KR100882906B1 - Sputtering Apparatus - Google Patents

Abstract

The present invention relates to a sputtering apparatus, comprising: a chamber; A lower pedestal which is positioned below the chamber and fixes the substrate on which the thin film is formed; A voltage variable mask positioned on the lower pedestal and corresponding to the non-deposition region of the substrate; A mask supporting the voltage varying mask and positioned at an edge on the substrate; A variable power supply for applying a variable voltage to the voltage variable mask; And an upper pedestal for fixing a target including a deposition material formed on the substrate and positioned above the voltage variable mask.

The sputtering apparatus may include one or more voltage varying masks whose voltages are varied by a variable power supply, thereby forming a more efficient and uniform thin film on the substrate.

Variable Voltage Mask, Variable Power Supply

Description

Sputtering Apparatus

1 is a simplified cross-sectional view of a sputtering apparatus according to the prior art.

2 is a simplified cross-sectional view of the sputtering apparatus according to the first embodiment of the present invention.

3 is a simplified cross-sectional view of the sputtering apparatus according to Embodiment 2 of the present invention.

 <Description of the symbols for the main parts of the drawings>

100: positive electrode plate 110: lower pedestal

120: substrate 200: mask

211: first voltage variable mask 212: second voltage variable mask

220: first insulator 230: second insulator

240: third insulator 250: fourth insulator

300: target 310: upper pedestal

320: negative electrode plate 330: magnet

 BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering apparatus, and more particularly, to a sputtering apparatus capable of forming a more efficient and uniform thin film having a voltage variable mask whose voltage is controlled by a variable power supply.

Among the flat panel display devices, the organic light emitting display device, which is a self-luminous type, does not need a backlight required for the light-receiving liquid crystal display device and thus can be lighter and thinner. In addition, the process can be simplified, and the wide viewing angle and fast response speed enable high quality video.

The organic light emitting display device is formed by depositing a semiconductor layer, an insulating layer, an electrode layer, and a light emitting layer in the form of a thin film. There are two methods for forming the thin film, chemical vapor deposition (CVD) and physical vapor deposition (PVD).

The physical vapor deposition method (PVD) is a method of forming a thin film by depositing on a substrate by applying energy to a source source consisting of a material formed on a substrate to physically separate the material of the source source.

In the physical vapor deposition method (PVD), there is a sputtering apparatus for forming a thin film on a substrate by separating a target made of a thin film material formed on the substrate with ions accelerated by plasma.

 The sputtering process using the sputtering device has an advantage of forming a thin film while keeping the substrate at a low temperature as compared with a chemical vapor phase device which proceeds at a high temperature.

In addition, since a thin film can be formed in a short time with a relatively simple structure, it is widely used not only in an organic light emitting display device but also in a flat panel display device and a semiconductor field.

1 is a simplified cross-sectional view of a sputtering apparatus according to the prior art.

Referring to FIG. 1, a conventional sputtering apparatus includes a target portion A, a mask portion B, and a substrate portion C in a chamber.

First, the target portion A located above the chamber 60 supplies a material to be formed on the negative electrode plate 32 and the substrate 12 connected to the high frequency power source 50 located outside the chamber 60. Comprising a target 30 and an upper pedestal 31 for supporting the target 30, the magnet 33 is positioned on the negative electrode plate (32).

Next, the mask part B includes the mask 20, the floating mask 21, and the insulators 22 and 23 to prevent deposition of the target deposition material on the non-deposited portion of the substrate 12.

Next, the substrate part C may include a substrate 12 on which a target 30 material separated by a sputtering process is formed, a lower pedestal 11 supporting the substrate 12, and a lower pedestal 11. It is made of a positive electrode plate 10 is provided at the bottom and grounded.

Such a conventional sputtering apparatus includes a floating mask 21 to prevent the plasma 40 from being strengthened toward the mask 20 in a grounded state, thereby forming a uniform plasma 40 state. However, the floating mask 21 alone has a limit in forming a uniform plasma 40.

In addition, in the plasma 40 state, a heating effect is generated in which heat is generated while electrons constantly exit to the ground through the mask 20 or the chamber 60.

Since the efficiency of the plasma 40 is improved by preventing the lost electrons, the magnet 33 is provided to reduce the lost electrons. When the magnet 33 is used, the electrons are subjected to the force of the electric field and the magnetic field at the same time, so that the electrons are vortexed to be restricted to a certain region.

However, even with such a magnet 33, the majority of the electrons to the ground through the mask 20 or the chamber 60 is limited to prevent the heating effect.

Accordingly, an object of the present invention is to solve the above problems of the prior art, and to prevent heating effects and to form an efficient and uniform plasma to form a uniform thin film on a substrate.

The object of the present invention is a chamber;

A lower pedestal which is positioned below the chamber and fixes the substrate on which the thin film is formed;

A voltage variable mask positioned on the lower pedestal and corresponding to the non-deposition region of the substrate;

A mask supporting the voltage varying mask and positioned at an edge on the substrate;

A variable power supply for applying a variable voltage to the voltage variable mask; And

And an upper pedestal for fixing a target including a deposition material formed on the substrate and positioned above the voltage varying mask.

In addition, the object is a chamber;

A lower pedestal which is positioned below the chamber and fixes the substrate on which the thin film is formed;

A first voltage variable mask positioned on the lower pedestal and corresponding to the non-deposition region of the substrate;

A second voltage variable mask positioned on the first voltage variable mask and corresponding to the chamber;

A mask supporting the first voltage variable mask and the second voltage variable mask and positioned at an edge of the substrate;

A first variable power supply for applying a variable voltage to the first variable voltage mask;

A second variable power source for applying a variable voltage to the second variable voltage mask; And

It is also achieved by a sputtering device, characterized in that it comprises an upper pedestal for fixing a target located on the second voltage variable mask and including a deposit formed on the substrate.

Details of the above objects and technical configurations and the effects thereof according to the present invention will be more clearly understood by the following detailed description with reference to the drawings showing preferred embodiments of the present invention.

<Example 1>

2 is a simplified cross-sectional view of the sputtering apparatus according to the first embodiment of the present invention.

Referring to FIG. 2, the sputtering apparatus according to the present invention includes a target portion A, a mask portion B, and a substrate portion C in a chamber.

The chamber 600 maintains a vacuum state in order to smoothly proceed the sputtering process, and the high frequency power source 500 is positioned in the power supply unit outside the chamber 600.

The high frequency power supply 500 is connected to the negative electrode plate 320 in the chamber 600 to apply a high frequency voltage, thereby generating the plasma 400 between the substrate 120 and the target 300.

Next, the target portion A includes a negative electrode plate 320, an upper pedestal 310, and a target 300, and a magnet 330 is positioned on the negative electrode plate 320.

First, the target 300 collides with cations in the chamber 600 generated by the acceleration of electrons, thereby causing a sputtering phenomenon in which the material on the surface of the target is released. The material on the surface of the separated target 300 is formed on the substrate 120 to form a thin film (not shown). The thin film may implement an organic light emitting display device.

Subsequently, the upper pedestal 310 fixes the target 300 which is a source of deposition material formed on the substrate 120 by sputtering.

Subsequently, the negative electrode plate 320 is positioned above the upper pedestal 310 and is connected to the high frequency power supply 500 to apply a high frequency voltage to the target 300.

Subsequently, the magnet 330 applies a magnetic field to prevent electrons generated from the plasma 400 from escaping to another part of the sputtering device.

Next, the mask part B includes a mask 200, a voltage variable mask 210, and insulators 220 and 230.

First, the mask 200 is formed in the shape of a square border on the edge on the substrate 120 using a metal material having a good adhesion of the target material, such as aluminum (Al).

The mask 200 prevents the material of the target surface from being deposited on the non-deposited portion of the substrate 120, and embosses the surface of the mask 200 to increase adhesion with the material of the target surface. Form.

Subsequently, the voltage variable mask 210 is also made of the same metal material as aluminum (Al), which is the same as the mask 200, and is positioned inside the edge of the mask 200. The voltage variable mask 210 is coupled to the insulators 220 and 230 to be insulated from the substrate 120 and the mask 200.

Subsequently, the insulators 220 and 230 are formed of an insulating material, and the first insulator 220 electrically insulating the voltage variable mask 210 and the substrate 120 and the mask 200 and the voltage variable mask ( The second insulator 230 electrically insulates 210 from each other.

Accordingly, the voltage variable mask 210 prevents the plasma 400 from being enhanced by the potential difference between the mask 200 in the ground state and the target 300, thereby preventing the target 300 and the substrate 120. It serves to improve the uniformity of the plasma 400 formed between.

In this case, when the voltage of the variable power supply 700 is adjusted by connecting the voltage variable mask 210 with the variable power source 700, the potential difference between the voltage variable mask 210 and the target 300 may be adjusted. The uniformity of the plasma 400 may be controlled. Therefore, the uniformity of the thin film (not shown) formed on the substrate 120 can be further improved.

Preferably, the variable power supply 700 is adjusted within a voltage difference of 0 to -100V, which is a potential difference that can be formed by charging electrons in the voltage variable mask 210 by the plasma 400, and thus the voltage variable mask 210. Voltage can be applied to the

Next, the substrate part C includes a substrate 120 on which a material of the surface of the target 300 separated by a sputtering process is formed, a lower pedestal 110 supporting the substrate 120, and the lower pedestal 110. It is made of a positive electrode plate 100 which is located at the bottom of the ground.

<Example 2>

3 is a simplified cross-sectional view of the sputtering apparatus according to Embodiment 2 of the present invention.

The second embodiment has the same configuration as the first embodiment except for the mask part B and the variable power sources connected to the mask part B, and thus description thereof will be omitted.

Referring to FIG. 3, the sputtering apparatus according to the present invention includes a target portion A, a mask portion B, and a substrate portion C. As shown in FIG.

The mask part B includes a mask 200, voltage varying masks 211 and 212, and insulators 220, 230, 240, and 250.

First, the mask 200 is formed in the shape of a square border on the edge on the substrate 120 using a metal material having a good adhesion of the target material, such as aluminum (Al).

The mask 200 is formed to be as large and rough as possible by embossing the mask surface to prevent deposition of the target material on the non-deposited portion of the substrate 120 and to increase adhesion with the target material.

Subsequently, the voltage variable masks 211 and 212 are also formed of a metal material such as aluminum (Al), which is the same as the mask 200, and include the first voltage variable mask 211 and the second voltage variable mask 212. do. In this case, the first voltage variable mask 211 and the second voltage variable mask 212 are positioned inside the edge of the mask 200 and are combined with the insulators 220, 230, 240, 250 to form the substrate 120. ) And the mask 200 and the chamber 600.

Subsequently, the insulators 220, 230, 240, and 250 are made of an insulating material, and the first insulator 220 and the first voltage variable electrically insulate the substrate 120 from the first voltage variable mask 211. A second insulator 230 is formed to insulate the mask 211 from the mask 200. The third insulator 240 may insulate the second variable voltage mask 212 and the mask 200, and the fourth insulator 250 may insulate the second voltage variable mask 212 from the chamber 600.

Accordingly, the first voltage variable mask 211 prevents the plasma 400 from being enhanced by the potential difference between the mask 200 in the ground state and the target 300, thereby preventing the phenomenon of the target 300 and the substrate ( It serves to improve the uniformity of the plasma 400 formed between the 120.

In addition, the second voltage variable mask 212 is electrically insulated from the mask 200 and the chamber 600, so that electrons are discharged to the ground through the mask 200 or the chamber 600 in the plasma 400. By reducing the outgoing it is possible to improve the efficiency of the plasma 400.

In this case, when the voltage applied by connecting the first variable power source 710 to the first variable voltage mask 211 is adjusted, the potential difference between the first variable voltage mask 211 and the target 300 can be adjusted. Therefore, the uniformity of the plasma 400 can be controlled.

In addition, when the voltage applied by connecting the second variable power supply 720 to the second variable voltage mask 212 is adjusted, the potential difference between the second variable voltage mask 212 and the target 300 may be adjusted, thereby reducing the plasma. The uniformity of 400 may be controlled.

 Therefore, the uniformity of the thin film (not shown) formed on the substrate 120 can be further improved.

Preferably, the first variable power source 710 and the second variable power source 720 are formed by charging electrons in the first voltage variable mask 211 and the second voltage variable mask 212 by the plasma 400. The voltage may be applied to the first voltage variable mask 211 and the second voltage variable mask 212 by adjusting within a potential difference of 0 to -100V.

In Example 2 described above, the sputtering apparatus including the first and second variable voltage masks and the first and second variable power sources has been described, but more voltage adjustment masks and variable voltages are provided to enable finer voltage adjustment. This may further improve the uniformity and efficiency of the thin film.

Although Example 1 and Example 2 of the present invention have been described and described, the scope of the present invention is not limited to Examples 1 and 2, and a person skilled in the art to which the present invention pertains claims Easily modified or substituted through the scope also belongs to the scope of the present invention.

Therefore, the sputtering apparatus of the present invention can form a more efficient and uniform thin film by having one or more voltage variable masks whose voltage is varied by the variable power source.

Claims (6)

delete delete delete chamber; A lower pedestal which is positioned below the chamber and fixes the substrate on which the thin film is formed; A first voltage variable mask positioned on the lower pedestal and corresponding to the non-deposition region of the substrate; A second voltage variable mask positioned on the first voltage variable mask and corresponding to the chamber; A mask supporting the first voltage variable mask and the second voltage variable mask and positioned at an edge of the substrate; A first variable power supply for applying a variable voltage to the first variable voltage mask; A second variable power source for applying a variable voltage to the second variable voltage mask; And And an upper pedestal for fixing a target including a deposition material formed on the substrate and positioned above the second voltage variable mask. The method of claim 4, wherein And the second voltage variable mask is electrically insulated from the mask and the chamber by an insulator. The method of claim 4, wherein The second variable power supply is a sputtering apparatus, characterized in that for applying a negative voltage to the second voltage variable mask.

Images