KR100939160B1

KR100939160B1 - Semiconductor Device and Method of Manufacturing The same

Info

Publication number: KR100939160B1
Application number: KR1020080014638A
Authority: KR
Inventors: 김진하
Original assignee: 주식회사 하이닉스반도체
Priority date: 2008-02-18
Filing date: 2008-02-18
Publication date: 2010-01-28
Also published as: KR20090089216A

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a method for forming the same. The present invention relates to a concave structure for forming a structure in which energy is concentrated on an upper portion of a fuse during laser blowing of a metal fuse. And forming an insulating film under the fuse in a concave shape and forming an upper fuse pattern and an insulating film in a concave shape, thereby increasing the thickness range of the insulating film on the fuse to prevent fuse failure and increasing process productivity of the semiconductor device. will be.

Description

Semiconductor device and method of manufacturing the same

1A and 1B are photographic views showing problems of a semiconductor device and a method of forming the same according to the prior art.

2A to 2C are plan views and cross-sectional views illustrating a semiconductor device and a method of forming the semiconductor device according to the related art.

3A to 3C are plan views and cross-sectional views illustrating a semiconductor device and a method of forming the same according to the present invention.

In general, as semiconductor devices become more integrated, DRAM devices have increased memory capacities and chip sizes. In the manufacturing of such semiconductor devices, when a defect occurs in one cell among a large number of fine cells, The yield of the device is low because the entire semiconductor device is disposed of as a defective product and disposed of.

Therefore, the current yield of the chip is improved by replacing an extra redundancy cell previously formed in the memory with a cell in which a defect has occurred during the manufacturing process to restore the entire memory.

In the repair operation using the redundancy cell, when a defective memory cell is selected through a test after wafer processing is completed, a program for converting the corresponding address into an address signal of the spare cell is executed in the internal circuit.

Therefore, when an address signal corresponding to a defective line is input in actual use, the selection is changed to a spare line instead of the defective cell.

In order to perform the repair operation as described above, after completing the semiconductor device, the fuse box is opened by removing the oxide film on the upper part of the fuse to repair the circuit in which the defect is generated, and the corresponding fuse is transmitted by a laser. Should be cut.

In this case, the wiring broken by the laser irradiation is called a fuse line, and the broken portion and the area surrounding the wiring are called a fuse box.

1A and 1B are photographic views illustrating problems of a semiconductor device and a method of forming the same according to the related art.

FIG. 1A illustrates a fuse formed normally after laser blowing of a fuse, in which no crack is generated under the fuse, and no residue is formed and is electrically It shows how the open occurred.

FIG. 1B shows that a fuse fail occurs in a laser blown area of the fuse, in contrast to the fuse formed normally in FIG. 1A, and a crack occurs in a lower part of the fuse. Metal cracks are formed inside the cracks to show that they are not electrically open completely.

As described above, the semiconductor device and the method of forming the semiconductor device according to the related art, when the fuse is vaporized, cracks are generated in the lower part of the fuse due to the explosion shock, and energy absorbed by the fuse during laser blowing ( Energy is dispersed and the fuse does not completely evaporate.

In addition, since some residuals are formed during laser blowing, the circuit may not operate or malfunction may occur.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a method for forming the same. The present invention relates to a concave structure for forming a structure in which energy is concentrated on an upper portion of a fuse during laser blowing of a metal fuse. By forming the insulating film under the fuse in a concave shape to form a fuse pattern and the insulating film in the upper concave shape, the thickness of the insulating film on the fuse is increased to prevent a fuse failure, and increase the process productivity of the semiconductor device and It aims at providing the formation method.

The semiconductor device according to the present invention,

An insulating film provided on the semiconductor substrate,

A photoresist pattern defining a trench having a concave structure on the insulating layer;

A trench formed by etching an insulating film using the photosensitive film pattern as a mask;

A metal fuse formed on the entire surface including the trench and

And a fuse blowing region formed by blowing the metal fuse.

Here, the insulating film is formed in a concave shape,

The insulating film is formed by using wet etching (Wet Etching),

The insulating layer is a trench formed by using isotropic etching,

The metal fuse is formed of aluminum,

The metal fuse includes a barrier metal,

The fuse blowing region may be formed in a concave shape.

On the other hand, the method of forming a semiconductor device according to the present invention,

Forming an insulating film on the semiconductor substrate;

Forming a photoresist pattern on the insulating layer, the photoresist pattern defining a trench of a concave structure;

Etching the insulating layer using the photoresist pattern as a mask to form a trench;

A metal fuse including a fuse blowing area is formed on the trench.

Here, the insulating film is formed in a concave shape,

The insulating film is formed by using wet etching (Wet Etching),

The insulating layer may be formed by forming trenches using isotropic etching.

The metal fuse is formed of aluminum,

The metal fuse comprises a barrier metal,

The fuse blowing region may be formed in a concave shape.

DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the technical idea of the present invention.

In addition, in the drawings, the thicknesses of layers and regions are exaggerated for clarity, and if it is mentioned that the layer is on another layer or substrate it may be formed directly on another layer or substrate, Alternatively, a third layer may be interposed therebetween.

Also, the same reference numerals throughout the specification represent the same components.

2A to 2C are plan views and cross-sectional views illustrating a semiconductor device and a method of forming the same according to the related art.

Referring to FIG. 2A, an insulating film is formed in a fuse region of a semiconductor substrate having a lower structure.

Next, after the metal conductive film for the fuse is formed on the insulating film, the fuse conductive film is patterned to form several fuses 200.

Next, an insulating film and a protective film are sequentially formed on the entire surface of the fuse 200 to cover the fuses 200.

Referring to FIG. 2B, FIG. 2A is a cross-sectional view illustrating a semiconductor device and a method of forming the same according to the related art, and illustrates a cutting plane taken along the line A-A of FIG. 2A.

At this time, the structure of the fuse 200 according to the prior art shows a state in which the aluminum 230 is formed flat between the upper and lower barrier metals 220 and 240.

Referring to FIG. 2C, FIG. 2C is a cross-sectional view illustrating a semiconductor device and a method of forming the semiconductor device according to the related art, and illustrates a cross-sectional view taken along line C ′ of FIG. 2A.

At this time, the structure of the fuse 220 according to the prior art shows a state in which the aluminum 230 is formed flat between the upper and lower barrier metals 220 and 240.

Referring to FIG. 3A, An insulating film is formed in the fuse area of the semiconductor substrate provided with the lower structure.

In this case, after forming a photoresist pattern defining a trench 350 having a concave structure in the insulating layer, the trench 350 is formed by etching the insulating layer using the photoresist pattern as a mask.

Next, after the metal conductive film for the fuse is formed on the trench 350, the fuse conductive film is patterned to form several fuses 300.

Next, an insulating film and a protective film are sequentially formed on the entire surface of the fuse 300 to cover the fuse 300.

At this time, in the region where the trench 350 is formed, the insulating film under the fuse 300 is formed in a concave shape, and thus the upper fuse pattern and the insulating film are formed in a concave shape.

Referring to FIG. 3B, FIG. 3B is a cross-sectional view illustrating a semiconductor device and a method of forming the semiconductor device according to the present invention, and illustrates a cut line B-B of FIG. 3A.

At this time, the structure of the fuse 300 according to the present invention is formed in a concave shape of the lower insulating film of the fuse 300, the upper and lower barrier metal (320, 340) and aluminum 330 structure is concave by isotropic etching. It is shown.

Referring to FIG. 3C, FIG. 3C is a cross-sectional view illustrating a semiconductor device and a method of forming the same according to the present invention, and illustrates a cut plane taken along line D-D of FIG. 3A.

In addition, the preferred embodiment of the present invention for the purpose of illustration, those skilled in the art will be able to various modifications, changes, substitutions and additions through the spirit and scope of the appended claims, such modifications and changes are the following claims It should be seen as belonging to a range.

Claims

An insulating film provided on the semiconductor substrate;

A trench formed by etching an insulating layer using the photoresist pattern as a mask; And

And a metal fuse including a fuse blowing region on the trench.

The method of claim 1,

And the insulating film is formed in a concave shape.

The method of claim 1,

The insulating film is a semiconductor device, characterized in that formed by wet etching (Wet Etching).

The method of claim 1,

The insulating film is a semiconductor device, characterized in that to form a trench using isotropic etching.

The method of claim 1,

The metal fuse is a semiconductor device, characterized in that formed of aluminum.

The method of claim 1,

The metal fuse comprises a barrier metal.

The method of claim 1,

The fuse blowing region is a semiconductor device, characterized in that formed in a concave shape.

Forming an insulating film on the semiconductor substrate;

Forming a photoresist pattern on the insulating layer, the photoresist pattern defining a trench having a concave structure;

And forming a metal fuse including a fuse blowing region on the trench.

The method of claim 8,

And the insulating film is formed in a concave shape.

The method of claim 8,

The insulating film is a method of forming a semiconductor device, characterized in that formed by wet etching (Wet Etching).

The method of claim 8,

The insulating film is a method of forming a semiconductor device, characterized in that to form a trench using isotropic etching.

The method of claim 8,

And the metal fuse is formed of aluminum.

The method of claim 8,

And the metal fuse comprises a barrier metal.

The method of claim 8,

The fuse blowing region may be formed in a concave shape.