KR100907473B1 - Method for formation silicide nanodot and laminated structure formed silicide nanodot - Google Patents

Abstract

A method of forming silicide nanodots and a laminated structure in which silicide nanodots are formed are disclosed. In the method for forming silicide nanodots according to the present invention, a laminate structure having at least one interface composed of a metal layer and a silicon layer containing oxygen on a substrate is prepared, and the silicide nanodots are formed on the interface by irradiating an electron beam on the laminate. It is. In addition, the laminate structure in which the silicide nano dot is formed according to the present invention includes a substrate and a metal layer formed on the substrate, and a silicide nano dot including a metal of the same type as the metal layer formed on the metal layer. According to the silicide nano dot forming method according to the present invention, since the size of the silicide nano dot is limited by the oxygen-containing silicon surrounding the silicide nano dot, it is possible to form a nano dot of 10 nm or less having a uniform shape. In addition, by using an electron beam, a patterned nano dot array having a uniform size and density can be easily implemented. In addition, the laminate structure in which the silicide nanopoints are formed according to the present invention has silicide nanodots formed on the metal layer, and thus, an emission tip of a catalyst or field emission display (FED) of nanowires or carbon nanotubes. And it can be used as a hard mask at the time of etching or oxidation.

Description

Method for formation silicide nanodot and laminated structure formed silicide nanodot}

The present invention relates to nanotechnology, and more particularly, to a method of forming nanodots.

Recently, the application of nanodots is taking up a large portion in the recent nano technology. In particular, patterned nano-dot arrays of 10 nm or less are applicable to many fields. Applications include single electron devices, photonic crystals, patterned magnetic storage devices, electrochemical sensors, and biological sensors. It is also used in the manufacture of carbon nanotubes (CNTs), which are widely used in electronic devices, hydrogen storage devices, filters, and the like. Forming carbon nanotubes on the metal nanospots after the formation of the metal nanospots facilitates the decomposition reaction selectively on the metal nanodots, thereby quickly producing carbon nanotubes.

As a result, many studies have been conducted since patterned nano dot arrays of 10 nm or less can be used for various purposes, but methods of forming the patterned nano dots to be smaller than 10 nm while having a uniform size and density are not known.

It was difficult to uniformly control the size and density of nanopoints by the initial nucleation method used to form nanopoints, and the proximity effect using the E-beam method. There is a problem that it is difficult to form a nano-point of less than 10nm by the scattering of electrons. Recently reported, even when forming an array of nano-dots using an electron beam, the size of the nano-dots could not form the nano-dots less than 10nm to about 15nm.

The technical problem to be solved by the present invention is to provide a method of forming a nano point of 10 nm or less to uniform size and density and to provide a laminated structure having a nano point of 10 nm or less of uniform size and density.

In order to solve the above technical problem, the silicide nano-dot forming method according to the present invention comprises the steps of preparing a laminated structure having at least one interface consisting of a silicon layer containing a metal layer and oxygen on the substrate; And irradiating an electron beam on the substrate to form silicide nano dots on the interface.

In order to solve the above technical problem, the laminate structure in which the silicide nanopoints according to the present invention is formed is a substrate; A metal layer formed on the substrate; And silicide nano dots containing a metal of the same kind as the metal layer formed on the metal layer.

In order to solve the above technical problem, the laminate structure in which the silicide nanopoints according to the present invention is formed is a substrate; A silicon layer containing oxygen formed on the substrate; A metal layer formed on the silicon layer; And a silicide nano dot including a metal of the same type as a metal layer formed on an upper surface of the metal layer and an interface between the metal layer and the silicon layer.

According to the silicide nano dot forming method according to the present invention, since the size of the silicide nano dot is limited by the oxygen-containing silicon surrounding the silicide nano dot, it is possible to form a nano dot of 10 nm or less having a uniform shape. In addition, by using an electron beam, a patterned nano dot array having a uniform size and density can be easily implemented. The laminated structure in which the silicide nanopoints are formed according to the present invention has a silicide nanopoint formed on the metal layer, so that a catalyst of a nanowire or a carbon nanotube (CNT) or a field emission display (FED) Emission tip, can be used as a hard mask during etching or oxidation.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the silicide nano dot forming method and the laminate structure in which the silicide nano dot is formed according to the present invention. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various forms, and only the present embodiments are intended to complete the disclosure of the present invention and to those skilled in the art to fully understand the scope of the invention. It is provided to inform you.

1 is a flow chart showing a process of performing a preferred embodiment of the silicide nano-dot forming method according to the present invention, Figure 2 is a cross-sectional view schematically showing this process.

Referring to FIGS. 1 and 2, first, as shown in FIG. 2A, a stacked structure 200 in which a metal layer 220 and an oxygen-containing silicon layer 230 are sequentially formed on a substrate 210 is prepared. (S110). The metal layer 220 may be made of one or more selected from Pd, Ni, Co, Ti, Ta, W, Pt, Cr, V, Zr, Hf, Nb, Fe, Ru, Rh, Re, Os, Ir, and Mo. have. In this embodiment, the substrate 210 is formed by depositing SiO ₂ having a thickness of 1000 mW on a silicon wafer, and the metal layer 220 is formed by sputtering Pd onto the substrate 210 with a thickness of 40 mW. In addition, since Pd and SiO ₂ substrates constituting the metal layer 220 have poor adhesion, Ta (not shown) is deposited to have a thickness of 40 kV between the metal layer 220 and the substrate 210 to improve the adhesion. Ta was also deposited by sputtering. The silicon layer 230 containing oxygen is also deposited by sputtering. In this example, the film was deposited at a thickness of 300 kPa. The oxygen content of the silicon layer 230 containing oxygen may be set in the range of 1 to 60 at%. If the oxygen content is less than 1 at%, when the electron beam is irradiated to form the silicide nano dot, the silicide nano dot is not formed but a continuous silicide layer is formed. And when the oxygen content is greater than 60at%, silicide is not formed well.

The laminated structure 200 is shown in FIG. 3 by measuring an AES depth profile. As shown in FIG. 3, a Ta layer is formed on the SiO ₂ substrate to improve adhesion. A metal layer 220 made of Pd is formed on the Ta layer, and a silicon layer 230 containing oxygen is formed on the metal layer. The oxygen content in the silicon layer 230 is about 13 at%.

Next, as shown in FIG. 2 (b), the silicide nano dot 240 is formed by irradiating an electron beam (E-beam) on the stacked structure 200 shown in FIG. 2 (a) (S120). In this embodiment, the electron beam has a radius of 50 nm. In this case, the electron beam may be irradiated to the entire region of the laminated structure 200 to form the nano dots 240 in the entire region of the laminated structure 200, or the electron beam may be irradiated only to the region to form the nano dots 240. have. A schematic diagram of a process of forming the silicide nano dot 240 by irradiating an electron beam to the stacked structure 200 illustrated in FIG. 2A is schematically illustrated in FIG. 4. 5 (a) shows an X-ray photoelectron spectra (XPS) of the laminated structure 200 shown in FIG. 2 (a), and FIG. 5 (b) shows silicide nano dots by irradiating an electron beam according to the present invention. XPS of the laminated structure 200 in which 240 is formed is shown.

4 (a) shows a state before irradiation of the electron beam. At this time, the XPS analysis of the bonding state of the silicon of the silicon layer 230 was performed, and the Si 2p spectrum is shown in FIG. As shown in FIG. 5 (a), the Si 2p spectrum is represented by a graph having four Gaussian distributions. These Gaussian distributions correspond to four silicon states. The four silicon states correspond to Si ^{4 +} (103.2 eV), Si ^{3 +} (101.8 eV), Si ⁺ (100.3 eV) and Si (99.3 eV). That is, the graph represented by reference number 510 of FIG. 5 (a) corresponds to Si, the graph represented by reference number 520 corresponds to Si ⁺ , and the graph represented by reference number 530 corresponds to Si ^{3 +} . The graph represented by 540 corresponds to Si ^{4 +} .

As shown in FIG. 5A, the Si peak is largest and the size of the remaining peaks is relatively small. Based on this, the silicon present in the silicon layer 230 is locally oxidized in combination with the oxygen 250, but the silicon is present in a state in which the silicon is not oxidized as a whole. Oxygen is then contained in the silicon layer 230 as an impurity.

Then, when the electron beam is irradiated, the silicide 240 is formed through an interfacial reaction at the interface between the silicon layer 230 and the metal layer 220 as shown in FIG. 4 (b). When the silicide 240 is formed, oxygen 250 contained in the silicon layer 230 is accumulated at the interface between the silicide 240 and the silicon layer 230. That is, a silicon layer 270 containing a large amount of oxygen 250 is formed in an outer portion of the silicide 240, and a silicon layer 280 having a low oxygen content is formed in an outer portion of the silicide 240. The silicide 240 grows to some extent by the silicon layer 270 containing much oxygen 250, and then stops growing. As such, when the silicide stops growing, as shown in FIG. 4 (c), the silicide is not connected to the other silicide and remains in an island form. The size of the silicide 240 formed in an island shape may vary depending on the amount of oxygen contained in the silicon layer 230 or the intensity and exposure time of the electron beam, but may be adjusted to 10 nm or less. When the silicon layer 230 is etched, the silicide nano dot 240 is exposed on the surface. When etching the silicon layer 230, the etching rate is different according to the oxygen content, so that the silicon layer 270 containing much oxygen is not etched as shown in FIG. It remains in the form surrounding the silicide nano dot 240.

In order to determine the bonding state of silicon after the irradiation of the electron beam, the results of XPS analysis in the same manner as in FIG. 5 (a) are shown in FIG. 5 (b). FIG. 5 (b) shows the result of XPS analysis of the laminated structure after etching the silicon layer 230 after the irradiation of the electron beam. That is, the graph represented by reference numeral 560 in FIG. 5 (b) corresponds to Si ⁺ . a is, the graph represented by reference numeral 570 is equivalent to Si ^{+ 3,} represented by reference numeral 580 is a graph which corresponds to the Si ^{+ 4.} And graph who corresponds to the Si peak disappears and Pd ₂ Si is appeared graph 550 corresponding to the peak (99.8eV), relative to the Si ^{4 +} peak was larger. That is, the electron beam is irradiated to indicate that the silicide 240 is formed on the silicon layer 230 and the metal layer 220 through an interfacial reaction.

FIG. 6 is a cross sectional transmission electron microscopy (TEM) photograph of a laminated structure in which silicide nanodots formed according to the present invention are formed. FIG. 7 is a view of a silicide forming portion (inside a square) of FIG. 6. High resolution TEM (HRTEM) photographs.

As shown in FIG. 6, the silicide 240 generated when the electron beam is irradiated is formed between the Pd layer constituting the metal layer 220 and the silicon layer 230, and hemispherical on the Pd layer constituting the metal layer 220. Is formed. In addition, the formed silicide was measured by a high quality electron microscope, and the d-spacing of the silicide nanodots 240 was 2.37 Å, which corresponds to 2.35 인 which is the (111) lattice spacing of Pd ₂ Si. The d-spaced 2.25kV and 1.95kV at the bottom of the silicide nano dot 240 correspond to the (111) lattice spacing and the (200) lattice spacing of Pd, respectively. That is, it can be seen that the formed silicide is Pd ₂ Si and is formed of crystalline rather than amorphous.

After forming the silicide nano dots 240 as described above, as illustrated in FIG. 2C, the silicon layer 230 containing oxygen is etched (S130). Plasma is used to etch the silicon layer 230 containing oxygen. As the gas used for the plasma, a gas containing chlorine (Cl) or fluorine (F) is preferably used. As a gas containing chlorine, Cl ₂ gas, HCl gas, or the like may be used.

As shown in FIG. 5 (b) even after etching the silicon layer 230, the Si ^{4 +} peak appears to be relatively large, even when the silicon layer 230 is etched, the silicide ( The silicon layer 270 containing much oxygen surrounding the 240 is not etched, indicating that it remains. That is, the silicon layer 270 containing much oxygen around the silicide nano dot 240 is formed of silicon oxide such as SiO _x and remains unetched during silicon etching to surround the silicide nano dot.

Meanwhile, a laminate structure in which silicide nano dots 240 are formed between the metal layer 220 and the silicon layer 230 may be used without etching the silicon layer 230. However, the silicon layer 230 must be etched to apply the nanowire or carbon nanotube catalyst, an emission tip of a field emission display (FED), a hard mask during etching or oxidation, and the like. Becomes wider. In addition, since the appropriate silicon layer will be different depending on the intended use, when it is necessary to cover the silicide nano-dots 240 with the silicon layer, it is preferable to deposit the silicon layer later.

8 is a scanning electron microscopy (SEM) micrograph of the laminated structure in which the silicide nanopoints formed according to the present invention are formed, and FIG. 9 is a nanostructure in the laminated structure in which the silicide nanodots formed according to the present invention are formed. It is a figure which shows the size and distribution of a point.

FIG. 8 is a SEM photograph when the electron beam is irradiated to the entire region of the laminated structure 200 shown in FIG. 2A. As shown in FIG. 8, the size of the silicide nano dots 240 is uniformly formed on the metal layer 220 to a size of 10 nm or less. And it can be seen that the silicide nano dot 240 is uniformly distributed over the entire region, and the gap between the silicide nano dot 240 and the silicide nano dot 240 is formed narrow. More specifically, the average size of the silicide nano dots 240 is 8 nm, and the silicide nano dots 240 exist (1.94 ± 0.01) × 10 ¹¹ per cm ² .

FIG. 9 illustrates the average number and standard deviations of the silicide nanodots 240 inside the grid while changing the grid size on the SEM photograph shown in FIG. 8. When the grid size is doubled, the measurement area is increased by four times. When the average number of silicide nano dots 240 existing in the corresponding grid increases by four times, the distribution of the silicide nano dots 240 is uniform. have. As the lamination structure in which the silicide nanodots formed according to the present invention are formed, as the grid size increases, the average number of silicide nanodots 240 increases in a parabolic form. That is, as the grid size is increased by 2 times, the average number of the silicide nano dots 240 is also increased by 4 times, and thus the distribution of the silicide nano dots 240 is uniformly formed. In addition, the silicide nano-dots 240 were uniformly distributed even when viewed locally so that the standard deviation had a value smaller than 1 when the grid size was smaller than 50 nm.

In this embodiment, the oxygen content of the silicon layer 230 is 13 at%. By adjusting the oxygen content, however, the size of the silicide nano dot 240 can be adjusted. Reducing the oxygen content reduces the effect of controlling the growth of silicide through oxygen, so that larger silicide nanopoints 240 are formed, and increasing the oxygen content results in smaller silicide nanodots 240. In addition, the size and density of the silicide nano dot 240 may be controlled by adjusting the intensity of the electron beam, the exposure time, and the diameter of the electron beam.

The method of forming silicide nanodots without patterning so far has been shown and described. However, patterning and forming nanodots only on the patterned portion is more preferable for applications such as catalysts of nanowires or carbon nanotubes. Therefore, hereinafter, a method of forming the patterned nano dots will be described.

FIG. 10 is a flowchart illustrating another preferred embodiment of the patterned silicide nano dot forming method according to the present invention, and FIG. 11 is a flowchart illustrating another preferred embodiment of the patterned silicide nano dot forming method according to the present invention. It is sectional drawing which shows schematically.

Referring to FIGS. 10 and 11, first, as shown in FIG. 11A, a stacked structure 1100 in which a metal layer 1120 and a silicon layer 1130 containing oxygen are sequentially formed on a substrate 1110 is prepared. (S1010). This step is the same as the step S110 described above.

Next, as shown in FIG. 11B, a hydrogen silsesquioxane (HSQ) 1140, which is a kind of resist, is coated on the silicon layer 1130 containing oxygen (S1020). HSQ 1140 is formed by applying about 200 Pa by spin coating using MIBK (methyl isobutyl ketone) as a solvent, and heating at 90 ° C. for 1 minute to evaporate and dry MIBK solvent. HSQ 1140 is applied for patterning through an electron beam lithography process.

Next, as shown in FIG. 11C, the electron beam is irradiated only to the portion to which the HSQ 1140 is applied to form the silicide nano dot 1150 (S1030). When the electron beam is irradiated as described above, the silicide nano dot 1150 is formed at the interface between the silicon layer 1130 and the metal layer 1120 of the portion irradiated with the electron beam. When the electron beam is irradiated to the entire area of the laminated structure 1100, the electron beam has a diameter of 50 nm, but for patterning and exposure, a diameter of 2 nm is used. This is for more accurate patterning.

Next, as illustrated in FIG. 11D, the HSQ is developed to remove the HSQ of the portion to which the electron beam is not irradiated (S1040). HSQ development is performed at 21 ° C. for 60 seconds using a 25% aqueous solution of tetramethylammonium hydroxide (TMAH). After the development, rinse with water.

Next, as shown in FIG. 11E, the HSQ 1140 that is not removed in step S1040 and the HSQ 1140 of the silicon layer 1130 are removed in step S1040 to etch and remove the exposed portions. (S1050). The etching of the HSQ 1140 and the silicon layer 1130 uses plasma. As a gas for generating a plasma, it is preferable to use a gas containing chlorine (Cl) or fluorine (F). In this example, a chlorine (Cl ₂ ) gas plasma was used, and etching was performed for 1 minute. At this time, the process pressure was 10mTorr, and the power was applied as 50W as RF power.

As shown in FIG. 11 (f), the silicon layer 1130 of the silicon layer 1130 and the metal layer 1120 that are not removed in step S1050 are removed to etch and remove a portion where the surface is exposed (S1060). The etching of the silicon layer 1130 and the metal layer 1120 uses an argon plasma. The etching was performed for 2 minutes by applying 100 W of RF power at 100 mTorr.

The stack structure in which the silicide nanodots according to the present invention are formed through the above-described method is shown in FIGS. 12 and 13 through plan-view scanning electron microscopy. FIG. 12 illustrates that the metal layer 1120 is patterned to have a linear shape, so that the silicide nano dots 1150 are formed on the metal layer 1120, and FIG. 13 is patterned in a circle.

Referring to FIG. 12, FIG. 12A illustrates a patterning of the metal layer 1120 at 50 nm, FIG. 12B is a pattern of 30 nm, and FIG. 12C is 20 nm. As shown in FIG. 12C, when the metal layer 1120 is patterned to 20 nm, it can be seen that the silicide nano dots 1150 having a size of 10 nm or less are patterned in a line. And when the patterning at 50nm it can be seen that the nano-dots 1150 can be patterned in three columns as shown in Figure 12 (a), the patterning at 30nm can be seen that the nano-dots 1150 can be patterned in two columns as shown in Figure 12 (b). Can be. In all three cases, the size of the silicide nano dot 1150 is uniform and the gap between adjacent silicide nano dots 1150 is also narrow and uniform. The patterned silicide nanodots can perform an excellent role as a catalyst for fabricating nanowires or carbon nanotubes.

Referring to FIG. 13, FIG. 13A illustrates a patterning of a diameter of the metal layer 1120 at 100 nm, FIG. 13B is a pattern of 60 nm, and FIG. 13C is 25 nm. In particular, when the metal layer 1120 is patterned to have a diameter of 25 nm, it is possible to pattern the nano layer 1150 to have one nanopoint 1150. When patterning in this way, it is possible to form to have a nano point 1150 of a desired size in a desired position.

As described above, if the metal layer 1120 is formed to have the silicide nanopoint 1150, the catalyst for fabricating the nanowire or carbon nanotube, the emission tip in the electroluminescent device, the etching or diffusion It is easier to use as a hard mask, current injection tip, etc.

The method of forming silicide nanodots by irradiating an electron beam to a laminate having a structure in which a metal layer and an oxygen-containing silicon layer are sequentially stacked on the substrate is described and described, but is not limited thereto. The silicide nano-dots are formed by irradiating an electron beam when the interface composed of the metal layer and the silicon layer containing oxygen exists. Therefore, as shown in FIG. 14A, the first silicon layer 1430 containing oxygen, the metal layer 1420, and the second silicon layer 1431 containing oxygen are sequentially stacked on the substrate 1410. The laminated structure 1400 may be used. When the stacked structure 1400 is used, the stacked structure having the silicide nano dot 1450 having a shape as shown in FIG. 14B may be formed. In this case, when the oxygen content of the first silicon layer 1430 and the second silicon layer 1431 is controlled, the size and density of the silicide nano dots 1450 formed above and below the metal layer 1420 may be adjusted.

Another embodiment is shown in FIG. 15. Referring to FIG. 15A, the stacked structure 1500 used in the present invention may include a first metal layer 1520, an oxygen-containing first silicon layer 1530, a buffer layer 1540, and the like on a substrate 1510. The second metal layer 1521 and the second silicon layer 1531 containing oxygen may be sequentially stacked. The buffer layer 1540 is to prevent silicide from being formed between the second metal layer 1521 and the first silicon layer 1530. After applying the HSQ to the laminated structure 1500 having such a structure and irradiated with an electron beam, the first silicide nano dot 1551 and the second on the interface between the first metal layer 1520 and the first silicon layer 1530 The second silicide nano dot 1550 may be formed on the interface between the metal layer 1521 and the second silicon layer 1531. After etching to the second metal layer 1521 through the above-described HSQ development and etching process, HSQ is applied again, and then irradiated with an electron beam, the first metal layer 1520 and the first silicon layer 1530 are formed on the interface. Trisilicide nano dots 1552 may be formed. And again through the HSQ development and etching process it can be produced a laminated structure in which the silicide nano-dots having a structure as shown in Figure 15 (b) is formed.

Although the preferred embodiments of the present invention have been shown and described above, the present invention is not limited to the specific preferred embodiments described above, and the present invention belongs to the present invention without departing from the gist of the present invention as claimed in the claims. Various modifications can be made by those skilled in the art, and such changes are within the scope of the claims.

1 is a flow chart showing the implementation of a preferred embodiment of the silicide nano dot forming method according to the present invention.

2 is a cross-sectional view schematically showing a process of performing a preferred embodiment of the silicide nano dot forming method according to the present invention.

3 is a diagram showing an AES (Auger) depth profile of the laminated structure used in the method for forming silicide nanodots according to the present invention.

Figure 4 is a schematic diagram showing a process of limiting the size of the formed silicide in the silicide nano dot forming method according to the present invention.

Figure 5 (a) is a view showing the X-ray photoelectron spectra (XPS) of the laminated structure used in the silicide nano dot forming method according to the present invention, Figure 5 (b) is a silicide nano dot formed according to the present invention is formed It is a figure which shows the XPS of the laminated structure which exists.

6 is a cross sectional transmission electron microscopy (TEM) photograph of a laminated structure having silicide nanodots formed according to the present invention.

FIG. 7 is a high resolution TEM (HRTEM) image of the silicide forming portion (inside the square) of FIG. 6.

8 is a scanning electron microscopy (SEM) photograph of the laminate structure having the silicide nanodots formed according to the present invention.

9 is a view showing the uniformity of the size and distribution of the nano-dots in the laminated structure formed with the silicide nano-dots formed according to the present invention.

10 is a flow chart showing the implementation of another preferred embodiment of the method for forming patterned silicide nanodots according to the present invention.

11 is a cross-sectional view schematically illustrating a process of performing a preferred embodiment of the method for forming patterned silicide nanodots according to the present invention.

12 are planar SEM photographs of a laminate structure having silicide nanodots formed according to the present invention, and are patterned in a linear form.

FIG. 13 is planar SEM photographs of a laminate structure having silicide nano dots formed according to the present invention, and is patterned in a circular shape.

14 is a cross-sectional view schematically illustrating a process of performing another embodiment of the method for forming patterned silicide nanodots according to the present invention.

15 is a cross-sectional view schematically illustrating a process of performing another embodiment of the method for forming patterned silicide nanodots according to the present invention.

Claims (22)

Preparing a laminated structure having at least one interface composed of a metal layer and a silicon layer containing oxygen on a substrate; And And forming silicide nanodots (nanodots) on the interface by irradiating the laminated structure with an electron beam (E-beam). The method of claim 1, The laminated structure is a silicide nano dot forming method, characterized in that the silicon layer containing a metal layer and oxygen is formed on the substrate in turn. The method of claim 2, Forming the silicide nano dots, The method of forming a silicide nano dot, characterized in that for irradiating the electron beam only to the portion to form a silicide nano dot. The method of claim 2, And after the forming of the silicide nanodots, removing the silicon-containing silicon layer. The method of claim 4, wherein Removing the oxygen-containing silicon layer is a silicide nano dot forming method, characterized in that using a gas plasma containing chlorine (Cl) or fluorine (F). The method of claim 2, Forming the silicide nano dots, Forming a resist on the silicon layer; Irradiating an electron beam only on a portion of the resist to form nanodots; Developing the resist to remove resist in portions not irradiated with the electron beam; And And etching the silicon layer of the portion of the exposed portion of the resist due to the removal of the resist in the developing of the resist and the portion of the portion irradiated with the electron beam. The method of claim 6, And etching the resist and the silicon layer using a gas plasma containing chlorine or fluorine. The method of claim 6, The resist is silicide nano dot forming method characterized in that the hydrogen silsesquioxane (HSQ). The method of claim 6, After etching the resist and the silicon layer, further comprising etching the unetched silicon layer and the exposed metal layer in the etching of the resist and the silicon layer. Way. The method of claim 9, And etching the silicon layer and the metal layer using argon (Ar) plasma. The method according to any one of claims 1 to 10, The content of oxygen contained in the silicon layer is silicide nano dot formation method, characterized in that set in the range of 1 to 60 atomic%. Board; A metal layer formed on the substrate; And And a silicide nano dot formed of the same type of metal as the metal layer formed on the metal layer. Board; A silicon layer containing oxygen formed on the substrate; A metal layer formed on the silicon layer; And And a silicide nano dot containing a metal of the same type as the metal layer formed on the upper surface of the metal layer and the interface between the metal layer and the silicon layer. delete The method of claim 13, And a silicide nano dot formed at an interface between the metal layer and the silicon layer is formed inside the silicon layer at a lower surface of the metal layer. The method according to claim 12 or 13, The silicide nano dot is a laminated structure having a silicide nano dot is formed, characterized in that surrounded by SiO _x . The method according to claim 12 or 13, The silicide nano dot is a laminated structure having a silicide nano dot is formed, characterized in that formed in a hemispherical shape. The method according to claim 12 or 13, The metal layer is made of at least one selected from Pd, Ni, Co, Ti, Ta, W, Pt, Cr, V, Zr, Hf, Nb, Fe, Ru, Rh, Re, Os, Ir and Mo. The laminated structure in which the silicide nano dot is formed. The method of claim 12, The silicide nano dot is a laminated structure in which the silicide nano dot is formed, wherein the silicide nano dot is formed only in a partial region on the metal layer. The method of claim 19, Laminated structure in which the silicide nano-dots are formed, wherein the partial region is linear. The method of claim 19, Laminated structure in which the silicide nano-dots are formed, wherein the partial region is circular. The method according to claim 12 or 13, Laminated structure formed with the silicide nano-dots, characterized in that the metal layer is patterned.

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