 노광 방식으로 노광시킬 수 있다. 노광공정에서 광원으로는 할로겐 램프, 고압 수은등, 메탈 할라이드 램프등의 통상의 광원이 사용될 수 있다. 현상은 스프레이법 또는 침지법을 사용하여 행할 수 있다.Thereafter, the coated metal catalyst precursor resin film is exposed and developed to form a catalyst precursor pattern. The exposure and development steps can be carried out by generally known methods. For example, in the exposure process, a mask having an exposure pattern can be used for exposure in a contact or non-contact exposure method. As the light source in the exposure process, a conventional light source such as a halogen lamp, a high pressure mercury lamp, or a metal halide lamp may be used. The development can be performed using a spray method or a dipping method.
상기 촉매 전구체 패턴 형성은 또한, 상기한 바와 같이 오프셋프린팅, 잉크젯프린팅, 임프린트 또는 스크린프린팅의 방법으로 형성될 수 있다. 상기 형성된 촉매 전구체막 패턴은, 이로써 한정하는 것은 아니지만, 라인의 폭이 30㎛ 이하, 바람직하게는 20㎛ 이하인 것이 바람직하다. 또한 본 발명의 촉매 전구체 수지 조성물은 10㎛ 이하의 미세 패턴 형성에 충분히 적용가능하다. 노광 및 현상 공정 후, 패턴이 없는 공간의 비율(개구율)이 60%이상, 더욱 바람직하게는 70% 이상인 것이 적당하다. The catalyst precursor pattern formation may also be formed by the method of offset printing, inkjet printing, imprint or screen printing as described above. Although the formed catalyst precursor film pattern is not limited to this, It is preferable that the width | variety of a line is 30 micrometers or less, Preferably it is 20 micrometers or less. In addition, the catalyst precursor resin composition of the present invention is sufficiently applicable to fine pattern formation of 10 μm or less. After the exposure and development processes, it is appropriate that the ratio (opening ratio) of the space without a pattern is 60% or more, more preferably 70% or more.
상기와 같이 촉매 전구체 패턴을 형성한 후에 무전해 도금 특성을 향상시키기 위하여 플루오르화 은이온 유기 착화물 전구체를 환원시켜 촉매 패턴이 되도록 한다. 플루오르화 은이온 유기착화물 전구체는 종류에 따라, 무전해 도금시 무전해 도금 용액에 의해 자발적으로 환원될 수도 있으나, 무전해 도금용액에 의한 환원은 충분하지 못하므로, 이 경우에도 플루오르화 은이온 유기착화물 전구체의 환원공정을 필요로 한다. After forming the catalyst precursor pattern as described above, to improve the electroless plating property, the fluorinated silver ion organic complex precursor is reduced to become the catalyst pattern. The silver fluoride ion organic complex precursor may be spontaneously reduced by the electroless plating solution during electroless plating, depending on the type, but the reduction by the electroless plating solution is not sufficient, and in this case, the silver fluoride ion There is a need for a reduction process of an organic complex precursor.
상기 플루오르화 은이온 유기착화물 전구체의 환원은 이 기술분야에서 일반적으로 적용가능한 어떠한 방법으로 행할 수 있으며, 이로써 제한하는 것은 아니지만, 예를들어, 환원제를 사용하거나 열 및/또는 UV 노광으로 환원처리할 수 있다. 환원제를 사용하는 경우, 이 기술분야에 일반적으로 알려져 있는 어떠한 환원제가 사용될 수 있으며, 이로써 한정하는 것은 아니지만, 예를들어, 소듐보레인하이드라이드(NaBH4)나 아스코르브산(Ascorbic acid) 수용액을 사용할 수 있다. The reduction of the silver fluoride ion complex complex precursor may be carried out by any method generally applicable in the art, and is not limited thereto, for example, by using a reducing agent or by reducing heat and / or UV exposure. can do. In the case of using a reducing agent, any reducing agent generally known in the art may be used, but is not limited thereto. For example, an aqueous solution of sodium borane hydride (NaBH 4 ) or ascorbic acid may be used. Can be.
환원제 수용액은 약 0.01-1.0M의 농도인 것을 사용하는 것이 바람직하다. 환원제 수용액의 농도가 0.01M 미만이면 환원력이 충분하지 않아 은이온 유기착화물이 충분히 환원되지 않으며, 1.0M을 초과하는 경우에는 환원정도를 제어하기 어렵고 촉매 패턴막이 손상될 염려가 있다. 환원제 수용액은 스프레이 방식 또는 침지 방식으로 적용될 수 있다. It is preferable to use a reducing agent aqueous solution having a concentration of about 0.01-1.0 M. When the concentration of the reducing agent solution is less than 0.01M, the reducing power is not sufficient, and the silver ion organic complex is not sufficiently reduced. When the concentration of the reducing agent is more than 1.0M, it is difficult to control the degree of reduction and the catalyst pattern film may be damaged. The reducing agent aqueous solution may be applied by spray or dipping.
UV 노광 또는 열을 이용한 환원방법은 습식 공정이 아니므로 촉매의 유실 방지면에서 바람직하고, 특히, 본 발명에 의한 플루오르화 은이온 유기 착화물의 경우에는 UV 노광에 의하여 촉매가 활성화되므로 UV노광에 의한 환원이 더욱 바람직하다.UV exposure or reduction using heat is not a wet process and is preferable in terms of preventing the loss of the catalyst. Particularly, in the case of the silver fluoride ion complex according to the present invention, the catalyst is activated by UV exposure. Reduction is more preferred.
상기 촉매패턴층 형성시, 필요에 따라 촉매 전구체 수지 조성물의 코팅후에, 노광하기전에 전열경화 및/또는 현상한 후에 후열경화할 수 있으며, 이러한 공정은 이 기술분야에서 일반적이며, 필요에 따라 행할 수 있는 것으로 이로써 본 발명을 한정하는 것은 아니다. In the formation of the catalyst pattern layer, if necessary, after coating of the catalyst precursor resin composition, it may be post-heat curing after exposure and / or development after exposure, and such a process is common in the art, and may be performed as necessary. The present invention does not limit the present invention.
상기와 같이 본 발명에 의한 촉매 전구체 수지 조성물을 사용하여 기재에 촉매 전구체 패턴층을 형성하고 촉매전구체를 촉매로 환원시킨 후, 촉매패턴위에 무전해 도금하여 금속패턴을 형성한다. 무전해 도금은 특히 한정되는 것은 아니며, 이 기술분야에 일반적으로 알려져 있는 어떠한 무전해 도금 방법으로 행할 수 있다. 본 발명에서는 구리도금 또는 은도금을 행할 수 있으며, 가격 및 전자파 차폐 성능 측면에서 구리 도금하는 것이 바람직하다. As described above, after the catalyst precursor pattern layer is formed on the substrate using the catalyst precursor resin composition according to the present invention, the catalyst precursor is reduced with the catalyst, and the metal pattern is formed by electroless plating on the catalyst pattern. The electroless plating is not particularly limited and may be performed by any electroless plating method generally known in the art. In the present invention, copper plating or silver plating can be performed, and copper plating is preferable in view of cost and electromagnetic shielding performance.
무전해 구리도금은 예를들어, 종래 일반적으로 알려져 있는 도금액을 사용하여 행할 수 있으며, 이로써 한정하는 것은 아니지만, 예를들어, 황산동와 같은 금속 이온염, 포르말린 같은 환원제, EDTA 같은 착화제 및 미량의 기타 첨가제를 포함하는 공지의 도금액을 이용하여 행할 수 있다. Electroless copper plating may be carried out using, for example, a plating liquid which is generally known in the art, and is not limited thereto, for example, metal ion salts such as copper sulfate, reducing agents such as formalin, complexing agents such as EDTA, and traces of other It can carry out using the well-known plating liquid containing an additive.
상기 본 발명에 의한 방법으로 형성되는 금속패턴을 포함하는 최종 전자파 차폐막에서 촉매패턴층과 금속층의 총 두께는 도금욕의 금속염 또는 금속 이온 농도, 도금 온도, 증착 시간등에 의하여 제어할 수 있다. The total thickness of the catalyst pattern layer and the metal layer in the final electromagnetic shielding film including the metal pattern formed by the method according to the present invention can be controlled by the metal salt or metal ion concentration of the plating bath, plating temperature, deposition time and the like.
촉매패턴층 및/또는 금속층의 두께는 패턴의 폭등에 따라 다양하게 변할 수 있는 것으로 이 기술분야의 기술자는 필요에 따라 적합한 두께가 되도록 촉매패턴층 및/또는 금속층의 두께를 조절할 수 있는 것으로 이로써 한정하는 것은 아니지만, 촉매패턴층과 금속층의 총 두께는 0.3㎛ 이상, 바람직하게는 0.5 ㎛ 이상, 더욱 바람직하게는 1㎛ 이상, 보다 더 바람직하게는 1-8㎛일 수 있다. 촉매패턴층과 금속층의 총 두께가 0.3㎛미만이면, 기계적 강도가 충분하지 않고, 전도도가 충분하지 않아 차폐특성이 저하될 수 있다. 촉매패턴층과 금속층의 총 두께가 8㎛을 초과하면, 두께가 너무 두꺼워져서 후공정 처리에 바람직하지 않다. 또한, 상기 촉매패턴층과 금속층의 총 두께중 금속층의 두께는 전도도 및 전자파 차폐성 등을 고려하여 최소 0.1㎛(100㎚)인 것이 바람직하다. The thickness of the catalyst pattern layer and / or the metal layer may vary depending on the width of the pattern, and the person skilled in the art may adjust the thickness of the catalyst pattern layer and / or the metal layer to have a suitable thickness as necessary. Although not necessarily, the total thickness of the catalyst pattern layer and the metal layer may be 0.3 μm or more, preferably 0.5 μm or more, more preferably 1 μm or more, even more preferably 1-8 μm. When the total thickness of the catalyst pattern layer and the metal layer is less than 0.3 μm, the mechanical strength is not sufficient and the conductivity is not sufficient, so that the shielding property may be lowered. If the total thickness of the catalyst pattern layer and the metal layer exceeds 8 mu m, the thickness becomes so thick that it is not preferable for the post process treatment. In addition, the thickness of the metal layer of the total thickness of the catalyst pattern layer and the metal layer is preferably at least 0.1㎛ (100nm) in consideration of conductivity and electromagnetic shielding.
이와 같이, 본 발명에 따른 카르복시기와 카보기를 갖는 공중합체 수지 및 플루오르화 은이온 유기 착화물을 포함하는 촉매 전구체 수지 조성물을 사용하여 형성된 금속패턴은 촉매패턴층의 접착성이 우수하고, 현상 또는 도금공정과 같은 습윤공정중의 촉매 유실이 적고, 증착속도가 향상되어 무전해 도금으로 균일하고 미세한 금속패턴을 형성할 수 있다. As such, the metal pattern formed using the catalyst precursor resin composition comprising a copolymer resin having a carboxyl group and a carbohydrate and a fluorinated silver ion organic complex according to the present invention has excellent adhesion of the catalyst pattern layer, There is little catalyst loss during the wetting process, such as the plating process, and the deposition rate is improved to form a uniform and fine metal pattern by electroless plating.
상기 본 발명에 의한 방법으로 얻어진 금속패턴은 우수한 전자파 차폐능을 갖는 것으로, CRT, PDP, 액정, EL 등의 디스플레이 전면으로부터 발생되는 전자파 차폐재, 금속패턴을 포함하는 부품 또는 소자, 구체적으로는 PDP용 EMI 필름, 및 연성 회로 기판의 배선 형성등에 사용하기에 적합한 것이다. The metal pattern obtained by the method according to the present invention has excellent electromagnetic wave shielding ability, and an electromagnetic wave shielding material generated from the front surface of a display such as a CRT, a PDP, a liquid crystal, an EL, a part or an element including a metal pattern, specifically, a PDP It is suitable for use in forming an EMI film and wiring of a flexible circuit board.
이하, 실시예를 통하여 본 발명에 대하여 보다 상세히 설명한다. 다만, 하기 실시예로서 본 발명을 한정하는 것은 아니다.Hereinafter, the present invention will be described in more detail with reference to Examples. However, the present invention is not limited to the following examples.
실시예 1Example 1
A. 유기 고분자 수지 (중합체 수지) 제조A. Organic Polymer Resin (Polymer Resin) Manufacturing
a. a. 다이알코올Dial alcohol 단량체 합성: Monomer Synthesis:
250mL 플라스크에 2.0g (5.708 mmol) 9,9'-비스(4-하이드록시페닐)프로렌, 3.155g (22.83 mmol) 포타슘카본네이트, 50ml 2-부탄온을 첨가하고 상온에서 교반한다. 이 혼합물에 3.173g(22.83mmol) 3-브로모프로판올을 서서히 가하여 치환반응을 수행하였다. 상기 반응물을 상온에서 24 시간 동안 교반한 후에 거름종이를 이용하여 여과하였다. 상기 여과한 용액을 증류수를 사용하여서 추출하였다. 추출시 유기용매로는 에테르(CH3CH2OCH2CH3)을 사용하였다. 상기 추출한 유기 용매 층을 소듐클로라이드(NaCl) 포화용액으로 세척하고 마그네슘설페이트(MgSO4)를 사용하여 수 분을 제거하였다. 그리고 CH2Cl2: CH3OH= 10:1부피비로 혼합된 전개액에서 컬럼크로마토그래피로 정제하여 흰색고체인 단량체(Ⅰ)을 수율 78%로 수득하였다. To a 250 mL flask was added 2.0 g (5.708 mmol) 9,9'-bis (4-hydroxyphenyl) proene, 3.155 g (22.83 mmol) potassium carbonate, 50 ml 2-butanone and stirred at room temperature. 3.173 g (22.83 mmol) 3-bromopropanol was slowly added to the mixture to carry out a substitution reaction. The reaction was stirred at room temperature for 24 hours and then filtered using a filter paper. The filtered solution was extracted using distilled water. In the extraction, an organic solvent (CH 3 CH 2 OCH 2 CH 3 ) was used. The extracted organic solvent layer was washed with a saturated sodium chloride (NaCl) solution, and water was removed using magnesium sulfate (MgSO 4 ). And CH 2 Cl 2 : CH 3 OH = purified by column chromatography in a developing solution mixed with a volume ratio of 10: 1 to obtain a white solid monomer (I) with a yield of 78%.
1H-NMR(400MHz, CDCl3): δ2.013 (m, 4H), 3.837 (t, 4H), 4.076 (t, 4H), 6.752 (d, 4H), 7.120 (d, 4H), 7.265 (d, 2H), 7.329 (m, 4H), 7.746 (d, 2H) 1 H-NMR (400 MHz, CDCl 3 ): δ2.013 (m, 4H), 3.837 (t, 4H), 4.076 (t, 4H), 6.752 (d, 4H), 7.120 (d, 4H), 7.265 ( d, 2H), 7.329 (m, 4H), 7.746 (d, 2H)
b. 공중합체 중합: b . Copolymerization Polymerization:
100ml 플라스크에 상기 합성한 단량체(I) 2.5g(5.3581mmol), BPDA(Biphenylphthalic dianhydride) 1.15g(3.911mmol), THPA(1,2,3,4-Tetrahydropthalic anhydride) 0.057g(0.391mmol), TBAB(Tetrabutylammoniumbromide) 0.02g 그리고 PGMEA(Propylene Glycol Monomethyl Ether Acetate) 7.158g을 넣고 120℃에서 9시간 동안 교반하였다. 잔류 BPDA를 제거하기 위해서 HEA(Hydroxyethylacrylate) 0.045g(0.391mmol)을 반응혼합물에 가하고 90℃로 감온하여 밤새(Overnight) 반응을 수행하여 노란색의 수지용액을 얻었다. 이와 같이 얻어진 유기 고분자 수지(고형분 34.4 wt%)의 산가는 182.64 mgKOH/g, 중량 평균 분자량은 3,811 이었다.2.5 g (5.3581 mmol) of the monomer (I) synthesized above, 1.15 g (3.911 mmol) of BPDA (Biphenylphthalic dianhydride), THPA (1,2,3,4-Tetrahydropthalic anhydride) 0.057 g (0.391 mmol), and TBAB in a 100 ml flask 0.02g (Tetrabutylammoniumbromide) and 7.158g of PGMEA (Propylene Glycol Monomethyl Ether Acetate) were added thereto, and the mixture was stirred at 120 ° C for 9 hours. In order to remove residual BPDA, 0.045 g (0.391 mmol) of HEA (Hydroxyethylacrylate) was added to the reaction mixture, and the reaction mixture was heated to 90 ° C. overnight to give an over night reaction to obtain a yellow resin solution. The acid value of the organic polymer resin (solid content 34.4 wt%) thus obtained was 182.64 mgKOH / g and the weight average molecular weight was 3,811.
B. 촉매 전구체 수지조성물의 제조B. Preparation of Catalyst Precursor Resin Compositions
상기 A에서 얻어진 고분자 수지 용액 19.5620g, DPHA(dipentaerythritol hexa-acrylate)용액(50wt% in PGMEA) 12.5006g, 광개시제 IRGACURE 2010(α-Hydroxyketone) 0.8651g, 실버트리플루오로아세테이트(Silvertrifluoroacetate, AgO2CCF3) 1.2856g, KBM 503(접착 증진제(Adhesion promoter)) 0.2093g, 10wt% BYK 331(BYK-Chemi사)의 PGMEA 용액(습윤제(Wetting agent) 용액) 0.2417g, 추가 용매로 DMF(N,N-Dimethyformamide) 35.09g을 혼합하고 교반기로 500rpm으로 교반하여 촉매전구체 수지조성물(고형분 22.19 wt%) 70.0000g을 얻었다. 19.5620 g of the polymer resin solution obtained in A, 12.5006 g of a dipentaerythritol hexa-acrylate (DPHA) solution (50 wt% in PGMEA), 0.8651 g of a photoinitiator IRGACURE 2010 (α-Hydroxyketone), silver trifluoroacetate (AgO 2 CCF 3 ) 1.2856 g, KBM 503 (Adhesion promoter) 0.2093 g, 10 wt% BYK 331 (BYK-Chemi) PGMEA solution (Wetting agent solution) 0.2417 g, DMF (N, N- Dimethyformamide) 35.09 g was mixed and stirred at 500 rpm with a stirrer to obtain 70.0000 g of a catalyst precursor resin composition (solid content 22.19 wt%).
C. 미세 금속패턴 형성C. Form a fine metal pattern
다음에 기술한 공정단계 및 조건으로 도 1에 도시한 바와 같은 공정으로 상기 제조된 촉매 전구체 수지조성물을 사용하여 금속 패턴을 형성하였다. Next, a metal pattern was formed using the catalyst precursor resin composition prepared above in the process as shown in FIG. 1 under the process steps and conditions described below.
(1) 코팅: 두께 100um의 PET 필름에 Gap size 10μm 메이어 바(Meyer bar)를 이용하여 상기 B에서 제조된 촉매 전구체 수지 조성물을 750nm 두께로 바코팅하였다. (1) Coating: The catalyst precursor resin composition prepared in B was bar-coated to a thickness of 750 nm using a Gap size 10 μm Meyer bar on a 100 μm-thick PET film.
(2) 전열경화: 바코팅 후, 100℃로 90초 동안 전열경화하였다. (2) Heat Curing: After bar coating, heat curing was performed at 100 ° C. for 90 seconds.
(3) 노 광: 접촉방식으로 포토마스크(20㎛ 메쉬패턴)를 통해 약 375nm 파장의 자외선을 195 mJ/Cm2 에너지로 조사하여 촉매 전구체 패턴을 노광시켰다. (3) Exposure: 195 mJ / Cm 2 UV light with a wavelength of about 375 nm through a photomask (20 µm mesh pattern) by contact method. Irradiation with energy exposed the catalyst precursor pattern.
(4) 현 상: ENF사의 ECD-100(pH 13의 염기성 수용액)을 상기 노광된 촉매패턴상에 144초 동안 스프레이 방식으로 분무하고 초순수(DI)로 세정하고 질소를 블로잉하여 현상하였다. (4) Development: ECD-100 (basic aqueous solution of pH 13) of ENF was sprayed onto the exposed catalyst pattern by spraying for 144 seconds, washed with ultrapure water (DI), and developed by blowing nitrogen.
(5) 후열경화: 현상 후, 100℃로 300초동안 후열경화하였다. (5) Post-heat curing: After development, post-heat curing was performed at 100 ° C. for 300 seconds.
(6) 환 원: 후열경화된 촉매 전구체 패턴에 330~500nm 의 파장영역의 자외선을 3.6 J/Cm2 에너지를 조사하여 촉매 금속을 환원시켰다. (6) Reduction: 3.6 J / Cm 2 UV in the wavelength region of 330-500 nm is applied to the post-cured catalyst precursor pattern. The energy was irradiated to reduce the catalytic metal.
(7) 구리 무전해 도금: ATOTECH 사의 Covertron 구리도금액(Copper Bath)를 사용하여 60℃에서 20분간 행하여 두께 1㎛의 도금층을 형성하였다. (7) Copper Electroless Plating: A plating layer having a thickness of 1 μm was formed by performing the ATOTECH Covertron copper plating solution (Copper Bath) at 60 ° C. for 20 minutes.
상기 본 실시예의 방법으로 형성된 금속패턴의 광학 현미경사진을 도 2에 도시하였으며, 본 실시예에서 형성된 금속패턴의 선폭은 20㎛이었다.An optical micrograph of the metal pattern formed by the method of this embodiment is shown in FIG. 2, and the line width of the metal pattern formed in this embodiment was 20 μm.
실시예Example 2 2
A. 지용성 유기 고분자 수지의 제조A. Preparation of fat-soluble organic polymer resin
100ml 플라스크에 상기 실시예 1의 a에서 합성한 다이알코올 단량체(I) 2.5g(5.3581mmol), 4,4'-옥시디프탈릭안하이드라이드(Oxydiphthalicanhydride) 1.213g(3.911mmol), THPA(1,2,3,4-Tetrahydropthalic anhydride) 0.057g(0.391mmol), TBAB(Tetrabutylammoniumbromide) 0.02g 그리고 PGMEA 7.158g을 넣고 120℃에서 9시간 동안 교반하였다. 잔류 4,4'-옥시디프탈릭안하이드라이드를 제거하기 위해서 HEA(Hydroxyethylacrylate) 0.04g(0.391mmol)을 반응혼합물에 가하고 90℃로 감온하여 밤새(Overnight) 반응을 수행하여 노란색의 수지 용액을 얻었다. 이와 같이 얻어진 유기 고분자 수지(고형분 34.4 wt%)의 산가는 183.21 mgKOH/g, 중량 평균 분자량은 4,051 이었다.In a 100 ml flask, 2.5 g (5.3581 mmol) of the dialcohol monomer (I) synthesized in Example a, 1.213 g (3.911 mmol) of 4,4'-oxydiphthalicanhydride, THPA (1, 0.057g (0.391mmol) of 2,3,4-Tetrahydropthalic anhydride), 0.02g of TBAB (Tetrabutylammoniumbromide) and 7.158g of PGMEA were added and stirred at 120 ° C for 9 hours. In order to remove residual 4,4'-oxydiphthalic hydride, 0.04 g (0.391 mmol) of HEA (Hydroxyethylacrylate) was added to the reaction mixture, and the reaction mixture was heated to 90 DEG C. to carry out an overnight reaction to obtain a yellow resin solution. . The acid value of the organic polymer resin (solid content 34.4 wt%) thus obtained was 183.21 mgKOH / g and the weight average molecular weight was 4,051.
B. 촉매 전구체 수지조성물의 제조B. Preparation of Catalyst Precursor Resin Compositions
상기 실시예 2의 A에서 제조된 유기 고분자수지를 사용한 것을 제외하고는 상기 실시예 1의 촉매 전구체 수지조성물 제조와 동일한 방법으로 촉매 전구체 수 지조성물(고형분 22.19 wt%)을 제조하였다.A catalyst precursor resin composition (solid content 22.19 wt%) was prepared in the same manner as the preparation of the catalyst precursor resin composition of Example 1, except that the organic polymer resin prepared in A of Example 2 was used.
C. 미세 금속패턴 형성C. Form a fine metal pattern
상기 실시예 2의 B에서 제조된 촉매 전구체 수지조성물을 사용한 것을 제외하고는 상기 실시예 1의 미세 금속패턴 제조와 동일한 방법으로 촉매 미세 금속패턴을 형성하였다. A catalyst fine metal pattern was formed in the same manner as in the preparation of the fine metal pattern of Example 1, except that the catalyst precursor resin composition prepared in B of Example 2 was used.
실시예Example 3 3
A. 지용성 유기 고분자 수지의 제조A. Preparation of fat-soluble organic polymer resin
100ml 플라스크에 상기 화학식 II의 다이아민단량체 2.8g(5.3581mmol), BPDA(Biphenylphthalic dianhydride) 1.15g(3.911mmol), THPA(1,2,3,4-Tetrahydropthalic anhydride) 0.057g(0.391mmol), TBAB(Tetrabutylammoniumbromide) 0.02g 그리고 PGMEA(Propylene Glycol Monomethyl Ether Acetate) 7.158g을 넣고 120℃에서 9시간 동안 교반하였다. 잔류 BPDA를 제거하기 위해서 HEA(Hydroxyethylacrylate) 0.045g(0.391mmol)을 반응혼합물에 가하고 90℃로 감온하여 밤새(Overnight) 반응을 수행하여 노란색의 수지용액을 얻었다. 이와 같이 얻어진 유기 고분자 수지(고형분 34.4 wt%)의 산가는 177.35 mgKOH/g, 중량 평균 분자량은 3,651 이었다.2.8 g (5.3581 mmol) of diamine monomer of Formula II, 1.15 g (3.911 mmol) of Biphenylphthalic dianhydride (BPDA), THPA (1,2,3,4-Tetrahydropthalic anhydride) 0.057 g (0.391 mmol), TBAB in a 100 ml flask 0.02g (Tetrabutylammoniumbromide) and 7.158g of PGMEA (Propylene Glycol Monomethyl Ether Acetate) were added thereto, and the mixture was stirred at 120 ° C for 9 hours. In order to remove residual BPDA, 0.045 g (0.391 mmol) of HEA (Hydroxyethylacrylate) was added to the reaction mixture, and the reaction mixture was heated to 90 ° C. overnight to give an over night reaction to obtain a yellow resin solution. The acid value of the organic polymer resin (solid content 34.4 wt%) thus obtained was 177.35 mgKOH / g and the weight average molecular weight was 3,651.
B. 촉매 전구체 수지조성물의 제조B. Preparation of Catalyst Precursor Resin Compositions
상기 실시예 3의 A에서 제조된 유기 고분자수지를 사용한 것을 제외하고는 상기 실시예 1의 촉매 전구체 수지조성물 제조와 동일한 방법으로 촉매 전구체 수지조성물(고형분 22.19 wt%)을 제조하였다.A catalyst precursor resin composition (solid content 22.19 wt%) was prepared in the same manner as the preparation of the catalyst precursor resin composition of Example 1, except that the organic polymer resin prepared in A of Example 3 was used.
C. 미세 금속패턴 형성C. Form a fine metal pattern
상기 실시예 3의 B에서 제조된 촉매 전구체 수지조성물을 사용한 것을 제외하고는 상기 실시예 1의 미세 금속패턴 제조와 동일한 방법으로 촉매 미세 금속패턴을 형성하였다. A catalyst fine metal pattern was formed in the same manner as in the preparation of the fine metal pattern of Example 1, except that the catalyst precursor resin composition prepared in B of Example 3 was used.
비교예Comparative example 1 One
A. 지용성 유기 고분자 수지의 제조A. Preparation of fat-soluble organic polymer resin
250mL 플라스크에 12.0g MMA(Methyl methacrylate), 8.0g MAA(Methyl methacrylic acid)을 3-MBA(3-메톡시부틸아세테이트)과 DPM(디프로필렌글리콜 모노 메틸 에테르)의 1:1 중량비 혼합용매 60.33g에 녹인 후, 0.4g 3-MPA(3-mercaptopropionic acid)를 첨가하여 교반하였다. 이 혼합용액을 질소 분위기 하에서 60℃로 승온시킨 후 1시간 동안 교반하였다. 0.6g V-65(2,2'-azobis-2,4-dimethyl-valeronitrile)을 3-MBA와 DPM의 1:1 중량비 혼합용매 5.0g에 녹인 용액을 60℃의 상기 혼합용액에 첨가한 후, 4시간 동안 같은 온도에서 반응을 수행하였다. 이와 같이 얻어진 유기 고분자 수지(고형분 23.17wt%)의 산가는 287.74 mgKOH/g, 중량 평균 분자량은 8,632이었다.12.0 g MMA (Methyl methacrylate), 8.0 g Methyl methacrylic acid (MAA) in a 250 mL flask, 60.33 g mixed solvent of 1: 1 weight ratio of 3-MBA (3-methoxybutyl acetate) and DPM (dipropylene glycol mono methyl ether) After dissolving in, 0.4 g 3-MPA (3-mercaptopropionic acid) was added and stirred. The mixed solution was heated to 60 ° C. under a nitrogen atmosphere and stirred for 1 hour. 0.6 g V-65 (2,2'-azobis-2,4-dimethyl-valeronitrile) was dissolved in 5.0 g of a 1: 1 weight ratio mixed solvent of 3-MBA and DPM, and then added to the mixed solution at 60 ° C. The reaction was carried out at the same temperature for 4 hours. The acid value of the organic polymer resin (solid content 23.17 wt%) thus obtained was 287.74 mgKOH / g and the weight average molecular weight was 8,632.
B. 촉매 전구체 수지조성물의 제조B. Preparation of Catalyst Precursor Resin Compositions
상기 비교예 1의 A에서 얻어진 고분자 수지 용액 28.7055g, DPHA(dipentaerythritol hexa-acrylate)용액(50wt% in PGMEA) 12.5006g, 광개시제 IRGACURE 2010(α-Hydroxyketone) 0.8651g, 실버트리플루오로아세테이트(Silvertrifluoroacetate, AgO2CCF3) 1.2856g, KBM 503(접착 증진제(Adhesion promoter)) 0.2093g, 10wt% BYK 331(BYK-Chemi사)의 PGMEA 용액(습윤제(Wetting agent) 용액) 0.2417g, 추가 용매로 DMF(N,N-Dimethyl Formamide) 26.1921g을 혼합하여 교반기로 500rpm으로 교반하여 촉매조성물(고형분 22.19 wt%) 70.0000g을 얻었다28.7055 g of the polymer resin solution obtained in A of Comparative Example 1, 12.5006 g of DPHA (dipentaerythritol hexa-acrylate) solution (50 wt% in PGMEA), photoinitiator IRGACURE 2010 (α-Hydroxyketone) 0.8651 g, silver trifluoroacetate (Silvertrifluoroacetate, AgO 2 CCF 3 ) 1.2856g, KBM 503 (Adhesion promoter) 0.2093g, 10wt% BYK 331 (BYK-Chemi) PGMEA solution (Wetting agent solution) 0.2417g, DMF (additional solvent) 26.1921 g of N, N-Dimethyl Formamide) were mixed and stirred at 500 rpm with a stirrer to obtain 70.0000 g of a catalyst composition (solid content 22.19 wt%).
C. 미세 금속패턴 형성C. Form a fine metal pattern
상기 비교예 1의 B에서 제조된 촉매 전구체 수지조성물을 사용한 것과 5μm 메쉬 마스크(mesh mask)를 사용한 것을 제외하고는 상기 실시예 1의 미세 금속패턴 제조와 동일한 방법으로 촉매 미세 금속패턴을 형성하였으며, 형성된 금속패턴 사진을 도 3에 나타내었다. 도 3의 금속패턴에서 알 수 있듯이, 본 비교예에서 형성된 금속패턴은 금속패턴이 탈착 및/또는 박리된다. A catalyst fine metal pattern was formed in the same manner as in the preparation of the fine metal pattern of Example 1, except that the catalyst precursor resin composition prepared in B of Comparative Example 1 and the 5 μm mesh mask were used. The formed metal pattern photo is shown in FIG. 3. As can be seen in the metal pattern of FIG. 3, the metal pattern formed in this comparative example is detached and / or peeled off.
비교예Comparative example 2 2
A. 지용성 유기 고분자 수지의 제조A. Preparation of fat-soluble organic polymer resin
100ml 플라스크에 1,4-벤젠디메탄올 2.5g(18.115mmol), BPDA 3.89g(13.224mmol), THPA(1,2,3,4-Tetrahydropthalic anhydride) 0.196g(1.322mmol), TBAB(Tetrabutylammoniumbromide) 0.04g 및 PGMEA 12.761g을 넣고 120℃에서 9시간 동안 교반하였다. 잔존하는 BPDA를 제거하기 위해서 HEA(Hydroxyethylacrylate) 0.153g(1.322mmol)를 반응혼합물에 가하여 90℃로 감온 하여 밤새 반응을 수행하여 노란색의 수지 용액을 얻었다. 이와 같이 얻어진 유기 고분자 수지(고형분 34.4 wt%)의 산가는 183.21 mgKOH/g, 중량 평균 분자량은 3,881 이었다.2.5 g (18.115 mmol) 1,4-benzenedimethanol, 3.89 g (13.224 mmol) BPDA, 0.196 g (1.322 mmol) THPA (1,2,3,4-Tetrahydropthalic anhydride), and tetrabutylammonium bromide (TBAB) 0.04 g and 12.761 g of PGMEA were added thereto and stirred at 120 ° C. for 9 hours. To remove the remaining BPDA, 0.153 g (1.322 mmol) of HEA (Hydroxyethylacrylate) was added to the reaction mixture, and the reaction mixture was heated to 90 ° C. overnight to obtain a yellow resin solution. The acid value of the organic polymer resin (solid content 34.4 wt%) thus obtained was 183.21 mgKOH / g and the weight average molecular weight was 3,881.
B. 촉매 전구체 수지조성물의 제조B. Preparation of Catalyst Precursor Resin Compositions
상기 비교예 2의 A에서 제조된 유기 고분자수지를 사용한 것을 제외하고는 상기 실시예 1의 촉매 전구체 수지조성물 제조와 동일한 방법으로 촉매 전구체 수지조성물(고형분 22.19 wt%)을 제조하였다.A catalyst precursor resin composition (solid content 22.19 wt%) was prepared in the same manner as the preparation of the catalyst precursor resin composition of Example 1, except that the organic polymer resin prepared in A of Comparative Example 2 was used.
C. 미세 금속패턴 형성C. Form a fine metal pattern
상기 비교예 2의 B에서 제조된 촉매 전구체 수지조성물을 사용한 것과 5μm 메쉬 마스크를 사용한 것을 제외하고는 상기 실시예 1의 미세 금속패턴 제조와 동일한 방법으로 촉매 미세 금속패턴을 형성하였다. 형성된 금속패턴 사진을 도 4에 나타내었다. 도 4의 금속패턴에서 알 수 있듯이, 본 비교예에서 형성된 금속패턴은 기재와의 밀착력이 불충분하여 금속패턴이 기재에서 밀착되지 않는 문제가 있다. A catalyst fine metal pattern was formed in the same manner as in the preparation of the fine metal pattern of Example 1, except that the catalyst precursor resin composition prepared in B of Comparative Example 2 and the 5 μm mesh mask were used. The formed metal pattern photo is shown in FIG. 4. As can be seen from the metal pattern of FIG. 4, the metal pattern formed in this comparative example has a problem that the metal pattern is not adhered to the substrate due to insufficient adhesion to the substrate.
도 1은 본 발명에 따라 포토마스크 공정을 이용하여 미세 구리패턴을 형성하는 공정을 나타내는 개략도이다. 1 is a schematic diagram showing a process of forming a fine copper pattern using a photomask process according to the present invention.
도 2는 실시예 1에서 형성된 금속패턴을 나타내는 사진이다. FIG. 2 is a photograph showing a metal pattern formed in Example 1. FIG.
도 3은 비교예 1에서 형성된 금속패턴의 사진이다. 3 is a photograph of a metal pattern formed in Comparative Example 1. FIG.
도 4는 비교예 2에서 형성된 금속패턴의 사진이다. 4 is a photograph of a metal pattern formed in Comparative Example 2. FIG.
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KR20230140951A (en) * | 2022-03-30 | 2023-10-10 | 재단법인대구경북과학기술원 | Simultaneous patterning of a transparent electrode and a photothermal layer, and a transparent electrode structure manufactured through the same |
KR102642598B1 (en) | 2022-03-30 | 2024-03-04 | 재단법인대구경북과학기술원 | Simultaneous patterning of a transparent electrode and a photothermal layer, and a transparent electrode structure manufactured through the same |
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