KR100915570B1 - 유기반도체 용액들 - Google Patents
유기반도체 용액들Info
- Publication number
- KR100915570B1 KR100915570B1 KR1020047001041A KR20047001041A KR100915570B1 KR 100915570 B1 KR100915570 B1 KR 100915570B1 KR 1020047001041 A KR1020047001041 A KR 1020047001041A KR 20047001041 A KR20047001041 A KR 20047001041A KR 100915570 B1 KR100915570 B1 KR 100915570B1
- Authority
- KR
- South Korea
- Prior art keywords
- organic
- solution
- organic semiconductor
- additive
- electronic device
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 claims abstract description 11
- 239000000654 additive Substances 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 29
- 230000000996 additive effect Effects 0.000 claims description 25
- 238000007639 printing Methods 0.000 claims description 21
- 150000001875 compounds Chemical class 0.000 claims description 19
- 229920000642 polymer Polymers 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 14
- 238000007641 inkjet printing Methods 0.000 claims description 12
- 239000010410 layer Substances 0.000 claims description 11
- 229910052731 fluorine Inorganic materials 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 7
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 6
- 125000004432 carbon atom Chemical group C* 0.000 claims description 5
- 150000002894 organic compounds Chemical class 0.000 claims description 5
- 125000005375 organosiloxane group Chemical group 0.000 claims description 5
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 4
- 125000003545 alkoxy group Chemical group 0.000 claims description 4
- 229910052801 chlorine Inorganic materials 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 229910052717 sulfur Inorganic materials 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 230000005669 field effect Effects 0.000 claims description 3
- 125000005842 heteroatom Chemical group 0.000 claims description 3
- 125000001424 substituent group Chemical group 0.000 claims description 3
- 239000004094 surface-active agent Substances 0.000 claims description 3
- 125000004400 (C1-C12) alkyl group Chemical group 0.000 claims description 2
- 125000004122 cyclic group Chemical group 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 125000001072 heteroaryl group Chemical group 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000011247 coating layer Substances 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052789 astatine Inorganic materials 0.000 claims 1
- 150000003384 small molecules Chemical class 0.000 claims 1
- 239000000243 solution Substances 0.000 description 116
- -1 siloxanes Chemical class 0.000 description 46
- 101000801643 Homo sapiens Retinal-specific phospholipid-transporting ATPase ABCA4 Proteins 0.000 description 18
- 102100033617 Retinal-specific phospholipid-transporting ATPase ABCA4 Human genes 0.000 description 18
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 18
- 229920004482 WACKER® Polymers 0.000 description 13
- 239000004205 dimethyl polysiloxane Substances 0.000 description 11
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 11
- 239000003960 organic solvent Substances 0.000 description 11
- 239000002904 solvent Substances 0.000 description 11
- 238000000576 coating method Methods 0.000 description 10
- 229920001577 copolymer Polymers 0.000 description 10
- 238000002474 experimental method Methods 0.000 description 10
- 239000012530 fluid Substances 0.000 description 9
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 9
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical class COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 6
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 5
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 5
- 229920001296 polysiloxane Polymers 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 239000011149 active material Substances 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- RICKKZXCGCSLIU-UHFFFAOYSA-N 2-[2-[carboxymethyl-[[3-hydroxy-5-(hydroxymethyl)-2-methylpyridin-4-yl]methyl]amino]ethyl-[[3-hydroxy-5-(hydroxymethyl)-2-methylpyridin-4-yl]methyl]amino]acetic acid Chemical class CC1=NC=C(CO)C(CN(CCN(CC(O)=O)CC=2C(=C(C)N=CC=2CO)O)CC(O)=O)=C1O RICKKZXCGCSLIU-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 239000012046 mixed solvent Substances 0.000 description 3
- 125000002524 organometallic group Chemical group 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 229920000123 polythiophene Polymers 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 125000005259 triarylamine group Chemical group 0.000 description 3
- 239000008096 xylene Substances 0.000 description 3
- CHLICZRVGGXEOD-UHFFFAOYSA-N 1-Methoxy-4-methylbenzene Chemical compound COC1=CC=C(C)C=C1 CHLICZRVGGXEOD-UHFFFAOYSA-N 0.000 description 2
- OISVCGZHLKNMSJ-UHFFFAOYSA-N 2,6-dimethylpyridine Chemical compound CC1=CC=CC(C)=N1 OISVCGZHLKNMSJ-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical group [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 150000001336 alkenes Chemical group 0.000 description 2
- 150000001345 alkine derivatives Chemical group 0.000 description 2
- 125000002877 alkyl aryl group Chemical group 0.000 description 2
- 229920005603 alternating copolymer Polymers 0.000 description 2
- 125000004104 aryloxy group Chemical group 0.000 description 2
- 150000008359 benzonitriles Chemical class 0.000 description 2
- 229920001400 block copolymer Polymers 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 125000004663 dialkyl amino group Chemical group 0.000 description 2
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000007646 gravure printing Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 2
- 229940078552 o-xylene Drugs 0.000 description 2
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 2
- 229920000058 polyacrylate Polymers 0.000 description 2
- 229920000767 polyaniline Polymers 0.000 description 2
- 229920000193 polymethacrylate Polymers 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 2
- 229920005604 random copolymer Polymers 0.000 description 2
- 125000005373 siloxane group Chemical group [SiH2](O*)* 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- PXQLVRUNWNTZOS-UHFFFAOYSA-N sulfanyl Chemical group [SH] PXQLVRUNWNTZOS-UHFFFAOYSA-N 0.000 description 2
- 150000003738 xylenes Chemical class 0.000 description 2
- 125000001140 1,4-phenylene group Chemical group [H]C1=C([H])C([*:2])=C([H])C([H])=C1[*:1] 0.000 description 1
- URZHQOCYXDNFGN-UHFFFAOYSA-N 2,4,6-trimethyl-2,4,6-tris(3,3,3-trifluoropropyl)-1,3,5,2,4,6-trioxatrisilinane Chemical compound FC(F)(F)CC[Si]1(C)O[Si](C)(CCC(F)(F)F)O[Si](C)(CCC(F)(F)F)O1 URZHQOCYXDNFGN-UHFFFAOYSA-N 0.000 description 1
- KLIDCXVFHGNTTM-UHFFFAOYSA-N 2,6-dimethoxyphenol Chemical compound COC1=CC=CC(OC)=C1O KLIDCXVFHGNTTM-UHFFFAOYSA-N 0.000 description 1
- KCJAIHQXOQUWTI-UHFFFAOYSA-N 3-tris(trimethylsilyloxy)silylpropan-1-amine Chemical compound C[Si](C)(C)O[Si](O[Si](C)(C)C)(O[Si](C)(C)C)CCCN KCJAIHQXOQUWTI-UHFFFAOYSA-N 0.000 description 1
- 229940077398 4-methyl anisole Drugs 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229920000666 Poly[dimethylsiloxane-co-methyl(3-hydroxypropyl)siloxane]-graft-poly(ethylene glycol) methyl ether Polymers 0.000 description 1
- 229920000670 Poly[dimethylsiloxane-co-methyl(stearoyloxyalkyl)siloxane] Polymers 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical class [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004480 active ingredient Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000012615 aggregate Substances 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 239000003849 aromatic solvent Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 150000001555 benzenes Chemical class 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- HAURRGANAANPSQ-UHFFFAOYSA-N cis-2,4,6-Trimethyl-2,4,6-triphenylcyclotrisiloxane Chemical compound O1[Si](C)(C=2C=CC=CC=2)O[Si](C)(C=2C=CC=CC=2)O[Si]1(C)C1=CC=CC=C1 HAURRGANAANPSQ-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002322 conducting polymer Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 150000001923 cyclic compounds Chemical class 0.000 description 1
- HHNHBFLGXIUXCM-GFCCVEGCSA-N cyclohexylbenzene Chemical compound [CH]1CCCC[C@@H]1C1=CC=CC=C1 HHNHBFLGXIUXCM-GFCCVEGCSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- IYGOFTAQEXCQCQ-UHFFFAOYSA-N diethoxy-ethyl-[1-(7-oxabicyclo[4.1.0]heptan-6-yl)ethoxy]silane Chemical compound C1CCCC2OC21C(C)O[Si](CC)(OCC)OCC IYGOFTAQEXCQCQ-UHFFFAOYSA-N 0.000 description 1
- HPYNZHMRTTWQTB-UHFFFAOYSA-N dimethylpyridine Natural products CC1=CC=CN=C1C HPYNZHMRTTWQTB-UHFFFAOYSA-N 0.000 description 1
- KWKXNDCHNDYVRT-UHFFFAOYSA-N dodecylbenzene Chemical compound CCCCCCCCCCCCC1=CC=CC=C1 KWKXNDCHNDYVRT-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002391 heterocyclic compounds Chemical class 0.000 description 1
- HTDJPCNNEPUOOQ-UHFFFAOYSA-N hexamethylcyclotrisiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O1 HTDJPCNNEPUOOQ-UHFFFAOYSA-N 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 125000004356 hydroxy functional group Polymers O* 0.000 description 1
- 125000002887 hydroxy group Polymers [H]O* 0.000 description 1
- NOKUWSXLHXMAOM-UHFFFAOYSA-N hydroxy(phenyl)silicon Chemical class O[Si]C1=CC=CC=C1 NOKUWSXLHXMAOM-UHFFFAOYSA-N 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 150000002678 macrocyclic compounds Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000013612 plasmid Substances 0.000 description 1
- 229920003216 poly(methylphenylsiloxane) Polymers 0.000 description 1
- 229920001921 poly-methyl-phenyl-siloxane Polymers 0.000 description 1
- 229920000438 poly[methyl(3,3,3-trifluoropropyl)siloxane] polymer Polymers 0.000 description 1
- 229920006294 polydialkylsiloxane Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000000527 sonication Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- RSNQKPMXXVDJFG-UHFFFAOYSA-N tetrasiloxane Chemical compound [SiH3]O[SiH2]O[SiH2]O[SiH3] RSNQKPMXXVDJFG-UHFFFAOYSA-N 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- AVYKQOAMZCAHRG-UHFFFAOYSA-N triethoxy(3,3,4,4,5,5,6,6,7,7,8,8,8-tridecafluorooctyl)silane Chemical compound CCO[Si](OCC)(OCC)CCC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F AVYKQOAMZCAHRG-UHFFFAOYSA-N 0.000 description 1
- 125000000725 trifluoropropyl group Chemical group [H]C([H])(*)C([H])([H])C(F)(F)F 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K99/00—Subject matter not provided for in other groups of this subclass
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D165/00—Coating compositions based on macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Coating compositions based on derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Electroluminescent Light Sources (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Thin Film Transistor (AREA)
- Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Silicon Polymers (AREA)
- Inks, Pencil-Leads, Or Crayons (AREA)
Abstract
Description
사용된 첨가제들 | |||
# | 화학약품명 | 점성도 | 공급자 |
첨가제1 | 폴리(디메틸실록산(90)-co-메틸-페닐실록산(10)) | 500mPa*s | ALDRICH |
첨가제2 | 폴리디메틸실록산 | 1000mPa*s | ALDRICH |
첨가제3 | 폴리디메틸실록산 | 100mPa*s | GELEST/ABCR |
첨가제4 | 폴리(디메틸실록산(95)-co-디페닐실록산(5)) | 100mPa*s | GELEST/ABCR |
첨가제5 | 말단기가 메르켑토인 폴리(디메틸실록산) | 200mPa*s | WACKER |
사용된 중합체 용액들 | ||||
# | 중합체 | 용매 | 농도(g/l) | 점성도 [mPa*s] |
용액1 | SY18 | 4-메틸아니솔 | 7.0 | 10.0 @ 500 S-1 |
용액2 | SY18 | 아니솔/o-자일렌(1:1) | 11.0 | 18.2 @ 500 S-1 |
용액3 | HB1341 | 아니솔/o-자일렌(1:1) | 12.3 | 9.6 @ 500 S-1 |
용액4 | HB1341 | 테트랄린 | 7.5 | 9.2 @ 500 S-1 |
다양한 용액 및 첨가제를 하적한 경우에서 슬라이딩 각도의 비교 | |||
용액 | 첨가제 | 첨가제의 농도 1) | 슬라이딩 각도 |
용액1 | - | - | 90˚ |
용액1 | 첨가제1 | 0.001% | 84˚ |
용액1 | 첨가제1 | 0.01% | 59˚ |
용액1 | 첨가제1 | 0.1% | 38˚ |
용액1 | 첨가제2 | 0.01% | 67˚ |
용액1 | 첨가제3 | 0.01% | 55˚ |
용액1 | 첨가제4 | 0.01% | 62˚ |
용액1 | 첨가제5 | 0.01% | 63˚ |
용액2 | - | - | 90˚ |
용액2 | 첨가제1 | 0.001% | 78˚ |
용액3 | - | 90° | |
용액3 | 첨가제1 | 0.001% | 68˚ |
용액4 | - | - | 90˚ |
용액4 | 첨가제1 | 0.001% | 73˚ |
용액4 | 첨가제1 | 0.01% | 61˚ |
용액4 | 첨가제1 | 0.1% | 40˚ |
용액4 | 첨가제4 | 0.001% | 75˚ |
용액4 | 첨가제4 | 0.01% | 60˚ |
용액4 | 첨가제4 | 0.1% | 37˚ |
1)농도 : m/v ( 용매에 기초한 질량/부피) |
상이한 용액과 첨가제를 하적한 경우에 EL 성능 데이터의 비교 | |||||
용액 | 첨가제 | 첨가제의 농도 1) | 최대 효율 [Cd/A] | U[V] @ 100Cd/m 2 | t 1/2 [h] @ 10mA/cm 2 |
용액1 | - | - | 8.5 | 3.1 | 980 |
용액1 | 첨가제1 | 0.001% | 8.5 | 3.0 | 980 |
용액1 | 첨가제1 | 0.01% | 8.5 | 3.1 | 980 |
용액1 | 첨가제1 | 0.1% | 8.3 | 3.0 | 250 |
용액4 | - | - | 1.5 | 5.1 | 80 |
용액4 | 첨가제1 | 0.001% | 1.3 | 4.9 | 100 |
용액4 | 첨가제1 | 0.01% | 1.7 | 5.7 | 90 |
용액4 | 첨가제1 | 0.1% | 1.8 | 4.9 | 30 |
용액3 | - | - | 1.5 | 4.7 | 90 |
용액3 | 첨가제2 | 0.001% | 1.5 | 4.5 | 90 |
용액3 | 첨가제2 | 0.01% | 1.6 | 4.6 | 90 |
용액3 | 첨가제2 | 0.1% | 1.4 | 5.4 | 50 |
용액2 | - | - | 9.1 | 3.1 | >1000 |
용액2 | 첨가제3 | 0.001% | 9.4 | 3.1 | >1000 |
용액2 | 첨가제3 | 0.01% | 9.0 | 3.2 | >1000 |
용액2 | 첨가제3 | 0.1% | 8.5 | 3.3 | 500 |
용액2 | - | - | 9.1 | 3.1 | >1000 |
용액2 | 첨가제4 | 0.001% | 9.0 | 3.1 | >1000 |
용액2 | 첨가제4 | 0.01% | 9.1 | 3.1 | >1000 |
용액2 | 첨가제4 | 0.1% | 8.4 | 3.7 | 200 |
용액2 | - | - | 9.1 | 3.1 | >1000 |
용액2 | 첨가제5 | 0.001% | 9.4 | 3.1 | >1000 |
용액2 | 첨가제5 | 0.01% | 9.6 | 3.1 | >1000 |
용액2 | 첨가제5 | 0.1% | 8.4 | 3.2 | 700 |
1)농도 : 용매에 기초한 m/v |
다양한 용액과 첨가제 하적하의 프린팅 성질 비교 | ||||||
용액 | 첨가제 | 첨가제의 농도 | 프린팅 파라미터 | 작은방울의 모양 | 작은 방울의 무게 | 비고 |
용액1 | - | - | 95 V6.4㎲ | 즉시 따라붙는 짧은 꼬리 | 51ng | 양호한 프린트적성 |
용액1 | 첨가제1 | 0.001% | 100 V5.4㎲ | 즉시 따라붙는 짧은 꼬리 | 54ng | 양호한 프린트적성 |
용액1 | 첨가제1 | 0.01% | 97 V5.6㎲ | 즉시 따라붙는 짧은 꼬리 | 52ng | 양호한 프린트적성 |
용액1 | 첨가제1 | 0.1% | 100 V6.0㎲ | 즉시 따라붙는 짧은 꼬리 | 59ng | 양호한 프린트적성 |
Claims (15)
- (i) 헤테로 원자로서, 실리콘, 게르마늄, 불소 또는 이들의 조합을 포함하는 유기화합물, (ii) 계면활성제, (iii) 양친성 특성이 있는 화합물, 또는 (iv) 상기 (ii) 또는 (iii) 중 하나 또는 모두와 상기 (i)의 혼합물로 이루어지는 군으로부터 선택되는, 하나 이상의 첨가제를 포함하는 것을 특징으로 하는 유기 반도체 용액으로서, 상기 하나 이상의 첨가제가 유기 실록산을 포함하는 화합물인 것인 유기 반도체 용액.
- 삭제
- 삭제
- 제 1 항에 있어서, 유기 실록산을 함유하는 첨가제는 하나 이상의 -O-SiR1R2 기를 포함하며, 여기에서 R1, R2 는 동일하거나 또는 상이하며, 각각 H, 선형의, 분지형의 또는 고리형의 C1- C12- 알킬 기이며 여기에서 하나 이상의 서로 근접하지 않은 탄소원자는 또한 O 또는 S로 대체될 수 있으며, 하나 이상의 H 원자는 F, 또는 하나 이상의 치환체 R3로 대체될 수 있는 C2-C14- 방향족 또는 헤테로방향족 물질로 대체 될 수 있고; R3 는 동일하거나 또는 상이하며, 각각 선형의, 분지형의 또는 고리형의 C1- C12- 알킬 또는 알콕시 기이며 여기에서 하나 이상의 서로 근접하지 않은 탄소원자는 또한 O 또는 S로 대체될 수 있으며 하나 이상의 H 원자는 F 또는 Cl로 대체될 수 있는 유기 반도체 용액.
- 제 1 항에 있어서, 유기 실록산을 포함하는 화합물이 분자량이 1000g/mol 미만인 저분자량 화합물인 것을 특징으로 하는 유기 반도체 용액.
- 제 1 항에 있어서, 유기 실록산을 포함하는 화합물이 분자량이 1000g/mol 이상인 중합체인 것을 특징으로 하는 유기 반도체 용액.
- 기판 상에 유기 반도체 레이어를 생산함에 있어서, 제 1 항 및 제 4 항 내지 제 6 항 중 어느 하나의 항에 따른 유기 반도체 용액을 사용하는 방법.
- 제 7 항에 있어서, 상기 방법이 유기 반도체 레이어를 생산하는 프린팅 방법인 것을 특징으로 하는 방법.
- 제 8 항에 있어서, 방법이 유기 반도체 레이어를 생산하는 잉크젯 프린팅 방법인 것을 특징으로 하는 방법.
- 제 1 항 및 제 4 항 내지 제 6 항 중 어느 하나의 항에 따른 유기 반도체 용액을 사용하여 생산되고, 유기 반도체를 포함하는 코팅 레이어.
- 제 7 항의 방법으로 생산되고, 유기 반도체를 포함하는 코팅 레이어.
- 제 10 항에 따른 코팅 레이어를 함유하는 전자소자.
- 제 11 항에 따른 코팅 레이어를 함유하는 전자소자.
- 제 12 항에 있어서, 전자소자가 중합체성의 유기 발광 다이오드, 유기 집적회로 (O-IC), 유기 필드효과 트랜지스터(OFET), 유기 박막 트랜지스터(OTFT), 유기 태양전지 (O-SC) 또는 유기 레이저 다이오드(O laser)인 것을 특징으로 하는, 전자소자.
- 제 13 항에 있어서, 전자소자가 중합체성의 유기 발광 다이오드, 유기 집적회로 (O-IC), 유기 필드효과 트랜지스터(OFET), 유기 박막 트랜지스터(OTFT), 유기 태양전지 (O-SC) 또는 유기 레이저 다이오드(O laser)인 것을 특징으로 하는, 전자소자.
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DE10135640A DE10135640A1 (de) | 2001-07-21 | 2001-07-21 | Lösungen organischer Halbleiter |
DE10135640.4 | 2001-07-21 | ||
PCT/EP2002/007978 WO2003019693A2 (de) | 2001-07-21 | 2002-07-18 | Lösungen organischer halbleiter |
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WO2003019693A2 (de) | 2003-03-06 |
DE10135640A1 (de) | 2003-02-06 |
US20040188672A1 (en) | 2004-09-30 |
DE50212025D1 (de) | 2008-05-15 |
EP1412991A2 (de) | 2004-04-28 |
KR20040043163A (ko) | 2004-05-22 |
WO2003019693A3 (de) | 2003-11-13 |
CN1636281A (zh) | 2005-07-06 |
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JP2005514726A (ja) | 2005-05-19 |
US7244960B2 (en) | 2007-07-17 |
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