KR100909564B1 - 스퍼터링 증착 장치 - Google Patents
스퍼터링 증착 장치 Download PDFInfo
- Publication number
- KR100909564B1 KR100909564B1 KR1020050128579A KR20050128579A KR100909564B1 KR 100909564 B1 KR100909564 B1 KR 100909564B1 KR 1020050128579 A KR1020050128579 A KR 1020050128579A KR 20050128579 A KR20050128579 A KR 20050128579A KR 100909564 B1 KR100909564 B1 KR 100909564B1
- Authority
- KR
- South Korea
- Prior art keywords
- sputtering
- housing
- target
- substrate
- coating layer
- Prior art date
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
실험예 | 비교예 | |||||||
1 | 2 | 3 | 1 | 2 | 3 | 4 | ||
고분자 필름 | PI | PI | PET | PI | PI | PI | PET | |
캐소드 하우징 | Zn/SUS | Sn/SUS | Zn/SUS | - | SUS | Al/SUS | Cu/SUS | |
증 착 시 간 | 30 분후 | 5 | 7 | 5 | 40 | 40 | 20 | 30 |
60 분후 | 6 | 5 | 7 | 80 | 50 | 25 | 40 | |
90 분후 | 9 | 10 | 9 | 120 | 70 | 30 | 60 | |
120 분후 | 9 | 9 | 10 | 1180 | 100 | 50 | 90 |
Claims (7)
- 스퍼터링 증착법으로 기판(14) 위에 금속을 박막 코팅하기 위하여 타겟(16)이 장착된 스퍼터링 캐소드(18)와 비활성 기체 유입구(11)가 형성된 진공 챔버(13)를 구비하는 스퍼터링 증착 장치에 있어서,상기 비활성 기체 유입구(11) 및 상기 스퍼터링 캐소드(18) 주위를 감싸도록 설치되며, 내벽이 아연 또는 주석으로 코팅된 코팅층(24)을 가진 하우징(20)을 구비하는 것을 특징으로 하는 스퍼터링 증착 장치.
- 제1항에 있어서,상기 코팅층은 스프레이, 아크, 스퍼터링, 도금 중 어느 하나의 공정에 의해 형성되는 것을 특징으로 하는 스퍼터링 증착 장치.
- 제2항에 있어서,상기 코팅층은 스프레이 코팅된 것을 특징으로 하는 스퍼터링 증착 장치.
- 제2항 또는 제3항에 있어서,상기 코팅층은 20㎛ 내지 1mm의 두께를 가지는 것을 특징으로 하는 스퍼터링 증착 장치.
- 제1항에 있어서,상기 하우징은 상기 기판과 일정한 간격이 유지되도록 하우징 내부로 절곡된 절곡부를 포함하는 것을 특징으로 하는 스퍼터링 증착 장치.
- 제1항에 있어서,상기 타겟은 Cu, Ni, Cr, Ti, Al, ITO, TiO2, 또는 이들의 합금 중 어느 하나인 것을 특징으로 하는 스퍼터링 증착 장치.
- 제1항에 있어서,상기 기판은 폴리이미드, 폴리에틸렌 테레프탈레이트, 폴리카보네이트, 폴리테트라 플루오르 에틸렌, 폴리페닐렌 설파이드 중 어느 하나인 것을 특징으로 하는 스퍼터링 증착 장치.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050128579A KR100909564B1 (ko) | 2005-12-23 | 2005-12-23 | 스퍼터링 증착 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050128579A KR100909564B1 (ko) | 2005-12-23 | 2005-12-23 | 스퍼터링 증착 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20070067357A KR20070067357A (ko) | 2007-06-28 |
KR100909564B1 true KR100909564B1 (ko) | 2009-07-27 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020050128579A KR100909564B1 (ko) | 2005-12-23 | 2005-12-23 | 스퍼터링 증착 장치 |
Country Status (1)
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KR (1) | KR100909564B1 (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101666350B1 (ko) * | 2015-09-01 | 2016-10-17 | 한국화학연구원 | 탄화불소 박막을 포함하는 열차단 필름 및 이의 제조방법 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990033245A (ko) * | 1997-10-23 | 1999-05-15 | 윤종용 | 반도체 금속증착설비의 쉴드조립체 |
JP2001073115A (ja) * | 1999-09-02 | 2001-03-21 | Ulvac Japan Ltd | カーボンスパッタ装置 |
KR20030033228A (ko) * | 2001-10-19 | 2003-05-01 | (주)블루트론 | p형 아연산화물 박막과 이를 적용한 화합물 반도체 및 그 제조방법 |
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- 2005-12-23 KR KR1020050128579A patent/KR100909564B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990033245A (ko) * | 1997-10-23 | 1999-05-15 | 윤종용 | 반도체 금속증착설비의 쉴드조립체 |
JP2001073115A (ja) * | 1999-09-02 | 2001-03-21 | Ulvac Japan Ltd | カーボンスパッタ装置 |
KR20030033228A (ko) * | 2001-10-19 | 2003-05-01 | (주)블루트론 | p형 아연산화물 박막과 이를 적용한 화합물 반도체 및 그 제조방법 |
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