KR100938416B1 - Method for manufacturing purifier - Google Patents
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- KR100938416B1 KR100938416B1 KR1020070139736A KR20070139736A KR100938416B1 KR 100938416 B1 KR100938416 B1 KR 100938416B1 KR 1020070139736 A KR1020070139736 A KR 1020070139736A KR 20070139736 A KR20070139736 A KR 20070139736A KR 100938416 B1 KR100938416 B1 KR 100938416B1
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Abstract
본 발명은 이산화규소를 주원료로 하는 청정 조성물 및 그 제조방법에 관한 것으로, 이산화규소의 순도가 99.7% 이상인 규산염광물을 3,000메쉬(mesh) 이상으로 분쇄하여 분말화시키는 제1공정(S10)과; 제1공정에서 분말화된 규산염 분말 80wt%, 탄산나트륨 16wt% 및 탄산칼슘 4wt%를 혼합하는 제2공정(S20)과; 제2공정의 혼합물을 진공 전기로 내에서 1350~1400℃로 가열 용융시켜 겔 상태의 혼합물을 얻는 제3공정(S30)과; 제3공정의 용융물을 900~1000℃까지 급랭시키는 제4공정(S40)과; 제4공정에서 급냉각된 조성물을 시간당 4~5℃씩 냉각시켜 700~750℃까지 냉각시키는 제5공정(S50)과; 제5공정에서 얻은 조성물을 분말화시키는 제6공정(S60)으로 구성되어, 용해성이 우수하여 환경 친화적인 무공해 청정 조성물로의 이용이 가능한 효과가 있다.The present invention relates to a clean composition comprising silicon dioxide as a main raw material and a method for manufacturing the same, comprising: a first step (S10) of pulverizing and grinding a silicate mineral having a purity of 99.7% or more of silicon dioxide to 3,000 mesh or more; A second step (S20) of mixing 80 wt% of the silicate powder powdered in the first step, 16 wt% of sodium carbonate and 4 wt% of calcium carbonate; A third step (S30) of heating and melting the mixture of the second step at 1350-1400 ° C. in a vacuum electric furnace to obtain a gelled mixture; A fourth step (S40) of rapidly cooling the melt of the third step to 900 to 1000 ° C; A fifth step (S50) of cooling the composition rapidly cooled in the fourth step by 4 to 5 ° C. per hour to 700 to 750 ° C .; It consists of the 6th process (S60) which powderizes the composition obtained by the 5th process, and it is excellent in solubility, and there exists an effect which can be used as an environmentally friendly pollution-free clean composition.
청정제, 이산화규소, 탄산나트륨, 탄산칼슘, 겔. Detergents, silicon dioxide, sodium carbonate, calcium carbonate, gel.
Description
본 발명은 청정 조성물의 제조방법에 관한 것으로서 특히, 이산화규소를 주원료로 하는 청정 조성물 및 그 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a clean composition, and more particularly, to a clean composition comprising silicon dioxide as a main raw material and a method for producing the same.
일반적으로 물에 장기간 노출되는 금속 또는 비철 금속 배관 등의 표면에는 여러 가지 부식 인자에 의해 표면에 부식이 발생하거나 스케일이 적층되어 관의 내부면적을 축소시켜 용수 흐름을 방해하여 경제적 손실을 발생시킨다.In general, the surface of metal or non-ferrous metal pipes such as long-term exposure to water may cause corrosion on the surface due to various corrosion factors or the scale is stacked to reduce the internal area of the pipe to interfere with the water flow, causing economic losses.
이러한 문제점을 해결하기 위하여 금속관의 스케일 방지제나 청정제가 개발되어 있으며, 규산염계 청관제 또는 인산염계 청관제가 주로 사용되고 있다.In order to solve this problem, an anti-scaling agent or a cleaning agent of a metal tube has been developed, and a silicate-based cleanser or a phosphate-based cleanser is mainly used.
일반적으로 이산화규소의 용해도는 100mg/ℓ(25℃,pH 7)로서, 물에 잘 용해되지 않는 난용성를 가지며, 따라서 자연수에 용존하는 이산화규소의 양은 극히 적고 이산화규소의 낮은 용해성으로 인하여 규소를 이용한 청정 조성물의 이용에 많은 제약을 받는다.Generally, the solubility of silicon dioxide is 100mg / l (25 ℃, pH 7), and it has poor solubility in water. Therefore, the amount of silicon dioxide dissolved in natural water is very small and silicon dioxide is used due to the low solubility of silicon dioxide. There are many restrictions on the use of the clean composition.
본 발명은 규산염을 주원료로 사용한 청정 조성물에 관한 것으로, 규산염 광물의 분말 구조의 변화를 최소화하는 겔 상태로 이산화규소를 용융시켜 비정질 결정체의 조성물을 얻음으로써 용해성이 우수하여 다양한 기능성을 갖는 청정 조성물을 제공하고자 한다.The present invention relates to a cleaning composition using silicate as a main raw material, to obtain a composition of amorphous crystals by melting silicon dioxide in a gel state to minimize the change in the powder structure of the silicate mineral to obtain a clean composition having excellent solubility and various functionalities To provide.
이러한 본 발명의 청정 조성물의 제조방법은, 이산화규소의 순도가 99.7% 이상인 규산염광물을 3,000메쉬(mesh) 이상으로 분쇄하여 분말화시키는 제1공정과; 제1공정에서 분말화된 규산염 분말 80wt%, 탄산나트륨 16wt% 및 탄산칼슘 4wt%를 혼합하는 제2공정과; 제2공정의 혼합물을 진공 전기로 내에서 1350~1400℃로 가열 용융시켜 겔 상태의 혼합물을 얻는 제3공정과; 제3공정의 용융물을 900~1000℃까지 급랭시키는 제4공정과; 제4공정에서 급냉각된 조성물을 시간당 4~5℃씩 냉각시켜 700~750℃까지 냉각시키는 제5공정과; 제5공정에서 얻은 조성물을 분말화시키는 제6공정으로 구성되는 것을 특징으로 한다.Such a method for preparing a clean composition of the present invention comprises: a first step of pulverizing and grinding a silicate mineral having a purity of 99.7% or more of silicon dioxide to 3,000 mesh or more; A second step of mixing 80 wt% of the silicate powder powdered in the first step, 16 wt% of sodium carbonate, and 4 wt% of calcium carbonate; A third step of heating and melting the mixture of the second step at 1350-1400 ° C. in a vacuum electric furnace to obtain a gelled mixture; A fourth step of rapidly cooling the melt of the third step to 900 to 1000 ° C; A fifth step of cooling the composition rapidly cooled in the fourth step by 4 to 5 ° C. per hour to 700 to 750 ° C .; It is characterized by consisting of a sixth step of powdering the composition obtained in the fifth step.
본 발명의 청정 조성물은, 이산화규소의 순도가 99.7% 이상인 규산염광물을 3,000메쉬(mesh) 이상으로 분쇄시킨 규산염 분말 80wt%에 대하여 탄산나트륨 16wt% 및 탄산칼슘 4wt%를 혼합하고 1350~1400℃로 가열 용융시킨 겔 상태의 혼합물을 900 ~ 1000 ℃까지 급랭시킨 후 시간당 4~5℃ 냉각시켜 700~750℃까지 냉각시켜 제조된 비정질 결정체인 것을 특징으로 한다.The clean composition of the present invention is mixed with 16wt% sodium carbonate and 4wt% calcium carbonate to 80wt% of the silicate powder pulverized silicate mineral having a purity of 99.7% or more of silicon dioxide to 3,000 mesh or more and heated to 1350 ~ 1400 ℃ Melted gel mixture is quenched to 900 ~ 1000 ℃ and then cooled to 4 ~ 5 ℃ per hour is characterized in that the amorphous crystals prepared by cooling to 700 ~ 750 ℃.
본 발명의 청정 조성물의 제조방법은, 규산염 분말, 탄산나트륨 및 탄산칼슘을 혼합한 혼합물을 1350~1400℃에서 가열 용융시켜 겔 상태의 용융물을 900~1000℃까지 급랭시키는 1차 냉각공정과 700~750℃까지 서냉시키는 2차 냉각공정을 통하여 비정질 결정구조를 갖는 청정 조성물을 얻을 수가 있으며, 이러한 청정 조성물은 비정질 결정체의 구조를 가짐으로써 용해성이 우수하고 물에 용해 시에 온도에 영향을 받지 않고 일정하게 용해되어 응고, 결석으로 인한 슬러지가 생성되지 않는 성질을 갖는다.The method for producing a clean composition of the present invention comprises a primary cooling process for rapidly melting a mixture of silicate powder, sodium carbonate and calcium carbonate at 1350-1400 ° C. to rapidly quench the melt in the gel state to 900-1000 ° C. and 700-750. Secondary cooling process to slow down to ℃ ℃ to obtain a clean composition having an amorphous crystal structure, such a clean composition has an amorphous crystal structure of excellent solubility and is not affected by the temperature at the time of dissolving in water constantly It dissolves and solidifies and does not produce sludge due to stones.
또한, 본 발명에 따른 청정 조성물은 무미, 무취, 무독으로 다수의 알칼리 이온을 함유하여 산성수에 대한 투여량에 따라서 pH 조절이 가능하다. 또한, 용해수에 사용됨으로써 지하수, 수돗물 등에 함유된 칼슘, 마그네슘 등의 광물질 양이온을 흡착하여 완전한 미네랄원소로 생성되어 경수의 연수화에 탁월한 효과를 가질 수가 있으며, 토질을 정화시키는 환경 친화적인 무공해 청정 조성물로의 이용이 가능하여 다양한 활용성을 갖는 청정 조성물을 제공할 수 있는 효과가 있다.In addition, the clean composition according to the present invention can be pH-adjusted according to the dosage for acidic water by containing a plurality of alkali ions tasteless, odorless, non-toxic. In addition, by being used in dissolved water, mineral cations such as calcium and magnesium contained in groundwater and tap water are adsorbed to form a complete mineral element, which can have an excellent effect on softening soft water. It can be used as a composition has the effect of providing a clean composition having a variety of applications.
본 발명의 실시예를 첨부 도면을 참조하여 상세히 설명하면 다음과 같다.An embodiment of the present invention will be described in detail with reference to the accompanying drawings.
도 1을 참고하면, 본 발명의 청정 조성물의 제조방법은, 이산화규소의 순도가 99.7% 이상인 규산염광물을 3,000메쉬(mesh) 이상으로 분쇄하여 분말화시키는 제1공정(S10)과; 제1공정에서 분말화된 규산염 분말 80wt%, 탄산나트륨 16wt% 및 탄산칼슘 4wt%를 혼합하는 제2공정(S20)과; 제2공정의 혼합물을 진공 전기로 내에서 1350~1400℃로 가열 용융시켜 겔 상태의 혼합물을 얻는 제3공정(S30)과; 제2공정의 용융물을 900~1000℃까지 급랭시키는 제4공정(S40)과; 제4공정에서 급냉각된 조성물을 시간당 4~5℃씩 냉각시켜 700~750℃까지 냉각시키는 제5공정(S50)과; 제5공정에서 얻은 조성물을 분말화시키는 제6공정(S60)으로 구성되는 것을 특징으로 한다.Referring to Figure 1, the manufacturing method of the clean composition of the present invention, the first step (S10) of pulverizing and grinding the silicate mineral having a purity of 99.7% or more of silicon dioxide to 3,000 mesh (mesh) or more; A second step (S20) of mixing 80 wt% of the silicate powder powdered in the first step, 16 wt% of sodium carbonate and 4 wt% of calcium carbonate; A third step (S30) of heating and melting the mixture of the second step at 1350-1400 ° C. in a vacuum electric furnace to obtain a gelled mixture; A fourth step (S40) of rapidly quenching the melt of the second step to 900 to 1000 ° C; A fifth step (S50) of cooling the composition rapidly cooled in the fourth step by 4 to 5 ° C. per hour to 700 to 750 ° C .; It is characterized by consisting of a sixth step (S60) for powdering the composition obtained in the fifth step.
제1공정(S10)은 규산염 광물을 채광, 분쇄하여 분말화시키는 공정으로서, 이산화규소(SiO2)의 순도가 99.7% 정도의 규산염광물을 채광하여 파쇄, 미분쇄 공정을 거쳐 입도 3,000메쉬(mesh) 이상의 미분말을 정제, 선별하여 주원료로 이용된다.The first step (S10) is a step of mining and pulverizing silicate minerals and powdering them.The silicon dioxide (SiO2) is mined with a silicate mineral having a purity of about 99.7%, and then crushed and pulverized to obtain a particle size of 3,000 mesh or more. Fine powder is purified and screened and used as the main raw material.
제2공정(S20)은 제1공정에서 분말화된 규산염 분말 80wt%에 대해 첨가물로서 탄산나트륨 16wt%와 탄산칼슘 4wt%를 혼합한다.In the second step S20, 16 wt% of sodium carbonate and 4 wt% of calcium carbonate are mixed as an additive with respect to 80 wt% of the silicate powder powdered in the first step.
특히 규산염 분말과 첨가물을 교반기 내에서 투입하여 혼합시키는 과정에서 혼합물의 발열 반응에 의해 온도가 상승하게 된다. 따라서, 혼합 후에는 이를 상온에서 30℃까지 냉각시키는 것이 바람직하다.In particular, in the process of mixing the silicate powder and the additive in the stirrer, the temperature is increased by the exothermic reaction of the mixture. Therefore, after mixing, it is preferable to cool it to 30 ° C at room temperature.
제3공정(S30)은 혼합물을 1350~1400 ℃로 가열 용융시켜 겔 상태로 만드는 공정이다.The third step (S30) is a step of heating and melting the mixture to 1350 ~ 1400 ℃ to make a gel state.
구체적으로 혼합물은 진공 전기로 내에 투입한 후에 진공펌프에 의해 전기로 내부를 진공상태로 만들고 1350~1400℃로 가열하여 혼합물이 겔(gell) 상태에 도달할 때까지 대략 16시간 정도 가열 과정을 거친다.Specifically, the mixture is introduced into a vacuum furnace, and then the inside of the furnace is vacuumed by a vacuum pump and heated to 1350 ~ 1400 ° C., which is then heated for about 16 hours until the mixture reaches a gel state. .
이러한 가열 과정은 1414℃의 높은 용융점을 갖는 이산화규소를 기준으로 최대한 구조의 변화가 발생하지 않도록 낮은 온도 내에서 겔 상태와 유사한 상태에 도달하도록 유도하게 되며, 이는 탄산나트륨 첨가물의 영향으로 입자가 사슬형태로 연결되어 망구조를 이루어 겔화가 되면서 이온교환체로서 안정된 분산구조를 형성하게 되며, 용융점 차이에 의한 금속이온들의 제거를 목적으로 하며, 다른 한편으로 불순물의 제거 및 가스, 미생물 제거를 겸할 수가 있다.This heating process leads to a state similar to the gel state at a low temperature so that the maximum structural change does not occur based on silicon dioxide having a high melting point of 1414 ° C., which is caused by the effect of sodium carbonate additives. It forms a stable structure of structure as an ion exchanger as it is gelled by forming a network structure, and aims to remove metal ions by melting point difference, and on the other hand, it can also remove impurities, gas and microorganisms. .
제4공정(S40)은 평형상태의 용융물에 고압의 물을 분사하여 900~1000℃까지 급냉시키는 과정이다.The fourth step (S40) is a process of quenching to 900 ~ 1000 ℃ by injecting a high pressure water to the melt in the equilibrium state.
이러한 급랭과정에서 결정도가 낮고 결정의 크기가 작은 비정질의 결정체로 유도되어 보다 이온교환 능력이 탁월한 조성물을 얻을 수가 있다.In this quenching process, the crystals having low crystallinity and small crystal size are induced into amorphous crystals, thereby obtaining a composition having excellent ion exchange ability.
분산 콜로이드 상태의 비정질 결정체의 표면은 다량의 수산화이온을 갖게 되며, 내부는 시코키산 결합(Si-O-Si-)을 이루고 있어 응집체를 이루는 것이며, 이러한 구조로 인하여 결합성 및 흡착성의 특징을 갖게 된다.The surface of the amorphous crystal in the form of dispersed colloid has a large amount of hydroxide ions, and the inside forms agglomerates by forming Sikokisan bonds (Si-O-Si-). do.
제5공정(S50)은 급랭시킨 조성물을 시간당 4~5℃씩 700~750℃정도까지 천천히 냉각하여 분산 콜로이드 상태의 비정질 결정체를 얻는 공정이다.The fifth step (S50) is a step of slowly cooling the quenched composition to about 700 to 750 ° C. by 4 to 5 ° C. per hour to obtain amorphous crystals in a dispersed colloidal state.
이는 급냉각 후에 이온교환체의 상태가 준안전상태이므로, 콜로이드 입자에 작용하는 중력, 정전기력, 분자 수준의 상호작용에 의한 힘으로부터 안정성을 유지시키기 위한 것이다.Since the state of the ion exchanger after the quenching is a quasi-safe state, it is to maintain the stability from the force due to the gravity, electrostatic force, molecular interactions acting on the colloidal particles.
또한, 본 발명에 있어 용융물을 물을 분사시켜 급랭만을 실시하는 경우에는 시간이 경과함에 따라서 내부 균열과 부스러짐 현상이 발생함을 확인할 수가 있었으며, 이는 내부 응력으로 인한 지속적인 구조 변형 형상으로 구조적 안정을 유도하기 위하여 급냉각 후에 천천히 냉각시키는 공정이 요구된다.In addition, in the present invention, when quenching only the melt by spraying water, it was confirmed that internal cracking and chipping occurred as time elapsed. To induce a slow cooling process after quenching is required.
제6공정(S60)은 제5공정에서 서냉시킨 조성물을 자연 냉각시킨 후에 건조된 조성물을 분말화하거나 1~1.5㎜로 분쇄하여 불투명 미백색의 비정질 결정체로서 제품화하는 공정이다.The sixth step (S60) is a step of producing the product as an opaque, off-white amorphous crystal by pulverizing the dried composition and then pulverizing the dried composition to 1 to 1.5 mm after naturally cooling the composition cooled in the fifth step.
이와 같이 제조된 본 발명의 청정 조성물은 비정질 결정체 구조를 가짐으로써, 종래의 규산염을 기본으로 하는 청정제와 비교하여 용해성이 우수한 효과를 갖는다.The cleaning composition of the present invention thus prepared has an amorphous crystal structure, and thus has an effect of excellent solubility as compared with a conventional silicate-based cleaning agent.
<표 1>은 규산염 분말을 겔 상태로 제조하기 위한 실험결과를 보여주는 것으로, 규산염 분말 100wt%만으로 1100~1300℃로 가열 시에 완전 용융 상태(겔 상태)를 확인할 수 없었으나, 규산염 분말에 탄산나트륨과 탄산칼슘을 혼합하여 1350~1400℃로 16시간 이상 가열한 경우에는 완전 용융(겔 상태)이 됨을 확인할 수가 있었다.<Table 1> shows the experimental results for preparing the silicate powder in the gel state, the complete melting state (gel state) was not confirmed when heated to 1100 ~ 1300 ℃ only 100% by weight of the silicate powder, but sodium carbonate in the silicate powder When mixed with calcium carbonate and heated at 1350 ~ 1400 ℃ for more than 16 hours it was confirmed that the complete melting (gel state).
<표 1>TABLE 1
상기 실시예는 본 발명의 기술적 사상을 구체적으로 설명하기 위한 일례로서, 본 발명의 범위는 상기의 도면이나 실시예에 한정되지 않는다.The above embodiment is an example for describing the technical idea of the present invention in detail, and the scope of the present invention is not limited to the above drawings and embodiments.
도 1은 본 발명의 청정 조성물의 제조방법을 보여주는 순서도.1 is a flow chart showing a method for preparing a clean composition of the present invention.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR20000063424A (en) * | 2000-07-10 | 2000-11-06 | 이성휴 | put natural silicasand main material of anticaustic composition |
| KR20040007610A (en) * | 2001-05-25 | 2004-01-24 | 다우 코닝 코포레이션 | Integrated process for preparing a silicone rubber composition |
| JP3848701B2 (en) * | 1996-05-31 | 2006-11-22 | 清一 渡辺 | Method for producing snow melting agent |
| KR100674127B1 (en) | 2005-03-09 | 2007-01-24 | 황익현 | Material to improve quality of asphalt concrete, and the manufacturing method thereof |
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| JP3848701B2 (en) * | 1996-05-31 | 2006-11-22 | 清一 渡辺 | Method for producing snow melting agent |
| KR20000063424A (en) * | 2000-07-10 | 2000-11-06 | 이성휴 | put natural silicasand main material of anticaustic composition |
| KR20040007610A (en) * | 2001-05-25 | 2004-01-24 | 다우 코닝 코포레이션 | Integrated process for preparing a silicone rubber composition |
| KR100674127B1 (en) | 2005-03-09 | 2007-01-24 | 황익현 | Material to improve quality of asphalt concrete, and the manufacturing method thereof |
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